Display device

Abstract

A display device includes a lower substrate including a display area and a transmissive area; first to third pixel electrodes located in the display area; an intermediate layer having an opening corresponding to the transmissive area; a counter electrode located above the intermediate layer and having an opening corresponding to the transmissive area; an upper substrate including a first area corresponding to the first pixel electrode, a second area corresponding to the second pixel electrode, a third area corresponding to the third pixel electrode, and a fourth area corresponding to the transmissive area; a light-transmissive layer located in the first area; a second color quantum dot layer located in the second area; a third color quantum dot layer located in the third area; and a light-transmissive material layer located in the fourth area and formed in one body with the light-transmissive layer.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0151117, filed on November 12, 2020, which is incorporated herein by reference for all purposes, as fully set forth herein. Technical Field

[0003] One or more embodiments relate to display devices, and more specifically, to display devices having high luminous efficiency. Background Technology

[0004] The display device visually displays data. This type of display device can be used as a display for small products such as mobile phones, or as a display for large products such as televisions.

[0005] A display device includes multiple pixels that receive electrical signals and emit light externally for displaying images. Each of the multiple pixels may include a light-emitting diode (LED). For example, in the case of an organic light-emitting display device, each pixel includes an organic light-emitting diode as the LED. Generally, an organic light-emitting display device typically includes a thin-film transistor formed on a substrate and an organic light-emitting diode that is the display element, and the organic light-emitting diode emits light itself. As the applications of display devices have diversified, various design efforts have been made to improve the quality of display devices.

[0006] The information disclosed in this section is only for understanding the background of the inventive concept and may therefore contain information that does not form prior art. Summary of the Invention

[0007] Display devices based on related technologies may have relatively low luminous efficiency. Therefore, one or more embodiments provide a display device capable of having relatively high luminous efficiency.

[0008] Other aspects will be set forth in the following detailed description and will be apparent in part from this disclosure, or may be learned by practicing the inventive concept.

[0009] According to one or more embodiments, a display device includes a lower substrate, first to third pixel electrodes, an intermediate layer, a counter electrode, an upper substrate, a light-transmitting layer, a second color quantum dot layer, a third color quantum dot layer, and a light-transmitting material layer. The lower substrate includes a display area and a transmissive area. The first to third pixel electrodes are located above the lower substrate in the display area. The intermediate layer includes an emission layer stacked above each of the first to third pixel electrodes. The intermediate layer has an opening corresponding to the transmissive area. The counter electrode is located above the intermediate layer. The counter electrode has an opening corresponding to the transmissive area. The upper substrate has a lower surface located above the lower substrate and facing the lower substrate. The upper substrate includes a first region corresponding to the first pixel electrode, a second region corresponding to the second pixel electrode, a third region corresponding to the third pixel electrode, and a fourth region corresponding to the transmissive area. The light-transmitting layer is located in the first region between the upper substrate and the counter electrode. The second color quantum dot layer is located in the second region between the upper substrate and the counter electrode. The third color quantum dot layer is located in the third region between the upper substrate and the counter electrode. The light-transmitting material layer is located in the fourth region between the upper substrate and the lower substrate. The light-transmitting material layer is integrally formed with the light-transmitting layer.

[0010] According to one or more embodiments, a display device includes a lower substrate, first to third pixel electrodes, an intermediate layer, a counter electrode, an upper substrate, a dam, a light-transmitting layer, a second color quantum dot layer, a third color quantum dot layer, and a light-transmitting material layer. The lower substrate includes a transmissive region. The first to third pixel electrodes are located above the lower substrate. The intermediate layer includes an emission layer stacked above each of the first to third pixel electrodes. The intermediate layer has an opening corresponding to the transmissive region. The counter electrode is located above the intermediate layer. The counter electrode has an opening corresponding to the transmissive region. The upper substrate has a lower surface located above the lower substrate and facing the lower substrate. The upper substrate includes a first region corresponding to the first pixel electrode, a second region corresponding to the second pixel electrode, a third region corresponding to the third pixel electrode, and a fourth region corresponding to the transmissive region. The dam is located between the upper substrate and the counter electrode. The dam has a first opening corresponding to the first region, a second opening corresponding to the second region, a third opening corresponding to the third region, and a fourth opening corresponding to the fourth region. The light-transmitting layer fills the first opening. The second color quantum dot layer fills the second opening. The third color quantum dot layer fills the third opening. The light-transmitting material layer fills the fourth opening.

[0011] The preceding general description and the following detailed description are illustrative and explanatory, and are intended to provide further explanation of the claimed subject matter. Attached Figure Description

[0012] The accompanying drawings, included to provide a further understanding of the inventive concept and incorporated in and forming part of this specification, illustrate embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept. In the drawings:

[0013] Figure 1This is a schematic perspective view of a portion of a display device according to an embodiment;

[0014] Figure 2 This is a schematic side view of a portion of a display device according to an embodiment;

[0015] Figure 3 This is a schematic side view of a portion of a display device according to an embodiment;

[0016] Figure 4 This is a schematic cross-sectional view of a portion of a display device according to an embodiment;

[0017] Figure 5 This is a schematic cross-sectional view of a portion of a display device according to an embodiment;

[0018] Figure 6 This is a schematic cross-sectional view of a portion of an intermediate layer included in a display device according to an embodiment;

[0019] Figure 7 This is a schematic cross-sectional view of a portion of an intermediate layer included in a display device according to an embodiment;

[0020] Figure 8A , Figure 8B , Figure 8C and Figure 8D It is a plan view schematically showing the layout of pixels included in a display device according to various embodiments;

[0021] Figure 9 This is a schematic cross-sectional view of a portion of a display device including a transmissive area according to an embodiment;

[0022] Figure 10 This is a schematic cross-sectional view of a portion of a display device including a transmissive area according to an embodiment;

[0023] Figure 11 This is a schematic cross-sectional view of a portion of a display device, with the component located below it, according to an embodiment;

[0024] Figure 12 This is a schematic cross-sectional view of a portion of a display device including a first reflective layer according to an embodiment;

[0025] Figure 13 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment;

[0026] Figure 14 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment;

[0027] Figure 15This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment;

[0028] Figure 16 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment;

[0029] Figure 17 This is a schematic plan view of a portion of the sensor electrode layer included in a display device according to an embodiment;

[0030] Figure 18 According to the embodiments along Figure 17 A cross-sectional view of a portion of the display device taken by the cross-section line XVIII-XVIII';

[0031] Figure 19 According to the embodiments Figure 18 A schematic plan view of a portion of the first conductive layer;

[0032] Figure 20 According to the embodiments Figure 18 A schematic plan view of a portion of the second conductive layer;

[0033] Figure 21 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment;

[0034] Figure 22 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment;

[0035] Figure 23 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment; and

[0036] Figure 24 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment. Detailed Implementation

[0037] In the following description, numerous specific details are set forth for purposes of explanation in order to provide a thorough understanding of the various embodiments. As used herein, the terms “embodiment” and “implementation” are used interchangeably and are non-limiting examples employing one or more of the inventive concepts disclosed herein. However, it will be apparent that the various embodiments may be practiced without these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, the various embodiments may be different, but are not necessarily exclusive. For example, the specific shape, configuration, and characteristics of an embodiment may be used or implemented in another embodiment without departing from the inventive concept.

[0038] Unless otherwise specified, the embodiments shown are to be understood as providing example features of different details of some embodiments. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions, aspects, etc. (hereinafter individually or collectively referred to as “elements”) of the various illustrations may be combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0039] In the accompanying drawings, the use of crosshairs and / or shading is generally provided to clarify the boundaries between adjacent elements. Therefore, unless otherwise specified, the presence or absence of crosshairs or shading does not convey or indicate a preference or requirement for a particular material, material properties, dimensions, scale, commonalities between illustrated elements, and / or any other characteristics, properties, etc., of the elements. Furthermore, in the drawings, the dimensions and relative dimensions of elements may be enlarged for clarity and / or descriptive purposes. Therefore, the dimensions and relative dimensions of individual elements are not necessarily limited to those shown in the figures. When embodiments can be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order of their description. Similarly, the same reference numerals always refer to the same elements.

[0040] When referring to an element as being "on" or "connected to" or "attached to" another element, such as a layer, the element may be directly on or connected to the other element, or an intermediary element may be present. However, when referring to an element as being "directly on" or "directly connected to" or "attached to" another element, an intermediary element is not present. Other terms and / or phrases used to describe relationships between elements should be interpreted similarly, such as "located between" versus "directly located between," "adjacent" versus "directly adjacent," and so on. Furthermore, the term "connection" can refer to physical, electrical, and / or fluid connections. Additionally, the X, Y, and Z axes are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the X, Y, and Z axes can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, for example, such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the listed associated items.

[0041] While the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of this disclosure.

[0042] Spatially relative terms, such as “below,” “under,” “below,” “above,” “above,” “higher,” and “side” (e.g., as in “sidewall”), may be used herein for illustrative purposes and thereby to describe the relationship of one element to another(s) as shown in the figures. Spatially relative terms are intended to cover different orientations of the device in use, operation, or manufacture, other than those depicted in the figures. For example, if the device in the figures is flipped, the element described as “below” or “under” other elements or features will be oriented “above” those elements or features. Thus, the term “below” can encompass both above and below orientations. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or otherwise), and therefore, the spatially relative descriptive language used herein should be interpreted accordingly.

[0043] The terminology used herein is intended to describe some embodiments and is not intended to be limiting. As used herein, the singular forms “a” and “the (described)” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, the terms “comprising” and / or “including” as used herein specify the presence of the described features, integrals, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. It should also be noted that, as used herein, the terms “substantially,” “about,” and other similar terms are used as approximate terms rather than terms of degree, and are therefore used to account for the inherent biases of measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0044] Various embodiments are described herein with reference to schematic cross-sectional views, isometric views, perspective views, plan views, and / or exploded views that are idealized embodiments and / or intermediate structures. Therefore, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Consequently, the embodiments disclosed herein should not be construed as limited to specific illustrated shapes of regions, but rather include deviations in shape due to, for example, manufacturing processes. Therefore, the regions illustrated in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and are therefore not intended to be limiting.

