Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of stably releasing a gas to the inside of a processing liquid stored in a processing tank. The substrate processing apparatus includes a processing tank, a first gas nozzle group, a second gas nozzle group, and a control section. The processing tank processes a plurality of substrates arranged by dipping them in a processing liquid. The first gas nozzle group is arranged at a position lower than the plurality of substrates in the inside of the processing tank, and releases a gas to the processing liquid stored in the processing tank. The second gas nozzle group is arranged near the first gas nozzle group, and releases a gas to the processing liquid stored in the processing tank. The control section controls each section. The control section releases a gas to the processing liquid from one of the first gas nozzle group and the second gas nozzle group when the plurality of substrates are processed by being dipped in the processing liquid. The control section switches from releasing a gas by one gas nozzle group to releasing a gas by the other gas nozzle group when a prescribed switching condition is detected.

Description

Technical Field

[0001] The embodiments disclosed in this invention relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] It has been known that a technique exists in which multiple substrates are liquid-treated together by immersing them in a treatment solution stored in a treatment tank (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-50349 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique for stably releasing gas into the interior of a treatment liquid stored in a treatment tank.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the substrate processing apparatus of the present invention includes a processing tank, a first gas nozzle group, a second gas nozzle group, and a control unit. The processing tank immerses a plurality of substrates arranged in a processing liquid for processing. The first gas nozzle group is disposed inside the processing tank, positioned below the plurality of substrates, and releases gas into the processing liquid stored in the processing tank. The second gas nozzle group is disposed close to the first gas nozzle group and releases gas into the processing liquid stored in the processing tank. The control unit controls each component. Furthermore, while the plurality of substrates are immersed in the processing liquid for processing, the control unit releases gas into the processing liquid from one of the gas nozzle groups (the first and second groups). Additionally, the control unit switches from releasing gas from one gas nozzle group to releasing gas from the other gas nozzle group when a predetermined switching condition is detected.

[0010] Invention Effects

[0011] According to the present invention, gas can be stably released into the interior of the treatment liquid stored in the treatment tank. Attached Figure Description

[0012] Figure 1 This is a schematic block diagram showing the structure of the substrate processing system in the implementation method.

[0013] Figure 2 This is a schematic block diagram showing the structure of the etching process apparatus according to the embodiment.

[0014] Figure 3 This is a perspective view showing the structure of the first gas nozzle assembly in the embodiment.

[0015] Figure 4 This is a perspective view showing the structure of the second gas nozzle assembly in the embodiment.

[0016] Figure 5 This is a schematic block diagram showing the structure of the piping connected to the gas release section in an embodiment.

[0017] Figure 6 This is a cross-sectional view showing an example of the configuration of the first gas nozzle group and the second gas nozzle group in an embodiment.

[0018] Figure 7 This is a side view showing an example of the configuration of the first gas nozzle group and the second gas nozzle group in an embodiment.

[0019] Figure 8 This is a graph showing the change (shift) over time of the gas supply pressure of the inactive gas in the first gas nozzle group and the second gas nozzle group of the embodiment.

[0020] Figure 9 This is a schematic block diagram showing the structure of the piping connected to the gas release section in a modified example 1 of the embodiment.

[0021] Figure 10 This is a cross-sectional view showing an example of the configuration of the first gas nozzle group and the second gas nozzle group in a modified example 2 of the embodiment.

[0022] Figure 11 This is a cross-sectional view showing an example of the configuration of the first gas nozzle group and the second gas nozzle group in a variation of embodiment 3.

[0023] Figure 12 This is a side view showing an example of the configuration of the first gas nozzle group and the second gas nozzle group in a variation of embodiment 4.

[0024] Figure 13 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group and the second gas nozzle group of the modified embodiment 5.

[0025] Figure 14 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group and the second gas nozzle group of the modified embodiment 6.

[0026] Figure 15 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group and the second gas nozzle group of the modified embodiment 7.

[0027] Figure 16 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group and the second gas nozzle group of the modified embodiment 8.

[0028] Figure 17 This is a flowchart illustrating the substrate processing flow of the implementation method.

[0029] Figure 18 This is a flowchart illustrating the nozzle switching process of the implementation method.

[0030] Figure 19 This is a flowchart illustrating the nozzle switching process of Modified Example 5 of the implementation method.

[0031] Figure 20 This is a flowchart illustrating the substrate processing flow of Modification 6 of the implementation method.

[0032] Figure 21 This is a flowchart illustrating the substrate processing flow of Modified Example 7 of the implementation method.

[0033] Figure 22 This is a flowchart illustrating the substrate processing flow of Modified Example 8 of the implementation method.

