Deposition apparatus

Abstract

An embodiment of the present invention relates to a deposition apparatus, which can include a susceptor defining a plurality of susceptor holes, an electrostatic chuck disposed on the susceptor and defining a plurality of electrostatic chuck holes, and a plurality of pins connected through the susceptor and the electrostatic chuck, the plurality of pins each including a first portion disposed inside the plurality of electrostatic chuck holes and a second portion disposed inside the plurality of susceptor holes, the first portion including a first base portion and a first cooler disposed inside the first base portion, whereby the temperature of an upper portion of the deposition apparatus can be uniformly maintained, thereby preventing the occurrence of defects such as stains in a thin film manufactured by the deposition apparatus.

Description

Technical Field

[0001] The present invention relates to a deposition apparatus and an apparatus for manufacturing a display panel including the same, and more specifically, to a deposition apparatus capable of producing a thin film that prevents defects such as stains and an apparatus for manufacturing a display panel including the same. Background Technology

[0002] Electronic devices such as smartphones, tablets, laptops, and smart TVs are under development. These devices include display devices to provide information. The display device repeatedly includes a thin-film deposition process that forms a thin film of a predetermined material on a substrate surface, a photolithography process that exposes a selected portion of the thin film, and a dry or wet etching process that removes the exposed portion of the thin film to pattern it into a desired shape. The dry etching process, starting with the thin-film deposition process, is typically performed within a closed process chamber. Each process chamber may contain electrostatic chucks for fixing the substrate and coolers for regulating the process temperature. Summary of the Invention

[0003] The purpose of this invention is to provide a deposition apparatus that can eliminate temperature unevenness on the surface of a clamping substrate, and an apparatus for manufacturing a display panel including the same.

[0004] An embodiment of the present invention relates to a deposition apparatus comprising: a substrate having a plurality of substrate holes; an electrostatic chuck disposed on the substrate and having a plurality of electrostatic chuck holes; and a plurality of pins passing through the substrate and the electrostatic chuck for connection, wherein each of the plurality of pins comprises: a first portion disposed inside the plurality of electrostatic chuck holes; and a second portion disposed inside the plurality of substrate holes, wherein the first portion comprises: a first base; and a first cooler disposed inside the first base.

[0005] The second part may include: a second base; and a second cooler disposed inside the second base.

[0006] The electrostatic chuck may include: a chuck body; a first insulating layer disposed on the chuck body; a plurality of electrodes disposed on the first insulating layer; and a second insulating layer disposed on the plurality of electrodes.

[0007] The first part may include a plurality of pin insulating layers and a plurality of pin electrodes disposed between the plurality of pin insulating layers.

[0008] It is possible to drive the plurality of pin electrodes and the plurality of electrodes individually.

[0009] The second part may include ceramic or metal.

[0010] Alternatively, an embodiment of the deposition apparatus may further include: a plate disposed below the substrate, thereby being spaced apart from the electrostatic chuck that sandwiches the substrate therebetween, the plurality of pins protruding from the upper surface of the plate.

[0011] Alternatively, the plate may include a plate cooler configured inside.

[0012] Alternatively, an embodiment of the deposition apparatus may further include a drive unit disposed at the lower part of the plate, which changes the angles of the plate, the support, and the electrostatic chuck.

[0013] Alternatively, the support may include: a support body; and a heater disposed inside the support body.

[0014] The electrostatic chuck may include an electrostatic chuck base and an electrostatic chuck cooler disposed inside the electrostatic chuck base.

[0015] It is possible to drive the first cooler and the electrostatic chuck cooler separately.

[0016] The first cooler may include a cooling line and a refrigerant or cooling gas circulating inside the cooling line.

[0017] An embodiment of the present invention relates to a deposition apparatus comprising: a plate including a plurality of pins projecting upward; a support disposed on the plate and penetrated by the plurality of pins; and an electrostatic chuck disposed on the support and penetrated by the plurality of pins, each of the plurality of pins including: a first base; and a first cooler disposed inside the first base, the first base including a plurality of pin insulating layers and a plurality of pin electrodes disposed between the plurality of pin insulating layers.

[0018] Alternatively, the first base and the first cooler may overlap with the electrostatic chuck in a direction that intersects with the upper direction.

[0019] Alternatively, the electrostatic chuck may have an electrostatic chuck hole for configuring the plurality of pins, and the first base and the first cooler may be configured within the electrostatic chuck hole.

[0020] An embodiment of the present invention relates to a display panel manufacturing apparatus comprising: a cavity; a deposition head disposed inside the cavity and for spraying a deposition material; and a support member disposed below the deposition head and for supporting a target substrate. The support member comprises: a substrate holder having a plurality of substrate holder holes; an electrostatic chuck disposed on the substrate holder and having a plurality of electrostatic chuck holes; and a plurality of pins passing through the substrate holder and the electrostatic chuck for connection. Each of the plurality of pins comprises: a first portion disposed inside the plurality of electrostatic chuck holes; and a second portion disposed inside the plurality of substrate holder holes. The first portion comprises: a first base; and a first cooler disposed inside the first base.

[0021] Alternatively, an embodiment of the present invention may include a display panel manufacturing apparatus further comprising: a mask disposed between the support member and the deposition head.

[0022] Alternatively, the object substrate may be disposed on the electrostatic chuck and supported, and the support component may further include a drive unit that tilts the object substrate at a predetermined angle to clamp the object substrate.

[0023] Alternatively, the support component may further include: a plate disposed at the lower part of the support, thereby being spaced apart from the electrostatic chuck that sandwiches the support therebetween, the plurality of pins protruding from the upper surface of the plate.

[0024] (Invention Effects)

[0025] In a deposition apparatus according to an embodiment of the present invention, not only does the electrostatic chuck that clamps the substrate include a cooler, but the upper part of the lifting pin that is inserted into the hole defined in the electrostatic chuck also includes a cooler. This can eliminate temperature unevenness on the surface of the clamped substrate and prevent the formation of stains or the like in the film formed therefrom due to temperature unevenness, thereby improving the reliability of the display panel. Attached Figure Description

[0026] Figure 1 This is a perspective view of a deposition apparatus according to an embodiment of the present invention.

