Display device

Abstract

A display device includes a substrate including a main display area, a component area, and a peripheral area; a plurality of main pixel electrodes in the main display area of the substrate; a plurality of auxiliary pixel electrodes in the component area of the substrate; an auxiliary common electrode over the auxiliary pixel electrodes, overlapping the auxiliary pixel electrodes, and including a plurality of openings between the auxiliary pixel electrodes; and a shield layer under the auxiliary pixel electrodes and including a plurality of opening portions respectively overlapping the plurality of openings of the auxiliary common electrode.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0128271, filed on October 5, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more aspects of an embodiment relate to a display device. Background Technology

[0004] A display device includes a display element and electronic components configured to control electrical signals applied to the display element. The electronic components typically include transistors (e.g., thin-film transistors), storage capacitors, and multiple wirings.

[0005] Recently, the applications of display devices have become more diversified. Furthermore, as display devices have become thinner and lighter, their range of applications has gradually expanded. With the increasing diversification of display device applications, various methods have been explored regarding the design of display device shapes.

[0006] The information disclosed in this background section is only intended to enhance the understanding of the background art, and therefore, the information discussed in this background section does not necessarily constitute prior art. Summary of the Invention

[0007] One or more aspects of the embodiments relate to a display device, and, for example, to a display device that can display images in component areas and is easily manufactured.

[0008] In display devices based on related technologies, it may be difficult to manufacture a display device that can display images in the component area.

[0009] Aspects of one or more embodiments include a display device that can display images in a component area and is relatively easy to manufacture. However, such technical problems are exemplary, and embodiments according to this disclosure are not limited thereto.

[0010] Additional aspects will be set forth in part in the description which follows, and will be partly obvious from the description, or may be learned by practicing the embodiments proposed in this disclosure.

[0011] According to one or more embodiments, a display device includes: a substrate including a main display area, a component area, and a peripheral area; a main pixel electrode in the main display area of ​​the substrate; an auxiliary pixel electrode in the component area of ​​the substrate; an auxiliary opposing electrode on top of the auxiliary pixel electrode, overlapping the auxiliary pixel electrode, and including an opening between the auxiliary pixel electrodes; and a shielding layer below the auxiliary pixel electrode and including an opening portion overlapping the opening of the auxiliary opposing electrode.

[0012] According to some embodiments, the display device may further include a main relative electrode, which is on top of and overlaps with the main pixel electrode.

[0013] According to some embodiments, the main relative electrode can be connected to the auxiliary relative electrode.

[0014] According to some embodiments, the auxiliary opposite electrode may include an overlapping portion and a connector, the overlapping portion overlapping with the auxiliary pixel electrode, and the connector connecting the overlapping portion.

[0015] According to some embodiments, the connector may have a curved shape when viewed from a direction perpendicular to the top surface of the substrate.

[0016] According to some embodiments, the melting point of the shielding layer material can be higher than the melting point of the auxiliary opposite electrode material.

[0017] According to some embodiments, the area of ​​the shielding layer can be equal to or greater than the area of ​​the auxiliary opposite electrode.

[0018] According to some embodiments, when viewed from a direction perpendicular to the top surface of the substrate, each of the opening portions can be arranged inside the edge of the corresponding opening within the opening.

[0019] According to some embodiments, the display device may further include: a main thin-film transistor electrically connected to a main pixel electrode in the main display region of the substrate, and including a main semiconductor layer and a main gate electrode, wherein the shielding layer and the main gate electrode are on the same layer.

[0020] According to some embodiments, the shielding layer and the main gate electrode comprise the same material.

[0021] According to some embodiments, the display device may further include: a main thin-film transistor electrically connected to a main pixel electrode in the main display region of the substrate, and including a main semiconductor layer and a main gate electrode; and wiring between the main gate electrode and the main pixel electrode, wherein the shielding layer may be disposed on the same layer as the wiring.

[0022] According to some embodiments, the shielding layer and wiring are on the same layer.

[0023] According to some embodiments, the display device may further include: a main thin-film transistor, electrically connected to a main pixel electrode in the main display region of the substrate, and including a main semiconductor layer and a main gate electrode; and a bottom metal layer, below the main semiconductor layer, wherein the shielding layer and the bottom metal layer may be on the same layer.

[0024] According to some embodiments, the shielding layer and the bottom metal layer comprise the same material.

[0025] According to some embodiments, the display device may further include: a main thin-film transistor in the main display region of the substrate, electrically connected to a main pixel electrode, and including a main semiconductor layer and a main gate electrode; an auxiliary thin-film transistor in the peripheral region of the substrate and including an auxiliary semiconductor layer and an auxiliary gate electrode; and connection wiring to electrically connect the auxiliary thin-film transistor to the auxiliary pixel electrode.

[0026] According to some embodiments, the auxiliary opposite electrode may include an overlapping portion and a connector, the overlapping portion overlapping with the auxiliary pixel electrode, and the connector connecting the overlapping portion, and the connector may overlap with the connection wiring.

[0027] According to some embodiments, the shielding layer may include a main shielding portion and a connecting shielding portion, the main shielding portion overlapping the auxiliary pixel electrode, and the connecting shielding portion connecting to the main shielding portion, and when viewed from a direction perpendicular to the top surface of the substrate, connection wiring is arranged in the connecting shielding portion in the component region.

[0028] According to some embodiments, the display device may further include: a main thin-film transistor, electrically connected to a main pixel electrode in the main display region of the substrate, and including a main semiconductor layer and a main gate electrode; and an auxiliary thin-film transistor, electrically connected to an auxiliary pixel electrode in the component region of the substrate, and including an auxiliary semiconductor layer and an auxiliary gate electrode, wherein a shielding layer may be located below the auxiliary semiconductor layer.

[0029] According to some embodiments, the shielding layer may overlap with the auxiliary semiconductor layer and the auxiliary gate electrode.

[0030] According to some embodiments, the display device may further include: auxiliary wiring in the component region of the substrate and connected to an auxiliary semiconductor layer, wherein a shielding layer may overlap with the auxiliary wiring.

[0031] According to some embodiments, the display device may further include: a component, located below the substrate, corresponding to a component area.

[0032] These and / or other aspects will become more apparent and readily understood from the following detailed description of the embodiments, drawings, and claims. Attached Figure Description

[0033] The above and other aspects, features, and characteristics of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0034] Figures 1A to 1C This is a perspective view of a display device according to some embodiments;

[0035] Figure 2 This is a cross-sectional view of a portion of a display device according to some embodiments;

[0036] Figure 3 It can be included in some embodiments. Figure 1A A plan view of the display panel in the display device;

[0037] Figure 4 It can be included in some embodiments. Figures 1A to 1C The equivalent circuit diagram of the pixel circuit in a display device;

[0038] Figure 5 This is a cross-sectional view of a portion of a display device according to some embodiments;

[0039] Figure 6 This is a plan view of a portion of a display device according to some embodiments;

[0040] Figure 7 This is a plan view of a portion of a display device according to some embodiments;

[0041] Figure 8 This is a plan view of a portion of a display device according to some embodiments;

[0042] Figure 9 This is a plan view of a portion of a display device according to some embodiments;

[0043] Figure 10 It can be included in some embodiments. Figure 1A A plan view of the display panel in the display device;

[0044] Figure 11A and Figure 11B This is a plan view of a portion of a display device according to some embodiments;

[0045] Figure 12 According to some embodiments Figure 11B A partial cross-sectional view; and

[0046] Figure 13 This is a cross-sectional view of a portion of a display device according to some embodiments. Detailed Implementation

[0047] Reference will now be made in more detail to aspects of some embodiments illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, aspects of some embodiments are described below with reference only to the accompanying drawings to explain aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0048] Because various modifications and numerous embodiments are permitted according to the embodiments of this disclosure, certain embodiments will be shown in the accompanying drawings and described in the written description. The effects and features of this disclosure, as well as methods for implementing them, will be elucidated with reference to the embodiments described below in more detail with reference to the accompanying drawings. However, the embodiments according to this disclosure are not limited to the following embodiments and can be implemented in various forms.

[0049] In the following description, aspects of some embodiments will be described with reference to the accompanying drawings, wherein the same reference numerals refer to the same elements throughout, and repeated descriptions thereof are omitted.

[0050] It will be further understood that when a layer, area, or component is referred to as being "on" another layer, area, or component, the layer, area, or component may be directly or indirectly on the other layer, area, or component. That is, for example, an intermediary layer, area, or component may exist. For ease of explanation, the dimensions of the elements in the figures may be enlarged or reduced. For example, since the dimensions and thicknesses of the elements in the figures are arbitrarily shown for ease of explanation, this disclosure is not limited thereto.

[0051] In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other.

[0052] Figures 1A to 1C This is a perspective view of display devices 1, 1' and 1" according to some embodiments.

