Manipulation regions for qubits in quantum dots

Abstract

The invention relates to an electronic component (10) formed from a semiconductor component or a semi-conductor-like structure having a gate electrode assembly (16, 18, 40) for manipulating quantum states of a quantum bit in a quantum dot (52, 54), the electronic component comprising a substrate (12) having a two-dimensional electron gas or electron hole gas. An electrical contact connects the gate electrode assembly (16, 18, 40) with a voltage source. A first gate electrode assembly (16) having gate electrodes (20, 22, 24, 26) is arranged on a face (14) of the electronic component (10) to generate moveable potential wells (56, 58) in the substrate (12). A second gate electrode assembly (40) is used to generate a potential barrier adjacent to the first gate electrode assembly (16). The gate electrode assemblies (16, 18, 40) have electrode fingers (28, 30, 32, 34) running in parallel, wherein the electrode fingers (28, 30, 32, 34) of the first gate electrode assembly (16) are periodically alternately connected to each other to cause a nearly continuous movement of the potential wells (56, 58) through the substrate (12).

Description

Technical Field

[0001] This invention relates to an electronic component formed of a semiconductor component or semiconductor-like structure having a gate electrode assembly for manipulating the quantum states of qubits in a quantum dot, including... a) A substrate containing two-dimensional electron gas or electron-hole gas; b) Electrical contacts for connecting the grid motor assembly to a voltage source; c) A first gate electrode assembly with a gate electrode, disposed at the face of the electronic component, for generating a movable potential well in the substrate. d) A second gate electrode assembly for generating a potential barrier, which is adjacent to the first gate electrode assembly; e) The gate electrode assembly has parallel-extending electrode fingers, wherein f) The electrode fingers of the first gate electrode are periodically and alternately connected to each other, which causes the potential well to move almost continuously through the substrate.

[0002] Furthermore, the present invention relates to a method for such electronic components. Background Technology

[0003] Traditional computers operate using semiconductor components with integrated circuits. These circuits always function in a system based on logic "0" or "1" (i.e., switching "on" or "off"). In the case of semiconductor memory, this is achieved by having a potential that is either above or below a threshold. These two states constitute the smallest unit in a computer and are called a "bit".

[0004] These semiconductor components are typically composed of doped silicon to realize circuits. For example, transistor circuits can be arranged in such semiconductor components and interconnected to form logic circuits. Thanks to continuously improving chemical and physical manufacturing processes, these semiconductor components have been able to be produced with increasingly extreme compactness. However, this compactness is reaching its physical limits. Circuit density and temperature often cause problems in such semiconductor components. Therefore, optimization can be achieved, in particular, through more layered models, higher switching cycles, or the selection of semiconductor materials. However, for many applications, such as in cryptography or calculating weather or climate models, computational power is often insufficient due to the massive amounts of data.

[0005] Models for so-called quantum computers, designed to significantly enhance computing power, have long been known. However, technically, quantum computers have not yet been realized for various reasons. The model of a quantum computer is set up using the quantum mechanical states of particles (such as electrons). Here, a quantum mechanical system with two states as the smallest unit for storing information is called a "qubit." A qubit is defined, for example, by its quantum mechanical states of "up" and "down."

[0006] Regardless of the material system chosen, the principle of electron spin qubits remains the same. Here, a semiconductor heterostructure is used as the substrate. A semiconductor heterostructure comprises a two-dimensional electron gas (2DEG). A semiconductor heterostructure consists of single-crystal semiconductor layers with different compositions grown on top of each other. These layer structures offer numerous technology-dependent quantization effects in their electronic and optical properties. Therefore, they are particularly suitable for the fabrication of microelectronic components. Currently, the most important material combination used for fabricating semiconductor heterostructures is the GaAs / AlGaAs system.

