Method for manufacturing a mirror device, and method for manufacturing a mirror unit

Abstract

The manufacturing method of the mirror device of the present application includes: a forming step of forming a structure by processing a wafer to form a base portion, a movable portion, and a connecting portion connecting the base portion and the movable portion to each other in a manner that the movable portion is swingable with respect to the base portion, and forming a mirror layer on the movable portion; and a collecting step of collecting foreign matter of the structure by a collecting member after the forming step. The manufacturing method of the mirror unit of the present application includes: a sealing step of sealing the mirror device after the collecting step.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a mirror device and a method for manufacturing a mirror unit. Background Technology

[0002] As a MEMS (Micro ElectroMechanical Systems) device constructed from an SOI (Silicon On Insulator) substrate, a mirror unit is known, comprising: a structure including a base and a movable portion supported on the base, and a mirror layer disposed on the movable portion. As a method for manufacturing such a mirror unit, sometimes multiple portions corresponding to the structure are formed on a wafer, and then the wafer is cleaned with a cleaning solution (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2006-334697 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] However, in the aforementioned reflector unit, it is desirable to suppress the decrease in reflectivity caused by foreign matter adhering to the reflector layer. In contrast, methods such as removing foreign matter adhering to the reflector layer by blowing air onto it are considered. However, when foreign matter is dispersed by blowing air, the dispersed foreign matter may enter the lower part of the movable part and affect its operation. Therefore, it is desirable to remove foreign matter by other methods.

[0008] The purpose of this disclosure is to provide a method for manufacturing a mirror device that can suppress the influence on the movement of a movable part and remove foreign objects, and a method for manufacturing a mirror unit.

[0009] Technical solutions for solving the problem

[0010] The method for manufacturing the reflector device disclosed herein includes: a forming step in which a base, a movable part, and a connecting part that connects the base and the movable part to each other in a manner in which the movable part can swing relative to the base are formed by processing a wafer, and a reflector layer is formed on the movable part to form a structure; and a collection step in which foreign matter is collected from the structure by a collection member after the forming step.

[0011] In this manufacturing method, a structure is first formed by creating a movable, swingable part and then forming a reflective layer within the movable part. Next, a collecting member is used to collect foreign objects from the structure. Therefore, foreign objects attached to the structure can be removed. Specifically, in this manufacturing method, since foreign objects are collected from the structure, scattered foreign objects do not affect the movement of the movable part. That is, according to this manufacturing method, the influence on the movement of the movable part can be suppressed, and foreign objects can be removed.

[0012] In the manufacturing method of the reflector device disclosed herein, foreign matter can also be collected by having the collecting member only come into contact with the foreign matter during the collection process. In this case, since the collecting member does not directly contact the structure, surface damage to the structure can be avoided.

[0013] Alternatively, the manufacturing method of the reflector device disclosed herein may include: a first inspection step, in which an external inspection of the structure is performed after the forming step and before the collecting step, or during the collecting step. In this case, foreign objects on the structure can be detected and reliably collected through the external inspection.

[0014] In the manufacturing method of the mirror device disclosed herein, if a foreign object is found on the structure during the collection step as a result of the first inspection step, the area where the foreign object exists on the structure can be collected. In this case, the discovered foreign object can be collected more reliably through visual inspection.

[0015] Alternatively, the manufacturing method of the reflector device disclosed herein may include: a first cutting step, in which, after the first inspection step and before the collection step, or during the collection step, if a foreign object is found on the structure as a result of the first inspection step, the foreign object is cut off. In this case, even if the foreign object is firmly attached to the structure, the foreign object can be reliably collected.

[0016] Alternatively, the manufacturing method of the reflector device disclosed herein may include: a second inspection step, after the collection step, performing an external inspection of the structure; and a second cutting step, as a result of the second inspection step, cutting away any foreign matter remaining in the structure, and after the second cutting step, performing the collection step again. In this case, foreign matter that could not be collected in the collection step can be reliably collected.

[0017] In the manufacturing method of the reflector device disclosed herein, foreign matter can also be collected by bringing the collecting component into contact with the entire surface of the structure during the collecting process. In this case, since it is not necessary to know whether there are foreign objects on the structure or their location, visual inspection can be omitted.

[0018] In the manufacturing method of the reflector device disclosed herein, foreign matter can also be collected by bringing a collection member into contact with a portion of the structure during the collection process. In this case, since the area contacted by the collection member with the structure is limited, the extent of potential damage to the structure can be limited. Furthermore, in this case, by pre-determining the portion in contact with the collection member, visual inspection can be omitted.

[0019] In the manufacturing method of the mirror device disclosed herein, foreign matter can also be collected in the collection step using a collection member having a rigidity lower than that of the movable part. In this case, since the collection member deflects preferentially relative to the movable part, deflection of the movable part can be suppressed.

[0020] In the manufacturing method of the reflector device disclosed herein, foreign matter can also be collected by bringing the collecting member into contact with the movable part in a non-bending manner during the collecting process. In this case, damage to the movable part can be suppressed.

[0021] In the manufacturing method of the reflector device disclosed herein, the movable part can also be oscillating about the axis through the connecting part as an oscillation axis. During the collection process, the collecting member is brought into contact with the movable part to collect foreign matter, such that the torque generated at the connecting part based on the force applied to the movable part by the collecting member is less than or equal to the maximum torque at which the oscillation angle of the movable part is reached. In this case, damage to the connecting part that provides the rotation axis of the movable part can be suppressed.

[0022] Alternatively, the manufacturing method of the mirror device disclosed herein may include a wafer-cutting step. In the forming step, multiple portions corresponding to the structure are formed on the wafer. In the cutting step, the wafer is cut so that each of the multiple portions is cut off from the wafer after a collection step. In this case, multiple mirror devices can be manufactured. Specifically, in this case, since foreign matter is collected before wafer cutting, it is possible to prevent the movement of foreign matter on the structure during wafer cutting from affecting the operation of the movable parts. Furthermore, since the portions corresponding to the adjacent multiple structures are integral before the cutting step, they are in a state of high strength. Therefore, damage to the structure is less likely to occur during the collection step.

