Radio frequency power return path
The design of the dielectric board and substrate support provides a simple and effective RF power return path, which solves the arcing problem caused by RF power in the prior art, reduces the risk of damage to chamber components, and improves equipment stability and maintenance efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2020-07-29
- Publication Date
- 2026-08-04
AI Technical Summary
The existing RF power return path design is complex and can easily lead to the generation of electric arcs in the processing chamber, damaging the chamber components.
The design employs dielectric boards and substrate supports, including central and peripheral areas, and utilizes corrugated pipes and conductive loops or grounding plates to provide an effective RF power return path, reducing RF leakage and arcing.
It simplifies the RF return path design, reduces RF leakage and arcing within the chamber, and lowers maintenance costs and time.
Smart Images
Figure CN114502771B_ABST
Abstract
Description
Technical Field
[0001] The embodiments of this disclosure generally relate to an apparatus, and more specifically, to an apparatus for facilitating the deposition of a film of uniform thickness on a substrate.
[0002] Related technical specifications
[0003] Chemical vapor deposition (CVD) and plasma-enhanced CVD (PECVD) are processes used to deposit films on substrates, such as semiconductor substrates. CVD is typically achieved by introducing a process gas into a process chamber that contains the substrate. The process gas is guided through a gas distribution assembly and into a process volume within the process chamber. The gas distribution assembly is positioned in the process volume opposite the substrate located on a pedestal.
[0004] Radio frequency (RF) power can be used to activate the process gas within the processing chamber. RF power tends to return to its source. In some cases, RF power within the processing chamber can generate electric arcs, which can damage the processing chamber and its components. Grounding paths are provided to guide RF power away from components within the processing chamber to prevent damage and to attempt to reduce the occurrence of electric arcs within the processing chamber. However, current grounding path designs are complex and allow for the generation of electric arcs within the processing chamber.
[0005] Therefore, an improved RF return path design is needed. Summary of the Invention
[0006] In one embodiment, an apparatus is provided comprising a chamber body defining a volume therein and a cover. A dielectric plate is disposed between the chamber body and the cover. The dielectric plate extends laterally into the volume. A substrate support is disposed in the volume, opposite the cover. The substrate support includes a support body disposed on a rod. The support body includes a central region and a peripheral region radially outward of the central region. The thickness of the central region is less than the thickness of the peripheral region. The substrate support also includes a flange adjacent to the bottom surface of the peripheral region. The flange extends radially outward from the outer edge of the peripheral region. A bellows is disposed on the flange and configured to be hermetically coupled to the dielectric plate.
[0007] In another embodiment, an apparatus is provided comprising a chamber body and a cover defining a volume therein. A dielectric plate is disposed between the chamber body and the cover. The dielectric plate extends laterally into the volume. A channel is formed through the cover adjacent to the dielectric plate. The channel surrounds at least a portion of the volume. A substrate support is disposed in the volume, opposite the cover. The substrate support includes a support body disposed on a rod. The support body includes a central region and a peripheral region radially outward of the central region. The thickness of the central region is less than the thickness of the peripheral region. A flange is configured to be adjacent to the bottom surface of the peripheral region. The flange extends radially outward from the outer edge of the peripheral region. A bellows is disposed on the flange and configured to hermetically couple the flange to the dielectric plate.
[0008] In yet another embodiment, an apparatus is provided comprising a chamber body and a cover defining a volume therein. A dielectric plate is disposed between the chamber body and the cover. The dielectric plate extends laterally into the volume. A channel is formed through the cover adjacent to the dielectric plate. The channel surrounds at least a portion of the volume. A substrate support is disposed in the volume, opposite the cover. The substrate support includes a support body disposed on a rod. The support body includes a central region and a peripheral region radially outward of the central region. The thickness of the central region is less than the thickness of the peripheral region. A flange is configured to be adjacent to the bottom surface of the peripheral region. The flange extends radially outward from the outer edge of the peripheral region. A bellows is disposed on the flange. The bellows is coupled to the flange and the plate. An opening is formed through the bellows. When the bellows is compressed, the opening is sealed closed. Brief description of the attached diagram
[0010] To gain a more detailed understanding of the features of this disclosure described above, a more detailed description of the disclosure, which has been briefly outlined above, can be obtained by referring to the embodiments, some of which are shown in the accompanying drawings. However, it should be noted that only exemplary embodiments are shown in the accompanying drawings and should therefore not be considered as limiting its scope, as other equivalent embodiments are permissible.
