Processing device and processing method

Abstract

The present application provides a processing apparatus and a processing method for reducing the number of gas boxes for supplying processing gas to gas processing chambers in a substrate processing apparatus having a plurality of gas processing chambers arranged around a transfer chamber. A processing apparatus for processing a substrate has a plurality of processing chambers in which the substrate is processed in an atmosphere of a desired processing gas, a plurality of tank units arranged corresponding to the plurality of processing chambers, respectively, the tank units having a plurality of tanks for temporarily storing the processing gas, and a gas box for supplying processing gas to the processing chambers via the tank units.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a processing method. Background Technology

[0002] Patent Document 1 discloses a processing apparatus in which multiple processing chambers for performing a prescribed treatment on the subject under a prescribed gas atmosphere are connected around a conveying chamber having a conveying mechanism for conveying the subject. According to the processing apparatus, a gas box is provided at the top or bottom of each processing chamber, and the gas box contains a gas control unit for introducing gas into each processing chamber.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-243858 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The technology disclosed herein is used to reduce the number of gas boxes that supply processing gas to the gas processing chambers in a processing apparatus for a substrate having multiple gas processing chambers arranged around a transport chamber.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure is a processing apparatus for processing a substrate, the processing apparatus comprising: a plurality of processing chambers in which the substrate is processed under a desired processing gas atmosphere; a plurality of tank units respectively disposed corresponding to the plurality of processing chambers, the tank units having a plurality of tanks for temporarily storing the processing gas; and a gas tank that supplies the processing gas to the processing chambers via the tank units.

[0010] The effects of the invention

[0011] According to this disclosure, the number of gas boxes that supply processing gas to the gas processing chambers in a processing apparatus for a substrate with multiple gas processing chambers arranged around the transfer chamber can be reduced. Attached Figure Description

[0012] Figure 1 This is a top view showing an outline of the structure of the wafer processing apparatus according to this embodiment.

[0013] Figure 2 This is a system diagram showing a general outline of the structure of the gas supply module.

[0014] Figure 3 This is an explanatory diagram showing the connection structure of the gas tank.

[0015] Figure 4 This is a flowchart illustrating the main steps of the processing method involved in this embodiment.

[0016] Figure 5 This is an illustrative diagram that schematically shows the preprocessing process of the processing module.

[0017] Figure 6 This is an explanatory diagram showing an example of the control pressure characteristics obtained in the processing module.

[0018] Figure 7 This is an illustrative diagram that schematically shows the preprocessing process of the processing module.

[0019] Figure 8 This is a diagram showing the main steps involved in supplying processing gas to the processing module.

[0020] Figure 9 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0021] Figure 10 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0022] Figure 11 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0023] Figure 12 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0024] Figure 13 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0025] Figure 14 This is an explanatory diagram showing the supply of processing gas to the processing module.

[0026] Figure 15 This is a diagram illustrating the main processes involved in supplying the processing gas in other embodiments. Detailed Implementation

[0027] In the manufacturing process of semiconductor devices, semiconductor wafers (hereinafter referred to as "wafers") undergo various gas treatments, such as film deposition, cleaning, and other plasma treatments, under a desired gas atmosphere. These gas treatments are performed, for example, inside a vacuum processing chamber where the internal atmosphere can be controlled to be reduced pressure. Furthermore, in wafer processing apparatuses that perform these gas treatments, multiple vacuum processing chambers are sometimes provided for the transport chamber used for transporting wafers under a vacuum atmosphere.

[0028] Patent Document 1 disclosed a processing apparatus in which multiple processing chambers are connected around a transport chamber having a transport mechanism for transporting a workpiece (wafer) and a predetermined process is performed under a predetermined gas atmosphere. According to the processing apparatus described in Patent Document 1, multiple gas boxes for introducing processing gas into each processing chamber are provided corresponding to each processing chamber.

[0029] However, in the case of setting up multiple gas boxes corresponding to multiple vacuum processing chambers, there is a need for cost and space commensurate with the number of gas boxes, thus requiring a reduction in the number of gas boxes installed in the processing device.

[0030] However, simply reducing the number of gas chambers by merging multiple gas chambers leads to a reduction in the variety of gas processes that can be controlled simultaneously within the processing unit. Specifically, when different gas processes are performed in parallel in each vacuum chamber, it may be impossible to supply the appropriate processing gas to each chamber if the types of processing gases used in each chamber are different. Therefore, there is room for improvement in conventional processing units from the perspective of reducing the number of gas chambers required for that unit.

[0031] The technology disclosed herein was developed in view of the above circumstances, reducing the number of gas boxes supplied with processing gas to the gas processing chambers in a processing apparatus for a substrate having multiple gas processing chambers arranged around a transport chamber. Hereinafter, with reference to the accompanying drawings... Figure 1 The wafer processing apparatus described herein is a processing apparatus. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0032] <Wafer Processing Equipment>

[0033] First, the wafer processing apparatus involved in this embodiment will be explained. Figure 1 This is a top view showing an outline of the structure of the wafer processing apparatus 1 according to this embodiment. In the wafer processing apparatus 1, a desired gas treatment, such as film deposition, cleaning, or other plasma treatment, is performed on the wafer W, which serves as a substrate.

