具有输入侧谐波终端电路的功率晶体管装置和放大器

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By designing a harmonic frequency termination circuit that includes energy storage circuitry in the RF amplifier, the problem of power transistor devices generating undesirable signal energy under harmonic conditions is solved, the amplifier performance is improved, and the negative impact of circuit interactions is avoided.

CN114614779BActive Publication Date: 2026-07-17NXP USA INC

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: NXP USA INC
Filing Date: 2022-02-25
Publication Date: 2026-07-17

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Abstract

一种RF放大器包括放大器输入，具有晶体管和晶体管输入端的晶体管管芯，耦合在所述放大器输入与所述晶体管输入端之间的基本频率阻抗匹配电路，以及耦合在所述晶体管输入端与接地参考节点之间的谐波频率终端电路。所述谐波频率终端电路包括耦合在所述晶体管输入端与第一节点之间的第一电感和耦合在所述第一节点与所述接地参考节点之间的储能电路。所述储能电路包括耦合在所述第一节点与所述接地参考节点之间的第一电容和耦合在所述第一节点与所述接地参考节点之间的第二电感。所述储能电路被配置成分流二次谐波频率下或约二次谐波频率下的信号能量，同时对所述RF放大器的基本工作频率下的信号能量呈现为开路。

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