[0011] Figure 1 A schematic cross-sectional view of a processing chamber according to one embodiment is shown.
[0012] Figure 2A A schematic top view of a grounding arrangement according to one embodiment is shown.
[0013] Figure 2B A schematic side view of a grounding arrangement according to one embodiment is shown.
[0014] Figure 3A A schematic cross-sectional view of a bellows according to one embodiment is shown.
[0015] Figure 3B A schematic cross-sectional view of a bellows arrangement according to one embodiment is shown.
[0016] Figure 4 A schematic cross-sectional view of a processing chamber according to one embodiment is shown.
[0017] Figure 5A A schematic cross-sectional view of a processing chamber according to one embodiment is shown.
[0018] Figure 5B A schematic top view of a grounding plate according to one embodiment is shown.
[0019] Figure 5C A schematic top view of a grounding plate according to one embodiment is shown.
[0020] Figure 6 A schematic cross-sectional view of a processing chamber according to one embodiment is shown.
[0021] To facilitate understanding, the same reference numerals are used where possible to denote common elements in the figures. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation
[0022] The embodiments presented herein relate to radio frequency (RF) grounding in a processing chamber. In one embodiment, a dielectric plate is disposed between a chamber body and a cover of the processing chamber. The dielectric plate extends laterally into the volume defined by the chamber body and the cover. A substrate support is disposed in the volume, opposite to the cover. The substrate support includes a support body disposed on a rod. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The thickness of the central region is less than the thickness of the peripheral region. A flange is configured to be adjacent to the bottom surface of the peripheral region. The flange extends radially outward from the outer edge of the peripheral region. A bellows is disposed on the flange and configured to be hermetically coupled to the dielectric plate.
[0023] Figure 1 A schematic cross-sectional view of a processing chamber 100 according to one embodiment is shown. The processing chamber 100 includes a chamber body 102 and a cover 104 disposed on the chamber body 102. The chamber body 102 and the cover 104 define a volume 110 therein. The bottom 148 of the chamber body 102 faces the cover 104.
[0024] The cover 104 includes a panel 106 having a plurality of holes 134 formed therethrough. A gas source 130 is coupled to the cover 104. Gas from the gas source 130 flows into a gas chamber 132 defined at least partially by the cover 104 and the panel 106. The gas chamber 132 is in fluid communication with a volume 110 via the plurality of holes 134. The plurality of holes 134 through the panel 106 allow the gas to be distributed substantially uniformly in the volume 110.
[0025] A substrate support 105 (e.g., a base) is disposed in a volume 110 opposite to the cover 104. The substrate support 105 includes a support body 112 and a rod 108. The rod 108 extends laterally through the bottom 148 of the chamber body 108. The rod 108 is substantially normal to the bottom 148. The support surface 150 of the support body 112 faces the cover 104. The bottom 148 is substantially parallel to the panel 106.
[0026] A support body 112 is disposed on the rod 108. The support body 112 includes a first portion 151 and a second portion 152. The first portion 151 is substantially coaxial with the rod 108 and includes a support surface 150. The first portion 151 is substantially parallel to the panel 106 and the bottom 148. The second portion 152 is coupled to the first portion 151 and extends laterally from the first portion 151 toward the bottom 148. The second portion 152 is cylindrical and substantially perpendicular to the first portion 151, thereby surrounding at least a portion of the rod 108.
