Electroluminescent display device and head-mounted display device

Abstract

Disclosed are an electroluminescent display device and a head-mounted display device. The electroluminescent display device includes: first to third sub-pixels, each of the first to third sub-pixels including a contact region and a light-emitting region, each sub-pixel being provided with a first electrode, the first electrode extending from the light-emitting region of the respective sub-pixel to the contact region; a first reflective layer, the first reflective layer being provided in the light-emitting region of the first sub-pixel and electrically insulated from the first electrode of the first sub-pixel; a second reflective layer, the second reflective layer being provided at least in the light-emitting region of the second sub-pixel; and a third reflective layer, the third reflective layer being provided at least in the light-emitting region of the third sub-pixel.

Description

[0001] Cross-reference of related applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2020-0155435, filed on November 19, 2020, which is incorporated herein by reference as if fully set forth herein. Technical Field

[0003] This disclosure relates to electroluminescent display devices. Background Technology

[0004] An electroluminescent display device has a structure in which a light-emitting layer is formed between an anode electrode and a cathode electrode, and displays an image by causing the light-emitting layer to emit light through an electric field between the two electrodes.

[0005] The light-emitting layer may include organic materials that emit light by causing excitons generated by the combination of electrons and holes to transition from an excited state to a ground state, or may include inorganic materials such as quantum dots.

[0006] The emissive layer can be configured to emit different colors of light for each subpixel, such as red, green, and blue light for each subpixel, or it can be configured to emit the same color of light for each subpixel, such as white light.

[0007] A method to improve luminous efficiency by implementing a microcavity in each sub-pixel has been proposed in related technologies.

[0008] However, since each subpixel of the anode electrode or light-emitting layer has a different thickness to achieve the microcavity of each subpixel, the process is difficult to control. Summary of the Invention

[0009] This disclosure was made in view of the above-mentioned problems, and the purpose of this disclosure is to provide an electroluminescent display device that is easy to control in terms of process and improves luminous efficiency by realizing a microcavity.

[0010] According to one aspect of this disclosure, the above and other objectives can be achieved by providing an electroluminescent display device, the electroluminescent display device comprising: a substrate having a first sub-pixel, a second sub-pixel, and a third sub-pixel; a circuit element layer disposed on the substrate and including a driving thin-film transistor disposed in each of the first to third sub-pixels; a reflective layer disposed above the circuit element layer and including a first reflective layer disposed in the first sub-pixel, a second reflective layer disposed in the second sub-pixel, and a third reflective layer disposed in the third sub-pixel; a first electrode disposed in each of the first, second, and third sub-pixels and disposed above the reflective layer, the first electrode in each sub-pixel being electrically connected to the driving thin-film transistor in the sub-pixel via a contact electrode; a light-emitting layer disposed on the first electrode; and a second electrode disposed on the light-emitting layer, wherein the first electrode of the first sub-pixel is electrically connected to the driving thin-film transistor of the first sub-pixel via a first contact electrode, and the first reflective layer is electrically insulated from the first electrode and the first contact electrode of the first sub-pixel.

[0011] According to another aspect of this disclosure, the above and other objectives can be achieved by providing an electroluminescent display device, the electroluminescent display device comprising: first to third sub-pixels, each of the first to third sub-pixels including a contact area and a light-emitting area, each sub-pixel being provided with a first electrode extending from the light-emitting area of ​​the respective sub-pixel to the contact area; a first reflective layer disposed in the light-emitting area of ​​the first sub-pixel and electrically insulated from the first electrode of the first sub-pixel; a second reflective layer disposed at least in the light-emitting area of ​​the second sub-pixel; and a third reflective layer disposed at least in the light-emitting area of ​​the third sub-pixel.

[0012] In addition to the effects of this disclosure as described above, those skilled in the art will clearly understand other purposes and features of this disclosure from the following description. Attached Figure Description

[0013] The above and other objects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, wherein:

[0014] Figure 1 This is a circuit diagram illustrating an electroluminescent display device according to one embodiment of the present disclosure;

[0015] Figure 2 This is a plan view showing an electroluminescent display device according to one embodiment of the present disclosure;

[0016] Figure 3 This illustrates an electroluminescent display device according to one embodiment of the present disclosure. Figure 2 A cross-sectional view of line AB;

[0017] Figure 4 This illustrates an electroluminescent display device according to another embodiment of the present disclosure. Figure 2 A cross-sectional view of line AB;

[0018] Figure 5 This illustrates an electroluminescent display device according to yet another embodiment of the present disclosure. Figure 2 A cross-sectional view of line AB;

[0019] Figure 6 This illustrates an electroluminescent display device according to yet another embodiment of the present disclosure. Figure 2 A cross-sectional view of line AB;

[0020] Figure 7 This illustrates an electroluminescent display device according to yet another embodiment of the present disclosure. Figure 2 A cross-sectional view of line AB;

[0021] Figure 8 This is a cross-sectional view showing the circuit element layer of the first sub-pixel of an electroluminescent display device according to another embodiment of the present invention;

[0022] Figure 9 This is a cross-sectional view showing the circuit element layer of the first sub-pixel of an electroluminescent display device according to another embodiment of the present invention;

[0023] Figure 10 This is a plan view showing an electroluminescent display device according to another embodiment of the present disclosure;

[0024] Figure 11 It is shown Figure 10 A cross-sectional view of one embodiment of line AB; and

[0025] Figures 12A to 12C This is a view illustrating an electroluminescent display device according to another embodiment of the present disclosure, and relates to a head-mounted display (HMD) device. Detailed Implementation

[0026] Exemplary embodiments of this disclosure will now be described in detail, examples of which are illustrated in the accompanying drawings. Throughout the drawings, the same reference numerals will be used wherever possible to refer to the same or similar parts.

[0027] The advantages and features of this disclosure and its implementation methods will be illustrated by the following description of embodiments with reference to the accompanying drawings. However, this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is defined only by the scope of the claims.

[0028] The shapes, dimensions, ratios, angles, and quantities disclosed in the accompanying drawings for describing embodiments of this disclosure are merely examples, and therefore, this disclosure is not limited to the details shown. Throughout the text, the same reference numerals refer to the same elements. In the following description, detailed descriptions of relevant known functions or configurations will be omitted where such omissions would unnecessarily obscure the essential points of this disclosure.

[0029] Although not explicitly described, the element is interpreted as including a range of errors when it is explained.

[0030] When describing positional relationships, for example, when the positional relationship between two components is described as "on top of", "above", "below", and "near", one or more other components can be placed between the two components, unless "just" or "directly" is used.

[0031] When describing temporal relationships, such as when time sequence is described as “after,” “following,” “next,” and “before,” discontinuous cases may be included unless “exactly” or “directly” is used.

[0032] It should be understood that while the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited to these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0033] As will be fully understood by those skilled in the art, the features of the various embodiments of this disclosure may be coupled or combined with each other in part or in whole, and may cooperate with each other and be technically driven in various ways. Embodiments of this disclosure may be implemented independently of each other or may be implemented together in an interdependent relationship.

[0034] In the following, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0035] Figure 1This is a circuit diagram illustrating an electroluminescent display device according to one embodiment of the present disclosure.

[0036] from Figure 1 It is noted that an electroluminescent display device according to one embodiment of the present disclosure includes a scan line SCAN, a high-voltage power line VDD, a low-voltage power line VSS, a data line DATA, a sensing line SENSE, a driving thin-film transistor T1, a sensing thin-film transistor T2, a switching thin-film transistor T3, a capacitor C, and an organic light-emitting diode OLED.

[0037] The scan line SCAN provides the gate signal to the gate electrode G2 of the sensing thin-film transistor T2 and the gate electrode G3 of the switching thin-film transistor T3.

[0038] The high-voltage power line VDD provides a high-voltage power supply to the drain electrode D1 of the driving thin-film transistor T1.

[0039] The low-voltage power line VSS provides a low-voltage power supply to the second electrode (e.g., the cathode) of the organic light-emitting diode (OLED).

[0040] The data line DATA provides the data signal to the source electrode S3 of the switching thin-film transistor T3.

[0041] The sensing line SENSE is connected to the source electrode S2 of the sensing thin-film transistor T2.

[0042] The driving thin-film transistor T1 is switched according to the data voltage provided from the switching thin-film transistor T3 to generate a data current according to the high-voltage power supply provided by the high-voltage power line VDD, and the generated data current is provided to the organic light-emitting diode OLED.

[0043] The sensing thin-film transistor T2 is designed to sense the threshold voltage difference driving the thin-film transistor T1, which causes a degradation in image quality. The threshold voltage difference can be sensed in sensing mode. In response to a gate signal provided from the scan line SCAN, the sensing thin-film transistor T2 supplies the voltage driving the thin-film transistor T1 to the sensing line SENSE.

