Light-emitting components

Abstract

The present invention discloses a light-emitting element, which includes a substrate; a buffer layer is located on the substrate; a first semiconductor layer is located on the buffer layer; a semiconductor column is located on the first semiconductor layer, and the semiconductor column includes a second semiconductor layer and an active layer; a first contact layer is located on the first semiconductor layer, and includes a first contact portion and a first extension portion surrounding the semiconductor column; a first electrode contact layer contacts the first contact layer; a second contact layer is located on the second semiconductor layer; the second electrode contact layer contacts the second contact layer, wherein in a top view of the light-emitting element, the second electrode contact layer surrounds multiple side walls of the first electrode contact layer; a first insulating layer is located on the first contact layer and the second contact layer, and includes a first opening of the first insulating layer located on the first contact portion and a second opening of the first insulating layer located on the second contact layer; a first electrode covers the first opening of the first insulating layer and is electrically connected to the first semiconductor layer; and a second electrode covers the second opening of the first insulating layer and is electrically connected to the second semiconductor layer.

Description

[0001] This application is a divisional application of the Chinese invention patent application (application number: 201810768343.0, application date: July 13, 2018, invention name: light-emitting element). Technical Field

[0002] The present invention relates to a light emitting element, and in particular to a light emitting element capable of emitting ultraviolet light, comprising a first semiconductor layer and a plurality of semiconductor columns located on the first semiconductor layer. Background Art

[0003] Light-Emitting Diode (LED) is a solid-state semiconductor light-emitting element with the advantages of low power consumption, low heat generation, long service life, shock resistance, small size, fast response speed and good photoelectric properties, such as stable light emission wavelength. Therefore, LEDs are widely used in household appliances, equipment indicator lights, and optoelectronic products. Summary of the invention

[0004] A light emitting element comprises a substrate; an aluminum nitride buffer layer located on the substrate; and a first semiconductor layer located on the aluminum nitride buffer layer, wherein the first semiconductor layer comprises Al x Ga 1-x N; a semiconductor column located on the first semiconductor layer, the semiconductor column comprising a second semiconductor layer and an active layer, wherein the active layer emits UV light; a first contact layer located on the first semiconductor layer, the first contact layer comprising a first contact portion and a first extension portion, wherein the first extension portion surrounds the semiconductor column; a first electrode contact layer contacts the first contact layer; a second contact layer located on the second semiconductor layer of the semiconductor column; a second electrode contact layer contacts the second contact layer, wherein in a top view of the light-emitting element, the second electrode contact layer surrounds multiple side walls of the first electrode contact layer; a first insulating layer located on the first contact layer and the second contact layer, the first insulating layer comprising a first insulating layer first opening located on the first contact portion and a first insulating layer second opening located on the second contact layer; a first electrode covering the first insulating layer first opening and electrically connected to the first semiconductor layer; and a second electrode covering the first insulating layer second opening and electrically connected to the second semiconductor layer.

[0005] A light-emitting element comprises a substrate; a first semiconductor layer located on the substrate; a plurality of semiconductor pillars located on the first semiconductor layer, the plurality of semiconductor pillars comprising a second semiconductor layer and an active layer; a first contact layer located on the first semiconductor layer, the first contact layer comprising a first contact portion located between the plurality of semiconductor pillars; a first electrode contact layer contacting the first contact layer; a second contact layer located on the second semiconductor layer of the plurality of semiconductor pillars; a second electrode contact layer contacting the second contact layer, wherein in a top view of the light-emitting element, the second electrode contact layer surrounds a plurality of side walls of the first electrode contact layer; a first insulating layer located on the first contact layer and the second contact layer, the first insulating layer comprising a first insulating layer first opening located on the first contact portion and a first insulating layer second opening located on the second contact layer; a second insulating layer located on the first insulating layer, the second insulating layer comprising a second insulating layer first opening and a second insulating layer second opening; a first electrode electrically connected to the first contact portion through the first insulating layer first opening and the second insulating layer first opening; and a second electrode electrically connected to the second contact layer through the second insulating layer second opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a top view of a light emitting element 1 disclosed in one embodiment of the present invention;

[0007] Figure 2 is a cross-sectional view of a light emitting element 1 disclosed in one embodiment of the present invention;

[0008] Figure 3A is a partial cross-sectional view of a light emitting element 2A disclosed in an embodiment of the present invention;

[0009] Figure 3B It is a partial top view of a light emitting element 2A disclosed in one embodiment of the present invention;

[0010] Figure 4A is a partial cross-sectional view of a light emitting element 2B disclosed in an embodiment of the present invention;

[0011] Figure 4B It is a partial top view of a light emitting element 2B disclosed in one embodiment of the present invention;

[0012] Figure 5 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention;

[0013] Figure 6 FIG. 4 is a schematic diagram of a light emitting device 4 according to an embodiment of the present invention.