[0007] In this semiconductor heterostructure, a so-called quantum thin film is formed at the interface of different materials. The quantum thin film arises specifically from the different energy ratios in the two materials. This predetermined energy distribution causes charge carriers from the surrounding environment to accumulate in the quantum thin film. There, the charge carriers are largely confined to the layer in terms of their degrees of freedom of motion, forming a two-dimensional electron gas (2DEG).

[0008] Nanomaterial structures are called quantum dots. Semiconductor materials are particularly well-suited for this purpose. The charge carriers (not only electrons but also holes) are so restricted in their mobility within a quantum dot that their energy can no longer have a continuous value, but only a discrete one. A potential landscape within a two-dimensional electron gas (2DEG) is formed by applying nanoscale gate electrodes (so-called grids) to the surface of the dot, thereby trapping individual electrons within the quantum dot. The spin of these electrons then serves as the basis for forming logic qubits.

[0009] With the aid of an external magnetic field, electronic states can be split about their spin (Zeeman effect) and thus can be treated individually. The spins of these electrons are then used as the basis for eigenstates to form logical qubits. Furthermore, a superposition of these two eigenstates can also be realized due to quantum mechanical effects.

[0010] Methods for manipulating individual qubits via electron spin resonance (ESR) or electron dipole spin resonance (EDSR) are known. Operations on two qubits via exchanging interactions are also known.

[0011] A quantum dot device is known from US2017 / 0317203A1, comprising at least three conductive layers and at least two insulating layers. Here, the three conductive layers are electrically insulated from each other. It is described there that one conductive layer is composed of a material different from the corresponding two conductive layers. For example, the conductive layer may be composed entirely and / or partially of aluminum, gold, copper, or polycrystalline silicon. The insulating layers are, for example, composed of silicon oxide, silicon nitride, and / or aluminum oxide. Here, the connection between the conductive and insulating layers particularly causes: the passage of a single electron through the quantum dot of the device when a voltage pulse is applied.

[0012] In this quantum dot device, electrons are quasi-trapped in a potential well. Here, electrons move from one quantum dot to another via quantum mechanical tunneling. When electrons travel long distances, this can lead to inaccurate or distorted information about their quantum mechanical state.

[0013] WO2017 / 020095A1 discloses a scalable architecture for processing devices to perform quantum processing. This architecture is based on all-silicon CMOS fabrication technology. Transistor-based control circuitry is used with potential-free gates to operate a two-dimensional qubit array. A qubit is defined by the spin state of a single electron contained within a quantum dot. A higher level is described here, namely how individual qubits can be electrically manipulated, for example, via transistors, including qubit manipulation and readout. Although a “scalable architecture” is discussed, the array shown does not allow for any real expansion, i.e., particularly the integration of cryogenic electronics, because space cannot be created between the qubits.

[0014] US8,164,082B2 describes a spin-bus quantum computer architecture comprising a spin bus consisting of multiple strongly coupled qubits, always qubit-based, defining a spin qubit chain. A large number of information-carrying qubits are arranged adjacent to the qubits of the spin bus. Electrodes are formed at the information-carrying qubits and the spin bus qubits to control the establishment and disconnection of coupling between the qubits, thereby controlling the establishment and disconnection of coupling between each information-carrying qubit and its adjacent spin bus qubits. The spin-bus architecture enables fast and reliable coupling of qubits over long distances.

[0015] EP3016035B1 describes a processing device and a method for operating the processing device. In particular, but not exclusively, the invention relates to a quantum processing device that can be controlled to perform adiabatic quantum computing.

[0016] To this end, a quantum processor has the following characteristics: multiple qubits and a control structure with multiple control elements, wherein each control element is arranged to control multiple qubits. The control structure is controllable to perform quantum computation using qubits, wherein the quantum state of a qubit is encoded in the nuclear spin or electron spin of one or more donor atoms. The donor atoms are arranged in a plane embedded in a semiconductor structure. Here, the first set of donor atoms is arranged such that it is used to encode quantum information related to quantum computation.