[0027] The bottom surface 156 of the first portion 151 faces the bottom 148 of the chamber body 102. The inner surface 158 of the second portion 152 faces the rod 108. The bottom surface 154 of the second portion 152 faces the bottom 148 of the chamber body 102. The bottom surface 154 of the second portion 152 is closer to the bottom 148 of the chamber body 102 than the bottom surface 156 of the first portion 151. In some embodiments, the support body 112 is a monolithic component.
[0028] The outer surface 144 of the support body 112 is its radially outer surface and faces the chamber body 102. The outer surface 144 is opposite to the rod 108 and substantially perpendicular to the bottom 148 of the chamber body 102 and the support surface 150. A ground plane 146 is coupled to the bottom surface 156 of the first portion 151 and the inner surface 158 of the second portion 152. That is, the ground plane 146 is disposed between the support body 112 and the rod 108. The ground plane 146 is made of a conductive material. In another example, the ground plane 146 includes a central opening through which the rod 108 is disposed, thereby allowing contact between the rod 108 and the bottom of the first portion 151.
[0029] A conductive rod 114 is disposed in and extends through the rod 108. The conductive rod 114 is coupled to a ground plane 146. The conductive rod 114 is also coupled to the ground outside the rod 108. The ground plane 146 is substantially parallel to and coplanar with the bottom surface 154 of the second portion 152 of the support body 112.
[0030] The substrate support 105 and the ground plane 146 include a central region 138 and a peripheral region 140. The central region 138 includes at least a portion of a first portion 151. The peripheral region 140 includes at least a portion of a second portion 152. Each of the central region 138 and the peripheral region 140 includes at least a portion of a support body 112 and a ground plane 146. The peripheral region 140 is radially outward of the central region 138.
[0031] A flange 118 is disposed in the peripheral region 140 along the bottom surface 142 of the ground plane 146. The flange 118 is substantially parallel to the support surface 150. The flange 118 extends along the bottom surface 142 of the ground plane 146 and the bottom surface 154 of the second portion 152. The flange 118 extends radially outward from the outer surface 144. The flange 118 may be coupled to the bottom surface 142 of the ground plane 146, the bottom surface 154 of the second portion 152, or both. The flange 118 is made of a conductive material (such as a metal, e.g., aluminum).
[0032] A bellows 120 is disposed on a flange 118, which is located radially outside the support body 112. In one example, the bellows 120 is formed in a circle around the support body 112. The bellows 120 is located on the top surface 160 of the flange 118. The top surface 160 is opposite to the bottom 148 of the chamber body 102 and faces the cover 104. The bellows 120 is adjacent to the outer surface 144 of the support body 112 and extends laterally from the flange 118 toward the cover 104. The bellows 120 is located radially outside the second portion 152 of the support body 112 and is optionally spaced apart from the second portion 152 of the support body 112. The top surface 128 of the bellows 120 is substantially parallel to the support surface 150.
[0033] The bellows 120 includes a return path between a top surface 128 and a flange 118. This return path provides a route for radio frequency (RF) power to travel to ground. That is, the bellows 120 provides a conductive path from the top surface 128 of the bellows 120 to the flange 118. The bellows 120 provides an efficient path to ground for the RF power. Advantageously, the bellows 120 is a simple design that is easily replaceable, which reduces maintenance time and associated costs. To facilitate the flow of RF power, the bellows 120 may be formed of or comprise a conductive material such as a metal. In one example, the bellows 120 includes a sheet of metal, a metal mesh, or a metal conductor embedded in another material. In such an example, the metal may include aluminum.
[0034] A plate 122 is disposed between the cover 104 and the chamber body 102. The plate 122 is annular and surrounds at least a portion of the volume 110. The bottom surface 136 of the plate 122 is substantially parallel to the top surface 128 of the bellows 120. The plate 122 is made of an insulating material to isolate the chamber body 102 and the cover 104. For example, the plate 122 is made of a material containing a dielectric or ceramic.
[0035] Channel 124 is formed through cover 104. Channel 124 is adjacent to plate 122 and surrounds at least a portion of volume 110. Channel 124 is in fluid communication with an exhaust pump (not shown). Channel 124 allows gas and particles to be removed from volume 110 to prevent damage and / or contamination of the film deposited on the substrate.