[0034] like Figure 1 As shown, the wafer processing apparatus 1 has a structure in which an atmospheric section 10 and a depressurization section 11 are connected as a single unit via load interlock modules 20 and 21. The atmospheric section 10 includes an atmospheric module for performing desired processing on the wafer W under atmospheric pressure. The depressurization section 11 includes a depressurization module for performing desired processing on the wafer W under a depressurized atmosphere.

[0035] Loading interlock modules 20 and 21 are configured to connect the loader module 30 (described later) of the atmospheric section 10 and the transfer module 50 (described later) of the depressurization section 11 via gate valves 22 and 23, respectively. Loading interlock modules 20 and 21 are configured to temporarily hold the wafer W. Furthermore, loading interlock modules 20 and 21 are configured to switch between atmospheric pressure and depressurized atmosphere (vacuum state) internally.

[0036] The atmospheric section 10 includes: a loader module 30, which has a wafer transport mechanism 40 described later; and a loading port 32 for holding a front-opening wafer transfer box 31 capable of holding multiple wafers W. Alternatively, an orienting module (not shown) for adjusting the horizontal orientation of the wafers W and a storage module (not shown) for storing multiple wafers W may be disposed adjacent to the loader module 30.

[0037] The loader module 30 consists of a rectangular housing, the interior of which is maintained at atmospheric pressure. Multiple, for example, five loading ports 32 are arranged on one side of the long side of the housing constituting the loader module 30. Loading interlock modules 20 and 21 are arranged on the other side of the long side of the housing constituting the loader module 30.

[0038] A wafer transport mechanism 40 for transporting wafers W is provided inside the loader module 30. The wafer transport mechanism 40 includes a transport arm 41 that holds and moves the wafer W, a rotary table 42 that supports the transport arm 41 in a rotatable manner, and a rotary mounting stage 43 on which the rotary table 42 is mounted. In addition, a guide rail 44 extending along the long side of the loader module 30 is provided inside the loader module 30. The rotary mounting stage 43 is mounted on the guide rail 44, and the wafer transport mechanism 40 is configured to move along the guide rail 44.

[0039] The decompression unit 11 includes: a transfer module 50, which transports the wafer W inside the transfer module 50; and a processing module 60, which performs desired processing on the wafer W transported from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 are maintained in a decompression atmosphere. Furthermore, in this embodiment, multiple, for example, six processing modules 60 are connected to one transfer module 50. Moreover, the number and configuration of the processing modules 60 are not limited to this embodiment and can be arbitrarily set.

[0040] The transfer module 50 is constructed of a rectangular housing and is connected to the loading interlock modules 20 and 21 as described above. After the wafer W, which has been moved into the loading interlock module 20, is transferred to a processing module 60 for the desired processing, the transfer module 50 moves the processed wafer W out to the atmosphere section 10 via the loading interlock module 21.

[0041] A wafer transport mechanism 70 for transporting wafers W is provided inside the transport module 50. The wafer transport mechanism 70 includes a transport arm 71 that holds and moves the wafer W, a rotary table 72 that rotatably supports the transport arm 71, and a rotary mounting stage 73 on which the rotary table 72 is mounted. Additionally, a guide rail 74 extending along the long side of the transport module 50 is provided inside the transport module 50. The rotary mounting stage 73 is mounted on the guide rail 74, and the wafer transport mechanism 70 is configured to move along the guide rail 74.

[0042] Furthermore, in the transfer module 50, the transfer arm 71 is used to receive the wafer W held in the loading interlock module 20 and transfer the wafer W to any processing module 60. In addition, the transfer arm 71 holds the wafer W that has undergone the desired processing by the processing module 60 and moves the wafer W out to the loading interlock module 21.

[0043] The processing module 60, which serves as the processing chamber, is arranged adjacent to the transfer module 50 via a gate valve 61. Within the processing module 60, any gas processing, such as film deposition, cleaning, or other plasma processing, is performed depending on the purpose of the wafer processing.

[0044] Additionally, a gas supply module 80 is provided in the pressure reduction section 11 for supplying the target processing gas to each processing module 60. The gas supply module 80 includes: a gas tank 90, which houses a gas control unit for controlling the gas supply to each processing module 60; and tank units 100, of which a plurality of tank units 100 are provided corresponding to each processing module 60. In this embodiment, for example, six tank units 100 are provided. The tank units 100 are used to temporarily store the processing gas for the corresponding processing module 60.

[0045] like Figure 2 As shown, the gas tank 90 is provided with a gas source 91 and a flow controller 92 for supplying one or more gases to each tank unit 100. In one embodiment, the gas tank 90 is configured to supply one or more gases from their respective gas sources 91 to the tank unit 100 via their respective flow controllers 92. Each flow controller 92 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, in the following description, a mixture of one or more gases supplied from the gas tank 90 will be referred to as a "processing gas" used in gas processing in the processing module 60.