[0034] Explanation of reference numerals in the attached figures

[0035] 1. Substrate processing system (an example of a substrate processing device)

[0036] 7. Control Department

[0037] 61 Etching Treatment Tank

[0038] 111 Processing Tank

[0039] 130 Gas Release Section

[0040] 140 First Gas Nozzle Group

[0041] 140-1~140-6 Gas Nozzle

[0042] 150 Second Gas Nozzle Group

[0043] 150-1~150-6 Gas Nozzle

[0044] X1 First threshold

[0045] X2 Second Threshold

[0046] W-chip (an example of a substrate)

[0047] L Etching solution (an example of a processing solution)

[0048] H Release port. Detailed Implementation

[0049] Hereinafter, with reference to the accompanying drawings, embodiments of the substrate processing apparatus and substrate processing method disclosed in this application will be described in detail. However, the present invention is not limited to the embodiments shown below. Furthermore, it should be noted that the drawings are merely illustrative, and the dimensional relationships and proportions of the elements may sometimes differ from reality. Moreover, the drawings may sometimes include portions with different dimensional relationships or proportions.

[0050] It has long been known that multiple substrates can be etched simultaneously by immersing them in a processing solution stored in a processing tank. In addition, in order to improve the temperature uniformity and the efficiency of solution replacement in this etching process, gas is sometimes released into the processing solution from a gas nozzle located at the bottom of the processing tank, forming an upflow in the processing tank.

[0051] However, in the aforementioned prior art, the gas nozzle sometimes becomes clogged due to crystallization of etched components inside. This can lead to a decrease in temperature uniformity within the treatment tank and reduced efficiency of the chemical replacement process because the gas cannot be stably released into the treatment liquid.

[0052] Therefore, it is desirable to develop a technology that can overcome the above-mentioned problems and stably release gas into the interior of the treatment liquid stored in the treatment tank.

[0053] <Structure of the Substrate Processing System>

[0054] First, refer to Figure 1 The structure of the substrate processing system 1 in the embodiment will be described. Figure 1 This is a schematic block diagram illustrating the structure of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

[0055] like Figure 1 As shown, the substrate processing system 1 of the embodiment includes a carrier feeding and feeding unit 2, a batch forming unit 3, a batch mounting unit 4, a batch transport unit 5, a batch processing unit 6, and a control unit 7.

[0056] The carrier feeding and discharging unit 2 includes a carrier platform 20, a carrier conveying mechanism 21, carrier stacks 22 and 23, and a carrier placement platform 24.

[0057] The carrier stage 20 holds multiple carriers 9 transported from the outside. Each carrier 9 is a container that holds multiple (e.g., 25) wafers W arranged vertically in a horizontal orientation. The carrier transport mechanism 21 transports the carriers 9 between the carrier stage 20, the carrier stacks 22 and 23, and the carrier placement stage 24.

[0058] Using the substrate transport mechanism 30 (described later), multiple wafers W before processing are transported from the carrier 9 placed on the carrier stage 24 to the batch processing unit 6. Furthermore, using the substrate transport mechanism 30, multiple processed wafers W are transported from the batch processing unit 6 into the carrier 9 placed on the carrier stage 24.

[0059] The batch forming unit 3 has a substrate transport mechanism 30 for forming batches. A batch consists of multiple (e.g., 50) wafers W that are processed simultaneously by combining wafers W housed in one or more carriers 9. The multiple wafers W forming a batch are arranged at intervals with their surfaces facing each other.

[0060] The substrate transport mechanism 30 transports multiple wafers W between the carrier 9 placed on the carrier stage 24 and the batch loading section 4.

[0061] The batch placement unit 4 has a batch transport stage 40, which temporarily holds (standby) batches transported between the batch forming unit 3 and the batch processing unit 6 by the batch transport unit 5. The batch transport stage 40 has an infeed side stage 41 for holding batches formed by the batch forming unit 3 before processing and an outfeed side stage 42 for holding batches processed by the batch processing unit 6. On the infeed side stage 41 and the outfeed side stage 42, multiple wafers W of a batch are placed in a vertical arrangement, one after the other.

[0062] The batch transport unit 5 has a batch transport mechanism 50, which transports batches between the batch placement unit 4 and the batch processing unit 6, and inside the batch processing unit 6. The batch transport mechanism 50 has a guide rail 51, a moving body 52, and a substrate holder 53.

[0063] The guide rail 51 is arranged along the X-axis between the batch placement section 4 and the batch processing section 6. The moving body 52 is configured to move along the guide rail 51 while holding multiple wafers W. The substrate holder 53 is disposed on the moving body 52 and holds the multiple wafers W arranged in a vertical position.

