Component for reading the state of a qubit in a quantum dot

Abstract

The invention relates to an electronic component (10) for reading quantum states of qubits in quantum dots (42), which is composed of a semiconductor component or a semiconducting structure with a gate electrode assembly (16, 18). The electronic component comprises a substrate (12) with a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assembly (16, 18) with a voltage source. The gate electrode assembly (16, 18) has a gate electrode (20, 22, 30, 32, 34, 38, 40), which is arranged at a face (14) of the electronic component (10) for generating a potential well (46, 48, 62, 64, 66) in the substrate (12). Furthermore, the invention relates to a method for such an electronic component (10).

Description

Technical Field

[0001] This invention relates to an electronic component for reading the quantum state of qubits in a quantum dot, comprising a semiconductor component or a semiconductor-like structure with a gate electrode assembly, including... a) A substrate containing two-dimensional electron gas or electron hole gas; b) Electrical contacts used to connect the gate electrode assembly to the voltage source; c) A gate electrode assembly with a gate electrode, the gate electrode assembly being arranged at the face of the electronic component for creating a potential well in the substrate. d) The gate electrode of the gate electrode assembly has parallel-extending electrode fingers, wherein, i. In the case of the first gate electrode assembly, the electrode fingers are periodically and alternately connected together, causing the potential well to move almost continuously across the substrate, wherein the first quantum dot is translated together with the potential well, and ii. The electrode fingers of the second gate electrode assembly form a static potential well in which charge carriers with known quantum mechanical states are disposed.

[0002] Furthermore, the present invention relates to a method for such electronic components. Background Technology

[0003] Traditional computers operate using semiconductor components with integrated circuits. These circuits always function in a system based on logic "0" or "1" (i.e., switching "on" or "off"). In the case of semiconductor memory, this is achieved by having a potential that is either above or below a threshold. These two states constitute the smallest unit in a computer and are called a "bit".

[0004] These semiconductor components are typically composed of doped silicon to realize circuits. For example, transistor circuits can be arranged in such semiconductor components and interconnected to form logic circuits. Thanks to continuously improving chemical and physical manufacturing processes, these semiconductor components have been able to be produced with increasingly extreme compactness. However, this compactness is reaching its physical limits. Circuit density and temperature often cause problems in such semiconductor components. Therefore, optimization can be achieved, in particular, through more layered models, higher switching cycles, or the selection of semiconductor materials. However, for many applications, such as in cryptography or calculating weather or climate models, computational power is often insufficient due to the massive amounts of data.

[0005] Models for so-called quantum computers, designed to significantly enhance computing power, have long been known. However, technically, quantum computers have not yet been realized for various reasons. The model of a quantum computer is set up using the quantum mechanical states of particles (such as electrons). Here, a quantum mechanical system with two states as the smallest unit for storing information is called a "qubit." A qubit is defined, for example, by its quantum mechanical states of "up" and "down."

[0006] Regardless of the material system chosen, the principle of electron spin qubits remains the same. Here, a semiconductor heterostructure is used as the substrate. A semiconductor heterostructure comprises a two-dimensional electron gas (2DEG). A semiconductor heterostructure consists of single-crystal semiconductor layers with different compositions grown on top of each other. These layer structures offer numerous technology-dependent quantization effects in their electronic and optical properties. Therefore, they are particularly suitable for the fabrication of microelectronic components. Currently, the most important material combination used for fabricating semiconductor heterostructures is the GaAs / AlGaAs system.

[0007] In this semiconductor heterostructure, a so-called quantum thin film is formed at the interface of different materials. The quantum thin film arises specifically from the different energy ratios in the two materials. This predetermined energy distribution causes charge carriers from the surrounding environment to accumulate in the quantum thin film. There, the charge carriers are largely confined to the layer in terms of their degrees of freedom of motion, forming a two-dimensional electron gas (2DEG).

