Wafer processing apparatus and method

Abstract

The present application relates to a kind of wafer processing device and method, belong to the technical field of semiconductor manufacturing, solve the problem that the existing technology is not carried out cleaning after all wafer process is carried out, resulting in the smoke generated in the process of semiconductor manufacturing cannot be completely removed, wafer yield loss.The wafer processing device includes process chamber, transfer chamber and cleaning system.Cleaning system is arranged in wafer processing device, so that the wafer after process chamber can directly enter cleaning system for cleaning.Transfer chamber is equipped with transfer manipulator, and transfer manipulator completes the transmission of wafer between process chamber and transfer chamber and between transfer chamber and cleaning system.Wafer processing method includes after each process that can produce smoke, wafer is sent into cleaning system for cleaning and drying treatment.The present application realizes the effective removal of smoke, improves the yield loss caused by smoke.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a wafer processing apparatus and method. Background Technology

[0002] In semiconductor manufacturing, fumes generated during etching, deposition, and implantation processes can contaminate the wafer. Over time, these fumes solidify on the wafer, becoming defect sources and leading to a decrease in product yield.

[0003] To remove such flue gas, various improvements have been made in existing technologies. Representative treatment methods include the installation of N2 stockers, ammonia filters, buffer stations, and side storage.

[0004] However, existing cleaning equipment and process chambers are usually set up independently, which means that cleaning can only be performed after all wafer processes have been completed. As a result, the fumes left on the wafer solidify over time, making it impossible to completely remove the fumes and affecting the product yield. Summary of the Invention

[0005] Based on the above analysis, the present invention aims to provide a wafer processing apparatus and method to solve the problem that the prior art performs cleaning only after all wafer processes are completed, which results in the inability to completely remove the fumes generated during semiconductor manufacturing and the loss of wafer yield.

[0006] The objective of this invention is mainly achieved through the following technical solutions:

[0007] On one hand, the present invention provides a wafer processing apparatus, which includes a process chamber, a transfer chamber, and a cleaning system; the process chamber includes an etching chamber, a deposition chamber, or an injection chamber; the cleaning system is disposed within the wafer processing apparatus so that wafers processed by the etching chamber, the deposition chamber, or the injection chamber can directly enter the cleaning system for cleaning; the transfer chamber is provided with a transfer robot, which completes the transfer of wafers between the process chamber and the transfer chamber, and between the transfer chamber and the cleaning system.

[0008] Based on the above solution, the present invention also makes the following improvements:

[0009] Based on a further improvement to the wafer processing apparatus described above, the cleaning system is located on the side of the wafer processing apparatus.

[0010] Based on further improvements to the aforementioned wafer processing apparatus, the cleaning system has a drying function, which can dry the cleaned wafer.

[0011] Based on a further improvement of the above-mentioned wafer processing apparatus, the cleaning system includes a housing, a base located in the housing, a rotatable support for placing the wafer, and at least one first liquid distribution pipe for providing cleaning fluid, the first liquid distribution pipe being used to spray cleaning fluid onto the wafer surface, and the support being located on the base.

[0012] Based on a further improvement of the wafer processing apparatus described above, the first liquid distribution tube includes a first tubular portion with a bend and a first nozzle for spraying out cleaning fluid.

[0013] Based on a further improvement to the wafer processing apparatus described above, the first liquid distribution tube is used to transport deionized water.

[0014] Based on a further improvement to the wafer processing apparatus described above, the first nozzle is located outside the edge of the wafer.

[0015] Based on further improvements to the wafer processing apparatus described above, the cleaning system further includes a second liquid distribution pipe for cleaning the periphery or bevel of the wafer.

[0016] Based on a further improvement of the wafer processing apparatus described above, the second liquid distribution tube includes a curved second tubular portion and a second nozzle.

[0017] On the other hand, the present invention also provides a wafer processing method, including a transfer robot in a transfer chamber picking up a wafer and placing it in a process chamber. After the wafer has been processed, the transfer robot picks up the wafer again and places it in a cleaning system for cleaning and drying. After each process that generates fumes, the wafer is sent to the cleaning system for cleaning and drying.

[0018] Further improvements to the above wafer processing method include: a transfer robot in the transfer chamber places the wafer into the process chamber; after the process is completed, the transfer robot places the wafer on the support of the cleaning system, adjusts the rotation speed of the support, and cleans the wafer with cleaning fluid sprayed from the liquid distribution pipe; after cleaning, the wafer is dried; and the transfer robot removes the wafer.

[0019] Based on a further improvement to the above wafer processing method, the drying process is spin drying.