[0045] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field, and not as having an idealized or overly formal meaning, unless such definition is explicitly given herein.

[0046] In accordance with the conventions of the art, embodiments are described in the form of functional blocks, units, and / or modules, and some are illustrated in the accompanying drawings. Those skilled in the art will understand that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuitry such as logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, and wiring connections, which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. Where blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and / or software. It is also contemplated that each block, unit, and / or module may be implemented by dedicated hardware, or as a combination of dedicated hardware performing some functions and processors (e.g., one or more programmed microprocessors and associated electronic circuitry) performing other functions. Furthermore, each block, unit, and / or module of some embodiments may be physically separated into two or more interactive and discrete blocks, units, and / or modules without departing from the inventive concept. Furthermore, some embodiments of blocks, units, and / or modules can be physically combined into more complex blocks, units, and / or modules without departing from the inventive concept.

[0047] The various embodiments will be explained in detail below with reference to the accompanying drawings.

[0048] Figure 1 This is a schematic perspective view of a portion of a display device according to an embodiment.

[0049] refer to Figure 1 The display device 1 according to the embodiment may include a light-emitting display area DA and a non-light-emitting peripheral area PA. The lower substrate 100 included in the display device 1 (see...) Figure 2 It can include the area corresponding to the display area DA and the area corresponding to the peripheral area PA.

[0050] Figure 1 The case shown is that the display area DA of the display device 1 is rectangular; however, the shape of the display area DA can be any arbitrary shape such as a circle, an ellipse or a polygon.

[0051] In the display area DA, a pixel PX can be located at the intersection between a scan line extending in the X-axis direction and a data line extending in the Y-axis direction. Each pixel PX may include pixel circuitry connected to the scan line and the data line, as well as a light-emitting diode connected to the pixel circuitry.

[0052] The peripheral area PA can be outside the display area DA; for example, the peripheral area PA can surround at least a portion of the display area DA. For instance, the peripheral area PA can surround the entire display area DA. Various lines used to transmit electrical signals to the display area DA can be located in the peripheral area PA. A portion of the circuitry used to control the electrical signals applied to the display area DA can be located in the peripheral area PA.

[0053] The peripheral area PA may include a pad area located on one side thereon. A pad unit comprising multiple pads may be located within the pad area. The multiple pads included in the pad unit can receive signals input through the printed circuit board (PCB) via pads that are respectively connected to the PCB. For this purpose, the pad unit may include multiple pads. The multiple pads may be exposed without being covered by an insulating layer and may be electrically connected to the PCB, etc.

[0054] According to an embodiment, the display device 1 may include a component 40 located on one side thereof (see...). Figure 11 Component 40 may be an electronic element that uses (e.g., detects, outputs, etc.) light or sound. For example, the electronic element may be at least one of a sensor that receives and uses light (like an infrared sensor), a camera that receives light and captures an image, a sensor that outputs and senses light or sound to measure distance or identify fingerprints, a small light that outputs light, and a speaker that outputs sound.

[0055] An organic light-emitting display device is shown as an example and will now be described as display device 1 according to an embodiment. However, the display device according to various embodiments is not limited thereto. For example, display device 1 according to some embodiments may be an inorganic light-emitting display or a quantum dot light-emitting display, etc. For example, the emitting layer of the display element included in display device 1 may include organic materials or may include inorganic materials. Display device 1 may include quantum dots, include organic materials and quantum dots, or include inorganic materials and quantum dots.

[0056] Figure 2 This is a schematic side view of a portion of a display device according to an embodiment. Figure 3 This is a schematic side view of a portion of a display device according to an embodiment.

[0057] refer to Figure 2According to an embodiment, the display device 1 may include a display unit DU and a color filter unit CU located on the display unit DU, for example, opposite to the display unit DU. The display unit DU may include a plurality of pixels. For example, the display unit DU may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. The first pixel PX1, the second pixel PX2, and the third pixel PX3 may be pixels that emit light of different colors, and may be disposed on a lower substrate 100. According to an embodiment, the first pixel PX1 may emit a first color light La, the second pixel PX2 may emit a second color light Lb, and the third pixel PX3 may emit a third color light Lc. For example, the first color light La may be blue light, the second color light Lb may be green light, and the third color light Lc may be red light.

[0058] Each pixel may include a light-emitting diode, including an organic light-emitting diode (OLED). For example, a first pixel PX1 may include a first light-emitting diode OLED1, a second pixel PX2 may include a second light-emitting diode OLED2, and a third pixel PX3 may include a third light-emitting diode OLED3. The first pixel PX1 may include the first light-emitting diode OLED1, the second light-emitting diode OLED2, and the third light-emitting diode OLED3. According to an embodiment, the first to third light-emitting diodes OLED1, OLED2, and OLED3 may emit a first color light La, such as blue light. According to another embodiment, the first to third light-emitting diodes OLED1, OLED2, and OLED3 may emit a first color light La, a second color light Lb, and a third color light Lc, respectively. According to yet another embodiment, the first to third light-emitting diodes OLED1, OLED2, and OLED3 may emit a mixture of the first color light La and the second color light Lb, such as a mixture of blue light and green light.

[0059] The color filter unit CU may include first to third color filter portions 400a, 400b and 400c. Light beams emitted by the first to third light-emitting diodes OLED1, OLED2 and OLED3 can pass through the first to third color filter portions 400a, 400b and 400c, and thus can emit a first color light La, a second color light Lb and a third color light Lc.

[0060] The first to third color filter portions 400a, 400b, and 400c can be located (e.g., directly on) the upper substrate 400. In this case, when the first to third color filter portions 400a, 400b, and 400c are "directly located on the upper substrate 400," this can mean that the first to third color filter portions 400a, 400b, and 400c are directly formed on the upper substrate 400 to manufacture the color filter unit CU. The display unit DU and the color filter unit CU can be combined in such a way that the first to third color filter portions 400a, 400b, and 400c face the first to third light-emitting diodes OLED1, OLED2, and OLED3, respectively. Figure 2 In this configuration, the display unit DU and the color filter unit CU are bonded together by an adhesive layer ADH. The adhesive layer ADH can be, but is not limited to, an optically clear adhesive (OCA). According to some embodiments, the adhesive layer ADH can be omitted.

[0061] According to another embodiment, such as Figure 3 As shown, the first to third color filter portions 400a, 400b, and 400c can be directly arranged on the display unit DU. When the first to third color filter portions 400a, 400b, and 400c are "directly arranged on the display unit DU," this can mean that the first to third color filter portions 400a, 400b, and 400c are directly stacked on the display unit DU and integrated with the display unit DU into a single structure without manufacturing the color filter unit CU separately, as shown. Figure 3 As shown in the diagram. For example, the color filter unit CU can be formed through a process that is continuous with the display unit DU.

[0062] In this case, the first to third color filter sections 400a, 400b and 400c can be located in the encapsulation layer 160 (see Figure 4 In some cases where the "other layer" is located between the first to third color filter portions 400a, 400b, and 400c and the encapsulation layer 160, the first to third color filter portions 400a, 400b, and 400c may be formed on the "other layer". The "other layer" may be an organic layer, an inorganic layer, a conductive layer, or a composite layer thereof.

[0063] For reference only. Figure 4 and Figure 5 , Figures 9 to 16 as well as Figures 21 to 24 The display unit DU and color filter unit CU are as follows: Figure 2 The display device 1 shown is based on the combination of elements as illustrated, but the same applies to the color filter portion therein, as will be described later. Figure 3 The structure is stacked on the display unit DU as shown in the diagram.

[0064] Figure 4This is a schematic cross-sectional view of a portion of a display device according to an embodiment. Figure 5 This is a schematic cross-sectional view of a portion of a display device according to an embodiment.

[0065] The display device according to the embodiment may include a lower substrate 100, a light-emitting diode located on the lower substrate 100, an upper substrate 400, and a color filter portion located on the lower surface of the upper substrate 400 facing the lower substrate 100.

[0066] The lower substrate 100 may comprise glass, metal, and / or polymer resin. When the lower substrate 100 is flexible or bendable, the upper substrate 400 may comprise a polymer resin such as at least one selected from polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and cellulose acetate propionate. The lower substrate 100 may have a multilayer structure comprising two layers, each comprising a polymer resin, and a barrier layer comprising an inorganic material (e.g., at least one selected from silicon oxide, silicon nitride, and silicon oxynitride) located between the two layers. Various modifications can be made in this manner.

[0067] A first light-emitting diode, including a first pixel electrode 311, is located on the lower substrate 100. A first thin-film transistor 210 electrically connected to the first light-emitting diode may be located on the lower substrate 100 together with the first light-emitting diode. Figure 4 As shown, the first light-emitting diode being electrically connected to the first thin-film transistor 210 means that the first pixel electrode 311 of the first light-emitting diode is electrically connected to the first thin-film transistor 210.

[0068] The first thin-film transistor 210 may include: a first semiconductor layer 211 comprising amorphous silicon, polycrystalline silicon, organic semiconductor material, or oxide semiconductor material; a first gate electrode 213; a first source electrode 215a; and a first drain electrode 215b. The first gate electrode 213 may comprise any of various conductive materials and may have any of various stacked structures. For example, the first gate electrode 213 may comprise a molybdenum (Mo) layer and an aluminum (Al) layer. In this case, the first gate electrode 213 may have a Mo / Al / Mo stacked structure. Alternatively, the first gate electrode 213 may comprise titanium nitride (TiN). X The first source electrode 215a and the first drain electrode 215b may comprise any of a variety of conductive materials and may have any of a variety of layered structures. For example, each of the first source electrode 215a and the first drain electrode 215b may comprise a Mo layer, an Al layer, and / or a copper (Cu) layer. In this case, each of the first source electrode 215a and the first drain electrode 215b may have a Ti / Al / Ti layered structure.