[0053] like Figure 1AAs shown, the display device 1 includes a display area DA and a peripheral area NDA outside the display area DA. The display area DA includes a component area CA and a main display area MDA that at least partially surrounds the component area CA. The component area CA displays an auxiliary image (or multiple auxiliary images), and the main display area MDA displays a main image (or multiple main images), and therefore, the component area CA and the main display area MDA can display images individually or in combination with each other. That is, according to some embodiments, the component area CA can be configured to display an image that is different from or separate from the image displayed in the main display area MDA. The component area CA and the main display area MDA can also be configured to jointly display the same image, wherein the component area CA displays a first portion of the image, and the main display area MDA displays a second portion of the image, and the first and second portions of the image together form the whole of the image.

[0054] The peripheral region NDA can be a non-display area (e.g., a bezel area) in which no display elements are disposed. The display area DA can be completely surrounded by the peripheral region NDA. When the display device 1 includes the main display area MDA, the component area CA, and the peripheral region NDA, it is understood that the substrate of the display device 1 includes the main display area MDA, the component area CA, and the peripheral region NDA.

[0055] exist Figure 1A The diagram illustrates a main display area MDA arranged around at least a portion of a component area CA. That is, one edge of the component area CA may coincide with one edge of the main display area MDA. According to some embodiments, the display device 1 may include two or more component areas CA. The shapes and sizes of the multiple component areas CA may differ from each other. In views that are generally perpendicular to the top surface or main display surface of the display device 1 (e.g., in a plan view, or in views that are perpendicular or orthogonal to the display surface), the component areas CA may have various shapes, such as circular, elliptical, or polygonal (e.g., star-shaped or rhomboid).

[0056] exist Figure 1A The diagram shows a view in a direction generally perpendicular to the top surface of the display device 1, with the component region CA arranged at the top (+y direction) center of the main display area MDA, which has a generally quadrilateral shape. However, embodiments according to this disclosure are not limited to this, and the component region CA may be arranged on one side of the quadrilateral main display area MDA, for example, on the upper right or upper left side of the main display area MDA. As an example, such as Figure 1B As shown, a circular component area CA can be arranged inside the main display area MDA. Figure 1C As shown, a quadrilateral strip component area CA can be arranged on one side of the main display area MDA.

[0057] Display device 1 may include multiple main sub-pixels Pm and multiple auxiliary sub-pixels Pa, with the multiple main sub-pixels Pm arranged in the main display area MDA and the multiple auxiliary sub-pixels Pa arranged in the component area CA.

[0058] Display device 1 may include component 40 (see...) Figure 2 ), Component 40 (see Figure 2 ) is arranged on display panel 10 (see Figure 2 Below this is the electronic component corresponding to component area CA. Component 40 can be an electronic component configured to transmit or receive signals (e.g., from an external device). Such signals can include, for example, light or sound, or other wireless spectrum. As examples, the electronic component can be a sensor that measures distance, such as a proximity sensor, a sensor that identifies a part of a user's body, such as a fingerprint, iris, or face, a small light that outputs light, or an image sensor, such as a camera, that captures images.

[0059] Electronic components using light can utilize light of various wavelengths, such as visible light, infrared light, or ultraviolet light. Electronic components using light can also utilize ultrasound or sound of different frequencies. According to some embodiments, component 40 (see...) Figure 2 It may include sub-components such as optical transmitters and optical receivers. The optical transmitters and receivers may have an integrated structure, or a pair of optical transmitters and receivers with physically separate structures may constitute a component 40 (see...). Figure 2 To prevent component 40 (see...) Figure 2 The functionality of the component is reduced, and the component region CA may include the transmission region TA, from component 40 (see Figure 2 Output to the outside or from the outside toward component 40 (see) Figure 2 The traveling light and / or sound can pass through the transmission zone TA.

[0060] In a display device according to some embodiments, the transmittance can be 10% or greater when light is allowed to pass through the component region CA. According to some embodiments, the transmittance can be 40% or greater, 50% or greater, 85% or greater, or 90% or greater.

[0061] Multiple auxiliary subpixels Pa can be arranged in the component area CA. These auxiliary subpixels Pa can display a preset image by emitting light. The image displayed in the component area CA is an auxiliary image. The auxiliary image can have a resolution lower than that of the image displayed in the main display area MDA. That is, the component area CA includes a transmission area TA through which light and sound can pass. If no subpixels are arranged in the transmission area TA, the number of auxiliary subpixels Pa per unit area in the component area CA can be less than the number of main subpixels Pm per unit area in the main display area MDA.

[0062] In the following description, as an example, an organic light-emitting display device is used as a display device 1 according to some embodiments. However, the display device 1 according to some embodiments is not limited thereto. That is, the display device 1 according to some embodiments can be a display device such as an inorganic light-emitting display or a quantum dot light-emitting display. As an example, the emitting layer of the display element of the display device 1 may include organic materials or inorganic materials. Furthermore, the display device 1 may include quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0063] Figure 2 This is a cross-sectional view of a portion of a display device 1 according to some embodiments. For example... Figure 2 As shown, the display device 1 may include a display panel 10 and a component 40 overlapping the display panel 10. The display device 1 may also include a cover window disposed on the display panel 10 to protect the display panel 10.

[0064] Display panel 10 includes a component area CA and a main display area MDA. The component area CA overlaps with component 40, and the main image is displayed in the main display area MDA. Display panel 10 may include a substrate 100, a display layer DISL on the substrate 100, a touch screen layer TSL, an optical functional layer OFL, and a panel protection member PB disposed below the substrate 100. A buffer layer 111 may be disposed between the substrate 100 and the display layer DISL.

[0065] The display layer DISL may include a circuit layer PCL, a display element layer EDL, and an encapsulation component ENCM. The circuit layer PCL may include a main thin-film transistor (TFTm) and an auxiliary thin-film transistor (TFTa). The display element layer EDL may include a main light-emitting element (EDm) and an auxiliary light-emitting element (EDa) serving as display elements. The encapsulation component ENCM may include a thin-film encapsulation layer 300 and an encapsulation substrate. An insulating layer IL may be disposed inside the display layer DISL.

[0066] The substrate 100 may include insulating materials such as glass, quartz, and polymer resins. The substrate 100 may be a rigid substrate or a flexible substrate that is bendable, foldable, or rollable.

[0067] The main light-emitting element EDm and the main pixel circuit PCm connected to the main light-emitting element EDm can be arranged in the main display area MDA of the display panel 10. The main pixel circuit PCm may include at least one main thin-film transistor TFTm and can control the operation of the main light-emitting element EDm. The main sub-pixel Pm may include the main light-emitting element EDm.

[0068] An auxiliary light-emitting element EDa and an auxiliary pixel circuit PCa connected to the auxiliary light-emitting element EDa can be arranged in the component area CA of the display panel 10. The auxiliary pixel circuit PCa may include at least one auxiliary thin-film transistor TFTa and can control the operation of the auxiliary light-emitting element EDa. An auxiliary sub-pixel Pa may include the auxiliary light-emitting element EDa.

[0069] The area of ​​component region CA containing auxiliary light-emitting elements EDA can be defined as the auxiliary display area ADA. The area of ​​component region CA without auxiliary light-emitting elements EDA can be defined as the transmissive area TA.

[0070] The transmission area TA can be the area through which light and / or signals emitted from the component 40 arranged in the component area CA, or light and / or signals incident on the component 40, pass. The auxiliary display area ADA and the transmission area TA can be arranged alternately in the component area CA.

[0071] like Figure 2 As shown, the display element layer EDL can be covered by the thin-film encapsulation layer 300. As an example, such as... Figure 2 As shown, the thin-film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 2 The image shows a thin-film encapsulation layer 300 comprising a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 disposed between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0072] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include materials derived from silicon oxide (SiO2) and silicon nitride (SiN). x ), silicon oxynitride (SiO) x N y Aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO) xThe organic encapsulation layer 320 may be at least one inorganic insulating material selected from ZnO and / or ZnO2, and can be formed by chemical vapor deposition (CVD). The organic encapsulation layer 320 may include a polymer-based material. The polymer-based material may include acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resins, polyimide, and polyethylene. The first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 may each be formed into a single entity to cover the main display area MDA and the component area CA.

[0073] However, embodiments according to this disclosure are not limited thereto, and the display panel 10 may include an encapsulation substrate disposed on the display element layer EDL. In this case, the encapsulation substrate may face the substrate 100, and the display element layer EDL is between the encapsulation substrate and the substrate 100. A gap may exist between the encapsulation substrate and the display element layer EDL. The encapsulation substrate may include glass. A sealant may be disposed between the substrate 100 and the encapsulation substrate, and the sealant may include glass frit. The sealant may be disposed in the peripheral region NDA (see Figures 1A to 1C In the outer area NDA (see...). Figures 1A to 1C The sealant in the DA (see) prevents moisture from entering the area surrounding the display area. Figures 1A to 1C At the same time, through the display area DA (see...) Figures 1A to 1C The side surface of the ) penetrates into the display area DA (see Figures 1A to 1C )middle.

[0074] The Touch Screen Layer (TSL) can obtain coordinate information corresponding to external inputs (e.g., touch events). The TSL may include touch electrodes and touch wiring connected to the touch electrodes. The TSL can sense external inputs using self-capacitance or mutual capacitance methods.