[0014] Explanation of symbols

[0015] 1, 2A, 2B Light emitting element

[0016] 3,4 Light-emitting device

[0017] 11 base plate

[0018] 111, 221, 321 first semiconductor layer

[0019] 122, 222, 322 Second semiconductor layer

[0020] 123, 223, 323 Active layer

[0021] 12, 22, 32 semiconductor columns

[0022] S1 Surface of the first semiconductor layer

[0023] S2 substrate surface

[0024] S3 Surface of active layer

[0025] 11s First side wall 11

[0026] 111s, 221s Second side wall

[0027] 131 First contact layer

[0028] P1 First contact

[0029] 14 First insulation layer

[0030] 1402 second opening of the first insulating layer

[0031] 12s, 222s Third side wall

[0032] 132 Second contact layer

[0033] E1 First extension

[0034] 1401 First opening of the first insulating layer

[0035] 151 first electrode contact layer

[0036] 152 second electrode contact layer

[0037] 16 Second insulation layer

[0038] 1601 First opening of the second insulating layer

[0039] 1602 second opening of the second insulating layer

[0040] 171 First Electrode

[0041] 172 second electrode

[0042] 51 Package substrate

[0043] 511 First Gasket

[0044] 512 Second gasket

[0045] 53 Insulation

[0046] 54 Reflection Structure

[0047] 602 Lampshade

[0048] 604 Reflector

[0049] 606 bearing part

[0050] 608 Lighting Unit

[0051] 610 Light emitting module

[0052] 612 Lamp Holder

[0053] 614 Heat sink

[0054] 616 Connection

[0055] 618 Electrical connection components DETAILED DESCRIPTION

[0056] In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the relevant illustrations. However, the embodiments shown below are used to illustrate the light-emitting elements of the present invention, and the present invention is not limited to the following embodiments. In addition, the dimensions, materials, shapes, relative configurations, etc. of the constituent parts recorded in the embodiments of this specification are not limited to this, but are simply illustrated. The size or positional relationship of the components shown in each figure may be exaggerated for the purpose of clear description. Moreover, in the following description, in order to appropriately omit detailed description, the same or similar components are displayed with the same name or symbol.

[0057] Figure 1 It is a top view of a light emitting element 1 disclosed in an embodiment of the present invention. Figure 2 For along Figure 1 Cross-sectional view of line segment AA'.

[0058] like Figure 1 and Figure 2 As shown, a light emitting element 1 includes a substrate 11; and a semiconductor stack is located on the substrate 11, wherein the semiconductor stack includes a first semiconductor layer 111, and a plurality of semiconductor pillars 12 are separated from each other and located on the first semiconductor layer 111. The plurality of semiconductor pillars 12 each include a second semiconductor layer 122 and an active layer 123. In one embodiment of the present invention, the semiconductor pillar 12 further includes a portion of the first semiconductor layer 111, and the active layer 123 is located between the first semiconductor layer 111 and the second semiconductor layer 122.

[0059] In one embodiment of the present invention, the substrate 11 is a growth substrate, including a gallium arsenide (GaAs) chip for growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) chip for growing gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum gallium nitride (AlGaN). 2 O 3 ) chip, gallium nitride (GaN) chip or silicon carbide (SiC) chip.

[0060] In one embodiment of the present invention, a multi-layer semiconductor material layer composed of semiconductor materials and having photoelectric properties is formed on the substrate 11 by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD) or ion plating, wherein the physical vapor deposition method includes sputtering or evaporation. Then, the semiconductor material layer is patterned by photolithography and etching, and a portion of the semiconductor material layer is removed to form a semiconductor stack including a first semiconductor layer 111 and a plurality of semiconductor pillars 12 composed of an active layer 123 and a second semiconductor layer 122. The first semiconductor layer 111 and the second semiconductor layer 122 may be cladding layers, and the two have different conductivity types, electrical properties, polarities, or provide electrons or holes according to doped elements, for example, the first semiconductor layer 111 is an n-type electrical semiconductor, and the second semiconductor layer 122 is a p-type electrical semiconductor. The active layer 123 is formed between the first semiconductor layer 111 and the second semiconductor layer 122. Electrons and holes recombine in the active layer 123 under the driving of a current, converting electrical energy into light energy to emit a light. The wavelength of the light emitted by the light emitting element 1 can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor stack. The material of the semiconductor stack includes III-V semiconductor materials, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P, where 0≤x, y≤1; (x+y)≤1. According to the material of the active layer 123, when the semiconductor stack material is an AlInGaP series material, red light with a wavelength between 610nm and 650nm, green light with a wavelength between 530nm and 570nm can be emitted, when the semiconductor stack material is an InGaN series material, blue light with a wavelength between 450nm and 490nm can be emitted, or when the semiconductor stack material is an AlGaN series or AlInGaN series material, ultraviolet light with a wavelength between 400nm and 250nm can be emitted. The active layer 123 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the active layer 123 can be a neutral, p-type, or n-type electrical semiconductor.

[0061] In one embodiment of the present invention, a buffer layer (not shown) is further included, which is formed between the semiconductor stack and the substrate 11 to improve the epitaxial quality of the semiconductor stack. In one embodiment, aluminum nitride (AlN) can be used as the buffer layer. In one embodiment, the method used to form aluminum nitride (AlN) is PVD, and its target material is composed of aluminum nitride. In another embodiment, a target material composed of aluminum is used by PVD, and aluminum nitride is formed by reaction with an aluminum target material in a nitrogen source environment.

[0062] In one embodiment of the present invention, the substrate 11 comprises sapphire (Al 2 O 3 ) substrate, the first semiconductor layer 111 includes an aluminum gallium nitride (AlGaN) layer. In order to reduce the epitaxial defects caused by the lattice difference between the aluminum gallium nitride layer and the sapphire substrate, aluminum nitride (AlN) is formed as a buffer layer between the aluminum gallium nitride layer and the sapphire substrate, wherein the aluminum nitride buffer layer includes a thickness greater than 300nm, preferably greater than 1000nm, and more preferably greater than 2500nm to fill the epitaxial defects. The aluminum nitride buffer layer includes carbon (C), hydrogen (H) and / or oxygen (O) with a doping concentration lower than 2E+17. The aluminum (Al) composition percentage contained in the aluminum nitride buffer layer is greater than the aluminum (Al) composition percentage contained in the aluminum gallium nitride first semiconductor layer 111.

[0063] like Figure 1 The top view and Figure 2 Along Figure 1As shown in the cross-sectional view of line segment AA', after multiple semiconductor layers are formed on the substrate 11, the multiple semiconductor layers are patterned by photolithography and etching, and part of the semiconductor layers are removed to form a semiconductor structure including a first semiconductor layer 111 and multiple semiconductor columns 12 separated from each other, wherein the multiple semiconductor columns 12 each include a second semiconductor layer 122 and an active layer 123.

