Plasma processing apparatus and system and method of position alignment of edge ring

Abstract

The present invention provides a plasma processing apparatus and system capable of placing an edge ring on a substrate support table with high precision, and a method for aligning the position of an edge ring. The plasma processing apparatus includes a substrate support table that supports a substrate and an edge ring, a lifting mechanism that moves the edge ring in the up-down direction, and a control section, the edge ring has a hole concentric with the edge ring, the substrate support table includes a convex portion that places the substrate and protrudes upward, a ring placement portion that places the edge ring with the convex portion inserted in the hole of the edge ring, and a temperature adjustment mechanism that adjusts the temperature of the convex portion, the hole of the edge ring and the convex portion of the substrate support table have shapes corresponding to each other when viewed from above, and the control section controls the lifting mechanism and the temperature adjustment mechanism to perform: a step of moving the edge ring to a specified position to become a state in which the convex portion of the substrate support table is inserted in the hole of the edge ring; and after the moving step, a step of heating the convex portion of the substrate support table to expand it in the radial direction.

Description

Technical Field

[0001] This invention relates to a plasma processing apparatus, a plasma processing system, and a method for aligning the position of an edge ring. Background Technology

[0002] In the plasma processing apparatus disclosed in Patent Document 1, a focusing ring is provided on the upper surface of the stage in a manner that surrounds the semiconductor wafer. Furthermore, a positioning pin is provided on the stage for positioning the focusing ring at a predetermined position on the stage, and a positioning hole is provided on the focusing ring corresponding to the positioning pin.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-033062 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technology of this invention enables the edge ring to be placed on the substrate support with high precision.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the present invention is a plasma processing apparatus for plasma processing of a substrate, comprising: a substrate support stage supporting a substrate and an edge ring disposed around the substrate; a lifting mechanism for moving the edge ring in a vertical direction; and a control unit, wherein the edge ring has a hole concentric with the edge ring, the substrate support stage comprising: a protrusion that holds the substrate and protrudes upward; a ring mounting section for mounting the edge ring in a state in which the protrusion is inserted into the hole of the edge ring; and a temperature regulating mechanism for regulating the temperature of the protrusion, wherein the hole of the edge ring and the protrusion of the substrate support stage have shapes corresponding to each other when viewed from above, and the control unit controls the lifting mechanism and the temperature regulating mechanism to perform the following steps: moving the edge ring to a predetermined position in a state in which the protrusion of the substrate support stage is inserted into the hole of the edge ring; and after the moving step, heating the protrusion of the substrate support stage to cause it to expand radially.

[0010] Invention Effects

[0011] According to the present invention, the edge ring can be placed on the substrate support with high precision. Attached Figure Description

[0012] Figure 1This is a top view showing the general structure of the plasma processing system according to the first embodiment.

[0013] Figure 2 This is a longitudinal cross-sectional view showing the general structure of the processing module.

[0014] Figure 3 yes Figure 2 A magnified view of a portion of the image.

[0015] Figure 4 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 1.

[0016] Figure 5 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 1.

[0017] Figure 6 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 1.

[0018] Figure 7 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 1.

[0019] Figure 8 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 1.

[0020] Figure 9 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 2.

[0021] Figure 10 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 2.

[0022] Figure 11 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 2.

[0023] Figure 12 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 3.

[0024] Figure 13 This is a partially enlarged cross-sectional view showing the outline structure of the processing module in the second embodiment.

[0025] Figure 14 This is a schematic diagram showing the peripheral state of the wafer support stage during the mounting process of Example 4.

[0026] Explanation of reference numerals in the attached figures

[0027] 60, 60a processing modules

[0028] 80 control device

[0029] 101 wafer support stage

[0030] 103d flow path

[0031] 104a chip carrier

[0032] 104b ring mounting section

[0033] 107 lifting pin

[0034] 114-pin lifting mechanism

[0035] E1 edge ring

[0036] E1a hole

[0037] W chip. Detailed Implementation

[0038] In the manufacturing processes of semiconductor devices, plasma treatment, such as etching, is used on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). This plasma treatment is performed with the substrate placed on a substrate support stage within a depressurized processing container.

[0039] Furthermore, in order to obtain good and uniform plasma processing results in the central and peripheral portions of the substrate, a ring-shaped component (hereinafter referred to as "edge ring") that is configured to surround the substrate on the substrate support table and appears circular when viewed from above is sometimes placed on the substrate support table. When using an edge ring, in order to obtain a uniform processing result in the circumferential direction at the periphery of the substrate, the edge ring needs to be placed at a desired position on the substrate support table. For example, in Patent Document 1, the focusing ring is positioned at a predetermined position on the support table using a positioning hole provided in the focusing ring and a positioning pin provided in the support table.

[0040] Replacement of the edge ring when it is worn out is generally performed by the operator, but replacement using a conveyor device for transporting the edge ring is also considered. In this case, the edge ring is placed on the ring mounting section of the substrate support using the conveyor device. For example, the conveyor device supporting the edge ring is inserted into the processing chamber of the plasma processing apparatus from outside the processing chamber, the edge ring is placed on a lifting pin that rises upward from the ring mounting section of the substrate support, and then the conveyor device is removed from the processing chamber. Next, the lifting pin descends, and the edge ring on the lifting pin is placed on the ring mounting section.

[0041] However, when replacing the edge ring using a conveyor, the aforementioned configuration of positioning holes and pins cannot position the edge ring relative to the substrate support with a conveying accuracy exceeding that of the conveyor. This is because if the difference between the inner diameter of the positioning hole and the diameter of the positioning pin is less than the conveying accuracy for accurate positioning, the positioning pin may not be able to be inserted into the positioning hole, making it impossible to properly mount the edge ring on the substrate support. Furthermore, there are limits to the conveying accuracy of the edge ring conveyor.

[0042] Therefore, the technology of the present invention enables the edge ring to be placed on the substrate support with high precision.

[0043] Hereinafter, the plasma processing apparatus, plasma processing system, and edge ring alignment method of this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional configuration are labeled with the same reference numerals, and repeated descriptions of these elements are omitted.

[0044] (First Implementation)

[0045] Plasma Processing System

[0046] Figure 1 This is a top view showing the general structure of the plasma processing system according to the first embodiment.

[0047] exist Figure 1 In the plasma processing system 1, the wafer W, which serves as a substrate, undergoes plasma processing, such as etching.

[0048] like Figure 1 As shown, the plasma processing system 1 includes an atmospheric section 10 and a depressurization section 11, which are connected as a single unit via load locking modules 20 and 21. The atmospheric section 10 includes an atmospheric module for performing desired processing on the wafer W under atmospheric pressure. The depressurization section 11 includes a processing module 60 for performing desired processing on the wafer W under a depressurized atmosphere (vacuum atmosphere).

[0049] Load locking modules 20 and 21 are configured to connect the loading module 30 included in the atmospheric section 10 and the transport module 50 included in the depressurization section 11 via a gate (not shown). Load locking modules 20 and 21 are configured to temporarily hold the wafer W. Furthermore, load locking modules 20 and 21 are configured to switch the internal atmosphere to atmospheric pressure and depressurization atmosphere.

