Gas supply structure and plasma deposition apparatus provided with the same

Abstract

This invention discloses a gas supply structure and a plasma deposition apparatus having the same. The gas supply structure includes: a main body having branch flow spaces extending in different directions internally, and including a single central hole disposed at the center of the back surface of the main body and a plurality of peripheral holes disposed at the periphery of the back surface and communicating with the branch flow spaces; a first supply port attached to the upper surface of the main body extending perpendicularly relative to the upper surface of the main body, and having a first flow space communicating with the branch flow spaces; and a second supply port disposed inside the first supply port connected to the central hole, and having a second flow space communicating with the first flow space and separate from the branch flow spaces. This invention supplies process gas only through the central hole and cleaning gas through both the central hole and the peripheral holes, thereby simultaneously improving the uniformity of the deposited film thickness and the cleaning uniformity within the process chamber.

Description

Technical Field

[0001] The present invention relates to a gas supply structure and a plasma deposition apparatus having the same, and more specifically, to a gas supply structure for supplying process gas for plasma deposition and cleaning gas for chamber cleaning, and a plasma deposition apparatus having the same. Background Technology

[0002] Plasma deposition apparatuses are widely used as a unit process in the manufacture of flat panel display devices. A typical plasma deposition apparatus supplies process gas into a plasma state after supplying process gas to the deposition chamber and uses this plasma to form a single film on the substrate surface.

[0003] At this point, in order to prevent the deposited single membrane from being contaminated by impurities, a cleaning process is performed inside the chamber after the deposition process is completed. In order to improve the uniformity of membrane thickness, various improvements are made to the process conditions and the flow characteristics of the process gas. Summary of the Invention

[0004] One object of the present invention is to provide a gas supply structure for a plasma device, which can simultaneously improve the cleaning uniformity and the thickness uniformity of the deposited film by supplying process gas only to the center of the substrate and cleaning gas only to the center and the periphery of the substrate.

[0005] Another object of the present invention is to provide a plasma deposition apparatus having the gas supply structure described above.

[0006] A gas supply structure for a plasma device according to an embodiment of the present invention for achieving the above-mentioned objectives includes: a main body having branch flow spaces extending in different directions therein, and including a single central hole disposed at the center of the back surface of the main body and a plurality of peripheral holes disposed at the periphery of the back surface and communicating with the branch flow spaces respectively; a first supply port being attached to the upper surface of the main body in a vertical direction perpendicular to the upper surface of the main body and having a first flow space communicating with the branch flow spaces; and a second supply port being disposed inside the first supply port in a manner connected to the central hole and having a second flow space communicating with the first flow space and separate from the branch flow spaces.

[0007] Another embodiment of the plasma deposition apparatus of the present invention for achieving the above-mentioned objectives includes: a process chamber for performing a plasma deposition process; a substrate fixing structure disposed at the lower part of the process chamber and fixing a substrate to be deposited; and a gas supply structure disposed at the upper part of the process chamber opposite to the substrate fixing structure, and supplying a deposition process gas and a cleaning gas for cleaning the interior of the process chamber to the process chamber.

[0008] At this time, the gas supply structure comprises: a main body having branch flow spaces extending in different directions inside, and including a single central hole disposed at the center of the back side of the main body and a plurality of peripheral holes disposed at the periphery of the back side and communicating with the branch flow spaces respectively; a first supply port being attached to the upper surface of the main body in a vertical direction perpendicular to the upper surface of the main body, and having a first flow space communicating with the branch flow spaces; and a second supply port being disposed inside the first supply port in a manner connected to the central hole, and having a second flow space communicating with the first flow space and separate from the branch flow spaces.

[0009] According to an embodiment of the present invention, a gas supply structure for a plasma device and a plasma deposition apparatus having the same are provided, with a first supply port on the upper part of a main body having a branch flow space, a plurality of peripheral holes communicating with the branch flow space, and a single central hole, and a second supply port being provided inside the first supply port in a manner communicating with the first supply port. A first flow space, which is the internal space of the first supply port, is connected to the plurality of peripheral holes through the branch flow space, and the second supply port is connected to the central hole. A second flow space, which is the internal space of the second supply port, is separated from the branch flow space and is connected to the central hole.

[0010] At this point, the cleaning gas is supplied to the first supply port from a position higher than the second supply port, and is uniformly supplied through the branch flow space and the second flow space via the peripheral holes and the central hole, thereby improving the concentration uniformity of the cleaning gas. In contrast, the flow of the process gas supplied to the second supply port into the branch flow space is blocked, and it flows only through the second flow space and is supplied only through the central hole, thereby removing local high concentration points of the process gas.

[0011] Therefore, a plasma deposition apparatus equipped with a gas supply structure can simultaneously improve the thickness uniformity of the deposited film formed on the substrate and the cleaning uniformity of the internal structure of the process chamber.

[0012] However, the effects of the present invention are not limited to those described above, and can be extended in various ways without departing from the spirit and scope of the present invention. Attached Figure Description

[0013] Figure 1 This is a structural diagram illustrating a gas supply structure for a plasma device according to an embodiment of the present invention.

[0014] Figure 2a It means Figure 1 A top view of the main body of the gas supply structure shown.

[0015] Figure 2b It means Figure 2a The rear view of the main body shown.

[0016] Figure 3a It means Figure 1 A top view of the combined structure of the first and second supply ports shown.

[0017] Figure 3b It means Figure 3a The rear view of the combined structure of the first and second supply ports shown.

[0018] Figure 4a It means through Figure 1 The diagram shows the process of supplying the first gas G1 through the first supply port.

[0019] Figure 4b It means through Figure 1 The diagram shows the process of supplying the second gas through the second supply port.

[0020] Figure 5 This is a structural diagram showing a gas supply structure according to another embodiment of the present invention.

[0021] Figure 6 This is a structural diagram showing a gas supply structure according to another embodiment of the present invention.

[0022] Figure 7 It means Figure 6 The diagram shows a three-dimensional view of the flow controller.

[0023] Figure 8a It means Figure 7 The diagram shows a cross-sectional view of the flow controller.

[0024] Figure 8b It means Figure 7 The diagram shows a bottom view of the flow controller.

[0025] Figure 9 This indicates that according to an embodiment of the present invention, it possesses Figure 1 The diagram shows the structure of the plasma deposition apparatus with the gas supply structure shown. Detailed Implementation

[0026] The deposition apparatus of a preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, and those skilled in the art can implement the present invention in many different ways without departing from the technical concept of the present invention.

[0027] In the accompanying drawings, for clarity of the invention, the dimensions of the substrate, layer (film), region, pattern, or structure are shown enlarged compared to the actual dimensions. In this specification, terms such as “parallel,” “orthogonal,” “identical,” “equal,” etc., which define their degree, as well as lengths or angles and physical property values, are not limited to their strict meaning but are interpreted to include a range from which the same function is expected.