[0069] To ensure insulation between the first semiconductor layer 211 and the first gate electrode 213, a gate insulating layer 121 may be located between the first semiconductor layer 211 and the first gate electrode 213. The gate insulating layer 121 may comprise an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride. An interlayer insulating layer 131 may be located on the first gate electrode 213 and may comprise an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride. A first source electrode 215a and a first drain electrode 215b may be located on the interlayer insulating layer 131. The insulating layer comprising such an inorganic material may be formed via chemical vapor deposition (CVD) or atomic layer deposition (ALD). This also applies to the embodiments and modifications thereof described later.

[0070] The buffer layer 110 may be located between the first thin-film transistor 210 having this structure and the lower substrate 100, and may comprise an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride. The buffer layer 110 may improve the smoothness of the upper surface of the lower substrate 100 and / or prevent or minimize impurities from penetrating from the lower substrate 100 into the first semiconductor layer 211 of the first thin-film transistor 210.

[0071] The planarization layer 140 can be located on the first thin-film transistor 210. For example, when... Figure 4 When the OLED, which serves as the first light-emitting diode, is positioned above the first thin-film transistor 210, the planarization layer 140 can planarize the upper portion of the protective layer covering the first thin-film transistor 210. The planarization layer 140 may include organic materials such as acrylic acid, benzocyclobutene (BCB), and / or hexamethyldisiloxane (HMDSO). Although in Figure 4 The planarization layer 140 is a single layer, but it can be modified in various ways. For example, the planarization layer 140 can be a multi-layer stack.

[0072] The first light-emitting diode can be located on the planarization layer 140 of the lower substrate 100. Figure 4 In this configuration, the OLED, serving as the first light-emitting diode, is located on the planarization layer 140. The first light-emitting diode located in the first pixel PX1 may have a first pixel electrode 311, a counter electrode 330, and a first color emitting layer EML located between the first pixel electrode 311 and the counter electrode 330 (see [link to OLED configuration]). Figure 6 The middle layer of the OLED is 320. (For example...) Figure 4As shown, the first pixel electrode 311 is in contact with one of the first source electrode 215a and the first drain electrode 215b via an opening formed in the planarization layer 140, and is electrically connected to the first thin-film transistor 210. The first pixel electrode 311 may include a light-transmitting conductive layer formed of a light-transmitting conductive oxide such as indium tin oxide (ITO), indium trioxide (In2O3), or indium zinc oxide (IZO) and a reflective layer formed of a metal such as Al or silver (Ag), but the embodiments are not limited thereto. For example, the first pixel electrode 311 may have a three-layer structure of ITO / Ag / ITO.

[0073] The intermediate layer 320, including the first color emission layer EML, can have a shape patterned to correspond to the first pixel electrode 311. However, as Figure 4 As shown, the intermediate layer 320 may also be located on the second pixel electrode 312 and the third pixel electrode 313 positioned on the lower substrate 100, and therefore may be integrally formed across the first to third pixel electrodes 311 to 313. The counter electrode 330 on the intermediate layer 320 may also be integrally formed across the first to third pixel electrodes 311 to 313. The counter electrode 330 may include a light-transmitting conductive layer formed of, for example, ITO, In2O3, or IZO, and may also include a semi-transparent layer comprising a metal such as Al or Ag. For example, the counter electrode 330 may be a semi-transparent layer comprising magnesium (Mg) and Ag.

[0074] The pixel defining layer 150 may be located on the planarization layer 140. The pixel defining layer 150 defines each pixel by including an opening corresponding to each pixel, for example, an opening that exposes the central portion of the first pixel electrode 311. Figure 4 In the case shown, the pixel defining layer 150 prevents arcing or the like from occurring at the edge of the first pixel electrode 311 by increasing the distance between the edge of the first pixel electrode 311 and the counter electrode 330. The pixel defining layer 150 may include organic materials such as polyimide or HMDSO, but the embodiments are not limited thereto.

[0075] Intermediate layer 320 may comprise low-molecular-weight or high-molecular-weight materials. When intermediate layer 320 comprises low-molecular-weight materials, it may have a single-layer or multi-layer stacked structure comprising at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emitter layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL), and may be formed via, for example, vacuum deposition. When intermediate layer 320 comprises high-molecular-weight materials, it may have a structure comprising an HTL and an EML. In this case, the HTL may comprise poly(3,4-ethylenedioxythiophene) (PEDOT), and the EML may comprise high-molecular-weight materials such as polyphenylenevinyl chloride (PPV) or polyfluorene, but the embodiments are not limited thereto. Intermediate layer 320 may be formed via screen printing, inkjet printing, deposition, or laser-induced thermal imaging (LITI), etc. Intermediate layer 320 is not limited to the structures described above and may have any of a variety of other structures. According to an embodiment, intermediate layer 320 may further comprise a plurality of EMLs and a charge generation layer (CGL) located between the EMLs. Please refer to later Figure 6 and Figure 7 Provide a detailed description.

[0076] As described above, the intermediate layer 320 may include an integrally formed layer covering the first to third pixel electrodes 311, 312, and 313. However, in some cases, the intermediate layer 320 may include a layer patterned corresponding to each of the first to third pixel electrodes 311, 312, and 313. In any case, the intermediate layer 320 includes a first color emission layer EML (see...). Figure 6 The first color emitting layer EML can be integrally formed to cover the first to third pixel electrodes 311, 312, and 313, or in some cases can be patterned corresponding to each of the first to third pixel electrodes 311, 312, and 313. The first color emitting layer EML can emit light in a first wavelength band. For example, the first color emitting layer EML can emit light with a wavelength ranging from approximately 450 nm to approximately 495 nm.

[0077] Since the OLEDs described above are susceptible to damage from external moisture or oxygen, they can be covered and protected by the encapsulation layer 160. The encapsulation layer 160 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer 160 may include a first inorganic encapsulation layer 161, an organic encapsulation layer 162, and a second inorganic encapsulation layer 163.

[0078] The first inorganic encapsulation layer 161 may cover the counter electrode 320 and may include silicon oxide, silicon nitride, and / or silicon oxynitride. Other layers, such as a capping layer, may be located between the first inorganic encapsulation layer 161 and the counter electrode 330. Since the first inorganic encapsulation layer 161 is formed according to the structure beneath it and therefore has an uneven upper surface, the organic encapsulation layer 162 may be formed to cover the first inorganic encapsulation layer 161 to provide a flat upper surface. The organic encapsulation layer 162 may include at least one material selected from polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane, but the embodiments are not limited thereto. The second inorganic encapsulation layer 163 may cover the organic encapsulation layer 162 and may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0079] Even if a crack occurs in the encapsulation layer 160, at least due to the aforementioned multilayer structure, the encapsulation layer 160 can prevent the crack from connecting between the first inorganic encapsulation layer 161 and the organic encapsulation layer 162 and / or between the organic encapsulation layer 162 and the second inorganic encapsulation layer 163. Therefore, the formation of external moisture or oxygen, etc., through its permeation into the OLED can be prevented or minimized.

[0080] like Figure 4 As shown, a display device according to some embodiments may include a second light-emitting diode located in a second pixel PX2. For example... Figure 4 As shown, the second light-emitting diode (LED) can be an OLED having a second pixel electrode 312, a counter electrode 330, and an intermediate layer 320 located between the second pixel electrode 312 and the counter electrode 330, including a first color emitting layer EML. In addition to the second LED, a second thin-film transistor 220 electrically connected to the second LED can also be located on the lower substrate 100. For example... Figure 4 As shown, the second light-emitting diode being electrically connected to the second thin-film transistor 220 means that the second pixel electrode 312 of the second light-emitting diode is electrically connected to the second thin-film transistor 220. The second thin-film transistor 220 may include: a second semiconductor layer 221 comprising amorphous silicon, polycrystalline silicon, organic semiconductor material, or oxide semiconductor material; a second gate electrode 223; a second source electrode 225a; and a second drain electrode 225b. The description of the second pixel electrode 312 and the second thin-film transistor 220 can be similar to the above description of the first pixel electrode 311 and the first thin-film transistor 210, and therefore can be omitted.

[0081] like Figure 4 As shown, a display device according to some embodiments may include a third light-emitting diode located in a third pixel PX3. For example... Figure 4As shown, the third light-emitting diode can be an OLED having a third pixel electrode 313, a counter electrode 330, and an intermediate layer 320 located between the third pixel electrode 313 and the counter electrode 330, including a first color emitting layer EML. In addition to the third light-emitting diode, a third thin-film transistor 230 electrically connected to the third light-emitting diode can also be located on the lower substrate 100. For example... Figure 4 As shown, the third light-emitting diode being electrically connected to the third thin-film transistor 230 means that the third pixel electrode 313 of the third light-emitting diode is electrically connected to the third thin-film transistor 230. The third thin-film transistor 230 may include: a third semiconductor layer 231 comprising amorphous silicon, polycrystalline silicon, organic semiconductor material, or oxide semiconductor material, a third gate electrode 233, a third source electrode 235a, and a third drain electrode 235b. The description of the third pixel electrode 313 and the third thin-film transistor 230 can be similar to the above description of the first pixel electrode 311 and the first thin-film transistor 210, and therefore can be omitted.

[0082] The upper substrate 400 may be located above the lower substrate 100, such that the lower surface of the upper substrate 400 faces the lower substrate 100, for example, facing the upper surface of the lower substrate 100. The upper substrate 400 may be positioned such that the first to third pixel electrodes 311, 312, and 313 are located between the upper substrate 400 and the lower substrate 100. The upper substrate 400 may include a polymer resin. For example, the upper substrate 400 may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and / or cellulose acetate propionate.

[0083] The upper substrate 400 may have a multilayer structure comprising two layers, each comprising a polymer resin, and a barrier layer comprising an inorganic material (e.g., silicon oxide, silicon nitride, and / or silicon oxynitride, etc.) located between the two layers. Various modifications can be made in this manner. The upper substrate 400 may have flexible or bendable properties.