[0046] Furthermore, there is no particular limitation on the number of gas boxes 90 corresponding to the wafer processing apparatus 1, and more than one gas box 90 can be provided. In addition, in this embodiment, as shown... Figure 1The example shown is of a wafer processing apparatus 1 with two gas boxes 90. However, by making the number of gas boxes 90 less than the number of processing modules 60, the cost and space required for the installation of the gas boxes 90 can be reduced compared to conventional wafer processing apparatuses.

[0047] Furthermore, the two gas chambers 90, 90 are connected by a connecting pipe 90a, which allows the processing gas to flow between the gas chambers 90. Here, as... Figure 3 of (a), Figure 3 As shown in (b), it is preferable to form a buffer portion 90b (bending portion) in the connecting pipe 90a to absorb the rigidity generated when connecting the gas boxes 90.

[0048] Each processing module 60 is provided with a plurality of tank units 100, and in this embodiment, for example, six tank units 100 are provided. The tank units 100 are used to temporarily store various processing gases from the gas tank 90 in tanks 110, 120, and 130 (described later) and then supply them to the processing modules 60. In other words, the gas tank 90 is connected to the upstream side of the tank unit 100 via an upstream side pipe 101, and the processing module 60 is connected to the downstream side via a downstream side pipe 102. Furthermore, in the following description, the upstream side (the side closest to the gas tank 90) of the processing gas supply path is sometimes simply referred to as the "upstream side", and the downstream side (the side closest to the processing module 60) of the processing gas supply path is sometimes simply referred to as the "downstream side".

[0049] like Figure 2 As shown, the tank unit 100 is provided with multiple tanks for temporarily storing the processing gas from the gas tank 90. ​​In this embodiment, for example, three tanks 110, 120, and 130 are provided. The three tanks 110, 120, and 130 are respectively connected to pressure gauges P1, P2, and P3 and thermometers T1, T2, and T3, so that the pressure and temperature of the processing gas filled inside the three tanks 110, 120, and 130 can be measured by the pressure gauges P1, P2, and P3 and the thermometers T1, T2, and T3.

[0050] In the upstream piping 101 connecting the gas tank 90 to the tank unit 100, valves 101a, 101b, and 101c are respectively installed corresponding to the three tanks 110, 120, and 130. Similarly, in the downstream piping 102 connecting the tank unit 100 to the processing module 60, valves 102a, 102b, and 102c are respectively installed corresponding to the three tanks 110, 120, and 130. Furthermore, by controlling the opening and closing of these valves, the filling of the processing gas into each tank and the supply of processing gas from each tank to the processing module 60 can be independently controlled.

[0051] In addition, the three tanks 110, 120, and 130 are connected to an exhaust pipe 103 for venting the interior of each tank individually. A vacuum pump or other venting mechanism (not shown) is connected downstream of the exhaust pipe 103. Valves 103a, 103b, and 103c are respectively installed in the exhaust pipe 103 corresponding to the three tanks 110, 120, and 130. By controlling the opening and closing of these valves, the venting of the interior of each tank can be controlled individually.

[0052] Downstream of valves 102a, 102b, and 102c in the downstream piping 102, i.e., between valves 102a, 102b, and 102c and the processing module 60, a control valve 104, an orifice pressure gauge 105 (hereinafter referred to as "orifice 105"), and a valve 102d are sequentially arranged from the upstream side.

[0053] The control valve 104 adjusts the flow rate of the processed gas supplied to the processing module 60 based on factors such as the viscosity, temperature, pressure, and type of gases constituting the processed gas flowing in the downstream piping 102. The orifice 105 includes a pressure gauge P4 located upstream of the orifice plate 105a with its orifice and a pressure gauge P5 located downstream. The flow rate of the processed gas flowing in the downstream piping 102 is calculated based on the pressure difference between pressure gauges P4 and P5. Furthermore, a thermometer T4 for measuring the temperature of the processed gas is provided upstream of the orifice 105.

[0054] An exhaust pipe 106 is connected downstream of the throttling orifice 105 in the downstream piping 102, specifically between the throttling orifice 105 and the valve 102d. An exhaust mechanism (not shown), such as a vacuum pump, is connected downstream of the exhaust pipe 106. A valve 106a is installed in the exhaust pipe 106. Furthermore, in the tank unit 100, by controlling the opening and closing of valves 102d and 106a respectively, it is possible to arbitrarily control whether to introduce processed gas from the gas tank 90 into the processing module 60.

[0055] In addition, the tank unit 100 is also provided with a bypass pipe 107 that connects the upstream side pipe 101 and the downstream side pipe 102 to each other, and an exhaust pipe 108 for exhausting the interior of the upstream side pipe 101.

[0056] One end of the bypass piping 107 is connected to the upstream side of valves 101a, 101b, and 101c in the upstream piping 101, and the other end is connected to the downstream side of valves 102a, 102b, and 102c in the downstream piping (between valves 102a, 102b, and 102c and control valve 104). A valve 107a is installed in the bypass piping 107. By controlling the opening and closing of valves 102a, 102b, 102c, and 107a, processing gas can be supplied to the processing module 60 without passing through the three tanks 110, 120, and 130.