[0028] The terminology used in this application is for illustrative purposes only and is not intended to limit the invention. Regarding singular expressions, unless the context explicitly indicates otherwise, the singular expression also includes the plural expression. It should be understood that in this application, terms such as "comprising" or "having" are used to specify the presence of features, numbers, steps, actions, structural elements, components, or combinations thereof described in the specification, and are not intended to preclude the possibility of the presence or addition of one or more other features, numbers, steps, actions, structural elements, components, or combinations thereof.

[0029] Furthermore, when referring to the formation of layers (films), regions, electrodes, patterns, or structures on the substrate, layers (films), regions, electrodes, structures, or patterns as "above," "upper," or "lower," it indicates that the layers (films), regions, electrodes, patterns, or structures are directly formed above or below the substrate, layers (films), regions, structures, or patterns, or that other layers (films), other regions, other electrodes, other patterns, or other structures may be further formed on the substrate. Furthermore, when referring to substances, layers (films), regions, electrodes, patterns, or structures using "first," "second," "third," and / or "quasi," it is not intended to limit such components, but rather to distinguish individual substances, layers (films), regions, electrodes, patterns, or structures. Therefore, "first," "second," "third," and / or "quasi" may be used selectively or interchangeably for each layer (film), region, electrode, pattern, or structure.

[0030] Figure 1 This is a structural diagram illustrating a gas supply structure for a plasma device according to an embodiment of the present invention.

[0031] Reference Figure 1According to an embodiment of the present invention, a gas supply structure 300 for a plasma device includes: a main body 310 having a branch flow space DFS, a plurality of peripheral holes PH connected to the branch flow space DFS and a single central hole CH; a first supply port 320 having a first flow space FS1 and a second supply port 330 having a second flow space FS2; and a nozzle 340.

[0032] The main body 310 is provided with a three-dimensional shape having a head space HS of a predetermined size as a gas storage space, thereby providing the external shape of the gas supply structure 300. The source gas for performing the plasma process is supplied to the head space HS of the main body 310 and injected into the interior of the chamber through the nozzle SH provided in the nozzle 340.

[0033] Therefore, the main body 310 is disposed inside the plasma deposition chamber and exposed to various plasmas. Thus, the main body 310 can be constructed into various three-dimensional structures as long as it has sufficient resistance to plasma etching and the strength to maintain its shape.

[0034] For example, the upper surface 311 of the body 310 is provided as a flat surface, and the lower surface is recessed to a predetermined depth to provide a recess for forming the head space HS. Therefore, the recess is defined by the back surface 312 of the body 310 and the peripheral wall 313. A nozzle 340 is attached to the end of the peripheral wall 313, and the recess is provided as the head space HS defined by the back surface 312 of the body 310, the peripheral wall 313, and the nozzle 340.

[0035] Depending on the characteristics of the gas supply structure 300, the shape of the substrate W, and the characteristics of the plasma deposition process, the body 310 can be provided in various shapes. In this embodiment, for plasma deposition used in manufacturing a display panel, the body 310 can be provided in a quadrilateral flat plate shape. However, depending on the shape and characteristics of the substrate for the display panel, the body 310 can obviously also be provided in a circular or polygonal shape.

[0036] In particular, a plurality of branch flow spaces (DFS) are provided inside the main body 310, and a plurality of holes and openings are provided to connect with the branch flow spaces (DFS). The plurality of branch flow spaces (DFS) can extend in different directions from each other and are linear.

[0037] Figure 2a It means Figure 1 The diagram shows a top view of the main body of the gas supply structure. Figure 2b It means Figure 2a The rear view of the main body shown.

[0038] Reference Figure 2a and Figure 2b A central opening CO, communicating with the first supply port 320, is provided at the center of the upper surface 311 of the main body 310, and multiple holes PH and CH, communicating with the head space HS, are provided on the back surface 312. Therefore, the branch flow space DFS communicates with the outside through the central opening CO, and communicates with the head space HS through the multiple peripheral holes PH and the central hole CH.

[0039] The central hole CH is configured to have a smaller size than the central opening CO, and a plurality of peripheral holes PH are distributed around the central hole CH. In particular, in this embodiment, the central hole CH and the central opening CO may be configured to have the same center and overlap each other in the vertical direction I.

[0040] Therefore, the second supply port 330, described later, is connected to the central hole CH and extends into the interior of the first supply port 320, which is connected to the central opening CO. The lower end of the second supply port 330 is connected to the inner side of the central hole CH. That is, the first supply port 320 and the second supply port 330 share the same central axis, and the second supply port 330 can be provided in the central portion inside the first supply port 320.

[0041] At this time, the peripheral hole PH can be set together with the central hole CH so that the gas stored in the head space HS can be uniformly injected through the back side 312 of the body 310.

[0042] For example, the peripheral holes PH can be configured in a shape symmetrical about the central hole CH, or the peripheral holes PH can be positioned at equal distances from each side of the body 310 and along the outer contour of the body 310. The distribution of the peripheral holes PH and the central hole CH can obviously be modified in various ways as long as the uniformity of gas injection through the nozzle SH can be improved.

[0043] The main body 310 is provided with a first supply port 320 and a second supply port 330 for supplying a first gas G1 and a second gas G2 that are different from each other.

[0044] Figure 3a It means Figure 1 The top view of the combined structure of the first and second supply ports shown. Figure 3b It means Figure 3a The rear view of the combined structure of the first and second supply ports shown.

[0045] Reference Figure 1 , Figure 3a and Figure 3bThe first supply port 320 has a first flow space FS1 for supplying a first gas G1, and is connected to the body 310 in such a way that the first flow space FS1 is connected to the central opening CO. The second supply port 330 has a second flow space FS2 for supplying a second gas G2, and is connected to the body 310 in such a way that the second flow space FS2 is connected to the central opening CH and the first flow space FS1.

[0046] For example, the first supply port 320 may extend along a vertical direction I perpendicular to the upper surface 311 of the body 310, and is provided in a cylinder shape covering the central opening CO. Therefore, the first flow space FS1 communicates with the branch flow space DFS inside the body 310 through the central opening CO.

[0047] At this time, the second supply port 330 is provided to be fixed to the cylinder shape of the body 310 in such a way that the central hole CH communicates with the second flow space FS2, and is configured to extend in the vertical direction I and extend into the interior of the first flow space FS1.

[0048] In this embodiment, the first supply port 320 is provided as an integral part of the body 310, and the second supply port 330 is fixed to the body 310 at the periphery of the central hole CH and inserted into the interior of the first supply port 320.

