A high-precision wafer stage ceramic carrier

Abstract

A high-precision wafer carrier ceramic carrier, wherein a porous ceramic layer is arranged on the upper end of the carrier; at least one annular carrier vacuum channel is arranged on the lower surface of the carrier, and a carrier vacuum air cavity is also arranged on the lower surface of the carrier in the central area of ​​the carrier vacuum channel. Compared with the prior art, the porous ceramic used on the upper surface of the carrier has high precision and good adsorption. The vacuum channel makes the base and the carrier tightly connected. The base and the carrier are fixed by vacuum adsorption, and processing wafers of other sizes only requires replacing the corresponding carrier, and the replacement of the carrier is convenient. The carrier vacuum channel of the carrier of the present invention is provided with evenly distributed main gas paths and branch gas paths; each main gas path is connected to its own vacuum pipeline. In addition, in the present invention, the depth of the main gas path is greater than the depth of the branch gas path, and in the same time, the negative pressure generated in the main gas path and the branch gas path is roughly equal or the difference becomes smaller. During the adsorption process, the position of the carrier is stable and the precision is high.

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