[0044] The switching thin-film transistor T3 is switched according to the gate signal provided to the scan line SCAN to supply the data voltage from the data line DATA to the driving thin-film transistor T1. The drain electrode D3 of the switching thin-film transistor T3 is connected to the gate electrode G1 of the driving thin-film transistor T1. It is shown that the sensing thin-film transistor T2 and the switching thin-film transistor T3 are connected to the same scan line SCAN, but are not limited to being connected to the same scan line SCAN. The sensing thin-film transistor T2 and the switching thin-film transistor T3 can be connected to their respective, different scan lines SCAN.

[0045] Capacitor C maintains the data voltage supplied to the driving thin-film transistor T1 for one frame. Capacitor C includes a first capacitor electrode C1 electrically connected to the source electrode S1 of the driving thin-film transistor T1 and a second capacitor electrode C2 electrically connected to the gate electrode G1 of the driving thin-film transistor T1. Depending on the situation, the first capacitor electrode C1 may be electrically connected to the drain electrode D1 of the driving thin-film transistor T1, and this can be equivalently applied to all the following embodiments.

[0046] An organic light-emitting diode (OLED) emits predetermined light according to a data current supplied from a driving thin-film transistor (TFT) T1. The OLED includes an anode, a cathode, and a light-emitting layer disposed between the anode and cathode. The anode of the OLED is connected to the source electrode S1 of the driving TFT T1, and the cathode is connected to a low-voltage power line VSS.

[0047] Figure 2 This is a plan view illustrating an electroluminescent display device according to one embodiment of the present disclosure. Figure 2 Only three sub-pixels are shown.

[0048] As from Figure 2 As noted in the present disclosure, an electroluminescent display device according to one embodiment of the present disclosure includes a substrate 100, first electrodes 310, 320 and 330, contact electrodes 410, 420 and 430, and a dam 600.

[0049] Multiple sub-pixels P1, P2 and P3 are formed on substrate 100.

[0050] Multiple sub-pixels P1, P2, and P3 are provided with multiple light-emitting areas EA1, EA2, and EA3, as well as multiple contact areas CA1, CA2, and CA3.

[0051] Specifically, a first light-emitting area EA1 and a first contact area CA1 are provided in the first sub-pixel P1, a second light-emitting area EA2 and a second contact area CA2 are provided in the second sub-pixel P2, and a third light-emitting area EA3 and a third contact area CA3 are provided in the third sub-pixel P3.

[0052] Multiple luminescent areas EA1, EA2, and EA3 are defined by the embankment 600. Specifically, the areas exposed but not covered by the embankment 600 are the multiple luminescent areas EA1, EA2, and EA3. The first luminescent area EA1 may include a red luminescent area, the second luminescent area EA2 may include a green luminescent area, and the third luminescent area EA3 may include a blue luminescent area, but are not limited thereto.

[0053] Multiple contact areas CA1, CA2, and CA3 can be provided within the area covered by the embankment 600. Therefore, the multiple contact areas CA1, CA2, and CA3 can be positioned on the outer side of one side of the multiple light-emitting areas EA1, EA2, and EA3. For example, the first contact area CA1 can be positioned on the outer side above the first light-emitting area EA1, the second contact area CA2 can be positioned on the outer side above the second light-emitting area EA2, and the third contact area CA3 can be positioned on the outer side above the third light-emitting area EA3, but this is not a limitation. The positions of the contact areas CA1, CA2, and CA3 can be changed in various ways.

[0054] Multiple contact areas CA1, CA2, and CA3 are respectively provided with multiple contact holes CH11 and CH12, CH21 and CH22, and CH31 and CH32, thereby creating a step difference. Therefore, if multiple contact areas CA1, CA2, and CA3 are partially exposed without being covered by the embankment 600 and partially overlap with multiple light-emitting areas EA1, EA2, and EA3, the light-emitting areas EA1, EA2, and EA3 may not emit light uniformly due to the step difference. Therefore, in one embodiment of this disclosure, multiple contact areas CA1, CA2, and CA3 can be covered by the embankment 600, so that multiple contact areas CA1, CA2, and CA3 can be formed so as not to overlap with multiple light-emitting areas EA1, EA2, and EA3. However, the multiple contact areas CA1, CA2, and CA3 are not limited to the above embodiment. That is, at least a portion of the multiple contact areas CA1, CA2 and CA3 may not be covered by the embankment, so that at least a portion of the multiple contact areas CA1, CA2 and CA3 may be formed to overlap with the multiple light-emitting areas EA1, EA2 and EA3.

[0055] First electrodes 310, 320, and 330 are patterned in each sub-pixel P1, P2, and P3. Specifically, one first electrode 310 is formed in the first sub-pixel P1, another first electrode 320 is formed in the second sub-pixel P2, and another first electrode 330 is formed in the third sub-pixel P3. The first electrodes 310, 320, and 330 can be used as the anode of an electroluminescent display device.

[0056] The first electrode 310 of the first sub-pixel P1 extends from the first light-emitting region EA1 to the first contact region CA1, and the portion of the first electrode 310 exposed and not covered by the embankment 600 becomes the first light-emitting region EA1. The first electrode 310 of the first sub-pixel P1 is connected to the first contact electrode 410 in the first contact region CA1.

[0057] The first electrode 320 of the second sub-pixel P2 extends from the second light-emitting region EA2 to the second contact region CA2, and the portion of the first electrode 320 exposed from being covered by the embankment 600 becomes the second light-emitting region EA2. The first electrode 320 of the second sub-pixel P2 is connected to the second contact electrode 420 in the second contact region CA2.

[0058] The first electrode 330 of the third sub-pixel P3 extends from the third light-emitting region EA3 to the third contact region CA3, and the portion of the first electrode 330 exposed and not covered by the embankment 600 becomes the third light-emitting region EA3. The first electrode 330 of the third sub-pixel P3 is connected to the third contact electrode 430 in the third contact region CA3.

[0059] Contact electrodes 410, 420, and 430 are respectively disposed in contact regions CA1, CA2, and CA3. Specifically, the first contact electrode 410 is disposed in the first contact region CA1, the second contact electrode 420 is disposed in the second contact region CA2, and the third contact electrode 430 is disposed in the third contact region CA3.

[0060] The first contact electrode 410 overlaps with and is connected to the first electrode 310 of the first sub-pixel P1 in the first contact area CA1. As shown in the figure, the left and right width of the first contact electrode 410 is greater than the left and right width of the first electrode 310, but it is not limited to this. That is, the left and right width of the first contact electrode 410 can be equal to or less than the left and right width of the first electrode 310.

[0061] The second contact electrode 420 overlaps with the first electrode 320 of the second sub-pixel P2 in the second contact area CA2 and is connected to the first electrode 320. As shown in the figure, the left and right width of the second contact electrode 420 is greater than the left and right width of the first electrode 320, but it is not limited to this. That is, the left and right width of the second contact electrode 420 can be equal to or less than the left and right width of the first electrode 320.

[0062] The third contact electrode 430 overlaps with the first electrode 330 of the third sub-pixel P3 in the third contact area CA3 and is connected to the first electrode 330. As shown in the figure, the left and right width of the third contact electrode 430 is greater than the left and right width of the first electrode 330, but it is not limited to this. That is, the left and right width of the third contact electrode 430 can be equal to or less than the left and right width of the first electrode 330.

[0063] Figure 3 This is a cross-sectional view showing an electroluminescent display device according to one embodiment of the present disclosure, and corresponding to... Figure 2 The cross section of line AB.

[0064] As from Figure 3As noted in the present disclosure, an electroluminescent display device according to one embodiment of the present disclosure includes a substrate 100, a circuit element layer 200, first electrodes 310, 320 and 330, reflective layers 315, 325 and 335, conductive layers 327 and 337, contact electrodes 410, 420 and 430, interlayer dielectric layers 510 and 520, a dam 600, a light-emitting layer 700, a second electrode 800, a sealing layer 850 and a color filter layer 900.

[0065] The substrate 100 may be made of, but is not limited to, glass or plastic. The substrate 100 may be made of a semiconductor material such as a silicon wafer. The substrate 100 may be made of a transparent or opaque material. A first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3 are disposed on the substrate 100. The first sub-pixel P1 may be configured to emit red light, the second sub-pixel P2 may be configured to emit green light, and the third sub-pixel P3 may be configured to emit blue light. The sub-pixels are not limited to the above, and their arrangement order may be changed in various ways.

[0066] An electroluminescent display device according to one embodiment of the present disclosure is configured such that light is emitted upwards from the top, thus opaque materials and transparent materials can be used as materials for the substrate 100.

[0067] The circuit element layer 200 is formed on the substrate 100.

[0068] For each of sub-pixels P1, P2, and P3, the circuit element layer 200 is provided with including Figure 1 The circuit elements described herein include the scan line SCAN, the high-voltage power line VDD, the low-voltage power line VSS, the data line DATA, the sensing line SENSE, the driving thin-film transistor T1, the sensing thin-film transistor T2, the switching thin-film transistor T3, and the capacitor C.

