A method of manufacturing a semiconductor structure

Abstract

The application provides a manufacturing method of a semiconductor structure, relates to the technical field of semiconductors, and can reduce the hydrophilicity of an anti-reflection coating. The manufacturing method of the semiconductor structure comprises the following steps: providing a semiconductor substrate; forming an anti-reflection coating on the semiconductor substrate, wherein the material of the anti-reflection coating comprises silicon covalent bonds; introducing an oxygen-containing gas into a reaction chamber, and turning on the power supply of the reaction chamber, so that the oxygen-containing gas reacts with the silicon covalent bonds on the surface of the anti-reflection coating; and forming a photoresist coating on the anti-reflection coating.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a method for manufacturing a semiconductor structure. Background Technology

[0002] As the linewidth in semiconductor design decreases, the process requirements for manufacturing electronic devices are also gradually increasing. Summary of the Invention

[0003] This invention provides a method for manufacturing a semiconductor structure that can reduce the hydrophilicity of an anti-reflective coating.

[0004] To achieve the above objectives, the present invention provides a method for manufacturing a semiconductor structure, comprising: providing a semiconductor substrate; forming an anti-reflective coating on the semiconductor substrate, the anti-reflective coating material comprising silicon covalent bonds; introducing oxygen-containing gas into a reaction chamber and turning on a power supply to the reaction chamber, the oxygen-containing gas reacting with the silicon covalent bonds on the surface of the anti-reflective coating; and forming a photoresist coating on the anti-reflective coating.

[0005] Optionally, oxygen-containing gas includes oxygen.

[0006] Optionally, oxygen-containing gas is introduced into the reaction chamber, and the power supply to the reaction chamber is turned on, including: introducing oxygen into the reaction chamber and providing radio frequency power to the reaction chamber.

[0007] Optionally, the oxygen flow rate is 100–1500 sccm, the oxygen supply time to the reaction chamber is 1–20 s, the pressure in the reaction chamber is 0.1–15.0 Torr, the radio frequency power is 10–800 W, and the radio frequency power is supplied to the reaction chamber for 3–20 s.

[0008] Optionally, the method for manufacturing the semiconductor structure further includes: introducing argon and / or helium into the reaction chamber while simultaneously introducing oxygen into the reaction chamber, wherein the flow rate of argon and / or helium is 1500–3000 sccm.

[0009] Optionally, after the anti-reflective coating is formed and before oxygen-containing gas is introduced into the reaction chamber, the method for manufacturing the semiconductor structure further includes heating the reaction chamber to a temperature of 280–480°C.

[0010] Optionally, the reaction chamber can be heated using a nozzle, with a distance of 150–500 mils between the nozzle and the base of the reaction chamber.

[0011] Optionally, methods for forming an anti-reflective coating include: plasma-enhanced chemical vapor deposition.

[0012] Optionally, before forming the antireflective coating, the semiconductor structure manufacturing method further includes: forming a layer to be etched on a semiconductor substrate; after forming the photoresist coating, the semiconductor structure manufacturing method further includes: exposing and developing the photoresist coating to obtain a photoresist pattern; and sequentially etching the antireflective coating and the layer to be etched to obtain an etched pattern.

[0013] The semiconductor structure manufacturing method provided by this invention involves introducing an oxygen-containing gas into a reaction chamber after the formation of an anti-reflective coating and before the formation of a photoresist coating. This causes the oxygen-containing gas to react with the silicon covalent bonds in the anti-reflective coating, reducing the number of silicon covalent bonds on the surface of the anti-reflective coating near the photoresist coating. This results in a greater hydrophobicity on the surface of the anti-reflective coating near the photoresist coating, preventing excessive hydrophilicity of the anti-reflective coating from affecting the pattern and adhesion of the photoresist coating, thereby impacting the pattern of the etched pattern on the semiconductor substrate 10 fabricated using the photoresist coating and affecting the function of the semiconductor structure. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0016] Figure 2 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0017] Figure 3 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0018] Figure 4 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0019] Figure 5 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0020] Figure 6 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0021] Figure 7 A manufacturing process diagram of a semiconductor structure provided in an embodiment of the present invention;

[0022] Figure 8 This is a process diagram illustrating the manufacturing process of a semiconductor structure provided in an embodiment of the present invention.