[0023] Alternatively, the manufacturing method of the reflective device disclosed herein may include a wafer-cutting step. In the forming step, multiple portions corresponding to the structure are formed on the wafer. In the cutting step, the wafer is cut in such a way that each of the multiple portions is cut off from the wafer after the forming step and before the collection step. In this case, multiple reflective devices can be manufactured. In particular, in this case, since foreign matter collection is performed after wafer cutting, foreign matter generated and adhering during wafer cutting can be removed.

[0024] The method for manufacturing a reflector unit disclosed herein includes: a preparation step, in which a reflector device having a structure and a mounting member on which the reflector device is mounted are prepared, the structure including: a base, a movable part, a connecting part that connects the base and the movable part to each other in a manner in which the movable part can swing relative to the base, and a reflector layer disposed on the movable part; an installation step, in which the reflector device is installed after the preparation step; and a collection step, in which foreign matter is collected by the structure of the collection member after the installation step.

[0025] In this manufacturing method, firstly, a reflector device with a structure is prepared, the structure including a movable part with a reflector layer and capable of swinging. Then, after the reflector device is fixed to the mounting part, a collection member is used to collect foreign objects from the structure. Therefore, foreign objects can be removed if they are attached to the structure. In particular, in this manufacturing method, since foreign objects are collected from the structure, scattered foreign objects will not affect the operation of the movable part. That is, according to this manufacturing method, the influence on the operation of the movable part can be suppressed and foreign objects can be removed. Furthermore, in this manufacturing method, foreign object collection is performed after the reflector device is fixed to the mounting part. That is, in this manufacturing method, since foreign object collection is performed in a later process, the risk of foreign objects re-attaching in processes after foreign object collection is reduced.

[0026] Alternatively, the manufacturing method of the reflector unit disclosed herein may include a sealing step, whereby the reflector device is sealed after the collection step. In this case, since foreign matter is collected before sealing the reflector device, the yield is improved.

[0027] Invention Effects

[0028] According to this disclosure, a method for manufacturing a mirror device that can suppress the influence on the movement of the movable part and remove foreign objects, and a method for manufacturing a mirror unit, are provided. Attached Figure Description

[0029] Figure 1 This is a schematic cross-sectional view illustrating the reflector unit of an embodiment.

[0030] Figure 2 This is a top view showing the mirror device of this embodiment.

[0031] Figure 3 It is along Figure 2 The cross-sectional view of the reflector device along line II-II is shown.

[0032] Figure 4 yes Figure 2 The flowchart shows the manufacturing method of the reflector device.

[0033] Figure 5 It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the reflector device shown.

[0034] Figure 6 It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the reflector device shown.

[0035] Figure 7 It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the reflector device shown.

[0036] Figure 8 It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the reflector device shown.

[0037] Figure 9 It is to remove Figure 4 The flowchart of the process for handling foreign objects is shown.

[0038] Figure 10 This is a diagram showing an example of a collection of components.

[0039] Figure 11 This is a schematic side view of the first movable part as viewed from the X-axis direction.

[0040] Figure 12 It is shown Figure 1 A flowchart illustrating the manufacturing method of the mirror unit shown. Detailed Implementation

[0041] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, identical elements or equivalent elements are labeled with the same symbols, and sometimes repeated descriptions are omitted.

[0042] Figure 1 This is a schematic cross-sectional view illustrating the reflector unit of an embodiment. (As shown) Figure 1 As shown, the reflector unit 100 includes: a reflector device 1, a package 40, and a magnetic field generating unit 70 that generates a magnetic field acting on the reflector device 1. The package 40 includes: a mounting substrate 41, a frame member 42, and a window member 43. The reflector device 1 is mounted on the mounting substrate 41 and is electrically connected to the mounting substrate 41 via a wire W.

[0043] The frame member 42 is erected on the mounting surface in such a way that it surrounds the mirror device 1 when viewed from a direction intersecting the mounting surface of the mounting substrate 41 with that of the mirror device 1. The window member 43 is formed into a plate shape using a light-transmitting material such as glass, and is joined to the end of the frame member 42 opposite to the mounting substrate 41. Thus, the mirror device 1 is sealed by the encapsulation 40. As an example, the mirror unit 100 is an optical scanning device used for optical communication optical switches and optical scanners, etc.

[0044] Figure 2 This is a top view showing the mirror device of this embodiment. Figure 3 It is along Figure 2 The diagram shows a cross-sectional view of the reflector device along line II-II. In the following figures, an orthogonal coordinate system defined by the X, Y, and Z axes is sometimes shown. (e.g.) Figure 2 and Figure 3 As shown, the reflector device 1 includes: a structure 2, a reflector layer 3, and a correction layer 4. The reflector device 1 has a linearly symmetrical shape about each of the first axis X1 along the X-axis and the second axis X2 along the Y-axis. However, the shape of the reflector device 1 may also be point-symmetric with respect to the center point of the reflector layer 3 (e.g., the intersection of the first axis X1 and the second axis X2), or it may be asymmetrical rather than linearly or point-symmetric. The reflector device 1 is a MEMS (Micro ElectroMechanical Systems) device (e.g., a MEMS reflector).

[0045] Structure 2 is, for example, made of an SOI substrate. Structure 2 has a support layer 11, a device layer 12, and an intermediate layer 13. The support layer 11 is, for example, a first silicon layer of the SOI substrate. The device layer 12 is, for example, a second silicon layer of the SOI substrate. The intermediate layer 13 is an insulating layer disposed between the support layer 11 and the device layer 12. As an example, the thickness of the support layer 11 is between 100 μm and 700 μm, the thickness of the device layer 12 is between 20 μm and 200 μm, and the thickness of the intermediate layer 13 is between 50 μm and 3000 μm.

[0046] Structure 2 is, for example, in the form of a rectangular plate. Structure 2 has a first surface 2a and a second surface 2b. The first surface 2a is the side of device layer 12 opposite to the intermediate layer 13. The second surface 2b is the side of structure 2 opposite to the first surface 2a. The second surface 2b includes: the side of support layer 11 opposite to the intermediate layer 13, and the side of device layer 12 opposite to the first surface 2a.