[0069] First electrodes 310, 320, and 330, reflective layers 315, 325, and 335, and contact electrodes 410, 420, and 430 are patterned on circuit element layer 200 for each of sub-pixels P1, P2, and P3. The first electrode 310, the first reflective layer 315, and the first contact electrode 410 are formed in the first sub-pixel P1; another first electrode 320, the second reflective layer 325, and the second contact electrode 420 are formed in the second sub-pixel P2; and another first electrode 330, the third reflective layer 335, and the third contact electrode 430 are formed in the third sub-pixel P3.

[0070] In the first sub-pixel P1, the first electrode 310 extends from the first light-emitting region EA1 to the first contact region CA1. The first contact electrode 410 disposed in the first sub-pixel P1 includes a first lower contact electrode 411, a first center contact electrode 412, and a first upper contact electrode 413, and the first lower contact electrode 411, the first center contact electrode 412, and the first upper contact electrode 413 are formed in the first contact region CA1.

[0071] The first lower contact electrode 411 is disposed on the circuit element layer 200 and electrically connected to the driving thin-film transistor T1 disposed in the first sub-pixel P1. The first center contact electrode 412 is disposed on the first interlayer dielectric layer 510 and connected to the first lower contact electrode 411 through a first contact hole CH11 disposed in the first sub-pixel P1 in the first interlayer dielectric layer 510. The first upper contact electrode 413 is disposed on the second interlayer dielectric layer 520 and connected to the first center contact electrode 412 through a second contact hole CH12 disposed in the first sub-pixel P1 in the second interlayer dielectric layer 520. The first electrode 310 is disposed on the second interlayer dielectric layer 520 and the first upper contact electrode 413. Although not shown, the first electrode 310 can be connected to the first upper contact electrode 413 through a contact hole disposed in a separate interlayer dielectric layer.

[0072] The first reflective layer 315 is disposed in the first light-emitting region EA1 on the circuit element layer 200 in the same manner as the first lower contact electrode 411. The first reflective layer 315 is spaced apart from the first lower contact electrode 411 while being electrically insulated from it. Therefore, the first reflective layer 315 is electrically insulated from the first electrode 310. In the first light-emitting region EA1 of the first sub-pixel P1, a first interlayer dielectric layer 510 and a second interlayer dielectric layer 520 are disposed between the first reflective layer 315 and the first electrode 310.

[0073] The first reflective layer 315 can be used as a reflective layer for realizing a microcavity, and can also be used as a line or electrode for various circuit elements disposed in the circuit element layer 200. That is, the first reflective layer 315 can be made of lines or electrodes of various circuit elements disposed in the circuit element layer 200 as a conductive layer, or can be electrically connected to lines or electrodes.

[0074] A first electrode 320 disposed in the second sub-pixel P2 extends from the second light-emitting region EA2 to the second contact region CA2. A second contact electrode 420 disposed in the second sub-pixel P2 includes a second lower contact electrode 421 and a second upper contact electrode 423, and the second lower contact electrode 421 and the second upper contact electrode 423 are formed in the second contact region CA2. A second reflective layer 325 extends from the second light-emitting region EA2 to the second contact region CA2.

[0075] The second lower contact electrode 421 is disposed on the circuit element layer 200 and electrically connected to the driving thin-film transistor T1 disposed in the second sub-pixel P2. The second reflective layer 325 is disposed on the first interlayer dielectric layer 510 and connected to the second lower contact electrode 421 through a first contact hole CH21 disposed in the second sub-pixel P2 of the first interlayer dielectric layer 510. The second upper contact electrode 423 is disposed on the second interlayer dielectric layer 520 and connected to the second reflective layer 325 through a second contact hole CH22 disposed in the second sub-pixel P2 of the second interlayer dielectric layer 520. The first electrode 320 is disposed on the second interlayer dielectric layer 520 and the second upper contact electrode 423. Although not shown, the first electrode 320 can be connected to the second upper contact electrode 423 through a contact hole disposed in a separate interlayer dielectric layer.

[0076] The second reflective layer 325 is connected to the second lower contact electrode 421 and the second upper contact electrode 423, and is therefore electrically connected to the first electrode 320. The second reflective layer 325 serves as a reflective layer for realizing the microcavity. In the second light-emitting region EA2 of the second sub-pixel P2, a second interlayer dielectric layer 520 is disposed between the second reflective layer 325 and the first electrode 320.

[0077] A first electrode 330 disposed in the third sub-pixel P3 extends from the third light-emitting region EA3 to the third contact region CA3. A third contact electrode 430 disposed in the third sub-pixel P3 includes a third lower contact electrode 431 and a third upper contact electrode 432, and the third lower contact electrode 431 and the third upper contact electrode 432 are formed in the third contact region CA3. A third reflective layer 335 extends from the third light-emitting region EA3 to the third contact region CA3.

[0078] The third lower contact electrode 431 is disposed on the circuit element layer 200 and electrically connected to the driving thin-film transistor T1 disposed in the third sub-pixel P3. The third upper contact electrode 432 is disposed on the first interlayer dielectric layer 510 and connected to the third lower contact electrode 431 through the first contact hole CH31 disposed in the third sub-pixel P3 of the first interlayer dielectric layer 510. The third reflective layer 335 is disposed on the second interlayer dielectric layer 520 and connected to the third upper contact electrode 432 through the second contact hole CH32 disposed in the third sub-pixel P3 of the second interlayer dielectric layer 520. The first electrode 330 is disposed on the third reflective layer 335. Although not shown, the first electrode 330 can be connected to the third reflective layer 335 through a contact hole disposed in a separate interlayer dielectric layer.

[0079] The third reflective layer 335 is in contact with the lower surface of the first electrode 330 and electrically connected to the first electrode 330. The third reflective layer 335 serves as a reflective layer for realizing the microcavity. In the third light-emitting region EA3 of the third sub-pixel P3, no interlayer dielectric layer is provided between the third reflective layer 335 and the first electrode 330.

[0080] As described above, according to one embodiment of this disclosure, microcavity characteristics can be obtained because the distances between the first reflective layer 315 and the first electrode 310 in the first sub-pixel P1, the distances between the second reflective layer 325 and the first electrode 320 in the second sub-pixel P2, and the distances between the third reflective layer 335 and the first electrode 330 in the third sub-pixel P3 are configured differently from each other. In this case, the first electrodes 310, 320, and 330 can be made of transparent or semi-transparent electrodes and can be used as the anodes of the first to third sub-pixels P1, P2, and P3.

[0081] In this disclosure, a reflective layer is a layer for reflecting incident light, a transparent electrode is an electrode for transmitting incident light, and a translucent electrode is an electrode for transmitting a portion of the incident light and reflecting another portion of the incident light. Considering transparency, the transparency increases in the order of reflective layer, translucent electrode, and transparent electrode; and considering reflectivity, the reflectivity increases in the order of transparent electrode, translucent electrode, and reflective layer.

[0082] The conductive layers 327 and 337 include a first conductive layer 327 disposed in the second sub-pixel P2 and a second conductive layer 337 disposed in the third sub-pixel P3.

[0083] A first conductive layer 327 is disposed in the second light-emitting region EA2 on the circuit element layer 200. The first conductive layer 327 is spaced apart from and electrically insulated from the second lower contact electrode 421. Therefore, the first conductive layer 327 is electrically insulated from the second reflective layer 325 and the first electrode 320. The first conductive layer 327 can be used as a line or electrode for various circuit elements disposed in the circuit element layer 200. That is, the first conductive layer 327 can be composed of lines or electrodes for various circuit elements disposed in the circuit element layer 200, or can be electrically connected to such lines or electrodes.

[0084] The second conductive layer 337 is disposed in the third light-emitting region EA3 on the circuit element layer 200. The second conductive layer 337 is spaced apart from and electrically insulated from the third lower contact electrode 431. Therefore, the second conductive layer 337 is electrically insulated from the third reflective layer 335 and the first electrode 330. The second conductive layer 337 can be used as a line or electrode for various circuit elements disposed in the circuit element layer 200. That is, the second conductive layer 337 can be composed of lines or electrodes for various circuit elements disposed in the circuit element layer 200, or can be electrically connected to such lines or electrodes.

[0085] According to one embodiment of the present disclosure, the first reflective layer 315 and the conductive layers 327 and 337 are patterned to be insulated from the first electrodes 310, 320 and 330 in the sub-pixels P1, P2 and P3, respectively. Advantageously, the first reflective layer 315 and the conductive layers 327 and 337 can be used as lines or electrodes for various circuit elements disposed in the circuit element layer 200.

[0086] The first reflective layer 315 and first lower contact electrode 411 of the first sub-pixel P1, the first conductive layer 327 and second lower contact electrode 421 of the second sub-pixel P2, and the second conductive layer 337 and third lower contact electrode 431 of the third sub-pixel P3, arranged on the same layer, are formed of the same material and patterned by the same process.

[0087] The first center contact electrode 412 of the first sub-pixel P1, the second reflective layer 325 of the second sub-pixel P2, and the third upper contact electrode 432 of the third sub-pixel P3, which are arranged on the same layer, are formed of the same material and patterned by the same process.