[0017] The donor atoms of the second set are arranged such that they achieve electromagnetic coupling between one or more donor atoms in the first set. The donor atoms of the first set are arranged in a two-dimensional matrix structure. Multiple control members have elongated control members of the first set, arranged in a first plane above the plane containing the donor atoms. Elongated control members of the second set are provided, arranged in a second plane below the plane containing the donor atoms.

[0018] To realize a universal quantum computer, qubits must be coupled at a distance of at least a few micrometers to provide space, especially for local control electronics. Structures and structural elements must be provided to transport quantum dots to different destinations in order to establish logic circuits. Several methods exist in the prior art in which one-dimensional or two-dimensional arrays are composed of individual quantum dots, through which electrons can then be transported. However, this method is impractical, or even impossible, to achieve coupling at a few micrometers without significant cost, due to the need for a very large number of gate electrodes and the voltages required.

[0019] Operations on a single qubit can already be controlled and evaluated to a satisfactory degree, but the coupling of qubits is a problem that remains unsolved in order to achieve complex logical connections that could enable a general-purpose quantum computer. Summary of the Invention

[0020] Therefore, the objective of this invention is to overcome the shortcomings of the prior art and create an electronic component that allows the implementation of logic circuits using quantum dots, wherein the quantum dots should accommodate defined quantum mechanical states.

[0021] According to the present invention, this task is solved in electronic components of the type mentioned at the beginning by means of the following solution, wherein... g) A manipulator is provided that deflects a qubit into a definable quantum state in a manipulation region, wherein the manipulation region is disposed in an adjacent region and is formed by first and second gate electrode assemblies.

[0022] This task is further solved by a method for such electronic components, in which one or more quantum dots can be moved into and out of the manipulation region by means of a first or third gate electrode assembly.

[0023] In principle, qubits are realized through electron spin. This invention further utilizes the following method: a quantum mechanical state is set in the quantum dot by a manipulator in the manipulation region. This thus definable quantum mechanical state can be translated over a relatively long distance by the substrate. For this purpose, the quantum dot is quasi-trapped in a potential well, which is generated in a suitable manner by a gate electrode assembly. The potential well then moves continuously and directionally across the substrate, causing the quantum dot to move over distances with its quantum mechanical state. For the continuous movement of the potential well, the electrode fingers of the gate electrode are interconnected accordingly. The movable potential well quantum dot is transported to a static potential well in the manipulation region.

[0024] In an advantageous design of the electronic component according to the invention, the manipulator includes a device for activating a magnetic field in the region of the manipulation area for manipulating qubits. The magnetic field is used in relation to the spin-splitting electron states. Thus, these new eigenstates can serve as the basis for forming logical qubits.

[0025] In another advantageous embodiment of the electronic component according to the invention, the manipulator includes means for generating an oscillating magnetic field or a gradient magnetic field in the manipulator region. The electron is situated in an in-plane magnetic field gradient, wherein the magnetic field gradient is used to controllably switch between eigenstates that split after spin.

[0026] A preferred design of the electronic component according to the invention involves a manipulator comprising a microwave generator that injects microwaves into the manipulation region to manipulate the quantum dot. This allows the quantum dot to remain in motion within the manipulation region until a desired quantum state is achieved. For example, microwaves are irradiated through a gate electrode. These microwaves distort the potential in a controlled manner, causing electrons to begin oscillating in a controlled manner within the magnetic field. Spin-orbit coupling now enables switching between two spin states.

[0027] A particular variation of the electronic component according to the invention further comprises a manipulator including a third gate electrode assembly having a gate electrode for translating quantum dots by means of a potential well, which is arranged adjacent to the surface of the electronic component and adjacent to the manipulation region. Thus, two quantum dots can be simultaneously translated into the manipulation region.