[0075] The touch screen layer (TSL) can be disposed on the thin-film encapsulation layer 300. Alternatively, the touch screen layer (TSL) can be formed separately on the touch substrate and then bonded to the thin-film encapsulation layer 300 by an adhesive layer such as an optically clear adhesive (OCA). As an example, the touch screen layer (TSL) can be formed directly on the thin-film encapsulation layer 300. In this case, no adhesive layer may be disposed between the touch screen layer (TSL) and the thin-film encapsulation layer 300.

[0076] The optical functional layer OFL may include an anti-reflective layer. The OFL can reduce the reflectivity of light (external light) incident from the outside toward the display device 1. As an example, the OFL may be a polarizing film. The OFL may have an opening OFL_OP corresponding to the transmission region TA. Therefore, the transmittance of the transmission region TA can be significantly improved. The opening OFL_OP may be filled with a transparent material such as optically transparent resin (OCR). Alternatively, the OFL may include a filter plate comprising a black matrix and a color filter.

[0077] A panel protection member PB can be attached to the bottom of the substrate 100 to support and protect the substrate 100. The panel protection member PB may have an opening PB_OP corresponding to the component region CA. The panel protection member PB can improve the light transmittance of the component region CA by including the opening PB_OP. The panel protection member PB may comprise polyethylene terephthalate or polyimide.

[0078] The area of ​​component region CA can be larger than the area where component 40 is arranged. Therefore, the area of ​​the opening PB_OP of the panel protection member PB can be different from the area of ​​component region CA. Although in Figure 2 The diagram shows that component 40 is separated from display panel 10 on one side ((-)z direction), but at least a portion of component 40 can be inserted into the opening PB_OP of panel protection member PB.

[0079] Furthermore, multiple components 40 can be arranged in the component area CA. In this case, the components 40 can have different functions. As an example, the component 40 may include at least two of a camera (imaging element), a solar cell, a flash, a proximity sensor, an illuminance sensor, and an iris sensor.

[0080] Figure 3 It can be included in some embodiments. Figure 1A A plan view of the display panel 10 in the display device 1. According to some embodiments, Figure 3 It can be understood as including in Figure 1A A plan view of the display panel 10 in the display device 1. (Reference) Figure 3 Various components constituting the display panel 10 can be arranged on the substrate 100.

[0081] Multiple primary sub-pixels Pm are arranged in the main display area MDA. Each of the primary sub-pixels Pm can be made of an organic light-emitting diode (OLED) or similar material. Figure 4The display element is implemented using a main pixel circuit (PCm) that drives the main sub-pixel Pm. The main pixel circuit (PCm) can be arranged within the main display area (MDA). The main pixel circuit (PCm) can overlap with the main sub-pixel Pm. Each main sub-pixel Pm can emit, for example, red, green, blue, or white light. The main display area (MDA) can be encapsulated using an ENCM (see [link to encapsulation component]). Figure 2 It can be covered and protected from external air or moisture.

[0082] The component region CA can be arranged on one side of the main display region MDA as described above, or it can be arranged inside the display region DA and surrounded by the main display region MDA. Multiple auxiliary sub-pixels Pa are arranged within the component region CA. Each of the auxiliary sub-pixels Pa can be made of, for example, an organic light-emitting diode (OLED) (see...). Figure 4 The display element is implemented using an auxiliary pixel circuit PCa that drives the auxiliary sub-pixel Pa. The auxiliary pixel circuit PCa can be arranged in the component region CA. The auxiliary pixel circuit PCa can overlap with the auxiliary sub-pixel Pa. Each auxiliary sub-pixel Pa can emit, for example, red, green, blue, or white light. The component region CA can be encapsulated by a component ENCM (see [link to component ENCM]). Figure 2 It can be covered and protected from the effects of outside air, moisture or other pollutants.

[0083] As described above, the component region CA may include a transmissive region TA. The transmissive region TA may surround multiple auxiliary sub-pixels Pa. Alternatively, the transmissive region TA may be a lattice configuration cooperating with the multiple auxiliary sub-pixels Pa. The component region CA includes the transmissive region TA, and therefore, the resolution of the component region CA may be less than the resolution of the main display region MDA. As an example, the resolution of the component region CA may be approximately 1 / 2, 3 / 8, 1 / 3, 1 / 4, 2 / 9, 1 / 8, 1 / 9, or 1 / 16 of the resolution of the main display region MDA. As an example, the resolution of the main display region MDA may be 400 ppi or higher, and the resolution of the component region CA may be approximately 200 ppi or approximately 100 ppi.

[0084] The main pixel circuit PCm and the auxiliary pixel circuit PCa, which drive the main sub-pixel Pm and the auxiliary sub-pixel Pa respectively, can be electrically connected to external circuits arranged in the peripheral area NDA. The first scan drive circuit SDR1, the second scan drive circuit SDR2, the terminal part PAD, the drive voltage supply line 11, and the common voltage supply line 13 can be arranged in the peripheral area NDA.

[0085] The first scan drive circuit SDR1 and the second scan drive circuit SDR2 can be symmetrical to each other around the main display area MDA. The first scan drive circuit SDR1 and the second scan drive circuit SDR2 can apply scan signals to the main pixel circuit PCm via the scan line SL, and the main pixel circuit PCm drives the main sub-pixel Pm. Furthermore, the first scan drive circuit SDR1 and the second scan drive circuit SDR2 can apply emission control signals to each pixel circuit via the emission control line EL. Some of the main pixel circuits PCm of the main sub-pixel Pm in the main display area MDA can be electrically connected to the first scan drive circuit SDR1, and the remaining parts can be electrically connected to the second scan drive circuit SDR2.

[0086] The terminal portion PAD can be disposed on one side of the substrate 100. The terminal portion PAD is exposed by not being covered by an insulating layer, and therefore is electrically connected to the display circuit board 30. The display driver 32 can be disposed on the display circuit board 30.

[0087] The display driver 32 can generate control signals that will be transmitted to the first scan drive circuit SDR1 and the second scan drive circuit SDR2. The display driver 32 can generate data signals, and the generated data signals can be transmitted to the main pixel circuit PCm through the fan-out wiring FW and the data line DL connected to the fan-out wiring FW.

[0088] The display driver 32 can drive voltage ELVDD (see...). Figure 4 ) is supplied to drive voltage supply line 11 and can also supply the common voltage ELVSS (see Figure 4 The power supply is provided to the common voltage supply line 13. Drive voltage ELVDD (see...) Figure 4 The pixel circuits of the main sub-pixel Pm and the auxiliary sub-pixel Pa can be supplied via the drive voltage line PL connected to the drive voltage supply line 11. The common voltage ELVSS (see...) Figure 4 It can be applied to the common voltage supply line 13 and can also be applied to the opposite electrode of the display element.

[0089] The driving voltage supply line 11 may extend in the x-direction below the main display area MDA. The common voltage supply line 13 may have a ring shape with an open side to partially surround the main display area MDA.

[0090] although Figure 3The illustration shows a single component area CA, but the display panel 10 may include multiple component areas CA. In this case, the multiple component areas CA can be separated from each other. A first camera may be arranged corresponding to one component area CA, and a second camera may be arranged corresponding to another component area CA. Alternatively, a camera may be arranged corresponding to one component area CA, and an infrared sensor may be arranged corresponding to another component area CA. The shapes and sizes of the multiple component areas CA can differ from each other.

[0091] Figure 4 It can be included in some embodiments. Figures 1A to 1C The equivalent circuit diagram of the pixel circuits in display devices 1, 1' and 1" is shown. Figure 4 As shown, the auxiliary sub-pixel Pa includes an auxiliary pixel circuit PCa and an organic light-emitting diode (OLED) connected to the auxiliary pixel circuit PCa as a display element. The main sub-pixel Pm may include a main pixel circuit PCm and an organic light-emitting diode (OLED) connected to the main pixel circuit PCm as a display element. The main pixel circuit PCm is connected to... Figure 4 The auxiliary pixel circuit PCa shown is the same as / similar to the one shown.

[0092] like Figure 4 As shown, the auxiliary pixel circuit PCa includes a driving thin-film transistor T1, a switching thin-film transistor T2, and a storage capacitor Cst. The switching thin-film transistor T2 is connected to the auxiliary scan line SLa and the auxiliary data line DLa, and transmits a data signal Dm to the driving thin-film transistor T1 based on the scan signal Sn input through the auxiliary scan line SLa. The data signal Dm is input through the auxiliary data line DLa. The storage capacitor Cst is connected to the switching thin-film transistor T2 and the auxiliary driving voltage line PLA, and stores a voltage corresponding to the difference between the voltage transmitted from the switching thin-film transistor T2 and the driving voltage ELVDD supplied to the auxiliary driving voltage line PLA.

[0093] The driving thin-film transistor T1 can be connected to the auxiliary driving voltage line PLA and the storage capacitor Cst, and the driving current flowing from the auxiliary driving voltage line PLA through the organic light-emitting diode (OLED) can be controlled according to the voltage stored in the storage capacitor Cst. The OLED can emit light with a preset brightness according to the driving current.

[0094] although Figure 4The description describes an auxiliary pixel circuit PCa comprising two thin-film transistors T1 and T2 and a storage capacitor Cst; however, embodiments according to this disclosure are not limited thereto. According to some embodiments, the auxiliary pixel circuit PCa may include seven thin-film transistors and a storage capacitor. According to some embodiments, the auxiliary pixel circuit PCa may include two or more storage capacitors.

