Semiconductor components

Abstract

The present application provides a semiconductor element, which includes: a substrate; and a semiconductor structure, which is arranged on the substrate, wherein the semiconductor structure includes: a first conductive semiconductor layer; a second conductive semiconductor layer; a light absorbing layer, which is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode, which is arranged in at least one contact hole, the at least one contact hole exposes the first conductive semiconductor layer by passing through the second conductive semiconductor layer and the light absorbing layer, and the first electrode is connected to the first conductive semiconductor layer; and a second electrode, which is connected to the second conductive semiconductor layer. The light absorbing layer may have a planar shape surrounding the at least one contact hole.

Description

[0001] This application is a divisional application of an invention patent application with an international application date of July 5, 2017, an international application number of PCT / KR2017 / 007134, an application number of 201780041851.2 entering the Chinese national phase, and an invention name of “Semiconductor Element”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of Korean Patent Application No. 10-2016-0084895 filed in Korea on Jul. 5, 2016, and Korean Patent Application No. 10-2017-0069659 filed in Korea on Jun. 5, 2017, which are hereby incorporated by reference in their entirety. Technical Field

[0004] The embodiment relates to a semiconductor element. Background Art

[0005] A semiconductor element including a compound such as GaN and AlGaN has many advantages such as wide and adjustable band gap energy, and thus can be variously used as a light emitting element, a light receiving element, various diodes, and the like.

[0006] Specifically, due to the development of thin film growth technology and element materials, light-emitting elements using III-V or II-VI compound semiconductor materials, such as light-emitting diodes or laser diodes, can achieve various colors such as red, green, blue and ultraviolet, and can achieve effective white light by using fluorescent materials or combining colors. Compared with traditional light sources such as fluorescent lamps, incandescent lamps, etc., these light-emitting elements also have advantages in low power consumption, semi-permanent life, fast response time, safety and environmental friendliness.

[0007] In addition, when using III-V or II-VI compound semiconductor materials to manufacture light receiving elements such as optical detectors or solar cells, photocurrent can be generated by light absorption in various wavelength ranges through the development of component materials. Therefore, light can be used in various wavelength ranges from gamma rays to radio wavelength regions. In addition, light receiving elements have the advantages of fast response time, stability, environmental friendliness, and easy adjustment of component materials, and can be easily used in power control or microwave circuits or communication modules.

[0008] Therefore, the application of semiconductor components is expanding to transmission modules of optical communication devices, light-emitting diode backlights that replace cold cathode fluorescent lamps (CCFL) that form the backlight of liquid crystal display (LCD) devices, white light-emitting diode lamps that replace fluorescent bulbs or incandescent bulbs, automobile headlights, traffic lights, and sensors for detecting gas or fire. In addition, the application of semiconductor components can also be extended to high-frequency application circuits or other power control devices and communication modules.

[0009] Specifically, the light receiving element absorbs light and generates a photocurrent, and thus there is a demand for improvement in photosensitivity.

[0010] Furthermore, research on semiconductor elements as the aforementioned light receiving elements has been conducted in order to improve light sensing sensitivity. Summary of the invention

[0011] Technical issues

[0012] Embodiments also provide a semiconductor element having improved response sensitivity.

[0013] The problems to be solved in the embodiments are not limited thereto, and include the following technical solutions, and also include purposes or effects that can be understood from the embodiments.

[0014] Technical Solution

[0015] A semiconductor element according to an embodiment includes: a substrate; and a semiconductor structure arranged on the substrate, wherein the semiconductor structure includes: a first conductive semiconductor layer; a second conductive semiconductor layer; a light absorbing layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode arranged in at least one contact hole, the at least one contact hole exposing the first conductive semiconductor layer by passing through the second conductive semiconductor layer and the light absorbing layer, and the first electrode connected to the first conductive semiconductor layer; and a second electrode connected to the second conductive semiconductor layer. The light absorbing layer may have a planar shape surrounding the at least one contact hole.

[0016] For example, a ratio of the first plane area of ​​the light absorbing layer to the entire plane area of ​​the first conductive semiconductor layer may be greater than 64.87%.

[0017] For example, the at least one contact hole may include a plurality of contact holes, and the plurality of contact holes may be spaced apart from each other in a symmetrical shape and planar manner.

[0018] For example, the first electrode is disposed on all or a portion of the first conductive semiconductor layer exposed by the at least one contact hole.

[0019] For example, the semiconductor element operates as a photovoltaic cell.

[0020] For example, the semiconductor element may also include: a first insulating layer arranged between the first electrode and the second conductive semiconductor layer and the side of the light absorbing layer exposed in at least one contact hole; a first covering metal layer arranged to surround the first electrode; and a second covering metal layer arranged to surround the second electrode.

[0021] For example, the semiconductor element may further include: a first pad connected to the first electrode through the first cover metal layer; and a second pad connected to the second electrode through the second cover metal layer.

[0022] For example, the semiconductor element may further include: a second insulating layer arranged between the first pad and the second covering metal layer, configured to open upper portions of the first and second covering metal layers to which the first and second pads are to be connected, and arranged on all surfaces of the semiconductor structure.

[0023] For example, the exposed first cover metal layer not covered by the second insulating layer may have a circular planar shape, and may have a diameter of 10 μm to 150 μm in a planar manner.

[0024] For example, at least one contact hole has a circular, elliptical, or polygonal plan shape.

[0025] For example, the semiconductor structure may include: a central region arranged in the inner side of a light absorbing layer in at least one contact hole located inside an edge; and a peripheral region arranged in the peripheral region, the peripheral region protruding more than the central region and having a larger planar shape than the central region.

[0026] Beneficial Effects

[0027] The semiconductor element according to the embodiment has a higher photocurrent with respect to the same chip area compared to the comparative example, and thus the semiconductor element can have good sensing sensitivity and provide a high degree of freedom in design.

[0028] Various advantageous advantages and effects of the present invention are not limited to the above description and will be easily understood when an embodiment of the present invention is described in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A plan view of a semiconductor element according to an embodiment is shown.