[0050] The atmospheric section 10 includes: a loading module 30 having a transport device 40 described later; and a loading port 32 for mounting a front-opening wafer transport cassette (FOUP) 31. The front-opening wafer transport cassette 31 can hold multiple wafers W. In addition, the loading module 30 may also be connected to an orienter (not shown) for adjusting the horizontal orientation of the wafers W, a buffer module (not shown) for temporarily storing multiple wafers W, etc.

[0051] The loading module 30 has a rectangular housing, the interior of which is maintained at atmospheric pressure. On one side of the long side constituting the housing of the loading module 30, a plurality of loading ports 32 are arranged side-by-side, for example, five. On the other side of the long side constituting the housing of the loading module 30, load locking modules 20 and 21 are arranged side-by-side.

[0052] A conveying device 40 for conveying wafer W is provided inside the loading module 30. The conveying device 40 includes: a conveying arm 41 supporting wafer W; a rotary table 42 supporting the conveying arm 41 in a rotatable manner; and a base 43 on which the rotary table 42 is mounted. In addition, a guide rail 44 extending in the long side direction of the loading module 30 is provided inside the loading module 30. The base 43 is provided on the guide rail 44, and the conveying device 40 is configured to be movable along the guide rail 44.

[0053] The depressurization unit 11 includes: a transport module 50 for transporting the wafer W and the edge ring E1; a processing module 60 as a plasma processing apparatus for performing desired plasma processing on the wafer W transported from the transport module 50; and a storage module 61 as a storage unit for storing the edge ring E1. The interiors of the transport module 50 and the processing module 60 (specifically, the depressurization transport chamber and the plasma processing chamber 100 described later) are maintained in a depressurized atmosphere, and the interior of the storage module 61 is also maintained in a depressurized atmosphere. For one transport module 50, multiple processing modules 60 are provided, for example, six, and multiple storage modules 61 are provided, for example, two. Furthermore, the number and arrangement of the processing modules 60 are not limited to this embodiment and can be arbitrarily set, requiring only at least one processing module for replacing the edge ring E1. Similarly, the number and arrangement of the storage modules 61 are not limited to this embodiment and can be arbitrarily set, requiring only at least one.

[0054] The transport module 50 includes a depressurized transport chamber with a polygonal (pentagonal in the illustrated example) housing, which is connected to load locking modules 20 and 21. The transport module 50 transports wafers W fed into the load locking module 20 to a processing module 60, and transports wafers W that have undergone desired plasma processing in the processing module 60 to the atmosphere section 10 via the load locking module 21. Furthermore, the transport module 50 transports edge rings E1 from the receiving module 61 to the processing module 60, and sends edge rings E1, which are to be replaced, out of the processing module 60 to the receiving module 61.

[0055] The processing module 60 performs plasma processing on the wafer W, such as etching. Furthermore, the processing module 60 is connected to the transport module 50 via a gate 62. The structure of the processing module 60 will be described later.

[0056] The storage module 61 stores the edge ring E1. Specifically, it stores the edge ring E1 and forms a ring assembly E integrally with the edge ring E1 and the cover ring E2 (described later). Furthermore, the storage module 61 is connected to the conveying module 50 via a gate 63. A heating device 61a is provided in the storage module 61 for heating the edge ring E1. The heating device 61a may have a light-emitting element, for example, and uses light from this element to heat the edge ring E1. The heating method of the heating device 61a is not limited to the above-described method; it may also use a high-temperature gas, etc.

[0057] Inside the depressurized transport chamber of the transport module 50, a transport device 70 is provided for transporting the wafer W and the edge ring E1 (specifically, the ring group E). The transport device 70, like the aforementioned transport device 40, includes: a transport arm 71 that supports the wafer W and the ring group E during transport; a rotary table 72 that rotatably supports the transport arm 71; and a base 73 on which the rotary table 72 is mounted. Furthermore, a guide rail 74 extending along the long side of the transport module 50 is provided inside the transport module 50. The base 73 is mounted on the guide rail 74, and the transport device 70 is configured to move along the guide rail 74.

[0058] In the transport module 50, the transport arm 71 receives the wafer W held in the load locking module 20 and delivers it to the processing module 60. Additionally, the transport arm 71 receives the wafer W held in the processing module 60 and delivers it to the load locking module 21.

[0059] Furthermore, in the conveying module 50, the conveying arm 71 receives the edge ring E1 (specifically, the ring group E) within the receiving module 61 and sends it into the processing module 60. In addition, the conveying arm 71 receives the edge ring E1 (specifically, the ring group E) held within the processing module 60 and sends it out to the receiving module 61.

[0060] Additionally, the plasma processing system 1 includes a control device 80. In one embodiment, the control device 80 processes computer-executable commands that cause the plasma processing system 1 to perform the various steps described herein. The control device 80 is capable of controlling other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, some or all of the control device 80 may also be included in other elements of the plasma processing system 1. The control device 80 may also include, for example, a computer 90. The computer 90 may also include, for example, a processing unit (CPU) 91, a storage unit 92, and a communication interface 93. The processing unit 91 is capable of performing various control actions according to a program stored in the storage unit 92. The storage unit 92 may also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 93 may also communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0061] In addition, the control device 80 also serves as a control unit for controlling the processing module 60, which is a plasma processing device.

[0062] <Wafer Processing in Plasma Processing System 1>

[0063] The following describes the wafer processing performed using the plasma processing system 1 configured as described above.

[0064] First, using the conveyor 40, the wafer W is removed from the desired front-opening wafer delivery box 31 and fed into the load locking module 20. Then, the load locking module 20 is sealed and depressurized. Afterward, the interior of the load locking module 20 is connected to the interior of the conveyor module 50.

[0065] Next, the wafer W is held by the transport device 70 and transported from the load locking module 20 to the transport module 50.

[0066] Next, gate 62 is opened, and the wafer W is fed into the desired processing module 60 using the conveying device 70. Then, gate 62 is closed, and the wafer W is processed as desired in the processing module 60. The processing of the wafer W in this processing module 60 will be described later.

[0067] Next, gate 62 is opened, and the wafer W is sent out from processing module 60 using conveyor 70. Then, gate 62 is closed.

[0068] Next, the wafer W is fed into the load locking module 21 using the conveying device 70. After the wafer W is fed into the load locking module 21, the load locking module 21 is sealed and opened to the atmosphere. Afterward, the interior of the load locking module 21 is connected to the interior of the loading module 30.

[0069] Next, the transport device 40 holds the wafer W and sends it from the load locking module 21 back to the desired front-opening wafer transport box 31 for storage via the loading module 30. Thus, a series of wafer processing steps in the plasma processing system 1 are completed.

[0070] <Processing Module 60>

[0071] Next, use Figure 2 and Figure 3 The processing module 60 will be described below. Figure 2 This is a longitudinal cross-sectional view showing the general structure of the processing module 60. Figure 3 yes Figure 2 A magnified view of a portion of the image.

[0072] like Figure 2 As shown, the processing module 60 includes a plasma processing chamber 100 as a processing container, a gas supply unit 120, an RF (Radio Frequency) power supply unit 130, and an exhaust system 140. Furthermore, the processing module 60 includes a wafer support stage 101 as a substrate support stage and an upper electrode 102.