[0064] The batch processing unit 6 performs etching, cleaning, and drying processes on multiple wafers W in a batch simultaneously. In the batch processing unit 6, two etching devices 60, a cleaning device 70, a cleaning device 80, and a drying device 90 are arranged along the guide rail 51.

[0065] Etching apparatus 60 etches multiple wafers W in a batch simultaneously. Cleaning apparatus 70 cleans multiple wafers W in a batch simultaneously. Cleaning apparatus 80 cleans the substrate holder 53. Drying apparatus 90 dries multiple wafers W in a batch simultaneously. Furthermore, the number of etching apparatus 60, cleaning apparatus 70, cleaning apparatus 80, and drying apparatus 90 is not limited to [specific number missing]. Figure 1 Examples.

[0066] The etching processing apparatus 60 includes an etching processing tank 61 for etching processing, a rinsing processing tank 62 for rinsing processing, and substrate lifting mechanisms 63 and 64.

[0067] The etching tank 61 is capable of accommodating a batch of wafers W arranged in an upright position and storing the etching solution (hereinafter also referred to as "etching solution"). Details of the etching tank 61 are described later.

[0068] The rinsing solution (deionized water, etc.) is stored in the rinsing tank 62. Multiple wafers W forming a batch are held in a vertical, back-to-back arrangement by the substrate lifting mechanism 63, 64.

[0069] The etching process apparatus 60 uses the substrate lifting mechanism 63 to hold the batch conveyed by the batch conveying unit 5 and immerses it in the etching solution of the etching process tank 61 for etching process.

[0070] The batches etched in the etching tank 61 are then transported by the batch transport unit 5 to the rinsing tank 62. The etching apparatus 60 then holds the transported batches using the substrate lifting mechanism 64 and immerses them in the rinsing solution of the rinsing tank 62 for rinsing. The batches rinsed in the rinsing tank 62 are then transported by the batch transport unit 5 to the cleaning tank 71 of the cleaning apparatus 70.

[0071] The cleaning treatment apparatus 70 includes a cleaning treatment tank 71 for cleaning, a rinsing treatment tank 72 for rinsing, and substrate lifting mechanisms 73 and 74. The cleaning treatment tank 71 stores a cleaning solution (hereinafter also referred to as "cleaning solution"). The cleaning solution may be, for example, SC-1 (a mixture of ammonia, hydrogen peroxide, and water).

[0072] The rinsing tank 72 for rinsing is used to store the rinsing solution (deionized water, etc.). Multiple wafers W in a batch are held in a vertical position, arranged back-to-back, by the substrate lifting mechanism 73, 74.

[0073] The cleaning process apparatus 70 uses the substrate lifting mechanism 73 to hold the batch conveyed by the batch conveying unit 5 and immerses it in the cleaning solution of the cleaning process tank 71 to perform the cleaning process.

[0074] After being cleaned in the cleaning tank 71, the batch is conveyed by the batch conveying unit 5 to the rinsing tank 72. Then, the cleaning device 70 holds the conveyed batch using the substrate lifting mechanism 74 and immerses it in the rinsing solution in the rinsing tank 72 for rinsing. After being rinsed in the rinsing tank 72, the batch is conveyed by the batch conveying unit 5 to the drying tank 91 of the drying device 90.

[0075] The drying apparatus 90 includes a drying tank 91 and a substrate lifting mechanism 92. A drying gas is supplied to the drying tank 91. Multiple wafers W in a batch are held in a vertical, front-to-back arrangement in the substrate lifting mechanism 92.

[0076] The drying apparatus 90 uses a substrate lifting mechanism 92 to hold the batches conveyed by the batch transport unit 5, and performs drying treatment using a drying gas supplied to the drying tank 91. After drying in the drying tank 91, the batches are transported by the batch transport unit 5 to the batch placement unit 4.

[0077] The cleaning process apparatus 80 performs cleaning process on the substrate holder 53 by supplying a cleaning solution to the substrate holder 53 of the batch conveying mechanism 50 and then supplying a drying gas.

[0078] The control unit 7 controls the operation of each part of the substrate processing system 1 (carrier feeding / discharging unit 2, batch forming unit 3, batch loading unit 4, batch transport unit 5, batch processing unit 6, etc.). The control unit 7 controls the operation of each part of the substrate processing system 1 based on signals from switches and various sensors.

[0079] The control unit 7 includes a microcomputer with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The control unit 7 controls the operation of the substrate processing system 1 by reading and executing programs stored in a memory unit (not shown).

