Polishing system apparatus and method for defect reduction at substrate edges
CN114619359BActive Publication Date: 2026-07-03APPLIED MATERIALS INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-11-24
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
During chemical mechanical polishing, nano- and micron-sized particulate contaminants on the inclined edges of the substrate can easily transfer to the polishing interface, leading to scratch defects and affecting the reliability and yield of semiconductor devices.
Method used
The fluid delivery component in the carrier loading station is used to guide the excitation fluid through the nozzle toward the inclined edge of the substrate to remove the adhering dielectric material particles and prevent contamination of the polishing interface.
Benefits of technology
It effectively reduces the occurrence of scratches during the polishing process, thereby improving the reliability and yield of semiconductor devices.
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Smart Images
Figure CN114619359B_ABST
Abstract
The embodiments described herein include carrier loading stations and associated methods that can be used to advantageously remove nanoscale and / or microscale particles adhering to the sloping edges of a substrate prior to polishing. By removing such contaminants (e.g., loosely adhered dielectric material particles) from the sloping edges, contamination of the polishing interface can be avoided, thereby preventing and / or substantially reducing scratch-related defects associated with said contamination.
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