[0047] Structure 2 is integrally formed from a base portion 21, a first movable portion 22, a second movable portion 23, a pair of first connecting portions 24, and a pair of second connecting portions 25. The base portion 21 is composed of a portion of a support layer 11, a portion of a device layer 12, and a portion of an intermediate layer 13. When viewed from the Z-axis direction (the thickness direction of structure 2), the base portion 21 appears as a rectangular ring. When viewed from the Z-axis direction, the base portion 21 has dimensions of, for example, 10 mm × 15 mm.

[0048] The first movable part 22, the second movable part 23, the first connecting part 24, and the second connecting part 25 are formed by a portion of the device layer 12. The first movable part 22 and the second movable part 23 are supported on the base 21. Specifically, when viewed from the Z-axis direction, the first movable part 22 and the second movable part 23 are disposed inside the base 21. More specifically, when viewed from the Z-axis direction, the second movable part 23 is disposed inside the base 21 via a second slit 23a that passes through the structure 2. When viewed from the Z-axis direction, the second movable part 23 is, for example, rectangular annular. When viewed from the Z-axis direction, the second slit 23a extends along the outer edge of the second movable part 23. In the second slit 23a, the end face 11a of the support layer 11 of the base 21, the end face 12a of the device layer 12 of the base 21, and the end face 13a of the intermediate layer 13 of the base 21 are exposed.

[0049] Viewed from the Z-axis direction, each second connecting portion 25 is disposed on both sides of the second movable portion 23 in the Y-axis direction. Each second connecting portion 25 extends linearly along the Y-axis direction, for example. Each second connecting portion 25 connects the second movable portion 23 and the base 21 to each other along the second axis X2, such that the second movable portion 23 can swing about the second axis X2. Furthermore, the second slit 23a includes portions extending along the Y-axis direction on both sides of each second connecting portion 25 in the X-axis direction. That is, each second connecting portion 25 is disposed inside the base 21 via the second slit 23a.

[0050] Viewed from the Z-axis direction, the first movable part 22 is disposed inside the second movable part 23 via a first slit 22a penetrating the structure 2. Viewed from the Z-axis direction, the first movable part 22 is, for example, rectangular in shape. Viewed from the Z-axis direction, the first slit 22a extends along the outer edge of the first movable part 22.

[0051] Viewed from the Z-axis direction, each first connecting portion 24 is disposed on both sides of the first movable portion 22 in the X-axis direction. Each first connecting portion 24 extends linearly along the X-axis direction, for example. Each first connecting portion 24 connects the first movable portion 22 and the second movable portion 23 to each other on the first axis X1 such that the first movable portion 22 can swing about the first axis X1 along the X-axis direction.

[0052] A reflective mirror layer 3 is disposed on the first movable part 22. Specifically, the reflective mirror layer 3 is disposed in the region corresponding to the first movable part 22 on the first surface 2a of the structure 2. When viewed from the Z-axis direction, the reflective mirror layer 3 is, for example, circular in shape. The reflective mirror layer 3 is positioned with the intersection of the first axis X1 and the second axis X2 as its center position (center of gravity position). The reflective mirror layer 3 is, for example, composed of a reflective film, which is made of aluminum, aluminum alloys, silver, silver alloys, gold, dielectric multilayer films, etc.

[0053] The correction layer 4 is formed integrally on the second surface 2b. Specifically, the correction layer 4 is formed at the base 21 on the side of the support layer 11 opposite to the intermediate layer 13. The correction layer 4 is formed at the first movable portion 22, the second movable portion 23, each of the first connecting portions 24, and each of the second connecting portions 25 on the side of the device layer 12 opposite to the mirror layer 3. The correction layer 4 corrects warpage of the first movable portion 22, the second movable portion 23, each of the first connecting portions 24, and each of the second connecting portions 25. The correction layer 4 is, for example, composed of an inorganic film such as silicon oxide or silicon nitride, or a metal thin film such as aluminum. The thickness of the correction layer 4 is, for example, between 10 nm and 1000 nm.

[0054] The reflector device 1 also includes a first coil 221 and a second coil 231. The first coil 221 is, for example, embedded in a first movable portion 22, and extends spirally along the outer edge of the first movable portion 22 when viewed from the Z-axis direction. The second coil 231 is, for example, embedded in a second movable portion 23, and extends spirally along the outer edge of the second movable portion 23 when viewed from the Z-axis direction. The first coil 221 and the second coil 231 are, for example, made of a metallic material such as copper. Furthermore, in Figure 3 The diagrams of the first coil 221 and the second coil 231 are omitted.

[0055] In the mirror device 1 configured as described above, the first movable part 22, on which the mirror layer 3 is provided, oscillates around a mutually orthogonal first axis X1 and a second axis X2. Specifically, when a drive signal for linear operation is input to the second coil 231 via the electrode pads 5 and wiring provided on the structure 2, a Lorentz force is applied to the second coil 231 through interaction with the magnetic field generated by the magnetic field generating part 70. By utilizing the balance between this Lorentz force and the elastic force of each second connecting part 25, the mirror layer 3 (first movable part 22) and the second movable part 23 can move linearly together around the second axis X2.

[0056] On the other hand, when a drive signal for resonant operation is input to the first coil 221 via the electrode pads 5 and wiring, a Lorentz force is applied to the first coil 221 through interaction with the magnetic field generated by the magnetic field generating unit 70. In addition to this Lorentz force, the mirror layer 3 (first movable part 22) can also resonate around the first axis X1 by utilizing the resonance of the first movable part 22 at the resonant frequency.

[0057] Here, as an example, electrode pads 5 are disposed on the base 21. More specifically, electrode pads 5 are disposed in the region corresponding to the base 21 on the first surface 2a of the structure 2. The structure 2 includes: a base 21, a first movable part 22, a second movable part 23, a pair of first connecting parts 24, and a pair of second connecting parts 25. In addition, the structure 2 and the reflector layer 3 disposed on the first movable part 22 constitute another structure 7. The structure 7 may also include electrode pads 5 and a correction layer 4.