[0073] The wafer support stage 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured as a pressure-reducing plasma processing chamber 100. The upper electrode 102 is disposed above the wafer support stage 101 and functions as part of the ceiling of the plasma processing chamber 100.

[0074] The wafer support stage 101 is configured to support the wafer W and the edge ring E1 (specifically, the ring group E) in the plasma processing space 100s. In one embodiment, the wafer support stage 101 includes a base 103, an electrostatic chuck 104, a foot 105, a lifting pin 106, and a lifting pin 107.

[0075] The base 103 functions as a lower electrode. Additionally, the base 103 secures the electrostatic chuck 104 and supports the insulating ring 103c. The base 103 is formed, for example, of a conductive metal such as aluminum.

[0076] The base 103 has a fixing portion 103a at its center for fixing the electrostatic chuck 104, and a mounting portion 103b at its periphery, which mounts the insulating ring 103c supporting the cover ring E2. The upper surface of the fixing portion 103a is higher than the upper surface of the mounting portion 103b. In this embodiment, the fixing portion 103a and the mounting portion 103b of the base 103 are formed integrally.

[0077] Furthermore, a flow path 103d for temperature-regulating fluid, serving as a temperature-regulating mechanism, is formed inside the base 103 (specifically, inside the fixing part 103a). Temperature-regulating fluid is supplied from a cooling unit (not shown) located outside the plasma processing chamber 100. The temperature-regulating fluid supplied to the flow path 103d returns to the cooling unit. By circulating, for example, low-temperature brine, in the flow path 103d, the wafer support 101, the wafer W placed on the wafer support 101, and the edge ring E1 can be cooled to a predetermined temperature. Alternatively, by circulating, for example, high-temperature brine as the temperature-regulating fluid in the flow path 103d, the wafer support 101, the wafer W placed on the wafer support 101, and the edge ring E1 can be cooled to a predetermined temperature.

[0078] The fixing part 103a is formed in a cylindrical shape, and its diameter is approximately the same as that of the annular mounting part 104b of the electrostatic chuck 104, which will be described later.

[0079] The mounting portion 103b is formed in the shape of a circular plate.

[0080] The insulating ring 103c is a ring-shaped component when viewed from above, and is made of a material with high thermal and electrical insulation properties. The inner diameter of the insulating ring 103c is slightly larger than the diameter of the fixing part 103a of the base 103, and the outer diameter of the insulating ring 103c is approximately the same as the outer diameter of the mounting part 103b of the base 103.

[0081] When the ring assembly E, which is formed by integrating the edge ring E1 and the cover ring E2, is placed on the wafer support stage 101, the insulating ring 103c supports the cover ring E2.

[0082] Both edge ring E1 and cover ring E2 are circular components when viewed from above.

[0083] The edge ring E1 is configured to surround the wafer W placed on the electrostatic chuck 104. The edge ring E1 is annular when viewed from above, and therefore has a circular hole E1a concentric with the edge ring E1. The material of the edge ring E1 is, for example, conductive silicon (Si) or silicon carbide (SiC).

[0084] The inner diameter of the edge ring E1 is formed to be slightly larger than the outer diameter of the wafer mounting portion 104a of the electrostatic chuck 104 (described later), for example, it is formed to be greater than 0.3 to 0.8 mm.

[0085] The cover ring E2 covers the outer surface of the edge ring E1 and forms an integral part of the edge ring E1 during conveying and raising / lowering, becoming ring assembly E. The cover ring E2 is made of, for example, a material with high thermal insulation and electrical insulation properties.

[0086] The outer diameter of the cover ring E2 is larger than that of the edge ring E1, while its inner diameter is larger than that of the edge ring E1 but smaller than its outer diameter. Furthermore, the inner diameter of the cover ring E2 is slightly larger than the outer diameter of the ring mounting portion 104b and the fixing portion 103a of the base 103 of the electrostatic chuck 104 (described later). Moreover, the difference between the inner diameter of the cover ring E2 and the outer diameter of the ring mounting portion 104b is greater than the difference between the inner diameter of the edge ring E1 and the outer diameter of the wafer mounting portion 104a. Therefore, when the electrostatic chuck 104 expands, it first contacts the edge ring E1, not the cover ring E2, thus avoiding contact with the cover ring E2.

[0087] When the ring group E is in the state of being integrated with the edge ring E1, the cover ring E2 partially overlaps with the edge ring E1 when viewed from above, supporting the edge ring E1 from below.

[0088] like Figure 3 As shown, an annular protrusion E2a, concentric with the cover ring E2, is formed on the upper surface of the cover ring E2. Furthermore, an annular recess E1b, concentric with the edge ring E1, is formed at a position corresponding to the annular protrusion E2a of the edge ring E1, engaging with the annular protrusion E2a. The engagement of the annular protrusion E2a and the annular recess E1b prevents, for example, free radicals from intruding into the wafer W side from the gap between the edge ring E1 and the cover ring E2 during plasma processing.

[0089] An electrostatic chuck 104 is provided on the fixing part 103a of the base 103, and uses electrostatic force to hold the wafer W and the edge ring E1 together.

[0090] The electrostatic chuck 104 has a wafer mounting portion 104a in the center for mounting a wafer W, and a ring mounting portion 104b in the periphery for mounting an edge ring E1. The upper surface of the wafer mounting portion 104a is higher than the upper surface of the ring mounting portion 104b.

[0091] In other words, the electrostatic chuck 104 has an upwardly protruding convex portion (corresponding to the upper part of the wafer mounting portion 104a) for mounting the wafer W and an annular mounting portion 104b disposed around the convex portion. Furthermore, the annular mounting portion 104b holds the aforementioned convex portion (i.e., the upper part of the wafer mounting portion 104a) inserted into the hole E1a of the edge ring E1.

[0092] The aforementioned protrusion of the electrostatic chuck 104 (i.e., the upper part of the wafer mounting portion 104a) and the hole E1a of the edge ring E1 have shapes that correspond to each other when viewed from above. In this embodiment, since the hole E1a of the edge ring E1 is circular as described above, the aforementioned protrusion of the electrostatic chuck 104 (i.e., the upper part of the wafer mounting portion 104a) when viewed from above is, for example, a circular shape.

[0093] An electrode 108 for holding the wafer W by electrostatic adsorption is provided in the wafer placement portion 104a of the electrostatic chuck 104, and an electrode 109 for holding the edge ring E1 by electrostatic adsorption is provided in the ring placement portion 104b. The wafer placement portion 104a and the ring placement portion 104b have a structure in which the electrodes 108 and 109 are sandwiched between insulating materials made of insulating material.

[0094] A DC voltage from a DC power supply (not shown) is applied to electrode 108. The resulting electrostatic force is used to adhere and hold the wafer W in the wafer mounting portion 104a. Similarly, a DC voltage from a DC power supply (not shown) is applied to electrode 109. The resulting electrostatic force is used to adhere and hold the edge ring E1 in the ring mounting portion 104b.

[0095] In addition, the wafer mounting portion 104a is formed, for example, into a cylindrical shape with a diameter smaller than that of the wafer W. When the wafer W is mounted on the wafer mounting portion 104a, the peripheral portion of the wafer W extends out from the wafer mounting portion 104a.