[0049] In this embodiment, although the first supply port 320 and the second supply port 330 are provided as cylinder-shaped pipe structures, they can obviously have various shapes and structures as long as they can transmit gas from the outside of the main body 310 to the head space HS.

[0050] The first supply port 320 has a first connection end 321 connected to a first supply line SL1 for supplying the first gas G1. Thus, the first gas G1 is supplied from the first gas storage unit GR1 to the first flow space FS1 via the first supply line SL1. The first connection end 321 may be located on either the upper end or the side of the first supply port 320.

[0051] In this embodiment, the first connection end 321 may be composed of a fixed flange and a connecting mechanism. The fixed flange is disposed at the upper end of the first supply port 320 and extends in the radial direction. The connecting mechanism passes through the fixed flange to fix the first supply line SL1 to the fixed flange.

[0052] When the first connection end 321 is located on the side of the first supply port 320, since the first supply line SL1 is connected to pass through the first supply port 320, the first connection end 321 can be constructed from various sealing and fixing components.

[0053] The first supply line SL1 may be constructed as a gas transmission pipe or tube that connects a first gas storage unit GR1 containing a first gas G1 and a first supply port 320, and has a first flow regulating mechanism V1 that can regulate the flow rate of the first gas G1 supplied to the first supply port 320.

[0054] Therefore, the type of the first gas G1 supplied to the first supply port 320 can be easily changed by altering the first supply line SL1 connected to the first connection terminal 321.

[0055] The second supply port 330 has a second connection end 331 that is connected to the second supply line SL2 for supplying the second gas G2. Thus, the second gas G2 is supplied from the second gas storage unit GR2 to the second flow space FS2 via the second supply line SL2.

[0056] At this time, since the second supply port 330 is located inside the first supply port 320, the second supply line SL2 continuously passes through the side of the first supply port 320 and the second supply port 330 and is connected to the second flow space FS2.

[0057] For example, the second connection end 331 may be constructed with an inlet opening and a sealing mechanism. The inlet opening is located on the side of the second supply port 330, and the sealing mechanism is used to connect the inlet opening and the second supply line SL2 and prevent leakage of the second gas G2. Similarly, the second connection end 331 may be further located on the side of the first supply port 320 to prevent the first gas G1 flowing in the first flow space FS1 from leaking through the connection between the second supply line SL2 and the first supply port 320.

[0058] The second supply line SL2 may be constructed as a gas transmission pipe or tube that connects a second gas storage section GR2 containing the second gas G2 and a second supply port 330, and has a second flow regulating mechanism V2 that can regulate the flow rate of the second gas G2 supplied to the second supply port 330.

[0059] Similar to the first supply line SL1, the type of the second gas G2 supplied to the second supply port 330 can be easily changed by altering the second supply line SL2 connected to the second connection terminal 331.

[0060] At this time, the second supply port 330 is configured to have a smaller cross-sectional area than the first supply port 320 and to have the same center as the first supply port 320, and is configured to partially overlap the second flow space FS2 with the first flow space FS1. That is, the second supply port 330 is configured to be inserted into the interior of the first supply port 320.

[0061] In particular, the second supply port 330 is configured to be open at both its upper and lower ends, thereby communicating with the second flow space FS2 and the first flow space FS1, and the upper end of the second supply port 330 is configured to be lower than the upper end of the first supply port 320. Therefore, it is configured to have a predetermined interval between the upper end of the second supply port 330 and the upper end of the first supply port 320.

[0062] Therefore, the first flow space FS1 is reduced in the lower part of the first supply port 320 to a divided flow space SFS divided by the second supply port 330. That is, the first flow space FS1 is separated into a divided flow space SFS and a second flow space FS2 in the lower part of the first supply port 320.

[0063] The segmented flow space SFS is connected to the branch flow space DFS located inside the main body 310, and is also connected to the head space HS through the peripheral hole PH. Additionally, the second flow space FS2 is connected to the head space HS through the central hole CH.

[0064] The first gas G1, supplied to the first supply port 320 via the first supply line SL1, flows downward along the first flow space FS1, while being divided into the second flow space SFS and the second flow space FS2, and flows into the second supply port 330 and the branch flow space DFS inside the main body 310 respectively.

[0065] At this time, the dimensions of the first flow space FS1 and the second flow space FS2 can be adjusted to uniformly spray the first gas G1 through the central hole CH provided in the central part of the main body 310 and the peripheral hole PH provided in the peripheral part of the main body 310.

[0066] When the first gas G1 flows uniformly inside the first supply port 320 and the second supply port 330, and the central hole CH and the peripheral holes PH have the same hole size, the first gas G1 with a flow rate equivalent to the flow rate injected through all the peripheral holes PH flows through the segmented flow space SFS, and the first gas G1 with a flow rate equivalent to the flow rate injected through the central hole CH flows along the second flow space FS2.

[0067] Since the flow rates of the segmented flow space SFS and the second flow space FS2 are proportional to their cross-sectional areas, the number ratio of the peripheral holes PH and the central holes CH is essentially the same as the ratio of the cross-sectional areas of the segmented flow space SFS and the second flow space FS2.

[0068] Therefore, when the main body 310 is provided with n peripheral holes PH and a central hole CH, the flow rates of the segmented flow space SFS and the second flow space FS2 are as shown in the following formula (1).

[0069]

[0070] (Where, D1 and D2 are the diameters of the first and second supply ports 320 and 330, respectively, and Q is the flow rate of the first gas G1 supplied to the first supply port 320. n is the number of peripheral holes.)

[0071] Therefore, the diameter D2 of the second supply port 330 can be obtained as shown in equation (2).

[0072]

[0073] That is, when the second supply port 330 inserted into the first supply port 320 has a diameter that satisfies equation (2), the flow rate of the first gas G1 injected from each of the n peripheral holes PH is substantially the same as the flow rate of the first gas G1 injected through the central hole CH. Thus, the first gas G1 can be uniformly injected through the entire facing head space HS of the back surface 312 of the main body 310. The uniformity of the distribution of the first gas G1 in the head space HS will improve the uniformity of the first gas G1 injected through the nozzle SH (described later).

[0074] In the case of this embodiment, when the main body 310 is provided with four peripheral holes PH and one central hole CH, the diameter D2 of the second supply port 330 can be set to approximately 1 / 2.23 times the diameter D1 of the first supply port 320.

[0075] In addition, the second gas G2 is directly supplied to the second supply port 330 via the second supply line SL2 and flows downward. At this time, in order to prevent the second gas G2 from flowing back into the divided flow space SFS above the second supply port 330, the second connection end 331 is positioned sufficiently below the upper end of the second supply port 330.