[0036] An opening 126 is formed through the chamber body 102. The opening 126 allows a substrate (not shown) to be loaded onto a support surface 150 of the substrate support 105 between the plate 122 and the chamber body 102. An actuator 116 is coupled to a rod 108 of the substrate support 105. The actuator 116 is configured to move the substrate support 105 between a lowered position and an raised position within the volume 110. Figure 1 As shown, the substrate support 105 is positioned in the lowered position so that the bellows 120 does not contact the plate 122.
[0037] During operation, the substrate support 105 is moved to a lowered position by the actuator 116. The substrate is loaded onto the support surface 150 through the opening 126. The actuator 116 moves the substrate support 105 to a raised position. In the raised position, the top surface 128 of the bellows 120 contacts the bottom surface 136 of the plate 122. A seal is formed between the top surface 128 of the bellows 120 and the bottom surface 136 of the plate 122. The seal substantially prevents gas from leaving the volume 110 through the opening 126. When the substrate support 105 is in the raised position, the bellows 120 can be compressed between the plate 122 and the flange 118.
[0038] Gas is introduced into volume 110 from gas source 130 through panel 106. Radio frequency (RF) power is used to activate the gas in volume 110. The activated gas is used to deposit material on the substrate. The RF power return path passes through bellows 120 to flange 118, ground plane 146, and conductive rod 114 for grounding. Advantageously, the RF return path significantly reduces RF leakage, parasitic plasma formation, and arcing within volume 110.
[0039] Figure 2A A schematic top view of a grounding arrangement 200 according to one embodiment is shown. The grounding arrangement 200 can be used as a bellows 120 ( Figure 1As an alternative to the bellows 120, the grounding arrangement 200 includes a plurality of conductive loops 202 arranged around the support body 112.
[0040] Multiple conductive loops 202 are disposed radially outside the support body 112. Each of the multiple conductive loops 202 is disposed on the flange 118. When the substrate support 105 moves to the raised position, the multiple conductive loops 202 are compressed against the bottom surface 136 of the plate 122. The multiple conductive loops 202 maintain an RF return path through the flange 118, the ground plane 146, and the conductive rod 114. That is, RF current flows through the multiple conductive loops 202, reaches the flange 118, reaches the ground plane 146, and reaches the conductive rod 114.
[0041] Figure 2B This is a schematic side view of a grounding arrangement 200 according to one embodiment. The ends of conductive loops 202 are coupled to plates 204 via first fasteners 208. Each plate 204 is coupled to a flange 118 via a second fastener 206. That is, the ends of the conductive loops 202 are positioned between and in contact with the plates 204 and flange 118. In one embodiment, the first fastener 208 and the second fastener 206 are made of a conductive material (such as steel or another alloy). A plurality of conductive loops 202 are symmetrically arranged around a support body 112 to provide symmetrical RF return paths within the processing chamber 100. For example, the angular interval between each of the plurality of conductive loops 202 is between about 20 degrees and about 60 degrees, such as about 30 degrees.
[0042] Figure 3A A schematic cross-sectional view of a bellows 120 according to one embodiment is shown. The bellows 120 is attached to a flange 118. The inner side 304 of the bellows 120 is adjacent to the outer surface 144 of the support body 112. The outer side 306 of the bellows 120 is opposite to the inner side 304. The outer side 306 is substantially aligned with the outer edge of the flange 118.
[0043] When the substrate support 105 moves to the raised position, the bellows 120 is compressed in the direction from the top surface 128 of the bellows 120 to the flange 118. That is, when the bellows 120 is compressed, the height 302 of the bellows 120 decreases. When the substrate support 105 moves to the lowered position, the height 302 of the bellows 120 increases and returns to its original height.
[0044] Figure 3B A schematic cross-sectional view of a bellows arrangement 300 according to one embodiment is shown. The bellows arrangement 300 is similar to the above description regarding... Figure 1 and Figure 3AThe bellows 120 is under discussion. However, Figure 3B The bellows arrangement 300 includes a conductive O-ring 312 disposed along the top surface 128 of the bellows 120.
