Tungsten process by-product capture device and semiconductor thin film processing equipment having same

Abstract

This application belongs to the technical field of semiconductor processing equipment, specifically relating to a tungsten process by-product capture device and semiconductor thin film processing equipment having the same. The tungsten process by-product capture device includes: a housing, one end of which is connected to a semiconductor reaction chamber; an internal heating component disposed inside the housing; and an adsorption component disposed inside the housing, used to adsorb by-product gases generated within the semiconductor reaction chamber. According to the tungsten process by-product capture device of the present invention, the by-product gases generated in the semiconductor reaction chamber are input into the tungsten process by-product capture device from the semiconductor reaction chamber. After being heated by the internal heating component, the by-product gases adhere to the surface of the adsorption component, thereby retaining the by-product gases within the tungsten process by-product capture device. This prevents the by-product gases from entering the vacuum pump, reducing the occurrence of vacuum pump malfunctions caused by by-product gases, and reducing the occurrence of vacuum pipeline blockage caused by the accumulation of by-product gases in the vacuum pipeline.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing equipment technology, specifically relating to a tungsten process by-product capture device and semiconductor thin film processing equipment having the same. Background Technology

[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.

[0003] In semiconductor manufacturing processes, the production of tungsten (W), tungsten nitride (WN), or tungsten silicide (Wsi) is often accompanied by the generation of byproduct gases. For example: WF6(g) + H2(g) → W(s) + W(s)↑ + WFx↑ + H2↑ + HF↑, where the byproduct gases are W(s)↑, WFx↑, H2↑, and HF↑; WF6(g) + SiH4(g) → WSix(s) + Wsix(s)↑ + W(s)↑ + H2↑ + HF↑, where the byproduct gases are Wsix(s)↑, W(s)↑, H2↑, and HF↑; WF6(g) + NH3(g) → WN(s) + WN(s)↑ + W↑ + HF↑ + NH3↑ + F2↑, where the byproduct gases are WN(s), WN(s)↑ + W↑, HF↑, NH3↑, and F2↑.

[0004] Byproduct gas deposition in the vacuum line can easily cause blockage of the vacuum line or generate particles in the semiconductor reaction chamber, affecting the normal use of the semiconductor reaction chamber. Alternatively, byproduct gas can enter the vacuum pump through the vacuum line, thereby increasing the time required for vacuuming, or byproduct gas deposition in the vacuum pump can cause vacuum pump failure and gas backflow. Summary of the Invention

[0005] An embodiment of the first aspect of the present invention provides a tungsten process by-product capture device, which is disposed at the output end of a semiconductor reaction chamber. The tungsten process by-product capture device includes: a housing, one end of which is connected to the semiconductor reaction chamber; an internal heating component disposed inside the housing; and an adsorption component disposed inside the housing. By-product gas generated in the semiconductor reaction chamber is heated by the internal heating component and then adsorbed onto the adsorption component.

[0006] An embodiment of the second aspect of the present invention provides a semiconductor thin film processing apparatus, which includes a semiconductor reaction chamber, a vacuum pump, and a tungsten process byproduct capture device. The semiconductor reaction chamber is connected to the vacuum pump via a vacuum pipeline. The tungsten process byproduct capture device is disposed on the vacuum pipeline. The tungsten process byproduct capture device is the same as that of the embodiment of the first aspect of the present invention. Isolation valves are provided on the vacuum pipeline between the semiconductor reaction chamber and the tungsten process byproduct capture device, and on the vacuum pipeline between the tungsten process byproduct capture device and the vacuum pump. Attached Figure Description

[0007] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of specific embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. Wherein:

[0008] Figure 1 This is a schematic diagram of the semiconductor processing equipment of the present invention;

[0009] Figure 2 for Figure 1 The diagram shows a structural schematic of a tungsten process byproduct capture device.

[0010] Figure 3 for Figure 2 A schematic diagram of the structure of the first adsorption plate in the tungsten process by-product capture device shown.

[0011] Figure 4 for Figure 2 The diagram shows the structure of the second adsorption plate in the tungsten process by-product capture device.