[0020] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0021] (1) By setting the cleaning system inside the wafer processing device, the present invention can clean immediately after the process that generates fumes (such as etching, deposition and implantation), instead of cleaning after all wafer processes are completed. This effectively prevents the fumes from solidifying on the wafer, maximizes the removal of fumes, and can effectively remove the fumes generated in the process, thereby improving the yield loss caused by fumes.

[0022] (2) By placing the first nozzle outside the edge of the wafer, the present invention can effectively prevent residues inside the curved tubular portion or on the lower surface of the curved tubular portion from dripping onto the active surface of the wafer.

[0023] (3) By setting a second liquid distribution pipe, the periphery or bevel of the wafer can be cleaned, thereby further removing the flue gas and improving the product yield.

[0024] (4) By placing the deionized water cleaning system in a specific location, such as the side of the wafer processing device, the present invention effectively prevents the equipment from becoming larger. Specifically, compared with placing the deionized water cleaning system in other locations, placing it on the side can reduce the volume by at least 1 / 3.

[0025] (5) The present invention does not require the setting of N2 storage device, and the volume of storage device can be reduced by at least 1 / 3, thus expanding the manufacturing space.

[0026] (6) The cleaning system of the present invention is set inside the wafer processing device. The wafer cleaning process can be carried out during the plasma cleaning process (cleaning chamber time varies from 4 to 20 minutes) and the vacuuming time (3 to 5 minutes) in the process. Therefore, the wafer cycle time can be reduced, the delay time or standby time can be easily managed, productivity can be increased, and production efficiency can be improved.

[0027] In this invention, the above-described technical solutions can be combined with each other to achieve more preferred combinations. Other features and advantages of this invention will be set forth in the following description, and some advantages will become apparent from the description or may be learned by practicing the invention. Attached Figure Description

[0028] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0029] Figure 1 This is a top view of the wafer processing apparatus according to an embodiment of the present invention;

[0030] Figure 2 This is a schematic diagram of the cleaning system according to an embodiment of the present invention;

[0031] Figure 3This is a schematic diagram showing the nozzle located outside the edge of the wafer in an embodiment of the present invention.

[0032] Figure label:

[0033] 1-Process chamber; 2-Transfer chamber; 3-Cleaning system; 4-Housing shell; 5-Base; 6-Support; 7-First liquid distribution pipe; 8-First tubular section; 9-First nozzle; 10-Wafer; 11-Vertical line; 12-Second liquid distribution pipe; 13-Second tubular section; 14-Second nozzle; 15-Baffle; 16-Pre-vacuum chamber; 17-Atmosphere transfer chamber; 18-Wafer holder. Detailed Implementation

[0034] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0035] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0036] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0037] Example 1

[0038] A specific embodiment of the present invention discloses a wafer processing apparatus, such as... Figure 1 As shown. The wafer processing apparatus includes a process chamber 1, a transfer chamber 2, a cleaning system 3, a pre-vacuum chamber 16, an atmospheric transfer chamber 17, and a wafer carrier 18. The process chamber may include an etching chamber, a deposition chamber, or an implantation chamber. The transfer chamber 2 is equipped with a transfer robot, which completes the transfer of wafers between the process chamber 1 and the transfer chamber 2, and between the transfer chamber 2 and the cleaning system 3.

[0039] In one possible implementation, the cleaning system 3 is located within the wafer processing apparatus so that wafers processed by the etching chamber, deposition chamber, or implantation chamber can directly enter the cleaning system 3 for cleaning.

[0040] To prevent the cleaning system 3 from increasing the size of the device after it is placed inside the wafer processing apparatus, in another possible embodiment, the cleaning system 3 is located on the side of the wafer processing apparatus.

[0041] In addition to cleaning wafers, the cleaning system 3 of this application also has a drying function, which can dry the cleaned wafers. For example, the cleaning solution can be spun out by centrifugal force.

[0042] The following will refer to Figure 2 The structure of the cleaning system is described in detail.

[0043] The cleaning system 3 includes a housing 4, a base 5 located within the housing, a rotatable support 6 for placing the wafer, and at least one first liquid distribution pipe 7 for supplying cleaning fluid. The first liquid distribution pipe 7 is capable of spraying cleaning fluid onto the wafer surface, and the support 6 is located on the base 5.

[0044] In one possible implementation, the first liquid distribution tube 7 includes a curved first tubular portion 8 and a first nozzle 9 for dispensing cleaning fluid. The first tubular portion 8 hangs above the wafer 10, which rotates below the first nozzle 9. The first nozzle 9 is directed towards the active surface of the wafer 10.

[0045] The first liquid distribution pipe 7 is typically used to transport deionized water and is also known as a "water pipe".