[0045] A channel 310 is formed in the top surface 128 of the bellows 120. A conductive O-ring 312 is disposed in the channel 310. At least a portion of the conductive O-ring 312 extends into the channel 310. At least a portion of the conductive O-ring 312 extends above the top surface 128 of the bellows 120.
[0046] A conductive O-ring 312 provides a conductive point on the bellows 120 through which the RF current travels in the RF return path. That is, as described above, the conductive O-ring 312 allows increased RF current to flow into and through the RF return path (e.g., bellows 120 and / or 300). Therefore, the conductive O-ring 312 further improves RF grounding and further reduces the occurrence of parasitic plasma and arcing in the processing chamber 100. In one example, the conductive O-ring 312 completely surrounds the support body 112.
[0047] Figure 4 A schematic cross-sectional view of a processing chamber 400 according to one embodiment is shown. The processing chamber 400 is similar in many respects to the one described above. Figure 1 The processing chamber 100 is discussed. However, the bellows 402 in the processing chamber 400 is different from the bellows 120 in the processing chamber 100.
[0048] A bellows 402 is disposed on a flange 118 adjacent to the support body 112. However, the bellows 402 is attached to the bottom surface 136 of the plate 122. That is, the bellows 402 is adhered to both the flange 118 and the bottom surface 136 of the plate 122. The bellows 402 may be adhered to the bottom surface 136 via one or more fasteners, adhesives, or other suitable means.
[0049] A slit 404 is formed through a bellows 402. The slit 404 extends at an angle such that a substrate (not shown) can be loaded onto the support surface 150 through the slit 404. When the substrate support 105 moves to the raised position, the bellows 402 is compressed between the plate 122 and the flange 118. The slit 404 is also compressed into the bellows 402. Therefore, when the substrate support 105 is in the raised position, the slit 404 is sealed.
[0050] Figure 5A A schematic cross-sectional view of a processing chamber 500 according to one embodiment is shown. The processing chamber 500 is similar in many respects to the one described above. Figure 1The processing chamber 100 is discussed. However, the processing chamber 500 includes a grounding plate 502 disposed in the volume 110. The grounding plate 502 includes a first end 504 and a second end 506 radially outward of the first end 504.
[0051] A grounding plate 502 is disposed around the rod 108. The grounding plate 502 contacts a ground plane 146 adjacent to the rod 108. In some embodiments that may be combined with one or more of the above embodiments, the grounding plate 502 is physically and electrically coupled to the ground plane 146. That is, a first end 504 of the grounding plate 502 is adhered to the ground plane 146. A second end 506 of the grounding plate 502 is physically and electrically coupled to the chamber body 102. In some embodiments that may be combined with one or more of the above embodiments, the second end 506 of the grounding plate 502 is coupled to the bottom 148 of the chamber body 102. The second end 506 of the grounding plate 502 is coupled to ground to provide a grounding path for the RF power in the volume 110. When the substrate support 105 is in a lowered position, the grounding plate 502 forms a concentric loop, such as a coil.
[0052] When the substrate support 105 moves to the raised position, the first end 504 of the grounding plate 502 remains in contact with the grounding plate 146 and moves together with the substrate support 105. However, the second end 506 of the grounding plate 502 is fixed and remains in contact with the chamber body 102. That is, when the substrate support 105 is in the raised position, the grounding plate 502 forms a cone shape around the rod 108. The grounding plate 502 provides a continuous grounding path for the RF power in the volume 110. Therefore, the grounding plate 502 can significantly reduce the occurrence of parasitic plasma and arcing in the processing chamber 500. In one embodiment that can be combined with one or more embodiments discussed above, the conductive rod 114 is not included because the grounding plate 502 provides a sufficient return path for the RF power.