[0027] Figure 2 This is an exploded perspective view of a deposition apparatus according to an embodiment of the present invention.

[0028] Figures 3a to 3d This is a perspective view showing a substrate and deposition apparatus according to an embodiment of the present invention.

[0029] Figure 4 This is a cross-sectional view of an electrostatic chuck according to an embodiment of the present invention.

[0030] Figure 5 This is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

[0031] Figure 6 and Figure 7 This is a cross-sectional view of a portion of a deposition apparatus according to an embodiment of the present invention.

[0032] Figure 8 This is a cross-sectional view of a deposition apparatus according to other embodiments of the present invention.

[0033] Figure 9 This is a cross-sectional view of a portion of a deposition apparatus according to an embodiment.

[0034] Figure 10 This is a plan view of a display panel manufacturing apparatus according to an embodiment of the present invention.

[0035] Figure 11 This is a cross-sectional view of an object substrate processed by a display panel manufacturing apparatus according to an embodiment of the present invention.

[0036] Figure 12a These are photographs of thin films manufactured using a deposition apparatus according to an embodiment of the present invention.

[0037] Figure 12b These are photographs of thin films produced using the deposition apparatus of the comparative example.

[0038] (Symbol Explanation)

[0039] EA: Deposition apparatus; SC: Substitute; ESC: Electrostatic chuck; PN: Multiple pins; PT: Plate; CL-PN: Pin cooler. Detailed Implementation

[0040] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In this specification, when a constituent element (or region, layer, part, etc.) is located on, connected to, or combined with other constituent elements, it means that it can be directly configured / connected / combined with other constituent elements, or a third constituent element may be configured therein.

[0041] The same symbols refer to the same constituent elements. Furthermore, in the various figures, the thickness, proportions, and dimensions of the constituent elements are exaggerated for the purpose of effectively illustrating the technical content. "And / or" includes all combinations that can define the related constituent elements.

[0042] The terms "first," "second," etc., can be used to describe various constituent elements, but the constituent elements described should not be limited to these terms. These terms are used only to distinguish one constituent element from others. For example, without departing from the scope of this invention, a first constituent element can be named a second constituent element, and similarly, a second constituent element can be named a first constituent element. Singular expressions include plural expressions unless explicitly stated otherwise in the text.

[0043] Furthermore, terms such as "below," "on the lower side," "above," and "on the upper side" are used to explain the connection relationships between the components in the diagram. These terms are relative concepts and are explained based on the direction shown in the diagram.

[0044] Terms such as “including” or “having” should be understood as referring to the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof as recorded in the instruction manual, and do not preclude the existence or additional possibilities of one or more other features, figures, steps, operations, constituent elements, components, or combinations thereof.

[0045] Hereinafter, with reference to the accompanying drawings, a deposition apparatus and a method for manufacturing a display panel based thereon according to an embodiment of the present invention will be described.

[0046] Figure 1 This is a perspective view of a deposition apparatus according to an embodiment of the present invention. Figure 2 This is an exploded perspective view of a deposition apparatus according to an embodiment of the present invention.

[0047] Reference Figure 1 and Figure 2 The deposition apparatus EA includes a plate PT, a support SC disposed on the plate PT, an electrostatic chuck ESC disposed on the support SC, and a drive unit DRP. The electrostatic chuck ESC may have a shape that is embedded in a predetermined space SC-H defined in the support SC. The electrostatic chuck ESC may be embedded in the predetermined space SC-H defined in the upper part of the support SC, thereby being spaced apart from the plate PT which sandwiches the support SC therebetween.

[0048] Electrostatic chucks (ESCs) can utilize electrostatic induction to generate electrostatic forces, thereby chucking or dechucking the substrate (SUB) during the deposition process.

[0049] The electrostatic chuck (ESC) can repeatedly perform the following process: clamping the substrate SUB for processing the substrate SUB, and releasing the substrate SUB after processing the substrate SUB for the next processing step.

[0050] The electrostatic chuck (ESC) can clamp the substrate SUB located on the upper part of the ESC. However, it is not limited to this; the substrate SUB can be clamped in various directions, such as the opposite direction of gravity or the vertical direction. The substrate SUB can be configured to allow the pixel definition film (PDL) to be positioned (see [reference]). Figure 11 The substrate SUB is processed with the substrate facing upwards. For example, a deposition source including the deposited material can be configured on the upper part of the electrostatic chuck ESC.

[0051] The deposited material can be, for example, a luminescent material that constitutes the luminescent layer. However, the deposited material can be selected without limitation as long as it is a material that can be deposited through a deposition process such as a sputter. For example, the deposited material can be a metallic material that forms an electrode or an organic or inorganic material that forms an insulating layer.

[0052] The support SC can be configured to control the temperature of an internal electrostatic chuck ESC and to position the electrostatic chuck ESC and the substrate SUB clamped therein at various angles. The electrostatic chuck ESC is disposed on the support SC. More specifically, the electrostatic chuck ESC can be disposed within a predetermined space SC-H defined in the upper part of the support SC.

[0053] A heater for controlling the temperature of the substrate SUB during the deposition process can be provided inside the substrate SC. Alternatively, a flow path for a coolant can be provided inside the substrate SC to control the temperature of the substrate SUB, or a flow path for supplying a back gas (e.g., helium) can be provided to efficiently transfer heat from the substrate SC to the substrate SUB. Through the flow path provided in the substrate SC, helium can be transferred to the interface side between the electrostatic chuck ESC and the substrate SUB.

[0054] The support SC may include metal. For example, the support SC may include aluminum.

[0055] The plate PT may include multiple pins PN disposed below the support SC and protruding from the upper surface of the plate PT body. The plate PT body may support the support SC and the electrostatic chuck ESC. The plate PT may, for example, include ceramic or metal.