[0057] One end of the exhaust pipe 108 is connected to the upstream side of valves 101a, 101b, and 101c in the upstream pipe 101, and the other end is connected to an exhaust mechanism (not shown) such as a vacuum pump. A valve 108a is provided in the exhaust pipe 108, and the exhaust pipe 108 is configured such that by controlling the opening and closing of the valve 108a, residual gas inside the upstream pipe 101 can be exhausted.

[0058] The wafer processing apparatus 1 described above is equipped with a control unit 140. The control unit 140 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the gas processing of the wafer W in the wafer processing apparatus 1. Additionally, the program storage unit also stores a program for controlling the supply operation of the processing gas, which will be described later. Furthermore, the aforementioned program may also be a program recorded in a computer-readable storage medium H and installed from that storage medium H into the control unit 140.

[0059] The above describes various exemplary embodiments, but the implementation is not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0060] The wafer processing apparatus 1 according to this embodiment is configured as described above. Next, a method for supplying processing gas to the processing module 60 as a processing method in the wafer processing apparatus 1 will be described.

[0061] Figure 4 This is a flowchart illustrating the main steps of the processing technology in wafer processing apparatus 1. For example... Figure 4 As shown, in wafer processing apparatus 1, gas processing is performed on wafer W at the beginning ( Figure 4 Before step S5), a device characteristic verification operation is performed. Figure 4 Steps S1 and S2) and process management actions used in gas handling ( Figure 4Steps S3 and S4 are used as pretreatments. In the following description, each of these pretreatments (steps S1 to S4) and the gas treatment of wafer W (step S5) will be described sequentially.

[0062] <Step S1: Determine the Ref control pressure>

[0063] In order to properly perform gas processing on wafer W in processing module 60, it is necessary to properly manage the supply pressure and flow rate of the processing gas supplied to the interior of processing module 60. However, each tank and orifice 105 of the gas supply module 80 connected to multiple processing modules 60 has individual differences. When gas processing is performed using the same conditions, errors may occur between the expected processing gas conditions (e.g., supply pressure, flow rate) and the actual processing gas conditions.

[0064] Therefore, in the pretreatment of the gas processing involved in this embodiment, firstly, for example, when the wafer processing apparatus 1 and processing module 60 are manufactured or during startup, the individual differences in the device characteristics of the processing module 60 are obtained. More specifically, by allowing an inactive gas (e.g., Ar gas) to circulate inside the tank unit 100, the control pressure characteristics (a 3D diagram showing the relationship between pressure, temperature, and flow rate: hereinafter referred to as "Ref control pressure") provided as a reference for the throttling orifice 105 provided in the tank unit 100 are determined.

[0065] When obtaining the Ref control pressure of the throttle orifice 105, such as Figure 5 As shown, control valves 104, 106a, and 107a are opened, and in this state, inert gas is supplied from gas tank 90. ​​This allows the inert gas to flow through bypass pipe 107 (without passing through the three tanks 110, 120, and 130) to orifice 105. Then, based on the measurements from pressure gauges P4 and P5 and thermometer T4 at orifice 105, the following process is performed: Figure 6 The diagram shown represents the Ref control pressure in 3D.

[0066] Furthermore, in the wafer processing apparatus 1 according to this embodiment, a plurality of, for example, six processing modules 60 are connected. As described above, the throttling orifice 105 has individual differences, that is, the throttling orifice 105 of each of the six processing modules 60 has different characteristics. Therefore, it is desirable to perform the above-described Ref control pressure determination operation (3D drawing) individually for each processing module 60 provided in the wafer processing apparatus 1.

[0067] Furthermore, in this embodiment, the Ref control pressure is determined by allowing an inert gas (e.g., Ar gas) to circulate inside the tank unit 100, but the type of gas circulated to determine the Ref control pressure can be arbitrarily selected. However, when the wafer W is transported in the wafer processing apparatus 1, the interior of the processing module 60 is purged with an inert gas (Ar gas), therefore, it is preferable to use an inert gas (Ar gas) to determine the Ref control pressure under the same environment as when the wafer W is transported.

[0068] <Step S2: Confirm changes in device characteristics>

[0069] When gas processing in processing module 60 begins (step S5), the device characteristics of wafer processing apparatus 1 and each processing module 60 may sometimes change relative to the factory condition or startup condition at step S1 due to factors such as environmental characteristics and degradation over time. Moreover, when such device characteristics change, errors may occur between the desired processing gas conditions and the actual processing gas conditions.

[0070] Therefore, in the preprocessing of the gas processing according to this embodiment, for example before starting the gas processing of the wafer W in the processing module 60 (step S5), the device characteristics, i.e., the control pressure characteristics, are obtained using the same method as in step S1. Then, by comparing the obtained control pressure characteristics with the Ref control pressure determined in step S1, it is confirmed whether the control pressure characteristics (device characteristics) have changed.

[0071] Specifically, such as Figure 5 As shown, inactive gas is supplied to the interior of tank unit 100, and the control pressure characteristics of orifice 105 are obtained based on the measurement results of pressure gauges P4 and P5 and thermometer T4. Then, the error between the obtained control pressure characteristics and the Ref control pressure determined in step S1 is calculated. If the error converges within a predetermined threshold, it is determined that the device characteristics have not changed, and gas processing in processing module 60 can begin (step S5). On the other hand, if the error does not converge significantly within the predetermined threshold, it is determined that the device characteristics have changed, a warning is issued, and the start of gas processing is stopped. Alternatively, the device characteristics of processing module 60, whose gas processing has been stopped, may be rechecked, for example, after maintenance has been performed independently of other processing modules 60.