[0096] Furthermore, the edge ring E1 has a step formed on its upper part, and the upper surface of the outer periphery is formed to be higher than the upper surface of the inner periphery. The inner periphery of the edge ring E1 is formed to extend into the lower side of the periphery of the wafer W extending from the wafer mounting portion 104a. That is, the inner diameter of the edge ring E1 is formed to be smaller than the outer diameter of the wafer W.

[0097] The ring mounting portion 104b is formed, for example, in the shape of a circular plate, with an outer diameter larger than the inner diameter of the edge ring E1 and smaller than the outer diameter of the edge ring E1. When the edge ring E1 is mounted on the ring mounting portion 104b, the periphery of the edge ring E1 extends out from the ring mounting portion 104b.

[0098] In addition, a step is formed on the upper part of the cover ring E2, and the upper surface of the outer periphery is formed to be higher than the upper surface of the inner periphery. The inner periphery of the cover ring E2 is formed to extend into the lower side of the periphery of the edge ring E1 extending from the ring mounting part 104b.

[0099] Although not shown in the figures, a gas supply hole is formed in the wafer mounting section 104a to supply heat transfer gas to the back side of the wafer W mounted thereon. Similarly, a gas supply hole is formed in the ring mounting section 104b to supply heat transfer gas to the back side of the edge ring E1 mounted thereon. Heat transfer gas from a gas supply section (not shown) is supplied through these gas supply holes. The gas supply section may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply section is configured, for example, to supply heat transfer gas from the gas source to the heat transfer gas supply hole via the pressure controller.

[0100] In this embodiment, the electrostatic chuck 104 is configured such that the wafer mounting portion 104a and the ring mounting portion 104b are integrated into one unit.

[0101] The foot 105 is a cylindrical component made of an insulating material such as ceramic, which supports the base 103. For example, the foot 105 is formed to have an outer diameter equal to the outer diameter of the base 103, supporting the periphery of the base 103.

[0102] like Figure 2 As shown, the lifting pin 106 is a columnar member that moves up and down by extending from and retracting into the upper surface of the wafer mounting portion 104a of the electrostatic chuck 104, and is made of, for example, ceramic. Three or more lifting pins 106 are provided at intervals along the circumference of the electrostatic chuck 104, specifically along the circumference of the upper surface of the wafer mounting portion 104a. The lifting pins 106 are provided at equal intervals along the aforementioned circumference. The lifting pins 106 are provided in a manner that extends in the vertical direction.

[0103] The lifting pin 106 is connected to a pin lifting mechanism 110 that raises and lowers the lifting pin 106. The pin lifting mechanism 110 includes, for example, a support member 111 that supports a plurality of lifting pins 106; and a drive unit 112 that generates a driving force to raise and lower the support member 111, thereby raising and lowering the plurality of lifting pins 106. The drive unit 112 has a drive assembly or drive mechanism (e.g., an actuator, motor, and / or other device) that generates the aforementioned driving force.

[0104] The lifting pin 106 is inserted into a through hole 113 that extends downward from the upper surface of the wafer mounting portion 104a of the electrostatic chuck 104 to the bottom surface of the base 103. In other words, the through hole 113 is formed in such a way that it passes through the wafer mounting portion 104a and the base 103 of the electrostatic chuck 104.

[0105] The upper end face of the lifting pin 106 supports the back side of the chip W when the lifting pin 106 rises.

[0106] The lifting pin 107 is a columnar component that moves up and down by extending from and retracting into the upper surface of the annular mounting portion 104b of the electrostatic chuck 104. It is made of materials such as alumina, quartz, or SUS. Three or more lifting pins 107 are spaced apart from each other along the circumference of the electrostatic chuck 104, specifically along the circumference of the upper surface of the annular mounting portion 104b. The lifting pins 107 are arranged at equal intervals along the aforementioned circumference. The lifting pins 107 extend in the vertical direction.

[0107] The lifting pin 107 is connected to the pin lifting mechanism 114 that drives the lifting pin 107. The pin lifting mechanism 114 includes, for example, a support member 115 supporting a plurality of lifting pins 107; and a drive unit 116 that generates a driving force to raise and lower the support member 115, thereby raising and lowering the plurality of lifting pins 107. The drive unit 116 has a drive assembly or drive mechanism (e.g., actuator, motor, and / or other device) that generates the aforementioned driving force.

[0108] The lifting pin 107 is inserted into a through hole 117 that extends downward from the upper surface of the insulating ring 103c, which is placed on the mounting portion 103b of the base 103, to the bottom surface of the base 103. In other words, the through hole 117 is formed in such a way that it passes through the insulating ring 103c and the mounting portion 103b of the base 103.

[0109] The lifting pin 107, as described above, is a connecting component that supports and raises / lowers the edge ring E1 (specifically, ring group E) that connects the processing module 60 and the conveying module 50. The upper end face of the lifting pin 107 forms the lower surface of the ring group E2 that supports the ring group E.

[0110] In addition, the lifting pin 107 and the pin lifting mechanism 114 constitute a lifting mechanism that moves the edge ring E1 (specifically the ring group E) in the vertical direction, i.e., lifts and lowers it.

[0111] The upper electrode 102 also functions as a spray head for supplying one or more process gases from the gas supply unit 120 to the plasma processing space 100s. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 120 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply one or more process gases from the gas inlet 102a through the gas diffusion chamber 102b and the plurality of gas outlets 102c to the plasma processing space 100s.

[0112] The gas supply unit 120 may also include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply one or more process gases from their respective gas sources 121 to the gas inlet 102a via their respective flow controllers 122. Each flow controller 122 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 120 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more process gases.

[0113] The RF power supply unit 130 is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as the base 103 (lower electrode), the upper electrode 102, or both the base 103 and the upper electrode 102. This generates plasma from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 130 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in a plasma processing chamber. The RF power supply unit 130 includes, for example, two RF generation units 131a and 131b and two matching circuits 132a and 132b. In one embodiment, the RF power supply unit 130 is configured to supply a first RF signal from the first RF generation unit 131a via the first matching circuit 132a to the base 103 (lower electrode). For example, the first RF signal may have a frequency in the range of 27MHz to 100MHz.

[0114] In another embodiment, the RF power supply unit 130 is configured to supply a second RF signal from the second RF generation unit 131b to the base 103, which serves as the lower electrode, via the second matching circuit 132b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit 131b.

[0115] Furthermore, although the illustrations are omitted, other embodiments can be considered in this invention. For example, in an alternative embodiment, the RF power supply unit 130 may be configured to supply a first RF signal from the RF generation unit to the base 103, which serves as the lower electrode, a second RF signal from another RF generation unit to the base 103, which serves as the lower electrode, and a third RF signal from yet another RF generation unit to the base 103, which serves as the lower electrode. Additionally, in other alternative embodiments, a DC voltage may be applied to the upper electrode 102.

[0116] Additionally, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may also include the process of pulsed RF signal amplitude between an on state and an off state, or between two or more different on states.

[0117] The exhaust system 140 can be connected, for example, to an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 140 may include a pressure valve and a vacuum pump. The vacuum pump may also include a turbomolecular pump, a roughing pump, or a combination thereof.

[0118] <Chip processing in processing module 60>

[0119] Next, an example of wafer processing performed using the processing module 60 will be described. Furthermore, in the processing module 60, processes such as etching and film deposition are performed on the wafer W.