[0056] It can be configured to define through-holes in both the support SC and the electrostatic chuck ESC, allowing multiple pins PN protruding from the board PT to pass through these through-holes. The through-holes can be defined corresponding to multiple pins PN. Figure 2 The example shown is an 11-pin PN through-support SC and electrostatic chuck ESC, but it is not limited to this. The number and arrangement of multiple pins PN can vary depending on the size and shape of the substrate SUB to be deposited.

[0057] Multiple substrate holes SC-OP can be defined in the substrate holder SC, and multiple electrostatic chuck holes ESC-OP can be defined in the electrostatic chuck ESC. Multiple pins PN protruding from the substrate PT can protrude, at least partially, towards the upper surface of the electrostatic chuck ESC, through the multiple substrate holes SC-OP defined in the substrate holder SC and the multiple electrostatic chuck holes ESC-OP defined in the electrostatic chuck ESC. Thus, the substrate SUB before the deposition process can be supported on the multiple pins PN, and the substrate SUB can be positioned on the electrostatic chuck ESC by lowering the multiple pins PN. Then, for the substrate SUB after the deposition process, the multiple pins PN can be raised to move the substrate SUB away from the electrostatic chuck ESC, thereby transferring it to the outside of the processing chamber. That is, multiple pins PN can be used for loading and unloading the substrate SUB.

[0058] Figures 3a to 3d This is a perspective view showing a substrate and deposition apparatus according to an embodiment of the present invention.

[0059] Reference Figure 1 as well as Figures 3a to 3d In one embodiment of the present invention, the deposition apparatus EA can clamp the substrate SUB in various directions after it is placed on the upper surface of the electrostatic chuck ESC. The drive unit DRP can be connected to the lower part of the plate PT, thereby changing the angles of the plate PT, the support SC, and the electrostatic chuck ESC. Through the operation of the drive unit DRP, the orientation of the upper surface of the electrostatic chuck ESC and the orientation of the substrate SUB clamped by the electrostatic chuck ESC can be changed.

[0060] Reference Figure 1 and Figure 3a The deposition apparatus EA can clamp the substrate SUB so that its upper surface faces the first direction DR1. The substrate SUB can be configured with its upper surface facing the first direction DR1, thereby processing the substrate SUB through a deposition process.

[0061] Reference Figure 1 , Figure 3b and Figure 3c The deposition apparatus EA can clamp the substrate SUB to tilt it at predetermined angles AG1 and AG2. For example, as... Figure 3b As shown, the deposition apparatus EA can clamp the substrate SUB so that it is tilted at a first angle AG1. The first angle AG1 can be the angle between one side of the electrostatic chuck ESC that the substrate SUB contacts and the plane defined by the first direction DR1 and the second direction DR2. The first angle AG1 can be an obtuse angle. The substrate SUB can be clamped by the electrostatic chuck ESC and processed in a state of tilt at the first angle AG1.

[0062] Or, such as Figure 3c As shown, the deposition apparatus EA can clamp the substrate SUB so that it is tilted at a second angle AG2. The second angle AG2 can be the angle between one side of the electrostatic chuck ESC that the substrate SUB contacts and the plane defined by the first direction DR1 and the second direction DR2. The second angle AG2 can be an acute angle. The substrate SUB can be clamped by the electrostatic chuck ESC and processed while tilted at the second angle AG2.

[0063] Or, such as Figure 3d As shown, the deposition apparatus EA can clamp the substrate SUB in the opposite direction of gravity. The deposition apparatus EA can clamp the substrate SUB so that its upper surface faces downward. After the substrate SUB is clamped by the electrostatic chuck ESC and configured with its upper surface facing in the opposite direction of the third direction DR3, it is processed by the deposition process.

[0064] Figure 4 This is a cross-sectional view of an electrostatic chuck according to an embodiment of the present invention.

[0065] Reference Figure 4 An electrostatic chuck (ESC) may include a chuck body (BS), a first insulating layer (IL1), a second insulating layer (IL2), multiple anodes (PE), and multiple cathodes (NE).

[0066] The chuck body BS can be a base frame comprising a material having predetermined rigidity to provide electrostatic discharge (ESC) for the chuck. The chuck body BS can include ceramic. However, this is illustrative, and the material of the chuck body BS according to an embodiment of the invention is not limited thereto. For example, the chuck body BS according to an embodiment of the invention can include aluminum (Al), titanium (Ti), stainless steel, alumina (Al2O3), yttrium oxide (Y2O3), or aluminum nitride. On the other hand, in Figure 4 The illustration shows a chuck body BS positioned below the first insulating layer IL1, but it is not limited to this configuration; the chuck body BS can also be positioned above the second insulating layer IL2. The chuck body BS can be a mounting substrate SUB (…). Figure 1 The composition of the base surface of ).

[0067] A first insulating layer IL1 may be disposed on the chuck body BS. The first insulating layer IL1 may include a material with higher heat resistance and chemical stability than the second insulating layer IL2. For example, the first insulating layer IL1 may include yttrium oxide (Y2O3). However, this is an example, and the material of the first insulating layer IL1 involved in one embodiment of the present invention is not limited thereto, and may include various materials with heat resistance and chemical stability.

[0068] The thickness of the first insulating layer IL1 can be less than the thickness of the chuck body BS. The thickness of the first insulating layer IL1 can be from 80 μm to 100 μm. The thickness of the chuck body BS can be from 10 mm to 20 mm.

[0069] The second insulating layer IL2 may be disposed on the first insulating layer IL1. The second insulating layer IL2 may include a material with higher thermal conductivity and dielectric properties than the first insulating layer IL1. For example, the second insulating layer IL2 may include aluminum oxide (Al2O3). However, this is an example, and the material of the second insulating layer IL2 involved in one embodiment of the present invention is not limited thereto, and may include various materials with thermal conductivity.