[0088] The first upper contact electrode 413 of the first sub-pixel P1, the second upper contact electrode 423 of the second sub-pixel P2, and the third reflective layer 335 of the third sub-pixel P3, arranged on the same layer, are formed of the same material and patterned by the same process.

[0089] The first electrode 310 of the first sub-pixel P1, the first electrode 320 of the second sub-pixel P2, and the first electrode 330 of the third sub-pixel P3, arranged on the same layer, are formed of the same material and patterned by the same process.

[0090] In this disclosure, multiple elements disposed on the same layer can be formed from the same material and can be patterned using the same process.

[0091] The dam 600 can be formed on the second interlayer dielectric layer 520 to cover the ends of the first electrodes 310, 320 and 330, thereby solving the problem of reduced luminous efficiency caused by current concentration at the ends of the first electrodes 310, 320 and 330.

[0092] The embankment 600 is formed in a matrix structure in each boundary between the plurality of sub-pixels P1, P2 and P3, and defines light-emitting regions EA1, EA2 and EA3 in the plurality of sub-pixels P1, P2 and P3 respectively. That is, in each sub-pixel P1, P2 and P3, the exposed areas of the first electrodes 310, 320 and 330 that are exposed without the embankment 600 become the light-emitting regions EA1, EA2 and EA3.

[0093] In this case, the embankment 600 can be formed to overlap with the contact regions CA1, CA2, and CA3 in which contact electrodes 410, 420, and 430 are formed. Therefore, each of its contact regions CA1, CA2, and CA3 with a step difference may not overlap with the light-emitting regions EA1, EA2, and EA3.

[0094] Although the dam 600 can be made of a relatively thin inorganic insulating film, the dam 600 can also be made of a relatively thick organic insulating film.

[0095] The light-emitting layer 700 is formed on the first electrodes 310, 320, and 330. The light-emitting layer 700 can even be formed on the embankment 600. That is, the light-emitting layer 700 is formed in each sub-pixel of sub-pixels P1, P2, and P3 and in each boundary region between sub-pixels without being broken.

[0096] The light-emitting layer 700 can be configured to emit white (W) light. For this purpose, the light-emitting layer 700 may include multiple stacked portions emitting different colors of light. For example, the light-emitting layer 700 may include a first stacked portion emitting blue light, a second stacked portion emitting yellow-green light, and a charge-generating layer CGL disposed between the first and second stacked portions; or it may include a first stacked portion emitting blue light, a second stacked portion emitting green light, a third stacked portion emitting red light, a first charge-generating layer disposed between the first and second stacked portions, and a second charge-generating layer disposed between the second and third stacked portions. Each stacked portion may include a hole transport layer, an organic light-emitting layer, and an electron transport layer deposited in a predetermined order. This configuration of the light-emitting layer 700 can be modified in various ways known in the art.

[0097] The second electrode 800 is formed on the light-emitting layer 700. The second electrode 800 can be used as the cathode of the electroluminescent display device. The second electrode 800 is formed in the same manner as the light-emitting layer 700 in each sub-pixel and in each boundary region between sub-pixels P1, P2 and P3 without being disconnected. That is, the second electrode 800 can even be formed above the embankment 600.

[0098] The second electrode 800 can be composed of a semi-transparent electrode, thus enabling a microcavity effect for each of the sub-pixels P1, P2, and P3. That is, the reflection and re-reflection of light repeat between the second electrode 800, which is a semi-transparent electrode, and the reflective layers 315, 325, and 335, thereby achieving the microcavity effect.

[0099] A sealing layer 850 is formed on the second electrode 800 to prevent external water from penetrating into the light-emitting layer 700. The sealing layer 850 may be made of, but is not limited to, inorganic insulating materials or a deposition structure of alternating inorganic and organic insulating materials.

[0100] A color filter layer 900 is formed on the sealing layer 850. The color filter layer 900 is formed to face the light-emitting regions EA1, EA2, and EA3 in each of the sub-pixels P1, P2, and P3. The color filter layer 900 may include, but is not limited to, a red color filter disposed in the first sub-pixel P1, a green color filter disposed in the second sub-pixel P2, and a blue color filter disposed in the third sub-pixel P3. Although not shown, a black matrix may be additionally formed in the boundaries between the color filter layers 900 to prevent light leakage to areas other than the light-emitting regions EA1, EA2, and EA3.

[0101] Figure 4 This is a cross-sectional view showing an electroluminescent display device according to another embodiment of the present disclosure, and corresponding to... Figure 2 The cross-section of line AB. Besides the additional third conductive layer 339 set in the third sub-pixel P3, Figure 4 Electroluminescent display devices and Figure 3 The electroluminescent display device is the same. Therefore, the same reference numerals are assigned to the same elements, and only the different elements will be described below.

[0102] As from Figure 4 It is noted that the third conductive layer 339 is disposed on the first interlayer dielectric layer 510 of the third sub-pixel P3. The third conductive layer 339 is formed on the same layer as the third upper contact electrode 432 using the same material as the third upper contact electrode 432, and is patterned using the same process as the third upper contact electrode 432.

[0103] The third conductive layer 339 is disposed in the third light-emitting region EA3. The third conductive layer 339 is spaced apart from the third upper contact electrode 432 while being electrically insulated from it. Therefore, the third conductive layer 339 is electrically insulated from the third reflective layer 335 and the first electrode 330. Furthermore, the third conductive layer 339 is electrically insulated from the second conductive layer 337.

[0104] As described above, according to another embodiment of the present disclosure, the third conductive layer 339 is electrically insulated from the third reflective layer 335, the first electrode 330, and the second conductive layer 337. Advantageously, the third conductive layer 339 and the second conductive layer 337 can be used separately as lines or electrodes for various circuit elements disposed in the circuit element layer 200.

[0105] Figure 5 This is a cross-sectional view showing an electroluminescent display device according to another embodiment of the present disclosure, and corresponding to Figure 2 The cross-section of line AB. Besides the fact that the third conductive layer 339, located in the third sub-pixel P3, is electrically connected to the second conductive layer 337. Figure 5 Electroluminescent display devices and Figure 4 The electroluminescent display device is the same. Therefore, the same reference numerals are assigned to the same elements, and only the different elements will be described below.

[0106] As from Figure 5 Note that the third conductive layer 339 is electrically connected to the second conductive layer 337 through the third contact hole CH33 disposed in the first interlayer dielectric layer 510.

[0107] Therefore, according to another embodiment of the present disclosure, since the third conductive layer 339 is electrically connected to the second conductive layer 337, the third conductive layer 339 and the second conductive layer 337 can be used as lines or electrodes of various circuit elements disposed in the circuit element layer 200, thereby improving the conductivity of the lines or electrodes.

[0108] Figure 6 This is a cross-sectional view showing an electroluminescent display device according to another embodiment of the present disclosure, and corresponding to Figure 2 The cross-section of line AB. Besides modifying the second sub-pixel P2, Figure 6 Electroluminescent display devices and Figure 3 The electroluminescent display device is the same. Therefore, the same reference numerals are assigned to the same elements, and only the different elements will be described below.

[0109] As from Figure 6 Note that the second reflective layer 325 and the second central contact electrode 422 are spaced apart from each other on the first interlayer dielectric layer 510 while being electrically insulated from each other.

[0110] The second reflective layer 325 is formed in the second light-emitting region EA2, and the second central contact electrode 422 is formed in the second contact region CA2.

[0111] Reference Figure 6The second contact electrode 420 includes a second lower contact electrode 421, a second center contact electrode 422, and a second upper contact electrode 423. The second lower contact electrode 421 is disposed on the circuit element layer 200 and electrically connected to the driving thin-film transistor T1 disposed in the second sub-pixel P2. The second center contact electrode 422 is disposed on the first interlayer dielectric layer 510 and connected to the second lower contact electrode 421 through a first contact hole CH21 disposed in the second sub-pixel P2 of the first interlayer dielectric layer 510. The second upper contact electrode 423 is disposed on the second interlayer dielectric layer 520 and connected to the second center contact electrode 422 through a second contact hole CH22 disposed in the second sub-pixel P2 of the second interlayer dielectric layer 520.

[0112] The second reflective layer 325 is electrically insulated from the second contact electrode 420 and the first electrode 320. Additionally, the second reflective layer 325 is electrically insulated from the first conductive layer 327.

[0113] As described above, according to another embodiment of the present disclosure, the second reflective layer 325 is electrically insulated from the second contact electrode 420, the first electrode 320 and the first conductive layer 327, thereby advantageously allowing the second reflective layer 325 and the first conductive layer 327 to be used separately as lines or electrodes for various circuit elements disposed in the circuit element layer 200.