[0030] Figure 2 Shown along Figure 1 0 is a cross-sectional view of the semiconductor element taken along line II′ shown in FIG.

[0031] Figure 3 A plan view of a semiconductor element according to another embodiment is shown.

[0032] Figure 4 A plan view of a semiconductor element according to still another embodiment is shown.

[0033] Figure 5 A cross-sectional view illustrating a semiconductor element having a flip-chip bonding structure according to an embodiment.

[0034] Figures 6a to 6f is a process cross-sectional view illustrating a method of manufacturing a semiconductor element according to an embodiment.

[0035] Figure 7 A plan view of a semiconductor element according to a comparative example is shown.

[0036] Figure 8 According to the comparative example, Figure 7 0 is a cross-sectional view of the semiconductor element taken along line II-II′ shown in FIG.

[0037] Fig. 9 A plan view of a semiconductor element according to another comparative example is shown.

[0038] Fig.10 A plan view of a semiconductor element according to still another comparative example is shown.

[0039] Fig.11 is a graph showing a change in photocurrent with wavelength in a semiconductor element according to a comparative example.

[0040] Fig.12 is a graph showing the peak response ratio according to the activation ratio. DETAILED DESCRIPTION

[0041] The present invention can be modified in various ways and has several exemplary embodiments, and specific embodiments will be shown in the drawings and will be described in detail. However, it should be understood that it is not intended to limit the present invention to the specific forms disclosed, but on the contrary, the present invention will cover all modifications, equivalents and substitutes falling within the spirit and scope of the present invention.

[0042] Although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the scope of the present invention, a first element may be referred to as a second element, and a second element may also be referred to as a first element. The term "and / or" means any one or combination of a plurality of related items.

[0043] It should be understood that when an element is referred to as being "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or there may be intermediate elements. Conversely, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intermediate elements.

[0044] The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "comprising", "includs" and / or "including" when used herein specify the presence of the features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0045] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art. It will be further understood that terms, for example, terms defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be understood as an idealized or overly formal meaning unless explicitly defined herein.

[0046] The semiconductor element may include various electronic elements such as a light emitting element, a light receiving element, etc., and the light emitting element and the light receiving element may each include a first conductive semiconductor layer, an active layer (light absorbing layer), and a second conductive semiconductor layer.

[0047] The light-emitting element emits light through the recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent in the material. Therefore, the emitted light can vary depending on the composition of the material.

[0048] The above-mentioned light emitting element can be configured as a light emitting element package and can be used as a light source of a lighting system. For example, the light emitting element can be used as a light source of an image display device or a light source of a lighting device.

[0049] When the light-emitting element is used as a backlight unit of an image display device, the light-emitting element can be used as an edge-type backlight unit or a direct-type backlight unit. When the light-emitting element is used as a light source of an illumination device, the light-emitting element can be used as a lamp or a bulb. Alternatively, the light-emitting element can be used as a light source of a mobile terminal.

[0050] The light emitting element includes a light emitting diode or a laser diode.

[0051] The light emitting diode may include a first conductive semiconductor layer, a second conductive semiconductor layer and a light absorbing layer having the above structure. The light emitting diode and the laser diode may be the same as each other because the two diodes use the electroluminescence phenomenon, wherein light is emitted when current flows after the p-type second conductive semiconductor layer and the n-type first conductive layer semiconductor layer are combined with each other. However, the light emitting diode and the laser diode may have different directions and phases in terms of the emitted light. That is, the laser diode uses stimulated emission and constructive interference phenomena so that light with a specific single wavelength (monochromatic light beam) can be emitted in the same phase and in the same direction. Due to these characteristics, the laser diode can be used in optical communication equipment, medical equipment, semiconductor processing equipment, etc.

[0052] The semiconductor element according to the present embodiment may be a light receiving element.

[0053] The light receiving element may include a thermal element that converts photon energy into thermal energy, a photoelectric element that converts photon energy into electrical energy, etc. Specifically, the photoelectric element may have a light absorbing layer for absorbing light energy above the energy band gap of the light absorbing layer material to generate electrons and holes. Then, due to the electric field applied from the outside of the photoelectric element, the movement of electrons and holes can generate current.

[0054] The light receiving element may include, for example, a photodetector, which is a transducer that detects light and converts the intensity of the light into an electrical signal. The photodetector may include, but is not limited to, a photocell (silicon and selenium), a photoconductive element (cadmium sulfide and cadmium selenide), a photodiode (e.g., a PD having a peak wavelength in a visible blind spectral region or a true blind spectral region), a phototransistor, a photomultiplier tube, a phototube (vacuum and gas-filled), an infrared (IR) detector, etc.

[0055] Typically, semiconductor elements such as photodetectors can be manufactured using direct bandgap semiconductors with good light conversion efficiency. Alternatively, the photodetector can have various structures. As the most common structure, the photodetector can include a pin-type photodetector using a pn junction, a Schottky-type photodetector using a Schottky junction, a metal-semiconductor-metal (MSM) type photodetector, and the like.

[0056] Similar to the light emitting element, the light receiving element, such as a photodiode, may include a first conductive semiconductor layer, a second conductive semiconductor layer and a light absorbing layer (or active layer), which has the above structure and may be composed of a pn junction or a pin structure. The photodiode works when a reverse bias or zero bias is applied. When light is incident on the photodiode, electrons and holes are generated, so that current flows. In this case, the magnitude of the current can be approximately proportional to the intensity of the light incident on the photodiode.

[0057] A photovoltaic cell or solar cell is a photodiode that can convert light into electric current. Similar to a light emitting element, a solar cell may include a first conductive semiconductor layer having a first conductive type, a second conductive semiconductor layer having a second conductive type, and a light absorbing layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer.

[0058] In addition, the solar cell can be used as a rectifier of an electronic circuit by using the rectification characteristics of a general diode of a pn junction, and can be applied to an oscillation circuit of a microwave circuit, etc.