[0028] Another design of the electronic component according to the invention is achieved by additionally providing a fourth gate electrode assembly in the region of the manipulation area for generating an additional potential barrier that can be turned on. This measure allows the generation of another static potential well. Thus, for example, a double potential well emerges, which is particularly suitable for manipulating the quantum states of qubits in a quantum dot via exchange interactions, or the quantum states of two qubits in a quantum dot.

[0029] In a preferred design of the electronic component, the gate electrode assembly consists of two parallel gate electrodes forming a channel-like structure. This design ensures that the potential well can only move along specific tracks within the substrate.

[0030] In advantageous designs of such electronic components, the substrate comprises gallium arsenide (GaAs) and / or silicon germanium (SiGe). These materials are capable of generating a two-dimensional electron gas in which quantum dots can be generated and moved. In the case of gallium arsenide, the quantum dots are occupied by electrons. In the case of silicon germanium, the quantum dots are occupied by holes lacking electrons.

[0031] Another preferred construction of the electronic component can be achieved by configuring interconnected gate electrodes to be periodically and / or phase-shiftedly applied with voltage. This allows the potential well to be continuously guided through the substrate. Therefore, a quantum dot located in the potential well can be translated across the substrate by means of the potential well. Here, the quantum dot does not lose its original quantum mechanical state.

[0032] A preferred design for the electronic component is that the corresponding gate electrodes are interconnected at least every third electrode finger. This ensures that the potential well is always guaranteed to move within at least one cycle. Only in this way can the continuous movement of the potential well along with the quantum dot be achieved. In principle, other combinations are possible when the gate electrodes are interconnected, as long as the movement of the potential well and the quantum dot together can be performed. Accordingly, an advantageous design for the method of the electronic component according to the invention is obtained by the following: the corresponding electrodes are interconnected at least every third electrode finger and periodically subjected to a voltage.

[0033] Another advantageous design of the electronic component according to the invention is that it includes a device for connecting two qubits of a quantum computer. The states of a quantum dot translated over a greater distance are particularly suitable in the case of a quantum computer. Here, it is appropriate to interconnect the qubits. Therefore, the electronic component must have the contact possibility to interconnect at least two qubits in order to transfer the quantum state of a quantum dot from one qubit to another.

[0034] Other designs and advantages arise from the subject matter of the dependent claims and the accompanying drawings, together with the related description. Embodiments are explained in more detail below with reference to the accompanying drawings. The invention should not be limited to the embodiments listed. The invention should be understood in relation to all objects that will be apparent to those skilled in the art now and in the future for carrying out the invention. The following detailed description relates to the presently best possible implementation of this disclosure. These embodiments are provided only to illustrate the invention in more detail. Therefore, the description should not be construed in a limiting sense, but is merely used to illustrate the general principles of the invention, and thus the scope of the invention is preferably defined by the appended claims. The prior art referenced herein is considered part of the disclosure relating to this invention. Attached Figure Description

[0035] Figure 1 An embodiment of an electronic component according to the invention is shown in a schematic top view, the electronic component having a gate assembly for manipulating the quantum states of quantum dots or charge carriers.

[0036] Figure 2 The schematic diagram illustrates the manipulation process in a modified manipulation region of a gate electrode assembly with two movable potential wells arranged on both sides for single-qubit operation.

[0037] Figure 3 The schematic diagram illustrates the manipulation process in a modified manipulation region with a gate electrode assembly for movable potential wells arranged on one side, used for single-qubit operation.

[0038] Figure 4 The manipulation process in the operating region of the variant used for two-qubit operations is illustrated in a schematic diagram. Detailed Implementation

[0039] exist Figure 1 The diagram illustrates a first embodiment of an electronic component 10 according to the invention, which is formed from a semiconductor heterostructure. The structure of the component is preferably at the nanoscale. Undoped silicon germanium (SiGe) is used as the substrate 12 for the electronic component 10. The electronic component 10 is designed such that it comprises a two-dimensional electron gas (2DEG). Gate electrode assemblies 16 and 18 are disposed on surface 14 of the substrate 12.

