A rapid thermal processing method and apparatus

Abstract

The embodiments of the present disclosure disclose a rapid thermal processing method and device, wherein the rapid thermal processing method comprises the following steps: providing a wafer; performing a first heating step on the wafer to heat the wafer to a first temperature; controlling the wafer to start rotating; maintaining the first temperature for a first predetermined time; performing a second heating step on the wafer to heat the wafer from the first temperature to a second temperature, and maintaining the second temperature for a second predetermined time; performing a third heating step on the wafer to heat the wafer from the second temperature to a third temperature, and maintaining the third temperature for a third predetermined time.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor device manufacturing technology, and in particular to a rapid thermal processing method and apparatus. Background Technology

[0002] In semiconductor device manufacturing, Rapid Thermal Processing (RTP) is used to rapidly and uniformly heat wafers. It is commonly applied in dopant activation and diffusion after ion implantation, tempering after metal silicide formation, and tempering of gate oxide layers. However, RTP can also affect wafers, causing them to bend. Summary of the Invention

[0003] In view of this, embodiments of the present disclosure provide a rapid heat treatment method and apparatus.

[0004] According to a first aspect of the present disclosure, a rapid heat treatment method is provided, comprising:

[0005] Provide wafers;

[0006] The wafer is subjected to a first heating step to raise the temperature of the wafer to a first temperature;

[0007] Control the wafer to begin rotating;

[0008] Maintain the first temperature for a first predetermined time;

[0009] A second heating step is performed on the wafer to raise the temperature of the wafer from a first temperature to a second temperature, and the second temperature is maintained for a second predetermined time.

[0010] A third heating step is performed on the wafer to raise the temperature from the second temperature to the third temperature, and the third temperature is maintained for a third predetermined time.

[0011] In some embodiments, the wafer rotation speed is 100 to 300 rpm / min.

[0012] In some embodiments, it also includes:

[0013] After the wafer is maintained at the third temperature for a third predetermined time, the wafer is cooled to the fourth temperature and the rotation of the wafer is stopped.

[0014] In some embodiments, after the wafer is heated to a first temperature and before the wafer is controlled to begin rotating, the method further includes:

[0015] The first temperature is maintained for a fourth predetermined time, and the wafer is moved toward the heating device during the fourth predetermined time.

[0016] In some embodiments, it also includes:

[0017] An inert gas is introduced during the fourth predetermined time and the first predetermined time period of maintaining the first temperature.

[0018] In some embodiments, the inert gas has a flow rate of 50 to 150 slm, and the inert gas includes at least one of nitrogen, argon, or helium.

[0019] In some embodiments, the first temperature ranges from 150 to 200°C, the second temperature ranges from 450 to 650°C, and the third temperature ranges from 800 to 1100°C.

[0020] In some embodiments, providing the wafer includes placing the wafer on a carrier platform, the carrier platform being annular in shape, the wafer including a peripheral region and an inner region, the peripheral region being in contact with the carrier platform, and the inner region being exposed from the middle portion of the annular carrier platform;

[0021] Heating is performed using a heating device located below the support platform. The heating device includes multiple heating units, wherein the heating unit located below the inner region of the wafer has a higher heating temperature than the heating unit located below the outer region of the wafer.

[0022] In some embodiments, the first predetermined time is 5 to 20 seconds; the second predetermined time is 10 to 20 seconds; and the third predetermined time is 5 to 60 seconds.

[0023] In some embodiments, the heating rate of the wafer to a first temperature is a first rate, the heating rate of the wafer from the first temperature to a second temperature is a second rate, and the heating rate of the wafer from the second temperature to a third temperature is a third rate; wherein the first rate, the second rate, and the third rate exhibit an increasing trend.

[0024] In some embodiments, the first rate ranges from 15 to 30 °C / s, the second rate ranges from 40 to 80 °C / s, and the third rate ranges from 100 to 250 °C / s.