[0059] In addition, the above-mentioned semiconductor elements are not necessarily realized only by semiconductors. In some cases, the semiconductor elements may additionally include metal materials. For example, semiconductor elements such as light receiving elements may be realized using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, and As, and may be realized using intrinsic semiconductor materials or semiconductor materials doped with p-type dopants or n-type dopants.

[0060] The semiconductor element according to the present embodiment may be an avalanche photodiode (APD). The APD may also include an amplification layer having a high electric field and located between the first conductive semiconductor layer and the second conductive semiconductor layer. As the electrons or holes moving to the amplification layer collide with nearby atoms due to the high electric field, new electrons and holes may be generated. By repeating this process, the current may be amplified. Therefore, the APD may react sensitively even to a small amount of light, and may therefore be used for a highly sensitive sensor or for long-distance communication.

[0061] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals are used to denote the same elements throughout the drawings, and redundant descriptions thereof will be omitted.

[0062] The semiconductor elements 300A to 300C, 400 according to the embodiments will be described below using a Cartesian coordinate system (x, y, z), but the embodiments are not limited thereto. That is, it will be understood that another coordinate system may be used to describe the embodiments. In the accompanying drawings, the x-axis, y-axis, and z-axis are described as being orthogonal to each other, but the embodiments are not limited thereto. That is, the x-axis, y-axis, and z-axis may intersect each other without being orthogonal to each other.

[0063] Furthermore, semiconductor elements 300A, 300B, and 300C according to the embodiment which will be described below refer to light receiving elements, but the embodiment is not limited thereto.

[0064] Figure 1 A plan view of a semiconductor element 300A according to an embodiment is shown, and Figure 2Shown along Figure 1 2 is a cross-sectional view of the semiconductor element 300A taken along line II′ shown in FIG.

[0065] refer to Figure 1 and Figure 2 The light receiving element 300A according to the embodiment may include a substrate 310 , a semiconductor structure 320 , a first insulating layer 332 , a second insulating layer 334 , a first electrode 342 , a second electrode 344 , a first cover metal layer 352 , and a second cover metal layer 354 .

[0066] The semiconductor structure 320 is arranged on the substrate 310. For example, the semiconductor structure 320 can be formed on the (0001) plane of the sapphire substrate 310. The substrate 310 can include a conductive material or a non-conductive material. For example, the substrate 310 can include at least one of sapphire (Al2O3), GaN, SiC, ZnO, GaP, InP, Ga2O3, GaAs and Si, but the embodiment is not limited to a specific material of the substrate 310.

[0067] In addition, in order to improve the difference in thermal expansion coefficient and lattice mismatch between the substrate 310 and the semiconductor structure 320, a buffer layer (not shown) may be further arranged between the first conductive semiconductor layer 322 of the semiconductor structure 320 and the substrate 310. The buffer layer may include at least one material selected from the group consisting of, for example, Al, In, N, and Ga, but the present invention is not limited thereto. In addition, the buffer layer may have a single-layer structure or a multi-layer structure. For example, the buffer layer may be composed of AlN and have a thickness of 100 nm, but the embodiment is not limited thereto. Figure 2 As shown in , the buffer layer can be omitted.

[0068] The semiconductor structure 320 may include a first conductive semiconductor layer 322 , a second conductive semiconductor layer 326 , and a light absorbing layer (or active layer) 324 .

[0069] The first conductive semiconductor layer 322 and the second conductive semiconductor layer 326 may have different conductivity types. For example, the first conductive semiconductor layer 322 may be a first conductive semiconductor layer doped with a first conductive dopant, and the second conductive semiconductor layer 326 may be a second conductive semiconductor layer doped with a second conductive dopant. The first conductive dopant may be an n-type dopant, and may include, but is not limited to, Si, Ge, Sn, Se, and Te. In addition, the second conductive dopant may be a p-type dopant, and may include, but is not limited to, Mg, Zn, Ca, Sr, and Ba. According to another embodiment, the first conductive dopant may be a p-type dopant, and the second conductive dopant may be an n-type dopant.

[0070] The first conductive semiconductor layer 322 may be disposed on the substrate 310 and may have a first thickness D8 of 250 nm, but the embodiment is not limited thereto. The second conductive semiconductor layer 326 may have a thickness D9 of 30 nm, but the embodiment is not limited thereto.

[0071] The light absorbing layer 324 may be disposed between the first conductive semiconductor layer 322 and the second conductive semiconductor layer 326. For example, the light absorbing layer 324 may have a third thickness D10 of several tens of micrometers, but the embodiment is not limited to a specific value.

[0072] In addition, although not shown, a strong electric field is generated at a boundary between the light absorbing layer 324 and the amplifying layer and at a portion of the amplifying layer near the boundary by further disposing the amplifying layer between the second conductive semiconductor layer 326 and the light absorbing layer 324. In addition, since strong electric field carriers (e.g., electrons) are multiplied and avalanche in the amplifying layer, the gain of the semiconductor element 300A can be improved.

[0073] The first conductive semiconductor layer 322, the second conductive semiconductor layer 326, the light absorbing layer 324, and the amplifying layer may all be formed of semiconductor compounds. For example, the first conductive semiconductor layer 322, the second conductive semiconductor layer 326, the light absorbing layer 324, and the amplifying layer may all contain nitride semiconductors and may be implemented by heavily doped GaN. For example, each of the first conductive semiconductor layer 322, the second conductive semiconductor layer 326, the light absorbing layer 324, and the amplifying layer may contain a semiconductor compound having an empirical formula of In x Al y Ga 1-x-y The semiconductor material N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) may include any one or more of InAlAs, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

[0074] For example, the first conductive semiconductor layer 322 may include n-type AlGaN, the second conductive semiconductor layer 326 may include p-type AlGaN, and the light absorbing layer 324 may include i-AlGaN.

[0075] Alternatively, the first conductive semiconductor layer 322 may include n-type InP, the second conductive semiconductor layer 326 may include p-type InP, and the light absorbing layer 324 may include undoped InGaAs.