[0120] First, a wafer W is fed into the plasma processing chamber 100, and the wafer W is placed on an electrostatic chuck 104 by raising and lowering the lifting pin 106. Then, a DC voltage is applied to the electrodes 108 of the electrostatic chuck 104, thereby electrostatically attracting and holding the wafer W in the electrostatic chuck 104. Furthermore, after the wafer W is fed in, the vacuum system 140 is used to reduce the pressure inside the plasma processing chamber 100 to a predetermined vacuum level.

[0121] Next, processing gas is supplied to the plasma processing space 100s from the gas supply unit 120 via the upper electrode 102. Furthermore, high-frequency electrical power HF for plasma generation is supplied to the base 103, which serves as the lower electrode, from the RF power supply unit 130, thereby exciting the processing gas and generating plasma. At this time, high-frequency electrical power LF for ion attraction can also be supplied from the RF power supply unit 130. Then, plasma processing is performed on the wafer W under the action of the generated plasma.

[0122] When plasma processing ends, the supply of high-frequency power HF from the RF power supply unit 130 and the supply of processing gas from the gas supply unit 120 are stopped. If high-frequency power LF is supplied during plasma processing, the supply of high-frequency power LF is also stopped. Next, the application of DC voltage to electrode 108 is stopped, and the adsorption and holding of wafer W using electrostatic chuck 104 is stopped.

[0123] Next, the wafer W is raised using the lifting pin 106, causing it to detach from the electrostatic chuck 104. During this detachment, the wafer W can also undergo a de-energization process. Then, the wafer W is ejected from the plasma processing chamber 100, completing the wafer processing sequence.

[0124] <Example 1 of installation processing>

[0125] Next, use Figures 4-8 This describes an example of the mounting process of installing the edge ring E1 into the processing module 60 using the plasma processing system 1 described above, which includes the process of aligning the edge ring E1 relative to the wafer support stage 101. Figures 4-8 This diagram schematically illustrates the peripheral state of the wafer support stage 101 during the mounting process in this example. Furthermore, in subsequent diagrams, black arrows on the right indicate the expansion of each component due to heating, and white arrows on the left indicate the contraction of each component due to cooling.

[0126] In the aforementioned alignment process, specifically, a concentricity process is performed to bring the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 close to the central axis of the edge ring E1. Furthermore, the following process is performed in a vacuum atmosphere under the control of the control device 80.

[0127] (Step S1: Conveying the edge ring E1)

[0128] First, the edge ring E1 stored in the storage module 61 is transported to the processing module 60, which is the object to be installed on the edge ring E1.

[0129] Specifically, the conveying arm 71 of the conveying device 70 holds the ring assembly E within the receiving module 61. Next, the conveying arm 71, holding the ring assembly E, is inserted via the feed inlet / outlet (not shown) into the depressurized plasma processing chamber 100 of the processing module 60, which is the object of the installation described above. Then, the ring assembly E held by the conveying arm 71 is conveyed above the ring mounting portion 104b located at the periphery of the electrostatic chuck 104. Next, the lifting pin 107 is raised, transferring the ring assembly E from the conveying arm 71 to the lifting pin 107. Afterward, the conveying arm 71 is withdrawn from the plasma processing chamber 100, i.e., the conveying arm 71 is withdrawn.

[0130] (Step S2: Descent of edge ring E1)

[0131] Next, as Figure 4 As shown, the edge ring E1 is lowered so that the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is inserted into the hole E1a of the edge ring E1.

[0132] Specifically, the lifting pin 107, which is received from the conveyor arm 71 and ring group E, is lowered.

[0133] (Step S3: The edge ring E1 moves to the specified position)

[0134] Next, as Figure 5 As shown, the edge ring E1 is moved to a predetermined position in which the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is inserted into the hole E1a that becomes the edge ring E1.

[0135] Specifically, for example, the lifting pin 107, which receives the ring assembly E from the transport arm 71, is lowered until the edge ring E1 reaches the aforementioned predetermined position. This predetermined position is, for example, a position where the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is inserted into the hole E1a of the edge ring E1, and the edge ring E1 is spaced apart from the upper surface of the ring mounting portion 104b. The distance from the bottom surface of the edge ring E1 to the ring mounting portion 104b at this predetermined position is such that the edge ring E1 and the ring mounting portion 104b can be vacuum-insulated, for example, 0.3 to 1 mm.

[0136] Additionally, during the period from step S1 to step S3, the temperature of the edge ring E1 and the electrostatic chuck 104 is at room temperature (e.g., 25°C).

[0137] (Step S4: Expansion of the convex portion)

[0138] After step S3, as Figure 6 As shown, the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is heated and expanded. During this expansion, when the edge ring E1 is eccentric relative to the wafer mounting portion 104a, the protrusion abuts against the edge ring E1 at the predetermined position. Subsequently, as expansion continues, the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 approaches the central axis of the edge ring E1 as it expands.

[0139] More specifically, a high-temperature fluid flows through the flow path 103d of the base 103, heating the entire wafer support 101, including the wafer mounting portion 104a containing the electrostatic chuck 104, causing the wafer mounting portion 104a to expand. At this time, even though the entire wafer support 101 is heated, the edge ring E1, being located at the aforementioned predetermined position, is separated from the ring mounting portion 104b and is therefore not heated. During this expansion, if the edge ring E1 is eccentric relative to the wafer mounting portion 104a, the wafer mounting portion 104a (specifically its side surface) abuts against the edge ring E1 at the aforementioned predetermined position from the inner circumferential surface of the forming hole E1a. After abutment, the high-temperature fluid continues to flow through the flow path 103d of the base 103, heating the wafer mounting portion 104a and causing it to expand. As a result, the edge ring E1 is pushed by the wafer mounting portion 104a and moves on the cover ring E2. As a result, the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 is close to the central axis of the edge ring E1.

[0140] This step, for example, ends when a predetermined time has elapsed since the fluid began flowing from the high temperature.

[0141] In this step, for example, the wafer mounting section 104a is heated to 100°C or higher. Furthermore, if simply flowing a high-temperature fluid through the flow path 103d is insufficient to adequately heat the wafer mounting section 104a and prevent it from expanding sufficiently, other heating mechanisms with higher heating capacity may be provided in addition to or in place of the flow path 103d. These other heating mechanisms may be, for example, resistance heaters, provided in the electrostatic chuck 104.

[0142] (Step S5: Contraction of the convex part)

[0143] After the step of expanding the convex portion in step S4, as... Figure 7 As shown, heating of the protrusion (i.e., the upper part of the wafer mounting portion 104a) of the wafer support stage 101 is stopped, and the protrusion is cooled so that it shrinks radially.

[0144] Specifically, the flow of the high-temperature fluid phase in the flow path 103d of the base 103 is stopped, and the wafer mounting portion 104a is cooled to room temperature, for example, causing it to shrink radially. Therefore, in step S4, even when the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) abuts against the edge ring E1, a gap can be formed between the protrusion and the edge ring E1. Thus, it is possible to prevent the concentrically treated edge ring E1 from rubbing against the protrusion and causing positional displacement or particle generation when the edge ring E1 is lowered in the subsequent steps. Alternatively, this step can be omitted. Furthermore, if omitted, at least one of the side surfaces of the protrusion (i.e., the upper part of the wafer mounting portion 104a) and the inner circumferential surface of the edge ring E1 can be pre-covered with lubricating material.