[0080] The control unit 7 has a computer-readable storage medium 8. The storage medium 8 stores the aforementioned program that controls various processes executed in the substrate processing system 1. The program can be stored in the computer-readable storage medium 8, or it can be installed from other storage media onto the storage medium 8 of the control unit 7.

[0081] Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), and memory cards.

[0082] <Structure of the Etching Processing Equipment>

[0083] Below, refer to Figure 2 The structure of the etching process apparatus 60 for performing the etching process of wafer W will be described. Figure 2 This is a schematic block diagram showing the structure of the etching processing apparatus 60 according to the embodiment.

[0084] The etching processing apparatus 60 includes an etching solution supply unit 100 and a substrate processing unit 110. The etching solution supply unit 100 supplies etching solution L to the substrate processing unit 110. The etching solution L is an example of a processing liquid. The etching solution L in the embodiment is, for example, SC-1.

[0085] The etching solution supply unit 100 includes an etching solution supply source 101, an etching solution supply passage 102, and a flow regulator 103.

[0086] The etching solution supply passage 102 connects the etching solution supply source 101 to the outer tank 112 of the etching treatment tank 61, and supplies etching solution L from the etching solution supply source 101 to the outer tank 112.

[0087] A flow regulator 103 is configured in the etching solution supply passage 102 to regulate the flow rate of the etching solution L supplied to the outer tank 112. The flow regulator 103 includes an on / off valve, a flow control valve, and a flow meter.

[0088] The substrate processing unit 110 immerses the wafer W in the etching solution L supplied from the etching solution supply unit 100 and performs an etching process on the wafer W. The wafer W is an example of a substrate. The substrate processing unit 110 performs an etching process on a polysilicon film formed on the wafer W, for example.

[0089] The substrate processing unit 110 includes an etching processing tank 61, a substrate lifting mechanism 63, a circulation passage 120, and a gas release unit 130. The etching processing tank 61 has a processing tank 111 and an outer tank 112.

[0090] The processing tank 111 is a tank for immersing the wafer W in the etching solution L, and for holding the etching solution L for immersion. The processing tank 111 has an opening at the top, and the etching solution L is stored near the opening.

[0091] In the processing tank 111, a plurality of wafers W are immersed in the etching solution L using a substrate lifting mechanism 63 to perform etching on the wafers W. The substrate lifting mechanism 63 is configured to be lifting and holding the plurality of wafers W in a vertical orientation, arranged back and forth (in the Y-axis direction).

[0092] The outer tank 112 is disposed outside the processing tank 111 in a manner that surrounds the processing tank 111, and receives the etching solution L flowing out from the opening of the processing tank 111. For example... Figure 2 As shown, the liquid level in the outer tank 112 is maintained lower than the liquid level in the processing tank 111.

[0093] The outer tank 112 is connected to the treatment tank 111 via a circulation passage 120. One end of the circulation passage 120 is connected to the bottom of the outer tank 112, and the other end of the circulation passage 120 is connected to the treatment fluid supply nozzle 124 located in the treatment tank 111.

[0094] In the circulation passage 120, a pump 121, a heater 122, and a filter 123 are arranged sequentially from the outer tank 112 side. The pump 121 forms a circulation flow of the etching solution L that is sent from the outer tank 112 to the processing tank 111 through the circulation passage 120.

[0095] Furthermore, the etching solution L overflows from the opening of the processing tank 111 and flows out again into the outer tank 112. In this way, a circulating flow of the etching solution L is formed within the substrate processing section 110. That is, this circulating flow is formed in the outer tank 112, the circulation passage 120, and the processing tank 111.

[0096] Heater 122 regulates the temperature of the etchant L circulating in circulation path 120. Filter 123 filters the etchant L circulating in circulation path 120. Processing fluid supply nozzle 124 is disposed below wafer W in processing tank 111 to supply etchant L to processing tank 111.

[0097] The gas release unit 130 releases an inactive gas (e.g., nitrogen, argon, etc.) into the etching solution L stored in the processing tank 111. An inactive gas is an example of a gas. By releasing the inactive gas into the processing tank 111, the gas release unit 130 creates an upward flow of the etching solution L inside the processing tank 111.

[0098] The gas release unit 130 has a first gas nozzle group 140 and a second gas nozzle group 150. The first gas nozzle group 140 and the second gas nozzle group 150 are arranged in the processing tank 111 below the wafer W and the processing liquid supply nozzle 124, and release bubbles of inactive gas into the etching liquid L stored in the processing tank 111.