[0070] The thickness of the second insulating layer IL2 can be greater than the thickness of the first insulating layer IL1. The thickness of the second insulating layer IL2 can be less than the thickness of the chuck body BS. The thickness of the second insulating layer IL2 can be from 110 μm to 150 μm.

[0071] Multiple electrodes PE and NE can be disposed between the first insulating layer IL1 and the second insulating layer IL2. The multiple electrodes PE and NE may include multiple anodes PE and multiple cathodes NE. The multiple anodes PE and multiple cathodes NE can be disposed between the first insulating layer IL1 and the second insulating layer IL2. The second insulating layer IL2 may cover the multiple anodes PE and multiple cathodes NE. The multiple anodes PE and multiple cathodes NE may have different polarities. The multiple anodes PE and multiple cathodes NE can be disposed alternately.

[0072] The plurality of anodes PE and the plurality of cathodes NE may each comprise tungsten (W). However, this is an example, and the materials of the plurality of anodes PE and the plurality of cathodes NE involved in one embodiment of the invention are not limited thereto. For example, the plurality of anodes PE and the plurality of cathodes NE may each comprise silver (Ag) or copper (Cu).

[0073] Multiple anodes (PE) and multiple cathodes (NE) can each have the same thickness. The thickness of each of the multiple anodes (PE) and multiple cathodes (NE) can be less than that of the first insulating layer IL1 and the second insulating layer IL2. The thickness of each of the multiple anodes (PE) and multiple cathodes (NE) can be from 25 μm to 35 μm.

[0074] A positive DC voltage can be applied to multiple anodes PE. A first electrostatic force can be generated between the multiple anodes PE and the substrate SUB. A negative DC voltage can be applied to multiple cathodes NE. A second electrostatic force can be generated between the multiple cathodes NE and the substrate SUB. The first and second electrostatic forces can be electrostatic forces. An embodiment of the present invention relates to an electrostatic chuck ESC that can be a bipolar electrostatic chuck. However, this is illustrative, and the type of electrostatic chuck ESC according to an embodiment of the present invention is not limited to this. For example, an electrostatic chuck ESC can be a monopolar electrostatic chuck. In this case, DC voltages of the same polarity can be applied to the multiple anodes PE and multiple cathodes NE of the electrostatic chuck ESC.

[0075] When a positive DC voltage is applied to each of the multiple anodes PE, the upper portion of the first region of the substrate SUB, which overlaps with the multiple anodes PE, can be charged with a negative potential when viewed in a plane. An electrostatic force due to charge can be generated between the multiple anodes PE and the first region.

[0076] When the negative DC voltage is applied to each of the multiple cathodes NE, the upper portion of the second region of the substrate SUB, which overlaps with each of the multiple cathodes NE, can be charged with a positive potential when viewed in a plane. An electrostatic force due to the charge can be generated between the multiple cathodes NE and the second region.

[0077] Figure 5 This is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention. Figure 6 and Figure 7 This is a cross-sectional view of a portion of a deposition apparatus according to an embodiment of the present invention. Figure 8 This is a cross-sectional view of a deposition apparatus according to other embodiments of the present invention. Figure 5 The text shows the relationship with... Figure 2 The cross section corresponding to line II′. Figure 6 and Figure 7 The enlarged image shows Figure 5 Area A. Figure 8 The text shows the relationship with... Figure 2 The cross section corresponding to line II′.

[0078] Reference Figure 2 , Figure 5 and Figure 6In one embodiment of the deposition apparatus, multiple pins PN protrude from the plate PT, and the support SC and electrostatic chuck ESC can be coupled through the multiple pins PN. A pin cooler CL-PN can be configured inside at least a portion of the multiple pins PN. For example, in Figure 5 and Figure 6 The diagram shows the pin cooler CL-PN configured inside the first part PN1, but the pin cooler CL-PN can also be configured inside the first part PN1 and the second part PN2 respectively.

[0079] The multiple pins PN each include a first part PN1 and a second part PN2. The first part PN1 may be the portion that overlaps with the electrostatic chuck ESC in cross-section, and the second part PN2 may be the portion that overlaps with the support SC in cross-section. The first part PN1 may be in the third-direction DR3 ( Figure 2 The first part PN1 may be the portion that overlaps with the electrostatic chuck ESC on the first part PN1, and the second part PN2 may be the portion that overlaps with the support SC on the third-direction DR3. That is, the first part PN1 may be the portion disposed within the electrostatic chuck hole ESC-OP defined in the electrostatic chuck ESC, and the second part PN2 may be the portion disposed within the support hole SC-OP defined in the support SC.

[0080] An electrostatic chuck cooler (CL-ESC) can be configured inside the electrostatic chuck (ESC). The CL-ESC can be located inside the base of the electrostatic chuck (BS-ESC). The CL-ESC can be a cooling line that provides a path for circulating cooling material. The CL-ESC may include, for example, a cooling line and a refrigerant or cooling gas circulating within it. The CL-ESC can be a cooling line that circulates a solvent such as Galden (perfluoropolyether fluid) solution or a cooling gas such as argon or hydrogen. The CL-ESC can, for example, be configured within the chuck body (BS) of the electrostatic chuck (ESC). Figure 4 (the interior of)

[0081] A pin cooler CL-PN is configured inside the first portion PN1 of a plurality of pins PN. The first portion PN1 may include a first base BS-PN1, and the pin cooler CL-PN may be configured inside the first base BS-PN1.

[0082] A CL-PN (Combined Lead-in Cooler) can be a cooling line that provides a path for circulating cooling material. The CL-PN may include, for example, a cooling line and a refrigerant or cooling gas circulating within it. The CL-PN can be a cooling line that circulates a solvent such as Galden solution or a cooling gas such as argon or hydrogen.