[0040] Gate electrode assemblies 16, 18 each have two gate electrodes 20, 22, 24, 26. Each gate electrode is electrically isolated from the others in a suitable manner by means of an insulating layer 27. Gate electrode assemblies 16, 18, 40 are thus layered, with an insulating layer 27 disposed between each gate electrode 20, 22, 24, 26 of the gate electrode assemblies 16, 18, 40. Gate electrodes 20, 22, 24, 26 also include electrode fingers 28, 30, 32, 34 arranged parallel to each other on the surface 14 of the substrate 12.

[0041] In adjacent region 36, where gate electrode assemblies 16, 18 are connected, a manipulation region 38 is constructed. Within manipulation region 38, a manipulator 39 is present, which includes another gate electrode assembly 40. Gate electrode assembly 40 includes gate electrodes 42, 44, 46, which construct at least one static potential well. Gate electrode assembly 40 further includes pump gate electrodes 48, 50, which can place each of a quantum dot or charge carrier into motion or vibration.

[0042] Appropriate voltages are supplied to the gate electrode assemblies 16, 18, 40 via electrical connections. Potential wells are generated in the substrate 12 by appropriately applying sinusoidally oriented voltages to the gate electrodes 20, 22, 24, 26 of the gate electrode assemblies 16, 18. Quantum dots or charge carriers trapped in these potential wells can be translated across the substrate. By appropriately manipulating the electrode fingers 28, 30, 32, 34 using sinusoidal voltages, the potential wells are longitudinally translated across the substrate. Quantum dots or charge carriers quasi-trapped in such potential wells can be translated a considerable distance within the two-dimensional electron gas of the SiGe substrate 12 without undergoing quantum mechanical state changes.

[0043] Figure 2 A schematic diagram illustrates the manipulation of quantum dots or charge carriers 52, 54 within the operating region 38 for single-qubit operation. The diagram shows a cross-section of the electronic component 10, so that only the electrode fingers 28, 30, 32, 34, the barrier gate electrodes 42, 44, 46, and the pump gate electrodes 48, 50 are visible in the cross-section. Below this, to illustrate the function, the sequence A to F showing the orientation of potential wells 56, 58, 60 in the substrate 12 is shown. The electrode fingers 28, 30, 32, 34 of the gate electrode assemblies 16, 18 construct potential wells 56 and 58 that can move through the substrate 12. The movement of potential wells 56, 58 occurs here through the appropriate interconnection of the electrode fingers 28, 30, 32, 34. The electrode fingers 28, 30, 32, 34 of the gate electrode assemblies 16, 18 are periodically alternately connected to each other, causing potential wells 56, 58 to move almost continuously through the substrate 12.

[0044] A static double potential well 60 is constructed in the operating region 38. The static double potential well 60 is generated by barrier gate electrodes 42, 44, and 46. First, a quantum dot 54 is introduced into the static double potential well 60 in the operating region 38 by means of a movable potential well 58. The quantum dot 54 can have a defined quantum mechanical state by means of a manipulator 39, such as a gradient magnetic field. Another quantum dot 52 waits outside the operating region 38. The defined quantum state of the quantum dot 54 is achieved by movement in the magnetic field gradient of the manipulator 39. It is now possible for the quantum dot 54 to have a defined quantum state by delocalization (E) in the double potential well or by rapid back-and-forth movement (F) in the magnetic field gradient. The quantum dots 52 and 54, which are guided away from the operating region 38, obtain the thus defined quantum mechanical state.