[0114] Figure 7 This is a cross-sectional view showing an electroluminescent display device according to another embodiment of the present disclosure, and corresponding to Figure 2 The cross-section of line AB. Besides the second reflective layer 325, which is electrically connected to the first conductive layer 327 in the second sub-pixel P2. Figure 7 Electroluminescent display devices and Figure 6 The electroluminescent display device is the same. Therefore, the same reference numerals are assigned to the same elements, and only the different elements will be described below.

[0115] As from Figure 7 Note that the second reflective layer 325 is electrically connected to the first conductive layer 327 through a third contact hole CH23 disposed in the first interlayer dielectric layer 510.

[0116] Therefore, according to another embodiment of the present disclosure, since the second reflective layer 325 is electrically connected to the first conductive layer 327, the second reflective layer 325 and the first conductive layer 327 can be used as lines or electrodes of various circuit elements disposed in the circuit element layer 200, thereby improving the conductivity of the lines or electrodes.

[0117] Although not shown in detail, this disclosure includes the following structure: wherein Figure 4 or Figure 5The third conductive layer 339 is applied to Figure 6 or Figure 7 The structure.

[0118] Figure 8 This is a cross-sectional view showing the circuit element layer 200 of the first sub-pixel P1 of an electroluminescent display device according to another embodiment of the present disclosure.

[0119] As from Figure 8 It is noted that the circuit element layer 200 is disposed on the substrate 100, and the first electrode 310, the first contact electrode 410, the first reflective layer 315, and the interlayer dielectric layers 510 and 520 are disposed on the circuit element layer 200.

[0120] The substrate 100 may be made of semiconductor material.

[0121] Because it is configured with Figures 3 to 7 The same first electrode 310, first contact electrode 410, reflective layer 315, and interlayer dielectric layers 510 and 520 are used, so their repeated description will be omitted.

[0122] The circuit element layer 200 includes a driving thin-film transistor T1, a sensing thin-film transistor T2, a scan line SCAN, a data line DATA, a sensing line SENSE, a high-voltage power line VDD, and a capacitor C.

[0123] The driving thin-film transistor T1 includes a source electrode S1, a drain electrode D1, and a gate electrode G1. The source electrode S1 and the drain electrode D1 are disposed in a substrate 100 made of semiconductor material, and the gate electrode G1 is spaced apart from the source electrode S1 and the drain electrode D1 by inserting a first insulating layer 210 therebetween.

[0124] The sensing thin-film transistor T2 includes a source electrode S2, a drain electrode D2, and a gate electrode G2. The source electrode S2 and the drain electrode D2 are disposed in a substrate 100 made of semiconductor material, and the gate electrode G2 is spaced apart from the source electrode S2 and the drain electrode D2 by inserting a first insulating layer 210 therebetween.

[0125] Although not shown, the switching thin-film transistor can be configured with the same structure as the driving thin-film transistor T1 or the sensing thin-film transistor T2.

[0126] A second insulating layer 220 is formed on the first insulating layer 210 and the gate electrodes G1 and G2. Scan lines SCAN and multiple first interconnect layers M11, M12, M13, and M14 are formed on the second insulating layer 220. Furthermore, multiple first vias V11, V12, V13, V14, V15, and V16 are formed in either the second insulating layer 220 or the first insulating layer 210 and the second insulating layer 220.

[0127] Specifically, a first connection layer M11 is electrically connected to the drain electrode D1 of the driving thin-film transistor T1 through a first via V11 passing through the first insulating layer 210 and the second insulating layer 220, and another first connection layer M12 is electrically connected to the gate electrode G1 of the driving thin-film transistor T1 through a first via V12 passing through the second insulating layer 220. Yet another first connection layer M13 is electrically connected to the source electrode S1 of the driving thin-film transistor T1 and the drain electrode D2 of the sensing thin-film transistor T2 through first vias V13 and V14 passing through the first insulating layers 210 and 220. The scan line SCAN is electrically connected to the gate electrode G2 of the sensing thin-film transistor T2 through a first via V15 passing through the second insulating layer 220. Yet another first connection layer M14 is electrically connected to the source electrode S2 of the sensing thin-film transistor T2 through a first via V16 passing through the first insulating layers 210 and 220.

[0128] A third insulating layer 230 is formed on the second insulating layer 220, the scan line SCAN, and a plurality of first connection layers M11, M12, M13, and M14. Furthermore, the data line DATA and a plurality of second connection layers M21, M22, M23, and M24 are formed on the third insulating layer 230. In addition, a plurality of second vias V21, V22, V23, V24, and V25 are formed in the third insulating layer 230.

[0129] Specifically, a second connection layer M21 is electrically connected to the first connection layer M11 through a second through-hole V21 passing through the third insulating layer 230; another second connection layer M22 is electrically connected to the first connection layer M12 through a second through-hole V22 passing through the third insulating layer 230; and yet another second connection layer M23 is electrically connected to the first connection layer M13 through second through-holes V23 and V24 passing through the third insulating layer 230. The data line DATA is electrically connected to the source electrode of the switching thin-film transistor through a first through-hole, the first connection layer, and a second through-hole (not shown). Another second connection layer M24 is electrically connected to the first connection layer M14 through a second through-hole V25 passing through the third insulating layer 230.

[0130] A fourth insulating layer 240 is formed on the third insulating layer 230, the data line DATA, and multiple second connection layers M21, M22, M23, and M24. Furthermore, a sensing line SENSE and multiple third connection layers M31, M32, and M33 are formed on the fourth insulating layer 240. Additionally, multiple third vias V31, V32, V33, V34, and V35 are formed in the fourth insulating layer 240.

[0131] Specifically, a third connecting layer M31 is electrically connected to the second connecting layer M21 through a third through-hole V31 passing through the fourth insulating layer 240; another third connecting layer M32 is electrically connected to the second connecting layer M22 through a third through-hole V32 passing through the fourth insulating layer 240; and yet another third connecting layer M33 is electrically connected to the second connecting layer M23 through third through-holes V33 and V34 passing through the fourth insulating layer 240. The sensing line SENSE is electrically connected to another second connecting layer M24 through a third through-hole V35 passing through the fourth insulating layer 240.

[0132] A fifth insulating layer 250 is formed on the fourth insulating layer 240, the sensing line SENSE, and a plurality of third connecting layers M31, M32, and M33. Furthermore, the second capacitor electrode C2 of the capacitor C and a plurality of fourth connecting layers M41 and M42 are formed on the fifth insulating layer 250. In addition, a plurality of fourth vias V41, V42, and V43 are formed in the fifth insulating layer 250.

[0133] Specifically, a fourth connecting layer M41 is electrically connected to the third connecting layer M31 through a fourth through-hole V41 passing through the fifth insulating layer 250. The second capacitor electrode C2 is electrically connected to another third connecting layer M32 through a fourth through-hole V42 passing through the fifth insulating layer 250. Another fourth connecting layer M42 is electrically connected to the third connecting layer M33 through a fourth through-hole V43 passing through the fifth insulating layer 250.

[0134] A sixth insulating layer 260 is formed on the fifth insulating layer 250, the second capacitor electrode C2, and a plurality of fourth connecting layers M41 and M42. Furthermore, the first capacitor electrode C1 of the capacitor C is formed on the sixth insulating layer 260. The first capacitor electrode C1 faces the second capacitor electrode C2 by inserting the sixth insulating layer 260 therebetween. Preferably, the sixth insulating layer 260 is thin to increase the capacitance of the capacitor C. Therefore, the sixth insulating layer 260 can be formed thinner than the other insulating layers 210, 220, 230, 240, 250, 270, and 280.

[0135] A seventh insulating layer 270 is formed on the sixth insulating layer 260 and the first capacitor electrode C1. Furthermore, a high-voltage power line VDD and a link electrode LE are formed on the seventh insulating layer 270. Additionally, a plurality of fifth through-holes V51, V52, and V53 are formed in the seventh insulating layer 270 or in both the sixth and seventh insulating layers 260.

[0136] In detail, the high-voltage power line VDD is electrically connected to the fourth connection layer M41 through a fifth through-hole V51 passing through the sixth insulating layer 260 and the seventh insulating layer 270. The link electrode LE is electrically connected to the first capacitor electrode C1 through a fifth through-hole V52 passing through the seventh insulating layer 270. Additionally, the link electrode LE is electrically connected to the fourth connection layer M42 through a fifth through-hole V53 passing through the sixth insulating layer 260 and the seventh insulating layer 270.

[0137] An eighth insulating layer 280 is formed on the seventh insulating layer 270, the high-voltage power line VDD, and the link electrode LE. Furthermore, a first lower contact electrode 411 and a first reflective layer 315 are formed on the eighth insulating layer 280. Additionally, a plurality of sixth vias V61 and V62 are formed in the eighth insulating layer 280.

[0138] The first lower contact electrode 411 is electrically connected to the link electrode LE through the sixth through-hole V62 passing through the eighth insulating layer 280. The first reflective layer 315 is electrically connected to the high-voltage power line VDD through the sixth through-hole V61 passing through the eighth insulating layer 280.