[0058] Next, the manufacturing method of the reflector device 1 will be described. First, as follows... Figure 4 and Figure 5 As shown in (a), a wafer 10W having a support layer 11, a device layer 12, and an intermediate layer 13 is prepared (step S1). The wafer 10W has a surface 10a and a back surface 10b opposite to the surface 10a. Surface 10a is the surface that becomes the first surface 2a of structure 2. The wafer 10W includes multiple portions 11W, each of which becomes structure 2 (i.e., structure 7). The portions 11W are part of the wafer 10W before the structure 2 is formed. Each step of the manufacturing method of the mirror device 1 is performed at the wafer level. Furthermore, in Figures 5-8 The image shows a portion 11W of wafer 10W. The following description focuses on a portion 11W of wafer 10W.

[0059] Next, the wafer 10W prepared in step S1 is processed. As a general outline of the subsequent process, a portion of each of the support layer 11, device layer 12, and intermediate layer 13 is removed from the wafer 10W by etching, thereby forming multiple portions 12WA on the wafer 10W, each corresponding to the structure 2 (see reference). Figure 8 (b)). Part 12WA is a portion of the wafer 10W on which structure 2 is formed. As described later, a mirror layer 3, an electrode pad 5, and a correction layer 4 are formed in part 12WA. Therefore, the portion including part 12WA, mirror layer 3, electrode pad 5, and correction layer 4 will sometimes be referred to as part 17WA corresponding to structure 7.

[0060] The following steps will be described in more detail. In the manufacturing method of the mirror device 1, following step S1, firstly, a portion of the device layer 12 is removed from the wafer 10W by etching (step S2). Specifically, the portions of the device layer 12 corresponding to the first slit 22a and the second slit 23a are removed. As a result, the end face 12a of the device layer 12 is formed. In step S2, the first coil 221, the second coil 231, and electrode pads 5 and wiring for inputting drive signals to the first coil 221 and the second coil 231 are disposed on the device layer 12. In step S2, the mirror layer 3 is formed on the surface 10a of the wafer 10W in the portion corresponding to the first movable part 22. The mirror layer 3 is formed, for example, by metal vapor deposition. In step S2, the resist used to remove the device layer 12 is removed from the wafer 10W by cleaning to remove the resist.

[0061] Next, as Figure 5 As shown in (b), the back surface 10b of wafer 10W is ground (step S3). Wafer 10W is thinned by grinding the back surface 10b. The ground back surface 10b of wafer 10W is a surface that becomes part of the second surface 2b of structure 2.

[0062] Next, as Figure 6 As shown in (a), resist 19 is patterned on the back surface 10b of wafer 10W (step S4). Specifically, resist 19 is provided in the area of ​​the back surface 10b corresponding to the substrate 21. Next, as... Figure 6 As shown in (b), a portion of the support layer 11 is removed from the wafer 10W by etching via resist 19 (step S5). Specifically, the portion of the support layer 11 that is further inward than the portion corresponding to the substrate 21 is removed. As a result, end face 11a of the support layer 11 is formed. The portion of the support layer 11 is removed by, for example, reactive ion etching (DRIE) using a Bosch process. Furthermore, in step S5, when removing the portion of the support layer 11 from the wafer 10W, a protective film, such as a polymer, is used.

[0063] Next, cleaning is performed (step S6). First, cleaning is performed here to remove (strip) the resist 19 from the back surface 10b of the wafer 10W. Thus, as... Figure 7 As shown in (a), the resist 19 is removed from the wafer 10W. Next, cleaning is performed to remove the polymer, etc., used as a protective film in step S5 from the wafer 10W.

[0064] Next, as Figure 7As shown in (b), a portion of the intermediate layer 13 is removed from the wafer 10W by etching (step S7). Specifically, the portion of the intermediate layer 13 that is further inward than the portion corresponding to the base 21 is removed. As a result, a first slit 22a and a second slit 23a are formed. At this time, an end face 13a of the intermediate layer 13 is formed. In step S7, by forming the first slit 22a and the second slit 23a, multiple portions 12WA corresponding to the structure 2 are formed on the wafer 10W, completing the multiple portions 12WA. That is, multiple first movable portions 22 and multiple second movable portions 23 are released. In step S7, a portion of the intermediate layer 13 is removed from the wafer 10W by dry etching.

[0065] Next, as Figure 8 As shown in (a), a correction layer 4 is formed on the surface of wafer 10W opposite to the surface where the mirror layer 3 is formed (surface 10a) (the surfaces of support layer 11 and device layer 12 opposite to the mirror layer 3) (step S8). As described above, the mirror layer 3 and electrode pads 5 have already been formed in portion 12WA. Therefore, by forming the correction layer 4 in step S8, a portion 17WA comprising portion 12WA, mirror layer 3, electrode pads 5, and correction layer 4 is formed. Then, as... Figure 8 As shown in (b), the wafer 10W is cut off in a manner that each of the multiple portions 12WA (i.e., the multiple portions 17WA corresponding to the structure 7) is cut out from the wafer 10W (step S10). As a result, multiple mirror devices 1 are manufactured.

[0066] Through steps S2 to S8 above, a structure 7 is formed relative to the wafer 10W, comprising a structure 2 and a mirror layer 3 (and electrode pads 5 and a correction layer 4) disposed on the structure 2. That is, steps S2 to S8 correspond to the formation process in which a base 21, a first movable portion 22, a second movable portion 23, a pair of first connecting portions 24, and a pair of second connecting portions 25 are formed by processing the wafer 10W, and a mirror layer 3 (and electrode pads 5 and correction layer 4) is formed on the first movable portion 22 to form the structure 7. Alternatively, the formation process may not include step S8. In this case, the structure 7 does not have a correction layer 4. Furthermore, the above example is an example where the mirror layer 3 is formed on the surface 10a of the wafer 10W corresponding to the first movable portion 22, and then the first movable portion 22 is formed (released) by processing the wafer 10W, resulting in the formation of the mirror layer 3 on the first movable portion 22. Alternatively, the mirror layer 3 may not be formed on the portion of the surface 10a of the wafer 10W corresponding to the first movable portion 22. Instead, the mirror layer 3 may be formed on the first movable portion 22 after the wafer 10W has been processed and the first movable portion 22 has been formed (after release). Either case includes the formation process of forming the base 21, the first movable portion 22, the second movable portion 23, a pair of first connecting portions 24, and a pair of second connecting portions 25 by processing the wafer 10W, and forming the mirror layer 3 on the first movable portion 22, thereby forming the structure 7.