[0045] Figure 3 A schematic diagram illustrates the manipulation of a quantum dot or charge carrier 54 within the operating region 38 for single-qubit operation. The diagram shows a cross-section of the electronic component 10, so that only the electrode fingers 32, 34, the barrier gate electrodes 42, 44, 46, and the pump gate electrodes 48, 50 are visible in the cross-section. Below this, to illustrate the function, a sequence A to F shows the orientation of potential wells 58, 60 in the substrate 12. The electrode fingers 32, 34 of the gate electrode assembly 18 construct a potential well 58 that can move through the substrate 12. The movement of the potential well 58 occurs here through the appropriate interconnection of the electrode fingers 32, 34. The electrode fingers 32, 34 of the gate electrode assembly 18 are periodically and alternately connected to each other for this purpose, which causes the potential well 58 to move almost continuously through the substrate 12.

[0046] A static double potential well 60 is constructed in the operating region 38. The static double potential well 60 is generated by barrier gate electrodes 42, 44, and 46. A quantum dot 54 is introduced into the static double potential well 60 in the operating region 38 by means of a movable potential well 58. The quantum dot 54 can have a defined quantum mechanical state by means of a manipulator 39, such as a gradient magnetic field. The defined quantum state of the quantum dot 54 is achieved by movement in the magnetic field gradient of the manipulator 39. It is now possible for the quantum dot 54 to have a defined quantum state by delocalization (E) in the double potential well or by rapid back-and-forth movement (F) in the magnetic field gradient. The quantum dot 54, which is guided away from the operating region 38, obtains the thus defined quantum mechanical state.

[0047] Figure 4A schematic diagram illustrates the manipulation process in operating region 38 of another variant used for two-qubit operations. The diagram shows a cross-section of electronic component 10, so that only electrode fingers 28, 30, 32, 34, barrier gate electrodes 42, 44, 46, and pump gate electrodes 48, 50 are visible in the cross-section. Below this, to illustrate the function, the sequence A to E showing the orientation of potential wells 56, 58, 60 in substrate 12 is shown. Electrode fingers 28, 30, 32, 34 of gate electrode assemblies 16, 18 construct potential wells 56 and 58 that can move through substrate 12. The movement of potential wells 56, 58 occurs here through the appropriate interconnection of electrode fingers 28, 30, 32, 34. The electrode fingers 28, 30, 32, 34 of gate electrode assemblies 16, 18 are periodically alternately connected to each other, which causes potential wells 56, 58 to move almost continuously through substrate 12.

[0048] A static double potential well 60 is constructed in the operating region 38. The static double potential well 60 is also generated here by barrier gate electrodes 42, 44, and 46. Quantum dots 52 and 54 are translated to the static double potential well 60 in the operating region 38 and introduced into the double potential well 60 by means of movable potential wells 56 and 58. Quantum dots 52 and 54 can have defined quantum mechanical states by means of a manipulator 39, such as a gradient magnetic field. Two-qubit operations can be performed between quantum dots 52 and 54 by exchanging interactions 64. The quantum dots 52 and 54, which are moved away from the operating region 38, obtain the thus defined quantum mechanical states.

[0049] List of reference numerals 10 electronic components 12 base 14 sides 16-gate electrode assembly 18-gate electrode assembly 20 gate electrodes 22 gate electrodes 24 gate electrodes 26 gate electrodes 27 insulation layers 28 electrode fingers 30 electrode fingers 32 electrode fingers 34 electrode fingers 36 adjacent areas 38 control area 39 manipulator 40-gate electrode assembly 42 Barrier Gate Electrode 44 Barrier Gate Electrode 46 barrier gate electrode 48 pump grid electrodes 50 pump grid electrode 52 quantum dots 54 quantum dots 56 Potential wells that can move 58 Potential wells that can move 60 static double well 62 horizontal arrows 64. Horizontal double arrow.