[0023] Figure label:

[0024] 10-Substrate; 11-First anti-reflective coating; 12-Second anti-reflective coating; 13-Photoresist coating; 131-Photoresist pattern; 14-Layer to be etched; 141-Etching pattern. Detailed Implementation

[0025] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0026] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0027] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0028] This invention provides a method for manufacturing a semiconductor structure, involving surface hydrophobic treatment of an anti-reflective layer. In an embodiment of this invention, when patterning of the layer to be etched is required, after forming the anti-reflective layer on the layer to be etched, the Si bonds in the anti-reflective layer (such as SiON or SiN materials) are replaced by O bonds in an oxygen-containing gas, thereby achieving the hydrophobic function of the anti-reflective layer. Specific embodiments will be described below.

[0029] like Figure 1 As shown, a semiconductor substrate 10 is provided, and an etchable layer 10 is formed on the semiconductor substrate 10.

[0030] The semiconductor substrate 10 can be a germanium substrate, a bulk silicon substrate, a silicon-on-insulator (SOI) substrate, a III-V compound semiconductor substrate, a germanium-on-insulator (GOI) substrate, a silicon-germanium substrate, or an epitaxial thin film substrate obtained by performing selective epitaxial growth (SEG). To fabricate the semiconductor structure, an etchable layer 10 can be formed on the semiconductor substrate 10. For example, to form a gate electrode pattern, a gate electrode material layer is formed on the semiconductor substrate 10 as the etchable layer 10.

[0031] like Figure 2 As shown, an anti-reflective coating (ARC) 11 is then formed on the layer to be etched 14. The material of the anti-reflective coating 11 includes silicon covalent bonds. Here, the material of the anti-reflective coating 11 is not limited, as long as the anti-reflective coating 11 can reduce light reflection. For example, the material of the anti-reflective coating 11 can be SiON or SiN, etc.

[0032] An anti-reflective coating 11 can be formed on a semiconductor substrate 10 using a plasma-enhanced chemical vapor deposition (PE-CVD) process.

[0033] Next, the reaction chamber can be heated using a nozzle to reach a temperature of 280–480°C. The distance between the nozzle and the base of the reaction chamber can be 150–500 mils.

[0034] Next, as Figure 3 As shown, oxygen-containing gas is introduced into the reaction chamber, and the power supply to the reaction chamber is turned on. The oxygen-containing gas reacts with the covalent bonds of silicon in the anti-reflective coating 11. Simultaneously, argon (Ar) and / or helium (He) can also be introduced into the reaction chamber. By introducing inert gases such as Ar and / or He, the gas concentration in the reaction chamber can be adjusted to achieve suitable process conditions. The oxygen-containing gas can be, for example, oxygen (O2) or ozone.

[0035] Regarding the reaction conditions when the antireflective coating 11 reacts with oxygen-containing gas, taking O2 as an example, the duration of introducing O2 into the reaction chamber can be 1–20 s, and the flow rate of O2 can be 100–1500 sccm. Turning on the power supply to the reaction chamber includes providing radio frequency power to the reaction chamber, which can be 10–800 W, for a duration of 3–20 s. The flow rate of Ar and / or He can be 1500–3000 sccm. Furthermore, the pressure in the reaction chamber should be maintained at 0.1–15.0 Torr.

[0036] Taking the anti-reflective coating 11 as an example, where the material is SiN and the oxygen-containing gas is O2, SiN can react chemically with O2. The reaction equation is: 2SiN + O2 = 2SiO + N2.

[0037] like Figure 4 As shown, a photoresist coating 13 is formed on the anti-reflective coating 11. The photoresist coating 13 can be either positive or negative photoresist.

[0038] like Figure 5 As shown, the photoresist coating 13 is exposed and developed to obtain a photoresist pattern 131.

[0039] like Figure 6 As shown, the anti-reflective coating 11 is etched, and the etched pattern is the same as the photoresist pattern 131.

[0040] like Figure 7 As shown, the layer 14 to be etched is etched to obtain the etched pattern 141. It should be understood that the etching process and materials will vary depending on the material of the layer 14 to be etched.

[0041] For example, if the material of the layer 14 to be etched is a metal, a wet etching method can be used to etch the layer 14 using an etching solution suitable for that metal. If the material of the layer 14 to be etched is an inorganic thin film, a dry etching method can be used to etch the layer 14.