[0012] Figure label:

[0013] 100: Tungsten process by-product capture device;

[0014] 10: Shell, 11: Adsorption chamber, 111: Air inlet, 112: Air outlet, 13: Cooling chamber, 131: Liquid inlet direction, 132: Liquid outlet direction;

[0015] 20: Internal heating component; 201: Connector; 21: Heating power supply; 22: Heating plate; 23: Heating rod;

[0016] 30: Adsorption component; 31: First adsorption plate; 311: First through hole; 312: First airflow hole; 32: Second adsorption plate; 321: Second through hole; 322: Second airflow hole;

[0017] 40: Support components;

[0018] 50: External heating component;

[0019] 200: Semiconductor reaction chamber;

[0020] 300: Vacuum pump;

[0021] 400: Vacuum line, 401: Valve body, 402: Isolation valve. Detailed Implementation

[0022] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and not intended to limit the scope of the present disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0023] The accompanying drawings show various structural schematic diagrams according to embodiments of the present disclosure. These drawings are not drawn to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various chambers and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design chambers / layers with different shapes, sizes, and relative positions as needed.

[0024] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0025] like Figure 1 , Figure 2 As shown, an embodiment of the first aspect of the present invention provides a tungsten process by-product capture device 100. The tungsten process by-product capture device 100 is disposed at the output end of a semiconductor reaction chamber 200. The tungsten process by-product capture device 100 includes: a housing 10, an internal heating component 20, and an adsorption component 30. Specifically, one end of the housing 10 is used to connect to the semiconductor reaction chamber 200. The internal heating component 20 is disposed inside the housing 10 and is used to heat the by-product gas. The adsorption component 30 is disposed inside the housing 10. The by-product gas generated in the semiconductor reaction chamber 200 is heated by the internal heating component 20 and then adsorbed onto the adsorption component 30.

[0026] It should be noted that the embodiments of this application do not limit the specific type of the semiconductor reaction chamber 200 and the specific type of the adsorption component 30, because the embodiments of this application mainly focus on absorbing the by-product gases generated within the semiconductor reaction chamber 200. The specific type of the adsorption component 30 depends on the specific reaction within the semiconductor reaction chamber 200. For example, the semiconductor reaction chamber 200 may generate tungsten, tungsten silicide, or tungsten nitride, etc., along with the generation of by-product gases. The adsorption component 30 is made of a material capable of adsorbing the by-product gases of tungsten, tungsten silicide, or tungsten nitride. The by-product gas generated in the semiconductor reaction chamber 200 flows out of the semiconductor reaction chamber 200 and is first input into the tungsten process by-product capture device 100. After being heated by the internal heating component 20, the by-product gas adheres to the adsorption component 30, thereby retaining the by-product gas in the tungsten process by-product capture device 100. This reduces the amount of by-product gas entering the vacuum pump 300 connected to the semiconductor reaction chamber 200, reducing the phenomenon of by-product gas causing vacuum pump 300 failure. At the same time, it reduces the phenomenon of by-product gas depositing and accumulating in the vacuum pipeline 400, causing blockage of the vacuum pipeline 400.

[0027] In some embodiments of the present invention, the housing 10 includes an adsorption chamber 11, within which an internal heating component 20 and an adsorption component 30 are disposed. One end of the internal heating component 20 is disposed within the adsorption chamber 11 and near the air inlet 111 of the housing 10, while the other end of the internal heating component 20 passes through the adsorption component 30, thereby heating the adsorption component 30 to ensure that the by-product gas flowing through the adsorption component 30 is at a certain temperature so that it can be adsorbed by the adsorption component 30. Since the by-product gas is not easily adsorbed by the adsorption component 30 at room temperature, the heating component 20 is used to raise the temperature of the by-product gas, making it easier for the by-product gas to be adsorbed by the adsorption component 30.

[0028] Furthermore, the internal heating component 20 is electrically connected to the heating power supply 21, which is located at the end of the housing 10 that connects to the semiconductor reaction chamber 200. The heating power supply 21 controls the opening and closing of the internal heating component 20. The internal heating component 20 is connected to the inside of the housing 10 via a connector 201. The internal heating component 20 is a T-shaped heating component, which includes a heating plate 22. The heating plate is electrically connected to the heating power supply 21 and is located at one end of the air inlet 12 of the housing 10. After the by-product gas enters the adsorption chamber 11 through the air inlet 12, it first contacts the heating plate 12. The heating plate 12 heats the by-product gas to a temperature that allows it to be adsorbed by the adsorption component 30. When the by-product gas comes into contact with the adsorption component 30, it is adsorbed by the adsorption component 30.