[0067] In the manufacturing method of the reflector device 1, a process for removing foreign matter from the reflector layer 3 is performed between steps S8 and S10 (step S9). Next, step S9 will be described in detail.

[0068] Figure 9 It is to remove Figure 4 The flowchart shows the process for removing foreign matter. Here, the following process (step S9) for removing foreign matter is performed on the first surface 2a side (i.e., the surface 10a side of the wafer 10W, the side of the mirror layer 3) of the structure 7 (part 17WA). However, the process for removing foreign matter can also be performed on the second surface 2b side (i.e., the back surface 10b side of the wafer 10W) ​​of the structure 7. Alternatively, the process for removing foreign matter can be performed on both the first surface 2a side and the second surface 2b side.

[0069] Figure 9 (a) shows the first example of a process for removing foreign matter. For example... Figure 9As shown in (a), in this first example, firstly, a visual inspection of structure 7 (part 17WA) is performed (step S101, first inspection step). This determines whether foreign objects are present on structure 7 and the area where such foreign objects are located. Therefore, as a result of step S101, if a foreign object is found on structure 7, the foreign object is cut off (step S102, first cutting step). However, step S102 can also be omitted.

[0070] Next, foreign object collection (foreign object pickup) is performed on the structure 7 using the collection member (step S103, collection process). In this step S103, as a result of step S101, if a foreign object is found on the structure 7, the area where the foreign object is located is collected. Methods for collecting the foreign object include using electrostatic force to attach the foreign object to the collection member, or using adhesive force to attach the foreign object to the collection member. Alternatively, a suction nozzle or similar device can be used to attract the foreign object. That is, foreign object collection here sometimes refers to collecting a specific foreign object without contacting it (e.g., using electrostatic force or attraction force), and sometimes refers to collecting a specific foreign object by contacting it (e.g., using adhesive force).

[0071] In this first example, it is possible to use Figure 10 The collection component 90 is shown. Figure 10 (a) is a side view showing the overall collection of components. Figure 10 (b) is a perspective view showing the front end of the collecting component. Figure 10 The collection member 90 shown has a processing section 91 and an attachment section 92 provided at the front end of the processing section 91. As an example, the processing section 91 is in the shape of a long rod, which can be used for the operator to hold or for, for example, the assembly of a device.

[0072] The attachment portion 92 is made of, for example, an electrostatically charged film (or tape or feather) or an adhesive film (or tape). The attachment portion 92 is formed as a cone that tapers in the direction from the base end 92b connected to the processing portion 91 toward the front end 92a. More specifically, the width D1 of one opposite side of the attachment portion 92 is constant from the base end 92b to the front end 92a, while the width D2 of the other opposite side of the attachment portion 92 decreases from the base end 92b toward the front end 92a. The length D3 of the attachment portion 92, which represents the distance from the base end 92b to the front end 92a, is, for example, several times (e.g., about 5 times) the widths D1 and D2 of the attachment portion 92 at the base end 92b. As an example, the widths D1 and D2 of the attachment portion 92 at the base end 92b are the same. The rigidity of the attachment portion 92 is less than that of the first movable portion 22 and the second movable portion 23.

[0073] In step S103, the collecting member 90 is brought into contact only with the foreign object, without directly contacting the structure 7. In other words, in step S103, the collecting member 90 contacts the structure 7 via the foreign object. In step S103, when the collecting member 90 contacts the first movable part 22 or the second movable part 23 (via the foreign object), from the viewpoint of avoiding damage to the first movable part 22 and the second movable part 23, the collecting member 90 is brought into contact with the first movable part 22 or the second movable part 23 in a manner that prevents the first movable part 22 and the second movable part 23 from bending, so as to collect the foreign object. Furthermore, when the collecting member 90 contacts the first movable part 22, in addition to the case where it is only contacted via the foreign object (where the foreign object is located in the part of the first movable part 22 other than the part where the reflector layer 3 is provided), there is also the case where it is contacted via both the foreign object and the reflector layer 3 (where the foreign object is located on the reflector layer 3). Furthermore, in step S103, the collecting member 90 is brought into contact with the first movable part 22 in a manner that avoids damage to the first connecting part 24 used to connect the first movable part 22 (via the second movable part 23 and the second connecting part 25) to the base 21. This will be explained in more detail.

[0074] As described above, the first connecting part 24 connects the first movable part 22 (via the second movable part 23 and the second connecting part 25) to the base 21 in such a way that the first movable part 22 can swing about the first axis X1 along the X-axis direction. In other words, the first movable part 22 can swing with the axis passing through the first connecting part 24, i.e., the first axis X1, as the swing axis. Figure 11 This is a schematic side view of the first movable part 22 as viewed from the X-axis direction.

[0075] like Figure 11 As shown, the first axis X1 passes through the center C of the first movable part 22 in the Y-axis direction. When the spring constant of the swing direction of the first connecting part 24 is set to the spring constant k... θ When the swing of the first movable part 22 about the first axis X1 is set to the maximum angle θ, the torque T required is given by the spring constant k. θ × represents the maximum angle θ. As an example, in the case of a spring constant k... θ It is 5.7 × 10 -6 With [Nm / rad] and a maximum angle θ of 9°, the torque becomes T = 8.98 × 10⁻⁶. -7 ≈1×10 -6 [Nm].

[0076] When the collecting member 90 contacts the point at the furthest distance A from the center C of the first movable part 22, the first connecting part 24 is subjected to the maximum torque. This torque, where the maximum angle θ is applied, is the torque T divided by the force F exerted by the collecting member 90 on the first movable part 22. For example, the distance A is 1.575 × 10⁻⁶. -3 In the case of [m], the force F becomes 8.98 × 10 -7 / 1.575×10 -3 =5.7×10 -4 ≈6×10 -4 [N]. In order to prevent damage to the first connecting part 24, the force applied to the first movable part 22 from the collecting member 90 should be less than or equal to this force F.