[0046] In other embodiments, the cleaning system 3 may include a plurality of first liquid distribution pipes 7, which are arranged side by side and suspended above the wafer 10.

[0047] Considering that residues (such as cleaning fluid) inside or on the lower surface of the curved tubular portion may drip onto the active surface of the wafer, in another possible embodiment, the curved first tubular portion 8 of the first liquid distribution tube 7 is shortened such that the first nozzle 9 is located outside the edge of the wafer 10, as shown below. Figure 3 As shown. For example, the first nozzle 9 could be located 2cm above the wafer and 1cm away from the wafer edge.

[0048] With the above structural improvements, the cleaning fluid inside the curved tubular portion or on the lower surface of the curved tubular portion will not drip onto the active surface of the wafer, but will drip into the housing 4 and can be recovered through the discharge system (not shown in the figure).

[0049] Additionally, the angle α between the liquid ejected from the first nozzle 9 and the vertical line 11 can be controlled to ensure that the cleaning fluid is precisely distributed to specific locations on the wafer. For example, α can be 40°-80°.

[0050] Based on further improvements to the above-mentioned cleaning system, the cleaning system 3 also includes a second liquid distribution pipe 12. This second liquid distribution pipe 12 is rotatable and is used to clean the periphery or bevel of the wafer, thereby further removing fumes and improving product yield.

[0051] In one possible implementation, refer to Figure 2 The second liquid distribution tube 12 includes a curved second tubular portion 13 and a second nozzle 14. Similar to the first nozzle 9, the second nozzle 14 is also located outside the edge of the wafer 10, thereby effectively preventing cleaning fluid inside the curved tubular portion or on the lower surface of the curved tubular portion from dripping onto the active surface of the wafer.

[0052] The cleaning solution delivered by the second liquid distribution pipe 12 may be the same as or different from that delivered by the first liquid distribution pipe. In another possible embodiment, the cleaning solution delivered by the second liquid distribution pipe is a mixed strong acid solution of hydrogen peroxide and sulfuric acid (H2O2 / H2SO4) to remove fumes generated during etching, deposition, or implantation processes from the periphery or bevel of the semiconductor wafer 10.

[0053] Considering that the cleaning fluid sprayed from the nozzle may cause splashing when it falls onto the wafer surface, in a preferred embodiment, the cleaning system 3 further includes an annular baffle 15. The annular baffle 15 is designed to be height-adjustable, so that the baffle can be raised from a lower position to a higher position as needed, effectively preventing the cleaning fluid from splashing.

[0054] Example 2

[0055] Another embodiment of the present invention discloses a wafer processing method, including a transfer robot in a transfer chamber picking up a wafer and placing it in a process chamber. After the wafer has been processed, the transfer robot picks up the wafer again and places it in a cleaning system for cleaning and drying.

[0056] Because wafer manufacturing typically involves multiple processes, including etching, deposition, and implantation, which can generate fumes, the wafer processing method of this invention immediately sends the wafer into a cleaning system for cleaning and drying after each process that generates fumes, without any delay. This prevents the fumes from solidifying on the wafer surface, resulting in more thorough removal of the fumes and effectively preventing yield loss.

[0057] The wafer processing method of the present invention will be described in detail below using the etching process as an example.

[0058] First, the transfer robot in the transfer chamber places the first wafer into the pre-vacuum chamber 16 and evacuates it. After evacuation, the robot picks up the wafer from the pre-vacuum chamber 16 and places it into the etching chamber. After the first wafer has been etched, it is transferred by the robot to the support of the wafer cleaning system of the present invention, where the cleaning system performs vacuum adsorption and fixation for the first cleaning process.

[0059] Next, the etching chamber undergoes a plasma cleaning process. SF6, O2, or Ar can be introduced, depending on the specific process requirements. The reaction gas is ignited at a plasma power of 200–500W (to remove any wafer residue from the previous process) and the cleaning process lasts 4–20 minutes.

[0060] During the plasma cleaning process of the etching cavity, the cleaning system of the present invention is used to perform the first cleaning process on the wafer.

[0061] At this point, the first nozzle 9 sprays cleaning liquid from above or to the side of the wafer to clean the first wafer. After 1-2 minutes, the second cleaning process begins. The second nozzle 14 (located 2 cm above the wafer and 1 cm away from the wafer edge) sprays deionized water onto the first wafer for 2-3 minutes. If the etching chamber has completed plasma cleaning, a vacuum operation can be performed for 3-5 minutes. Then, the wafer is transferred to the second wafer for etching and other operations. At this point, the second cleaning process for the first wafer in this invention is complete.