[0029] Specifically, the heating plate 22 is perpendicular to the flow direction of the by-product gas so that the contact area between the by-product gas and the heating plate 22 is maximized after the by-product gas enters the adsorption chamber 11, so that the heating plate 22 can fully heat the by-product gas, making it easier for the adsorption component 30 to adsorb the by-product gas.

[0030] Furthermore, the T-shaped heating assembly also includes a heating rod 23, which is fixedly connected to the heating plate 22. The heating rod 23 extends from the heating plate 22 in a direction away from the semiconductor reaction chamber 200. The heating rod 23 passes through the first adsorption plate 31 and the second adsorption plate 32. When the heating rod 23 is energized, it heats the first adsorption plate 31 and the second adsorption plate 32. When the by-product gas flows through the first adsorption plate 31 and the second adsorption plate 32, the first adsorption plate 31 and the second adsorption plate 32 further heat the by-product gas so that the first adsorption plate 31 and the second adsorption plate 32 can fully adsorb the by-product gas.

[0031] In addition, the heating rod 23 is electrically connected to the heating plate 22, or the heating rod 23 is electrically connected to the heating power supply 21. When the heating power supply 21 is turned on, the heating power supply 21 indirectly heats the heating rod 23 through the heating plate 22, so as to reduce the circuit connection between the heating power supply 21 and the heating rod 23.

[0032] like Figure 2 and Figure 3 As shown, in some embodiments of the present invention, the adsorption component 30 is sleeved on the heating rod 23. Specifically, the adsorption component 30 includes a first adsorption plate 31, with a first through hole 311 in the middle. The size of the first through hole 311 is equal to the outer diameter of the heating rod 23. The heating rod 23 passes through the first through hole 311 and is inserted into the first adsorption plate 31. The heating rod 23 heats the first adsorption plate 31 from the middle to ensure uniform heating of the heating rod 31. The first adsorption plate 31 has multiple first airflow holes 312. After the by-product gas enters the adsorption chamber 11 and comes into contact with the heating plate 22 and is heated, it flows from both sides of the heating plate 22 to the first adsorption plate 31. Some of the by-product gas is adsorbed by the first adsorption plate 31, and the gas that is not adsorbed by the first adsorption plate 31 flows to the second adsorption plate 32 through the first airflow holes 312.

[0033] like Figure 2 and Figure 4As shown, the adsorption assembly 30 further includes a second adsorption plate 32. A second through hole 321 is provided in the middle of the second adsorption plate 32. The size of the second through hole 321 is equal to the outer diameter of the heating rod 23. The heating rod 23 passes through the second through hole 321 into the second adsorption plate 32, heating it from the middle of the second adsorption plate 32 to ensure uniform heating. The second adsorption plate 32 is located behind the first adsorption plate 31 along the flow direction of the by-product gas. Multiple second airflow holes 322 are provided on the second adsorption plate 32. By-product gas not adsorbed by the first adsorption plate 31 flows from the first airflow holes 312 to the second adsorption plate 32. A portion of the by-product gas not adsorbed by the first adsorption plate 31 is adsorbed by the second adsorption plate 32, and the remaining by-product gas flows through the second airflow holes 322 to another adsorption plate located behind it. Specifically, the first adsorption plate 31 and the second adsorption plate 32 are spaced apart to ensure that the by-product gas can flow between the first adsorption plate 31 and the second adsorption plate 32.

[0034] In some embodiments of the present invention, such as Figure 3 , Figure 4 As shown, multiple second airflow holes 322 and multiple first airflow holes 312 are staggered along the circumference of the heating rod 23 to increase the flow path of the by-product gas from the first airflow holes 312 to the second airflow holes 322, ensuring that the first adsorption plate 31 and the second adsorption plate 32 are in full contact with the by-product gas and that the first adsorption plate 31 and the second adsorption plate 32 fully absorb the by-product gas. If the first airflow holes 312 and the second airflow holes 322 are arranged in a one-to-one correspondence, the by-product gas will flow directly from the first airflow holes 312 into the second airflow holes 322, resulting in the by-product gas not being fully absorbed by the first adsorption plate 31 and the second adsorption plate 32.

[0035] Furthermore, there are multiple first adsorption plates 31 and multiple second adsorption plates 32, which are arranged alternately along the flow direction of the by-product gas. The by-product gas flows from both sides of the heating plate 22 to the adsorption assembly 30, and after passing through multiple alternately arranged first adsorption plates 31 and second adsorption plates 32, it flows out of the adsorption chamber 11 and through the vacuum line 400 to the vacuum pump 300. The multiple alternately arranged first adsorption plates 31 and second adsorption plates 32 can ensure sufficient absorption of the by-product gas.