[0077] That is, in step S103, the collecting member 90 is brought into contact with the first movable part 22 to collect foreign objects, such that the torque generated in the first connecting part 24 by the force applied from the collecting member 90 to the first movable part 22 is less than or equal to the torque T at which the swing angle of the first movable part 22 is the maximum angle θ. However, in order to reliably suppress breakage even when the collecting member 90 is brought into contact with the first movable part 22 multiple times to collect foreign objects, it is preferable that in step S103, the collecting member 90 is brought into contact with the first movable part 22 to collect foreign objects, such that the torque generated in the first connecting part 24 by the force applied from the collecting member 90 to the first movable part 22 is less than or equal to the torque at which the swing angle of the first movable part 22 is half the maximum angle θ. Furthermore, the above values ​​are merely examples and can vary within a range of, for example, 100 times, depending on the setting of the spring constant of the first connecting part 24.

[0078] on the other hand, Figure 9 (b) is a flowchart illustrating a second example of the process for removing foreign objects. In this second example, foreign object collection from the structure 7 by the collecting member is also performed (step S103, collection process). However, in this example, the collecting member is brought into contact with the entire surface of the structure 7 to collect the foreign object. In this case, the collecting member covering the entire surface of the structure 7 may be brought into contact with the structure 7 to collect the foreign object, or the collecting member corresponding to a part of the structure 7 may be brought into contact with the entire surface of the structure 7 multiple times to collect the foreign object. In this case, the collecting member may also have a lower rigidity than the first movable part 22 and the second movable part 23.

[0079] In this second example, step S101 for visual inspection can be omitted. That is, in this second example, foreign matter collection can be performed regardless of whether there is foreign matter on structure 7. However, step S101 can also be performed in this second example. When step S101 is performed in the second example, it is only necessary to know whether there is foreign matter on structure 7, and it is not necessary to know the area where foreign matter exists on structure 7 (which can also be known). In addition, step S102 for cutting off foreign matter can also be performed in this second example.

[0080] As described above, in the manufacturing method of the mirror device 1, after performing the foreign matter removal step S9, step S10 is performed to cut the wafer 10W in such a way that each of the plurality of portions 12WA (i.e., the plurality of portions 17WA) is cut from the wafer 10W. Furthermore, the order of steps S9 and S10 can also be reversed. That is, the wafer 10W can be cut in step S10 in such a way that each of the plurality of portions 12WA (i.e., the plurality of portions 17WA) is cut from the wafer 10W before foreign matter collection in step S9.

[0081] Next, the manufacturing method of the reflector unit 100 will be described. Figure 12 It is shown Figure 1 A flowchart illustrating the manufacturing method of the mirror unit shown. Figure 12 As shown, in this manufacturing method, firstly, a reflector device 1 is prepared (step S20, preparation process). When manufacturing the reflector device 1, the above-described manufacturing method for the reflector device 1 can be implemented.

[0082] Next, the reflector device 1 is fixed to the mounting substrate (mounting part) 41 (step S21, fixing process). The fixation of the reflector device 1 to the mounting substrate 41 can be performed by, for example, adhesive, fitting, or tightening. Next, by providing a wire W between the reflector device 1 and the mounting substrate 41, the reflector device 1 is electrically connected to the mounting substrate 41, and the reflector device 1 is mounted on the mounting substrate 41 (step S22). Next, foreign matter is collected by the structure 7 of the collecting member (step S23, collecting process). This step S23 can be performed in the same way as step S9 of the above-described method for manufacturing the reflector device 1. In addition, the order of steps S22 and S23 can also be reversed. Next, for example, by joining the window member 43 to the frame member 42, the reflector device 1 is sealed by the encapsulation 40 (step S24, sealing process). As described above, the reflector unit 100 is manufactured.

[0083] As explained above, in the manufacturing method of the reflector device 1, firstly, a structure 7 is formed by forming a movable first part 22 and then forming a reflector layer 3 on the first movable part 22. Then, a collecting member 90 is used to collect foreign objects from the structure 7. Therefore, foreign objects attached to the structure 7 are removed. Specifically, in this manufacturing method, since foreign objects are collected from the structure 7, scattered foreign objects do not affect the operation of the first movable part 22, etc. That is, according to this manufacturing method, the influence on the operation of the first movable part 22, etc., can be suppressed, and foreign objects can be removed. In particular, if foreign objects are removed from the reflector layer 3 in the structure 7, the decrease in reflectivity caused by foreign objects can be suppressed.

[0084] Alternatively, in the manufacturing method of the reflector device 1, the foreign object can be collected by having the collecting member 90 contact only with the foreign object during the collection process (step S103, hereinafter the same). In this case, since the collecting member 90 does not directly contact the structure 7, surface damage to the structure 7 is avoided.

[0085] Alternatively, the manufacturing method of the reflector device 1 may include a first inspection step (step S101 (hereinafter the same)) to perform an appearance inspection of the structure 7 before the collection step. In this case, foreign objects on the structure 7 can be detected and reliably collected through appearance inspection.

[0086] Furthermore, in the manufacturing method of the reflector device 1, if a foreign object is found on the structure 7 during the collection process as a result of the first inspection process, the area where the foreign object exists on the structure 7 can be collected. In this case, the discovered foreign object can be collected more reliably through visual inspection.

[0087] Alternatively, the manufacturing method of the reflector device 1 can include a cutting step (step S102 (hereinafter the same)) to remove foreign objects if they are found on the structure 7 as a result of the first inspection step, after the first inspection step and before the collection step. In this case, the foreign object can be reliably collected even if it is firmly attached to the structure 7.

[0088] Alternatively, in the manufacturing method of the reflector device 1, foreign matter can be collected by bringing the collecting member 90 into contact with the entire surface of the structure 7 during the collection process. In this case, since it is not necessary to know the location of the foreign matter attached to the structure 7, visual inspection can be omitted.

[0089] Alternatively, in the manufacturing method of the reflector device 1, foreign matter can be collected during the collection process using a collection member 90 (attachment portion 92) with less rigidity than the first movable portion 22 and the second movable portion 23. In this case, since the collection member 90 (attachment portion 92) deflects preferentially relative to the first movable portion 22 and the second movable portion 23, deflection of the first movable portion 22 and the second movable portion 23 can be suppressed.