[0008] Nanomaterial structures are called quantum dots. Semiconductor materials are particularly well-suited for this purpose. Charge carriers (not only electrons but also holes) are so restricted in their mobility within a quantum dot that their energy can no longer have continuous values, but only discrete values. A potential landscape within a two-dimensional electron gas (2DEG) is formed by applying nanoscale gate electrodes (so-called grids) to the surface of the dot, thereby trapping individual electrons within the quantum dot. With the aid of an external magnetic field, electronic states can be split about their spin states (Zeeman effect) and thus can be handled individually. The spins of these electrons are then used as the basis for eigenstates to form logical qubits. Furthermore, a superposition of these two eigenstates can also be realized due to quantum mechanical effects.

[0009] A quantum dot device is known from US2017 / 0317203A1, comprising at least three conductive layers and at least two insulating layers. Here, the three conductive layers are electrically insulated from each other. It is described there that one conductive layer is composed of a material different from the corresponding two conductive layers. For example, the conductive layer may be composed entirely and / or partially of aluminum, gold, copper, or polycrystalline silicon. The insulating layers are, for example, composed of silicon oxide, silicon nitride, and / or aluminum oxide. Here, the connection between the conductive and insulating layers particularly causes: the passage of a single electron through the quantum dot of the device when a voltage pulse is applied.

[0010] In this quantum dot device, electrons are quasi-trapped in a potential well. Here, electrons move from one quantum dot to another via quantum mechanical tunneling. When electrons travel over long distances, this can lead to inaccurate or distorted information about their quantum mechanical state.

[0011] WO2017 / 020095A1 discloses a scalable architecture for processing devices to perform quantum processing. This architecture is based on all-silicon CMOS fabrication technology. Transistor-based control circuitry is used with potential-free gates to operate a two-dimensional qubit array. A qubit is defined by the spin state of a single electron contained within a quantum dot. A higher level is described here, namely how individual qubits can be electrically manipulated, for example, via transistors, including qubit manipulation and readout. Although a “scalable architecture” is discussed, the array shown does not allow for any real expansion, i.e., particularly the integration of cryogenic electronics, because space cannot be created between the qubits.

[0012] US8,164,082B2 describes a spin-bus quantum computer architecture comprising a spin bus consisting of multiple strongly coupled qubits, always qubit-based, defining a spin qubit chain. A large number of information-carrying qubits are arranged adjacent to the qubits of the spin bus. Electrodes are formed at the information-carrying qubits and the spin bus qubits to control the establishment and disconnection of coupling between the qubits, thereby controlling the establishment and disconnection of coupling between each information-carrying qubit and its adjacent spin bus qubits. The spin-bus architecture enables fast and reliable coupling of qubits over long distances.

[0013] EP3016035B1 describes a processing device and a method for operating the processing device. In particular, but not exclusively, the invention relates to a quantum processing device that can be controlled to perform adiabatic quantum computing.

[0014] To this end, the quantum processor has the following characteristics: multiple qubits and a control structure with multiple control members, wherein each control member is arranged to control multiple qubits. The control structure is controllable to perform quantum computing using qubits, wherein the quantum state of a qubit is encoded in the nuclear spin or electron spin of one or more donor atoms. The donor atoms are arranged in a plane embedded in a semiconductor structure. Here, a first set of donor atoms is arranged to encode quantum information related to quantum computing. A second set of donor atoms is arranged such that the second set of donor atoms achieves electromagnetic coupling between one or more donor atoms in the first set. The first set of donor atoms is arranged in a two-dimensional matrix structure. The multiple control members have elongated control members of the first set, arranged in a first plane above the plane containing the donor atoms. A second set of elongated control members is provided, arranged in a second plane below the plane containing the donor atoms.

[0015] To realize a universal quantum computer, qubits must be coupled at a distance of at least a few micrometers to provide space, especially for local control electronics. Structures and structural elements must be provided to transport quantum dots to different destinations in order to establish logic circuits. Several methods exist in the prior art in which one-dimensional or two-dimensional arrays are composed of individual quantum dots, through which electrons can then be transported. However, this method is impractical, or even impossible, to achieve coupling at a few micrometers without significant cost, due to the need for a very large number of gate electrodes and the voltages required.