[0036] In other embodiments of the present invention, a third adsorption plate (not shown in the figure) may also be provided. The position of the third airflow hole on the third adsorption plate is different from the position of the first airflow hole 312 and the second airflow hole 322. The first adsorption plate 31, the second adsorption plate 32 and the third adsorption plate are arranged alternately in the adsorption chamber 12. Alternatively, a fourth adsorption plate or more adsorption plates with different airflow holes may also be provided, as long as the flow path of the by-product gas can be increased so that the by-product gas can be fully absorbed.

[0037] Furthermore, the tungsten process by-product capture device 100 also includes a support assembly 40, which consists of multiple support frames disposed on the inner wall of the housing 10. The multiple support frames support the edges of the multiple first adsorption plates 31 and the multiple second adsorption plates 32 respectively.

[0038] In some embodiments of the present invention, the tungsten process by-product capture device 100 further includes an external heating component 50. Specifically, the external heating component 50 is a heating plate arranged around the outer side of the housing 10. The first adsorption plate 31 and the second adsorption plate 32 are both sleeved on the heating rod 23, and the heating rod 23 heats the middle of the first adsorption plate 31 and the second adsorption plate 32. The heat of the first adsorption plate 31 and the second adsorption plate 32 diffuses from the middle to the edge. However, since the contact area between the heating rod 23 and the first adsorption plate 31 and the second adsorption plate 32 is small, the edge temperature of the first adsorption plate 31 and the second adsorption plate 32 may not reach the temperature at which the by-product gas is adsorbed. Therefore, the outer side of the housing 10 is provided with an external heating component 50 surrounding it so that the outer edges of the first adsorption plate 31 and the second adsorption plate 32 can reach the temperature for adsorbing the by-product gas. At the same time, the outer wall heating component 40 can prevent the heat inside the housing 10 from being lost.

[0039] In some embodiments of the present invention, a cooling chamber 13 is further formed inside the housing 10. The cooling chamber 13 is disposed at one end of the housing 10 near the semiconductor reaction chamber 200. A gas channel is formed inside the cooling chamber 13 to allow the by-product gas to pass through, so that the by-product gas enters the adsorption chamber 11 through the gas channel. The cooling chamber 13 is connected to both the liquid inlet 131 and the liquid outlet 132. Coolant (e.g., cooling water) enters the cooling chamber 13 through the liquid inlet and then exits through the liquid outlet 132. Figure 2 (Only the inlet and outlet directions are shown in the diagram) The cooling chamber 13 is used to prevent heat from the housing 10 from being transferred in the reverse direction to the semiconductor reaction chamber 200 through the vacuum line 400.

[0040] In some embodiments of the present invention, the temperature range of the internal heating component 20 is 100°C to 500°C, and the by-product gases from the reaction process, which produce tungsten, tungsten silicide, or tungsten nitride, are easily adsorbed onto the adsorption component 30 within this temperature range. The temperature range of the external heating component 50 is 100°C to 400°C. The length, width, and height of the tungsten process by-product capturing device 100 range from 200mm to 2000mm. Furthermore, arrows not explicitly labeled in the figures indicate the flow direction of the by-product gases.

[0041] like Figure 1 As shown, an embodiment of the second aspect of the present invention provides a semiconductor processing apparatus 500. The semiconductor thin film processing apparatus includes a semiconductor reaction chamber 200, a vacuum pump 300, and a tungsten process by-product capture device 100. The semiconductor reaction chamber 200 is connected to the vacuum pump 300 through a vacuum line 400. The tungsten process by-product capture device 100 is disposed on the vacuum line 400. The tungsten process by-product capture device 100 is the tungsten process by-product capture device 100 according to any of the above embodiments. Isolation valves 402 are provided on the vacuum line 400 between the semiconductor reaction chamber 200 and the tungsten process by-product capture device 100 and on the vacuum line 400 between the tungsten process by-product capture device 100 and the vacuum pump 300.