[0083] The pin cooler CL-PN and the electrostatic chuck cooler CL-ESC can be driven independently. That is, each can have its own drive unit for the pin cooler CL-PN and the electrostatic chuck cooler CL-ESC. By driving the pin cooler CL-PN and the electrostatic chuck cooler CL-ESC independently, the temperatures of the multiple pin PN sections and the electrostatic chuck ESC sections can be controlled independently. However, this is not a limitation; the pin cooler CL-PN and the electrostatic chuck cooler CL-ESC can also be driven together by a single drive unit.

[0084] The second portion PN2 of the multiple pins PN can include the same material as the plate PT. For example, the second portion PN2 can include ceramic or metal. The second portion PN2 can have a shape integral with the plate PT. That is, the second portion PN2 can be formed to extend upward from the upper surface of the plate PT.

[0085] One embodiment of the deposition apparatus EA may include a fixed support SC and an electrostatic chuck ESC, and a plurality of pins PN utilized for loading and unloading a substrate SUB. Each of the plurality of pins PN may include a first portion PN1 and a second portion PN2, wherein the first portion PN1 includes a pin cooler CL-PN disposed inside the pin PN, and the second portion PN2 comprises the same material as the substrate PT. This prevents temperature differences between the area where the electrostatic chuck ESC is disposed and the area where the plurality of pins PN are disposed, and also prevents contamination in the layer formed by the deposition process.

[0086] In existing deposition apparatuses, a cooler is incorporated inside the electrostatic chuck to reduce the temperature applied to the substrate in order to regulate the temperature of the deposition process. However, the portion of the electrostatic chuck with multiple pins lacks a cooler, resulting in a higher temperature at the chuck hole compared to other portions, and causing contamination on the substrate due to temperature differences. An embodiment of the deposition apparatus EA of the present invention utilizes a pin cooler CL-PN disposed inside the first portion PN1 of the multiple pins PN, which regulates the temperature of the ESC-OP portion of the electrostatic chuck with multiple pins PN as well, thereby preventing contamination on the substrate. This improves the reliability of display panels manufactured using the deposition apparatus.

[0087] Refer to together Figure 2 , Figure 5 and Figure 7 As mentioned above, a pin cooler can also be configured inside the second part PN2 of the multiple pins PN. For example... Figure 7As shown, the second portion PN2 may include a second base BS-PN2. A first pin cooler CL-PN1 may be disposed inside the first base BS-PN1 of the first portion PN1 in the plurality of pins PN, and a second pin cooler CL-PN2 may be disposed inside the second base BS-PN2 of the second portion PN2 in the plurality of pins PN. The second pin cooler CL-PN2 may be a cooling line that provides a path for circulating cooling material. The second pin cooler CL-PN2 may include, for example, a cooling line and a refrigerant or cooling gas circulating within the cooling line. The second pin cooler CL-PN2 may be a cooling line that circulates a solvent such as Galden solution or a cooling gas such as argon or hydrogen. Figure 7 As shown, the first pin cooler CL-PN1 and the second pin cooler CL-PN2 can have an integral shape. The first pin cooler CL-PN1 and the second pin cooler CL-PN2 can be connected, and the first pin cooler CL-PN1 can extend from the second pin cooler CL-PN2. However, this is not a limitation; the first pin cooler CL-PN1 and the second pin cooler CL-PN2 may not be connected, and can be configured with the first base BS-PN1 and the second base BS-PN2 spaced apart.

[0088] Reference Figure 8 In one embodiment, the deposition apparatus EA may further include a plate cooler CL-PT disposed inside a plate PT. The plate cooler CL-PT may be a cooling line that provides a path for circulating cooling material. The plate cooler CL-PT can reduce the temperature of the plate PT, thereby controlling excessive temperature rise of the deposition apparatus EA during the deposition process. The plate cooler CL-PT may include, for example, a cooling line and a refrigerant or cooling gas circulating within the cooling line. The plate cooler CL-PT may be a cooling line that circulates a solvent such as Galden solution or a cooling gas such as argon or hydrogen. The plate cooler CL-PT may be driven separately from the pin cooler CL-PN and the electrostatic chuck cooler CL-ESC. Alternatively, the plate cooler CL-PT may be driven together with at least one of the same drive units as the pin cooler CL-PN and the electrostatic chuck cooler CL-ESC.

[0089] Figure 9 This is a cross-sectional view of a portion of a deposition apparatus according to one embodiment. Figure 9 The diagram shows a portion of the plate PT and a cross-section of any one of the multiple pins PN protruding from the upper part of the plate PT body.

[0090] Reference Figure 9In one embodiment of the deposition apparatus EA, the pin PN protruding from the plate PT may include a first part PN1 and a second part PN2. The first part PN1 may include a pin body BS-P, a first pin insulating layer IL1-P, a second pin insulating layer IL2-P, and multiple pin electrodes PE-P and NE-P.

[0091] The pin body portion BS-P may include a material having a predetermined rigidity. The pin body portion BS-P may include ceramic. However, this is illustrative, and the material of the pin body portion BS-P according to an embodiment of the present invention is not limited thereto. For example, the pin body portion BS-P according to an embodiment of the present invention may include aluminum (Al), titanium (Ti), stainless steel, alumina (Al2O3), yttrium oxide (Y2O3), or aluminum nitride. On the other hand, in Figure 9 The example illustrates a case where the pin body BS-P is positioned below the first pin insulation layer IL1-P, but it is not limited to this; the pin body BS-P can also be positioned above the second pin insulation layer IL2-P. The pin body BS-P can be connected to the electrostatic chuck ESC ( Figure 4 ) chuck body BS ( Figure 4 The corresponding part. In one embodiment, the pin cooler CL-PN is disposed inside the first part PN1. Figure 6 ) or the first pin cooler CL-PN1 ( Figure 7 It can be configured inside the pin body BS-P.

