用于电子迁移评估的方法及设备

By grouping integrated circuit design layouts and calculating self-heating temperatures, the problem of inaccurate EM analysis in FinFET semiconductor devices is solved, improving the accuracy of EM evaluation and device reliability, and reducing the risk of failure.

CN114512417BActive Publication Date: 2026-07-17TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2022-01-04
Publication Date
2026-07-17

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Abstract

本公开涉及用于电子迁移评估的方法及设备。本公开提供一种用于测试半导体装置的方法及设备。所述方法包含：在集成电路设计布局中提供作用区；将所述作用区分组成第一区及第二区；计算所述作用区的所述第一区的第一自热温度；计算所述作用区的所述第二区的第二自热温度；及基于所述第一自热温度及所述第二自热温度来确定电子迁移EM评估。
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