[0076] Photons of light incident on the light receiving element 300A generate electron-hole pairs in the light absorbing layer 324. The generated electrons and holes may be detected as currents, respectively, due to the electric field passing through the light absorbing layer 324, moving in opposite directions and encountering the first electrode 342 and the second electrode 344. Although not shown, the negative terminal and the positive terminal of an ammeter (not shown) are connected to the first electrode 342 and the second electrode 344, respectively, to measure the current generated in the light receiving element 300A.

[0077] According to an embodiment, the entire light absorbing layer 324 may be a depletion region. The light absorbing layer 324 may absorb light in a deep ultraviolet wavelength band. For example, the light absorbing layer 324 may absorb light having a wavelength band of 280 nm or less. However, embodiments are not limited to a specific wavelength band of light absorbed by the light absorbing layer 324. That is, the desired wavelength band of the absorbed light may be set differently.

[0078] Alternatively, the light absorbing layer 324 may include a PIN structure. The PIN structure may include a fifth n-type semiconductor layer (not shown), an intrinsic semiconductor layer (not shown), and a sixth p-type semiconductor layer (not shown). The intrinsic semiconductor layer may be arranged between the fifth n-type semiconductor layer and the sixth p-type semiconductor layer. The intrinsic semiconductor layer may be an undoped semiconductor layer or an unintentionally doped semiconductor layer. An unintentionally doped semiconductor layer may refer to a semiconductor layer in which a dopant (e.g., an n-type dopant such as silicon (Si) atoms) is not doped during the process of growing the semiconductor layer and in which N vacancies have appeared. In this case, as the number of N vacancies increases, the concentration of excess electrons increases. Therefore, electrical characteristics similar to those in the case of doping an n-type dopant in the manufacturing process can be unintentionally obtained. The fifth n-type semiconductor layer may include a semiconductor layer having, for example, Al x Ga (1-x) The sixth p-type semiconductor layer may include a semiconductor material having an empirical formula of N (0≤x≤1). y Ga (1-y) The intrinsic semiconductor layer may include a semiconductor material having an empirical formula of N (0≤y≤1). z Ga (1-z) Semiconductor materials with the empirical formula of NN (0≤z≤1).

[0079] The semiconductor element 300A as a light receiving element may be a rearward illumination type in which photons are incident on the substrate 310 , and may be a forward illumination type in which photons are incident on the second conductive semiconductor layer 326 .

[0080] When the semiconductor element 300A is a forward-illumination type and the sixth p-type semiconductor layer has the same energy band gap as the intrinsic semiconductor layer, the carriers in the sixth p-type semiconductor layer are excited and absorbed, and therefore it may be difficult to provide the carriers to the intrinsic semiconductor layer. Therefore, when aluminum (Al) is added to the intrinsic semiconductor layer, the carriers can be further absorbed in the sixth p-type semiconductor layer. This situation can be prevented by increasing the energy band gap of the sixth p-type semiconductor layer, and the carriers can be prevented from being absorbed in the sixth p-type semiconductor layer. Therefore, in order to increase the energy band gap of the sixth p-type semiconductor layer to exceed the energy band gap of the intrinsic semiconductor layer, Al can be further added to the sixth p-type semiconductor layer. That is, the content of aluminum z contained in the intrinsic semiconductor layer can be greater than or equal to the content of aluminum y contained in the sixth p-type semiconductor layer. However, the energy band gap of the sixth p-type semiconductor layer and the intrinsic semiconductor layer is not limited thereto. This is because when the thickness of the sixth p-type semiconductor layer is thin enough, the carriers may not be absorbed in the sixth p-type semiconductor layer.

[0081] For example, the fifth n-type semiconductor layer may include GaN, and each of the sixth p-type semiconductor layer and the intrinsic semiconductor layer may include a semiconductor layer having an empirical formula of Al 0.45 Ga 0.55 In addition, the sixth p-type semiconductor layer may be much thinner than the intrinsic semiconductor layer.

[0082] Furthermore, the size or thickness of the band gap of the fifth n-type semiconductor layer, the intrinsic semiconductor layer, and the sixth p-type semiconductor layer may be determined depending on whether the semiconductor element 300A is a rear-light type or a front-light type. Embodiments are not limited to specific values ​​of the relative size and thickness of the band gap.

[0083] At least one of the fifth n-type semiconductor layer, the intrinsic semiconductor layer, and the sixth p-type semiconductor layer may be a superlattice (SL) layer (or a superjunction (SL) layer). The minimum thicknesses of the fifth n-type semiconductor layer, the intrinsic semiconductor layer, and the sixth p-type semiconductor layer may be and However, the embodiments are not limited thereto.

[0084] Meanwhile, the first electrode 342 may be disposed on the first conductive semiconductor layer 322 in at least one groove (or contact hole) CH1, wherein the groove (or contact hole) CH1 exposes the first conductive semiconductor layer 322 by passing through the light absorption layer 324 and the second conductive semiconductor layer 326, and the first electrode 342 may be electrically connected to the first conductive semiconductor layer 322.

[0085] According to an embodiment, Figure 2As shown in , the first electrode 342 may be arranged in a portion of the first conductive semiconductor layer 322 exposed by the at least one groove CH1. In this case, the first width L5 of the first electrode 342 may be smaller than the second width L6 of the exposed first conductive semiconductor layer 322 in a second direction different from the first direction in which the substrate 310 is observed from the light emitting structure 320. Here, the second direction may be orthogonal to the first direction. For example, the first direction may be the x-axis direction, and the second direction may be the y-axis direction.

[0086] According to another embodiment, Figure 2 Differently, the first electrode 342 may be disposed on all surfaces of the first conductive semiconductor layer 322 exposed by the at least one groove CH1. In this case, the first width L5 may be the same as the second width L6.