[0025] According to a second aspect of the present disclosure, a rapid heat treatment apparatus is provided, comprising:

[0026] A support platform for placing wafers;

[0027] A heating device is located under the support platform; the heating device is used to perform a first heating step on the wafer, raising the wafer to a first temperature and maintaining the first temperature for a first predetermined time; to perform a second heating step on the wafer, raising the wafer from the first temperature to a second temperature and maintaining the second temperature for a second predetermined time; and to perform a third heating step on the wafer, raising the wafer from the second temperature to a third temperature and maintaining the third temperature for a third predetermined time.

[0028] A rotating device is used to control the wafer to start rotating when the wafer is heated to a first temperature.

[0029] In some embodiments, the heating device is further configured to maintain the first temperature for a fourth predetermined time before controlling the wafer to begin rotating;

[0030] The device further includes a driving device for moving the wafer toward the heating device during the fourth predetermined time period.

[0031] In some embodiments, it also includes:

[0032] An air intake device is used to introduce inert gas during a fourth predetermined time and a first predetermined time period while maintaining the first temperature.

[0033] In some embodiments, the support stage is annular, the wafer includes a peripheral region and an inner region, the peripheral region is in contact with the support stage, and the inner region is exposed from the middle portion of the annular support stage;

[0034] The heating device is located below the support platform and includes multiple heating units, wherein the heating unit located below the inner region of the wafer has a higher heating temperature than the heating unit located below the outer region of the wafer.

[0035] In some embodiments, the heating device is further configured to: cool the wafer to a fourth temperature after the wafer has maintained the third temperature for a third predetermined time;

[0036] The rotating device is also configured to stop rotating the wafer after the wafer has cooled to a fourth temperature.

[0037] In this embodiment of the disclosure, during the rapid thermal processing, the wafer heating process is divided into three stages. After reaching the temperature of each stage, it is maintained for a certain period of time to allow the wafer heating process to have a buffer time, ensuring that the wafer structure is more stable and preventing the wafer from bending upwards. At the same time, the wafer is rotated, and centrifugal force and the wafer's own gravity are used to further reduce the possibility of the wafer bending upwards and causing chip skipping. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this disclosure or in the conventional art, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram showing the wafer bending upwards in some embodiments;

[0040] Figure 2 A schematic flowchart of a rapid heat treatment method provided in an embodiment of this disclosure;

[0041] Figure 3 A graph showing the rapid heat treatment method provided in the embodiments of this disclosure during the processing;

[0042] Figures 4a to 4c This is a schematic diagram of the structure of the rapid heat treatment method provided in the embodiments of this disclosure during the processing.

[0043] Figure 5 This is a schematic diagram illustrating the downward bending of the wafer in an embodiment of this disclosure;

[0044] Figure 6 This is a schematic diagram of the heating device in an embodiment of the present disclosure;

[0045] Figure 7 This is a schematic diagram of the structure of the rapid heat treatment apparatus provided in the embodiments of this disclosure.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10 - Wafer; 20 - Stage; 30 - Heating device; 40 - Air intake device Detailed Implementation

[0048] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0049] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0050] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0051] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0052] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0053] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0054] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0055] In some embodiments, rapid thermal processing can activate dopant ions or repair lattice damage. Especially after ion implantation, rapid thermal processing places stricter requirements on the heating rate and time of the process. However, higher heating rates place a greater load on the wafer itself. Specifically, for example... Figure 1 As shown, the wafer may bend upwards, leading to chip skipping or even breakage, reducing component lifespan, increasing production costs, and in severe cases, potentially causing adverse effects on subsequent processes.

[0056] This disclosure provides a rapid heat treatment method; please refer to the appendix for details. Figure 2 As shown in the figure, the method includes the following steps:

[0057] Step 201: Provide wafers;

[0058] Step 202: Perform a first heating step on the wafer to raise the temperature of the wafer to a first temperature;

[0059] Step 203: Control the wafer to start rotating;

[0060] Step 204: Maintain the first temperature for a first predetermined time;

[0061] Step 205: Perform a second heating step on the wafer, raising the temperature of the wafer from a first temperature to a second temperature, and maintaining the second temperature for a second predetermined time;

[0062] Step 206: Perform a third heating step on the wafer, raising the wafer from a second temperature to a third temperature, and maintaining the third temperature for a third predetermined time.