[0062] Then, the robotic arm in the transfer chamber 2 places the first wafer into the pre-vacuum chamber 16, and then the robotic arm places the first wafer in the pre-vacuum chamber 16 into the atmospheric transfer chamber 17, after which the first wafer is placed on the wafer holder 18.

[0063] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0064] (1) By setting the cleaning system inside the wafer processing device, the present invention can clean immediately after the process that generates fumes (such as etching, deposition and implantation), instead of cleaning after all wafer processes are completed. This effectively prevents the fumes from solidifying on the wafer, maximizes the removal of fumes, and can effectively remove the fumes generated in the process, thereby improving the yield loss caused by fumes.

[0065] (2) By placing the first nozzle outside the edge of the wafer, the present invention can effectively prevent residues inside the curved tubular portion or on the lower surface of the curved tubular portion from dripping onto the active surface of the wafer.

[0066] (3) By setting a second liquid distribution pipe, the periphery or bevel of the wafer can be cleaned, thereby further removing the flue gas and improving the product yield.

[0067] (4) By placing the deionized water cleaning system in a specific location, such as the side of the wafer processing device, the present invention effectively prevents the equipment from becoming larger. Specifically, compared with placing the deionized water cleaning system in other locations, placing it on the side can reduce the volume by at least 1 / 3.

[0068] (5) The present invention does not require the setting of N2 storage device, and the volume of storage device can be reduced by at least 1 / 3, thus expanding the manufacturing space.

[0069] (6) The cleaning system of the present invention is set inside the wafer processing device. The wafer cleaning process can be carried out during the plasma cleaning process (cleaning chamber time varies from 4 to 20 minutes) and the vacuuming time (3 to 5 minutes) in the process. Therefore, the wafer cycle time can be reduced, the delay time or standby time can be easily managed, productivity can be increased, and production efficiency can be improved.

[0070] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0071] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A wafer processing method, characterized in that, include The transfer robot in the transfer chamber places the first wafer in the pre-vacuum chamber for vacuuming; after vacuuming, the robot picks up the wafer in the pre-vacuum chamber and places it in the etching chamber; after the first wafer is etched, it is transferred by the robot to the support of the cleaning system, where the cleaning system performs vacuum adsorption and fixation for the first cleaning process. The etching chamber is subjected to a plasma cleaning process by introducing SF6, O2 or Ar; the reaction gas is ignited at a plasma power of 200~500W, and there are no wafers in the chamber to remove the residue from the previous process. The cleaning takes 4~20 minutes. During the plasma cleaning process of the etching cavity, a cleaning system is used to perform the first cleaning process on the wafer; At this point, the first nozzle sprays cleaning liquid from above or to the side of the wafer to clean the first wafer. After 1-2 minutes, the second cleaning process begins. The second nozzle then sprays deionized water onto the first wafer for 2-3 minutes. If the etching chamber has completed plasma cleaning, a vacuum operation can be performed for 3-5 minutes. Then, the wafer is transferred to the second wafer for etching. At this point, the second cleaning process for the first wafer is complete. Next, the robotic arm in the transfer chamber places the first wafer in the pre-vacuum chamber, and then the robotic arm places the first wafer in the pre-vacuum chamber into the atmospheric transfer chamber, after which the first wafer is placed on the wafer rack. The wafer processing apparatus includes a process chamber, a transfer chamber, and a cleaning system; The process chamber includes an etching chamber, a deposition chamber, and / or an implantation chamber. The cleaning system is located within the wafer processing apparatus so that wafers processed by the etching chamber, the deposition chamber, or the implantation chamber can directly enter the cleaning system for cleaning. The transfer chamber is equipped with a transfer robot, which completes the transfer of wafers between the process chamber and the transfer chamber, as well as between the transfer chamber and the cleaning system. The cleaning system includes a housing, a base located within the housing, a rotatable support for placing a wafer, and at least one first liquid distribution pipe for providing cleaning fluid, the first liquid distribution pipe being used to spray cleaning fluid onto the wafer surface, the support being located on the base; The first liquid distribution tube includes a curved first tubular portion and a first nozzle for spraying cleaning fluid; the angle between the liquid sprayed from the first nozzle and the vertical line is 40º-80º. The cleaning system further includes a second liquid distribution tube for cleaning the periphery or bevel of the wafer; the second liquid distribution tube includes a curved second tubular portion and a second nozzle; the second nozzle is located outside the edge of the wafer.

2. The method according to claim 1, characterized in that, The cleaning system is located on the side of the wafer processing apparatus.

3. The method according to claim 1, characterized in that, The cleaning system has a drying function, which can dry the cleaned wafers.

4. The method according to any one of claims 1-3, characterized in that, The first liquid distribution pipe is used to deliver deionized water.

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