[0095] Furthermore, according to some embodiments, without departing from the spirit and scope of embodiments of this disclosure, the auxiliary subpixel Pa may include additional or fewer components.

[0096] Figure 5 This is a cross-sectional view of a portion of a display device 1 according to some embodiments.

[0097] Substrate 100 may include various materials as described above and may have the following characteristics: Figure 5 The multilayer structure shown is illustrated. According to some embodiments, the substrate 100 may include a first substrate layer 101, a first inorganic layer 102, a second substrate layer 103, and a second inorganic layer 104, which are stacked sequentially.

[0098] The first substrate layer 101 and the second substrate layer 103 may each comprise a polymer resin. The polymer resin may include polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, or cellulose acetate propionate. The polymer resin may be transparent.

[0099] The first inorganic layer 102 and the second inorganic layer 104 may each be a barrier layer to prevent the penetration of external foreign matter. The first inorganic layer 102 and the second inorganic layer 104 may each comprise a single layer or multiple layers, wherein the single layer or multiple layers comprise inorganic materials such as silicon nitride, silicon oxynitride and / or silicon oxide.

[0100] The buffer layer 111 can reduce or block the penetration of foreign matter, moisture, or outside air from under the substrate 100 and can planarize the top surface of the substrate 100. The buffer layer 111 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and / or silicon oxide, and may have a single-layer structure or a multi-layer structure including the above materials.

[0101] The main pixel circuit PCm and the auxiliary pixel circuit PCa, each comprising a thin-film transistor (TFT) (e.g., main TFTm / auxiliary TFTa) and a storage capacitor Cst, can be arranged on the buffer layer 111. The main pixel circuit PCm can be arranged in the main display area MDA, and the auxiliary pixel circuit PCa can be arranged in the component area CA. The main pixel circuit PCm in the main display area MDA and the auxiliary pixel circuit PCa in the component area CA can each have the same structure.

[0102] In the component region CA, a bottom metal layer BML can be disposed between the auxiliary pixel circuit PCa and the substrate 100. The bottom metal layer BML can prevent the component 40 (see component 40) from being exposed to the substrate 100. Figure 2 Launch or travel to component 40 (see) Figure 2 The light is diffracted through the narrow gap between the wiring connected to the auxiliary pixel circuit PCa, which may improve the performance of the auxiliary thin-film transistor TFTa. The bottom metal layer BML is absent in the transmission region TA. As an example, the bottom metal layer BML may have an opening portion BMLA corresponding to the transmission region TA. That is, the opening portion BMLA of the bottom metal layer BML may define the transmission region TA of the component region CA.

[0103] The bottom metal layer BML can be electrically connected to the connection line CL. The connection line CL can be electrically connected to a line connected to the auxiliary pixel circuit PCa, the storage capacitor Cst of the auxiliary pixel circuit PCa, or the auxiliary thin-film transistor TFTa. As an example, the bottom metal layer BML can be electrically connected to the auxiliary gate electrode, source electrode, or drain electrode of the auxiliary thin-film transistor TFTa of the auxiliary pixel circuit PCa, or it can be electrically connected to the drive voltage line PL (see...). Figure 3 (or one of the capacitor plates of the storage capacitor Cst)

[0104] like Figure 5 As shown, according to some embodiments, the bottom metal layer BML can also be disposed in the main display area MDA to improve the performance of the main thin-film transistor TFTm of the main pixel circuit PCm. In this case, the bottom metal layer BML is disposed below the main semiconductor layer A1 of the main thin-film transistor TFTm. Furthermore, the bottom metal layer BML positioned below the main semiconductor layer A1 of the main thin-film transistor TFTm and the bottom metal layer BML serving as a shielding layer positioned below the auxiliary semiconductor layer of the auxiliary thin-film transistor TFTa can comprise the same material and can have the same layered structure.

[0105] The main thin-film transistor (TFT) of the main pixel circuit PCm arranged in the main display area MDA may include a main semiconductor layer A1, a main gate electrode G1, a source electrode S1, and a drain electrode D1. The main gate electrode G1 overlaps with the channel region of the main semiconductor layer A1, and the source electrode S1 and drain electrode D1 are respectively connected to the source region and drain region of the main semiconductor layer A1. A gate insulating layer 112 may be arranged between the main semiconductor layer A1 and the main gate electrode G1. A first interlayer insulating layer 113 and a second interlayer insulating layer 115 may be arranged between the main gate electrode G1 and the source electrode S1 or between the main gate electrode G1 and the drain electrode D1.

[0106] The storage capacitor Cst may overlap with the thin-film transistor (TFT). The storage capacitor Cst may include a first capacitor plate CE1 and a second capacitor plate CE2 that overlap each other. According to some embodiments, the main gate electrode G1 of the thin-film transistor TFT and the first capacitor plate CE1 of the storage capacitor Cst may be a single unit. A first interlayer insulating layer 113 may be disposed between the first capacitor plate CE1 and the second capacitor plate CE2.

[0107] The main semiconductor layer A1 may include polycrystalline silicon. According to some embodiments, the main semiconductor layer A1 may include amorphous silicon. According to some embodiments, the main semiconductor layer A1 may include an oxide of at least one of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The main semiconductor layer A1 may include a channel region, a source region, and a drain region, wherein the source and drain regions are doped with impurities.

[0108] The gate insulating layer 112 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide, and may have a single-layer structure or a multi-layer structure including the above materials.

[0109] The main gate electrode G1 or the first capacitor plate CE1 may comprise a low-resistance conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu), and / or titanium (Ti), and may have a single-layer or multi-layer structure comprising the above materials. As an example, the main gate electrode G1 may have a three-layer structure of Mo layer / Al layer / Mo layer.

[0110] The first interlayer insulation layer 113 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide, and may have a single-layer structure or a multi-layer structure including the above materials.

[0111] The second capacitor plate CE2 may include any suitable conductive material and may have a single-layer or multi-layer structure including the following conductive materials, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu).

[0112] The second interlayer insulation layer 115 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide, and may have a single-layer or multi-layer structure including the above materials.

[0113] The source electrode S1 or drain electrode D1 may comprise any suitable conductive material and may have a single-layer or multi-layer structure comprising, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu). As an example, the source electrode S1 or drain electrode D1 may each have a three-layer structure of Ti layer / Al layer / Ti layer.

[0114] The main pixel circuit PCm can be electrically connected to the main pixel electrode 221m arranged in the main display area MDA. The main pixel circuit PCm includes a main thin-film transistor TFTm and a storage capacitor Cst. As an example, ... Figure 5 As shown, the main pixel circuit PCm can be electrically connected to the main pixel electrode 221m via the contact metal CM, which serves as a connection wiring.

[0115] The contact metal CM can be disposed on the first planarization layer 117 and can be connected to the main pixel circuit PCm through contact holes formed in the first planarization layer 117. The contact metal CM can include any suitable conductive material and can have a single-layer structure or a multi-layer structure including the following conductive materials, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu).

[0116] The first planarization layer 117 may include an organic insulating material. The first planarization layer 117 may include an organic insulating material such as benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO). The organic insulating material of the first planarization layer 117 may be a photosensitive organic insulating material.

[0117] A second planarization layer 118 is disposed on the contact metal CM. The second planarization layer 118 may include an organic insulating material. The second planarization layer 118 may include an organic insulating material such as benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO). The organic insulating material of the second planarization layer 118 may be a photosensitive organic insulating material.

[0118] The main pixel electrode 221m can be disposed on the second planarization layer 118. The main pixel electrode 221m can be connected to the contact metal CM through the contact holes of the second planarization layer 118.

[0119] The main pixel electrode 221m may include a reflective layer comprising any suitable conductive material having reflective properties, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. The main pixel electrode 221m may include the reflective layer and a transparent conductive layer disposed above and / or below the reflective layer, the reflective layer comprising any suitable conductive material having a reflective material such as the conductive material described above. The transparent conductive layer may include any suitable transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). According to some embodiments, the main pixel electrode 221m may have a three-layer structure of sequentially stacked ITO layers / Ag layers / ITO layers.

[0120] So far, although the main pixel circuit PCm and main pixel electrode 221m arranged in the main display area MDA have been described, this description also applies to the auxiliary pixel circuit PCa and auxiliary pixel electrode 221a arranged in the component area CA. That is, the auxiliary thin-film transistor TFTa of the auxiliary pixel circuit PCa located in the component area CA can have the same or similar structure as the main thin-film transistor TFTm of the main pixel circuit PCm. The auxiliary pixel electrode 221a and main pixel electrode 221m located in the component area CA can have the same or similar structure. Figure 5 The diagram shows an auxiliary pixel electrode 221a electrically connected to an auxiliary thin-film transistor TFTa via a contact metal CM', which serves as a connection wiring. The auxiliary thin-film transistor TFTa includes an auxiliary semiconductor layer and an auxiliary gate electrode. The description of the contact metal CM applies to the contact metal CM'.