[0072] Furthermore, the threshold for comparing the control pressure characteristics with the Ref control pressure can be arbitrarily determined. For example, the sensor accuracy of the thermometer T4 and pressure gauges P4 and P5 used to obtain the control pressure characteristics can be used as the threshold. That is, it is also possible to determine that the device characteristics have changed if a significant deviation is found between the control pressure characteristics measured in step S2 and the Ref control pressure determined in step S1, indicating a significant deviation from the sensor's measurement accuracy.

[0073] <Step S3: Determine the Ref process control pressure>

[0074] As shown in steps S1 and S2, the device characteristics of the processing module 60 were confirmed by supplying an inactive gas (Ar gas) to the tank unit 100. However, the processing gas actually used in the gas processing of the wafer W (step S5) is a mixed gas containing one or more gases. Moreover, the physical properties (e.g., viscosity, specific heat, etc.) of these processing gases differ from those of the inactive gas (Ar gas), i.e., their control pressure characteristics differ. Furthermore, the physical properties of the processing gas also vary depending on the type of gas used as the processing gas and its mixing ratio. Therefore, in order to properly perform the gas processing of the wafer W, it is necessary to manage the control pressure characteristics (a 3D graph showing the relationship between pressure, temperature, and flow rate: hereinafter referred to as "Ref process control pressure") based on each type of processing gas used in the gas processing.

[0075] Therefore, in the pretreatment of the gas processing according to this embodiment, for example when the processing module 60 is started or during the additional process, the Ref process control pressure is determined for each processing gas used in the gas processing. More specifically, the process control pressure is determined by supplying the target processing gas (mixed gas) into the interior of the tank unit 100.

[0076] When determining the control pressure of the Ref process, such as Figure 7 As shown, valves 101b and 102b, control valve 104, and valve 106a are opened, and in this state, the target process gas is supplied from the gas tank 90. ​​Thus, the target process gas flows through the tank 120 to the orifice 105, for example. Furthermore, the flow rate ratio of the mixed gas flowing into the orifice 105 is set to the flow rate ratio of the mixed gas actually used in the gas processing of wafer W (hereinafter sometimes referred to as the "process flow rate ratio"). Moreover, based on the measurements from pressure gauges P4 and P5 and thermometer T4 at the orifice 105, a process flow rate ratio is prepared. Figure 6 The diagram shown is a 3D representation of the Ref process control pressure of the target processing gas.

[0077] Furthermore, the wafer processing apparatus 1 according to this embodiment is connected to a plurality of, for example, six processing modules 60. As described above, the throttling orifices 105 have individual differences, that is, the throttling orifices 105 of each of the six processing modules 60 have different characteristics. Therefore, it is desirable to perform the above-described determination of the Ref process control pressure (3D drawing) individually for each processing module 60 provided in the wafer processing apparatus 1.

[0078] Furthermore, as mentioned above, the device characteristics of tanks 110, 120, and 130 also exhibit individual differences. That is, even if gas processing is performed under the same conditions in each of the three tanks, errors may still occur between the desired processing gas conditions and the actual processing gas conditions in each tank. Therefore, it is desirable to perform the aforementioned Ref process control pressure determination operation individually for each of the tanks 110, 120, and 130 provided in the tank unit 100.

[0079] <Step S4: Adjust process control pressure>

[0080] The physical properties (e.g., viscosity, specific heat, etc.) of the process gas used in the gas processing of wafer W vary depending on the atmosphere in which the gas processing is performed. Specifically, for example, the physical properties of the process gas supplied from gas tank 90 may change due to variations in the atmosphere temperature of the processing module 60 in the tank unit 100. Therefore, in order to properly perform gas processing on wafer W, the process control pressure of the process gas used needs to be calibrated according to the environment (e.g., atmosphere temperature) before starting gas processing on wafer W.

[0081] Therefore, in the pretreatment of the gas processing according to this embodiment, for example, before starting the gas processing of the wafer W in the processing module 60 (step S5), the temperature of the processing gas flowing inside the tank unit 100 is measured. Moreover, based on the obtained temperature and the Ref process control pressure determined in step S3, the process control pressure of the processing gas used in the actual gas processing is corrected.

[0082] Specifically, such as Figure 7 As shown, processing gas is supplied to the interior of tank unit 100. Before the start of the wafer W processing in processing module 60 (step S5), the temperature of the processing gas is measured using thermometer T4. Furthermore, the process control pressure is corrected based on the measured temperature and the Ref process control pressure determined in step S3. In addition, the correction method for the process control pressure can be arbitrarily determined, but for example, correction can be performed using the gas's equation of state by using the difference between the processing gas temperature measured in step S3 and the processing gas temperature measured in step S4.