[0087] The first electrode 342 may have a single layer structure or a multilayer structure. For example, the first electrode 342 may include a first layer (not shown) and a second layer (not shown). The first layer may include Ti and may be disposed on the first conductive semiconductor layer 322 exposed by the groove CH1. The second layer may include Al and may be disposed on the first layer.

[0088] refer to Figure 1 , at least one groove CHE11 is illustrated as having a circular planar shape, but the embodiment is not limited thereto. That is, according to another embodiment, the contact hole CHE11 may have an elliptical or polygonal planar shape. Here, CHE11 refers to the edge of the groove CH1.

[0089] When the groove CH11 has a circular planar shape, refer to Figure 1 and 2 , a diameter Φ0 (or a diameter of the groove) of the exposed first capping metal layer 352 not covered by the second insulating layer 334 when viewed from the top may be in the range of 10 μm to 150 μm, but the embodiment is not limited thereto.

[0090] The second electrode 344 may be disposed on the second conductive semiconductor layer 326 and electrically connected to the second conductive semiconductor layer 326. The second electrode 344 may have a single layer structure or a multilayer structure. For example, the second electrode 344 may include a first layer (not shown) and a second layer (not shown). The first layer may include Ni and be disposed on the second conductive semiconductor layer 326, and the second layer may include Au and be disposed on the first p-type layer.

[0091] Figure 2Each of the first electrode 342 and the second electrode 344 shown in the figure can be formed of a metal selected from Ag, Ni, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Cr and selective combinations thereof.

[0092] When the second electrode 344 includes an ohmic contact material, a separate ohmic layer may be omitted, such as Figure 2 That is, according to another embodiment, when the second electrode 344 does not include an ohmic contact material, different from Figure 2 In the example illustrated in FIG. 3 , a separate ohmic layer (not shown) performing an ohmic function may be arranged between the second electrode 344 and the second conductive semiconductor layer 326. The ohmic layer may be a transparent conductive oxide (TCO). For example, the ohmic layer may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IZON, AGZO, IGZO, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited thereto.

[0093] According to one embodiment, the light absorbing layer 324 may have a planar shape surrounding at least one groove CH1 .

[0094] In addition, refer to Figure 2 , the semiconductor structure 320 may include a central area (CA) and a peripheral area (PA). CA refers to an area between portions of the light absorbing layer 324 in the groove CH1 located at the center inside the edge of the semiconductor structure 320, and PA refers to an area where the light absorbing layer 324 is arranged. According to an embodiment, PA may have a more protruding cross-sectional shape than CA.

[0095] Figure 3 1 shows a plan view of a semiconductor element 300B according to another embodiment, and Figure 4 FIG. 2 shows a plan view of a semiconductor element 300C according to another embodiment. Figure 3 and Figure 4 The second electrode is omitted.

[0096] exist Figure 1 and Figure 2 In the embodiment, the semiconductor element 300A includes only one groove CH1 or CHE11, but the embodiment is not limited thereto. That is, the at least one groove may include a plurality of grooves.

[0097] like Figure 2As shown in FIG. 1 , the semiconductor element 300B may include four grooves CH21, CH22, CH23, and CH24. Figure 2 The CHE11 shown in Figure 1 indicates the edge of the groove CH1. Figure 3 CHE21, CHE22, CHE23 and CHE24 shown in FIG. 1 indicate edges of four grooves CH21, CH22, CH23 and CH24, respectively.

[0098] Alternatively, if Figure 4 As shown in FIG. 1 , the semiconductor element 300C may include nine grooves CH31 to CH39. Figure 2 The CHE11 shown in Figure 1 indicates the edge of the groove CH1. Figure 4 CHE31 to CH39 shown in FIG. 8 indicate edges of nine grooves CH31 to CH39 , respectively.

[0099] Figure 3 and Figure 4 The cross-sectional shapes of the semiconductor elements 300B and 300C shown in FIG. Figure 1 and 2 The semiconductor element 300A shown in FIG. 1 is the same as that of FIG. 1 , except for the different positions and numbers of the grooves CH21 to CH24 or CH31 to CH39. Figure 3 and Figure 4 The cross-sectional shapes of the semiconductor elements 300B and 300C shown in FIG. Figure 2 Same as shown in . Figure 3 and Figure 4 The semiconductor elements 300B and 300C shown in FIG. Figure 1 and 2 The semiconductor element 300A shown in FIG. 1 is the same as the semiconductor element 300A shown in FIG. 1 , except for the different positions and numbers of the grooves CH. Figure 3 and Figure 4 The description of the semiconductor elements 300B and 300C shown in FIG. 1 is replaced by Figure 1 and 2 Description of the semiconductor element 300A shown in FIG.

[0100] Furthermore, when each of the semiconductor elements 300B and 300C includes a plurality of grooves, the plurality of grooves may be spaced apart from each other in a symmetrical shape and in a planar manner, such as Figure 3 and 4 As shown in , but the embodiment is not limited thereto.

[0101] Reference again Figure 1 and 2, the first insulating layer 332 may be disposed between the side of the light absorbing layer 324 and the second conductive semiconductor layer 326 exposed by the groove CH1, and the first electrode 342 and the first capping metal layer 352. By disposing the first insulating layer 332, the first electrode 342 and the first capping metal layer 352 may be electrically separated from the side of the light absorbing layer 324 and the second conductive semiconductor layer 326.

[0102] The first capping metal layer 352 may be disposed to surround the first electrode 342. The second capping metal layer 354 may be disposed to surround the second electrode 344.

[0103] The first and second cover metal layers 352 and 354 may be composed of a material having good electrical conductivity. For example, the first and second cover metal layers 352 and 354 may selectively include but are not limited to at least one material selected from Ti, Au, Ni, In, Co, W, Fe, Rh, Cr, and Al.

[0104] In some cases, the first and second capping metal layers 352 and 354 may be omitted.

[0105] like Figures 1 to 4 As shown in FIG. 1 , the semiconductor elements 300A, 300B, and 300C may have a horizontal bonding structure, but the embodiment is not limited thereto.