[0145] Furthermore, when cooling the protrusion of the wafer support stage 101 in this step, a low-temperature fluid can also flow in the flow path 103d of the base 103. As a result, the wafer mounting portion 104a can be cooled to the desired temperature in a short time.

[0146] (Step S6: Placement of edge ring E1)

[0147] After cooling the electrostatic chuck 104, as Figure 8 As shown, the edge ring E1 is lowered and placed on the ring placement part 104b.

[0148] Specifically, the lifting pin 107 supporting the ring assembly E is lowered, the edge ring E1 is placed on the ring mounting portion 104b, and the cover ring E2 is placed on the insulating ring 103c on the mounting portion 103b. Then, a DC voltage from a DC power supply (not shown) is applied to the electrode 109 provided on the ring mounting portion 104b, and the resulting electrostatic force is used to adhere the edge ring E1 to the upper surface of the ring mounting portion 104b.

[0149] Thus, the installation of a series of edge rings E1 was completed.

[0150] Through the above installation process, regardless of the conveying accuracy of the edge ring E1 by the conveying device 70, the edge ring E1 can be placed on the ring mounting portion 104b with a roughly equal gap (for example, a gap of 0.1 to 0.2 mm) between the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) and the edge ring E1 throughout the circumference.

[0151] Furthermore, the removal process of the edge ring E1 (specifically, the ring group E) is the same as the known process of removing the wafer W from the wafer support stage 101 using the lifting pin 106, so its description is omitted.

[0152] <Example 2 of installation processing>

[0153] Next, use Figures 9-11 Another example of the installation process for edge ring E1 will be described. Figures 9-11 This diagram schematically illustrates the peripheral state of the wafer support stage 101 during the mounting process in this example. Furthermore, the following processes are performed in a vacuum atmosphere under the control of the control device 80.

[0154] First, the edge ring E1 of step S1 above is transported.

[0155] (Step S1a: contraction of the convex portion)

[0156] Next, before the step of lowering the edge ring E1 in step S2, as follows: Figure 9 As shown, the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is cooled to shrink it radially.

[0157] Specifically, a low-temperature fluid flows through the flow path 103d of the base 103 to cool the entire wafer support stage 101, which includes the wafer mounting section 104a containing the electrostatic chuck 104, causing the wafer mounting section 104a to shrink.

[0158] Next, the edge ring E1 in step S2 is lowered. During this descent, the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) is contracted through the steps in step S1a. Therefore, even if the accuracy of the handover position of the edge ring E1 (specifically, the ring group E) to the lifting pin 107 is poor in the transport step of step S1, the edge ring E1 can be prevented from touching the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) in the descent step of this step S2.

[0159] (in step S2a)

[0160] Next, before the step of moving the edge ring E1 of step S3 to the specified position, as follows: Figure 10 As shown, the edge ring E1 is placed on the ring mounting portion 104b and cooled to cause it to shrink radially.

[0161] Specifically, the lifting pin 107 supporting the ring assembly E is lowered, placing the edge ring E1 on the ring mounting portion 104b, and the cover ring E2 on the insulating ring 103c on the mounting portion 103b. Then, a DC voltage from a DC power supply (not shown) is applied to the electrode 109 provided on the ring mounting portion 104b, and the resulting electrostatic force is used to adhere and hold the edge ring E1 to the upper surface of the ring mounting portion 104b. Furthermore, a low-temperature fluid is circulated in the flow path 103d of the base 103 to cool the entire wafer support stage 101, including the electrostatic chuck 104, in the ring mounting portion 104b. Additionally, a heat transfer gas is supplied to the back side of the edge ring E1. This causes the edge ring E1 to cool and shrink.

[0162] Next, the step of moving the edge ring E1 from step S3 to a predetermined position is performed. Specifically, by stopping the application of DC voltage to electrode 109, releasing the adsorption and holding of edge ring E1, and also stopping the supply of heat transfer gas, the lifting pin 107 is raised. Thus, edge ring E1 (specifically ring group E) is transferred to the lifting pin 107. Then, the lifting pin 107 is raised until edge ring E1 reaches the aforementioned predetermined position.

[0163] Then, as Figure 11 As shown, the step of expanding the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) in step S4 described above is performed. During this expansion, the edge ring E1 is contracted through step S2a described above. Therefore, even if the amount of expansion of the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) in step S4 is small, the eccentricity of the edge ring E1 relative to the wafer mounting portion 104a can be corrected more significantly. In other words, even if the heating capacity of the flow path 103d, which serves as the temperature control mechanism, is low, the eccentricity of the edge ring E1 relative to the wafer mounting portion 104a can be corrected more significantly.

[0164] Next, the step of cooling the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) in step S5 above to shrink it radially is performed, and the step of mounting the edge ring E1 on the ring mounting portion 104b is performed.

[0165] Thus, the installation of a series of edge rings E1 was completed.

[0166] <Example 3 of installation processing>

[0167] Next, use Figure 12 Other examples of the installation process for edge ring E1 are illustrated. Figure 12 This diagram schematically illustrates the peripheral state of the wafer support stage 101 during the mounting process in this example. Furthermore, the following processes are performed in a vacuum atmosphere under the control of the control device 80.

[0168] The installation process in this example is the same as in Examples 1 and 2 of the aforementioned installation processes, and the step of conveying the edge ring E1 in step S1 is performed.

[0169] In Example 2 of the installation process, the edge ring E1 housed in the storage module 61 is transported to the processing module 60 at room temperature. In contrast, in this example, as... Figure 12 As shown, the edge ring E1 stored in the storage module 61 is transported to the processing module 60 in a state of being heated to a high temperature above room temperature and expanding.

[0170] Specifically, the heating device 61a heats the ring assembly E within the receiving module 61. The heated ring assembly E is held by the conveying arm 71 of the conveying device 70. Next, the conveying arm 71 holding the ring assembly E is inserted into the depressurized plasma processing chamber 100 of the processing module 60, which is the object of the installation, via the inlet / outlet (not shown). Then, the ring assembly E held by the conveying arm 71 is conveyed above the ring mounting portion 104b. Next, the lifting pin 107 is raised, transferring the ring assembly E from the conveying arm 71 to the lifting pin 107. Afterward, the conveying arm 71 is withdrawn from the plasma processing chamber 100, i.e., the conveying arm 71 is withdrawn.

[0171] The subsequent processing is the same as in Example 1 or Example 2 of the aforementioned installation process. That is, in this example, the edge ring E1 expands during the step of lowering the edge ring E1 in step S2. Therefore, even if the accuracy of the handover position of the edge ring E1 (specifically, the ring group E) to the lifting pin 107 is poor in the transport step of step S1, it is possible to prevent the edge ring E1 from touching the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) in the lowering step of step S2.

[0172] Furthermore, by combining the step of expanding the edge ring E1 in advance as in this example with the step of shrinking the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) in advance as in step S1a in Example 2 of the aforementioned mounting process, it is possible to more reliably prevent the edge ring E1 from colliding.