[0083] Furthermore, the above explanation used the example of measuring the temperature of the processing gas flowing inside the tank unit 100 using thermometer T4. However, if the processing gas is flowing inside the tank 120, the temperature of the processing gas can also be measured using thermometer T2 connected to the tank 120. Additionally, if the processing gas used in the gas processing of the wafer W has already been filled into a tank, the temperature of the filled processing gas can be measured using thermometers T1, T2, or T3 connected to that tank.

[0084] In addition, such as Figure 7 As shown, if the processing gas is allowed to circulate inside the tank unit 100 (tank 120) and the temperature of the processing gas is measured, the valve 102b can be closed after the temperature measurement is performed, thereby continuing to fill the tank 120 with processing gas for gas processing of wafer W.

[0085] Based on steps S1 to S4 above, before performing gas processing on wafer W using processing module 60, device characteristic verification and process management are performed. Therefore, even if, for example, device characteristics or the ambient temperature during gas processing changes, the gas processing described later can be appropriately implemented.

[0086] <Step S5: Gas Processing of Wafer W>

[0087] Next, the gas processing of wafer W performed in the processing module 60 after the above preprocessing will be explained. Figure 8 This is a diagram illustrating a general outline of the method for supplying processing gas from a gas chamber 90 to a processing module 60 during gas processing of wafer W. Additionally, Figures 9-14 yes Figure 8 The diagram illustrates the main steps of the gas supply method. Furthermore, in the wafer processing apparatus 1, gas processing of wafer W is performed in parallel using multiple processing modules 60; however, for simplicity, the following description will use the case where gas processing is performed using only one processing module 60 as an example. Additionally, in the following description, it is assumed that the target processing gas is pre-filled into the tank 110 before the gas processing of wafer W in the processing module 60 begins.

[0088] During the gas processing of wafer W in processing module 60, firstly, as... Figure 9 As shown, valve 102a, control valve 104, and valve 102d are opened, thereby supplying the processing gas pre-filled inside tank 110 to the processing module 60. Figure 8In the process 1 of tank 110, the opening degree of control valve 104 (the supply flow rate of the processing gas supplied to the processing module 60) is determined based on the type and temperature of the processing gas and based on the process control pressure corrected in step S4.

[0089] Additionally, when the processing gas is started to be supplied from tank 110 to processing module 60, such as Figure 9 As shown, the filling process of the tank 120 with the processing gas involved in the next process in the processing module 60 begins. Specifically, firstly, with valves 101b and 103b open, the target processing gas is supplied from the gas tank 90, thereby allowing the processing gas to circulate inside the tank 120. Figure 8 The manufacturing process of the 120 can (1).

[0090] In order to properly perform gas processing in the processing module 60, it is important to properly manage the mixing ratio of the processing gas supplied to the interior of the processing module 60. Therefore, when filling the tank 120 with processing gas according to this embodiment, firstly, as described above, the processing gas is allowed to circulate inside the tank 120 with valves 101b and 103b open, thereby stabilizing the partial pressure ratio of the processing gas supplied from the gas tank 90. ​​The partial pressure ratio of the processing gas can be managed by, for example, a flow controller 92 (e.g., a mass flow controller).

[0091] Furthermore, during the aforementioned stabilization of the partial pressure ratio of the processed gas, it is preferable to maintain the process flow rate ratio of the processed gas supplied from the gas tank 90 and flow the processed gas at a high flow rate, for example, five times the process flow rate. Specifically, for example, when the process flow rate ratio [sccm] of the processed gas supplied from the gas tank 90 is Ar:O2:C4F6 = 800:200:100, it is preferable to set the flow rate ratio [sccm] of the flowing processed gas to Ar:O2:C4F6 = 4000:1000:500. By maintaining the process flow rate ratio used in gas processing and flowing the processed gas at a high flow rate in this way, the time required until the partial pressure ratio stabilizes can be shortened.

[0092] Once the partial pressure ratio of the processing gas supplied from gas tank 90 is confirmed to be stable, then, as follows: Figure 10 As shown, filling tank 120 with process gas begins by closing valve 103b. Figure 8 The process 1) of filling tank 120. The filling pressure of filling tank 120 with process gas can be managed by, for example, pressure gauge P2.

[0093] Furthermore, when filling the tank 120 with the process gas, similar to the stabilization of the partial pressure ratio, it is preferable to maintain the process flow rate ratio of the process gas supplied from the gas tank 90 and fill it with a large flow rate, for example, 5 times the process flow rate. By maintaining the process flow rate ratio used in gas processing and circulating the process gas at a large flow rate, the time spent filling the tank 120 with the process gas can be shortened while maintaining the partial pressure ratio of the process gas used in gas processing.

[0094] When the internal pressure of tank 120 rises to the desired value, in other words, when the filling of the processing gas into tank 120 is complete, such as Figure 11 As shown, valve 101b is closed to complete the filling of the processing gas into tank 120. Next, as a pretreatment to begin the filling process into tank 130, valves 103c and 108a are opened to vent residual gas from inside tank 130 and the upstream piping 101. Figure 8 (Process 1) of tank 130. If there is residual processing gas used in the previous process inside tank 130 and upstream piping 101, such residual gas being supplied to processing module 60 may hinder the implementation of the desired processing process. In this embodiment, the influence of the residual gas on the process is suppressed by venting the residual gas in tank 130 and upstream piping 101 in this way.