[0106] The semiconductor element 400 having the flip-chip bonding structure will be described below.

[0107] Figure 5 A cross-sectional view of a semiconductor element 400 having a flip-chip bonding structure according to an embodiment is shown.

[0108] Figure 5 The semiconductor device 400 shown in FIG. 4 includes Figure 2 3. The semiconductor element 300A shown in FIG. 3, first and second pads 372 and 374, first and second electrode pads 382 and 384, first and second lead frames 402 and 404, and first and second insulating portions 412 and 414. Here, the first and second electrode pads 382 and 384 will be omitted.

[0109] Because included Figure 5 The semiconductor device 300A in the semiconductor device 400 shown in FIG. Figure 2 The semiconductor elements shown in FIG. 1 are the same, so the same reference numerals are used and a detailed description thereof will be omitted.

[0110] The first pad 372 may be electrically connected to the first electrode 342 through the first capping metal layer 352 , and the second pad 374 may be electrically connected to the second electrode 344 through the second capping metal layer 354 .

[0111] Furthermore, the first pad 372 serves to electrically connect the first electrode 342 to the first lead frame 402 , and the second pad 374 serves to electrically connect the second electrode 344 to the second lead frame 404 .

[0112] Furthermore, first and second insulating portions 412 and 414 may be disposed between the first and second lead frames 402 and 404 to electrically isolate the first and second lead frames 402 and 404 from each other.

[0113] The second insulating layer 334 may be disposed between the first pad 372 and the second capping metal layer 354 to electrically isolate the first pad 372 and the second capping metal layer 354 from each other.

[0114] The second insulating layer 334 may be disposed on all surfaces of the semiconductor structure 320 while exposing an upper portion of the first cover metal layer 352 to which the first pad 372 is connected and an upper portion of the second cover metal layer 354 to which the second pad 374 is connected. Figure 1 It can be seen from FIG. 3 that the first cover metal layer 352 and the second cover metal layer 354 are partially exposed by the second insulating layer 334. Figure 3 As can be seen in FIG. 1 , the first cover metal layers 352-1 to 352-4 are partially exposed by the second insulating layer 334, and Figure 4 As can be seen in FIG. 3 , the first capping metal layers 352 - 1 to 352 - 9 are partially exposed by the second insulating layer 334 .

[0115] The first insulating layer 332 and the second insulating layer 334 and the first insulating portion 412 and the second insulating portion 414 may be made of the same material or different materials. In addition, each of the first and second insulating layers 332 and 334 and the first and second insulating portions 412 and 414 may be composed of a non-conductive oxide or nitride, and may be composed of, for example, a silicon oxide (selective alloy) layer, an oxynitride layer, an Al2O3 layer, or an aluminum oxide layer, but the embodiment is not limited thereto.

[0116] Because different from Figure 2 The semiconductor device 300A having a horizontal junction structure shown in FIG. Figure 5 The semiconductor element 400 shown in FIG. 4 has a flip chip structure, so light from an external light source is incident on the light absorbing layer 324 through the substrate 310 and the first conductive semiconductor layer 322. To this end, the substrate 310 and the first conductive semiconductor layer 322 are made of transparent materials, and the second conductive semiconductor layer 326, the first electrode 342 and the second electrode 344 may be made of transparent or opaque materials.

[0117] The following will refer to Figures 6a to 6f Description of manufacturing based on Figure 1 and Figure 2 The method of the semiconductor element 300A of the embodiment shown in FIG. 1 is not limited thereto. That is, Figure 1 and Figure 2 The semiconductor element 300A shown in FIG. 1 may be formed by Figures 6a to 6f In addition, in addition to the different positions and numbers of the grooves, Figure 3 and Figure 4 The semiconductor elements 300B and 300C shown in FIG. Figures 6a to 6f Made by the method shown in the figure.

[0118] Figures 6a to 6f 300A is a process cross-sectional view illustrating a method of manufacturing the semiconductor element 300A according to the embodiment.

[0119] First reference Figure 6a , a semiconductor structure 320 is formed on a substrate 310. In detail, a first conductive semiconductor layer 322 is formed on the substrate 310, and a light absorbing layer 324 is formed on the first conductive semiconductor layer 322. Subsequently, a second conductive semiconductor layer 326 is formed on the light absorbing layer 324.

[0120] Then, refer to Figure 6b , a first groove CH1 is formed to expose the first conductive semiconductor layer 322 through the second conductive semiconductor layer 326 and the light absorbing layer 324. The photolithography process can be used to obtain Figure 6b That is, the first groove CH1 may be formed by placing an etching mask (not shown) in a region other than a region where the first groove CH1 is to be formed, etching the semiconductor structure 320 using the etching mask to form the first groove CH1, and stripping the etching mask. Figure 6b The groove CH1 shown in the figure.

[0121] Then, refer to Figure 6c A first insulating layer 332 is formed on all surfaces of the semiconductor structure while exposing a region in the groove CH1 where the first electrode is to be disposed and a region on the second conductive semiconductor layer 326 where the second electrode is to be disposed.

[0122] Then, refer to Figure 6d , the first electrode 342 is formed in the groove CH1 and formed over the exposed first conductive semiconductor layer 322 not covered by the first insulating layer 332 .

[0123] Then, refer to Figure 6e , a second electrode 344 is formed over the exposed second conductive semiconductor layer 326 , which is not covered by the first insulating layer 332 .

[0124] Then, refer to Figure 6fAs shown, a first cover metal layer 352 surrounding the first electrode 342 and a second cover metal layer 354 surrounding the second electrode 344 are formed.

[0125] The following description will be provided with reference to the drawings including a semiconductor element according to a comparative example and a semiconductor element according to an embodiment.

[0126] Figure 7 A plan view of a semiconductor element according to a comparative example is shown, and Figure 8 Shown along Figure 7 2 is a cross-sectional view of a semiconductor element according to a comparative example taken along line II-II′ shown in FIG.