[0063] In this embodiment of the disclosure, during the rapid thermal processing, the wafer heating process is divided into three stages. After reaching the temperature of each stage, it is maintained for a certain period of time to allow the wafer heating process to have a buffer time, ensuring that the wafer structure is more stable and preventing the wafer from bending upwards. At the same time, the wafer is rotated, and centrifugal force and the wafer's own gravity are used to further reduce the possibility of the wafer bending upwards and causing chip skipping.

[0064] The rapid heat treatment method provided in this disclosure will be further described in detail below with reference to specific embodiments.

[0065] Figure 3 The graphs shown are curves illustrating the rapid heat treatment method provided in this embodiment of the present disclosure during the processing. Figures 4a to 4c This is a schematic diagram of the rapid heat treatment method provided in the embodiments of this disclosure during the processing.

[0066] First, see Figure 4a Execute step 201, providing wafer 10.

[0067] In one embodiment, the wafer 10 can be a wafer made of any semiconductor material, such as a silicon wafer, a sapphire wafer, or a silicon carbide wafer. The wafer in this embodiment can be a silicon wafer, such as silicon wafers of various suitable semiconductor substrate application sizes, such as 2-inch, 4-inch, 6-inch, 8-inch, or 12-inch wafers.

[0068] The wafer 10 is placed on the support stage 20.

[0069] Next, step 202 is executed, in which the wafer 10 undergoes a first heating step, raising the temperature of the wafer 10 to a first temperature. (See also...) Figure 3 The first temperature is T1 in the figure.

[0070] In one embodiment, the first temperature T1 is in the range of 150–200°C.

[0071] The wafer 10 is heated to the first temperature T1 by open-loop tuning.

[0072] In one embodiment, the wafer 10 can be heated by a heating device 30.

[0073] Specifically, the heating device 30 can be a halogen lamp.

[0074] In one embodiment, providing the wafer 10 includes: placing the wafer 10 on a support stage 20, the support stage 20 being annular in shape, the wafer 10 including an outer region and an inner region, the outer region being in contact with the support stage 20, and the inner region being exposed from the middle portion of the annular support stage 20, i.e., the inner region not in contact with the support stage 20; and performing a heating operation using a heating device 30, the heating device 30 being located below the support stage 20, and the heating device 30 including multiple heating units, wherein the heating temperature of the heating unit located below the inner region of the wafer 10 is greater than the heating temperature of the heating unit located below the outer region of the wafer 10.

[0075] Because the outer area of ​​the wafer is in contact with the substrate, and the substrate is made of rubber, which has good heat absorption, while the inner area of ​​the wafer that is not in contact with the substrate conducts heat through the air, its heat absorption is somewhat worse than that of rubber. Therefore, the heating temperature below the area of ​​the wafer that is in contact with the substrate is lower than the heating temperature below the inner area of ​​the wafer that is not in contact with the substrate. This allows the overall temperature of the wafer to reach a balance, the wafer surface to be heated more evenly, and reduces the possibility of warping or damage to the wafer due to temperature imbalance.

[0076] Next, see Figure 4b After the wafer 10 is heated to a first temperature T1, but before the wafer 10 begins to rotate, the method further includes: maintaining the first temperature T1 for a fourth predetermined time, and moving the wafer 10 toward the heating device 30 during the fourth predetermined time. See also Figure 3 The fourth predetermined time is t4 in the figure.

[0077] In one embodiment, the fourth predetermined time t4 ranges from 5 to 20 seconds.

[0078] After the wafer 10 is heated to the first temperature T1, it needs to be heated to a higher temperature. Therefore, the wafer 10 needs to be moved closer to the heating device 30. In this way, when the temperature is raised to a higher temperature, the wafer 10 can be closer to the heating device 30, thereby reducing heat loss and lowering costs.

[0079] In specific operation, the wafer 10 placed on the support platform 20 is moved by moving the support platform 20 toward the heating device 30.

[0080] Next, see Figure 4c Step 203 is executed, controlling the wafer 10 to start rotating.

[0081] Specifically, the wafer 10 is rotated by a rotating device (not shown in the figure).