[0076] Figure 4a It means via Figure 1 The diagram shown illustrates the process of supplying the first gas G1 through the first supply port. Figure 4b It means via Figure 1 The diagram shows the process of supplying the second gas G2 through the second supply port.

[0077] like Figure 4a and Figure 4b As shown, the first gas G1 flowing into the upper part of the first supply port 320 via the first supply line SL1 is separated into a flow space SFS and a second flow space FS2 at the lower part of the first supply port 320 and supplied to the main body 310. The first gas G1 supplied to the flow space SFS flows into a branch flow space DFS extending to the periphery of the main body 310 and is injected into the head space HS through a peripheral hole PH connected to the branch flow space DFS. Since the first gas G1 is supplied with a uniform flow rate through each peripheral hole PH, the uniformity of gas injection can be improved at the periphery of the back surface 312 of the main body 310.

[0078] In addition, since the second flow space FS2 is separated from the branch flow space DFS by the second supply port 330 and connected to the central hole CH, the first gas G1 flowing into the second flow space FS2 will not diffuse to the peripheral hole PH, but will only be injected into the head space HS through the central hole CH.

[0079] Thus, the first gas G1 is uniformly injected into the head space HS through the entire surface of the back surface 312.

[0080] Furthermore, the second gas G2 flows into the second supply port 330 via the second supply line SL2 and flows downwards. Specifically, since the second connection end 331 is sufficiently spaced from the upper end of the second supply port 330 and is subjected to a downward vacuum pressure during process execution, the upward backflow of the second gas G2 is blocked, and it flows only downwards. At this time, since the branch flow space DFS and the second flow space FS2 are separated from each other, the second gas G2 is injected only through the central hole CH. Thus, the second gas G2 is injected into the head space HS only through the central portion of the main body 310.

[0081] Therefore, according to the gas supply structure 300, the first gas G1 is uniformly injected into the head space HS through the back surface 312 of the main body 310, but the second gas G2 is concentratedly injected into the head space HS only in the central part of the main body 310.

[0082] In this embodiment, the first gas G1 and the second gas G2 can be provided in various ways depending on the device equipped with the gas supply structure 300. For example, when the gas supply structure 300 is configured as a gas supply device for a plasma deposition apparatus, the first gas G1 may include a cleaning gas for cleaning the interior of the plasma deposition apparatus, and the second gas G2 may include a process gas for performing the plasma process.

[0083] Refer again Figure 1The nozzle 340 provides a head space HS by being attached to the lower part in a manner opposite to the back surface 312 of the body 310, and sprays the gas stored in the head space HS downward through the nozzle SH.

[0084] For example, the nozzle 340 is coupled to the end of the peripheral wall 313 that protrudes from the back face 312, thereby providing the recess defined by the back face 312 and the peripheral wall 313 as a head space HS.

[0085] For example, when the peripheral wall 313 protrudes from the back surface 312 of the body 310 with a fixed thickness t, a recess with a depth corresponding to the thickness t is provided between the back surface 312 and the peripheral wall 313. Therefore, a head space HS with a capacity determined by the size and thickness t of the back surface 312 can be constructed by arranging the nozzle 340 in a manner that engages with the end of the peripheral wall 313.

[0086] When the gas supply structure 300 is provided as a gas supply device for a plasma deposition apparatus, the nozzle 340 can be constructed from a head plate with uniformly distributed nozzles SH and sufficient etch resistance to the generated plasma. An electrode structure 342 can be selectively provided inside the nozzle 340, the electrode structure 342 being used to form the gas supplied through the nozzle 340 into a plasma state.

[0087] When the first gas G1 and the second gas G2 are supplied to the head space HS, they are uniformly sprayed into the process chamber of the plasma deposition apparatus through the nozzle SH.

[0088] Depending on the positions of the first and second gas storage sections GR1 and GR2, the first supply port 320 and the second supply port 330 can be modified in various ways.

[0089] Figure 5 This is a structural diagram illustrating a gas supply structure according to another embodiment of the present invention. Figure 5 In another embodiment of the present invention, the gas supply structure 300a includes an extension unit EU, which is connected to a first supply port 320 and a second supply port 330 and extends the gas delivery line. Figure 5 In the middle, to and Figure 1 The same structural elements use the same reference numerals, and further detailed descriptions of the same structural elements are omitted.

[0090] Reference Figure 5In another embodiment of the present invention, the gas supply structure 300a can be further provided with an extension unit EU to separate the gas supply unit SU from the main body 310. The extension unit EU is provided between the gas supply unit SU for supplying gas and the gas inflow unit IU for allowing gas to flow into the main body 310 and extends the gas flow path.

[0091] For example, the gas supply unit SU is constructed with the upper part of the first supply port 320 and the upper part of the second supply port 330. The first supply port 320 is connected to the first supply line SL1 connected to the first gas storage unit GR1 and has a first flow space FS1. The second supply port 330 is connected to the second supply line SL2 connected to the second gas storage unit GR2 and has a second flow space FS2.

[0092] Specifically, a first connecting end 321 is provided on the side wall of the first supply port 320, and a second connecting end 331 is provided on the side wall of the second supply port 330 below the first connecting end 321. Thus, the first supply line SL1 passes through the side of the first supply port 320 and connects to the first flow space FS1, and the second supply line SL2 passes through the side of the second supply port 330 and connects to the second flow space FS2.

[0093] The gas inflow unit IU is constructed by a first supply port 320 connected to the main body 310 in communication with the central opening CO, and a second supply port 330 disposed inside the first supply port 320 and connected to the main body 310 in communication with the central hole CH.

[0094] The gas supply unit SU and the gas inflow unit IU have the same characteristics as... Figure 1 The upper and lower parts of the first supply port 320 and the second supply port 330 disclosed herein have substantially the same structure. Hereinafter, the first supply port 320 of the gas supply unit SU will be named upper outer port 320a, and the first supply port 320 of the gas inflow unit IU will be named lower outer port 320b. Furthermore, the second supply port 330 of the gas supply unit SU will be named upper inner port 330a, and the second supply port 330 of the gas inflow unit IU will be named lower inner port 330b.

[0095] The extension unit EU includes: a first extension port 350 for connecting the upper outer port 320a and the lower outer port 320b to each other; and a second extension port 360 for connecting the upper inner port 330a and the lower inner port 330b to each other.

[0096] For example, the first extension port 350 is provided as a tube structure with the same diameter as the first supply port 320, and is provided to connect the lower end of the upper outer port 320a and the upper end of the lower outer port 320b to each other.

[0097] Thus, the upper outer port 320a and the lower outer port 320b are arranged in the vertical direction I, the first extension port 350 is arranged in the horizontal direction II, and the first gas G1 flows in the vertical direction I and is then transported in the horizontal direction II before being supplied to the main body 310 again in the vertical direction I.