[0127] According to the comparative example and Figure 7 and Figure 8 The semiconductor element shown in FIG. 1 includes a substrate 10, a semiconductor structure 20, a second insulating layer 34, first and second electrodes 42 and 44, and first and second cover metal layers 52 and 54. Here, the substrate 10, the semiconductor structure 20, the second insulating layer 34, the first and second electrodes 42 and 44, and the first and second cover metal layers 52 and 54 perform the same role as the substrate 310, the semiconductor structure 20, the second insulating layer 34, the first and second electrodes 42 and 44, and the first and second cover metal layers 352 and 354, and thus redundant description thereof will be omitted. That is, the first conductive semiconductor layer 22, the second conductive semiconductor layer 26, and the light absorbing layer 24 included in the semiconductor structure 20 respectively perform the same role as the substrate 310, the semiconductor structure 20, the second insulating layer 34, the first and second electrodes 42 and 44, and the first and second cover metal layers 352 and 354. Figure 2 The first conductive semiconductor layer 322, the second conductive semiconductor layer 326 and the light absorbing layer 324 shown in FIG.

[0128] According to the embodiment and Figure 1 and Figure 5 The semiconductor elements 300A, 300B, 300C, and 400 shown in FIG. 3 may have a planar shape in which the light absorbing layer 324 surrounds the first electrode 342. On the other hand, according to the comparative example and in Figure 7 and Figure 8 The semiconductor element shown in FIG. 4 has a planar shape in which the first electrode 42 surrounds the light absorbing layer 24. In addition to these differences, according to the comparative example and Figure 7 and 8 The semiconductor elements shown in FIG. 3 are the same as the semiconductor elements 300A, 300B, and 300C according to the embodiment, and thus a repeated description thereof will be omitted.

[0129] On the other hand, according to the comparative example and Figure 7 and Figure 8The semiconductor element shown in FIG. 4 has a planar shape in which the first electrode 42 surrounds the light absorbing layer 24. In this case, the third planar area A3 of the light absorbing layer 24 may be smaller than the fourth planar area A4, which is the entire planar area of ​​the first conductive semiconductor layer 22 minus the third planar area A3. Here, the third planar area A3 may be expressed using the following equation 1, and the fourth planar area A4 may be expressed using the following equation 2.

[0130] [Equation 1]

[0131]

[0132] [Equation 2]

[0133] A4=LT×WT-A3

[0134] here, Indicates the diameter of the light absorbing layer 24 having a circular planar shape, WT indicates the width of the first conductive semiconductor layer 22 in the second direction, and LT indicates the length of the first conductive semiconductor layer 22 in the third direction. Here, the third direction may be different from the first direction and the second direction and be orthogonal to the first direction and the second direction. For example, when the first direction is the x-direction and the second direction is the y-axis direction, the third direction may be the z-direction.

[0135] The first plane area A1 may be expressed using the following Equation 3, and the second plane area A2 may be expressed using the following Equation 4.

[0136] [Equation 3]

[0137]

[0138] [Equation 4]

[0139]

[0140] here, indicates a distance between portions of the light absorbing layer 24 in the groove having a circular planar shape, WT indicates a width of the first conductive semiconductor layer 22 in the second direction, and LT indicates a length of the first conductive semiconductor layer 22 in the third direction.

[0141] Fig. 9 and 10 A plan view of a semiconductor element according to another example is shown.

[0142] Fig. 9 The diameter of the light absorbing layer 24 shown in FIG. Less than Fig.10 The diameter of the light absorbing layer 24 shown in FIG. and Fig.10The diameter of the light absorbing layer 24 shown in FIG. Less than Figure 7 The diameter of the light absorbing layer 24 shown in FIG. In addition to the number and position of the second cover metal layer 54 and the diameter of the light absorbing layer 24 In addition to being different, Fig. 9 and Fig.10 The semiconductor components shown in Figure 7 and 8 The semiconductor elements shown in FIG. 1 are the same, and thus the same reference numerals are used for the same components. Fig. 9 and 10 Repeated description of the semiconductor elements shown in .

[0143] Fig.11 is a graph showing a change in photocurrent with wavelength in a semiconductor element according to a comparative example. Here, the horizontal axis indicates the wavelength, and the vertical axis indicates the photocurrent.

[0144] exist Figure 7 , Fig. 9 as well as Fig.10 When the diameter of the light absorbing layer 24 in the semiconductor element is changed so that both the width W in the second direction and the length L in the third direction are 1100 μm, When the wavelength-photocurrent is measured, Fig.11 In this case, the width WT of the first conductive semiconductor layer 22 in the second direction and the length LT of the first conductive semiconductor layer 22 in the third direction are set to 1100 μm. In this case, corresponding to the diameter The changed third and fourth plane areas A3 and A4 are shown in Table 1 below.

[0145] [Table 1]

[0146]

[0147] refer to Fig.11 , it can be seen that, relative to a wavelength of about 270nm, Fig.10 The photocurrent C2 of the semiconductor element shown in FIG. Fig. 9 The photocurrent C3 of the semiconductor element shown in FIG. Figure 7 The photocurrent C1 of the semiconductor element shown in FIG. Fig.10 That is, it can be seen that the photocurrent increases with the diameter of the light absorbing layer 24. The increase in photocurrent can indicate that the sensing sensitivity of the semiconductor element increases.

[0148] In addition, Figure 1 and Figure 4When the distance between the portions of the light absorbing layer 24 in the grooves of the semiconductor elements 300A and 300B is changed so that both the width W in the second direction and the length L in the third direction are 1100 μm, When the first plane area A1 and the second plane area A2 are found as shown in Table 2 below. In this case, the width WT of the first conductive semiconductor layer 322 in the first direction and the length LT of the first conductive semiconductor layer 322 in the third direction are set to 1100 μm. In addition, in this case, the diameter of the exposed first covering metal layer 352 not covered by the second insulating layer 334 is Considered to be the diameter

[0149] [Table 2]

[0150]

[0151] Fig.12 1 is a graph showing peak response ratios corresponding to activation ratios, and illustrates different peak response ratios K2, K3, K4, and K5 with reference to the lowest peak response ratio K1. That is, the peak response ratios K2 to K5 correspond to the peak response ratios when the peak response ratio K1 is "1".