[0121] A pixel defining layer 119 may be disposed on the main pixel electrode 221m and the auxiliary pixel electrode 221a. The pixel defining layer 119 may cover the edges of the main pixel electrode 221m and the auxiliary pixel electrode 221a and may include an opening 119OP overlapping the central portion of the main pixel electrode 221m and the auxiliary pixel electrode 221a. The pixel defining layer 119 may comprise an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), or phenolic resin.

[0122] The first functional layer 222a and the second functional layer 222c are arranged on the pixel defining layer 119, the main pixel electrode 221m, and the auxiliary pixel electrode 221a. The first functional layer 222a and the second functional layer 222c can each be provided as a main body to cover the entire main display area MDA and the entire component area CA.

[0123] The first functional layer 222a may comprise a single layer or multiple layers. As an example, when the first functional layer 222a comprises a polymer material, it may comprise a hole transport layer (HTL) having a single-layer structure, and may comprise poly(3,4-ethylenedioxythiophene) (PEDOT) or polyaniline (PANI). When the first functional layer 222a comprises a low molecular weight material, it may comprise a hole injection layer (HIL) and a hole transport layer (HTL).

[0124] According to some embodiments, the second functional layer 222c may be omitted. As an example, when the first functional layer 222a comprises a polymer material, the second functional layer 222c may be disposed on the first functional layer 222a. The second functional layer 222c may comprise a single layer or multiple layers. The second functional layer 222c may comprise an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0125] A main emitting layer 222mb or an auxiliary emitting layer 222ab is disposed on the first functional layer 222a or between the first functional layer 222a and the second functional layer 222c. The main emitting layer 222mb may be patterned to correspond to the shape of the main pixel electrode 221m. The auxiliary emitting layer 222ab may be patterned to correspond to the shape of the auxiliary pixel electrode 221a. The main emitting layer 222mb and the auxiliary emitting layer 222ab may each comprise an organic material. The main emitting layer 222mb and the auxiliary emitting layer 222ab may each comprise a polymeric organic material or a low molecular weight organic material that emits light of a predetermined color.

[0126] An auxiliary relative electrode 223a is disposed on the auxiliary emitter layer 222ab, overlapping with the auxiliary pixel electrode 221a. A main relative electrode 223m is disposed on the main emitter layer 222mb, overlapping with the main pixel electrode 221m. The auxiliary relative electrode 223a and the main relative electrode 223m can be provided as a single unit (e.g., provided as a continuous material). The auxiliary relative electrode 223a and the main relative electrode 223m can each comprise a conductive material having a relatively low work function. As an example, the auxiliary relative electrode 223a and the main relative electrode 223m can comprise a (semi-)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), calcium (Ca), or alloys thereof. Alternatively, the auxiliary electrode 223a and the main electrode 223m may each comprise a layer containing ITO, IZO, ZnO, or In2O3, said layer being on / under a (semi-)transparent layer comprising the above material. According to some embodiments, the auxiliary electrode 223a and the main electrode 223m may each comprise silver (Ag) and magnesium (Mg).

[0127] A stacked structure of sequentially stacked main pixel electrode 221m, main emitting layer 222mb, and main opposing electrode 223m can constitute a light-emitting diode, such as an organic light-emitting diode (OLED). Figure 4 The stacked structure of auxiliary pixel electrode 221a, auxiliary emitter layer 222ab, and auxiliary counter electrode 223a can also constitute a light-emitting diode, such as an organic light-emitting diode (OLED). Figure 4 Organic light-emitting diodes (OLEDs) (see...) Figure 4 OLEDs can emit light such as red, green, or blue light (e.g., set-color light or predetermined-color light). Each organic light-emitting diode (OLED) (see...) Figure 4 The emission region of a pixel (or sub-pixel) corresponds to a pixel (or sub-pixel). As an example, the principal sub-pixel Pm (see...) Figures 1A to 1C This corresponds to the organic light-emitting diode (OLED) arranged in the main display area MDA (see...). Figure 4 The emission area of ​​). Auxiliary sub-pixel Pa (see Figures 1A to 1C This corresponds to the organic light-emitting diode OLED arranged in the component region CA (see Figure 4 The emission region of the pixel defining layer 119. The opening 119OP of the pixel defining layer 119 defines the size and / or width of the emission region, and therefore, the principal sub-pixel Pm (see Figures 1A to 1C ) and auxiliary sub-pixels Pa (see Figures 1A to 1C The size and / or width of the pixel-limiting layer 119 may depend on the opening 119OP of the pixel-limiting layer 119.

[0128] Organic light-emitting diode (OLED) (see) Figure 4 It can be covered by a thin film encapsulation layer 300 that includes a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0129] refer to Figure 5 The insulating layer on the substrate 100 may include holes formed in the transmission region TA. As an example, such as... Figure 5 As shown, the gate insulating layer 112, the first interlayer insulating layer 113, the second interlayer insulating layer 115, the first planarization layer 117, the second planarization layer 118, and the pixel defining layer 119 may each include a first hole H1, a second hole H2, a third hole H3, a fourth hole H4, a fifth hole H5, and a sixth hole H6, which are each arranged in the transmission region TA and overlap each other. In this case, the first functional layer 222a may be arranged on the buffer layer 111.

[0130] The first functional layer 222a and the second functional layer 222c can each cover the transmission region TA. Conversely, the auxiliary opposite electrode 223a can include an opening 223aH formed in the transmission region TA (between the auxiliary pixel electrodes 221a) to improve the transmittance of the transmission region TA. The opening 223aH of the auxiliary opposite electrode 223a can correspond to the opening portion BMLA of the bottom metal layer BML. The opening 223aH of the auxiliary opposite electrode 223a can be formed by irradiating a laser beam. That is, the opening 223aH of the auxiliary opposite electrode 223a can be formed in such a way that the auxiliary opposite electrode 223a is formed to cover the transmission region TA, and then a laser beam is irradiated onto the portion of the auxiliary opposite electrode 223a corresponding to the transmission region TA to remove the relevant portion.

[0131] When a laser beam is irradiated to form an opening 223aH in the auxiliary opposite electrode 223a, the laser beam can irradiate only a predetermined portion of the auxiliary opposite electrode 223a. For this purpose, as described above, the bottom metal layer BML can include an opening portion BMLA. That is, the laser beam can penetrate the substrate 100 and irradiate the bottom metal layer BML, and therefore, the laser beam can irradiate the portion of the auxiliary opposite electrode 223a corresponding to the opening portion BMLA of the bottom metal layer BML. Thus, the opening 223aH can be formed in the auxiliary opposite electrode 223a. Simultaneously (or concurrently), the bottom metal layer BML shields the laser beam during the laser beam irradiation process, and therefore, the elements of the auxiliary pixel circuit PCa (e.g., the auxiliary thin-film transistor TFTa), which includes an auxiliary semiconductor layer and an auxiliary gate electrode, disposed on the bottom metal layer BML, are not damaged by the laser beam. In this respect, the bottom metal layer BML can serve as a shielding layer.

[0132] As described above, by irradiating the bottom metal layer BML through the substrate 100 with a laser beam, an opening 223aH corresponding to the opening portion BMLA of the bottom metal layer BML is formed in the auxiliary opposite electrode 223a. Therefore, in a view perpendicular to the substrate 100, the opening 223aH of the auxiliary opposite electrode 223a overlaps with the opening portion BMLA of the bottom metal layer BML. The bottom metal layer BML, serving as a shielding layer, overlaps with the auxiliary semiconductor layer and auxiliary gate electrode of the auxiliary thin-film transistor TFTa. In the case where auxiliary wiring electrically connected to the auxiliary semiconductor layer exists within the component region CA, the bottom metal layer BML can overlap with the auxiliary wiring, thereby protecting the auxiliary wiring.

[0133] Although the laser beam illuminates the opening portion BMLA of the bottom metal layer BML, the laser beam may be diffracted while passing through the opening portion BMLA of the bottom metal layer BML, and therefore, the width of the laser beam may be slightly widened. Therefore, in a view perpendicular to the substrate 100 (e.g., a plan view) and in combination Figure 5 The area of ​​the transmission region TA' defined by each opening 223aH of the auxiliary relative electrode 223a can be slightly larger than the area of ​​the transmission region TA defined by the opening portion BMLA of the bottom metal layer BML corresponding to the transmission region TA'. Depending on the situation, the area of ​​the transmission region TA' defined by each opening 223aH of the auxiliary relative electrode 223a can be the same as the area of ​​the transmission region TA defined by the opening portion BMLA of the bottom metal layer BML corresponding to the transmission region TA'.

[0134] As described above, during the laser beam irradiation process, the portion of the auxiliary electrode 223a irradiated with the laser beam can be removed, but the portion of the bottom metal layer BML irradiated with the laser beam may not be removed. Therefore, the melting point of the material of the bottom metal layer BML, which serves as a shielding layer, needs to be higher than the melting point of the material of the auxiliary electrode 223a. As an example, the bottom metal layer BML may include molybdenum (Mo), copper (Cu), and / or titanium (Ti). The bottom metal layer BML may include a material from these materials that has a melting point higher than that of the material of the auxiliary electrode 223a.