[0064] In one embodiment of the present invention, the plurality of semiconductor pillars 12 are separated from each other to expose the surface S1 of the first semiconductor layer 111. The substrate 11 includes a first sidewall 11s, the first semiconductor layer 111 includes a second sidewall 111s, and the plurality of semiconductor pillars 12 each include a third sidewall 12s. Figure 2 As shown, the first sidewall 11s of the substrate 11 is flush with the second sidewall 111s of the first semiconductor layer 111 , and the third sidewall 12s of the semiconductor pillar 12 has an oblique angle or a right angle with the surface S1 of the first semiconductor layer 111 .

[0065] In one embodiment of the present invention, the oblique angle between the third sidewall 12s of the semiconductor pillar 12 and the surface S1 of the first semiconductor layer 111 is between 10 and 80 degrees, preferably less than 60 degrees, and more preferably less than 40 degrees.

[0066] In one embodiment of the present invention (not shown), the first sidewall 11s of the substrate 11 and the second sidewall 111s of the first semiconductor layer 111 are separated by a distance to expose a surface S2 of the substrate 11. The second sidewall 111s of the first semiconductor layer 111 and the surface S2 of the substrate 11 have an obtuse angle or a right angle therebetween.

[0067] In one embodiment of the present invention, there is an oblique angle between the second sidewall 111s of the first semiconductor layer 111 and the surface S2 of the substrate 11, including an angle between 10 degrees and 80 degrees, preferably less than 60 degrees, and more preferably less than 40 degrees. There is a height greater than 10 degrees between the surface S1 of the first semiconductor layer 111 and the surface S2 of the substrate 11. Better than Better than

[0068] In one embodiment of the present invention, the surface S2 of the substrate 11 is a flat surface, wherein the flat surface comprises a roughness (Root mean square roughness, Rq) less than 8 nm, preferably less than 5 nm, and more preferably less than 2 nm.

[0069] In one embodiment of the present invention, the surface S2 of the substrate 11 includes a patterned surface (not shown), wherein the patterned surface includes a plurality of recesses extending from the surface S2 of the substrate 11 to the interior of the substrate 11 or a plurality of protrusions extending from the surface S2 of the substrate 11 to the surface S1 of the first semiconductor layer 111. From the top view of the self-luminous element 1, the plurality of recesses or protrusions each include a circle, an ellipse, a rectangle, a polygon, or any other shape. From the top view of the self-luminous element 1, the plurality of recesses or protrusions each include a bottom flush with the surface S2 of the substrate 11, and a top opposite to the bottom, wherein the top may be a plane or a point. A depth or height between the top and the bottom is between 0.1 μm and 2 μm, preferably between 0.2 μm and 0.9 μm, and more preferably between 0.5 μm and 0.7 μm. The bottom has a width or diameter between 0.05 μm and 1 μm, preferably between 0.2 μm and 0.8 μm, and more preferably between 0.3 μm and 0.5 μm.

[0070] In one embodiment of the present invention, Figure 1 From the top view of the light emitting element 1 shown, the semiconductor pillars 12 each include a circle, an ellipse, a rectangle, a polygon, or any other shape.

[0071] In one embodiment of the present invention, reducing the diameter or width of the semiconductor column 12 can reduce the forward voltage (Vf) of the light-emitting element 1 and increase the brightness of the light-emitting element 1. From the top view of the light-emitting element 1, the semiconductor column 12 has a diameter or a width greater than 4 μm and / or less than 80 μm, preferably less than 50 μm, and more preferably less than 20 μm.

[0072] In one embodiment of the present invention, the semiconductor pillars 12 may be arranged in a plurality of rows, and the semiconductor pillars 12 in any two adjacent rows or in every two adjacent rows may be aligned with or staggered with each other.

[0073] In one embodiment of the present invention, the semiconductor columns 12 can be arranged in a first row and a second row, and a first shortest distance is included between two adjacent semiconductor columns 12 on the same row, and a second shortest distance is included between a semiconductor column 12 on the first row and an adjacent semiconductor column 12 on the second row, wherein the first shortest distance is greater than or less than the second shortest distance. When an external current is injected into the light-emitting element 1, the light field distribution of the light-emitting element 1 can be uniformed through the dispersed configuration of the plurality of semiconductor columns 12, and the forward voltage of the light-emitting element 1 can be reduced.

[0074] In one embodiment of the present invention, the plurality of semiconductor columns 12 may be arranged into a first row, a second row, and a third row, wherein a first shortest distance is included between the semiconductor columns 12 on the first row and the semiconductor columns 12 on the second row, and a second shortest distance is included between the semiconductor columns 12 on the second row and the semiconductor columns 12 on the third row, wherein the first shortest distance is smaller than the second shortest distance. When an external current is injected into the light emitting element 1, the light field distribution of the light emitting element 1 may be uniformized by the dispersed configuration of the plurality of semiconductor columns 12, and the forward voltage of the light emitting element 1 may be reduced.

[0075] A first contact layer 131 is formed on the surface S1 of the first semiconductor layer 111 by physical vapor deposition or chemical vapor deposition. The material of the first contact layer 131 includes metal materials, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), rhodium (Rh) and other metals or alloys of the above materials.

[0076] In one embodiment of the present invention, the light emitted by the light emitting element 1 includes a wavelength greater than 370 nm, and the material of the first contact layer 131 includes a metal with high reflectivity, such as silver (Ag), aluminum (Al), platinum (Pt) or rhodium (Rh). In order to increase the reflectivity of the first contact layer 131, the metal layer including silver (Ag), aluminum (Al), platinum (Pt) or rhodium (Rh) has a thickness greater than 400 angstroms, preferably greater than 800 angstroms, and more preferably greater than 1200 angstroms.

[0077] In one embodiment of the present invention, the light emitted by the light emitting element 1 includes a wavelength less than 370 nm, and the material of the first contact layer 131 does not include silver (Ag).