[0082] The wafer 10 rotates at a speed of 100–300 rpm / min. Within this range, the possibility of the wafer 10 bending upwards is better reduced, while avoiding downward bending due to excessive rotation speed.

[0083] Next, step 204 is executed, maintaining the first temperature T1 for a first predetermined time. See also Figure 3 The first predetermined time is t1 in the figure.

[0084] In one embodiment, the first predetermined time t1 ranges from 5 to 20 seconds.

[0085] In one embodiment, the method further includes introducing an inert gas during the period between the fourth predetermined time t4 and the first predetermined time t1 when the first temperature T1 is maintained.

[0086] The inert gas has a flow rate of 50 to 150 slm, and the inert gas includes at least one of nitrogen, argon, or helium.

[0087] Figure 5 This is a schematic diagram illustrating the downward bending of the wafer in an embodiment of this disclosure. During the fourth predetermined time t4, as the wafer 10 moves towards the heating device 30, the wafer 10 may bend downwards, such as... Figure 5 As shown, the downward bending of the wafer can cause friction between the wafer and the components at the bottom, resulting in wafer damage and reduced component lifespan. Therefore, when the wafer 10 moves toward the heating device 30, an inert gas needs to be introduced to prevent the wafer 10 from bending downward.

[0088] The inert gas can be introduced into the space below the wafer 10 through the gas inlet device 40.

[0089] In one specific embodiment, such as Figure 6 As shown, the heating device 30 includes 15 heating units, which are divided into the first to the fifteenth heating units from the center of the heating device 30 outwards, and are referred to as Z1 to Z15 respectively.

[0090] During the fourth predetermined time t4 and the first predetermined time t1 of maintaining the first temperature T1, the heating power range of the first heating unit Z1 is 400-800W, the heating power range of the second heating unit Z2 to the fourth heating unit Z6 is 1000-1400W, the heating power range of the eighth heating unit Z8 to the twelfth heating unit Z12 is 400-800W, and the heating power range of the thirteenth heating unit Z13 to the fifteenth heating unit Z15 is 0-700W; the heating power range of the seventh heating unit Z7 is different during the fourth predetermined time t4 and the first predetermined time t1, wherein during the fourth predetermined time t4, the heating power range of the seventh heating unit Z7 is 1100-1300W, and during the first predetermined time t1, the heating power range of the seventh heating unit Z7 is 400-800W.

[0091] Next, step 205 is executed, performing a second heating step on the wafer 10, raising the temperature of the wafer 10 from a first temperature to a second temperature, and maintaining the second temperature for a second predetermined time. See also Figure 3 The second temperature is T2 in the figure, and the second predetermined time is t2 in the figure.

[0092] In one embodiment, the second temperature T2 ranges from 450 to 650°C, and the second predetermined time t2 ranges from 10 to 20 seconds.

[0093] Next, step 206 is executed, performing a third heating step on the wafer 10, raising the wafer 10 from the second temperature to the third temperature, and maintaining the third temperature for a third predetermined time. See also Figure 3 The third temperature is T3 in the figure, and the third predetermined time is t3 in the figure.

[0094] In one embodiment, the third temperature T3 ranges from 800 to 1100°C, and the third predetermined time t3 ranges from 5 to 60 seconds.

[0095] In one embodiment, the heating rate of the wafer 10 to a first temperature T1 is a first rate, the heating rate of the wafer 10 from the first temperature T1 to a second temperature T2 is a second rate, and the heating rate of the wafer 10 from the second temperature T2 to a third temperature T3 is a third rate; wherein the first rate, the second rate, and the third rate show an increasing trend.

[0096] The first rate ranges from 15 to 30°C / s, the second rate ranges from 40 to 80°C / s, and the third rate ranges from 100 to 250°C / s.

[0097] Next, the method further includes: after the wafer 10 is maintained at a third temperature T3 for a third predetermined time t3, cooling the wafer 10 to a fourth temperature and stopping the rotation of the wafer 10. See also Figure 3 The fourth temperature is T4 in the figure.

[0098] In one embodiment, the fourth temperature T4 is in the range of 350–550°C.