[0084] The upper substrate 400 has a first region A1 corresponding to the first pixel electrode 311, a second region A2 corresponding to the second pixel electrode 312, and a third region A3 corresponding to the third pixel electrode 313. The phrase "corresponds to" means that they overlap when viewed in a direction perpendicular to the upper surface of the upper substrate 400 (e.g., the Z-axis direction). In other words, when viewed in a direction perpendicular to the upper surface of the upper substrate 400, the first region A1 overlaps with the first pixel electrode 311, the second region A2 overlaps with the second pixel electrode 312, and the third region A3 overlaps with the third pixel electrode 313.

[0085] The color filter portion may be located on the lower surface of the upper substrate 400 in a direction toward the lower substrate 100 (e.g., the -Z-axis direction). The color filter portion may include first to third color filter portions 400a, 400b, and 400c corresponding to the first to third pixels PX1, PX2, and PX3, respectively. When viewed in a direction perpendicular to the lower substrate 100 or the upper substrate 400 (e.g., the Z-axis direction), the first to third color filter portions 400a, 400b, and 400c may overlap with the first to third pixel electrodes 311, 312, and 313. The first to third color filter portions 400a, 400b, and 400c may respectively filter light beams emitted by the first to third light-emitting diodes. Accordingly, the display device may display a full-color image. In some embodiments, the first to third color filter portions 400a, 400b, and 400c may also filter incident light beams from the surrounding environment to prevent or reduce light reflection.

[0086] According to an embodiment, in the first region A1, the first color filter portion 400a may include a light-transmitting layer 415 located between the upper substrate 400 and the counter electrode 330, and a first color filter layer 410 located between the upper substrate 400 and the light-transmitting layer 415. In the second region A2, the second color filter portion 400b may include a second color quantum dot layer 425 located between the upper substrate 400 and the counter electrode 330, and a second color filter layer 420 located between the upper substrate 400 and the second color quantum dot layer 425. In the third region A3, the third color filter portion 400c may include a third color quantum dot layer 435 located between the upper substrate 400 and the counter electrode 330, and a third color filter layer 430 located between the upper substrate 400 and the third color quantum dot layer 435.

[0087] The first color filter layer 410 can transmit only light with wavelengths ranging from approximately 450 nm to approximately 495 nm. The first color filter layer 410 can be located on the lower surface of the upper substrate 400 in a direction toward the lower substrate 100 (e.g., the -Z-axis direction). The first color filter layer 410 covers the first region A1 of the upper substrate 400 corresponding to the first light-emitting diode. Figure 4 As shown, the first color filter layer 410 has first-second openings 412 exposing a second region A2 corresponding to the second pixel electrode 312. The first-second openings 412 define the region of the second pixel PX2. The first color filter layer 410 also has first-third openings 413 exposing a third region A3 corresponding to the third pixel electrode 313. The first-third openings 413 define the region of the third pixel PX3.

[0088] The second color filter layer 420 can transmit light having wavelengths ranging from approximately 495 nm to approximately 570 nm. The second color filter layer 420 may include a portion located on the lower surface of the first color filter layer 410 in the direction toward the lower substrate 100 (e.g., the -Z-axis direction) and a portion filling the first-second openings 412 of the first color filter layer 410. The portion of the second color filter layer 420 located on the lower surface of the first color filter layer 410 in the direction toward the lower substrate 100 (e.g., the -Z-axis direction) can serve as an opaque spacer. The portion of the second color filter layer 420 filling the first-second openings 412 of the first color filter layer 410 may be located on the lower surface of the upper substrate 400 in the direction toward the lower substrate 100 (e.g., the -Z-axis direction). Figure 4 As shown, the second color filter layer 420 has a second-first opening 421 that exposes a first region A1 corresponding to the first pixel electrode 311. The second-first opening 421 can define the region of the first pixel PX1. The second color filter layer 420 also has a second-third opening 423 that exposes a third region A3 corresponding to the third pixel electrode 313.

[0089] The third color filter layer 430 can transmit only light with wavelengths ranging from approximately 630 nm to approximately 780 nm. The third color filter layer 430 fills the first-third openings 413 of the first color filter layer 410. The third color filter layer 430 can also be understood as filling the second-third openings 423 of the second color filter layer 420.

[0090] The first to third color filter layers 410, 420, and 430 can reduce the reflection of external light in the display device. For example, when external light reaches the first color filter layer 410, only light with the predetermined wavelength as described above is transmitted through the first color filter layer 410, and light with other wavelengths is absorbed by the first color filter layer 410. Accordingly, only light with the predetermined wavelength (or wavelength range) as described above is transmitted through the first color filter layer 410 among the external light incident on the display device, and a portion of the transmitted light is reflected by the counter electrode 330 or the first pixel electrode 311 below the first color filter layer 410 and emitted back to the outside. Therefore, only a portion of the external light incident on the first pixel PX1 is reflected to the outside, thereby reducing the reflection of external light. This description also applies to the second color filter layer 420 and the third color filter layer 430.

[0091] As in Figure 4 As can be seen, the second-first opening 421 of the second color filter layer 420 defines the first region A1, the first-second opening 412 of the first color filter layer 410 defines the second region A2, and the first-third opening 413 of the first color filter layer 410 defines the third region A3. However, the embodiments are not limited thereto.

[0092] According to another embodiment, such as Figure 5 As shown, the black matrix 510 can be located between the first to third color filter layers 410, 420, and 430. The black matrix 510 can define regions of the first to third pixels PX1, PX2, and PX3 by having openings corresponding to the first to third regions A1, A2, and A3, respectively. The black matrix 510 can include the same material as that included in the dam 500, which will be described later. For example, the black matrix 510 can include inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride. According to some embodiments, the black matrix 510 can include a photoresist material. In this case, the black matrix 510 can be readily formed by processes such as exposure and development processes.

[0093] The dam 500 may be located between the overlapping portion between the color filter layers and the lower substrate 100. According to an embodiment, such as... Figure 4 As shown, the dam 500 may be located between the overlapping portion between the first color filter layer 410 and the second color filter layer 420 and the lower substrate 100. According to some embodiments, when the display device includes the aforementioned black matrix 510, the dam 500 may be positioned to overlap with the black matrix 510.

[0094] The dam 500 may have a first opening 501 corresponding to the first region A1, a second opening 502 corresponding to the second region A2, and a third opening 503 corresponding to the third region A3. The first to third openings 501, 502, and 503 of the dam 500 may correspond to the openings of the pixel defining layer 150 that define the regions of the first to third pixels PX1, PX2, and PX3. When the first to third openings 501, 502, and 503 of the dam 500 correspond to the openings of the pixel defining layer 150 that define the corresponding regions of the first to third pixels PX1, PX2, and PX3, this means that when viewed in a direction perpendicular to the upper surface of the upper substrate 400 (e.g., the Z-axis direction), the shape of the corresponding edges of the first to third openings 501, 502, and 503 of the dam 500 may be the same as or similar to the shape of the edges of the openings of the pixel defining layer 150 that define the corresponding regions of the first to third pixels PX1, PX2, and PX3.

[0095] The dam 500 may comprise inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride. According to some embodiments, the dam 500 may comprise a photoresist material. In this case, the dam 500 can be readily formed by processes such as exposure and development.

[0096] A light-transmitting layer 415 fills the first opening 501 of the dam 500. The first color emitting layer EML1, included in the intermediate layer 320 on the first pixel electrode 311, can emit light of a first wavelength band, such as light having a wavelength range from approximately 450 nm to approximately 495 nm. In the first pixel PX1, the light of the first wavelength band is emitted to the outside through the upper substrate 400 without wavelength conversion. Accordingly, the first pixel PX1 may not have a quantum dot layer. Since a quantum dot layer is not required in the first opening 501 of the dam 500, the light-transmitting layer 415, formed of a light-transmitting resin, can be located in the first opening 501. The light-transmitting layer 415 may include acrylic, BCB, and / or HMDSO, but the embodiments are not limited thereto. According to some embodiments, with... Figure 4 Unlike other structures, the light-transmitting layer 415 may not be located in the first opening 501 of the embankment 500.

[0097] The second color quantum dot layer 425 fills the second opening 502 of the dam 500. The second color quantum dot layer 425 can convert light of a first wavelength band generated by the intermediate layer 320 on the second pixel electrode 312 into light of a second wavelength band. For example, when light with a wavelength range from approximately 450 nm to approximately 495 nm is generated by the intermediate layer 320 on the second pixel electrode 312, the second color quantum dot layer 425 can convert the light into light with a wavelength range from approximately 495 nm to approximately 570 nm. Accordingly, in the second pixel PX2, light with a wavelength range from approximately 495 nm to approximately 570 nm can be emitted to the outside through the upper substrate 400.

[0098] The third color quantum dot layer 435 fills the third opening 503 of the dam 500. The third color quantum dot layer 435 can convert light of the first wavelength band generated by the intermediate layer 320 on the third pixel electrode 313 into light of the third wavelength band. For example, when light with a wavelength range from about 450 nm to about 495 nm is generated by the intermediate layer 320 on the third pixel electrode 313, the third color quantum dot layer 435 can convert the light into light with a wavelength range from about 630 nm to about 780 nm. Accordingly, in the third pixel PX3, light with a wavelength range from about 630 nm to about 780 nm can be emitted to the outside through the upper substrate 400.

[0099] Each of the second color quantum dot layer 425 and the third color quantum dot layer 435 can be formed by dispersing quantum dots in a resin. Quantum dots include semiconductor materials such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), and / or indium phosphide (InP), but the embodiments are not limited thereto. The quantum dots can have a size of several nanometers, and the wavelength of the converted light varies depending on the size of the quantum dots and / or the shell / core structure. Any suitable light-transmitting material can be used as the resin included in the second color quantum dot layer 425 and the third color quantum dot layer 435. For example, polymer resins such as acrylic acid, benzocyclobutene (BCB), and / or hexamethyldisiloxane (HMDSO) can be used as materials for forming the second color quantum dot layer 425 and the third color quantum dot layer 435, respectively. The materials used to form the second color quantum dot layer 425 and the third color quantum dot layer 435 can be positioned within the second opening 502 and the third opening 503 of the dike 500, respectively, by inkjet printing.