[0016] Operations on a single qubit can already be controlled and evaluated to a satisfactory degree, but coupling qubits may be a core unsolved problem in order to enable complex logic circuits, which in turn could enable a universal quantum computer. Summary of the Invention

[0017] Therefore, the object of the present invention is to eliminate the disadvantages of the prior art and to create an electronic component that can realize a logic circuit with quantum dots, wherein the quantum mechanical state should be determined.

[0018] According to the invention, this objective is thus achieved, namely, in the case of an electronic component for reading the quantum state of a quantum dot of the previously mentioned form, wherein... e) A sensor element is provided to detect changes in charge, the sensor element detects the charge in the static potential well, wherein the first quantum dot is translated to the second quantum dot.

[0019] Furthermore, this objective is achieved by a method for such electronic components, comprising the following steps: a) Introduce the first quantum dot into the static potential well; b) Initialize the charge of the first quantum dot; c) Detecting the charge of the first quantum dot using a sensor element; d) Introduce the qubits of the second quantum dot into a potential well that can move; e) Guide the movable potential well to the static potential well; f) Detecting charge in a static potential well using a sensor element; g) Examine the charge change in the static potential well.

[0020] This invention is essentially based on the Pauli principle, which states that an electronic energy level can never be occupied by an electron with the same spin. A static potential well is generated on one hand by means of a gate electrode, and a movable potential well is also created on the other. A quantum dot is introduced into the static potential well, in which the quantum mechanical state (spin in the case of an electron) at one energy level is known. Using the movable potential well, another quantum dot is guided to the static potential well at the same energy level. If the quantum mechanical states are different, the energy level is now filled. In this case, a sensor element detects a change in charge at the energy level. If the quantum mechanical states of the quantum dots are the same, the energy level can no longer accommodate a quantum dot. The quantum mechanical state at that energy level therefore remains unchanged. Thus, it can be determined which quantum mechanical state the guided quantum dot possesses.

[0021] To guide a quantum dot to a static potential well via a movable potential well, the quantum dot must be able to translate across the substrate over a considerable distance without altering its quantum mechanical state. For this purpose, the quantum dot is quasi-trapped in a potential well, which is generated in a suitable manner by a gate electrode assembly. The potential well then moves continuously and directionally across the substrate, causing the quantum dot to move over distances in its quantum mechanical state. To allow for the continuous movement of the potential well, the electrode fingers of the gate electrodes are interconnected accordingly.

[0022] In an advantageous design of the electronic component according to the invention, a magnetic field generator is provided for generating a gradient magnetic field to initialize the quantum mechanical state of the quantum dot in the static potential well. For example, a gradient magnetic field or an oscillating magnetic field can be generated using a micromagnet. These magnetic fields move the quantum dot to the desired quantum mechanical state. This allows the electronic component to be initialized so that it can interact with quantum dots introduced at the same energy level.

[0023] In a preferred embodiment of the electronic component according to the invention, the second gate electrode assembly comprises two gate electrodes that together construct a static double potential well, wherein each static potential well has a quantum dot with a different quantum mechanical state. Here, the potential wells are each occupied by a known quantum mechanical state (spin in the case of an electron). Here, the charge carrier of one of the quantum dots held in the double potential well exchanges charge carriers with that of the moving quantum dot. Thus, the moving quantum dot always acquires a defined quantum mechanical state because the quantum mechanical state of the quantum dots in the double potential well is known. The sensor element can now detect the presence of a charge exchange at the static double potential well. From this, it can be deduced what quantum mechanical state the introduced quantum dot possesses.

[0024] In a preferred design of the electronic component, the gate electrode assembly consists of two parallel gate electrodes forming a channel-like structure. This design ensures that the potential well can only move along specific tracks within the substrate.

[0025] In advantageous designs of such electronic components, the substrate comprises gallium arsenide (GaAs) and / or silicon germanium (SiGe). These materials are capable of generating a two-dimensional electron gas in which quantum dots can be generated, held, and moved. In the case of gallium arsenide, the quantum dots are occupied by electrons. In the case of silicon germanium, the quantum dots are occupied by holes lacking electrons.