[0095] When the processing process is based on the processing gas filled into tank 110 ( Figure 8 When process 1) is completed, the next process is started using the processing gas filled into the tank 120. Figure 8 Process 2). Specifically, such as Figure 12 As shown, by closing valve 102a, the supply of processing gas from tank 110 to processing module 60 is stopped, and by opening valve 102b, the supply of processing gas from tank 120 to processing module 60 is started. At this time, the opening degree of control valve 104 (the supply flow rate of processing gas to processing module 60) is determined based on the type and temperature of the processing gas and based on the process control pressure corrected in step S4.

[0096] Additionally, when the processing gas is started to be supplied from tank 120 to processing module 60, such as Figure 12 As shown, the filling process for the processing gas involved in the next process in the processing module 60 begins in tank 130. Specifically, after valve 108a is closed, the target processing gas is supplied from gas tank 90 with valves 101c and 103c open, thereby allowing the processing gas to circulate inside tank 130. Furthermore, the partial pressure ratio of the processing gas can be managed by flow controller 92 (e.g., mass flow controller).

[0097] Once the partial pressure ratio of the processing gas supplied from gas tank 90 is confirmed to be stable, then, as follows: Figure 13 As shown, filling tank 130 with process gas begins by closing valve 103c. Figure 8 (Process 2 of tank 130). The filling pressure of filling tank 120 with processing gas can be managed by, for example, pressure gauge P3.

[0098] Furthermore, regarding the filling process of the processing gas into tank 130, similarly to the filling process of the processing gas into tank 120, it is preferable to maintain the process flow rate ratio of the processing gas supplied from gas tank 90 and fill it at a large flow rate, for example, 5 times the process flow rate. By maintaining the process flow rate used in gas processing and filling the processing gas at a large flow rate in this way, the time spent filling the processing gas into tank 130 can be shortened.

[0099] Thus, the filling process of the processing gas for tank 130 is performed using the same method as the filling process of the processing gas for tank 120.

[0100] When the filling of the processing gas into tank 130 is complete, as follows Figure 14 As shown, valve 101c is closed to complete the filling of the processing gas into tank 130. Furthermore, as a pretreatment to begin the filling process for filling tank 110 with processing gas, valves 103a and 108a are opened to vent residual gas from inside tank 110 and the upstream piping 101. Figure 8 (Process 2 of tank 110). The method for venting the residual gas in tank 110 is the same as the method for venting the residual gas in process 1 of tank 130.

[0101] After that, as Figure 8 As shown, the same process is repeated in each of tanks 110, 120, and 130, namely, supplying processing gas to the processing module 60 (performing gas processing), venting the residual gas after gas processing (evacuating), stabilizing the partial pressure ratio by circulating the processing gas, and filling with processing gas. Furthermore, when all process processing steps for wafer W in the processing module 60 (processes 1 to 6 in this embodiment) are completed, the gas processing of wafer W in the processing module 60 (step S5) ends.

[0102] <The effects of the technology involved in this disclosure>

[0103] According to the gas supply method for the gas processing of wafer W in this embodiment, gas processing, exhaust of residual gas after gas processing, and filling of processing gas are performed in parallel in each of the plurality of tanks 110, 120, and 130 provided in the tank unit 100. Therefore, even when the gas processing of wafer W includes multiple processing processes using different processing gases, gas processing is not interrupted between these processing processes. In other words, the number of gas tanks 90 provided in the wafer processing apparatus 1 can be reduced while maintaining the responsiveness of the gas processing of wafer W.

[0104] Furthermore, according to this embodiment, the filling process gas for tanks 110, 120, and 130 is filled at a high flow rate while maintaining the process flow ratio, thereby shortening the time required for the filling process.

[0105] Here, when processing gas is supplied from gas tank 90 to only one processing module 60, by shortening the filling process time as described above, it is possible to achieve the following: Figure 8 As shown, a time interval CT is created during which processing gas is not supplied from the gas tank 90. ​​That is, although multiple processing modules 60 are provided in the wafer processing apparatus 1, by utilizing such an interval CT, processing gas can be supplied from one gas tank 90 to multiple processing modules 60 in a manner that does not interrupt gas processing.

[0106] Figure 15 This is a diagram illustrating the process gas supply flow when the gas tank 90 is connected to multiple processing modules 60. (See diagram for example.) Figure 15 As shown, the gas filling process in other processing modules 60 (PM2, PM3) is performed using the CT of the gas tank 90 in one processing module 60 (PM1 in the figure), thereby enabling gas processing to continue in each processing module 60 without interrupting the process. In other words, the number of gas tanks 90 provided in the wafer processing apparatus 1 can be reduced while maintaining the responsiveness of the gas processing of wafer W, allowing for appropriate wafer processing.

[0107] Furthermore, in this embodiment, based on the relationship between the usage time (processing gas filling time) and the unused time (intermittent time CT) of the gas tank 90 in a processing module 60, such as Figure 1 , Figure 15 As shown, three processing modules 60 are connected to one gas tank 90. ​​However, the number of processing modules 60 connected to one gas tank 90 is not limited to this and can be arbitrarily determined according to the management of the gas tank 90's usage time and non-use time.

