一种体声波谐振器及其制造方法
By creating a fracture region in the piezoelectric layer and using ion bombardment to isolate the top and bottom electrodes, the parasitic oscillation problem in thin-film bulk acoustic resonators was solved, improving resonator performance, simplifying the process, and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU XINGHE TECH CO LTD
- Filing Date
- 2021-12-24
- Publication Date
- 2026-07-17
AI Technical Summary
The overlapping area between the top and bottom electrodes of existing thin-film bulk acoustic resonators leads to parasitic oscillations, affecting the resonator performance. Furthermore, existing isolation methods, such as air bridge structures, are complex to manufacture and have poor mechanical stability at high frequencies.
By creating fracture regions in certain areas of the piezoelectric layer, and then using ion bombardment to de-piezoelectricity in these regions, Ar+, Kr+, and Xe+ ions are used to bombard the piezoelectric layer to form fracture layers, thereby isolating the top and bottom electrodes and reducing parasitic oscillations.
It effectively suppresses parasitic oscillations in the resonator, improves the resonator's performance, simplifies the manufacturing process, reduces costs, and enhances mechanical stability.
Smart Images
Figure CN114389565B_ABST