[0026] Another preferred configuration for the electronic components can be achieved by configuring the interconnected gate electrodes of the potential wells for motion to be periodically and / or phase-shifted with voltage. This allows the potential wells to be continuously guided across the substrate. Therefore, a quantum dot located within the potential well can be translated across the substrate by means of the potential well. Here, the quantum dot does not lose its original quantum mechanical state.

[0027] A preferred design for the electronic component is that the corresponding gate electrodes are interconnected at least every third electrode finger for a movable potential well. This ensures that the potential well is always secured for at least one cycle during which it moves. Only in this way can continuous movement of the potential well along with the quantum dot be achieved. In principle, other combinations are possible when the gate electrodes are interconnected, as long as movement of the potential well and quantum dot together can be achieved. Accordingly, an advantageous design for the method of the electronic component according to the invention is obtained by the following: the corresponding electrodes are interconnected at least every third electrode finger and periodically subjected to a voltage.

[0028] Another advantageous design of the electronic component according to the invention is that it includes a connection device for connecting to qubits of a quantum computer. The states of quantum dots translated over greater distances are particularly suitable in the case of quantum computers. Here, it is appropriate to interconnect the qubits. Therefore, the electronic component must have the contact possibility to interconnect at least two qubits in order to transfer the quantum state of a quantum dot from one qubit to another.

[0029] Other designs and advantages arise from the subject matter of the dependent claims and the accompanying drawings, together with the related description. Embodiments are explained in more detail below with reference to the accompanying drawings. The invention should not be limited to the embodiments listed. The invention should be understood in relation to all objects that will be apparent to those skilled in the art now and in the future for carrying out the invention. The following detailed description relates to the presently best possible implementation of this disclosure. These embodiments are provided only to illustrate the invention in more detail. Therefore, the description should not be construed in a limiting sense, but is merely used to illustrate the general principles of the invention, and thus the scope of the invention is preferably defined by the appended claims. The prior art referenced herein is considered part of the disclosure relating to this invention. Attached Figure Description

[0030] Figure 1 The electronic components used to read the quantum state of a quantum dot with a static potential well are shown in a schematic top view.

[0031] Figure 2 The process of an electronic component for reading the quantum state of a quantum dot with a static potential well, according to the present invention, is shown in schematic schematic form.

[0032] Figure 3 The electronic components used to read the quantum state of a quantum dot with a static double potential well are shown in a schematic top view.

[0033] Figure 4 The process of an electronic component according to the present invention for reading the quantum state of a quantum dot with a static double potential well is shown in schematic form. Detailed Implementation

[0034] exist Figure 1 The diagram illustrates a first embodiment of the electronic component 10 according to the invention, which is constructed of a semiconductor heterostructure. The component's structure is preferably at the nanoscale. Undoped silicon germanium (SiGe) is used as the substrate 12 for the electronic component 10. The electronic component 10 is designed to contain a two-dimensional electron gas (2DEG). Gate electrode assemblies 16 and 18 are disposed on the surface 14 of the substrate 12.

[0035] The gate electrode assembly 16 has two gate electrodes 20, 22. Each gate electrode 20, 22 is electrically isolated from each other in a suitable manner using an insulating layer 24. The gate electrode assemblies 16, 18 are thus layered, wherein an insulating layer 24 is correspondingly provided between each gate electrode 20, 22. Furthermore, the gate electrodes 20, 22 include electrode fingers 26, 28, which are arranged parallel to each other on the surface 14 of the substrate 12.

[0036] Gate electrode assemblies 16 and 18 are supplied with a suitable voltage via electrical connections. By appropriately applying a sinusoidal voltage to the gate electrodes 20 and 22 of the gate electrode assembly 16, a potential well is generated in the substrate 12. Quantum dots or charge carriers trapped in this potential well can thus be translated across the substrate. This potential well is longitudinally translated across the substrate by appropriately manipulating electrode fingers 26 and 28 with a sinusoidal voltage. Quantum dots or charge carriers quasi-trapped in such a potential well can be translated over a relatively long distance in the two-dimensional electron gas of the SiGe substrate 12 without undergoing quantum mechanical state changes.