[0139] Therefore, the first lower contact electrode 411 is electrically connected to each of the source electrode S1 of the driving thin film transistor T1 and the drain electrode D2 of the sensing thin film transistor T2 by passing through the link electrode LE, the fourth connection layer M42, the third connection layer M33, the second connection layer M23 and the first connection layer M13 arranged below the first lower contact electrode 411 in a predetermined order.

[0140] In addition, the first reflective layer 315 is electrically connected to the drain electrode D1 of the driving thin film transistor T1 by passing through the high voltage power line VDD, the fourth connection layer M41, the third connection layer M31, the second connection layer M21 and the first connection layer M11 arranged below the first reflective layer 315 in a predetermined order.

[0141] In addition, the first capacitor electrode C1 is electrically connected to each of the source electrode S1 of the driving thin film transistor T1 and the drain electrode D2 of the sensing thin film transistor T2 by passing through the link electrode LE arranged above the first capacitor electrode C1 in a predetermined order, and then through the fourth connection layer M42, the third connection layer M33, the second connection layer M23 and the first connection layer M13 arranged below the first capacitor electrode C1.

[0142] In addition, the second capacitor electrode C2 is electrically connected to the gate electrode G1 of the driving thin film transistor T1 by passing through the third connection layer M32, the second connection layer M22 and the first connection layer M12 arranged below the second capacitor electrode C2 in a predetermined order.

[0143] Furthermore, the sensing line SENSE is electrically connected to the source electrode S2 of the sensing thin film transistor T2 by passing through the second connection layer M24 and the first connection layer M14 arranged below the sensing line SENSE in a predetermined order.

[0144] According to another embodiment of this disclosure, the first reflective layer 315 is electrically connected to the high-voltage power line VDD, thereby allowing the first reflective layer 315 to be used as an auxiliary line for the high-voltage power line VDD. Depending on the circumstances, the first reflective layer 315 may be used as a main high-voltage power line.

[0145] Furthermore, according to another embodiment of this disclosure, since the scan line SCAN, data line DATA, sensing line SENSE, and high-voltage power line VDD are formed on their respective, different layers, the size of multiple sub-pixels P1, P2, and P3 can be reduced, thereby enabling a high-resolution display. Specifically, although the data line DATA can be positioned above the scan line SCAN, the sensing line SENSE can be positioned above the data line DATA, and the high-voltage power line VDD can be positioned above the sensing line SENSE, these lines are not limited to these configurations.

[0146] Additionally, the first capacitor electrode C1 and the second capacitor electrode C2 can be formed on a different layer than the scan line SCAN, data line DATA, sensing line SENSE, and high-voltage power line VDD. However, depending on the circumstances, at least two of the scan line SCAN, data line DATA, sensing line SENSE, first capacitor electrode C1, second capacitor electrode C2, and high-voltage power line VDD can be formed on the same layer.

[0147] Although not shown in detail, the circuit element layer 200 can be equivalently applied to Figures 3 to 7 The second sub-pixel P2 and the third sub-pixel P3.

[0148] In this case, with the second sub-pixel P2, the second lower contact electrode 421 is electrically connected to each of the source electrode S1 of the driving thin film transistor T1 and the drain electrode D2 of the sensing thin film transistor T2 by passing through the link electrode LE, the fourth connection layer M42, the third connection layer M33, the second connection layer M23 and the first connection layer M13 in a predetermined order, and the first conductive layer 327 is electrically connected to the drain electrode D1 of the driving thin film transistor T1 by passing through the high voltage power line VDD, the fourth connection layer M41, the third connection layer M31, the second connection layer M21 and the first connection layer M11 in a predetermined order.

[0149] In the case of the third sub-pixel P3, the third lower contact electrode 431 is electrically connected to each of the source electrode S1 of the driving thin film transistor T1 and the drain electrode D2 of the sensing thin film transistor T2 by passing through the link electrode LE, the fourth connection layer M42, the third connection layer M33, the second connection layer M23 and the first connection layer M13 in a predetermined order, and the second conductive layer 337 is electrically connected to the drain electrode D1 of the driving thin film transistor T1 by passing through the high voltage power line VDD, the fourth connection layer M41, the third connection layer M31, the second connection layer M21 and the first connection layer M11 in a predetermined order.

[0150] Figure 9 This is a cross-sectional view showing the circuit element layer 200 of the first sub-pixel P1 of an electroluminescent display device according to another embodiment of the present disclosure. Figure 9 Electroluminescent display devices and Figure 8 The difference in the electroluminescent display device is that the linking electrode LE and the eighth insulating layer 280 are omitted. Therefore, the same reference numerals are given to the same elements, and only the different elements will be described below.

[0151] Reference Figure 8 The high-voltage power line VDD and the link electrode LE are formed on the seventh insulating layer 270, the eighth insulating layer 280 is formed on the high-voltage power line VDD and the link electrode LE, and the first lower contact electrode 411 and the first reflective layer 315 are formed on the eighth insulating layer 280.

[0152] In comparison, reference Figure 9 A first lower contact electrode 411 and a first reflective layer 315 are formed on a seventh insulating layer 270. Therefore, the first lower contact electrode 411 is electrically connected to each of the source electrode S1 of the driving thin-film transistor T1 and the drain electrode D2 of the sensing thin-film transistor T2 by passing through the fourth connection layer M42, the third connection layer M33, the second connection layer M23, and the first connection layer M13 arranged below the first lower contact electrode 411 in a predetermined order. Additionally, the first capacitor electrode C1 is electrically connected to each of the source electrode S1 of the driving thin-film transistor T1 and the drain electrode D2 of the sensing thin-film transistor T2 by passing through the first lower contact electrode 411 arranged above the first capacitor electrode C1 in a predetermined order, and then through the fourth connection layer M42, the third connection layer M33, the second connection layer M23, and the first connection layer M13 arranged below the first capacitor electrode C1.

[0153] Therefore, the upper surface of the first capacitor electrode C1 contacts the lower surface of the fifth through hole V52 disposed in the seventh insulating layer 270, and the lower surface of the first lower contact electrode 411 contacts the upper surface of the fifth through hole V52 disposed in the seventh insulating layer 270.

[0154] Additionally, refer to Figure 9 The high-voltage power line VDD is disposed on the same layer as the second capacitor electrode C2 on the fifth insulating layer 250, and the first reflective layer 315 is electrically connected to the high-voltage power line VDD disposed below it through the fifth through hole V51 disposed in the seventh insulating layer 270 and the sixth insulating layer 260.

[0155] Therefore, the first reflective layer 315 is electrically connected to the drain electrode D1 of the driving thin film transistor T1 by passing through the high voltage power line VDD, the third connection layer M31, the second connection layer M21 and the first connection layer M11 in a predetermined order.

[0156] In this way, because in Figure 9 In the implementation, the link electrode LE and the eighth insulating layer 280 are omitted, therefore... Figure 8 Compared to the previous implementation, it is advantageous to reduce the number of thin film deposition processes and the number of patterning processes using masks.

[0157] Figure 10 This is a plan view illustrating an electroluminescent display device according to another embodiment of the present disclosure. Figure 10 Electroluminescent display devices and Figure 2 The difference in the electroluminescent display device is that a groove T is additionally provided in each boundary between the plurality of sub-pixels P1, P2, and P3. Therefore, the same reference numerals are given to the same elements, and only the different elements will be described below.

[0158] As from Figure 10 It is noted that a trench T is formed in each boundary region between the multiple sub-pixels P1, P2, and P3. In this way, according to another embodiment of this disclosure, due to the presence of the trench T, a current path is formed longitudinally between adjacent sub-pixels P1, P2, and P3, thereby reducing leakage current between adjacent sub-pixels P1, P2, and P3. This will be described in more detail using cross-sectional structures.

[0159] Figure 11 It is shown Figure 10 A cross-sectional view of one embodiment of line AB. Figure 11 Electroluminescent display devices and Figure 3 The difference in the electroluminescent display device lies in the additional provision of trench T in the embankment 600 and the second interlayer dielectric layer 520 below the embankment 600. Therefore, the same reference numerals are assigned to the same elements, and only the different elements will be described below. Although not shown in detail, trench T will also be used in this disclosure. Figures 4 to 9 The structure.

[0160] As from Figure 11 It is noted that trenches T are formed in the embankment 600 and the second interlayer dielectric layer 520 in each boundary region between multiple sub-pixels P1, P2 and P3.

[0161] In this manner, according to another embodiment of the present disclosure, since a trench T is formed in the embankment 600 and the second interlayer dielectric layer 520, the light-emitting layer 700 can be formed in the trench T. Therefore, a long current path can be formed between adjacent sub-pixels P1, P2, and P3, thereby reducing leakage current between adjacent sub-pixels P1, P2, and P3. That is, when the spacing between sub-pixels P1, P2, and P3 is compact to achieve high resolution, when the light-emitting layer 700 in any of the sub-pixels P1, P2, and P3 emits light, the charge in the corresponding light-emitting layer 700 can move to the light-emitting layer 700 in another adjacent sub-pixel of P1, P2, and P3, which may result in leakage current.