[0042] like Figure 8 As shown, the photoresist pattern 131 and the etched anti-reflective coating 11 are removed.

[0043] Finally, turn off the power to stop supplying radio frequency power to the reaction chamber; stop supplying gas to the reaction chamber and extract the gas from the reaction chamber to restore the reaction chamber to a vacuum state for subsequent use.

[0044] The semiconductor structure manufacturing method provided in this embodiment of the invention involves introducing an oxygen-containing gas into a reaction chamber after the formation of the anti-reflective coating 11 and before the formation of the photoresist coating 13. This allows the oxygen-containing gas to react with the silicon covalent bonds in the anti-reflective coating 11, reducing the number of silicon covalent bonds on the surface of the anti-reflective coating 12 near the photoresist coating 13. As a result, the hydrophobicity of the surface of the anti-reflective coating 11 near the photoresist coating 13 is greater than that of the surface of the anti-reflective coating 11 near the photoresist coating 13. This avoids the excessive hydrophilicity of the anti-reflective coating 11 affecting the pattern and adhesion of the photoresist coating 13, thereby affecting the pattern of the etched pattern 141 on the semiconductor substrate 10 manufactured using the photoresist coating 13 and impacting the function of the semiconductor structure.

[0045] This invention also provides a semiconductor structure manufactured by the semiconductor structure manufacturing method described in any of the foregoing embodiments.

[0046] The explanation of the semiconductor structure can be found in the explanation of the manufacturing method of the aforementioned semiconductor structure, and will not be repeated here.

[0047] This invention also provides an electronic device including the semiconductor structure described in any of the foregoing embodiments. For example, the electronic device includes at least one of a smartphone, computer, tablet computer, wearable smart device, artificial intelligence device, and power bank. Here, the specific use of the electronic device is not limited, as long as the electronic device includes the aforementioned semiconductor structure.

[0048] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0049] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A method for manufacturing a semiconductor structure, characterized in that, include: Provide semiconductor substrates; An anti-reflective coating is formed on the semiconductor substrate, wherein the material of the anti-reflective coating includes SiON or SiN; the material of the anti-reflective coating includes silicon covalent bonds; Oxygen-containing gas is introduced into the reaction chamber, and the power supply to the reaction chamber is turned on. The oxygen-containing gas reacts with the silicon covalent bonds on the surface of the antireflective coating, and the silicon covalent bonds on the surface of the antireflective coating near the photoresist coating are reduced. The oxygen-containing gas includes oxygen; The photoresist coating is formed on the anti-reflective coating; After the anti-reflective coating is formed and before the oxygen-containing gas is introduced into the reaction chamber, the method for manufacturing the semiconductor structure further includes: heating the reaction chamber to raise the temperature of the reaction chamber to 280-480°C. The oxygen flow rate is 100-1500 sccm, and the oxygen is introduced into the reaction chamber for 1-20 seconds. While oxygen is being introduced into the reaction chamber, argon and / or helium are also introduced into the reaction chamber at a flow rate of 1500–3000 sccm.

2. The method for manufacturing a semiconductor structure according to claim 1, characterized in that, Introducing the oxygen-containing gas into the reaction chamber and turning on the power supply to the reaction chamber includes: Oxygen is introduced into the reaction chamber, and radio frequency power is provided to the reaction chamber.

3. The method for manufacturing a semiconductor structure according to claim 2, characterized in that, The pressure in the reaction chamber is 0.1–15.0 Torr; The radio frequency power is 10 to 800W; the duration of providing radio frequency power to the reaction chamber is 3 to 20 seconds.

4. The method for manufacturing a semiconductor structure according to claim 1, characterized in that, The reaction chamber can be heated using a nozzle, and the distance between the nozzle and the base of the reaction chamber is 150 to 500 mils.

5. The method for manufacturing a semiconductor structure according to claim 1, characterized in that, The method for forming the antireflective coating includes: plasma-enhanced chemical vapor deposition.

6. The method for manufacturing a semiconductor structure according to claim 1, characterized in that, Before forming the anti-reflective coating, the method for manufacturing the semiconductor structure further includes: forming a layer to be etched on the semiconductor substrate; After forming the photoresist coating, the method for manufacturing the semiconductor structure further includes: exposing and developing the photoresist coating to obtain a photoresist pattern; and sequentially etching the anti-reflective coating and the layer to be etched to obtain an etched pattern.

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