[0099] The rate at which the wafer 10 cools from the third temperature T3 to the fourth temperature T4 is the fourth rate, and the fourth rate ranges from 50 to 100 °C / s.

[0100] During the process of heating wafer 10 to the first temperature T1 and cooling wafer 10 to the fourth temperature T4, wafer 10 was rotated. This helps to reduce the possibility of wafer bending upwards and skipping during the entire rapid heat treatment process by utilizing centrifugal force and the wafer's own gravity.

[0101] This disclosure provides a rapid heat treatment apparatus. Figure 7 This is a schematic diagram of the structure of the rapid heat treatment apparatus provided in the embodiments of this disclosure.

[0102] like Figure 7 As shown, the rapid heat treatment apparatus includes:

[0103] A support stage 20 is used to place the wafer 10; a heating device 30 is located below the support stage 20; the heating device 30 is used to perform a first heating step on the wafer 10, raising the wafer 10 to a first temperature and maintaining the first temperature for a first predetermined time; performing a second heating step on the wafer 10, raising the wafer 10 from the first temperature to a second temperature and maintaining the second temperature for a second predetermined time; performing a third heating step on the wafer 10, raising the wafer 10 from the second temperature to a third temperature and maintaining the third temperature for a third predetermined time; a rotating device (not shown in the figure) is used to control the wafer 10 to start rotating when the wafer 10 is raised to the first temperature.

[0104] In one embodiment, the wafer 10 can be a wafer made of any semiconductor material, such as a silicon wafer, a sapphire wafer, or a silicon carbide wafer. The wafer in this embodiment can be a silicon wafer, such as silicon wafers of various suitable semiconductor substrate application sizes, such as 2-inch, 4-inch, 6-inch, 8-inch, or 12-inch wafers.

[0105] See Figure 3The first temperature is T1 in the figure, the first predetermined time is t1 in the figure, the second temperature is T2 in the figure, the second predetermined time is t2 in the figure, the third temperature is T3 in the figure, and the third predetermined time is t3 in the figure.

[0106] In one embodiment, the first temperature T1 ranges from 150 to 200°C, the second temperature T2 ranges from 450 to 650°C, and the third temperature T3 ranges from 800 to 1100°C.

[0107] In one embodiment, the first predetermined time t1 ranges from 5 to 20 seconds, the second predetermined time t2 ranges from 10 to 20 seconds, and the third predetermined time t3 ranges from 5 to 60 seconds.

[0108] In one specific embodiment, the heating device 30 can be a halogen lamp.

[0109] In one embodiment, the heating rate of the wafer 10 to a first temperature T1 is a first rate, the heating rate of the wafer 10 from the first temperature T1 to a second temperature T2 is a second rate, and the heating rate of the wafer 10 from the second temperature T2 to a third temperature T3 is a third rate; wherein the first rate, the second rate, and the third rate show an increasing trend.

[0110] The first rate ranges from 15 to 30°C / s, the second rate ranges from 40 to 80°C / s, and the third rate ranges from 100 to 250°C / s.

[0111] In one embodiment, the support stage 20 is annular, the wafer 10 includes an outer region and an inner region, the outer region is in contact with the support stage 20, and the inner region is exposed from the middle portion of the annular support stage 20; the heating device 30 is located below the support stage 20, and the heating device 30 includes a plurality of heating units, wherein the heating temperature of the heating unit located below the inner region of the wafer 10 is greater than the heating temperature of the heating unit located below the outer region of the wafer 10.

[0112] Because the outer area of ​​the wafer is in contact with the substrate, and the substrate is made of rubber, which has good heat absorption, while the inner area of ​​the wafer that is not in contact with the substrate conducts heat through the air, its heat absorption is somewhat worse than that of rubber. Therefore, the heating temperature below the area of ​​the wafer in contact with the substrate is lower than the heating temperature below the inner area of ​​the wafer that is not in contact with the substrate. This allows the overall temperature of the wafer to reach a balance, the wafer surface to be heated more evenly, and reduces the possibility of warping or damage to the wafer due to temperature imbalance.