[0108] Specifically, if the length of a process operation (gas processing time) in processing module 60 increases, for example, the interval time CT of gas tank 90 increases relatively, thus increasing the number of connections of processing module 60. Furthermore, while the above embodiment describes filling the processing gas at a high flow rate, for example, five times the process flow rate, filling the processing gas at such a high flow rate can shorten the usage time of gas tank 90 and increase the number of connections of processing module 60.

[0109] In this way, the number of processing modules 60 connected to a gas tank 90 can be arbitrarily determined based on the relationship between the usage time and the non-use time of the gas tank 90. ​​In other words, the number of processing modules 60 connected to a gas tank 90 can be arbitrarily determined based on the number of connections to that gas tank 90. ​​Furthermore, as a result, by reducing the number of gas tanks 90 compared to the number of processing modules 60, the cost and space required for installing the gas tanks 90 can be reduced compared to conventional wafer processing devices.

[0110] Furthermore, in the above embodiments, the example described is that three tanks 110, 120, and 130 are provided in a tank unit 100 provided in a processing module 60, but the number of tanks provided in the tank unit 100 is not limited to this.

[0111] For example, if the process processing performed continuously in the processing module 60 is carried out using a mixture of gases containing the same gas, there is no need to perform exhaust treatment of residual gases from the tanks and upstream piping 101 as described above. That is, since the number of processes performed in parallel in each tank is reduced, the number of tanks provided in the tank unit 100 can be reduced to two.

[0112] Furthermore, for example, when the filling process gas for each tank is filled at a high flow rate as described above, the time required for the filling process can be reduced. Thus, while gas processing is performed in one tank, the venting of residual gas and the filling process gas for the other tanks continue, thereby reducing the number of tanks provided in the tank unit 100.

[0113] Furthermore, in the above embodiments, the case where the processing module 60 is a depressurization module that processes the wafer W under a depressurized atmosphere has been described as an example. However, as long as the wafer processing apparatus performs gas processing in parallel in multiple processing modules, the technology involved in this disclosure can be applied even if the processing module 60 is an atmospheric module.

[0114] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0115] Explanation of reference numerals in the attached figures

[0116] 1: Wafer processing unit; 60: Processing module; 90: Gas box; 100: Tank unit; 110: Tank; 120: Tank; 130: Tank; W: Wafer W.

Claims

1. A processing apparatus for processing a substrate, the processing apparatus comprising: Multiple processing chambers in which the substrate is processed under a desired processing gas atmosphere; Multiple tank units are respectively arranged corresponding to multiple processing chambers, and each tank unit has multiple tanks for temporarily storing the processing gas; One or more gas tanks, which supply processing gas to the processing chamber via the tank unit; and Control Department in, The plurality of tank units includes a first tank unit having a first tank, a second tank, and a third tank. The control unit is configured to perform control simultaneously: Step (A): Supplying processing gas from the first tank to one of the plurality of processing chambers; Step (B): Supplying processing gas from one of the plurality of gas tanks to the second tank to fill the second tank with the processing gas, including: (a) Open the valve located downstream of the second tank to allow the processing gas to circulate, and stabilize the partial pressure of the processing gas from one of the plurality of gas tanks, and (b) Closing the valve to fill the second tank with the processing gas; and Step (C): Exhaust the remaining processing gas in the third tank. The processing gas is a mixture of multiple gases. In the process (B), the control unit is configured to stabilize the partial pressure at a first flow rate and maintain the ratio of the first flow rate to a second flow rate, wherein the first flow rate is greater than the second flow rate, and the second flow rate is the flow rate of the processing gas supplied from the one or more gas tanks.

2. The processing apparatus according to claim 1, characterized in that, Multiple gas chambers are provided. Each of the gas boxes is connected to at least two of the processing chambers.

3. The processing apparatus according to claim 2, characterized in that, It also includes connecting piping that connects the plurality of gas tanks. The connecting pipe has a buffer section for absorbing rigidity.

4. A processing method, which is a method for processing a substrate in a processing apparatus. The processing apparatus includes: A processing chamber in which the substrate is processed under a desired processing gas atmosphere; A tank unit comprising multiple tanks for temporary storage of the processed gas; and A gas tank that supplies the processing gas to the processing chamber via the tank unit. The processing method simultaneously performs the following steps: Step (A) involves supplying the processing gas from the first tank to the processing chamber to process the substrate; Step (B) involves supplying processing gas from the gas tank to the second tank to fill the second tank with the processing gas, and step (C) involves venting the processing gas remaining in the third tank. The process (B) includes the following processes: Step (a) involves opening a valve located downstream of the second tank to allow the processing gas to flow and stabilizing the partial pressure of the processing gas from the gas tank; and Step (b) involves closing the valve to fill the second tank with the processing gas. in, The processing gas is a mixture of multiple gases. In step (B), the partial pressure is stabilized at a first flow rate and the ratio of the first flow rate to the second flow rate is maintained, wherein the first flow rate is greater than the second flow rate, and the second flow rate is the flow rate of the processing gas supplied from the gas tank.

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