[0162] Therefore, in another embodiment of this disclosure, since a trench T is formed in each boundary region between multiple sub-pixels P1, P2 and P3, and a light-emitting layer 700 is formed in the trench T, a long current path is formed longitudinally between adjacent sub-pixels P1, P2 and P3 to increase resistance, thereby reducing the occurrence of leakage current.

[0163] The trench T may be formed only in the embankment 600. Alternatively, the trench T may extend into the interior of the first interlayer dielectric layer 510, or into the interior of the second interlayer dielectric layer 520, or into the interior of the circuit element layer 200.

[0164] Reference Figure 11 The enlarged view shows that the light-emitting layer 700 may include: a first stacked portion 710 that emits light of a first color; a second stacked portion 730 that emits light of a second color; and a charge-generating layer 720 disposed between the first stacked portion 710 and the second stacked portion 730.

[0165] The first stacked portion 710 can be formed on one side of the trench T or on the lower surface of the trench T. In this case, the portion of the first stacked portion 710 formed on one side of the trench T and the portion of the first stacked portion 710 formed on the lower surface of the trench T are disconnected from each other and not connected. Therefore, the portion of the first stacked portion 710 formed on one side of the trench T, such as the left side, and the portion of the first stacked portion 710 formed on the other side of the trench T, such as the right side, are disconnected from each other and not connected. As a result, charge cannot move through the first stacked portion 710 between the sub-pixels P1, P2, and P3 arranged to be adjacent to each other by being inserted into the trench T.

[0166] Additionally, the charge generation layer 720 can be formed on one side of the trench T within the first stack 710. In this case, the portion of the charge generation layer 720 formed on one side (e.g., the left side) of the trench T and the portion formed on the other side (e.g., the right side) of the trench T are disconnected from each other and not connected. Therefore, charge cannot move through the charge generation layer 720 between the sub-pixels P1, P2, and P3, which are arranged to be adjacent to each other by being inserted into the trench T.

[0167] Furthermore, the second stack portion 730 can be continuously disposed on the charge generation layer 720 between the sub-pixels P1, P2, and P3 arranged adjacent to each other via the insertion trench T. Therefore, charge can move between the sub-pixels P1, P2, and P3 arranged adjacent to each other via the insertion trench T through the second stack portion 730. However, this is not a limitation; the second stack portion 730 can be configured to be discontinuously disposed between the sub-pixels P1, P2, and P3 arranged adjacent to each other via the insertion trench T by appropriately controlling the shape of the trench T and the deposition process of the light-emitting layer 700. Specifically, some lower portions of the second stack portion 730 adjacent to the charge generation layer 720 can be disconnected from each other between the sub-pixels P1, P2, and P3.

[0168] The conductivity of the charge generation layer 720 is greater than that of the first stacked portion 710 and the second stacked portion 730. Specifically, since the N-type charge generation layer constituting the charge generation layer 720 may comprise a metallic material, the conductivity of the N-type charge generation layer is greater than that of the first stacked portion 710 and the second stacked portion 730. Therefore, charge primarily moves between the sub-pixels P1, P2, and P3 arranged adjacent to each other through the charge generation layer 720, and the amount of charge moving through the second stacked portion 730 is negligible.

[0169] According to another embodiment of this disclosure, when the light-emitting layer 700 is formed in the trench T, the light-emitting layer 700 is configured to be partially disconnected in the trench T. In particular, the first stack portion 710 and the charge-generating layer 720 are configured to be disconnected, thereby preventing leakage current from occurring between adjacent sub-pixels P1, P2, and P3.

[0170] Figures 12A to 12C The present disclosure relates to an electroluminescent display device according to another embodiment of the present disclosure, and to a head-mounted display (HMD) device. Figure 12A It is a schematic perspective view. Figure 12B It is a schematic floor plan of a virtual reality (VR) structure, and Figure 12C This is a schematic cross-sectional view of an augmented reality (AR) structure.

[0171] like Figure 12AAs shown, an HMD device according to this disclosure may include a housing 10 and a headband 30.

[0172] The housing 10 can accommodate components such as display devices, lens arrays, and eyepiece lenses.

[0173] The headband 30 can be secured to the housing 10. The headband 30 is shown as being configured to surround the upper surface of both side surfaces of the user, but is not limited thereto. The headband 30 can secure the HMD device to the user's head and can be replaced by an eyeglass frame structure or a helmet structure.

[0174] like Figure 12B As shown, an HMD device with a VR structure according to this disclosure may include a left-eye display device 12, a right-eye display device 11, a lens array 13, a left-eye eyepiece lens 20a, and a right-eye eyepiece lens 20b.

[0175] The left eye display device 12, the right eye display device 11, the lens array 13, the left eye eyepiece lens 20a and the right eye eyepiece lens 20b can be housed in the housing 10.

[0176] The left-eye display device 12 and the right-eye display device 11 can display the same image, and in this case, the user can view a two-dimensional (2D) image. Alternatively, the left-eye display device 12 can display a left-eye image, and the right-eye display device 11 can display a right-eye image. Each of the left-eye display device 12 and the right-eye display device 11 can be configured as an electroluminescent display device as described above. In this case, the upper portion (e.g., color filter layer 900) corresponding to the surface displaying the image can face the lens array 13.

[0177] Lens array 13 can be spaced apart from each of the left eyepiece lens 20a and the left eye display device 12, and can be disposed between the left eyepiece lens 20a and the left eye display device 12. That is, lens array 13 can be disposed in front of the left eyepiece lens 20a and behind the left eye display device 12. Similarly, lens array 13 can be spaced apart from each of the right eyepiece lens 20b and the right eye display device 11, and can be disposed between the right eyepiece lens 20b and the right eye display device 11. That is, lens array 13 can be disposed in front of the right eyepiece lens 20b and behind the right eye display device 11.

[0178] Lens array 13 can be a microlens array. Lens array 13 can be replaced by a pinhole array. By using lens array 13, the image displayed by the left eye display device 12 or the right eye display device 11 can be magnified by a certain magnification, so that the user can see a magnified image.

[0179] The user's left eye (LE) can be located at the left eyepiece lens 20a, and the user's right eye (RE) can be located at the right eyepiece lens 20b.

[0180] like Figure 12C As shown, an HMD device with an AR structure according to this disclosure may include a left-eye display device 12, a lens array 13, a left-eye eyepiece lens 20a, a transmissive reflective portion 14, and a transmissive window 15. Figure 12C For convenience, only the left eye element is shown in the diagram, and the right eye element may be the same as the left eye element.

[0181] The left eye display device 12, lens array 13, left eye eyepiece lens 20a, transmission and reflection section 14 and transmission window 15 can be housed in the housing 10.

[0182] The left-eye display device 12 can be positioned on one side (e.g., above) of the transmission-reflection section 14 without covering the transmission window 15. Therefore, the left-eye display device 12 can provide an image to the transmission-reflection section 14 without obscuring the external background seen through the transmission window 15.

[0183] The left eye display device 12 can be configured as an electroluminescent display device as described above. In this case, the upper part (e.g., the color filter layer 900) corresponding to the surface of the displayed image can face the transmissive reflective part 14.

[0184] The lens array 13 can be disposed between the left eyepiece lens 20a and the transmission and reflection section 14.

[0185] The user's left eye can be positioned at the left eyepiece lens 20a.

[0186] A transmissive reflective element 14 can be disposed between the lens array 13 and the transmissive window 15. The transmissive reflective element 14 may include a reflective surface 14a that transmits a portion of light and reflects another portion. The reflective surface 14a can be configured such that the image displayed by the left-eye display device 12 travels to the lens array 13. Therefore, the user can see all the external background and the image displayed by the left-eye display device 12 through the transmissive window 15. That is, the user can see an image that includes both a real background and a virtual image, thus enabling AR (Augmented Reality).

[0187] The transmission window 15 can be positioned in front of the transmission and reflection section 14.

[0188] According to one embodiment of this disclosure, since a first contact electrode is provided in a first sub-pixel, a second contact electrode is provided in a second sub-pixel, and a third contact electrode is provided in a third sub-pixel, a microcavity can be easily realized in each sub-pixel through the first to third contact electrodes.

[0189] According to one embodiment of this disclosure, since the first reflective layer is patterned to be insulated from the first electrode within the first sub-pixel, it is advantageous that the first reflective layer can be used as a line or electrode for various circuit elements disposed in the circuit element layer.

[0190] According to one embodiment of this disclosure, since the first and second conductive layers are patterned to be insulated from the first electrodes within the second and third sub-pixels, it is advantageous that the conductive layers can be used as lines or electrodes for various circuit elements disposed in the circuit element layer.

[0191] According to another embodiment of this disclosure, since the third conductive layer is patterned to be insulated from the first electrode within the third sub-pixel, it is advantageous that the third conductive layer and the second conductive layer can be used as lines or electrodes for various circuit elements disposed in the circuit element layer.