[0098] The second extension port 360 is disposed inside the first extension port 350 and is provided as a tubular structure with the same diameter as the second supply port 330. Furthermore, the second extension port 360 is provided to connect the lower end of the upper inner port 330a and the upper end of the lower inner port 330b to each other, and has a profile corresponding to the shape of the first extension port 350.

[0099] Since the upper inner port 330a and the lower inner port 330b are also respectively arranged in the vertical direction I inside the upper outer port 320a and the lower outer port 320b, and the second extension port 360 is arranged in the horizontal direction II, the second gas G2 also flows in the vertical direction I and is then transported in the horizontal direction II before being supplied to the main body 310 again in the vertical direction I.

[0100] The second flow space FS2 extends from the interior space of the second supply port 330 to the interior space of the second extension port 360, and the first flow space FS1 also extends from the interior space of the first supply port 320 to the interior space of the first extension port 350. That is, the first extended flow space EFS1, which is the interior space of the first extension port 350, communicates with the first flow space FS1 to provide an expanded first flow space, and the second extended flow space EFS2, which is the interior space of the second extension port 360, communicates with the second flow space FS2 to provide an expanded second flow space. In particular, the first flow space FS1 and the first extended flow space EFS1 are separated by the second supply port 330 and the second extension port 360 to form the second flow space FS2 and the second extended flow space EFS2. Thus, the divided flow space SFS also extends from the lower outer port 320b via the first extension port 350 to the lower part of the upper outer port 320a.

[0101] Therefore, the first gas G1 is supplied to the upper part of the upper outer port 320a and flows downwards, passing through the first and second extended flow spaces EFS1, EFS2 and the first and second flow spaces FS1, FS2, and is injected into the head space HS through the peripheral hole PH and the central hole CH. In contrast, the second gas G2 is supplied to the second flow space FS2 of the upper inner port 330a through the second supply line SL2 located below the first supply line SL1, and is injected into the head space HS through the second extended flow space EFS2, the second flow space FS2 of the lower inner port 330b, and the central hole CH.

[0102] Therefore, by providing extension ports for connecting the upper and lower ports of the first and second supply ports 320 and 330, gas can be stably supplied to the main body 310 regardless of the position of the gas storage section.

[0103] In this embodiment, although the first and second extension ports 350 and 360 are disclosed as having a single horizontal line shape, depending on the equipment structure in which the gas storage section, supply line and the main body 310 are provided and the external environment between the gas storage section and the equipment, it is obvious that multiple bends may also be provided.

[0104] In particular, a forced flow structure 370 may be further provided above the upper outer port 320a. This forced flow structure 370 is used to force the supplied first and second gases G1 and G2 to flow in the direction of the first and second extension ports 350 and 360 and the lower outer port and lower inner port 320b and 330b. This can improve the gas delivery efficiency of the extension unit EU.

[0105] When a plasma process is performed in a plasma apparatus equipped with the gas supply structure 300a, the extension unit EU is also subjected to the same vacuum pressure as the lower part of the nozzle 340. As a result, the gas supplied by the gas supply unit SU flows into the main body 310.

[0106] The forced flow structure 370 can shorten the gas delivery time by increasing the flow velocity of the gas flowing into the main body 310. Therefore, despite the presence of the extension unit EU, the increase in gas delivery time from the first connection end 321 or the second connection end 331 to the head space HS can be minimized. This minimizes the reduction in gas delivery efficiency caused by the extension unit EU.

[0107] For example, the forced flow structure 370 may include a pressurizing device that can increase the pressure gradient between the pressure gradient and the vacuum pressure applied to the head space HS.

[0108] Figure 6This is a structural diagram showing a gas supply structure according to another embodiment of the present invention. Figure 7 It means Figure 6 The diagram shows a three-dimensional view of the flow controller. Figure 8a It means Figure 7 The cross-sectional view of the flow controller shown is shown. Figure 8b It means Figure 7 The diagram shows a bottom view of the flow controller.

[0109] exist Figure 6 In another embodiment of the present invention, the gas supply structure 300b further includes a flow controller for adjusting the injection density of the gas injected into the head space HS, and in addition, has a flow controller for adjusting the injection density of the gas injected into the head space HS. Figure 1 The gas supply structure shown is essentially the same. Therefore, in Figure 6 China and Figure 1 Structural elements that are identical in the drawings use the same reference numerals, and further detailed descriptions of the same structural elements are omitted.

[0110] Reference Figures 6 to 8b In another embodiment of the present invention, the gas supply structure 300b further includes a flow controller 380, which is coupled to at least one of the peripheral orifice PH and the central orifice CH for adjusting the injection density of the gas injected into the lower part of the body 310. The first gas G1 and the second gas G2 are injected into the head space HS in units of the peripheral orifice PH and the central orifice CH disposed on the back surface 312 of the body 310. Thus, the peripheral orifice PH and the central orifice CH function as the supply starting point for the gas injected into the head space HS.

[0111] At this time, the flow controller 380, in conjunction with the peripheral hole PH and the central hole CH, can improve the uniformity of the gas in the head space HS by arbitrarily adjusting the flow direction of the gas injected into the head space HS.

[0112] For example, the flow controller 380 can divide the gas stream injected from the peripheral orifice PH and the central orifice CH from a single stream with a single flow direction into multiple streams with multiple different flow directions. This allows the gas supplied to the head space HS to be diffused over a relatively wide area, thereby improving the uniformity of gas distribution within the head space HS.

[0113] The flow controller 380, located at the peripheral hole PH, can supply a starting point to spray gas in a spray form at the periphery of the main body 310, thereby improving the uniformity of gas distribution at the periphery of the head space HS. The flow controller 380, located at the central hole CH, can supply a starting point to spray gas in a spray form at the center of the main body 310, thereby improving the uniformity of gas distribution at the center of the head space HS.

[0114] Therefore, the uniformity of gas distribution in the head space HS can be adjusted according to the number and uniformity of the peripheral holes PH, as well as the structure of the peripheral holes PH and the central hole CH.

[0115] In this embodiment, although it is disclosed that the flow controller 380 is provided in both the peripheral hole PH and the central hole CH, depending on the structure of the gas supply structure and the plasma deposition apparatus equipped with it, the flow controller 380 may be provided only in a portion of the peripheral hole PH and the central hole CH.

[0116] For example, the flow controller 380 includes: a connecting tube 382, ​​which is connected to the peripheral hole PH and / or the central hole CH and extends downward toward the body 310; a control body 384, which is connected to the connecting tube 382 and has a buffer space BS communicating with the connecting tube 382; and a plurality of injection nozzles 386, which protrude from the lower surface of the control body 384 and communicate with the buffer space BS.