[0100] Although described as including quantum dots, the second color quantum dot layer 425 and / or the third color quantum dot layer 435 may additionally or alternatively include quantum disks, quantum rods and / or quantum wire core / shell quantum structures, etc.

[0101] The first protective layer IL1 may be located between the first color filter layer 410 and the light-transmitting layer 415, between the second color filter layer 420 and the second color quantum dot layer 425, and between the third color filter layer 430 and the third color quantum dot layer 435. The second protective layer IL2 may be arranged to cover the lower surfaces of the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 in the direction toward the lower substrate 100. Each of the first protective layer IL1 and the second protective layer IL2 may be integrally formed across the entire surface of the substrate 400, but the embodiments are not limited thereto. During the manufacturing process of the display device or during use after the manufacturing of the display device, the first protective layer IL1 and the second protective layer IL2 can prevent damage to the color filter layer and the quantum dot layer.

[0102] The first protective layer IL1 and the second protective layer IL2 may comprise inorganic insulating materials with light-transmitting properties, such as silicon oxide, silicon nitride, and / or silicon oxynitride. The first protective layer IL1 and the second protective layer IL2 may comprise layers containing at least one material selected from polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane, but the embodiments are not limited thereto. According to some embodiments, such as... Figure 4As shown, the first protective layer IL1 may further include an organic material layer covering the respective lower surfaces of the first to third color filter layers 410, 420, and 430 in the direction toward the lower substrate 100. In this case, due to the organic material layer, the first protective layer IL1 may have a flat lower surface.

[0103] Figure 6 This is a schematic cross-sectional view of a portion of the intermediate layer included in a display device according to an embodiment. Figure 7 This is a schematic cross-sectional view of a portion of the intermediate layer included in a display device according to an embodiment.

[0104] refer to Figure 6 and Figure 7 , Figure 1 The display device 1 may include a thin-film transistor array substrate 10 comprising the aforementioned thin-film transistors. First to third light-emitting diodes may be located above the thin-film transistor array substrate 10. The first to third light-emitting diodes may each include first to third pixel electrodes 311, 312, and 313, and include an intermediate layer 320 and a counter electrode 330. First to third color filter portions 400a, 400b, and 400c, corresponding to the first to third pixels PX1, PX2, and PX3 respectively, may be located above the counter electrode 330.

[0105] The intermediate layer 320 included in the first to third light-emitting diodes may have a series structure in which a plurality of light-emitting units, each including an EML, are stacked sequentially. Each of the plurality of light-emitting units refers to a unit including at least one of HIL, HTL, ETL, and EIL, and an EML. For example, the first color light-emitting unit may have a structure in which the hole transport layer HTL, the first color emission layer EMLa, and the electron transport layer ETL are stacked sequentially, and the second color light-emitting unit may have a structure in which the hole transport layer HTL, the second color emission layer EMLb, and the electron transport layer ETL are stacked sequentially. The first color light-emitting unit may further include a hole injection layer HIL. The second color light-emitting unit may further include an electron injection layer EIL.

[0106] The light beam emitted by the multiple EMLs included in the intermediate layer 320 is filtered and emitted to the outside as it passes through the first to third color filter portions 400a, 400b and 400c located above the counter electrode 330.

[0107] According to the embodiments, such as Figure 6 As shown, the intermediate layer 320 may include a plurality of first color emitting units, each including a first color emitting layer EML. Although in Figure 6 The intermediate layer 320 includes three first color light-emitting units stacked one after another, but the number of first color light-emitting units included in the intermediate layer 320 is not limited to... Figure 6 In the case where the intermediate layer 320 includes multiple first color emitting layers EMLAs described above, a greater amount of first color light can be emitted from the intermediate layer 320 compared to when the intermediate layer 320 includes only one first color emitting layer EMLAs, resulting in improved luminous efficiency of the display device.

[0108] A charge generation layer (CGL) can be located between the first color light-emitting units. A CGL that provides electrons or holes can improve the luminous efficiency of adjacent EMLs. A CGL can include an n-type charge generation layer CGLn that provides electrons and a p-type charge generation layer CGLp that provides holes. For example, as... Figure 6 As shown, the n-type charge generation layer CGLn can be located above the electron transport layer ETL of the light-emitting unit to provide electrons to the electron transport layer ETL, and the p-type charge generation layer CGLp can be located below the hole transport layer HTL of another light-emitting unit to provide holes to the hole transport layer HTL. CGL can include a metallic material.

[0109] According to another embodiment, such as Figure 7 As shown, the intermediate layer 320 may include one or more first-color emitting units, each including a first color emitting layer EMLa, and one or more second-color emitting units, each including a second color emitting layer EMLb. Although in Figure 7 The intermediate layer 320 includes three first color light-emitting units and one second color light-emitting unit stacked sequentially. However, the number of first color light-emitting units and the number of second color light-emitting units included in the intermediate layer 320, as well as the arrangement of the first color light-emitting units and the second color light-emitting units, are not limited to the following. Figure 7 In this case, for example, with Figure 7 Unlike other types of light-emitting units, the second color light-emitting unit can be located between the first color light-emitting units, or the second color light-emitting unit can be located at the bottom and the first color light-emitting units can be stacked sequentially on top of the second color light-emitting unit.

[0110] In addition, in combination Figure 7 In the described embodiments, CGL may be located between first color light-emitting units, between second color light-emitting units, and / or between first color light-emitting units and second color light-emitting units.

[0111] When the intermediate layer 320 includes one or more first color emitting layers EMLa and one or more second color emitting layers EMLb, the low luminous efficiency of the second color emitting layer EMLb or the low light conversion efficiency of the second color quantum dot layer 425 can be improved compared to when the intermediate layer 320 only includes the first color emitting layer EMLa. Furthermore, the differences in luminous efficiency between the EMLs of a pixel and the differences in light conversion efficiency between the quantum dot layers of a pixel can be improved, thereby controlling the area of ​​each pixel. This will be referred to later. Figures 8A to 8D Describe it.

[0112] Figures 8A to 8D This is a plan view schematically illustrating the layout of pixels included in a display device according to various embodiments. For convenience, in Figures 8A to 8D In the diagram, the area of ​​a pixel is shown as the corresponding area of ​​the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435, which are elements proportional to the pixel and fill the opening of the dam 500.

[0113] like Figures 8A to 8D As shown, a display device according to some embodiments may include a dam 500 having openings corresponding to the transmissive region TA and corresponding areas of the first pixel PX1, the second pixel PX2, and the third pixel PX3, respectively. Reference will be made later. Figure 9 Provide a detailed description of the transmission region (TA).

[0114] The light-transmitting layer 415 is located in the opening of the dam 500 corresponding to the first pixel PX1, the second color quantum dot layer 425 is located in the opening of the dam 500 corresponding to the second pixel PX2, and the third color quantum dot layer 435 is located in the opening of the dam 500 corresponding to the third pixel PX3. In this case, the areas of the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 can be understood as being proportional to the corresponding areas of the first pixel PX1, the second pixel PX2, and the third pixel PX3.

[0115] Figure 8A This shows that when the intermediate layer 320 only includes Figure 6 The area of ​​a pixel in the first color emission layer EML. From Figure 8A It can be seen that the planar area of ​​the light-transmitting layer 415 is smaller than the planar area of ​​the second color quantum dot layer 425. This can be understood as the planar area of ​​the first pixel PX1 being smaller than the planar area of ​​the second pixel PX2. This layout takes into account the fact that the luminous efficiency or light conversion efficiency of the second pixel PX2 is less than that of the first pixel PX1.

[0116] on the other hand, Figures 8B to 8DThis shows the pixel area when the intermediate layer 320 includes a first color emission layer EMLa and a second color emission layer EMLb. From Figures 8B to 8D It can be seen that the planar area of ​​the light-transmitting layer 415 is equal to the planar area of ​​the second color quantum dot layer 425. This can be understood as the planar area of ​​the first pixel PX1 being equal to the planar area of ​​the second pixel PX2. Because the intermediate layer 320 further includes an emission layer of a color with low luminous efficiency or low light conversion efficiency, the area of ​​the pixel emitting light of that color can be relatively reduced. In other words, the pixel area can be controlled by adjusting the emission layer included in the intermediate layer 320.

[0117] like Figure 8C and Figure 8D As shown, the display device may further include a spacer CS. The spacer CS can... Figure 2 Display unit DU and Figure 2 The spacing between the color filter units (CU) is maintained and supported at a distance or greater. The spacer (CS) may have a small degree of brittleness and elasticity to prevent damage from external forces. For example, the spacer (CS) may include polymeric resins such as silicone, epoxy, acrylic, BCB, and / or HMDSO, but the embodiments are not limited thereto.

[0118] As referenced above Figure 8C and Figure 8D As the pixel area is controlled, the spacer CS and the transmissive region TA can be arranged more effectively. For example, as... Figure 8C As shown, by reducing the area of ​​pixels with relatively low luminous efficiency and relatively low light conversion efficiency, a wider transmission area (TA) can be ensured. Figure 8D As shown, a wider transmission area TA can be ensured by adjusting the pixels to have a rectangular shape with the same area.

[0119] Figure 9 This is a schematic cross-sectional view of a portion of a display device including a transmissive area according to an embodiment. Figure 10 This is a schematic cross-sectional view of a portion of a display device including a transmissive area according to an embodiment. In the following drawings, the same reference numerals indicate the same parts, and repeated descriptions thereof will be omitted.