[0135] Figure 6 This is a plan view of a portion of a display device 1 according to some embodiments. For example... Figure 6 As shown, in the component region CA, the auxiliary relative electrode 223a includes an overlapping portion 223aO and a connector 223aC. The overlapping portion 223aO is connected to the auxiliary pixel electrode 221a (see...). Figure 5 The overlapping portions 223aO and 223aC are connected by connector 223aC. As described above, the opening 223aH of the auxiliary relative electrode 223a can be defined by the portion surrounded by the overlapping portion 223aO and connector 223aC.

[0136] For reference only. Figure 6 The red sub-pixel Par, green sub-pixel Pag, and blue sub-pixel Pab within the component region CA are shown, and therefore, the red sub-pixel Par, green sub-pixel Pag, and blue sub-pixel Pab can be understood to correspond to the auxiliary pixel electrode 221a within the component region CA. As described above, in a view perpendicular to the substrate 100 (e.g., a plan view), the auxiliary opposite electrode 223a overlaps with the auxiliary pixel electrode 221a within the component region CA.

[0137] As referenced above Figure 5 As described, the auxiliary pixel electrode 221a is electrically connected to the auxiliary thin-film transistor TFTa via a contact metal CM', which serves as a connection wiring. The auxiliary thin-film transistor TFTa includes an auxiliary semiconductor layer and an auxiliary gate electrode. When the contact metal CM' is disconnected, the electrical connection between the auxiliary thin-film transistor TFTa and the auxiliary pixel electrode 221a becomes impossible. Therefore, the connector 223aC of the auxiliary opposing electrode 223a overlaps with the contact metal CM', which serves as a connection wiring, and thus, the contact metal CM', which serves as a connection wiring, is not damaged by the laser beam during the manufacturing process.

[0138] Figure 7 This is a plan view of a portion of a display device 1 according to some embodiments, showing the red sub-pixel Par, the green sub-pixel Pag, and the blue sub-pixel Pab in the component region CA, the auxiliary opposite electrode 223a, and the bottom metal layer BML as a shielding layer. (Refer to the above...) Figure 5 As described, the area of ​​each of the openings 223aH of the auxiliary relative electrode 223a can be larger than the area of ​​the opening portion BMLA of the bottom metal layer BML corresponding to each of the openings 223aH of the auxiliary relative electrode 223a. That is, when interpreted in reverse, the area of ​​the bottom metal layer BML, which serves as a shielding layer, can be equal to or greater than the area of ​​the auxiliary relative electrode 223a in the component region CA.

[0139] As referenced above Figure 5 As described, in a view perpendicular to the substrate 100, the area of ​​each transmission region TA' defined by the opening 223aH of the auxiliary opposite electrode 223a can be slightly larger than the area of ​​the transmission region TA defined by the opening portion BMLA of the bottom metal layer BML corresponding to the transmission region TA'. Therefore, in Figure 7 The diagram shows an orthogonal projection image of each of the opening portions BMLA of the bottom metal layer BML, arranged inside the corresponding opening 223aH in the opening 223aH from the auxiliary opposite electrode 223a, on the bottom metal layer BML. For example, when viewed from a direction perpendicular to the top surface of the substrate 100 (or from a plan view or a view perpendicular or orthogonal to the display surface), each of the opening portions BMLA of the bottom metal layer BML is positioned inside the edge of the corresponding one in the opening 223aH of the auxiliary opposite electrode 223a.

[0140] refer to Figure 5 and Figure 7In the component region CA, the auxiliary opposite electrode 223a includes an overlapping portion 223a0 and a connector 223aC. The overlapping portion 223a0 overlaps with the auxiliary pixel electrode 221a, and the connector 223aC connects to the overlapping portion 223a0. The bottom metal layer BML, serving as a shielding layer, may also include a main shielding portion BMLO and a connecting shielding portion BMLC. The main shielding portion BMLO overlaps with the auxiliary pixel electrode 221a, and the connecting shielding portion BMLC connects to the main shielding portion BMLO. The orthogonal projection image of the contact metal CM' on the bottom metal layer BML, serving as a shielding layer, is arranged inside the connecting shielding portion BMLC. The contact metal CM' is the connection wiring that electrically connects the auxiliary pixel electrode 221a to the auxiliary thin-film transistor TFTa. Specifically, when viewed from a direction perpendicular to the top surface of the substrate 100 (or from a plan view or a view perpendicular or orthogonal to the display surface), the contact metal CM' is positioned inside the connecting shielding portion BMLC. With this configuration, the contact metal CM', serving as a connection wiring, can be protected from damage by the laser beam during the manufacturing process.

[0141] Figure 8 This is a plan view of a portion of a display device 1 according to some embodiments. The display device 1 according to this embodiment and related... Figure 6 The difference in the display device 1 described according to the embodiment is that the overlapping portion 223aO of the auxiliary relative electrode 223a has a generally circular shape. The overlapping portion 223aO of the auxiliary relative electrode 223a has a generally circular shape, and thus, when light travels from the outside of the display device 1 toward the component 40 (see...) Figure 2 ) moving or from component 40 (see Figure 2 The light passes through component 40 (see Figure 2 When the transmission region is narrowed, diffraction can be reduced. This is illustrated in a plan view that is part of a display device 1 according to some embodiments. Figure 9 As shown, at a distance perpendicular to the base 100 (see...) Figure 5 In the view along the direction of the auxiliary opposite electrode 223a, the connector 223aC can have a curved shape, and thus, when light travels from the outside of the display device 1 toward the component 40 (see...), Figure 2 ) moving or from component 40 (see Figure 2 The light passes through component 40 (see Figure 2 When the transmission region is within the range of ), diffraction can be reduced even further.

[0142] At this point, for reference Figures 1A to 1C as well as Figures 2 to 9The auxiliary pixel circuit PCa, electrically connected to the auxiliary sub-pixel Pa inside the component region CA, has been described in the component region CA. However, embodiments of this disclosure are not limited thereto. That is, as in some embodiments, it may include... Figure 1A A plan view of the display panel 10 in the display device 1 Figure 10 As shown, the auxiliary pixel circuit PCa, electrically connected to the auxiliary sub-pixel Pa inside the component region CA, can be arranged in the peripheral region NDA. The auxiliary pixel circuit PCa may include an auxiliary thin-film transistor, which includes an auxiliary semiconductor layer and an auxiliary gate electrode.

[0143] Even in this case, multiple primary sub-pixels Pm are arranged in the main display area MDA. Furthermore, the primary pixel circuit PCm driving the primary sub-pixels Pm can be arranged in the main display area MDA and can overlap with the primary sub-pixels Pm. Additionally, the auxiliary pixel circuit PCa driving multiple auxiliary sub-pixels Pa in the component area CA can be arranged in the peripheral area NDA adjacent to the component area CA. Figure 3 As shown, when the component region CA is arranged above the display region DA (in the (+)y direction), the auxiliary pixel circuit PCa can be arranged in the top peripheral region NDA. Figure 10 As shown, the auxiliary pixel circuit PCa can be connected to the display element implementing the auxiliary sub-pixel Pa via a connection wiring TWL extending in one direction (e.g., the y-direction). Although in Figure 10 The illustration shows the auxiliary pixel circuit PCa positioned directly above the component region CA, but the embodiment is not limited to this. As an example, the auxiliary pixel circuit PCa can be positioned to the left (in the (-)x direction) or right (in the (+)x direction) of the main display region MDA. Various modifications are possible.

[0144] Figure 11A and Figure 11B This is a plan view of a portion of a display device 1 according to some embodiments. According to some embodiments, Figure 11A and Figure 11B The diagram shows the component area CA, a portion of the main display area MDA, and the peripheral area NDA adjacent to the main display area MDA.

[0145] refer to Figure 11A Multiple main subpixels Pm can be arranged in the main display area MDA. Here, a subpixel is the smallest unit for displaying an image and represents the emission area that emits light from the display element. When using an organic light-emitting diode as the display element, the emission area can be defined by an opening in the pixel-defining layer. This is the same as described above. Each of the multiple main subpixels Pm can emit red, green, blue, or white light.

[0146] The primary sub-pixel Pm arranged in the main display area MDA can include a first sub-pixel Pmr, a second sub-pixel Pmg, and a third sub-pixel Pmb. The first sub-pixel Pmr, the second sub-pixel Pmg, and the third sub-pixel Pmb can display red, green, and blue, respectively. The primary sub-pixel Pm can be arranged in a Pentile structure.

[0147] As an example, the first sub-pixel Pmr is arranged on the first and third vertices of the virtual quadrilateral, the second sub-pixel Pmg is centered on the center of the quadrilateral, and the third sub-pixel Pmb is arranged on the second and fourth vertices, which are the remaining vertices. According to some embodiments, the size of the second sub-pixel Pmg (i.e., the emission region) can be smaller than the size of the first sub-pixel Pmr (i.e., the emission region) and the third sub-pixel Pmb (i.e., the emission region).

[0148] This pixel arrangement structure is called a PenTile matrix structure or PenTile structure. By applying this method to render pixels by representing their colors through sharing the colors of their neighboring pixels, high resolution can be achieved with a small number of pixels.