[0078] In one embodiment of the present invention, the side of the first contact layer 131 that contacts the surface S1 of the first semiconductor layer 111 includes chromium (Cr) or titanium (Ti) to increase the bonding strength between the first contact layer 131 and the first semiconductor layer 111. In order to reduce light loss, the thickness of the chromium (Cr) or titanium (Ti) layer is less than 1000 angstroms, preferably less than 800 angstroms, and more preferably less than 500 angstroms. In addition, in order to maintain sufficient bonding strength, the chromium (Cr) and / or titanium (Ti) layer includes a thickness greater than 10 angstroms, preferably greater than 50 angstroms, and more preferably greater than 100 angstroms.

[0079] In one embodiment of the present invention, the first semiconductor layer 111 includes Al x Ga (1-x)N, where 0.3 < x < 0.8, preferably 0.35 < x < 0.7, more preferably 0.4 < x < 0.6. In order to form an ohmic contact between the first contact layer 131 and the surface S1 of the first semiconductor layer 111 and maintain sufficient bonding strength, the first contact layer 131 contains titanium (Ti) and aluminum (Al), where the ratio of titanium (Ti) / aluminum (Al) is between 0.1 and 0.2.

[0080] In an embodiment of the present invention, the first contact layer 131 includes a first contact portion P1 and a first extension portion E1. The first contact portion P1 includes a projected area located on the first semiconductor layer 111, which is larger than a projected area of a plurality of semiconductor pillars 12 located on the first semiconductor layer 111, where the projected area refers to the projected area in a normal direction perpendicular to the surface S2 of the substrate 11. As Figure 1 shown, the first extension portion E1 extends from the first contact portion P1 and surrounds the plurality of semiconductor pillars 12.

[0081] In an embodiment of the present invention, the first contact layer 131 includes a plurality of first contact portions P1 and a plurality of first extension portions E1, where the plurality of first extension portions E1 extend from the plurality of first contact portions P1 and are connected to each other, and the plurality of first contact portions P1 are connected by the plurality of first extension portions E1.

[0082] As Figure 2 shown, in an embodiment of the present invention, the first contact portion P1 of the first contact layer 131 includes a width greater than the width of the first extension portion E1.

[0083] A second contact layer 132 is formed on the second semiconductor layer 122 of the semiconductor pillar 12 by physical vapor deposition or chemical vapor deposition. The material of the second contact layer 132 includes a metal material, such as metals like chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), rhodium (Rh), or alloys of the above materials.

[0084] In an embodiment of the present invention, the light emitted by the light-emitting element 1 includes a wavelength greater than 370 nm, and the material of the second contact layer 132 includes a metal with high reflectivity, such as silver (Ag), aluminum (Al), platinum (Pt), or rhodium (Rh). In order to increase the reflectivity of the second contact layer 132, the metal layer containing silver (Ag), aluminum (Al), platinum (Pt), or rhodium (Rh) has a thickness greater than 400 Å, preferably greater than 800 Å, more preferably greater than 1200 Å.

[0085] In an embodiment of the present invention, the light emitted by the light-emitting element 1 includes a wavelength less than 370 nm, and the material of the second contact layer 132 does not include silver (Ag).

[0086] In one embodiment of the present invention, the plurality of second contact layers 132 are respectively formed on the second semiconductor layers 122 of the plurality of semiconductor pillars 12 , and the plurality of second contact layers 132 are separated from each other.

[0087] In one embodiment of the present invention, the second semiconductor layer 122 includes gallium nitride (GaN), aluminum gallium nitride (AlGaN) or boron nitride (BN), and the second semiconductor layer 122 includes a doping element, such as magnesium (Mg), to form a p-type electrical semiconductor, wherein the doping element has a concentration greater than 9E+18, preferably greater than 4E+19, and more preferably greater than 1E+20. The second contact layer 132 includes a transparent conductive material that is transparent to the light emitted by the active layer 123 and can form an ohmic contact with the second semiconductor layer 122. The transparent conductive material includes a non-metallic material, such as graphene, a metal or a metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). Since the second contact layer 132 is formed on substantially the entire surface of the second semiconductor layer 122 and contacts the second semiconductor layer 122, the current passes through the second contact layer 132 to be uniformly diffused throughout the entire second semiconductor layer 122.

[0088] In one embodiment of the present invention, the second contact layer 132 includes graphene, and the second contact layer 132 further includes a thin metal layer or a thin metal oxide layer, the material of which is, for example, nickel oxide (NiO), cobalt oxide (Co 3 O 4 ) or copper oxide (Cu 2 O), located between the second semiconductor layer 122 and the graphene to form an ohmic contact with the second semiconductor layer 122. The thin metal layer or the thin metal oxide layer has a thickness between 0.1 and 50 nm, preferably between 0.1 and 20 nm, and more preferably between 0.1 and 10 nm.

[0089] In one embodiment of the present invention, the thickness of the second contact layer 132 may be in the range of 0.1 nm to 100 nm. If the thickness of the second contact layer 132 is less than 0.1 nm, it is too thin to effectively form an ohmic contact with the second semiconductor layer 122. In addition, if the thickness of the second contact layer 132 is greater than 100 nm, it is too thick to partially absorb the light emitted by the active layer 123, thereby causing the problem of reduced brightness of the light emitting element 1.

[0090] In one embodiment of the present invention, the first contact layer 131 and the second contact layer 132 are formed on the semiconductor stack at positions that are staggered and do not overlap each other.

[0091] A first insulating layer 14 is formed by depositing an insulating material layer on the first contact layer 131 and the second contact layer 132 by physical vapor deposition or chemical vapor deposition. Then, a portion of the insulating material layer is patterned by photolithography and etching to form the first insulating layer 14, and a first opening 1401 of the first insulating layer 14 is formed on the first contact layer 131 to expose the first contact layer 131, and a second opening 1402 of the first insulating layer 14 is formed on the second contact layer 132 to expose the second contact layer 132.