[0090] Furthermore, in the manufacturing method of the reflector device 1, during the collection process, the collection member 90 can be brought into contact with the first movable part 22 or the second movable part 23 in a manner that prevents the first movable part 22 and the second movable part 23 from bending, thereby collecting foreign objects. In this case, damage to the first movable part 22 and the second movable part 23 can be suppressed.

[0091] Furthermore, in the manufacturing method of the reflector device 1, the first movable part 22 is capable of swinging along the first axis X1 via the first connecting part 24 as a swing axis. Moreover, during the collection stroke, the collecting member 90 can be brought into contact with the reflector layer 3 to collect foreign objects in a manner where the torque generated in the first connecting part 24 based on the force applied to the first movable part 22 by the collecting member 90 is less than or equal to the torque T at which the swing angle of the first movable part 22 reaches its maximum angle θ. Therefore, damage to the first connecting part 24, which provides the swing axis of the first movable part 22, can be suppressed.

[0092] Furthermore, the manufacturing method of the reflector device 1 includes a cutting process (step S11 (hereinafter the same)) for cutting the wafer 10W. In the forming process, multiple portions 17WA corresponding to the structure 7 are formed on the wafer 10W. In the cutting process, the wafer 10W is cut off such that each of the multiple portions 17WA is cut off from the wafer 10W after the collection process. This allows the manufacture of multiple reflector devices 1. In particular, since foreign matter is collected before cutting the wafer 10W, it is possible to prevent the movement of foreign matter on the structure 7 during wafer 10W cutting from affecting the operation of the first movable part 22 and the second movable part 23. Additionally, since the portions 17WA corresponding to the adjacent multiple structures 7 are integral before the cutting process, they are in a state of high strength. Therefore, damage to the structure 7 is less likely to occur during the collection process.

[0093] Furthermore, the manufacturing method of the reflector device 1 includes a cutting step for cutting the wafer 10W. Moreover, in the forming step, multiple portions 17WA corresponding to the structure 7 can be formed on the wafer 10W, and in the cutting step, the wafer 10W can be cut off individually from the wafer 10W after the forming step and before the collection step. Thus, multiple reflector devices 1 can be manufactured. In particular, foreign matter collection is performed after cutting the wafer 10W, therefore, foreign matter generated and adhering during the cutting of the wafer 10W can be removed.

[0094] In the manufacturing method of the mirror unit 100, a mirror device 1 having a structure 7 is prepared. The structure 7 includes a first movable part 22 on which a mirror layer 3 is provided and which is swayable. Then, after the mirror device 1 is installed, a collection member 90 is used to collect foreign objects from the structure 7. Therefore, if foreign objects are attached to the structure 7, they can be removed. In particular, in this manufacturing method, since the foreign objects in the structure 7 are collected, scattered foreign objects will not affect the operation of the first movable part 22, etc. That is, according to this manufacturing method, the influence on the operation of the first movable part 22, etc., can be suppressed and foreign objects can be removed. In addition, in the manufacturing method of the mirror unit 100, foreign object collection is performed after the mirror device 1 is fixed to the mounting substrate 41. That is, in this manufacturing method, since foreign object collection is performed in a later process, the risk of foreign objects re-attaching in processes after foreign object collection is reduced.

[0095] Furthermore, the manufacturing method of the reflector unit 100 includes a sealing process (step S24) after the collection process (step S23), sealing the reflector device 1. Thus, since foreign matter is collected before sealing the reflector device 1, the yield is improved.

[0096] The above embodiments illustrate one form of this disclosure. Therefore, this disclosure is not limited to the above form and any modifications are possible.

[0097] For example, the second movable part 23 can be omitted from the reflector device 1, making it a uniaxial reflector device. In addition, the driving method of the reflector device 1 can be piezoelectric or electrostatic.

[0098] Furthermore, in the above embodiment, an example is shown where multiple portions 17WA corresponding to the structure 7 are formed on the wafer 10W, and each portion 17WA is cut out from the wafer 10W. However, a single structure 7 may also be formed on the wafer 10W.

[0099] Furthermore, in the aforementioned method for manufacturing the reflector device 1, as a second example of the foreign object removal process (step S9 (hereinafter the same)), an example is given where the foreign object is collected by bringing the collecting member into contact with the entire surface of the structure 7 during the collection process. However, as another example of the foreign object removal process, the foreign object can also be collected by bringing the collecting member into contact with a portion of the structure 7 during the collection process. In this case, a portion of the structure 7 refers to a portion larger than the portion corresponding to a foreign object, but not reaching the entire surface. In this case, since the area contacted by the collecting member 90 of the structure 7 is limited, the range of possible damage to the structure 7 can be limited. Moreover, in this case, by pre-determining the portion in contact with the collecting member 90, visual inspection can be omitted.

[0100] Furthermore, the manufacturing method of the aforementioned reflector device 1 may also include, in the process of removing foreign matter, a second inspection step, which performs an appearance inspection of the structure 7 after the collection step; and a second cutting step, which, as a result of the second inspection step, cuts away any remaining foreign matter in the structure 7. In this case, the collection step can be performed again after the second cutting step. In this case, the foreign matter can be reliably collected. Moreover, even in this case, the second cutting step can be omitted.

[0101] Furthermore, in the manufacturing method of the aforementioned mirror device 1, a first cutting step to remove foreign matter is performed after the first inspection step and before the collection step. However, the first cutting step may also be performed simultaneously with the collection step (i.e., foreign matter may be removed while collection is underway). That is, the first cutting step may be performed after the first inspection step and before the collection step, or during the collection step.

[0102] Furthermore, in the manufacturing method of the aforementioned mirror device 1, a first inspection step for visually inspecting the structure 7 is performed after the forming step and before the collection step. However, the first inspection step may also be performed simultaneously with the collection step (i.e., visual inspection may be performed while foreign objects are being collected). That is, the first inspection step may be performed after the forming step and before the collection step, or during the collection step. The simultaneous performance of the first inspection step and the collection step is equivalent to, for example, after the initial visual inspection of the structure 7, collecting any foreign objects found in a portion of the structure 7, and performing visual inspection of other parts of the structure 7, etc.