[0149] Despite Figure 11A The illustration shows multiple principal sub-pixels Pm arranged in a Pentile matrix structure, but embodiments according to this disclosure are not limited thereto. As an example, the multiple principal sub-pixels Pm can be arranged in various configurations, such as stripe structures, mosaic arrangements, and triangular arrangements.

[0150] In the main display area MDA, the main pixel circuit PCm (see...) Figure 10 The main pixel circuit (PCm) can overlap with the primary sub-pixel (Pm) and can be arranged in a matrix configuration in the x and y directions. In this specification, the primary pixel circuit (PCm) can represent the unit of pixel circuitry that implements one primary sub-pixel (Pm).

[0151] Multiple auxiliary subpixels Pa can be arranged in the component area CA. Each of the multiple auxiliary subpixels Pa can emit red, green, blue, or white light. The auxiliary subpixels Pa can include a first subpixel Par, a second subpixel Pag, and a third subpixel Pab that display different colors respectively. The first subpixel Par, the second subpixel Pag, and the third subpixel Pab can display red, green, and blue respectively.

[0152] The number of auxiliary subpixels Pa per unit area in the component region CA can be less than the number of primary subpixels Pm per unit area in the main display region MDA. As an example, the number of auxiliary subpixels Pa and the number of primary subpixels Pm per unit area can be provided at ratios of 1:2, 1:4, 1:8, and 1:9. That is, the resolution of the component region CA can be approximately 1 / 2, 1 / 4, 1 / 8, or 1 / 9 of the resolution of the main display region MDA. Figure 11A This shows a case where the resolution of the component area CA is approximately 1 / 8 of the resolution of the main display area MDA.

[0153] Auxiliary subpixels Pa arranged in the component region CA can be arranged in various configurations. Some of the auxiliary subpixels Pa can be grouped together to form a pixel group, and can be arranged in various configurations within the pixel group, such as pentile structure, stripe structure, mosaic arrangement structure, and triangular arrangement structure. In this case, the distance between the auxiliary subpixels Pa arranged in the pixel group can be the same as the distance between the main subpixels Pm.

[0154] Alternatively, such as Figure 11A As shown, auxiliary sub-pixels Pa can be distributed within the component region CA. That is, the distance between auxiliary sub-pixels Pa can be greater than the distance between primary sub-pixels Pm. The area of ​​the component region CA where no auxiliary sub-pixels Pa are arranged can be a transmissive region TA with relatively high light transmittance.

[0155] The auxiliary pixel circuit PCa that enables the emission of the auxiliary sub-pixel Pa can be arranged in the peripheral region NDA. The auxiliary pixel circuit PCa is not arranged in the component region CA, and thus, the component region CA can ensure a relatively wide transmission region TA.

[0156] The auxiliary pixel circuit PCa can be connected to the auxiliary sub-pixel Pa via a connection wiring TWL. Therefore, as the length of the connection wiring TWL increases, RC delay may occur, and thus, the auxiliary pixel circuit PCa can be arranged by taking the length of the connection wiring TWL into account.

[0157] According to some embodiments, the auxiliary pixel circuit PCa can be arranged on an extension line connecting the auxiliary sub-pixels Pa arranged in the y-direction. Furthermore, the auxiliary pixel circuit PCa can be arranged in the y-direction in the same number as the number of auxiliary sub-pixels Pa arranged in the y-direction. As an example, in... Figure 11A As shown, in the component region CA, when two auxiliary sub-pixels Pa are arranged in the y-direction, in the peripheral region NDA, two auxiliary pixel circuits PCa can be arranged in the y-direction.

[0158] The connection wiring TWL can extend in the y-direction to connect the auxiliary sub-pixel Pa to the auxiliary pixel circuit PCa. When the connection wiring TWL is connected to the auxiliary sub-pixel Pa, this means that the connection wiring TWL is electrically connected to the auxiliary pixel electrode of the display element that implements the auxiliary sub-pixel Pa.

[0159] The scan line SL may include a main scan line SLm and an auxiliary scan line SLa. The main scan line SLm is connected to the main pixel circuit PCm, and the auxiliary scan line SLa is connected to the auxiliary pixel circuit PCa. The main scan line SLm may extend in the x-direction and may be connected to the main pixel circuit PCm arranged on the same row. The main scan line SLm may not be arranged in the component region CA. That is, the main scan line SLm may be disconnected from the component region CA, which is located between the main scan lines SLm. In this case, the main scan line SLm on the left side of the component region CA may receive signals from the first scan drive circuit SDR1 (see...). Figure 10 The signal can be received from the second scan drive circuit SDR2 (see component area CA) on the right side of the main scan line SLm. Figure 10 () signal.

[0160] The auxiliary scan line SLa can extend in the x-direction and can be connected to the auxiliary pixel circuit PCa. The auxiliary scan line SLa can be arranged in the peripheral region NDA.

[0161] The main scan line SLm can be connected to the auxiliary scan line SLa via the scan connection line SWL, and therefore, the same signal can be applied to the pixel circuits PCm that drive the main sub-pixel Pm and the auxiliary sub-pixel Pa arranged on the same row (see Figure 10 The scan connection line SWL can be arranged on a different layer from the main scan line SLm and the auxiliary scan line SLa, and can be connected to the main scan line SLm and the auxiliary scan line SLa through contact holes. The scan connection line SWL can be arranged in the peripheral area NDA.

[0162] The data line DL may include a main data line DLm and an auxiliary data line DLa. The main data line DLm is connected to the main pixel circuit PCm, and the auxiliary data line DLa is connected to the auxiliary pixel circuit PCa. The main data line DLm may extend in the y-direction and may be connected to the main pixel circuit PCm arranged in the same column (see...). Figure 10 The auxiliary data line DLa can extend in the y-direction and can be connected to the auxiliary pixel circuit PCa arranged on the same column.

[0163] The main data line DLm can be separated from the auxiliary data line DLa, and the component area CA is located between the main data line DLm and the auxiliary data line DLa. The main data line DLm can be connected to the auxiliary data line DLa via the data connection line DWL, and therefore, the same signal can be applied to the pixel circuits PCm that drive the main sub-pixel Pm and the auxiliary sub-pixel Pa arranged in the same column (see...). Figure 10 ) and PCa.

[0164] The data connection line (DWL) can bypass the component area (CA). According to some embodiments, the data connection line (DWL) can connect to the main pixel circuitry (PCm) arranged in the main display area (MDA) (see...). Figure 10 (Overlap.) The data connection lines (DWL) are arranged within the main display area (MDA), and therefore, there is no need to ensure separate space for arranging the data connection lines (DWL). Thus, the area of ​​unused space can be minimized.

[0165] According to some embodiments, the data connection line (DWL) can be arranged in the intermediate area between the main display area (MDA) and the component area (CA).

[0166] The data connection cable DWL can be arranged on a different layer from the main data line DLm and the auxiliary data line DLa, and can be connected to the main data line DLm and the auxiliary data line DLa through contact holes.

[0167] Despite Figure 11A The diagram illustrates that the connecting wiring TWL from the peripheral region NDA to the component region CA is uniformly provided on the auxiliary sub-pixel Pa, but embodiments according to this disclosure are not limited thereto. As an example, such as... Figure 11B and as according to some embodiments Figure 11B A portion of the cross-sectional view Figure 12 As shown, the connection wiring TWL may include a first connection wiring TWL1 and a second connection wiring TWL2, and the first connection wiring TWL1 and the second connection wiring TWL2 may be made of different materials.

[0168] The first connection wiring TWL1 may be a wiring disposed in the peripheral region NDA and connected to the auxiliary pixel circuit PCa. The first connection wiring TWL1 may include a conductive material and may have a single-layer or multi-layer structure including the following conductive materials: molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Multiple first connection wirings TWL1 may be provided between the auxiliary pixel circuits PCa. According to some embodiments, the first connection wiring TWL1 may include a (1-1)th connection wiring TWL1a and a (1-2)th connection wiring TWL1b disposed on different layers. As an example, the (1-1)th connection wiring TWL1a and the data line DL may be positioned on the same layer and may include the same material (see...). Figure 12 The (1-2)th connection wiring TWL1b can be separated from the (1-1)th connection wiring TWL1a, with an insulating layer (e.g., the first planarization layer 117) between the (1-2)th connection wiring TWL1b and the (1-1)th connection wiring TWL1a (see...). Figure 12 In the plan view, the (1-1)th connection wiring TWL1a and the (1-2)th connection wiring TWL1b can be arranged between the auxiliary pixel circuits PCa, and can be at least partially bent. The (1-1)th connection wiring TWL1a and the (1-2)th connection wiring TWL1b arranged on different layers can be provided as multiple wirings and can be arranged alternately in the area between multiple pixel circuits PCa.

[0169] The second connection wiring TWL2 may be wiring disposed in the component region CA and connected between the first connection wiring TWL1 and the edge of the component region CA. The second connection wiring TWL2 may include a transparent conductive material.

[0170] The first connection wiring TWL1 and the second connection wiring TWL2 can be located on the same layer or on different layers. If the first connection wiring TWL1 and the second connection wiring TWL2 are located on different layers, the first connection wiring TWL1 can be connected to the second connection wiring TWL2 via a contact hole.