[0092] In one embodiment of the present invention, the first contact layer 131 includes a plurality of first contact portions P1 and a plurality of first extension portions E1. The first insulating layer 14 includes a plurality of first openings 1401 respectively located on the plurality of first contact portions P1, wherein the plurality of first extension portions E1 are covered by the first insulating layer 14.

[0093] In one embodiment of the present invention, the first insulating layer 14 includes a plurality of second openings 1402 respectively located on the plurality of semiconductor pillars 12. In other words, the plurality of second openings 1402 includes a number that is the same as the number of the plurality of semiconductor pillars 12.

[0094] In one embodiment of the present invention, the plurality of second openings 1402 of the first insulating layer 14 includes a number greater than the plurality of first openings 1401 .

[0095] In one embodiment of the present invention, the second opening 1402 of the first insulating layer 14 has a width smaller than a width of the first opening 1401 .

[0096] In one embodiment of the present invention, the first insulating layer 14 covers the third sidewalls 12s of the plurality of semiconductor pillars 12 , covers the surface S1 of the first semiconductor layer 111 , covers the second sidewalls 111s of the first semiconductor layer 111 , and / or covers the surface S2 of the substrate 11 .

[0097] In one embodiment of the present invention, in addition to protecting the semiconductor structure, the first insulating layer 14 can also selectively reflect light of a specific wavelength by forming a Bragg reflector (DBR) structure by alternately stacking two or more materials with different refractive indices. The first insulating layer 14 is formed of a non-conductive material, including an organic material, such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer, or an inorganic material, such as silicone or glass, or a dielectric material, such as aluminum oxide (Al2O3). 2 O 3 ), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ) or magnesium fluoride (MgF x ).

[0098] A first electrode contact layer 151 and a second electrode contact layer 152 are respectively formed in the first opening 1401 and the second opening 1402 of the first insulating layer 14 by physical vapor deposition or chemical vapor deposition, and extend to cover a portion of the surface of the first insulating layer 14. The first electrode contact layer 151 is connected to the first contact portion P1 of the first contact layer 131 through the first opening 1401 of the first insulating layer 14. The second electrode contact layer 152 is connected to the plurality of second contact layers 132 through the second opening 1402 of the first insulating layer 14.

[0099] In one embodiment of the present invention, the second electrode contact layer 152 covers the plurality of semiconductor pillars 12 and a portion of the first contact layer 131 , wherein the second electrode contact layer 152 is electrically isolated from the first contact layer 131 by the first insulating layer 14 .

[0100] In one embodiment of the present invention, the first contact layer 131 includes a first contact portion P1 having a width W1 greater than a width W2 of the semiconductor column 12, the width W1 of the first contact portion P1 of the first contact layer 131 is greater than a width W3 of the first electrode contact layer 151, and the width W3 of the first electrode contact layer 151 is greater than the width W2 of the semiconductor column 12.

[0101] In one embodiment of the present invention, the first electrode contact layer 151 covers a portion of the first contact layer 131 , and the second electrode contact layer 152 covers the entire second contact layer 132 .

[0102] In one embodiment of the present invention, the first electrode contact layer 151 covers a portion of the first contact layer 131 , and the second electrode contact layer 152 covers a portion of the second contact layer 132 .

[0103] In one embodiment of the present invention, the first electrode contact layer 151 covers the entire first contact layer 131 , and the second electrode contact layer 152 covers a portion of the second contact layer 132 .

[0104] In one embodiment of the present invention, the first electrode contact layer 151 and the second electrode contact layer 152 are spaced apart from each other by a distance. In the top view of the light emitting element 1 , the second electrode contact layer 152 surrounds a plurality of sidewalls of the first electrode contact layer 151 .

[0105] In one embodiment of the present invention, in the top view of the light emitting element 1 , the second electrode contact layer 152 includes an area larger than an area of ​​the first electrode contact layer 151 .

[0106] In one embodiment of the present invention, when an external current is injected into the light emitting element 1 , the current is conducted to the first semiconductor layer 111 and the second semiconductor layer 122 through the first electrode contact layer 151 and the second electrode contact layer 152 .

[0107] like Figure 1 As shown, the first electrode contact layer 151 is close to one side of the substrate 11 , such as the left side or the right side of the center line of the substrate 11 .

[0108] In one embodiment of the present invention, the material of the first electrode contact layer 151 and the second electrode contact layer 152 includes a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), rhodium (Rh) and other metals or alloys of the above materials.

[0109] In one embodiment of the present invention, the light emitted by the light emitting element 1 includes a wavelength less than 370 nm, and the materials of the first electrode contact layer 151 and the second electrode contact layer 152 do not include silver (Ag). The materials of the first electrode contact layer 151 and the second electrode contact layer 152 include metals with high reflectivity for ultraviolet light, such as aluminum (Al), platinum (Pt) or rhodium (Rh). In order to increase the reflectivity of the first electrode contact layer 151 and the second electrode contact layer 152 for ultraviolet light, the layer including aluminum (Al), platinum (Pt) or rhodium (Rh) includes a thickness greater than 4000 angstroms, preferably greater than 8000 angstroms, and more preferably greater than 10000 angstroms.

[0110] In one embodiment of the present invention, the side of the first electrode contact layer 151 in contact with the first contact layer 131 includes chromium (Cr) or titanium (Ti) to increase the bonding strength between the first electrode contact layer 151 and the first contact layer 131. The side of the second electrode contact layer 152 in contact with the second contact layer 132 includes chromium (Cr) or titanium (Ti) to increase the bonding strength between the second electrode contact layer 152 and the second contact layer 132. In order to reduce the light loss caused by chromium (Cr) or titanium (Ti) to ultraviolet light, the layer including chromium (Cr) or titanium (Ti) has a thickness of less than 1000 angstroms, preferably less than 800 angstroms, and more preferably less than 500 angstroms. In addition, in order to maintain sufficient bonding strength, the layer including chromium (Cr) and / or titanium (Ti) has a thickness greater than 10 angstroms, preferably greater than 50 angstroms, and more preferably greater than 100 angstroms.