[0037] Gate electrode assembly 16 is constructed in a region in which the quantum dot can be translated by means of a potential well. Conversely, gate electrode assembly 18 constructs a static potential well. Gate electrode assembly 18 includes barrier gate electrodes 30, 32 and pump gate electrode 34, which can place the quantum dot or charge carrier in motion or oscillation. Pump gate electrode 34 is arranged between barrier gate electrodes 30, 32. Similarly, gate electrodes 30, 32 and 34 are respectively separated by insulating layer 24.

[0038] A sensor element 36 for detecting changes in charge is coupled to the barrier gate electrode assembly. The sensor element 36 detects the charge present in the static potential well. The potential well is generated by the gate electrode assembly 18.

[0039] Figure 2 The process for reading the quantum state of the qubit in quantum dot 42 is shown schematically. The diagram shows a cross-section into electronic component 10, so that only electrode fingers 26, 28, barrier gate electrodes 30, 32, and pump gate electrode 34 are visible in the cross-sectional view. Below this, sequences A to C are shown for illustrative purposes, showing the orientation of potential wells 46, 48 in substrate 12. The electrode fingers 26, 28 of the gate electrode assembly 16 are configured to move through potential well 46 in substrate 12. Here, the movement of quantum dot 42 in potential well 46 is achieved through appropriate interconnections of the electrode fingers 26, 28. The electrode fingers 26, 28 of the gate electrode assembly 16 are periodically and alternately connected together, causing a nearly continuous movement of quantum dot 42 through substrate 12 in potential well 46.

[0040] Electronic component 10 is based on the Pauli principle, which states that an electronic energy level can never be occupied by an electron with the same spin. A static potential well 48 is generated on one hand by means of gate electrodes 30, 32, and a movable potential well 46 is generated on the other hand by means of gate electrodes 26, 28. A quantum dot 342 is introduced into the static potential well 48, wherein the quantum mechanical state (spin in the case of an electron) at one energy level is known. This quantum dot is oriented using pump gate electrode 40, for example, spin-up, as shown here. Another quantum dot 44 is guided to the static potential well 48 at the same energy level via the movable potential well 46. Arrow 50 indicates the translation direction of quantum dot 344 along with the movable potential well 346. If the quantum mechanical states are different, the energy level is now filled. This filling can be achieved by tunneling, indicated by arrow 352.

[0041] With the quantum dot already present, sensor element 36 detects the change in charge at that energy level. If the quantum mechanical states of quantum dots 42 and 44 are identical, then that energy level can no longer accommodate charge carrier 58. The quantum mechanical state at that energy level therefore remains unchanged. Thus, it is possible to determine which quantum mechanical state the introduced quantum dot 42 possesses.

[0042] exist Figure 3 Another embodiment of the electronic component 10 according to the invention is shown, which again comprises a semiconductor heterostructure. The structure of this component is preferably at the nanoscale. Undoped silicon germanium (SiGe) is used as the substrate 12 for the electronic component 10. The electronic component 10 is designed to contain a two-dimensional electron gas (2DEG). Gate electrode assemblies 16, 18 are disposed on the surface 14 of the substrate 12.

[0043] The gate electrode assembly 16 has two gate electrodes 20, 22. Each gate electrode 20, 22 is electrically isolated from each other in a suitable manner by means of an insulating layer 24. The gate electrodes 20, 22 of the gate electrode assembly 16 are thus arranged in layers, wherein an insulating layer 24 is provided between each gate electrode 20, 22 of the gate electrode assembly 16. Furthermore, the gate electrodes 20, 22 include electrode fingers 26, 28, which are arranged parallel to each other on the surface 14 of the substrate 12.

[0044] Gate electrode assemblies 16 and 18 are supplied with a suitable voltage via electrical connections. By appropriately applying a sinusoidal voltage to the gate electrodes 20 and 22 of the gate electrode assembly 16, a movable potential well is generated in the substrate 12. The quantum dot 42 or charge carrier trapped in this potential well can thus be translated across the substrate. The potential well is longitudinally translated across the substrate by appropriately manipulating the electrode fingers 26 and 28 with a sinusoidal voltage. The quantum dot 42 quasi-trapped in such a potential well can be translated over a relatively long distance in the two-dimensional electron gas of the SiGe substrate 12 without undergoing a quantum mechanical state change.