[0120] like Figure 9 and Figure 10As shown, each of the display devices may further include a transmissive region TA. Compared to the display region DA, the transmissive region TA can be a region with relatively high transmittance. By including periodically arranged transmissive regions TA, the display device can be implemented as a transparent display device. A transparent display device is one that enables a user to recognize the image displayed due to the light emission of the display device's light-emitting diodes and to recognize the light beam transmitted by the display device through the transmissive region TA. In other words, a transparent display device can be a display device that, while displaying an image, allows the user to visually recognize the space hidden by the display device (or behind the display device).

[0121] According to an embodiment, no electrodes may be located in the transmission region TA. For example, the intermediate layer 320 and the counter electrode 330 may have openings corresponding to the transmission region TA. In other words, the intermediate layer 320 and the counter electrode 330 may be disconnected near the edge of the transmission region TA, and therefore may not exist in the transmission region TA. Some or each of the buffer layer 110, gate insulating layer 121, interlayer insulating layer 131, planarization layer 140, and pixel defining layer 150 located below the intermediate layer 320 may have openings corresponding to the transmission region TA. Therefore, the transmittance in the transmission region TA can be improved.

[0122] The encapsulation layer 160 can be arranged to cover a trench formed by the buffer layer 110, gate insulating layer 121, interlayer insulating layer 131, planarization layer 140, pixel defining layer 150, intermediate layer 320, and counter electrode 330 having openings corresponding to the transmission region TA. The trench can be filled with epoxy resin or adhesive layer ADH, but the embodiments are not limited thereto.

[0123] The upper substrate 400 may include a fourth region A4 corresponding to the transmission region TA. The first color filter layer 410 may have first-four openings exposing the fourth region A4. In the fourth region A4, a light-transmitting material layer 445 may be located between the upper substrate 400 and the lower substrate 100. For example, the light-transmitting material layer 445 may be located between the first protective layer IL1 and the second protective layer IL2. The light-transmitting material layer 445 may include a material with high light transmittance.

[0124] The light-transmitting material layer 445 can be formed simultaneously with the light-transmitting layer 415. For example, the space occupied by the light-transmitting material layer 445 and the space occupied by the light-transmitting layer 415 can be connected to each other and integrally formed. In other words, the embankment 500 may not have openings corresponding to the first region A1 and the transmission region TA respectively, but may have openings corresponding to both the first region A1 and the transmission region TA. The openings corresponding to both the first region A1 and the transmission region TA of the embankment 500 can be filled with the material included in the light-transmitting layer 415. Accordingly, the light-transmitting material layer 445 may include the same material included in the light-transmitting layer 415. The light-transmitting material layer 445 can be formed simultaneously with the formation of the light-transmitting layer 415.

[0125] Combination Figure 10 The described display device and its combination Figure 9 The difference in the described display device is that the light-transmitting material layer 445 is not integrally formed with the light-transmitting layer 415 and is located in an independent space.

[0126] like Figure 10 As shown, the dam 500 may have openings corresponding to the first region A1 and the transmissive region TA, respectively. For example, the dam 500 may have a first opening 501 corresponding to the first region A1 and a fourth opening 504 corresponding to the fourth region A4. The first opening 501 of the dam 500 may be filled with a light-transmitting layer 415, and the fourth opening 504 of the dam 500 may be filled with a light-transmitting material layer 445.

[0127] According to one embodiment, the light-transmitting material layer 445 of the fourth opening 504 of the filler 500 may include the same material as the material included in the light-transmitting layer 415 of the first opening 501 of the filler 500. According to another embodiment, the light-transmitting material layer 445 of the fourth opening 504 of the filler 500 may include a different material than the material included in the light-transmitting layer 415 of the first opening 501 of the filler 500. For example, the light-transmitting material layer 445 of the fourth opening 504 of the filler 500 may include a filler or a transparent resin.

[0128] Figure 11 This is a schematic cross-sectional view of a portion of a display device according to an embodiment, with the component located below it. For reference, Figure 11 Component 40 is shown located at the joint Figure 9 The described display device is located below it, but component 40 may be located in conjunction with... Figure 10 Below the display device described.

[0129] Component 40 can be located on the above reference. Figure 9 and Figure 10 Below each of the described display devices. In this case, the transmissive area TA of the display device can be provided as an area capable of transmitting light and / or sound from the component 40.

[0130] Component 40 may be an electronic device located below the display device to overlap with the transmissive area TA. According to embodiments, component 40 may be an electronic device that uses light and / or sound. For example, component 40 may be at least one of a distance-measuring sensor, such as a proximity sensor, and a sensor that identifies a part of a user's body, such as a fingerprint, iris, or face. Component 40 may also be a small light that outputs light, or an image sensor, such as a camera, that captures images.

[0131] When component 40 is an electronic device that uses light, it can use light of various wavelengths, such as visible light, infrared light, and ultraviolet light. Component 40 can also be an electronic device that uses sound in ultrasonic waves or other frequency bands. According to embodiments, component 40 includes sub-components such as light emitters and light receivers. The light emitters and light receivers can be integrated with each other or physically separated such that a pair of light emitters and light receivers can constitute one component 40. To prevent limitations on the functionality of component 40, the display device may include a transmissive area TA capable of transmitting light and / or sound that is output from component 40 to the outside or travels from the outside toward component 40.

[0132] Figure 12 This is a schematic cross-sectional view of a portion of a display device including a first reflective layer according to an embodiment. For reference, Figure 12 Reference shown Figure 9 The described display device further includes a first reflective layer 600, but references... Figure 10 The described display device may further include a first reflective layer 600.

[0133] like Figure 12 As shown, the display device according to an embodiment may further include a first reflective layer 600. By including periodically arranged transmissive regions TA and the first reflective layer 600 located in the transmissive regions TA, the display device can be implemented as a mirror display device. A mirror display device is a display device that enables a user to recognize an image displayed based on the light emitted by the light-emitting diodes (LEDs) when the LEDs of the display device are working, and to recognize the light reflected by the first reflective layer 600 when the LEDs of the display device are not working. In other words, a mirror display device is one in which the front surface of the display device can be recognized as a mirror when the LEDs of the display device are not working.

[0134] The first reflective layer 600 can reflect light introduced from the front surface of the display device (e.g., from above the upper substrate 400). For example, as Figure 12As shown, light entering from above the upper substrate 400 through its upper surface can be reflected upwards by the first reflective layer 600. Compared to the light emitted by the light-emitting diodes (LEDs) of the display device, the light reflected by the first reflective layer 600 can have a relatively small amount and weaker intensity. Accordingly, the user can only perceive the light reflected by the first reflective layer 600 with the naked eye when the LEDs of the display device are not working, and when the LEDs of the display device are working, the image displayed by the display device is not affected by the light reflected by the first reflective layer 600.

[0135] In the fourth region A4 corresponding to the transmission region TA, the first reflective layer 600 may be located between the upper substrate 400 and the lower substrate 100. For example, in the fourth region A4, the first reflective layer 600 may be located between the upper substrate 400 and the light-transmitting material layer 445. In the fourth region A4, the first reflective layer 600 may be located on the lower surface of the first protective layer IL1 in the direction toward the lower substrate 100, and the light-transmitting material layer 445 may cover the lower surface of the first reflective layer 600 in the direction toward the lower substrate 100. The first reflective layer 600 may include a metallic material with high reflectivity, such as Ag.

[0136] Figure 13 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment. Figure 14 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment. Figure 15 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment. Figure 16 This is a schematic cross-sectional view of a portion of a display device including a second reflective layer according to an embodiment.

[0137] like Figures 13 to 16 As shown, the display device according to various embodiments may further include a second reflective layer 700. By including the second reflective layer 700, the display device can be implemented as a double-sided display device. A double-sided display device refers to a display device in which a portion of the light emitted by the light-emitting diodes of the display device is emitted toward the front surface of the display device, while the remaining portion of the light is reflected by the second reflective layer 700 and emitted toward the rear surface of the display device. In other words, a double-sided display device can be a display device that displays images on both its front and rear surfaces.

[0138] The second reflective layer 700 can reflect a portion of the light emitted by the light-emitting diode toward the lower substrate 100. For example, as... Figure 13As shown, a portion of the light emitted by the light-emitting diode of the display device can be emitted to the outside of the upper substrate 400 through the area where the second reflective layer 700 is not located, and the remaining portion of the light can be reflected towards the lower substrate 100 by the second reflective layer 700 and emitted to the outside of the lower substrate 100.

[0139] The second reflective layer 700 is positioned to overlap with at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3. In other words, in the regions that do not overlap with the second reflective layer 700, light emitted by the light-emitting diode passes through the upper substrate 400 and is emitted to the outside of the upper substrate 400, while in the regions that overlap with the second reflective layer 700, light emitted by the light-emitting diode is reflected by the second reflective layer 700 toward the lower substrate 100.

[0140] The second reflective layer 700 may include a metallic material with high reflectivity, such as Ag. To improve the quality of the image displayed on the rear surface of the display device, the first to third pixel electrodes 311, 312, and 313 may include a transparent electrode material. According to some embodiments, the thin-film transistor may not be located in the path of light reflected by the second reflective layer 700.

[0141] According to the embodiments, such as Figure 13 As shown, a second reflective layer 700 may be located on the lower surface of the upper substrate 400 in the first region A1 in the direction toward the lower substrate 100, and a first color filter layer 410 may cover the lower surface of the second reflective layer 700 in the direction toward the lower substrate 100. Another second reflective layer 700 may be located on the lower surface of the upper substrate 400 in the second region A2 in the direction toward the lower substrate 100, and a second color filter layer 420 may cover the lower surface of the second reflective layer 700 in the direction toward the lower substrate 100. Yet another second reflective layer 700 may be located on the lower surface of the upper substrate 400 in the third region A3 in the direction toward the lower substrate 100, and a third color filter layer 430 may cover the lower surface of the second reflective layer 700 in the direction toward the lower substrate 100. In other words, the second reflective layer 700 can be located between the upper substrate 400 and the first color filter layer 410 in the first region A1, between the upper substrate 400 and the second color filter layer 420 in the second region A2, and between the upper substrate 400 and the third color filter layer 430 in the third region A3.