[0173] As described above, in the edge ring alignment of this embodiment, the edge ring E1 is moved to a predetermined position in which the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) is inserted into the hole E1a of the edge ring E1. Then, the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) is heated to cause it to expand radially. Therefore, even if the edge ring E1 is eccentric relative to the wafer mounting portion 104a, the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 can be brought close to the central axis of the edge ring E1. That is, eccentricity can be corrected. Therefore, according to this embodiment, regardless of the transport accuracy of the edge ring E1 transported by the transport device 70, the edge ring E1 can be placed on the wafer support 101 with high precision.

[0174] In this embodiment, the edge ring E1 is configured to move vertically while being integrally formed with the cover ring E2 during installation, using the cover ring E2. The technology of the present invention is not limited to this configuration; it can also be configured such that a single edge ring E1 moves vertically during installation. However, when correcting the eccentricity of the edge ring E1 relative to the wafer mounting portion 104a, in the former configuration, the edge ring E1 moves on the cover ring E2 supported by the lifting pin 107; conversely, in the latter configuration, the edge ring E1 moves on the lifting pin 107. Therefore, the former configuration can more smoothly correct the aforementioned eccentricity.

[0175] Furthermore, in the position alignment of the edge ring E1 in this embodiment, the base 103 is not used as a reference, but the electrostatic chuck 104 on which the wafer W to be processed is mounted is used as a reference for position alignment. Therefore, even if the electrostatic chuck is fixed with an offset relative to the base 103, the positional relationship between the electrostatic chuck 104 and the edge ring E1 can be made appropriate.

[0176] (Second Implementation)

[0177] <Processing Module 60a>

[0178] Figure 13 This is a partially enlarged cross-sectional view showing the outline structure of the processing module in the second embodiment.

[0179] exist Figure 13 In the processing module 60a, the electrostatic chuck 104 is composed of a wafer mounting portion 104a and a ring mounting portion 104b.

[0180] Furthermore, the fixing part 103a is separately constructed from a first fixing part 201 for fixing the wafer mounting part 104a of the electrostatic chuck 104 and a second fixing part 202 for fixing the ring mounting part 104b. Moreover, a first flow path 201a for temperature-regulating fluid is formed in the first fixing part 201, and a second flow path 202a for temperature-regulating fluid is formed in the second fixing part 202. The flow of temperature-regulating fluid to the first flow path 201a and the flow of temperature-regulating fluid to the second flow path 202a are controlled independently of each other. The second flow path 202a constitutes a temperature regulation mechanism that regulates the temperature of the ring mounting part 104b independently of the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting part 104a). On the other hand, the first flow path 201a constitutes another temperature regulation mechanism that regulates the temperature of the aforementioned protrusion (i.e., the upper part of the wafer mounting part 104a) independently of the temperature of the ring mounting part 104b.

[0181] To improve the heat insulation between the wafer mounting portion 104a and the ring mounting portion 104b, a heat insulation portion 211 made of heat insulation material may be provided between them. Similarly, to improve the heat insulation between the first fixing portion 201 and the second fixing portion 202, a heat insulation portion 212 made of heat insulation material may be provided between them.

[0182] When using the processing module 60a, the installation of the edge ring E1 can be performed in the same way as when using the processing module 60a of the first embodiment. For example, even when using the processing module 60a, the edge ring E1 can be installed using the aforementioned installation processes in Examples 1 to 3. Furthermore, in this case, in the step of heating the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) in step S4 to expand it radially, the ring mounting portion 104b can be placed on the ring mounting portion 104b without heating it. In other words, the "predetermined position" of the edge ring E1 in the step of expanding the protrusion of the wafer support 101 (i.e., the upper part of the wafer mounting portion 104a) in step S4 can be a position where it is placed on the ring mounting portion 104b, rather than a position spaced apart from the ring mounting portion 104b.

[0183] However, in the step of expanding the protrusion of the wafer support stage 101 (i.e. the upper part of the wafer mounting portion 104a) in step S4, by separating the edge ring E1 from the ring mounting portion 104b, it is possible to prevent the effect of friction between the edge ring E1 and the ring mounting portion 104b when the edge ring E1 is pushed and moved by the protrusion.

[0184] Furthermore, in the step of expanding the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) in step S4, when the edge ring E1 is placed on the ring mounting portion 104b, the following can also be described. That is, in the step of expanding the protrusion of the wafer support stage 101 in step S4, the temperature of the ring mounting portion 104b using the second flow path 202a can be controlled so that the edge ring E1 placed on the ring mounting portion 104b is cooled and shrinks radially. Specifically, while a high-temperature fluid flows in the first flow path 201a to heat and expand the wafer mounting portion 104a, a low-temperature fluid flows in the second flow path 202a to cool the ring mounting portion 104b and cool and shrink the edge ring E1 placed on the ring mounting portion 104b.

[0185] <Example 4 of installation processing>

[0186] Next, use Figure 14 This illustrates an example of the installation process for the edge ring E1, which is specific to the use of the processing module 60a. Figure 14 This diagram schematically illustrates the peripheral state of the wafer support stage 101 during the mounting process in this example. Furthermore, the following processes are performed in a vacuum atmosphere under the control of the control device 80.

[0187] First, the edge ring E1 in step S1 is transported and the edge ring E1 in step S2 is lowered. Alternatively, similar to step S1a in Example 2 of the aforementioned mounting process, the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a) can be cooled and caused to shrink radially before the edge ring E1 is lowered in step S2.

[0188] (Step S3': Placement of edge ring E1)

[0189] Next, the edge ring E1 is moved, and with the wafer inserted into the protrusion of the support stage 101 (i.e., the upper part of the wafer mounting part 104a) in the hole E1a of the edge ring E1, the edge ring E1 is placed on the ring mounting part 104b.

[0190] Specifically, the lifting pin 107, which receives the ring group E from the conveying arm 71, is lowered until the edge ring E1 is placed on the ring placement part 104b.

[0191] (Step S4: Expansion of the convex part)

[0192] After step S3, as Figure 14As shown, the ring mounting portion 104b on which the edge ring E1 is placed is cooled, thereby cooling the edge ring E1 and causing it to shrink radially. More specifically, a low-temperature fluid flows in the first flow path 201a of the first fixing portion 201 of the base 103, and only the ring mounting portion 104b is cooled, without cooling the wafer mounting portion 104a of the electrostatic chuck 104, and the edge ring E1 placed on the ring mounting portion 104b is cooled. When it shrinks in this way, when the edge ring E1 is eccentric relative to the wafer mounting portion 104a, the edge ring E1 abuts against the protrusion of the wafer support stage 101 (i.e., the upper part of the wafer mounting portion 104a). Thereafter, if the shrinkage continues, the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 approaches the central axis of the edge ring E1 as it shrinks.

[0193] This step, for example, ends when a predetermined time has elapsed since the fluid began flowing from a low temperature.

[0194] Thus, the installation of a series of edge rings E1 was completed.

[0195] As described above, according to this embodiment, when the edge ring E1 is eccentric relative to the wafer mounting portion 104a, the central axis of the wafer mounting portion 104a of the electrostatic chuck 104 can be brought close to the central axis of the edge ring E1. That is, eccentricity can be corrected. Therefore, according to this embodiment, regardless of the transport accuracy of the edge ring E1 transported with the transport device 70, the edge ring E1 can be placed on the wafer support stage 101 with high precision.