[0111] A second insulating layer 16 is formed by physical vapor deposition or chemical vapor deposition to form an insulating material layer on the first electrode contact layer 151, the second electrode contact layer 152 and the first insulating layer 14. The insulating material layer is then patterned by photolithography and etching to form the second insulating layer 16, and a first opening 1601 and a second opening 1602 are formed in the second insulating layer 16 to expose the first electrode contact layer 151 and the second electrode contact layer 152, respectively.

[0112] In one embodiment of the present invention, the second insulating layer 16 includes one or more first openings 1601 and one or more second openings 1602 , wherein the number of the first openings 1601 and the number of the second openings 1602 may be the same or different.

[0113] In one embodiment of the present invention, the plurality of first openings 1601 of the second insulating layer 16 are respectively located on the plurality of first electrode contact layers 151 , wherein the number of the plurality of first openings 1601 is the same as the number of the plurality of first electrode contact layers 151 .

[0114] exist Figure 1 In the top view, the first opening 1601 and the second opening 1602 of the second insulating layer 16 are respectively located on both sides of the center line of the substrate 11. For example, the first opening 1601 of the second insulating layer 16 is located on the right side of the center line of the substrate 11, and the second opening 1602 of the second insulating layer 16 is located on the left side of the center line of the substrate 11.

[0115] In one embodiment of the present invention, the first opening 1601 of the second insulating layer 16 includes a width smaller than the width of the first opening 1401 of the first insulating layer 14 .

[0116] In one embodiment of the present invention, the first opening 1601 of the second insulating layer 16 overlaps with the first opening 1401 of the first insulating layer 14 . Both the first opening 1601 of the second insulating layer 16 and the first opening 1401 of the first insulating layer 14 are located on the first contact layer 131 .

[0117] In one embodiment of the present invention, the second opening 1602 of the second insulating layer 16 is offset from the second opening 1402 of the first insulating layer 14. Specifically, the second opening 1402 of the first insulating layer 14 is located on the second contact layer 132, and the second opening 1602 of the second insulating layer 16 is located on the first contact layer 131.

[0118] In one embodiment of the present invention, when the second insulating layer 16 is a stacked structure, the stacked structure includes two or more layers, which are formed by alternating two materials with different refractive indices to form a Bragg reflector (DBR) structure, selectively reflecting light of a specific wavelength. The second insulating layer 16 is formed of a non-conductive material, including an organic material, such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer, or an inorganic material, such as silicone or glass, or a dielectric material, such as aluminum oxide (Al 2 O 3 ), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ) or magnesium fluoride (MgF x ).

[0119] A first electrode 171 and a second electrode 172 are formed on the second insulating layer 16 by electroplating, physical vapor deposition or chemical vapor deposition. Figure 1 In the top view of , the first electrode 171 is close to one side of the substrate 11, for example, the right side of the center line of the substrate 11, and the second electrode 172 is close to the other side of the substrate 11, for example, the left side of the center line of the substrate 11. The first electrode 171 covers the first opening 1601 of the second insulating layer 16 to contact the first electrode contact layer 151, and forms an electrical connection with the first semiconductor layer 111 through the first contact layer 131. The second electrode 172 covers the second opening 1602 of the second insulating layer 16, contacts the second electrode contact layer 152, and forms an electrical connection with the second semiconductor layer 122 through the second contact layer 132.

[0120] In one embodiment of the present invention, a plurality of semiconductor pillars 12 located below a coverage area of ​​the first electrode 171 include a first spacing D1 to separate each other, a plurality of semiconductor pillars 12 located outside the coverage area of ​​the first electrode 171 include a second spacing D2 to separate each other, and the first spacing D1 is greater than the second spacing D2.

[0121] In one embodiment of the present invention, the light emitting element 1 further comprises a semiconductor platform. The semiconductor platform comprises a first semiconductor layer, an active layer and a second semiconductor layer, and is located below the first electrode 171, wherein a plurality of semiconductor pillars 12 located outside a coverage area of ​​the first electrode 171 comprise a second spacing D2 to separate each other, and the second semiconductor layer of the semiconductor platform comprises a second spacing D2 greater than the width between the plurality of semiconductor pillars.

[0122] In one embodiment of the present invention, the first contact portion P1 of the first contact layer 131 is located below the first electrode 171 and / or the second electrode 172 , and the first extension portion E1 of the first contact layer 131 is located below the first electrode 171 and the second electrode 172 .

[0123] In one embodiment of the present invention, the first electrode 171 includes a size that is the same as or different from a size of the second electrode 172 , and the size may be a width or an area.

[0124] In one embodiment of the present invention, in the top view of the light emitting element 1, the shape of the first electrode 171 is the same as or similar to the shape of the second electrode 172. For example, the shapes of the first electrode 171 and the second electrode 172 are rectangular. Figure 1 shown.

[0125] In one embodiment of the present invention, the materials of the first electrode 171 and the second electrode 172 include metal materials, such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt) and other metals or alloys of the above materials. The first electrode 171 and the second electrode 172 can be a single layer or a stacked structure. When the first electrode 171 and the second electrode 172 are a stacked structure, the first electrode 171 includes a first upper pad and a first lower pad, and the second electrode 172 includes a second upper pad and a second lower pad. The upper pad and the lower pad have different functions.

[0126] In one embodiment of the present invention, the function of the upper pad is mainly used for welding and forming leads. Through the upper pad, the light emitting element 1 can be mounted on the package substrate in the form of a flip chip, using solder or by eutectic bonding of AuSn material, for example. The metal material of the upper pad includes a highly ductile material, such as tin (Sn), nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os) and other metals or alloys of the above materials. The upper pad can be a single layer or a laminated structure of the above materials. In one embodiment of the present invention, the material of the upper pad includes nickel (Ni) and / or gold (Au), and the upper pad is a single layer or a laminated structure.