[0113] In one embodiment, the wafer 10 rotates at a speed of 100–300 rpm / min. Within this range, the possibility of the wafer 10 bending upwards is better reduced, while avoiding downward bending due to excessive rotation speed.

[0114] In one embodiment, the heating device 30 is further configured to maintain the first temperature for a fourth predetermined time before controlling the wafer 10 to start rotating; the rapid heat treatment device further includes a driving device (not shown) for moving the wafer toward the heating device during the fourth predetermined time.

[0115] See Figure 3 The fourth predetermined time is t4 in the figure. In one embodiment, the fourth predetermined time t4 ranges from 5 to 20 seconds.

[0116] After the wafer 10 is heated to the first temperature T1, it needs to be heated to a higher temperature. Therefore, the wafer 10 needs to be moved closer to the heating device 30. In this way, when the temperature is raised to a higher temperature, the wafer 10 can be closer to the heating device 30, thereby reducing heat loss and lowering costs.

[0117] In specific operation, the wafer 10 placed on the support platform 20 is moved by moving the support platform 20 toward the heating device 30.

[0118] In one embodiment, the rapid heat treatment apparatus further includes an air intake device 40 for introducing an inert gas during a fourth predetermined time t4 and a first predetermined time t1 while maintaining the first temperature T1.

[0119] The inert gas has a flow rate of 50 to 150 slm, and the inert gas includes at least one of nitrogen, argon, or helium.

[0120] Figure 5 This is a schematic diagram illustrating the downward bending of the wafer in an embodiment of this disclosure. During the fourth predetermined time t4, as the wafer 10 moves towards the heating device 30, the wafer 10 may bend downwards, such as... Figure 5 As shown, the downward bending of the wafer can cause friction between the wafer and the components at the bottom, resulting in wafer damage and reduced component lifespan. Therefore, when the wafer 10 moves toward the heating device 30, an inert gas needs to be introduced to prevent the wafer 10 from bending downward.

[0121] The inert gas can be introduced into the space below the wafer 10 through the gas inlet device 40.

[0122] In one specific embodiment, such as Figure 6 As shown, the heating device 30 includes 15 heating units, which are divided into the first to the fifteenth heating units from the center of the heating device 30 outwards, and are referred to as Z1 to Z15 respectively.

[0123] During the fourth predetermined time t4 and the first predetermined time t1 of maintaining the first temperature T1, the heating power range of the first heating unit Z1 is 400-800W, the heating power range of the second heating unit Z2 to the fourth heating unit Z6 is 1000-1400W, the heating power range of the eighth heating unit Z8 to the twelfth heating unit Z12 is 400-800W, and the heating power range of the thirteenth heating unit Z13 to the fifteenth heating unit Z15 is 0-700W; the heating power range of the seventh heating unit Z7 is different during the fourth predetermined time t4 and the first predetermined time t1, wherein during the fourth predetermined time t4, the heating power range of the seventh heating unit Z7 is 1100-1300W, and during the first predetermined time t1, the heating power range of the seventh heating unit Z7 is 400-800W.

[0124] In one embodiment, the heating device 30 is further configured to: cool the wafer 10 to a fourth temperature after the wafer 10 has maintained the third temperature T3 for a third predetermined time t3; the rotating device is further configured to: stop rotating the wafer 10 after the wafer 10 has cooled to the fourth temperature.

[0125] See Figure 3 The fourth temperature is T4 in the figure. In one embodiment, the fourth temperature T4 is in the range of 350–550°C.

[0126] The rate at which the wafer 10 cools from the third temperature T3 to the fourth temperature T4 is the fourth rate, and the fourth rate ranges from 50 to 100 °C / s.

[0127] During the process of heating wafer 10 to the first temperature T1 and cooling wafer 10 to the fourth temperature T4, wafer 10 was rotated. This helps to reduce the possibility of wafer bending upwards and skipping during the entire rapid heat treatment process by utilizing centrifugal force and the wafer's own gravity.