[0117] The connecting pipe 382 has a connecting component that can be detachably connected to the interior of the peripheral hole PH and / or the central hole CH, allowing for selective connection. For example, the connecting pipe 382 is provided as a pipe structure having a threaded connection or coupling structure and selectively connecting to the internal side of the peripheral hole PH and / or the central hole CH. Thus, gas flowing to the peripheral hole PH and / or the central hole CH flows into the buffer space BS after flowing through the connecting pipe 382.

[0118] The control body 384 is provided as an integral part of the connecting pipe 382 and is provided as a three-dimensional structure having a buffer space BS as a predetermined internal space. Various shapes of three-dimensional structures can be provided as the control body 384, as long as they have a buffer space BS capable of containing gas flowing in through the connecting pipe 382. In this embodiment, although a cylindrical control body 384 is provided, the control body 384 can also be provided as a hexahedral shape or a flask shape.

[0119] The control unit 384 can adjust the flow direction and flow rate of the gas injected through the injection nozzle 386.

[0120] At the lower part of the control body 384, multiple injection nozzles 386 are positioned toward the head space HS and supply gas flowing into the buffer space BS to the head space HS.

[0121] At this time, the flow direction of the gas injected into the head space HS can be appropriately adjusted by adjusting the tilt angle of the injection nozzle 386 relative to the back of the control body 384. In this embodiment, the injection nozzle 386 is arranged perpendicularly to the back of the control body 384, so that the gas can also be injected perpendicularly relative to the control body 384.

[0122] However, the injection nozzle 386 can also be inclined at a predetermined angle relative to the back of the control body 384, thereby being positioned towards the center or periphery of the head space HS. For example, when a concentration deviation of the injected gas occurs in the center or periphery of the head space HS due to the shape characteristics or structural features of the body 310, the flow rate of gas supplied to the area with low gas concentration can be increased by adjusting the tilt angle of the injection nozzle 386. This improves the uniformity of gas distribution in the head space HS.

[0123] The injection nozzles 386 can be configured in multiple ways to inject a single gas flow into multiple gas flows. Thus, gas is sprayed into the head space HS through the injection nozzles 386. An appropriate number of injection nozzles 386 can be determined by considering the number of gas flows to be generated and the size of the control body 384.

[0124] Although not shown, the control body 384 may further include a cover (not shown) that can adjust the flow direction and flow rate of the injected gas by individually opening or closing the injection nozzles 386. The cover can adjust the flow direction and flow rate of the injected gas by selectively opening or closing a portion of the injection nozzles 386 at specific locations.

[0125] According to the gas supply structure described above, the first gas G1 is uniformly injected into the head space HS through the peripheral holes PH and the central hole CH of the main body 310, but the second gas G2 is only supplied to the head space HS through the central hole CH. Thus, the first gas G1 injected through the nozzle SH can be uniformly injected through the entire surface of the nozzle 340, but the second gas G2 can be concentratedly injected through the central part of the nozzle 340.

[0126] In particular, by extending the conveying lines of the first supply port 320 and the second supply port 330 by the extension unit EU, the gas supply structure can be arranged in a manner that separates it from the gas storage section. Furthermore, by providing a flow controller 380 in the peripheral hole PH and / or the central hole CH, the uniformity of gas distribution in the head space HS can be further improved.

[0127] Figure 9 This indicates that according to an embodiment of the present invention, it possesses Figure 1 The diagram shows the structure of the plasma deposition apparatus with the gas supply structure shown.

[0128] Reference Figure 9 According to an embodiment of the present invention, a plasma deposition apparatus 500 includes: a process chamber 100 for performing a plasma deposition process; a substrate fixing structure 200 disposed at the lower part of the process chamber 100 and fixing a substrate W; a gas supply structure 300 disposed at the upper part of the process chamber 100 opposite to the substrate fixing structure 200, and supplying process gas G2 and cleaning gas G1 for cleaning the interior of the process chamber 100 to the process chamber 100; and a process controller 400 for controlling the substrate fixing structure 200 and the gas supply structure 300 to perform the plasma deposition process.

[0129] For example, the process chamber 100 is provided as a metallic vacuum chamber and includes a housing suitable for high-temperature plasma processes under vacuum conditions. The process chamber 100 is divided into a lower chamber 110 for housing a substrate fixing structure 200 and an upper chamber 120 for housing a gas supply structure 300, and a plasma space PS for generating plasma is provided in the space between the substrate fixing structure 200 and the gas supply structure 300.

[0130] The substrate fixing structure 200 is disposed in the center of the lower chamber 110 and fixes the substrate W during the plasma process.

[0131] For example, the substrate fixing structure 200 includes a clamping assembly 210 for fixing the substrate W and a lifting assembly 220 capable of raising and lowering the clamping assembly 210.

[0132] The clamp assembly 210 may include a base unit 211 and a temperature adjustment unit 212. The base unit 211 has a shape corresponding to the substrate W and is used to support the substrate W. The temperature adjustment unit 212 is disposed inside the base unit 211 and is used to set the substrate W to the deposition temperature.

[0133] The base unit 211 may include a support frame for supporting the substrate W and a substrate holder for fixing the substrate W. The temperature control unit 212 may include a heating mechanism that can set the substrate W fixed to the base unit 211 to a deposition temperature. The substrate holder may include a mechanical fixing mechanism such as a fixing pin or an electrical fixing mechanism such as an electrostatic clamp. The temperature control unit 212 may include a conductive coil for generating Joule heat. A grounding voltage for grounding the high-frequency power of the generated plasma may be applied to the support frame.

[0134] The lifting assembly 220 may be disposed at the lower part of the base unit 211, enabling the base unit 211 to rise or fall. For example, the lifting assembly 220 may include a drive motor that operates by drive power and a transfer component that moves along the height direction of the process chamber 100 by the drive motor, thereby causing the base unit 211 to rise or fall between the loading position and the process position.

[0135] When the substrate to be deposited is loaded into the process chamber 100 or when the substrate W that has completed deposition is unloaded from the process chamber 100, the lifting assembly 220 lowers the base unit 211 to the loading position. When the substrate to be deposited is fixed to the base unit 211, the lifting assembly 220 raises the base unit 211 to the process position to prepare for the deposition process. Since the space between the substrate W and the nozzle 340 forms a plasma space PS for generating plasma, the size of the plasma space PS can be taken into account to set the process position appropriately.

[0136] An exhaust device equipped with a vacuum pump P is provided at the lower part of the process chamber 100 to discharge the by-products or residual process gases of the plasma process and the by-products or residual cleaning gases of the cleaning process to the outside.