[0092] The first pin insulating layer IL1-P can be disposed on the pin body portion BS-P. The first pin insulating layer IL1-P may include a material with higher heat resistance and chemical stability than the second pin insulating layer IL2-P. For example, the first pin insulating layer IL1-P may include yttrium oxide (Y2O3). However, this is an example, and the material of the first pin insulating layer IL1-P involved in one embodiment of the present invention is not limited thereto, and may include various materials with heat resistance and chemical stability. The first pin insulating layer IL1-P may be associated with an electrostatic chuck (ESC). Figure 4 The first insulating layer IL1 () Figure 4 The corresponding part.

[0093] The second pin insulating layer IL2-P can be disposed on the first pin insulating layer IL1-P. The second pin insulating layer IL2-P may include a material with higher thermal conductivity and dielectric properties than the first pin insulating layer IL1-P. For example, the second pin insulating layer IL2-P may include aluminum oxide (Al2O3). However, this is an example, and the material of the second pin insulating layer IL2-P according to one embodiment of the invention is not limited thereto and may include various materials with high thermal conductivity. The second pin insulating layer IL2-P may be used with an electrostatic chuck (ESC). Figure 4 The second insulating layer IL2 () Figure 4 The corresponding part.

[0094] Multiple pin electrodes PE-P and NE-P can be disposed between the first pin insulating layer IL1-P and the second pin insulating layer IL2-P. The multiple pin electrodes PE-P and NE-P may include multiple pin anodes PE-P and multiple pin cathodes NE-P. The multiple pin anodes PE-P and multiple pin cathodes NE-P can be disposed between the first pin insulating layer IL1-P and the second pin insulating layer IL2-P. The second pin insulating layer IL2-P can cover the multiple pin anodes PE-P and multiple pin cathodes NE-P. The multiple pin anodes PE-P and multiple pin cathodes NE-P can have different polarities. The multiple pin anodes PE-P and multiple pin cathodes NE-P can be disposed alternately.

[0095] The multiple pin anodes PE-P and multiple pin cathodes NE-P may each comprise tungsten (W). However, this is illustrative, and the materials of the multiple pin anodes PE-P and multiple pin cathodes NE-P in one embodiment of the invention are not limited thereto. For example, the multiple pin anodes PE-P and multiple pin cathodes NE-P may each comprise silver (Ag) or copper (Cu).

[0096] A positive DC voltage can be applied to the multiple pin anodes PE-P. A first electrostatic force can be generated between the multiple pin anodes PE-P and the substrate SUB. A negative DC voltage can be applied to the multiple pin cathodes NE-P. A second electrostatic force can be generated between the multiple pin cathodes NE-P and the substrate SUB. The first and second electrostatic forces can be electrostatic forces. The first portion PN1 can be a bipolar electrostatic chuck. However, this is an example, and the first portion PN1 can be a monopolar electrostatic chuck. In this case, a DC voltage of the same polarity can be applied to the multiple pin anodes PE-P and the multiple pin cathodes NE-P of the first portion PN1.

[0097] When a positive DC voltage is applied to each of the multiple pin anodes PE-P, the upper portion of the first pin region of the substrate SUB, which overlaps with the multiple pin anodes PE-P respectively, can be charged with a negative potential when viewed in a plane. An electrostatic force caused by the charge can be generated between the multiple pin anodes PE-P and the first pin region.

[0098] When the negative DC voltage is applied to the multiple pin cathodes NE-P respectively, the upper portion of the second pin region of the substrate SUB, which overlaps with the multiple pin cathodes NE-P respectively, can be positively charged when viewed in a plane. An electrostatic force caused by the charge can be generated between the multiple pin cathodes NE-P and the second pin region.

[0099] It can be configured with the electrostatic chuck ESC ( Figure 4 Multiple electrodes inside PE, NE ( Figure 4 The multiple pin electrodes PE-P and NE-P, which are disposed inside multiple pins PN, can be driven separately. That is, a separate drive unit can be provided to drive the multiple pin electrodes PE-P and NE-P, and a separate drive unit to drive the multiple electrodes PE and NE. By independently driving the multiple pin electrodes PE-P and NE-P and the multiple electrodes PE and NE, the electrostatic force of the multiple pin PN section and the electrostatic chuck ESC section can be independently controlled. However, it is not limited to this; multiple pin electrodes PE-P and NE-P and multiple electrodes PE and NE can also be driven together by a single drive unit.

[0100] Figure 10 This is a plan view of a display panel manufacturing apparatus according to an embodiment of the present invention. Figure 11 This is a cross-sectional view of an object substrate processed by a display panel manufacturing apparatus according to an embodiment of the present invention.

[0101] Reference Figure 10 The display panel manufacturing apparatus (DPD) may include a cavity (CHB), a deposition head (SH), a stage (STG), a mask assembly (MA), and a support component. The support component may include a plate (PT), a support (SC), and an electrostatic chuck (ESC). The support component may also include a drive unit (DRP) connected to the plate (PT).

[0102] The cavity CHB provides a sealed space. The deposition head SH, stage STG, mask assembly MA, electrostatic chuck ESC, and drive unit DRP can be configured within the cavity CHB. The cavity CHB may have at least one door GT. The cavity CHB can be opened and closed via the door GT. The substrate SUB can enter and exit through the door GT of the cavity CHB. Although not shown, a temperature control module for adjusting the temperature of the electrostatic chuck ESC and stage STG can also be configured within the cavity CHB.

[0103] The deposition head SH can spray the deposited material DM to the outside. In one embodiment, the deposition head SH can be a spray head. The deposited material DM is a sublimable or vaporizable substance and may include one or more of inorganic, metallic, or organic substances. Taking the case of including organic substances used to fabricate an organic light-emitting layer as an example, the deposited material DM involved in this embodiment will be explained.

[0104] The STG worktable can move the mask assembly MA up and down.

[0105] A mask assembly MA can be mounted on the stage STG. The mask assembly MA may include a mask MK and a housing FR. The mask assembly MA may be opposed to the deposition head SH. The stage STG may overlap with the housing FR of the mask assembly MA to support the mask assembly MA.