[0103] Furthermore, in the aforementioned method for manufacturing the reflector device 1, an example was described where the entire structure 7 was collected as a foreign object during the foreign object removal process. In contrast, during the foreign object removal process, individual parts of the structure 7, such as the reflector layer 3, the base 21, or the electrode pads 5, can also be collected as foreign objects. If the reflector layer 3 is collected as a foreign object during the foreign object removal process, the decrease in reflectivity of the reflector layer 3 caused by foreign objects adhering to it can be suppressed.

[0104] Furthermore, if the electrode pads 5 are targeted for foreign object collection during the foreign object removal process, poor connection between the wiring and the electrode pads 5 can be suppressed. Thus, when each part of the structure 7, such as the mirror layer 3, the base 21, or the electrode pads 5, is targeted, the above-described processes can be applied to foreign object collection for each part by referring to the structure 7 as each part. Moreover, even when the entire structure 7 is targeted for foreign object collection, removing foreign objects from the mirror layer 3 suppresses a decrease in the reflectivity of the mirror layer 3, and removing foreign objects from the electrode pads 5 suppresses poor connection of the electrode pads 5.

[0105] Furthermore, in the above-described method for manufacturing the reflector unit 100, an example of fixing and mounting the reflector device 1 to the mounting substrate 41 is given, but it is not limited to the case where the reflector device 1 is directly disposed, fixed, and mounted on the magnetic field generating unit 70, etc., or the reflector device 1 is fixed and mounted on the mounting substrate 41. That is, the magnetic field generating unit 70, etc., can also be a mounting unit for mounting the reflector device 1.

[0106] In addition, in the above-described manufacturing method of the reflector unit 100, the above-described process of removing foreign matter can also be performed on the second surface 2b side of the structure 7 (the side opposite to the reflector layer 3) after the reflector device 1 has been prepared (after the preparation process) and before the reflector device 1 has been installed (before the installation process).

[0107] Industrial availability

[0108] According to this disclosure, a method for manufacturing a mirror device that can suppress the influence on the movement of a movable part and remove foreign objects is provided, as well as a method for manufacturing a mirror unit.

[0109] Symbol Explanation

[0110] 1…reflector device, 3…reflector layer, 7…structure, 10W…wafer, 21…base, 22…first movable part, 24…first connecting part, 90…collecting component, 100…reflector unit.

Claims

1. A method for manufacturing a reflective mirror device, wherein, have: The forming process involves forming a base, a movable part, and a connecting part that connects the base and the movable part to each other in a manner that allows the movable part to swing relative to the base through wafer processing, and forming a reflective layer on the movable part to form a structure. as well as The collection process, following the formation process, involves the collection of foreign matter from the structure by the collection component. The movable part is capable of swinging about the axis passing through the connecting part as the swing axis. In the collection process, the foreign object is collected by bringing the collection member into contact with the movable part in such a way that the torque generated in the connecting part by the force applied by the collection member to the movable part is less than or equal to the torque at an angle that makes the swing angle of the movable part reach half of the maximum angle.

2. The method for manufacturing the reflective device according to claim 1, wherein, In the collection process, the collection component is brought into contact with the foreign object to collect it.

3. The method for manufacturing the reflector device according to claim 1 or 2, wherein, It includes: a first inspection step, which performs an appearance inspection of the structure after the forming step and before the collecting step, or during the collecting step.

4. The method for manufacturing the reflective device according to claim 3, wherein, In the collection process, if the foreign object is found on the structure as a result of the first inspection process, the foreign object is collected from the area of ​​the structure where the foreign object exists.

5. The method for manufacturing the reflector device according to claim 3 or 4, wherein, It includes: a first cutting process, which, after the first inspection process and before the collection process, or during the collection process, cuts the foreign object when it is found on the structure as a result of the first inspection process.

6. The method for manufacturing the reflector device according to any one of claims 1 to 5, wherein, have: The second inspection step, following the collection step, involves performing an external inspection of the structure; and The second cutting process, as a result of the second inspection process, involves cutting away the foreign object if it remains in the structure. The collection process is performed again after the second cutting process.

7. The method for manufacturing the reflective device according to claim 1, wherein, In the collection process, the foreign object is collected by bringing the collection component into contact with the entire surface of the structure.

8. The method for manufacturing the reflective device according to claim 1, wherein, In the collection process, the foreign object is collected by bringing the collection component into contact with a part of the structure.

9. A method for manufacturing a reflective device according to any one of claims 2, 7, and 8, wherein, In the collection process, the foreign object is collected by the collection member having a rigidity less than that of the movable part.

10. A method for manufacturing a reflective device according to any one of claims 1 to 9, wherein, In the collection process, the foreign object is collected by making the collection member contact the movable part in a non-bending manner.

11. The method for manufacturing the reflector device according to any one of claims 1 to 10, wherein, It has a cutting process for cutting the wafer. In the forming process, multiple portions corresponding to the structure are formed on the wafer. In the cutting process, the wafer is cut in such a way that each of the plurality of portions is cut off from the wafer after the collection process.

12. The method for manufacturing the reflector device according to any one of claims 1 to 10, wherein, It has a cutting process for cutting the wafer. In the forming process, multiple portions corresponding to the structure are formed on the wafer. In the cutting process, the wafer is cut in such a way that each of the plurality of portions is cut off from the wafer after the forming process and before the collecting process.

13. A method for manufacturing a reflector unit, wherein, have: Preparation process: Prepare a reflector device with a structure, the structure comprising: a base, a movable part, a connecting part that connects the base and the movable part to each other in a manner in which the movable part can swing relative to the base, and a reflector layer disposed on the movable part. The fixing process involves fixing the reflector device to the mounting part after the preparation process; as well as The collection process, following the fixing process, involves the collection of foreign matter from the structure by the collection component. The movable part is capable of swinging about the axis passing through the connecting part as the swing axis. In the collection process, the foreign object is collected by bringing the collection member into contact with the movable part in such a way that the torque generated in the connecting part by the force applied by the collection member to the movable part is less than or equal to the torque at an angle that makes the swing angle of the movable part reach half of the maximum angle.

14. The method for manufacturing a reflector unit according to claim 13, wherein, It includes a sealing process, which seals the reflector device after the collection process.

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