[0137] When the substrate W is fixed on the substrate fixing structure 200 and rises to the process position, plasma process gas G2 is supplied through the gas supply structure 300 to perform the plasma deposition process. When the plasma deposition process is completed, cleaning gas G1 for cleaning the interior of the process chamber 100 is supplied through the gas supply structure 300.

[0138] At this time, inside the first supply port 320 supplying the cleaning gas G1, a second supply port 330 supplying the process gas G2 is inserted in communication with the first supply port 320. The first flow space FS1 located in the first supply port 320 is connected to multiple peripheral holes PH and a central hole CH via the second flow space FS2 located in the second supply port 330 and the branch flow space DFS located in the main body 310. The second flow space FS2 of the second supply port 330 is separate from the branch flow space DFS and is only connected to the central hole CH. The cleaning gas G1 supplied to the first supply port 320 or the process gas G2 supplied to the second supply port 330 flows into the head space HS under the vacuum pressure applied by the vacuum pump P.

[0139] Therefore, the process gas G2 supplied to the second supply port 330 will not be injected through the peripheral holes PH of the main body 310, but will only be injected into the head space HS through the central hole CH. The cleaning gas G1 supplied to the first supply port 320 will be injected not only through multiple peripheral holes PH, but also through the central hole CH, thus being evenly injected into the head space HS.

[0140] Because the gas supply structure 300 has a reference Figure 1 The structure is essentially the same as that of the gas supply structure 300 illustrated in Figure 4, therefore further detailed description of the gas supply structure 300 is omitted.

[0141] Furthermore, the gas supply structure 300 can obviously be implemented as a reference. Figures 5 to 6 The modified gas supply structures 300a and 300b are described.

[0142] The process gas G2, which is injected into the plasma space PS through the nozzle 340, is transformed into plasma due to the high-frequency power applied to the electrode structure 342, thereby performing a plasma deposition process on the substrate W.

[0143] The plasma deposition process is controlled by a process controller 400. The process controller 400 is located outside the process chamber 100 and controls the substrate fixing structure 200 and the gas supply structure 300 to apply high-frequency power to execute the plasma deposition process.

[0144] For example, the process controller 400 includes: a high-frequency power source 410 for supplying high-frequency power; a temperature regulation power source 420 for supplying power to the temperature regulation unit 212; a drive controller 430 for driving the lifting assembly 220 to move it to the loading position and the process position; and a central control unit 440 for controlling the conditions of the plasma deposition process according to the state factors inside the process chamber 100.

[0145] For example, the high-frequency power source 410 may be constructed from an RF power source (not shown) that applies RF (radio frequency) power to the electrode structure 342 to form the process gas G2 into plasma, and the temperature regulation power source 420 may be constructed from a DC power supply that supplies DC current to the temperature regulation unit 212. The drive controller 430 may be constructed from multiple signal control mechanisms that regulate the operating signals of the drive motor.

[0146] The loading of substrate W into process chamber 100 and its ascent to the process position, the inflow of process gas G2 and the execution of plasma deposition process, the unloading of substrate W and the cleaning of the internal structure of process chamber 100 are controlled by the central control unit 440 and executed sequentially according to a series of control routines to complete the plasma deposition process.

[0147] When the substrate W is in the process position, process gas G2 is supplied through the gas supply structure 300 to perform a plasma deposition process on the substrate W. At this time, the process gas G2 is supplied through the second supply port 330 and is ejected only through the central hole CH of the main body 310. As a result, the concentration of the process gas G2 forms a radially varying concentration distribution centered on the central hole CH, independent of the pH of the peripheral holes.

[0148] Since the nozzles SH are uniformly arranged on the entire surface of the nozzle 340, the process gas G2 ejected through the nozzle 340 has the same concentration distribution in the plasma space PS as in the head space HS.

[0149] Therefore, the process plasma is formed radially around the central part of the nozzle 340, and the thickness of the deposited film formed on the substrate W is also uniformly distributed around the central part of the substrate W.

[0150] In conventional gas supply structures that simultaneously supply process gas through the central orifice CH and the peripheral orifice PH, the process gas is distributed around these two orifices. Consequently, the concentration distribution of the process gas in the plasma space PS also exhibits a multi-point distribution centered on the peripheral orifice PH and the central orifice CH. Therefore, while this improves the overall concentration uniformity in the plasma space PS, it also creates local high-density points in the region corresponding to the peripheral orifice PH.

[0151] Since the thickness of the deposited film formed on the substrate W by plasma deposition depends on the plasma concentration, the thickness of the deposited film also increases corresponding to local high plasma concentration points. Consequently, the thickness of the deposited film increases on the upper surface of the substrate W corresponding to the peripheral holes (PH), reducing the film thickness uniformity.

[0152] However, in this embodiment, since the supply of process gas G2 through the peripheral aperture PH is blocked, and process gas G2 is supplied only through the central aperture CH, local high density points of plasma formed in the region corresponding to the peripheral aperture PH can be removed. This prevents the formation of a thicker deposited film in the region corresponding to the peripheral aperture PH on the substrate W, thereby improving the film thickness uniformity.

[0153] When the deposition process of the substrate W is completed, the lifting assembly 220 returns to the loading position, unloads the substrate W from the process chamber 100, and performs a cleaning process on the internal structure of the process chamber 100, including the inner sidewall.

[0154] For example, the cleaning gas G1 is supplied to the first supply port 320 and simultaneously injected into the head space HS through the peripheral hole PH and the central hole CH. When the cleaning gas G1 is supplied to the first flow space FS1, a vacuum pressure is applied to the interior of the process chamber 100 by a vacuum pump P regulated by the central control unit 440. As a result, the cleaning gas G1 flows downwards from the process chamber 100 and flows along the second flow space FS2, which divides the flow space SFS and the second supply port 330.

[0155] The cleaning gas G1 supplied to the segmented flow space SFS passes through the branch flow space DFS of the main body 310 and is injected into the head space HS through multiple peripheral holes PH. The cleaning gas G1 supplied to the second flow space FS2 is injected into the head space HS through the central hole CH. At this time, the flow rate of the cleaning gas G1 injected through each peripheral hole PH is set to be the same as the flow rate of the cleaning gas G1 injected through the central hole CH.

[0156] Therefore, the cleaning gas G1 is distributed in the head space HS around the central hole CH and the peripheral hole PH. Consequently, the concentration distribution of the cleaning gas G1 injected into the plasma space PS also forms a multi-point distribution centered on the peripheral hole PH and the central hole CH. That is, the cleaning gas G1 forms a local high density point in the region corresponding to the peripheral hole PH, improving the overall concentration uniformity in the plasma space PS.