[0171] The conductivity of the first connection wiring TWL1 can be higher than that of the second connection wiring TWL2. The first connection wiring TWL1 is disposed in the peripheral area NDA, and therefore, it is not necessary to ensure light transmittance. Therefore, the first connection wiring TWL1 can be made of a material with low light transmittance and high conductivity. Thus, the resistance value of the connection wiring TWL can be reduced.

[0172] In addition, such as Figure 11B As shown, the lengths of the multiple second connection lines TWL2 can be the same. As an example, the ends of the multiple second connection lines TWL2 can extend to the boundary on the opposite side of the component region CA where the auxiliary pixel circuit PCa is arranged. This is to match the electrical load caused by the second connection lines TWL2. Therefore, luminance deviation in the component region CA can be reduced. The number of second connection lines TWL2 in the component region CA and the number of auxiliary pixel circuits PCa can be the same.

[0173] like Figure 7 , Figure 11A , Figure 11B and Figure 12 As shown, in a view perpendicular to the base 100, the wiring in the component region CA (e.g., Figure 11A TWL and connection wiring in Figure 11BThe second connection wiring TWL2 in the diagram can overlap with the bottom metal layer BML, which serves as a shielding layer. As an example, in the case where the bottom metal layer BML includes a main shielding portion BMLO and a connection shielding portion BMLC, the main shielding portion BMLO overlaps with the auxiliary pixel electrode 221a, and the connection shielding portion BMLC is connected to the main shielding portion BMLO. The connection wiring TWL can overlap with the connection shielding portion BMLC. Figure 11A TWL and connection wiring in Figure 11B The orthogonal projection image of the second connection wiring TWL2 on the bottom metal layer BML, which serves as a shielding layer, is arranged inside the connection shielding portion BMLC. Specifically, when viewed from a direction perpendicular to the top surface of the substrate 100 (or from a plan view or a view that is perpendicular or orthogonal to the display surface), Figure 11A TWL and connection wiring in Figure 11B The second connection wiring TWL2 is located inside the connection shield portion BMLC. In this case... Figure 11A TWL and connection wiring in Figure 11B The second connection wiring TWL2 can also overlap with the connector 223aC of the auxiliary opposite electrode 223a. With this configuration, the connection wiring TWL can be protected from damage by the laser beam during the manufacturing process.

[0174] So far, although the case where the bottom metal layer BML serves as a shielding layer has been described, the embodiments according to this disclosure are not limited thereto. As an example, a cross-sectional view as part of a display device 1 according to some embodiments is shown. Figure 13 As shown, the shielding layer GS and the auxiliary gate electrode G1a of the auxiliary thin-film transistor TFTa can be positioned on the same layer. According to some embodiments, the shielding layer GS and... Figure 5 The main gate electrode G1 of the main thin-film transistor TFTm in the main display area MDA shown can be located on the same layer. This is because... Figure 13 Each of the elements of the auxiliary thin-film transistor TFTa arranged in the peripheral region NDA shown in the figure and Figure 5 The corresponding elements of the main thin-film transistor TFTm arranged in the main display area MDA shown can be positioned on the same layer and can comprise the same material. Therefore, the shielding layer GS, the auxiliary gate electrode G1a of the auxiliary thin-film transistor TFTa, and... Figure 5 The main gate electrode G1 of the main thin-film transistor TFTm shown may include the same material and may have the same layer structure.

[0175] The shielding layer GS may include multiple openings GSA, each GSA defining a transmission region TA within the component region CA. All descriptions of the openings BMLA of the bottom metal layer BML apply to the openings GSA of the shielding layer GS. However, as... Figure 13 As shown, the gate insulating layer 112 and the first interlayer insulating layer 113 do not include holes. The second interlayer insulating layer 115, the first planarization layer 117, the second planarization layer 118, and the pixel defining layer 119 can each be arranged in the transmission region TA and can each include a third hole H3, a fourth hole H4, a fifth hole H5, and a sixth hole H6. In this case, the first functional layer 222a can be arranged on the first interlayer insulating layer 113 in the transmission region TA.

[0176] Alternatively, the display device may include a pixel electrode 221a disposed between the auxiliary gate electrode G1a and the auxiliary pixel electrode 221a and / or Figure 5 The wiring between the main gate electrode G1 and the main pixel electrode 221m shown in the diagram, and the shielding layer GS and the wiring can include the same material and can be positioned on the same layer. In this case, the first functional layer 222a can be arranged on the layer covering the wiring.

[0177] According to some embodiments, a display device can be implemented that can display images even in component areas and is easily manufactured. However, the scope of the embodiments according to this disclosure is not limited by this effect.

[0178] It should be understood that the embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the following claims and their equivalents.

Claims

1. A display device, wherein, The display device includes: The base includes the main display area, component area, and peripheral area; Multiple main pixel electrodes are located in the main display area of ​​the substrate; Multiple auxiliary pixel electrodes are located in the component region of the substrate; An auxiliary opposing electrode, on top of the auxiliary pixel electrode, overlapping the auxiliary pixel electrode, and including a plurality of openings between the auxiliary pixel electrodes; and A shielding layer, located below the auxiliary pixel electrode, includes multiple opening portions that overlap with the multiple openings of the auxiliary opposing electrode. In the plan view, each of the opening portions is located inside the edge of the corresponding one of the openings in the auxiliary opposite electrode.

2. The display device according to claim 1, wherein, The display device further includes: The main relative electrode is located on top of and overlaps with the main pixel electrode.

3. The display device according to claim 2, wherein, The main relative electrode is connected to the auxiliary relative electrode.

4. The display device according to claim 1, wherein, The auxiliary relative electrode includes multiple overlapping portions and connectors, the overlapping portions overlapping the auxiliary pixel electrode, and the connectors connecting the overlapping portions.

5. The display device according to claim 4, wherein, In the plan view, the connector has a curved shape.

6. The display device according to claim 1, wherein, The melting point of the shielding layer is higher than that of the auxiliary opposite electrode.

7. The display device according to claim 1, wherein, The area of ​​the shielding layer is equal to or greater than the area of ​​the auxiliary opposite electrode.

8. The display device according to claim 1, wherein, The display device further includes: The main thin-film transistor, in the main display region of the substrate, is electrically connected to the main pixel electrode and includes a main semiconductor layer and a main gate electrode. The shielding layer and the main gate electrode are on the same layer.

9. The display device according to claim 8, wherein, The shielding layer and the main gate electrode are made of the same material.

10. The display device according to claim 1, wherein, The display device further includes: A main thin-film transistor, electrically connected to the main pixel electrode in the main display region of the substrate, and includes a main semiconductor layer and a main gate electrode; and Wiring is provided between the main gate electrode and the main pixel electrode. The shielding layer and the wiring are on the same layer.

11. The display device according to claim 10, wherein, The shielding layer and the wiring are made of the same material.

12. The display device according to claim 1, wherein, The display device further includes: A main thin-film transistor, electrically connected to the main pixel electrode in the main display region of the substrate, and includes a main semiconductor layer and a main gate electrode; and The bottom metal layer is located below the main semiconductor layer. The shielding layer and the bottom metal layer are on the same layer.

13. The display device according to claim 12, wherein, The shielding layer and the bottom metal layer are made of the same material.

14. The display device according to claim 1, wherein, The display device further includes: The main thin-film transistor is electrically connected to the main pixel electrode in the main display region of the substrate, and includes a main semiconductor layer and a main gate electrode; An auxiliary thin-film transistor, located in the peripheral region of the substrate and including an auxiliary semiconductor layer and an auxiliary gate electrode; and Connect the wiring to electrically connect the auxiliary thin-film transistor to the auxiliary pixel electrode.

15. The display device according to claim 14, wherein, The auxiliary opposite electrode includes multiple overlapping portions and connectors. The overlapping portions overlap with the auxiliary pixel electrode, and the connectors connect the overlapping portions. The connector overlaps with the connecting wiring.

16. The display device according to claim 15, wherein, The shielding layer includes a main shielding portion and a connecting shielding portion. The main shielding portion overlaps with the auxiliary pixel electrode, and the connecting shielding portion is connected to the main shielding portion. In the plan view, in the component area, the connection wiring is arranged in the connection shielding portion.

17. The display device according to claim 1, wherein, The display device further includes: A main thin-film transistor, electrically connected to the main pixel electrode in the main display region of the substrate, and includes a main semiconductor layer and a main gate electrode; and An auxiliary thin-film transistor, electrically connected to the auxiliary pixel electrode in the component region of the substrate, and includes an auxiliary semiconductor layer and an auxiliary gate electrode. The shielding layer is located below the auxiliary semiconductor layer.

18. The display device according to claim 17, wherein, The shielding layer overlaps with the auxiliary semiconductor layer and the auxiliary gate electrode.

19. The display device according to claim 17, wherein, The display device further includes: Auxiliary wiring is provided in the component region of the substrate and connected to the auxiliary semiconductor layer. The shielding layer overlaps with the auxiliary wiring.

20. The display device according to claim 1, wherein, The display device further includes: Components, located below the substrate, corresponding to the component region.

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