[0142] According to another embodiment, such as Figure 14As shown, the second reflective layer 700 can be located on the lower surface of the first color filter layer 410 in the first region A1 in the direction toward the lower substrate 100, on the lower surface of the second color filter layer 420 in the second region A2 in the direction toward the lower substrate 100, and on the lower surface of the third color filter layer 430 in the third region A3 in the direction toward the lower substrate 100. In other words, the second reflective layer 700 can be located between the first color filter layer 410 and the first protective layer IL1 in the first region A1, between the second color filter layer 420 and the first protective layer IL1 in the second region A2, and between the third color filter layer 430 and the first protective layer IL1 in the third region A3.

[0143] According to another embodiment, such as Figure 15 As shown, at the overlap between the first color filter layer 410 and the second color filter layer 420, the second reflective layer 700 can be located on the lower surface of the second color filter layer 420 in the direction toward the lower substrate 100. In other words, the second reflective layer 700 can be located on the lower surface of the second color filter layer 420 in the direction toward the lower substrate 100, respectively, between the first region A1 and the second region A2, between the second region A2 and the third region A3, and between the third region A3 and the first region A1.

[0144] Figure 16 The display device shown includes a transmissive region TA and further includes the above reference. Figure 14 The second reflective layer 700 is described. In this case, the display device can simultaneously perform the functions of the transparent display device and the double-sided display device described above. For example, according to some embodiments, the display device can be a display device capable of performing the functions of a double-sided display device that displays images on both its front and rear surfaces, and a display device capable of simultaneously recognizing the image displayed due to light emission from the light-emitting diodes of the display device and the light beam transmitted by the display device through the transmission region TA.

[0145] Although Figure 16 Reference shown Figure 9 The described display device further includes a second reflective layer 700, but Figure 10 The display device may further include a second reflective layer 700. Although Figure 16 The display device shown includes the above reference. Figure 14 The second reflective layer 700 is described, but the display device may include the above reference. Figure 13 The second reflective layer 700 described above or referenced above Figure 15 The second reflective layer 700 is described.

[0146] Figure 17This is a schematic plan view of a portion of the sensor electrode layer included in a display device according to an embodiment. Figure 18 According to the embodiments along Figure 17 A cross-sectional view of a portion of the display device taken by the cross-section line XVIII-XVIII'. Figure 19 According to the embodiments Figure 18 A schematic plan view of a portion of the first conductive layer. Figure 20 According to the embodiments Figure 18 A schematic plan view of a portion of the second conductive layer.

[0147] The display device according to an embodiment may include a sensor electrode layer SENL for sensing user touch input. (See reference...) Figure 17 The sensor electrode layer SENL includes a sensor region TSA for sensing a user's touch and a sensor peripheral region TPA surrounding the sensor region TSA. The display device including the lower substrate 100 includes the features described above. Figure 1 The display area DA and the area outside the display area DA Figure 1 The peripheral area PA, and the sensor area TSA can be understood as overlapping with the display area DA, while the sensor peripheral area TPA can be understood as overlapping with the peripheral area PA.

[0148] The sensor electrode layer SENL may include two types of electrodes, such as a first sensor electrode 810 and a second sensor electrode 820, as... Figure 21 The sensor electrode 800. For example, the sensor electrode layer SENL may include a first sensor electrode 810, first signal lines 815-1 to 815-4 connected to the first sensor electrode 810, a second sensor electrode 820, and second signal lines 825-1 to 825-5 connected to the second sensor electrode 820. The sensor electrode layer SENL can sense external input according to mutual capacitance and / or self-capacitance methods.

[0149] The first sensing electrode 810 can be arranged in the Y-axis direction, and the second sensing electrode 820 can be arranged in the X-axis direction, which intersects the Y-axis direction. The first sensing electrodes 810 arranged in the Y-axis direction can be connected to each other via first connecting electrodes 811 located between adjacent first sensing electrodes 810, and can form each of the first sensing lines 810C1 to 810C4. The second sensing electrodes 820 arranged in the X-axis direction can be connected to each other via second connecting electrodes 821 located between adjacent second sensing electrodes 820, and can form each of the second sensing lines 820R1 to 820R5. The first sensing lines 810C1 to 810C4 and the second sensing lines 820R1 to 820R5 can intersect each other. For example, the first sensing lines 810C1 to 810C4 can be perpendicular to the second sensing lines 820R1 to 820R5.

[0150] The first sensing lines 810C1 to 810C4 and the second sensing lines 820R1 to 820R5 can be located in the sensor region TSA, and can be connected to the sensing signal pads 840 via the first signal lines 815-1 to 815-4 and the second signal lines 825-1 to 825-5 formed in the sensor peripheral region TPA. The first sensing lines 810C1 to 810C4 can be connected to the first signal lines 815-1 to 815-4 respectively, and the second sensing lines 820R1 to 820R5 can be connected to the second signal lines 825-1 to 825-5 respectively.

[0151] Figure 17 The diagram shows first signal lines 815-1 to 815-4 connected to the top and bottom of each of the first sensing lines 810C1 to 810C4. This configuration can improve sensing sensitivity. However, the embodiment is not limited to this. According to another embodiment, the first signal lines 815-1 to 815-4 may be connected only to the top or bottom of the first sensing lines 810C1 to 810C4. The layout of the first signal lines 815-1 to 815-4 and the second signal lines 825-1 to 825-5 can vary depending on, for example, the shape or size of the sensor region TSA or the sensing method of the sensor electrode layer SENL.

[0152] The sensor electrode layer (SENL) can include multiple conductive layers. For example... Figure 18 As shown, the sensor electrode layer SENL may include a first conductive layer CML1 and a second conductive layer CML2 located on the display unit DU. A first insulating layer 81 may be located between the first conductive layer CML1 and the display unit DU, a second insulating layer 83 may be located between the first conductive layer CML1 and the second conductive layer CML2, and a third insulating layer 85 may be located on the second conductive layer CML2.

[0153] According to an embodiment, the first insulating layer 81 and the second insulating layer 83 may be inorganic insulating layers such as silicon nitride, and the third insulating layer 85 may be an organic insulating layer. Figure 18 The diagram shows a first insulating layer 81 located between the display unit DU and the first conductive layer CML1. However, according to another embodiment, the first insulating layer 81 can be omitted, and the first conductive layer CML1 can be located directly on the display unit DU. According to another embodiment, the first insulating layer 81 and the second insulating layer 83 can be organic insulating layers.

[0154] like Figure 18 and Figure 19 As shown, the first conductive layer CML1 may include a first connection electrode 811. Figure 18 and Figure 20 As shown, the second conductive layer CML2 may include a first sensor electrode 810, a second sensor electrode 820, and a second connection electrode 821. The second sensor electrodes 820 can be electrically connected to each other via second connection electrodes 821 provided on the same layer on which the second sensor electrodes 820 are provided. The first sensor electrodes 810 can be electrically connected to each other via first connection electrodes 811 provided on a different layer on which the first sensor electrodes 810 are provided. First connection electrodes 811 electrically connecting adjacent first sensor electrodes 810 can be connected to adjacent first sensor electrodes 810 via contact holes CNTs provided in the second insulating layer 83.

[0155] The first conductive layer CML1 and the second conductive layer CML2 may comprise metals. For example, each of the first conductive layer CML1 and the second conductive layer CML2 may comprise at least one of, for example, Mo, Al, Cu, and Ti, and may have a multilayer or single-layer structure comprising the aforementioned materials. According to an embodiment, each of the first conductive layer CML1 and the second conductive layer CML2 may have a Ti / Al / Ti multilayer structure.

[0156] refer to Figure 20 As shown in the enlarged view, each first sensor electrode 810 may have a grid structure (or lattice structure) including a plurality of holes 810H. Each of the plurality of holes 810H may be positioned to overlap with the emitter region PE of a pixel. Similarly, each second sensor electrode 820 may have a grid structure (or lattice structure) including a plurality of holes 820H. Each of the plurality of holes 820H may be positioned to overlap with the emitter region PE of a pixel.

[0157] Although Figures 18 to 20The illustration shows a case where the first sensor electrode 810 and the first connection electrode 811 are located on different layers, but the embodiment is not limited thereto. According to another embodiment, the first sensor electrode 810 and the first connection electrode 811 may be located on the same layer (e.g., in the second conductive layer CML2), and the second sensor electrode 820 and the second connection electrode 821 may be located on different layers and may contact each other via contact holes penetrating the second insulating layer 83.

[0158] In addition, although Figures 18 to 20 In this embodiment, the first sensor electrode 810 and the second sensor electrode 820 are included in the second conductive layer CML2, but the embodiment is not limited thereto. According to another embodiment, the first sensor electrode 810 and the second sensor electrode 820 may be located on different layers. For example, one of the first sensor electrode 810 and the second sensor electrode 820 may be located in the first conductive layer CML1, while the other may be located in the second conductive layer CML2.

[0159] Figure 21 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment. Figure 22 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment. Figure 23 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment. Figure 24 This is a schematic cross-sectional view of a portion of a display device including sensor electrodes according to an embodiment.

[0160] like Figures 21 to 24 As shown, the display device according to various embodiments may further include the above-referenced... Figures 17 to 20 The described sensor electrode layer SENL. For example, a display device may further include a sensor electrode layer SENL comprising... Figure 17 The first sensor electrode 810 and the second sensor electrode 820 are sensor electrodes 800. A display device can be implemented as a touch display device by including the sensor electrode 800. A touch display device refers to a display device that can be used as an input device providing an input interface between the display device and a user, and as an output device providing an output interface between the display device and a user.

[0161] The sensor electrode 800 can be positioned around at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3.

[0162] According to the embodiments, such as Figure 21As shown, the sensor electrode 800 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located between the upper substrate 400 and the first protective layer IL1. For example, the sensor electrode 800 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located on the upper surface of the first protective layer IL1 in the direction toward the upper substrate 400. According to the cross-sectional view, this can be understood as the sensor electrode 800 being located on the upper surface of the first protective layer IL1 in the direction toward the upper substrate 400, respectively, between the first region A1 and the second region A2, between the second region A2 and the third region A3, and between the third region A3 and the first region A1.

