Semiconductor substrate support

Abstract

The present application relates to semiconductor substrate support. A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more heat sinks. Each heat sink is a radial notch intersecting at least one of the top surface and a bottom surface of the cylindrical puck. The radial notch has a heat sink depth extending through at least half of the puck thickness and a heat sink radius that is at least half of the puck radius. A method of processing a wafer includes the steps of processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process.

Claims

1. A semiconductor substrate support, comprising: The positioning disk is essentially cylindrical, characterized by a cylindrical shaft, the radius of the positioning disk surrounding the cylindrical shaft, and the thickness of the positioning disk. The radius of the positioning disk is at least four times the thickness of the positioning disk. The positioning disk is wherein at least its top surface is substantially planar, and The positioning disk defines one or more radial heat insulators. Each heat exchanger is characterized as a radial notch, which intersects with the top surface, wherein each radial notch is characterized as follows: The thermal breaker depth extends from the top surface of the positioning disk through at least half the thickness of the positioning disk; and The radius of the heat exchanger is symmetrically arranged around the cylindrical shaft and is at least half the radius of the positioning disk. At least three lifting components are disposed in the one or more radial heat exchangers.

2. The semiconductor substrate support of claim 1, wherein the positioning disk further defines at least one radial thermal interrupter, the at least one radial thermal interrupter being characterized as a radial recess intersecting only the bottom surface of the positioning disk, wherein no lifting member is disposed in the radial recess intersecting only the bottom surface of the positioning disk.

3. The semiconductor substrate support of claim 2, wherein each radial notch is characterized as a thermal breaker depth, the thermal breaker depth extending from the bottom surface of the positioning disk through at least half the thickness of the positioning disk.

4. The semiconductor substrate support of claim 2, further comprising a first heating device disposed near the bottom surface of the positioning disk and arranged radially inward from the one or more radial thermal breakers relative to the cylindrical axis, the first heating device being in thermal contact with the bottom surface of the positioning disk within the radius of the thermal breakers.

5. The semiconductor substrate support of claim 4, further comprising a second heating device disposed near the bottom surface of the positioning disk and arranged radially outward from the one or more radial thermal breakers relative to the cylindrical axis, the second heating device being in thermal contact with the bottom surface of the positioning disk outside the radius of the thermal breakers.

6. The semiconductor substrate support of claim 1, wherein the radial notch intersecting the top surface is characterized as a thermal break radius, the thermal break radius being at least 60% of the positioning disk radius.

7. The semiconductor substrate support as claimed in claim 1, wherein the at least three lifting members extend above the top surface in the extended state and retract into the radial recess in the retracted state.

8. The semiconductor substrate support of claim 5, wherein at least one of the first and second heating devices includes a heater component trace disposed within a plurality of electrically insulating layers.

9. The semiconductor substrate support of claim 8, wherein the heater component traces comprise a resistive material, and at least one of the electrically insulating layers comprises polyimide.

10. The semiconductor substrate support of claim 8, wherein the heater component traces and the electrical insulating layer are disposed within a plurality of metal layers.

11. The semiconductor substrate support as claimed in claim 5, further comprising: A radiator that extends substantially across the bottom surface of the positioning disk, and the first and second heating devices are disposed between the radiator and the bottom surface of the positioning disk.

12. The semiconductor substrate support of claim 11, wherein the heat sink includes a metal plate defining one or more fluid channels.

13. A semiconductor substrate support, comprising: A substantially cylindrical positioning disk, characterized by a cylindrical shaft and a top surface of a substantially flat plane, wherein the positioning disk defines two radial thermal breakers. The first of the radial thermal breakers is characterized as a radial notch intersecting the bottom surface of the positioning disk with a first radius, and extending from the bottom surface through at least half the thickness of the positioning disk; and The second of the radial thermal breakers is characterized as a radial notch intersecting the top surface with a second radius greater than the first radius, and extending from the top surface through at least half the thickness of the positioning disk, wherein at least three lifting members are disposed in the second of the radial thermal breakers.

14. The semiconductor substrate support of claim 13, further comprising a heat sink extending substantially below the bottom surface of the positioning disk.

15. The semiconductor substrate support of claim 14, wherein the heat sink comprises a metal plate through which heat exchange fluid flows.

16. The semiconductor substrate support as claimed in claim 14, further comprising a first heating device disposed between the heat sink and the positioning plate.

17. The semiconductor substrate support of claim 16, wherein the first heating device is in thermal communication with the bottom surface of the positioning disk and the heat sink within the first radius.

18. The semiconductor substrate support of claim 16, further comprising a second heating device disposed between the heat sink and the positioning plate.

19. The semiconductor substrate support of claim 18, wherein the second heating device is outside the second radius, in thermal communication with the bottom surface of the positioning disk and in thermal communication with the heat sink.

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