[0192] According to another embodiment of this disclosure, since the second reflective layer is patterned to be insulated from the first electrode within the second sub-pixel, it is advantageous that the second reflective layer can be used as a line or electrode for various circuit elements disposed in the circuit element layer.

[0193] According to another embodiment of this disclosure, since the scan lines, data lines, sensing lines, and high-voltage power lines VDD are formed on their respective layers that are different from each other, the size of multiple sub-pixels can be reduced, thereby enabling a high-resolution display.

[0194] It will be apparent to those skilled in the art that the present disclosure is not limited to the above-described embodiments and drawings, and that various substitutions, modifications, and variations can be made to the present disclosure without departing from its spirit or scope. Therefore, the scope of the present disclosure is defined by the appended claims, and all variations or modifications intended to be derived from the meaning, scope, and equivalent concepts of the claims fall within the scope of the present disclosure.

[0195] The various embodiments described above can be combined to provide other embodiments. All patents, applications, and publications mentioned in this specification and / or listed in the application data sheets are incorporated herein by reference in their entirety. If it is necessary to employ the concepts of various patents, applications, and publications to provide other embodiments, aspects of the embodiments can be modified.

[0196] These and other changes can be made to the embodiments based on the detailed description above. In general, the terminology used in the claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of equivalents conferred by such claims.

Claims

1. An electroluminescent display device, comprising: A substrate, wherein the substrate is provided with a first sub-pixel, a second sub-pixel and a third sub-pixel; A circuit element layer disposed on the substrate, the circuit element layer including driving thin film transistors disposed in each of the first to the third sub-pixels; A reflective layer is disposed above the circuit element layer and includes a first reflective layer disposed in the first sub-pixel, a second reflective layer disposed in the second sub-pixel, and a third reflective layer disposed in the third sub-pixel. A first electrode is disposed in each of the first sub-pixel, the second sub-pixel, and the third sub-pixel and is disposed above the reflective layer. The first electrode in each sub-pixel is electrically connected to the driving thin-film transistor in that sub-pixel via a contact electrode. A first conductive layer disposed below the second reflective layer in the second sub-pixel; A light-emitting layer is disposed on the first electrode; as well as The second electrode is disposed on the light-emitting layer. Wherein, the first electrode of the first sub-pixel is electrically connected to the driving thin-film transistor of the first sub-pixel through a first contact electrode, and the first reflective layer is electrically insulated from the first electrode and the first contact electrode of the first sub-pixel. The first conductive layer is made of the same material as the first reflective layer on the same layer as the first reflective layer and is electrically insulated from the first electrode of the second sub-pixel.

2. The electroluminescent display device according to claim 1, wherein At least one of the first reflective layer and the second reflective layer is electrically connected to a line or electrode disposed in the circuit element layer.

3. The electroluminescent display device according to claim 1, wherein The first contact electrode includes a first lower contact electrode connected to the driving thin film transistor of the first sub-pixel, a first upper contact electrode connected to the first electrode of the first sub-pixel, and a first center contact electrode connecting the first lower contact electrode and the first upper contact electrode between the first lower contact electrode and the first upper contact electrode, and the first reflective layer is made of the same material as the first lower contact electrode on the same layer as the first lower contact electrode and is spaced apart from the first lower contact electrode.

4. The electroluminescent display device according to claim 1, wherein The second reflective layer is disposed between the first conductive layer and the first electrode of the second sub-pixel, and is electrically connected to the first electrode of the second sub-pixel.

5. The electroluminescent display device according to claim 1, wherein The second reflective layer is disposed between the first conductive layer and the first electrode of the second sub-pixel, is electrically insulated from the first electrode of the second sub-pixel, and is electrically connected to the first conductive layer.

6. The electroluminescent display device according to claim 1, wherein The second reflective layer is disposed between the first conductive layer and the first electrode of the second sub-pixel, and is electrically insulated from the first electrode of the second sub-pixel and from the first conductive layer.

7. The electroluminescent display apparatus according to claim 1, further comprising a second conductive layer provided below the third reflective layer in the third sub-pixel, wherein, The second conductive layer is made of the same material as the first reflective layer on the same layer as the first reflective layer and is electrically insulated from the first electrode of the third sub-pixel.

8. The electroluminescent display device according to claim 7, wherein, The third reflective layer is disposed between the second conductive layer and the first electrode of the third sub-pixel, and is electrically connected to the first electrode of the third sub-pixel.

9. The electroluminescent display device according to claim 7, further comprising a third conductive layer, wherein the third conductive layer is disposed in the third sub-pixel between the second conductive layer and the third reflective layer, wherein, The third conductive layer is made of the same material as the second reflective layer on the same layer as the second reflective layer and is electrically insulated from the second conductive layer, the third reflective layer and the first electrode of the third sub-pixel.

10. The electroluminescent display device according to claim 7, further comprising a third conductive layer, wherein the third conductive layer is disposed in the third sub-pixel between the second conductive layer and the third reflective layer, wherein, The third conductive layer is made of the same material as the second reflective layer on the same layer as the second reflective layer and is electrically connected to the second conductive layer.

11. The electroluminescent display device according to claim 1, wherein, The circuit element layer includes a first capacitor electrode and a high-voltage power line disposed in the first sub-pixel, the first contact electrode is electrically connected to the first capacitor electrode, and the first reflective layer is electrically connected to the high-voltage power line.

12. The electroluminescent display device according to claim 1, wherein, The circuit element layer also includes a switching thin-film transistor, a sensing thin-film transistor, a data line electrically connected to the source electrode of the switching thin-film transistor, a scan line electrically connected to the gate electrode of the sensing thin-film transistor, a sensing line electrically connected to the source electrode of the sensing thin-film transistor, and a high-voltage power line electrically connected to the drain electrode of the driving thin-film transistor, wherein the data line, the scan line, the sensing line and the high-voltage power line are disposed on different layers from each other.

13. The electroluminescent display device according to claim 1, further comprising a dam covering the end of the first electrode, wherein, The embankment has a groove in each boundary region between the first sub-pixel and the third sub-pixel, and a portion of the light-emitting layer is interrupted in the groove and another portion of the light-emitting layer is continuous in the groove.

14. An electroluminescent display device, comprising: First to third sub-pixels, each of the first to third sub-pixels includes a contact area and a light-emitting area, each sub-pixel is provided with a first electrode, the first electrode extends from the light-emitting area of ​​each sub-pixel to the contact area; A first reflective layer is disposed in the light-emitting region of the first sub-pixel and is electrically insulated from the first electrode of the first sub-pixel; A second reflective layer is disposed at least in the light-emitting region of the second sub-pixel; A third reflective layer is disposed at least in the light-emitting region of the third sub-pixel; as well as A first conductive layer is disposed in the light-emitting region of the second sub-pixel and below the second reflective layer. The first reflective layer and the first conductive layer are made of the same material on the same layer.

15. The electroluminescent display device according to claim 14, further comprising: A second conductive layer is disposed in the light-emitting region of the third sub-pixel and below the third reflective layer. The first reflective layer, the first conductive layer, and the second conductive layer are made of the same material on the same layer.

16. The electroluminescent display device according to claim 15, further comprising: The first lower contact electrode is disposed in the contact area of ​​the first sub-pixel; The second lower contact electrode is disposed in the contact area of ​​the second sub-pixel; And a third lower contact electrode, disposed in the contact area of ​​the third sub-pixel. The first lower contact electrode is electrically connected to the first electrode of the first sub-pixel and electrically insulated from the first reflective layer; the second lower contact electrode is electrically connected to the first electrode of the second sub-pixel and electrically insulated from the first conductive layer; the third lower contact electrode is electrically connected to the first electrode of the third sub-pixel and electrically insulated from the second conductive layer; and the first lower contact electrode, the second lower contact electrode, and the third lower contact electrode are made of the same material as the first reflective layer on the same layer as the first reflective layer.

17. The electroluminescent display device according to claim 15, further comprising a third conductive layer disposed in the light-emitting region of the third sub-pixel and between the third reflective layer and the second conductive layer. in, The third conductive layer is made of the same material as the second reflective layer on the same layer as the second reflective layer and is electrically insulated from the first electrode of the third sub-pixel.

18. The electroluminescent display device according to claim 17, wherein, At least one of the first conductive layer, the second conductive layer, and the third conductive layer is electrically connected to a line or electrode disposed in the circuit element layer.

19. The electroluminescent display device according to claim 14, further comprising a dam covering the end of the first electrode, wherein, The embankment has a groove in each boundary region between the first sub-pixel and the third sub-pixel, and a portion of the light-emitting layer disposed above the first electrode is interrupted in the groove and another portion of the light-emitting layer is continuous in the groove.

20. A head-mounted display device, comprising: At least one electroluminescent display device according to any one of claims 1 to 19, A lens array arranged at a distance from the at least one electroluminescent display device; as well as A housing housing that accommodates the at least one electroluminescent display device and the lens array.

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