[0128] The above description is merely a preferred embodiment of this disclosure and is not intended to limit the scope of protection of this disclosure. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A rapid heat treatment method, characterized in that, include: Provide wafers; The wafer is subjected to a first heating step to raise the temperature of the wafer to a first temperature; Control the wafer to start rotating; Maintain the first temperature for a first predetermined time; A second heating step is performed on the wafer to raise the temperature of the wafer from a first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. The wafer is subjected to a third heating step, which raises the temperature of the wafer from the second temperature to the third temperature and maintains the third temperature for a third predetermined time. After the wafer is heated to the first temperature and before the wafer is controlled to start rotating, the method further includes: The first temperature is maintained for a fourth predetermined time, and the wafer is moved toward the heating device during the fourth predetermined time.

2. The method according to claim 1, characterized in that, The wafer rotates at a speed of 100~300 rpm.

3. The method according to claim 1, characterized in that, Also includes: After the wafer is maintained at the third temperature for a third predetermined time, the wafer is cooled to the fourth temperature and the rotation of the wafer is stopped.

4. The method according to claim 1, characterized in that, Also includes: An inert gas is introduced during the fourth predetermined time and the first predetermined time period of maintaining the first temperature.

5. The method according to claim 4, characterized in that, The inert gas has a flow rate of 50-150 slm, and the inert gas includes at least one of nitrogen, argon, or helium.

6. The method according to claim 1, characterized in that, The first temperature ranges from 150 to 200°C, the second temperature ranges from 450 to 650°C, and the third temperature ranges from 800 to 1100°C.

7. The method according to claim 1, characterized in that, The wafer provision includes placing the wafer on a support platform, the support platform being annular in shape, the wafer including an outer region and an inner region, the outer region being in contact with the support platform, and the inner region being exposed from the middle portion of the annular support platform; Heating is performed using a heating device located below the support platform. The heating device includes multiple heating units, wherein the heating unit located below the inner region of the wafer has a higher heating temperature than the heating unit located below the outer region of the wafer.

8. The method according to claim 1, characterized in that, The first predetermined time is 5~20s; the second predetermined time is 10~20s; and the third predetermined time is 5~60s.

9. The method according to claim 1, characterized in that, The heating rate at which the wafer is heated to a first temperature is called the first rate; the heating rate at which the wafer is heated from the first temperature to a second temperature is called the second rate; and the heating rate at which the wafer is heated from the second temperature to a third temperature is called the third rate; wherein the first rate, the second rate, and the third rate exhibit an increasing trend.

10. The method according to claim 9, characterized in that, The first rate ranges from 15 to 30°C / s, the second rate ranges from 40 to 80°C / s, and the third rate ranges from 100 to 250°C / s.

11. A rapid heat treatment apparatus, characterized in that, include: A support platform for placing wafers; A heating device is located under the support platform; the heating device is used to perform a first heating step on the wafer, raising the wafer to a first temperature and maintaining the first temperature for a first predetermined time; to perform a second heating step on the wafer, raising the wafer from the first temperature to a second temperature and maintaining the second temperature for a second predetermined time; and to perform a third heating step on the wafer, raising the wafer from the second temperature to a third temperature and maintaining the third temperature for a third predetermined time. The heating device is further configured to maintain the first temperature for a fourth predetermined time before controlling the wafer to start rotating; A rotating device is used to control the wafer to start rotating after the wafer is heated to a first temperature and maintained at the first temperature for a fourth predetermined time. The device further includes a driving device for moving the wafer toward the heating device during the fourth predetermined time period.

12. The apparatus according to claim 11, characterized in that, Also includes: An air intake device is used to introduce inert gas during a fourth predetermined time and a first predetermined time period while maintaining the first temperature.

13. The apparatus according to claim 11, characterized in that, The support platform is circular in shape, and the wafer includes an outer region and an inner region. The outer region is in contact with the support platform, and the inner region is exposed from the middle part of the circular support platform. The heating device is located below the support platform and includes multiple heating units, wherein the heating unit located below the inner region of the wafer has a higher heating temperature than the heating unit located below the outer region of the wafer.

14. The apparatus according to claim 12, characterized in that, The heating device is further configured to: cool the wafer to a fourth temperature after the wafer has maintained the third temperature for a third predetermined time; The rotating device is also configured to stop rotating the wafer after the wafer has cooled to a fourth temperature.

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