[0045] The gate electrode assembly 18 constructs a static double potential well. The gate electrode assembly 18 includes barrier gate electrodes 30, 32, and 38, and, in addition to the pump gate electrode 34, an additional pump gate electrode 40, which can place the quantum dot or charge carrier in motion or oscillation. The pump gate electrodes 34 and 40 are alternately arranged between the barrier gate electrodes 30, 32, and 38.

[0046] A sensor element 36 for detecting charge changes is connected to a barrier gate electrode assembly 18. The sensor element 36 detects the charge present in a static double potential well. The double potential well is generated by the gate electrode assembly 18.

[0047] Figure 4 A schematic diagram of the process for reading the quantum state of a qubit in quantum dot 42 is shown. The diagram shows a cross-section into electronic component 10, such that only electrode fingers 26, 28, barrier gate electrodes 30, 32, 38, and pump gate electrodes 34, 40 are visible in the cross-section. Below this, for functional explanation, a sequence from A to F shows the orientation of potential wells 46, 64, 66 in substrate 12. Electrode fingers 26, 28 of gate electrode assembly 16 form a movable potential well 46 through substrate 12. The movement of the potential well 46 occurs here through the appropriate interconnection of electrode fingers 26, 28. For this purpose, electrode fingers 26, 28 of gate electrode assembly 16 are periodically and alternately interconnected, which causes the potential well 46 to move almost continuously through substrate 12.

[0048] Electronic component 10 is based on the Pauli principle, which states that an electronic energy level can never be occupied by an electron with the same spin. A static double potential well 62 is generated on one hand, and a movable potential well 46 on the other, through gate electrodes 30, 32, and 38. Charge carriers 58 are introduced into the first potential well 64 of the static double potential well 62. The two charge carriers 58 are separated from the pump gate electrodes 34 and 40, for example, by a gradient magnetic field. The split charge carriers 60 tunnel into the second static potential well 66. Through the movable potential well 46, another quantum dot 42 is guided to the second static potential well 66 of the double potential well 62 in the same level. Arrow 50 indicates the translation direction of quantum dot 42 and the movable potential well 46. Quantum dot 60 of the second static potential well 66 exchanges with quantum dot 42 of the movable potential well 46. The quantum mechanical state with the movable potential well 46 is known. If quantum dot 42 has the same spin as the quantum dot 60 that was guided away, then quantum dot 42 tunnels back into the first static potential well of the double potential well 62. Sensor element 36 does not detect any charge change. If the quantum mechanical states of quantum dots 60 and 42 are different, then a charge change is detected. Filling can be accomplished by tunneling, indicated by arrow 52.

[0049] List of reference numerals 10 Electronic components 12 base 14 sides 16. Grid electrode assembly 18. Gate electrode assembly 20 gate electrodes 22 gate electrodes 24 insulation layers 26 electrode fingers 28 electrode fingers 30 barrier gate electrode 32 Barrier Gate Electrode 34 Pump Grid Electrode 36 sensor elements 38 barrier gate electrode 40 pump grid electrode 42 quantum dots 44 quantum dots 46. ​​Potential well of motion 48 Static Potential Well 50 Arrow (Translation) Arrow 52 (tunneling) 58 Charge carriers 60 split quantum dots 62 double potential wells 64 First Static Potential Well 66. Second static potential well.