[0152] refer to Fig.12 , it can be seen that when Fig. 9 When the third plane area A3 of the light absorbing layer shown in FIG. 1 is the smallest, the peak response ratio K1 is the smallest. Fig.10 As shown in FIG. 1 , the peak response ratio K2 slightly increases when the third plane area A3 of the light absorbing layer 24 increases, and the peak response ratio K3 further increases when the third plane area A3 of the light absorbing layer 24 further increases. In addition, when the first plane area A1 of the light absorbing layer 24 is as shown in FIG. Figure 4 When the peak response ratio K4 increases as in the embodiment 300C shown in FIG. 1 , the peak response ratio K4 increases over the peak response ratios K1, K2, and K3 according to the comparative example, and when the peak response ratio K4 increases as in the embodiment 300C shown in FIG. Figure 1 As in the embodiment 300A shown in FIG. 1 , when the first plane area A1 of the light absorbing layer 24 further increases, the peak response ratio K5 becomes maximum.

[0153] Referring to Table 1, for the semiconductor element according to the comparative example, the maximum third plane area A3 of the light absorbing layer 24 is 7.85×10 -3 cm 2 , which is the entire plane area LT x WT of the first conductive semiconductor layer 22 (i.e., 12.1 cm 2 ) is about 64.87%. On the other hand, according to the embodiment, it can be seen that the first plane area A1 of the light absorbing layer 324 is greater than 64.87%. For example, referring to Table 2, Figure 4 The first plane area A1 shown in FIG. 1 is approximately the entire plane area of ​​the first conductive semiconductor layer 322 (ie, 12.1 cm 2 According to the embodiment, the ratio of the first plane area A1 of the light absorbing layer 324 to the entire plane area of ​​the first conductive semiconductor layer 322 may be greater than 64.87%.

[0154] As a result, as the plane area of ​​the light absorbing layer 324 increases, the semiconductor elements 300A, 300B, and 300C according to the embodiment have a higher photocurrent than that in the comparative example with respect to the same chip area L×W. That is, the semiconductor elements 300A, 300B, and 300C according to the embodiment have a higher sensing sensitivity than that of the semiconductor element according to the comparative example. This is the case where the semiconductor elements 300A, 300B, and 300C according to the embodiment operate in a photovoltaic mode.

[0155] In addition, the degree of freedom in designing the semiconductor elements 300A, 300B, and 300C increases when the light absorbing layer 324 according to the embodiment has a planar shape surrounding the groove, compared to when manufacturing the semiconductor element according to the comparative example in which the first electrode 342 surrounds the light absorbing layer 324. That is, the arrangement (or position) and / or number of the grooves can be designed in various ways.

[0156] Although the present invention has been described with reference to the embodiments, these are merely examples and do not limit the present invention. It will be appreciated by those skilled in the art that various modifications and applications may be made therein without departing from the essential features of the embodiments. For example, the elements described in detail in the above embodiments may be modified and implemented. In addition, the differences associated with these modifications and applications should be interpreted as being included within the scope of the present invention as defined by the appended claims.

Claims

1. A semiconductor element, comprising: substrate; as well as a semiconductor structure arranged on the substrate, Wherein, the semiconductor structure comprises: a first conductive semiconductor layer; a second conductive semiconductor layer; a light absorbing layer, the light absorbing layer being arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an amplifying layer, the amplifying layer being arranged between the second conductive semiconductor layer and the light absorbing layer, a first electrode disposed in at least one contact hole that exposes the first conductive semiconductor layer by passing through the second conductive semiconductor layer and the light absorbing layer, and connected to the first conductive semiconductor layer; and a second electrode connected to the second conductive semiconductor layer, Wherein, the light absorbing layer has a planar shape surrounding the at least one contact hole.

2. The semiconductor element according to claim 1, wherein A ratio of a first plane area of ​​the light absorbing layer to an entire plane area of ​​the first conductive semiconductor layer is greater than 64.87%.

3. The semiconductor device according to claim 1, in, The at least one contact hole comprises a plurality of contact holes, The plurality of contact holes are spaced apart from each other in a symmetrical shape and in a planar manner.

4. The semiconductor device according to claim 1, in, The first electrode is disposed on all or a portion of the first conductive semiconductor layer exposed by the at least one contact hole.

5. The semiconductor device according to claim 1, wherein The semiconductor element operates as a photovoltaic cell.

6. The semiconductor device according to claim 1, further comprising: a first insulating layer disposed between the first electrode and sides of the second conductive semiconductor layer and the light absorbing layer exposed in the at least one contact hole; a first covering metal layer, the first covering metal layer being arranged to surround the first electrode; as well as A second cover metal layer is arranged to surround the second electrode.

7. The semiconductor device according to claim 6, further comprising: a first pad connected to the first electrode through the first cover metal layer; as well as A second pad is connected to the second electrode through the second cover metal layer.

8. The semiconductor element according to claim 7 further includes a second insulating layer, which is arranged between the first pad and the second covering metal layer, is configured to open the upper portions of the first covering metal layer and the second covering metal layer to which the first pad and the second pad are to be connected, and is arranged on all surfaces of the semiconductor structure. 9 . The semiconductor element according to claim 8 , wherein the exposed first cover metal layer not covered by the second insulating layer has a circular planar shape having a diameter of 10 μm to 150 μm in a planar manner.

10. The semiconductor device according to claim 1, wherein The at least one contact hole has a circular, elliptical or polygonal plan shape.

11. The semiconductor device according to claim 1, wherein The semiconductor structure comprises: a central region disposed in an inner side of the light absorbing layer in the at least one contact hole located inside the edge; and A peripheral region in which the light absorbing layer is arranged, the peripheral region protrudes more than the central region and has a larger planar shape than the central region.

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