[0127] In one embodiment of the present invention, the function of the lower pad is to form a stable interface with the first electrode contact layer 151 and the second electrode contact layer 152, for example, to improve the interface bonding strength between the first lower pad and the first electrode contact layer 151, or to improve the interface bonding strength between the second lower pad and the second electrode contact layer 152. Another function of the lower pad is to prevent the tin (Sn) in the solder or AuSn eutectic from diffusing into the reflective structure and destroying the reflectivity of the reflective structure. Therefore, the lower pad includes metal materials other than gold (Au) and copper (Cu), such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os) and other metals or alloys of the above materials. The lower pad can be a single layer or a stacked structure of the above materials. In one embodiment of the present invention, the lower pad includes a stacked structure of titanium (Ti) / aluminum (Al), or a stacked structure of chromium (Cr) / aluminum (Al).

[0128] In one embodiment of the present invention, in order to prevent the tin (Sn) in the solder or AuSn eutectic from diffusing into the reflective structure and destroying the reflectivity of the reflective structure, the first electrode contact layer 151 and the first electrode 171 are connected on one side and the metal material is selected from the group consisting of titanium (Ti) and platinum (Pt). The second electrode contact layer 152 and the second electrode 172 are connected on one side and the metal material is selected from the group consisting of titanium (Ti) and platinum (Pt).

[0129] Figure 3A FIG. 1 is a partial cross-sectional view of a light emitting element 2A disclosed in an embodiment of the present invention. Figure 3BThis is a partial top view of the light-emitting element 2A disclosed in an embodiment of the present invention. The light-emitting element 2A has substantially the same structure as the light-emitting element 1. Therefore, the light-emitting element 2A has the same configuration as the light-emitting element 1, and the description will be appropriately omitted or not repeated here.

[0130] As Figure 3A , Figure 3B shown, the light-emitting element 2A is Figure 2 a structural variation embodiment of the semiconductor column 12 of the light-emitting element 1 shown. In an embodiment of the present invention, the semiconductor stack includes a first semiconductor layer 221, an active layer 223, and a semiconductor column 22 located on the active layer 223. The active layer 223 includes one or more well layers and one or more barrier layers arranged alternately with each other, where the well layer includes Al x Ga 1-x N and 0.2 < x < 0.4, and the barrier layer includes Al y Ga 1-y N and 0.4 < y < 0.7. Figure 2 The semiconductor column 12 of the light-emitting element 1 shown can be changed to Figure 3A , Figure 3B shown semiconductor column 22, each of which includes a second semiconductor layer 222. In an embodiment of the invention, the semiconductor column 22 further includes a part of the active layer 223, and the active layer 223 is located between the first semiconductor layer 221 and the second semiconductor layer 222, and the active layer 223 can emit a UV light.

[0131] In an embodiment of the present invention, the substrate 11 includes a first sidewall 11s, the first semiconductor layer 221 includes a second sidewall 221s, the second semiconductor layer 222 includes a third sidewall 222s, and the active layer 223 includes a sidewall 223s. As Figure 3A shown, the third sidewall 222s of the second semiconductor layer 222 is spaced apart from the sidewall 223s of the active layer 223 by a distance to expose a surface S3 of the active layer 223, where the exposed surface S3 of the active layer 223 can be a well layer or a barrier layer, and the well layer includes Al x Ga 1-x N and 0.2 < x < 0.4, and the barrier layer includes Al y Ga 1-y N and 0.4 < y < 0.7. There is an obtuse angle or a right angle between the third sidewall 222s of the second semiconductor layer 222 and the surface S3 of the active layer 223.

[0132] In an embodiment of the present invention, from Figure 3BAs viewed from the top view of the light-emitting element 2A shown, the second semiconductor layer 222 includes a circular, elliptical, rectangular, polygonal, or any shape. The second semiconductor layer 222 is surrounded by the active layer 223, and a partial surface S3 of the active layer 223 is exposed outside the coverage area of the second semiconductor layer 222. A partial surface S3 of the active layer 223 is not covered by the second semiconductor layer 222, and the exposed surface S3 of the active layer 223 may be a well layer or a barrier layer, and the well layer includes Al x Ga 1-x N and 0.2 < x < 0.4, and the barrier layer includes Al y Ga 1-y N and 0.4 < y < 0.7.

[0133] In an embodiment of the present invention, the active layer 223 is surrounded by the first semiconductor layer 221, and a partial surface S1 of the first semiconductor layer 221 is exposed outside the coverage area of the active layer 223, wherein the first semiconductor layer 221 includes AlGaN. A partial surface S1 of the first semiconductor layer 221 is not covered by the active layer 223.

[0134] Figure 4A This is a partial cross-sectional view of a light-emitting element 2B disclosed in an embodiment of the present invention. Figure 4B This is a partial top view of the light-emitting element 2B disclosed in an embodiment of the present invention. The light-emitting element 2B has substantially the same structure as the light-emitting element 1, so the light-emitting element 2B has the same structure as the light-emitting element 1, and the description will be appropriately omitted or not repeated here.

[0135] As Figure 4A 、 Figure 4B shown, the light-emitting element 2B is Figure 2 a structural variation embodiment of the semiconductor column 12 of the light-emitting element 1 shown. In an embodiment of the present invention, the semiconductor stack includes a first semiconductor layer 321, an active layer 323, and a plurality of semiconductor columns 32 located on the first semiconductor layer 321. Each of the semiconductor columns 32 includes a second semiconductor layer 322, and the active layer 323 can emit a UV light.

[0136] In an embodiment of the invention, the semiconductor column 32 further includes a part of the active layer 323, and the active layer 323 is located between the first semiconductor layer 321 and the second semiconductor layer 322, and the active layer 323 can emit a UV light.