Claims

1. An electronic component (10) formed of a semiconductor component or semiconductor-like structure having gate electrode assemblies (16, 18, 40) for manipulating the quantum state of qubits in quantum dots (52, 54), the electronic component comprising: a) A substrate having a two-dimensional electron gas or electron hole gas (12); b) Electrical contacts for connecting the gate electrode assembly (16, 18, 40) to a voltage source; c) A first gate electrode assembly (16) having gate electrodes (20, 22, 24, 26) arranged on the surface (14) of the electronic component (10) to generate a movable potential well (56, 58) in the substrate (12). d) A second gate electrode assembly (40) for generating a potential barrier adjacent to the first gate electrode assembly (16), e) The gate electrode assembly (16, 18, 40) has parallel extending electrode fingers (28, 30, 32, 34), wherein f) The electrode fingers (28, 30, 32, 34) of the first gate electrode assembly (16) are periodically and alternately connected to each other, which causes the potential wells (56, 58) to move almost continuously through the substrate (12), wherein the quantum dots trapped in the potential wells (56, 58) are able to translate together with the potential wells (56, 58) in the substrate (12) without changing the quantum state of the qubits of the quantum dots. Its features are, g) A manipulator (39) is provided to shift the qubits of the quantum dot to a definable quantum state in a manipulation region (38), wherein the manipulation region (38) is disposed in an adjacent region (36) formed by first and second gate electrode assemblies (16, 40).

2. The electronic component (10) according to claim 1, characterized in that, The manipulator (39) includes a device for generating an oscillating magnetic field or additionally a gradient magnetic field in the manipulator region (38).

3. The electronic component (10) according to claim 1 or 2, characterized in that, The manipulator (39) includes a microwave generator that injects microwaves into the manipulation region (38) to manipulate the quantum state of the quantum dots (52, 54).

4. The electronic component (10) according to claim 1 or 2, characterized in that, The manipulator (39) includes a third gate electrode assembly (18) with gate electrodes (22, 24) for translating quantum dots (52) by means of a potential well (56), the third gate electrode assembly being arranged adjacent to the surface (14) of the electronic component (10) and adjacent to the manipulation region (38).

5. The electronic component (10) according to claim 4, characterized in that, The third gate electrode assembly (18) has a fourth gate electrode assembly in the region adjacent to the manipulation region (38) for generating an additional barrier that can be turned on.

6. The electronic component (10) according to claim 1 or 2, characterized in that, The first gate electrode assembly (16) consists of two parallel gate electrodes forming a channel-like structure.

7. The electronic component (10) according to claim 4, characterized in that, The third gate electrode assembly (18) consists of two parallel gate electrodes forming a channel-like structure.

8. The electronic component (10) according to claim 1 or 2, characterized in that, The substrate of the electronic component comprises gallium arsenide (GaAs) and / or silicon germanium (SiGe).

9. The electronic component (10) according to claim 1 or 2, characterized in that, The gate electrodes (20, 22, 24, 26) that are connected to each other are configured to be subjected to voltage periodically and / or in a phase-shifted manner.

10. The electronic component (10) according to claim 1 or 2, characterized in that, The third electrode of each of the gate electrodes (20,22,24,26) is connected to each other (28,30,32,34).

11. The electronic component (10) according to claim 1 or 2, characterized in that, It is equipped with a device for connecting one and / or two qubits to the quantum computer.

12. A system comprising an electronic component (10) according to any one of claims 1 to 3 and a device for enabling a magnetic field for splitting quantum mechanical states in the quantum dots (52, 54).

13. A method for manipulating the quantum state of a qubit in a quantum dot by means of an electronic component (10) according to claim 4, characterized in that, The quantum dot (52) or the quantum dot (52, 54) can move into and out of the manipulation region (38) by means of the first or third gate electrode assembly (16, 18).

14. A method for manipulating the quantum state of a qubit in a quantum dot by means of an electronic component (10) according to claim 9, characterized in that, The quantum dot (52) or the quantum dots (52, 54) move into the manipulation region (38) to exchange interactions.

15. A method for manipulating the quantum state of a qubit in a quantum dot by means of an electronic component according to claim 2, characterized in that, The quantum dots (52, 54) are positioned within the gradient magnetic field to manipulate the qubits to reciprocate within the manipulation region (38).

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