[0157] Since the cleaning process for the internal structure of the process chamber 100 is a process for removing impurities from the internal structure, it differs from the deposition process. Therefore, even if the cleaning gas G1 has a locally high concentration in the region corresponding to the pH of the surrounding holes, it will not cause quality differences in the overall impurity removal process. On the contrary, even with a locally high concentration, it improves the overall concentration uniformity of the cleaning gas G1 in the plasma space PS, thereby enhancing the cleaning uniformity. As a result, uniform cleaning can be performed on the internal structure of the process chamber 100.

[0158] Therefore, when performing a plasma deposition process on the substrate W, the deposition uniformity and cleaning uniformity can be improved simultaneously by supplying process gas G2 only to the center of the gas supply structure 300 and simultaneously supplying cleaning gas G1 to the periphery and center of the gas supply structure 300.

[0159] According to the gas supply structure and plasma deposition apparatus described above, a first supply port 320 is provided on the upper part of a main body 310 having a branch flow space DFS, a plurality of peripheral holes PH communicating with the branch flow space DFS, and a single central hole CH. A second supply port 330 is provided inside the first supply port 320 in a manner communicating with the first supply port 320. A first flow space FS1, which is the internal space of the first supply port 320, is connected to the plurality of peripheral holes PH through the branch flow space DFS. The second supply port 330 is connected to the central hole CH. A second flow space FS2, which is the internal space of the second supply port 330, is separated from the branch flow space DFS and is connected to the central hole CH.

[0160] At this time, the cleaning gas G1 is supplied to the first supply port 320 at a position higher than the second supply port 330, and is uniformly supplied through the peripheral hole PH and the central hole CH via the branch flow space DFS and the second flow space FS2, thereby improving the concentration uniformity of the cleaning gas G1.

[0161] In contrast, the flow of process gas G2 supplied to the second supply port 330 into the branch flow space DFS is blocked, and it flows only through the second flow space FS2 and is supplied only through the central hole CH, thereby removing local high concentration points of process gas G2.

[0162] Therefore, the plasma deposition apparatus equipped with the gas supply structure 300 can simultaneously improve the thickness uniformity of the deposited film formed on the substrate W and the cleaning uniformity of the internal structure of the process chamber 100.

[0163] The above description refers to preferred embodiments of the present invention. However, those skilled in the art will understand that the present invention can be modified and altered in various ways without departing from the spirit and scope of the present invention as set forth in the appended claims.

Claims

1. A gas supply structure, comprising: The main body has branch flow spaces extending in different directions inside, and includes a single central hole disposed in the central part of the back of the main body and a plurality of peripheral holes disposed in the peripheral part of the back and communicating with the branch flow spaces respectively. The first supply port is attached to the upper surface of the body in a vertical direction that is perpendicular to the upper surface of the body, and has a first flow space that communicates with the branch flow space. as well as The second supply port is disposed inside the first supply port in a manner connected to the central hole, and has a second flow space that communicates with the first flow space but is separate from the branch flow space. The gas supply structure is configured to supply deposition process gas for performing plasma deposition and cleaning gas for cleaning the interior of the process chamber, and is configured such that: when performing the plasma deposition process, the deposition process gas is supplied to the second supply port and is ejected only from the central hole via the second flow space; when cleaning the interior of the process chamber, the cleaning gas is supplied to the first supply port and, after passing through the first flow space, is ejected from the plurality of peripheral holes and the central hole via the branch flow space and the second flow space.

2. The gas supply structure according to claim 1, wherein, The second supply port extends in the vertical direction such that the lower end of the second supply port is joined to the inner side of the central hole and the upper end of the second supply port is lower than the upper end of the first supply port.

3. The gas supply structure according to claim 1, wherein, The first supply port is in the shape of a cylinder with a first diameter, and the second supply port is in the shape of a cylinder with a second diameter smaller than the first diameter.

4. The gas supply structure according to claim 3, wherein, The plurality of peripheral holes and the central hole have the same cross-sectional dimensions, and the second diameter is set to satisfy equation (1). （1） Wherein, D2 represents the second diameter, D1 represents the first diameter, and n represents the number of peripheral holes.

5. The gas supply structure according to claim 1, wherein, The main body has a central opening that extends through the upper surface and communicates with the branch flow space and has a size larger than the central hole. The first supply port is combined with the main body in such a way that the central opening communicates with the first flow space.

6. The gas supply structure according to claim 5, wherein, The central opening and the central hole have the same common center and are configured to overlap each other.

7. The gas supply structure according to claim 1, further comprising a nozzle disposed at the lower part of the main body and defining a head space for storing gas between the nozzle and the rear side, the nozzle having a plurality of nozzle holes for uniformly spraying the gas from the head space to the outside.

8. The gas supply structure according to claim 7, wherein, The main body further includes a peripheral wall extending from the periphery of the back side, and the nozzle is coupled to the end of the peripheral wall and has a flat plate shape with the nozzle holes evenly distributed thereon.

9. A plasma deposition apparatus, comprising: A process chamber for performing plasma deposition processes; A substrate fixing structure disposed in the lower part of the process chamber and fixing the substrate to be deposited; as well as A gas supply structure is disposed above the process chamber, opposite to the substrate fixing structure, and supplies the process chamber with deposition process gas and cleaning gas for cleaning the interior of the process chamber. The gas supply structure includes: The main body has branch flow spaces extending in different directions inside, and includes a single central hole disposed in the central part of the back of the main body and a plurality of peripheral holes disposed in the peripheral part of the back and communicating with the branch flow spaces respectively. The first supply port is attached to the upper surface of the body in a vertical direction that is perpendicular to the upper surface of the body, and has a first flow space that communicates with the branch flow space. as well as The second supply port is disposed inside the first supply port in a manner connected to the central hole, and has a second flow space that communicates with the first flow space but is separate from the branch flow space. The gas supply structure is configured such that, during the plasma deposition process, the deposition process gas is supplied to the second supply port and is ejected only from the central hole via the second flow space; when cleaning the interior of the process chamber, the cleaning gas is supplied to the first supply port and, after passing through the first flow space, is ejected from the plurality of peripheral holes and the central hole via the branch flow space and the second flow space.

10. The plasma deposition apparatus according to claim 9, wherein, The second supply port extends vertically such that its lower end engages with the inner side of the central hole and its upper end is positioned lower than the upper end of the first supply port. The first supply port is in the shape of a cylinder with a first diameter, and the second supply port is in the shape of a cylinder with a second diameter smaller than the first diameter.

11. The plasma deposition apparatus according to claim 10, wherein, The plurality of peripheral holes and the central hole have the same cross-sectional dimensions, and the second diameter is set to satisfy equation (1). （1） Wherein, D2 represents the second diameter, D1 represents the first diameter, and n represents the number of peripheral holes.

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