[0106] The stage STG may not overlap with the opening HO of the housing FR. That is, the stage STG may be positioned outside the movement path of the deposited material DM supplied from the deposition head SH to the substrate SUB.

[0107] A substrate SUB is positioned below the mask assembly MA. A deposited material DM can be deposited onto the substrate SUB through multiple through-holes OPP.

[0108] The substrate SUB can be processed by clamping it with an electrostatic chuck (ESC) located at the top of the support component. In one embodiment, the substrate SUB can be clamped at a 90-degree angle to the ground before a deposition process is performed. However, this is not a limitation; the orientation of the upper surface of the ESC and the orientation of the substrate SUB clamped by the ESC can be changed by the operation of the drive unit (DRP). The drive unit (DRP) can align the substrate SUB towards the lower part of the mask assembly (MA).

[0109] The substrate SUB may include a conductive material. For example, the substrate SUB may include a circuit element layer. The circuit element layer may include a conductive layer that is conductive.

[0110] Reference Figure 11 In one embodiment of the present invention, the substrate SUB may be part of an organic light-emitting panel including organic light-emitting elements.

[0111] The substrate SUB may have a surface parallel to the surface defined by the first direction DR1 and the second direction DR2. The thickness direction of the substrate SUB may indicate a third direction DR3. The front surface (or upper surface) and the back surface (or lower surface) of the substrate SUB may be distinguished by the third direction DR3. The third direction DR3 may be a direction intersecting the first direction DR1 and the second direction DR2. For example, the first direction DR1, the second direction DR2, and the third direction DR3 may be orthogonal to each other. Furthermore, in this specification, the surface defined by the first direction DR1 and the second direction DR2 is defined as a plane, and "viewing on a plane" may be defined as the view from the third direction DR3.

[0112] The substrate SUB may include a base layer BL, a circuit layer DP-CL, an electrode AE, and a pixel definition film PDL.

[0113] The base layer BL may include a synthetic resin layer. The base layer BL may have a multilayer structure. For example, the base layer BL may have a three-layer structure consisting of a synthetic resin layer, an adhesive layer, and a synthetic resin layer. The synthetic resin layer may be a polyimide-based resin layer. However, this is illustrative, and the types of synthetic resin layers involved in one embodiment of the present invention are not limited thereto. For example, the synthetic resin layer may include at least one of acrylic resins, methacrylate resins, polyisoprene, vinyl resins, epoxy resins, urethane resins, cellulose resins, siloxane resins, polyamide resins, and perylene resins.

[0114] At least one inorganic layer may be formed on the upper surface of the substrate layer BL. The inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, zirconium oxide, and hafnium oxide. The inorganic layer may be formed in multiple layers. Multiple inorganic layers may constitute a barrier layer and / or a buffer layer. In this embodiment, a case is shown where the substrate SUB includes a buffer layer BFL.

[0115] The circuit layer DP-CL may include a buffer layer BFL, a first transistor T1, a second transistor T2, a first insulating layer 10, a second insulating layer 20, a third insulating layer 30, a fourth insulating layer 40, a fifth insulating layer 50, and a sixth insulating layer 60.

[0116] The buffer layer (BFL) can improve the adhesion between the substrate layer (BL) and the semiconductor pattern. The buffer layer (BFL) may include a silicon oxide layer and a silicon nitride layer. The silicon oxide layer and the silicon nitride layer can be stacked alternately.

[0117] Semiconductor patterns can be configured on the buffer layer BFL. The semiconductor patterns may include polycrystalline silicon. However, this is illustrative, and the types of semiconductor patterns involved in one embodiment of the invention are not limited thereto. For example, the semiconductor patterns may include amorphous silicon or metal oxide.

[0118] The semiconductor pattern can exhibit different electrical properties depending on whether it is doped. The semiconductor pattern may include doped and undoped regions. The doped regions may be doped with N-type or P-type impurities. An N-type transistor may include a doped region doped with the N-type impurity. A P-type transistor may include a doped region doped with the P-type impurity.

[0119] The doped region can have higher conductivity than the undoped region, and can essentially function as an electrode or signal line. The undoped region can essentially be equivalent to the active (or channel) region of a transistor. That is, a portion of the semiconductor pattern can be the active region of the transistor, another portion can be the source or drain of the transistor, and a third portion can be a connecting electrode or a connecting signal line.

[0120] The transistor may include a first transistor T1 and a second transistor T2. The source S1, active region A1, and drain D1 of the first transistor T1 may be formed by a semiconductor pattern, and the source S2, active region A2, and drain D2 of the second transistor T2 may be formed by a semiconductor pattern. The source S1, S2 and the drain D1, D2 may extend from the active regions A1, A2 in opposite directions to each other.

[0121] exist Figure 11 A portion of the connection signal line SCL, formed by a semiconductor pattern, is shown. Although not shown separately, the connection signal line SCL can be connected to the drain D2 of the second transistor T2 when viewed in a plane.

[0122] A first insulating layer 10 may be disposed on the buffer layer BFL. The first insulating layer 10 may cover the first transistor T1 and the second transistor T2. The first insulating layer 10 may be an inorganic layer and / or an organic layer, and may have a single-layer structure or a multi-layer structure. In addition to the first insulating layer 10, the insulating layer of the circuit layer DP-CL, described later, may also have an inorganic layer and / or an organic layer, and may also have a single-layer or multi-layer structure.

[0123] Gates G1 and G2 can be disposed on the first insulating layer 10. Gates G1 and G2 can be part of a metal pattern. When viewed in a plane, gates G1 and G2 can overlap with active regions A1 and A2.

[0124] The second insulating layer 20 can be disposed on the first insulating layer 10. The second insulating layer 20 can cover the gates G1 and G2.

[0125] The upper electrode UE can be disposed on the second insulating layer 20. When viewed in a planar view, the upper electrode UE can overlap with the gate G2 of the second transistor T2. The upper electrode UE can be part of a metal pattern. A portion of the gate G2 and the overlapping upper electrode UE can define a capacitor. However, this is illustrative, and the upper electrode UE involved in one embodiment of the invention can be omitted.