[0196] <Variation Example>

[0197] In the above example, the heating device 61a for heating the edge ring E1 is located inside the housing module 61, but it can also be located outside the housing module 61. Furthermore, the heating of the edge ring E1 can also be performed by the temperature control mechanism of the processing module 60, which does not undergo plasma treatment.

[0198] In addition, in the above example, the edge ring E1 is housed in the housing module 61 connected to the transport module 50, but it can also be housed in the front-opening wafer transport box placed in the loading port 32 in the same way as the wafer W.

[0199] The above descriptions illustrate various illustrative embodiments, but the implementation is not limited to these illustrative embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

Claims

1. A plasma processing apparatus for plasma processing of a substrate, characterized in that, include: A substrate support stage that supports a substrate and an edge ring disposed around the substrate; A lifting mechanism that moves the edge ring in the vertical direction; and Control Department The edge ring has a hole concentric with the edge ring. The substrate support stage includes: a protrusion that holds the substrate and protrudes upward; a ring-mounted portion that holds the edge ring in a state where the protrusion is inserted into the hole of the edge ring; and a temperature regulating mechanism that regulates the temperature of the protrusion. The hole in the edge ring and the protrusion of the substrate support have shapes that correspond to each other when viewed from above. The control unit controls the lifting mechanism and the temperature regulating mechanism, enabling the following steps to be performed: The first moving step involves moving the edge ring to a predetermined position where the protrusion of the substrate support is inserted into the hole of the edge ring; and The second moving step, which follows the first moving step, involves heating the protrusion of the substrate support stage to cause it to expand radially, thereby bringing the protrusion into contact with the edge ring and using the protrusion to move the contacting edge ring.

2. The plasma processing apparatus as described in claim 1, characterized in that: The control unit controls the lifting mechanism and the temperature regulating mechanism, enabling the following steps to be performed: The step of lowering the edge ring to insert the protrusion of the substrate support into the hole of the edge ring; and Prior to the descent step, the protrusion of the substrate support is cooled to cause it to shrink radially.

3. The plasma processing apparatus as described in claim 1 or 2, characterized in that: The temperature regulating mechanism regulates the temperature of the protrusion of the substrate support platform and the temperature of the annular mounting portion. The control unit controls the temperature regulating mechanism to perform the following steps: prior to the first moving step, placing the edge ring on the ring placement part and cooling the edge ring to cause it to shrink radially.

4. The plasma processing apparatus as described in claim 1, characterized in that: The substrate support platform includes other temperature regulating mechanisms that independently regulate the temperature of the annular mounting portion, separate from the temperature of the protrusion. The specified position is the location where the edge ring is placed on the ring mounting portion. In the second moving step, the control unit controls the other temperature regulating mechanism so that the edge ring placed on the ring mounting portion is cooled and shrinks radially.

5. The plasma processing apparatus as described in claim 1 or 2, characterized in that: The specified position is the position where the edge ring is spaced apart from the ring mounting portion. The control unit controls the lifting mechanism to perform the following steps: after the second moving step, lowering the edge ring from the predetermined position and placing it on the ring placement part.

6. The plasma processing apparatus as described in claim 5, characterized in that: The control unit controls the temperature adjustment mechanism to perform the following steps: after the second moving step and before the placing step, stopping the heating of the protrusion of the substrate support stage and cooling the protrusion to cause it to shrink radially.

7. The plasma processing apparatus as described in claim 1 or 2, characterized in that: The lifting mechanism allows the edge ring to move vertically while it is integrated with the cover ring, which has a larger outer and inner diameter compared to the edge ring.

8. A plasma processing apparatus for plasma processing of a substrate, characterized in that, include: A substrate support stage that supports a substrate and an edge ring disposed around the substrate; A lifting mechanism that moves the edge ring in the vertical direction; and Control Department The edge ring has a hole concentric with the edge ring. The substrate support stage includes: a protrusion that holds the substrate and protrudes upward; an annular support portion that holds the edge ring in a state where the protrusion is inserted into the hole of the edge ring; and a temperature regulating mechanism that regulates the temperature of the annular support portion independently of the temperature of the protrusion. The hole in the edge ring and the protrusion of the substrate support have shapes that correspond to each other when viewed from above. The control unit controls the lifting mechanism and the temperature regulating mechanism, enabling the following steps to be performed: The steps are: moving the edge ring, placing the edge ring on the ring mounting portion with the protrusion of the substrate support inserted into the hole; and... After the placement step, the ring placement portion on which the edge ring is placed is cooled to cool the edge ring and shrink radially, thereby causing the protrusion of the substrate support to abut against the edge ring and moving the edge ring abutting against the protrusion relative to the protrusion during the shrinkage.

9. The plasma processing apparatus as described in claim 8, characterized in that: The substrate support platform includes other temperature adjustment mechanisms that independently control the temperature of the protrusion, separate from the temperature of the annular mounting portion. The control unit controls the lifting mechanism and the other temperature regulating mechanisms, enabling the following steps to be performed: The step of lowering the edge ring to insert the protrusion of the substrate support into the hole in the edge ring; and Prior to the descent step, the protrusion of the substrate support is cooled to cause it to shrink radially.

10. A plasma processing system, characterized in that, include: The plasma processing apparatus as described in any one of claims 1 to 9; A receiving portion for accommodating the edge ring; A heating device for heating the edge ring; A conveying device for conveying the edge ring; and Control device, The control device controls the heating device and the conveying device to perform the following steps: conveying the edge ring housed in the housing portion to the plasma processing device in a heated and radially expanded state.

11. A method for aligning an edge ring, wherein the edge ring disposed around a substrate is aligned relative to a substrate support supporting the substrate and the edge ring, the method being characterized in that: The edge ring has a hole at its center that is concentric with the edge ring. The substrate support stage includes: a protrusion that holds the substrate and protrudes upward; and a ring mounting portion that mounts the edge ring while the protrusion is inserted into the hole of the edge ring. The hole in the edge ring and the protrusion of the substrate support have shapes that correspond to each other when viewed from above. The position alignment method includes: The step of moving the edge ring to a predetermined position in which the protrusion of the substrate support is inserted into the hole of the edge ring; and Following the moving step, the protrusion of the substrate support is heated to expand radially, thereby causing the protrusion to abut against the edge ring and the edge ring abutting against the expanding protrusion to move.

12. A method for aligning an edge ring, wherein the edge ring disposed around a substrate is aligned relative to a substrate support supporting the substrate and the edge ring, the method being characterized in that: The edge ring has a hole concentric with the edge ring. The substrate support stage includes: a protrusion that holds the substrate and protrudes upward; and a ring mounting portion that mounts the edge ring while the protrusion is inserted into the hole of the edge ring. The hole in the edge ring and the protrusion of the substrate support have shapes that correspond to each other when viewed from above. The position alignment method includes: The steps are: moving the edge ring, placing the edge ring on the ring mounting portion with the protrusion of the substrate support inserted into the hole; and... After the placement step, the ring placement portion on which the edge ring is placed is cooled to cool the edge ring and shrink radially, thereby causing the protrusion of the substrate support to abut against the edge ring and moving the edge ring abutting against the protrusion relative to the protrusion during the shrinkage.

Images