[0053] Figure 5B A schematic top view of a grounding plate 502 according to one embodiment is shown. The grounding plate 502 surrounds a rod 108 ( Figure 1 , Figure 4 and Figure 5A It is arranged in a spiral shape. When the substrate support 105 moves to the raised position, the grounding plate 502 forms a spiral shape between the substrate support 105 and the bottom 148 of the chamber body 102.
[0054] Figure 5CA schematic diagram of a grounding plate 503 according to one embodiment is shown. Grounding plate 503 can be used in any part of this disclosure, wherein grounding plate 502 is described as being used. Grounding plate 503 includes a plurality of grounding paths 510, 512, 514, 516, such as a first path 510, a second path 512, a third path 514, and a fourth path 516. The plurality of grounding paths are wound together around a center point 534. Center point 534 is also the center point of rod 108. Figure 1 , Figure 4 and Figure 5A ).
[0055] The first ends 520, 524, 528, and 532 of each of the first, second, third, and fourth paths 510, 512, 514, and 516 are adjacent to the center point 534, respectively. The first, second, third, and fourth paths 510, 512, 514, and 516 each spiral away from the center point 534 to the second ends 518, 522, 526, and 530, respectively. The first ends 520, 524, 528, and 532 are coupled to a ground plane on the substrate support, such as ground plane 146. Figure 1 , Figure 4 and Figure 5A The second ends 518, 522, 526, and 530 are coupled to the chamber body 102. In one example, each of the first ends 520, 524, 528, and 532 is spaced equidistantly from each other. Alternatively or additionally, each of the second ends 518, 522, 526, and 530 is spaced equidistantly from each other.
[0056] Grounding paths 510, 512, 514, and 516 are shorter than grounding plate 502. Therefore, grounding paths 510, 512, 514, and 516 provide improved return paths for the RF power in volume 110. Grounding paths 510, 512, 514, and 516 also further reduce the occurrence of parasitic plasma and arcing in volume 110 because multiple return paths are provided for the RF power.
[0057] Figure 6 A schematic cross-sectional view of a processing chamber 600 according to one embodiment is shown. The processing chamber 600 is similar in many respects to the one described above. Figure 1 The processing chamber 100 is discussed. However, the processing chamber 600 includes one or more grounding blocks 602 and one or more grounding strips 604.
[0058] One or more grounding blocks 602 are disposed on the inner surface of the chamber body 102 facing the volume 110. When the substrate support 105 is in the raised position, the one or more grounding blocks 602 are disposed below the support body 112. One or more grounding strips 604 are coupled to the grounding blocks 602. The one or more grounding strips 604 are also coupled to the grounding plate 146 of the substrate support 105. The chamber body 102 is coupled to the ground.
[0059] One or more grounding strips 604 are made of a flexible and conductive material, such as aluminum strip. The grounding strips 604 are flexible to maintain constant contact with the ground plane 146 as the substrate support 105 moves within the volume 110. The grounding strips 604 are conductive to provide a return path for the RF power within the volume. The grounding path is similar to... Figure 1 The grounding path of the processing chamber 100 includes, in addition to, a grounding path from the ground plane 146 through one or more grounding strips 604 to the grounding block 602 and the grounded chamber body 102. According to one embodiment, the conductive rod 114 in the rod 108 is not included in the grounding path and / or RF power path. Advantageously, the one or more grounding blocks 602 and one or more grounding strips 604 provide an efficient grounding path for RF power and can reduce downtime and save costs during maintenance of the processing chamber 600.
[0060] Although various aspects of the substrate support with first and second portions having different vertical thicknesses have been described herein, it is conceivable that substrate supports with other dimensions (including uniform thickness) may benefit from various aspects of this disclosure.
[0061] Although the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.