[0126] The third insulating layer 30 can be disposed on the second insulating layer 20. The third insulating layer 30 can cover the upper electrode UE. The first connection electrode CNE1 can be disposed on the third insulating layer 30. The first connection electrode CNE1 can be connected to the connection signal line SCL through the contact hole CNT-1 that passes through the first insulating layer 10, the second insulating layer 20 and the third insulating layer 30.

[0127] A fourth insulating layer 40 may be disposed on the third insulating layer 30. A fifth insulating layer 50 may be disposed on the fourth insulating layer 40. The fifth insulating layer 50 may be an organic layer. A second connecting electrode CNE2 may be disposed on the fifth insulating layer 50. The second connecting electrode CNE2 may be connected to the first connecting electrode CNE1 through a contact hole CNT-2 that penetrates the fourth insulating layer 40 and the fifth insulating layer 50.

[0128] The sixth insulating layer 60 may be disposed on the fifth insulating layer 50. The sixth insulating layer 60 may cover the second connecting electrode CNE2. The sixth insulating layer 60 may be an organic layer.

[0129] Electrode AE ​​can be disposed on the sixth insulating layer 60. Electrode AE ​​can be connected to the second connecting electrode CNE2 through the contact hole CNT-3 penetrating the sixth insulating layer 60.

[0130] A pixel definition film (PDL) can be disposed on the electrode AE ​​and the sixth insulating layer 60. An opening OP can be defined on the pixel definition film PDL. The opening OP of the pixel definition film PDL can expose at least a portion of the electrode AE.

[0131] The deposited material DM can be deposited on the electrode AE ​​of the substrate SUB to form a light-emitting layer. However, it is not limited to this; there are no restrictions on the layer formed by the deposited material DM as long as it can be deposited by a deposition process such as a sputter. For example, the deposited material DM can also be deposited on the electrode AE ​​to form a charge transport layer such as a hole transport layer or an electron transport layer, and the deposited material DM can also include metal to form an upper electrode on an organic layer such as a light-emitting layer. Alternatively, the deposited material DM can include organic or inorganic materials, and a capping layer or thin film encapsulation layer can be formed on the upper electrode.

[0132] Figure 12a These are photographs of thin films manufactured using a deposition apparatus according to an embodiment of the present invention. Figure 12b These are photographs of thin films produced using the deposition apparatus of the comparative example. Figure 12a This is a photograph of a thin film manufactured by a deposition apparatus having a pin cooler disposed inside the first portion of a plurality of pins, which overlaps with the electrostatic chuck in cross-section, as in an embodiment of the present invention. Figure 12b These are photographs of thin films manufactured using a deposition apparatus different from that of the present invention, which does not have pin coolers disposed inside the multiple pins. Figure 12a and Figure 12b The image shows a photograph of the upper surface of a Ti thin film produced by the deposition apparatus of the examples and comparative examples.

[0133] Reference Figure 12a and Figure 12b It has been confirmed that when a metal thin film is manufactured using the deposition apparatus according to an embodiment of the present invention, a uniform film with no stains on its upper surface is formed. In contrast, it has been confirmed that when a metal thin film is manufactured using the deposition apparatus of the comparative example, stains are generated on the upper surface of the metal thin film due to uneven temperature. The deposition apparatus according to one embodiment includes a cooler not only in the electrostatic chuck but also above the multiple pins disposed in the holes of the electrostatic chuck, thereby uniformly maintaining the temperature of the upper part of the deposition apparatus and preventing defects such as stains from forming in the film manufactured by the deposition apparatus. This improves the reliability of the display panel manufactured by the deposition apparatus.

[0134] The present invention has been described above with reference to preferred embodiments. However, those skilled in the art or those of ordinary skill in the art should understand that various modifications and variations can be made to the present invention without departing from the scope of the concept and technical field of the invention as set forth in the claims. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed specification, but should be determined solely by the claims.

Claims

1. A deposition apparatus, comprising: A support, defined to have multiple support holes; An electrostatic chuck is disposed on the support and has a plurality of electrostatic chuck holes defined thereon; as well as Multiple pins pass through the support and the electrostatic chuck to connect the support and the electrostatic chuck. The plurality of pins each include: a first portion disposed inside the plurality of electrostatic chuck holes; and a second portion disposed inside the plurality of support holes. The first portion includes: a first base; and a first cooler disposed inside the first base, wherein the first cooler includes a cooling line and a cooling substance circulating inside the cooling line. The electrostatic chuck cooler is located inside the electrostatic chuck.

2. The deposition apparatus according to claim 1, wherein, The second part includes: The second base; and The second cooler is located inside the second base.

3. The deposition apparatus according to claim 1, wherein, The electrostatic chuck includes: Chuck body; A first insulating layer is disposed on the chuck body; Multiple electrodes are disposed on the first insulating layer; and A second insulating layer is disposed on the plurality of electrodes.

4. The deposition apparatus according to claim 3, wherein, The first part includes a plurality of pin insulating layers and a plurality of pin electrodes disposed between the plurality of pin insulating layers.

5. The deposition apparatus according to claim 4, wherein, Individually drive the plurality of pin electrodes and the plurality of electrodes.

6. The deposition apparatus according to claim 1, wherein, The second part includes ceramics or metals.

7. The deposition apparatus according to claim 1, further comprising: A plate, disposed at the lower part of the support, is spaced apart from the electrostatic chuck that sandwiches the support therebetween. The plurality of pins protrude from the upper surface of the plate.

8. The deposition apparatus according to claim 7, wherein, The plate includes a plate cooler configured inside.

9. The deposition apparatus according to claim 7, further comprising: A drive unit is disposed at the lower part of the plate and changes the angles of the plate, the support, and the electrostatic chuck.

10. The deposition apparatus according to claim 1, wherein, The support includes: Support body; and A heater is disposed inside the body of the liner.

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