[0163] According to another embodiment, such as Figure 22 As shown, the sensor electrode 800 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located between the first protective layer IL1 and the first protective layer IL2. For example, the sensor electrode 800 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located on the lower surface of the first protective layer IL1 in the direction toward the lower substrate 100. According to the cross-sectional view, this can be understood as the sensor electrode 800 being located on the lower surface of the first protective layer IL1 in the direction toward the lower substrate 100, respectively, between the first region A1 and the second region A2, between the second region A2 and the third region A3, and between the third region A3 and the first region A1.

[0164] According to another embodiment, the first sensor electrode 810 and the second sensor electrode 820 included in the sensor electrode 800 can have different stacked structures. For example, as Figure 23As shown, the first sensor electrode 810 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located between the upper substrate 400 and the first protective layer IL1. The second sensor electrode 820 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located between the first protective layer IL1 and the second protective layer IL2. For example, the first sensor electrode 810 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located on the upper surface of the first protective layer IL1 in the direction toward the upper substrate 400. The second sensor electrode 820 may surround at least a portion of the first region A1, at least a portion of the second region A2, and at least a portion of the third region A3, and may be located on the lower surface of the first protective layer IL1 in the direction toward the lower substrate 100. According to another embodiment, the first sensor electrode 810 and the second sensor electrode 820 may be arranged in the opposite manner to the above arrangement. In other words, the first sensor electrode 810 can be located on the lower surface of the first protective layer IL1 in the direction toward the lower substrate 100, and the second sensor electrode 820 can be located on the upper surface of the first protective layer IL1 in the direction toward the upper substrate 400.

[0165] Figure 24 The display device shown includes a transmissive region TA and further includes the above reference. Figure 22 The sensor electrode 800 is described. In this case, the display device can simultaneously perform the functions of the transparent display device and the touch display device described above. For example, according to some embodiments, the display device can be a display device capable of performing the functions of an input device that provides an input interface between the display device and the user, and a display device capable of simultaneously recognizing an image displayed due to light emission from the light-emitting diode of the display device and a light beam transmitted by the display device through the transmission region TA.

[0166] Although Figure 24 Showing the combination Figure 9 The described display device further includes sensor electrodes 800, but combined with Figure 10 The described display device may further include sensor electrodes 800. Although Figure 24 The display device shown includes the above reference. Figure 22 The description pertains to the sensor electrode 800, but the display device may include the above reference. Figure 21 The sensor electrode 800 described above or referenced above Figure 23 The sensor electrode 800 is described.

[0167] Although only a display device has been described above, the embodiments are not limited thereto. For example, methods for manufacturing a display device according to its structure are also within the scope of this disclosure.

[0168] According to various embodiments, a display device with relatively high luminous efficiency can be realized.

[0169] Although specific embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concept is not limited to such embodiments, but is limited to the broader scope of the appended claims and various obvious modifications and equivalent arrangements that will be apparent to those skilled in the art.

Claims

1. A display device, comprising: The lower substrate includes a display area and a transmissive area; The first pixel electrode, the second pixel electrode, and the third pixel electrode are located above the lower substrate in the display area; An intermediate layer includes an emission layer stacked above each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, the intermediate layer having an opening corresponding to the transmissive region; A counter electrode is located above the intermediate layer, and the counter electrode has an opening corresponding to the transmission region; An encapsulation layer is located on the counter electrode and covers the opening in the intermediate layer and the opening in the counter electrode; The upper substrate has a lower surface located above the lower substrate and facing the lower substrate. The upper substrate includes a first region corresponding to the first pixel electrode, a second region corresponding to the second pixel electrode, a third region corresponding to the third pixel electrode, and a fourth region corresponding to the transmissive region. The fourth region is adjacent to the first region. A light-transmitting layer is located in the first region between the upper substrate and the encapsulation layer; The second color quantum dot layer is located in the second region between the upper substrate and the encapsulation layer; A third color quantum dot layer is located in the third region between the upper substrate and the encapsulation layer; as well as A light-transmitting material layer is located in the fourth region between the upper substrate and the encapsulation layer. The light-transmitting material layer is integrally formed with the light-transmitting layer and includes the same material.

2. The display device according to claim 1, wherein the emitting layer comprises a first color emitting layer and a second color emitting layer.

3. The display device according to claim 2, wherein the intermediate layer further comprises a charge generating layer located between the first color emitting layer and the second color emitting layer.

4. The display device according to claim 2, wherein when viewed in a direction perpendicular to the upper surface of the lower substrate, the area of ​​the first region is equal to the area of ​​the second region.

5. The display device according to any one of claims 1 to 4, further comprising: The first reflective layer is located in the fourth region between the upper substrate and the light-transmitting material layer.

6. The display device according to any one of claims 1 to 4, further comprising: A first color filter layer is located in the first region between the upper substrate and the light-transmitting layer. The first color filter layer has a first-2 opening that exposes the second region, a first-3 opening that exposes the third region, and a first-4 opening that exposes the fourth region. The light-transmitting material layer is disposed in the first-4 openings. A second color filter layer is located in the second region between the upper substrate and the second color quantum dot layer. The second color filter layer includes a portion that fills the first-2 openings and a portion located on the lower surface of the first color filter layer in the direction toward the lower substrate. as well as A third color filter layer is located in the third region between the upper substrate and the third color quantum dot layer, and the third color filter layer fills the first-third opening.

7. The display device according to claim 6, further comprising: The second reflective layer is located in the first region between the upper substrate and the first color filter layer.

8. The display device according to claim 6, further comprising: The second reflective layer is located on the lower surface of the first color filter layer in the first region in the direction toward the lower substrate.

9. The display device according to claim 6, further comprising: The second reflective layer is located on the lower surface of the second color filter layer in the direction toward the lower substrate, between the first region and the second region.

10. The display device according to any one of claims 1 to 4, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; as well as A sensor electrode, surrounding at least a portion of the first region, is located on the upper surface of the first protective layer in the direction toward the upper substrate.

11. The display device according to any one of claims 1 to 4, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; as well as A sensor electrode, surrounding at least a portion of the first region, is located on the lower surface of the first protective layer in a direction toward the lower substrate.

12. The display device according to any one of claims 1 to 4, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; A first sensor electrode, surrounding at least a portion of the first region, is located on the upper surface of the first protective layer in the direction toward the upper substrate; as well as The second sensor electrode overlaps with the first sensor electrode and is located on the lower surface of the first protective layer in the direction toward the lower substrate.

13. A display device, comprising: Lower substrate, including the transmissive region; The first pixel electrode, the second pixel electrode, and the third pixel electrode are located above the lower substrate; An intermediate layer includes an emission layer stacked above each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, the intermediate layer having an opening corresponding to the transmissive region; A counter electrode is located above the intermediate layer, and the counter electrode has an opening corresponding to the transmission region; An encapsulation layer is located on the counter electrode and covers the opening in the intermediate layer and the opening in the counter electrode; The upper substrate has a lower surface located above the lower substrate and facing the lower substrate. The upper substrate includes a first region corresponding to the first pixel electrode, a second region corresponding to the second pixel electrode, a third region corresponding to the third pixel electrode, and a fourth region corresponding to the transmissive region. A dam, located between the upper substrate and the encapsulation layer, has a first opening corresponding to the first region, a second opening corresponding to the second region, a third opening corresponding to the third region, and a fourth opening corresponding to the fourth region; A light-transmitting layer fills the first opening; A second color quantum dot layer fills the second opening; A third color quantum dot layer fills the third opening; as well as A light-transmitting material layer fills the fourth opening.

14. The display device according to claim 13, wherein the emitting layer comprises a first color emitting layer and a second color emitting layer.

15. The display device of claim 14, wherein when viewed in a direction perpendicular to the upper surface of the lower substrate, the area of ​​the first region is equal to the area of ​​the second region.

16. The display device according to any one of claims 13 to 15, further comprising: The first reflective layer is located in the fourth region between the upper substrate and the light-transmitting material layer.

17. The display device according to any one of claims 13 to 15, further comprising: A first color filter layer is located in the first region between the upper substrate and the light-transmitting layer. The first color filter layer has a first-2 opening that exposes the second region, a first-3 opening that exposes the third region, and a first-4 opening that exposes the fourth region. The light-transmitting material layer is disposed in the first-4 openings. A second color filter layer is located in the second region between the upper substrate and the second color quantum dot layer. The second color filter layer includes a portion that fills the first-2 openings and a portion located on the lower surface of the first color filter layer in the direction toward the lower substrate. as well as A third color filter layer is located in the third region between the upper substrate and the third color quantum dot layer, and the third color filter layer fills the first-third opening.

18. The display device according to claim 17, further comprising: The second reflective layer is located in the first region between the upper substrate and the first color filter layer.

19. The display device according to claim 17, further comprising: The second reflective layer is located on the lower surface of the first color filter layer in the first region in the direction toward the lower substrate.

20. The display device according to claim 17, further comprising: The second reflective layer is located on the lower surface of the second color filter layer in the direction toward the lower substrate, between the first region and the second region.

21. The display device according to any one of claims 13 to 15, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; as well as A sensor electrode, surrounding at least a portion of the first region, is located on the upper surface of the first protective layer in the direction toward the upper substrate.

22. The display device according to any one of claims 13 to 15, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; as well as A sensor electrode, surrounding at least a portion of the first region, is located on the lower surface of the first protective layer in a direction toward the lower substrate.

23. The display device according to any one of claims 13 to 15, further comprising: A first protective layer covers the upper surface of the light-transmitting layer in the direction toward the upper substrate; A first sensor electrode, surrounding at least a portion of the first region, is located on the upper surface of the first protective layer in the direction toward the upper substrate; as well as The second sensor electrode overlaps with the first sensor electrode and is located on the lower surface of the first protective layer in the direction toward the lower substrate.

Images