Claims

1. An electronic component (10) for reading the quantum state of a qubit in a first quantum dot (42), comprising a semiconductor component having a gate electrode assembly, including a) A substrate with two-dimensional electron gas or electron hole gas (12); b) Electrical contacts for connecting the gate electrode assembly to the voltage source; c) A first gate electrode assembly (16) with gate electrodes (20, 22) and a second gate electrode assembly (18) with electrode fingers (30, 32, 34) arranged at the surface (14) of the electronic component (10) for generating a potential well in the substrate (12). d) The gate electrodes (20, 22) of the first gate electrode assembly (16) have parallel extending electrode fingers (26, 28), wherein, i. The electrode fingers (26, 28) of the first gate electrode assembly (16) are periodically and alternately connected together, which causes the potential well (46) to move almost continuously across the substrate (12), wherein the first quantum dot (42) is translated together with the movable potential well (46), and ii. The electrode fingers (30, 32, 34) of the second gate electrode assembly (18) form a static potential well (48, 62, 64), in which a second quantum dot (44) having a known quantum mechanical state is disposed. Its features e) A sensor element (36) is provided for detecting changes in charge, the sensor element detecting the charge in the static potential well (48, 62, 64), wherein the first quantum dot (42) is translated to the second quantum dot (44).

2. The electronic component (10) according to claim 1, characterized in that, A magnetic field generator is provided to generate a gradient magnetic field for initializing the quantum mechanical state of the second quantum dot (44) of the static potential well (48, 62, 64).

3. The electronic component (10) according to any one of claims 1 or 2, characterized in that, The second gate electrode assembly (18) includes two additional electrode fingers (38, 40) that together construct a static double potential well (62, 64, 66), wherein the double potential well (62, 64, 66) includes the static potential well (48, 62, 64) and another static potential well (66), and wherein another quantum dot (60) introduced into the other static potential well (66) has a different quantum mechanical state than the quantum dot introduced into the static potential well (48, 62, 64).

4. The electronic component (10) according to claim 1 or 2, characterized in that, The first gate electrode assembly (16) for the movable potential well (46) consists of two parallel gate electrodes that form a channel-like structure.

5. The electronic component (10) according to claim 1 or 2, characterized in that, The substrate (12) of the electronic component (10) comprises gallium arsenide and / or silicon germanium.

6. The electronic component (10) according to claim 1 or 2, characterized in that, The gate electrodes (20, 22) connected together are configured to be periodically and / or phase-shiftedly applied voltage to the movable potential well (46).

7. The electronic component (10) according to claim 1 or 2, characterized in that, The corresponding third electrode fingers (26, 28) of the gate electrodes (20, 22) are connected together with respect to the movable potential well (46).

8. The electronic component (10) according to claim 1 or 2, characterized in that, It is equipped with a connection device for connecting to qubits of a quantum computer.

9. The electronic component (10) according to claim 1 or 2, characterized in that, A magnetic field generator is provided for use with a connectable magnetic field.

10. A method for an electronic component (10) according to any one of claims 1-9, comprising the following method steps: a) Introducing a charge carrier (58) into the second quantum dot (44) of a static potential well (48, 62, 64); b) Initialize the quantum mechanical state of the charge carrier (58) of the second quantum dot (44); c) The charge of the second quantum dot (44) is detected by means of sensor element (36); d) Introduce the qubits of the first quantum dot (42) into a potential well (46) that can move; e) Guide the movable potential well (46) to the static potential well (48, 62, 64); f) Transfer the charge from the first quantum dot (42) to the second quantum dot (44); g) Detecting the charge in the static potential well (48, 62, 64) by means of the sensor element (36); h) Examine the charge changes in the static potential wells (48, 62, 64).

11. The method for electronic components (10) according to claim 10, characterized in that, Construct a double potential well (62, 64, 66), wherein the double potential well (62, 64, 66) includes the static potential well (48, 62, 64) and another static potential well (66), wherein another quantum dot (60) introduced into the other static potential well (66) has a different quantum mechanical state from the second quantum dot (44) introduced into the static potential well (62, 64).

12. The method for electronic components (10) according to claim 11, characterized in that, The gate electrodes (20, 22) connected together are phase-shifted with respect to the movable potential well (46), which causes the movable potential well (46) to move almost continuously through the substrate (12), wherein the first quantum dot (42) is translated together with the movable potential well (46).

13. The method for electronic components (10) according to claim 11, characterized in that, Accordingly, every fourth gate electrode (20, 22) is connected together with respect to the movable potential well (46) and is periodically loaded with voltage.

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