用于制造集成电路的激光辅助外延和蚀刻
By using laser-assisted heating technology on wafers, the problem of thickness non-uniformity in epitaxial and etching processes has been solved, enabling uniform control of wafer surface temperature and thickness, and improving the yield of the manufacturing process.
CN114566444BActive Publication Date: 2026-07-17TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-01-20
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
When performing epitaxial and etching processes on wafers, thickness inhomogeneity issues exist, affecting the yield of the manufacturing process.
Method used
Laser-assisted heating technology is used to rotate the wafer and project laser beams onto the wafer using multiple laser projectors. By adjusting the angle and position of the laser beams and combining them with a lamp heating source, precise heating of different areas on the wafer surface can be achieved to control the uniformity of epitaxial and etching processes.
Benefits of technology
This improves the uniformity of wafer surface temperature, ensures the uniformity of semiconductor layer thickness, and enhances the yield of the manufacturing process.
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Figure CN114566444B_ABST
Abstract
本公开涉及用于制造集成电路的激光辅助外延和蚀刻。一种方法包括：将晶圆置于生产室中；提供加热源以加热晶圆；使用激光投影仪将激光束投射到晶圆上。该方法还包括：当晶圆被加热源和激光束两者加热时，执行从外延工艺中选择的工艺以在晶圆上生长半导体层，并且执行蚀刻工艺以蚀刻半导体层。
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