[0137] In an embodiment of the present invention, from Figure 4BFrom the top view of the light emitting element 2B shown, the second semiconductor layer 322 includes a circular, elliptical, rectangular, polygonal, or any other shape. The second semiconductor layer 322 is surrounded by the active layer 323, and a portion of the surface S3 of the active layer 323 is exposed outside the coverage area of ​​the second semiconductor layer 322. A portion of the surface S3 of the active layer 323 is not covered by the second semiconductor layer 322. The active layer 323 is surrounded by the first semiconductor layer 321, and a portion of the surface S1 of the first semiconductor layer 321 is exposed outside the coverage area of ​​the active layer 323, and a portion of the surface S1 of the first semiconductor layer 321 is not covered by the active layer 323, wherein the first semiconductor layer 221 includes AlGaN.

[0138] Figure 5 Schematic diagram of a light emitting device 3 according to an embodiment of the present invention. The light emitting element 1, the light emitting element 2A, or the light emitting element 2B in the aforementioned embodiments is mounted on the first pad 511 and the second pad 512 of the packaging substrate 51 in the form of a flip chip. The first pad 511 and the second pad 512 are electrically insulated by an insulating portion 53 containing an insulating material. The flip chip mounting is to set the side of the growth substrate opposite to the pad forming surface for forming the electrode upward, so that the growth substrate side is the main light extraction surface. In order to increase the light extraction efficiency of the light emitting device 3, a reflective structure 54 can be set around the light emitting element 1, the light emitting element 2A, or the light emitting element 2B.

[0139] Figure 6 Schematic diagram of a light emitting device 4 according to an embodiment of the present invention. The light emitting device 4 is a bulb lamp including a lampshade 602, a reflector 604, a light emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616 and an electrical connecting element 618. The light emitting module 610 includes a carrier 606 and a plurality of light emitting units 608 located on the carrier 606, wherein the plurality of light emitting units 608 may be the light emitting element 1, the light emitting element 2A, the light emitting element 2B, or the light emitting device 3 in the aforementioned embodiments.

[0140] The embodiments listed in the present invention are only used to illustrate the present invention, and are not used to limit the scope of the present invention. Any obvious modification or change made by anyone to the present invention does not deviate from the spirit and scope of the present invention.

Claims

1. A light emitting element, characterized in that: Include: substrate; an aluminum nitride buffer layer, located on the substrate; A first semiconductor layer, located on the aluminum nitride buffer layer, wherein the first semiconductor layer comprises AlGaN; A semiconductor column is located on the first semiconductor layer, the semiconductor column comprises a second semiconductor layer and an active layer, wherein the active layer emits a UV light; A first contact layer, located on the first semiconductor layer, the first contact layer comprising a first contact portion and a first extension portion, wherein the first extension portion surrounds the semiconductor column; a first electrode contact layer contacting the first contact layer; A second contact layer is located on the second semiconductor layer of the semiconductor column; A second electrode contact layer, contacting the second contact layer, wherein in a top view of the light-emitting element, the second electrode contact layer surrounds a plurality of side walls of the first electrode contact layer; A first insulating layer, located on the first contact layer and the second contact layer, wherein the first insulating layer comprises a first insulating layer first opening located on the first contact portion and a first insulating layer second opening located on the second contact layer; A first electrode covering the first opening of the first insulating layer and electrically connected to the first semiconductor layer; as well as The second electrode covers the second opening of the first insulating layer and is electrically connected to the second semiconductor layer.

2. A light emitting element, characterized in that: Include: substrate; A first semiconductor layer is located on the substrate; A plurality of semiconductor pillars are located on the first semiconductor layer, and the plurality of semiconductor pillars include a second semiconductor layer and an active layer; A first contact layer, located on the first semiconductor layer, wherein the first contact layer comprises a first contact portion located between the plurality of semiconductor pillars; a first electrode contact layer contacting the first contact layer; A second contact layer is located on the second semiconductor layer of the plurality of semiconductor pillars; A second electrode contact layer, contacting the second contact layer, wherein in a top view of the light-emitting element, the second electrode contact layer surrounds a plurality of side walls of the first electrode contact layer; A first insulating layer, located on the first contact layer and the second contact layer, wherein the first insulating layer comprises a first insulating layer first opening located on the first contact portion and a first insulating layer second opening located on the second contact layer; A second insulating layer is located on the first electrode contact layer, the second electrode contact layer and the first insulating layer, and the second insulating layer comprises a second insulating layer first opening and a second insulating layer second opening; A first electrode electrically connected to the first contact portion through the first opening of the first insulating layer and the first opening of the second insulating layer; as well as The second electrode is electrically connected to the second contact layer through the second opening of the second insulating layer.

3. The light-emitting element as described in claim 1 further includes a second insulating layer located on the first electrode contact layer, the second electrode contact layer and the first insulating layer, wherein the second insulating layer includes a second insulating layer first opening and a second insulating layer second opening, the first electrode covers the second insulating layer first opening and is electrically connected to the first semiconductor layer, and the second electrode covers the second insulating layer second opening and is electrically connected to the second semiconductor layer. The light emitting device as claimed in claim 1 , wherein the first contact portion comprises a width greater than a width of the first extending portion. The light-emitting element as claimed in claim 1 , wherein the second contact layer comprises a transparent conductive material. The light emitting element as claimed in claim 5 , wherein a thickness of the second contact layer is in a range of 0.1 nm to 100 nm. 7 . The light-emitting element as claimed in claim 1 , wherein the first electrode contact layer covers the entire first contact layer. 8 . The light-emitting element as claimed in claim 1 , wherein the second electrode contact layer covers all or part of the second contact layer. 9 . The light-emitting element as claimed in claim 1 , wherein in the top view of the light-emitting element, the second electrode contact layer comprises an area larger than an area of ​​the first electrode contact layer.

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