Claims
1. An apparatus comprising: A chamber body and a cover, wherein the chamber body and the cover define a volume therein; A dielectric plate, made of insulating material, is used to isolate the chamber body from the cover, and the dielectric plate extends laterally into the volume; A substrate support member is disposed in the volume and opposite to the cover, the substrate support member comprising: A support body is mounted on a pole. The support body includes a central region and a peripheral region radially outside the central region. The thickness of the central region is less than the thickness of the peripheral region. A grounding plate is disposed between the support body and the rod; and A flange is adjacent to and coupled to the ground plane of the peripheral region, and the flange extends radially outward from the outer edge of the peripheral region. A conductive rod extending through the rod, wherein the conductive rod is coupled to a ground plane disposed between the support body and the rod; and A grounding arrangement is provided around the support body and coupled to the ground plane, wherein as the substrate support moves into the raised position, the grounding arrangement moves into the raised position to physically contact the dielectric plate.
2. The apparatus of claim 1, further comprising: One or more grounding blocks, located in the volume and disposed on the chamber body; and One or more grounding strips are coupled to the one or more grounding blocks and the grounding plate.
3. The apparatus of claim 1, further comprising a grounding arrangement including a plurality of conductive loops disposed around the support body.
4. An apparatus comprising: A chamber body and a cover, wherein the chamber body and the cover define a volume therein; A dielectric plate, made of insulating material, is used to isolate the chamber body from the cover, and the dielectric plate extends laterally into the volume; A channel is formed through the cover and adjacent to the dielectric plate, the channel surrounding at least a portion of the volume; A substrate support member is disposed in the volume and opposite to the cover, the substrate support member comprising: A support body is mounted on a pole. The support body includes a central region and a peripheral region radially outside the central region. The thickness of the central region is less than the thickness of the peripheral region. A grounding plate is disposed between the support body and the rod; and A flange is configured to be adjacent to and coupled to the ground plane of the peripheral region, the flange extending radially outward from the outer edge of the peripheral region; A conductive rod extending through the rod, wherein the conductive rod is coupled to a ground plane disposed between the support body and the rod; and Multiple conductive loops are disposed on the flange and configured to be compressed against the bottom surface of the dielectric plate when the substrate support moves into the raised position.
5. The apparatus of claim 4, further comprising: One or more grounding blocks are located in the volume and disposed on the chamber body; as well as One or more grounding strips are coupled to the one or more grounding blocks and the grounding plate.
6. The apparatus of claim 4, further comprising a grounding plate having a first end and a second end, the first end being coupled to the grounding plate and adjacent to the rod, and the second end being coupled to the chamber body.
7. The apparatus of claim 4, further comprising a plurality of grounding plates, each grounding plate having a first end and a second end, wherein: Each of the first ends is coupled to the ground plane, adjacent to the rod, and Each of the second ends is coupled to the chamber body.
8. An apparatus comprising: A chamber body and a cover, wherein the chamber body and the cover define a volume therein; A dielectric plate, made of insulating material, is used to isolate the chamber body from the cover, and the dielectric plate extends laterally into the volume; A channel is formed through the cover and adjacent to the dielectric plate, the channel surrounding at least a portion of the volume; The channel is configured to remove gas from the volume; A substrate support member is disposed in the volume and opposite to the cover, the substrate support member comprising: A support body, mounted on a pole, includes a central region and a peripheral region radially outward from the central region, the thickness of the central region being less than the thickness of the peripheral region; and A flange is configured to be adjacent to the bottom surface of the peripheral region, and the flange extends radially outward from the outer edge of the peripheral region; as well as A conductive rod extending through the rod, wherein the conductive rod is coupled to a grounding plate disposed between the support body and the rod; Multiple conductive loops are disposed on the flange and configured to be compressed against the bottom surface of the dielectric plate when the substrate support moves into the raised position, wherein the multiple conductive loops are adjacent to the outer surface of the peripheral region.
9. The apparatus of claim 8, wherein the ground plane is coupled to the flange.
10. The apparatus of claim 9, further comprising a grounding plate having a first end and a second end, the first end being coupled to the grounding plate and adjacent to the rod, and the second end being coupled to the chamber body.
11. The apparatus of claim 9, further comprising a plurality of grounding plates, each grounding plate having a first end and a second end, wherein: Each of the first ends is coupled to the ground plane, adjacent to the rod, and Each of the second ends is coupled to the chamber body.