[0042] According to the semiconductor processing equipment 500 of the present invention, when tungsten, tungsten silicide or tungsten nitride is generated in the semiconductor reaction chamber 200, the by-product gas generated is input from the semiconductor reaction chamber 200 into the tungsten process by-product capture device 100. After being heated by the internal heating component 20, the by-product gas adheres to the surface of the adsorption component 30, thereby retaining the by-product gas in the tungsten process by-product capture device 100, reducing the phenomenon of by-product gas entering the vacuum pump 300, reducing the phenomenon of by-product gas causing vacuum pump 300 failure, and at the same time, reducing the phenomenon of by-product gas depositing and accumulating in the vacuum pipeline 400 and causing blockage of the vacuum pipeline 400.

[0043] In some embodiments of the present invention, a valve body 401 is provided on the vacuum line 400. The valve body 401 is disposed between the semiconductor reaction chamber 200 and the tungsten process by-product capture device 100. The valve body 401 is used to control the connection or disconnection of the vacuum line 400 between the semiconductor reaction chamber 200 and the tungsten process by-product capture device 100. Two isolation valves 402 are also provided on the vacuum line 400. The two isolation valves 402 are disposed at both ends of the tungsten process by-product capture device 100. When the tungsten process by-product capture device 100 needs to be replaced, the two isolation valves 402 are closed to prevent leakage of by-product gas from the tungsten process by-product capture device 100.

[0044] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. To achieve the same purpose, those skilled in the art can devise methods that are not entirely identical to those described above. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A device for capturing byproducts of tungsten processing, characterized in that, The tungsten process byproduct capture device is located at the output end of the semiconductor reaction chamber, and the tungsten process byproduct capture device includes: A housing, one end of which is connected to the semiconductor reaction chamber; An internal heating assembly is disposed inside the housing, and the internal heating assembly includes a heating plate and a heating rod; An adsorption assembly is disposed inside the housing. The by-product gas generated in the semiconductor reaction chamber is heated by the internal heating assembly and then adsorbed onto the adsorption assembly. The adsorption assembly includes a first adsorption plate with a first through hole. The size of the first through hole is equal to the outer diameter of the heating rod. The heating rod passes through the first through hole and is inserted into the first adsorption plate. The heating plate is disposed at one end of the housing, near the air inlet of the housing, and perpendicular to the flow direction of the by-product gas. The heating rod is connected to the heating plate and forms a T-shaped structure distributed inside the housing. The heating rod extends from the heating plate away from the semiconductor reaction chamber and passes through the adsorption assembly.

2. The tungsten process by-product capture device according to claim 1, characterized in that, The first adsorption plate is sleeved on the end of the internal heating component away from the semiconductor reaction chamber, and the first adsorption plate has a plurality of first airflow holes.

3. The tungsten process by-product capture device according to claim 2, characterized in that, The adsorption assembly includes a second adsorption plate, which is sleeved on the end of the internal heating assembly away from the semiconductor reaction chamber. The first adsorption plate and the second adsorption plate are spaced apart, and the second adsorption plate has a plurality of second airflow holes.

4. The tungsten process by-product capture device according to claim 3, characterized in that, The plurality of second airflow holes and the plurality of first airflow holes are arranged alternately along the circumference of the adsorption assembly.

5. The tungsten process by-product capture device according to claim 4, characterized in that, There are multiple first adsorption plates and multiple second adsorption plates, which are arranged alternately along the flow direction of the by-product gas.

6. The tungsten process by-product capture device according to any one of claims 1 to 5, characterized in that, The tungsten process by-product capture device also includes an external heating component, which is arranged around the outside of the housing.

7. The tungsten process by-product capture device according to any one of claims 1 to 5, characterized in that, The housing has a cooling chamber and an adsorption chamber. The cooling chamber is located at one end of the housing. The by-product gas passes through the cooling chamber and enters the adsorption chamber. The internal heating component and the adsorption component are both located in the adsorption chamber.

8. A semiconductor thin film processing apparatus, characterized in that, The semiconductor thin film processing equipment includes a semiconductor reaction chamber, a vacuum pump, and a tungsten process by-product capture device. The semiconductor reaction chamber is connected to the vacuum pump via a vacuum pipeline. The tungsten process by-product capture device is disposed on the vacuum pipeline. The tungsten process by-product capture device is the tungsten process by-product capture device according to any one of claims 1 to 7. Isolation valves are provided on the vacuum pipeline between the semiconductor reaction chamber and the tungsten process by-product capture device, and on the vacuum pipeline between the tungsten process by-product capture device and the vacuum pump.

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