[0099] <Structure of the gas release section>

[0100] Below, refer to Figures 3-7 The detailed structure of the gas release unit 130 in the embodiment will be described. Figure 3 This is a perspective view showing the structure of the first gas nozzle group 140 according to the embodiment.

[0101] like Figure 3 As shown, the first gas nozzle group 140 has a plurality of (six in the figure) gas nozzles 140-1 to 140-6. These gas nozzles 140-1 to 140-6 are positioned along a plurality of wafers W (see reference). Figure 2 The arrangement direction (i.e., the Y-axis direction) extends. In addition, the gas nozzles 140-1 to 140-6 are arranged sequentially along the X-axis direction.

[0102] That is, gas nozzles 140-2 and 140-5 are arranged on the radial inner side of the wafer W compared to gas nozzles 140-1 and 140-6, and gas nozzles 140-3 and 140-4 are arranged on the radial inner side of the wafer W compared to gas nozzles 140-2 and 140-5.

[0103] Additionally, a gas supply passage 141 is connected to the first gas nozzle group 140. The gas supply passage 141 includes a gas supply passage 141a, a gas supply passage 141b, and a gas supply passage 141c.

[0104] Gas supply passage 141a has a portion extending in the vertical direction, connecting gas nozzles 140-1, 140-6 and inactive gas supply source 160 (see reference). Figure 5 Between. That is, inactive gas is supplied to gas nozzles 140-1 and 140-6 using a common gas supply passage 141a.

[0105] The gas supply passage 141b has a portion extending in the vertical direction, connecting the gas nozzles 140-2 and 140-5 with the inactive gas supply source 160. That is, inactive gas is supplied to the gas nozzles 140-2 and 140-5 using the common gas supply passage 141b.

[0106] The gas supply passage 141c has a portion extending in the vertical direction, connecting the gas nozzles 140-3 and 140-4 to the inactive gas supply source 160. That is, inactive gas is supplied to the gas nozzles 140-3 and 140-4 using the common gas supply passage 141c.

[0107] In addition, in this invention, an example is given in which six gas nozzles 140-1 to 140-6 are provided in the first gas nozzle group 140. However, the number of gas nozzles provided in the first gas nozzle group 140 is not limited to six, and may also be two or four, etc.

[0108] Figure 4 This is a perspective view showing the structure of the second gas nozzle group 150 according to the embodiment.

[0109] like Figure 4As shown, the second gas nozzle group 150 has a plurality of (six in the figure) gas nozzles 150-1 to 150-6. These gas nozzles 150-1 to 150-6 are positioned along a plurality of wafers W (see reference). Figure 2 The arrangement direction (i.e., the Y-axis direction) extends. In addition, the gas nozzles 150-1 to 150-6 are arranged sequentially along the X-axis direction.

[0110] That is, gas nozzles 150-2 and 150-5 are arranged on the radial inner side of the wafer W compared to gas nozzles 150-1 and 150-6, and gas nozzles 150-3 and 150-4 are arranged on the radial inner side of the wafer W compared to gas nozzles 150-2 and 150-5.

[0111] Additionally, a gas supply passage 151 is connected to the second gas nozzle group 150. The gas supply passage 151 includes a gas supply passage 151a, a gas supply passage 151b, and a gas supply passage 151c.

[0112] Gas supply passage 151a has a portion extending in the vertical direction, connecting gas nozzles 150-1, 150-6 and inactive gas supply source 160 (see reference). Figure 5 Between. That is, inactive gas is supplied to gas nozzles 150-1 and 150-6 using a common gas supply passage 151a.

[0113] The gas supply passage 151b has a portion extending in the vertical direction, connecting the gas nozzles 150-2 and 150-5 with the inactive gas supply source 160. That is, inactive gas is supplied to the gas nozzles 150-2 and 150-5 using the common gas supply passage 151b.

[0114] The gas supply passage 151c has a portion extending in the vertical direction, connecting the gas nozzles 150-3 and 150-4 to the inactive gas supply source 160. That is, inactive gas is supplied to the gas nozzles 150-3 and 150-4 using the common gas supply passage 151c.

[0115] In addition, in this invention, an example is given in which six gas nozzles 150-1 to 150-6 are provided in the second gas nozzle group 150. However, the number of gas nozzles provided in the second gas nozzle group 150 is not limited to six, and may also be two or four, etc.

[0116] Figure 5 This is a schematic block diagram showing the structure of the piping connected to the gas release unit 130 in an embodiment. (Example) Figure 5 As shown, the inactive gas supplied to the gas release unit 130 is supplied from the inactive gas supply source 160.

[0117] A pressure gauge 162 is provided in a gas supply passage 161 extending from the inert gas supply source 160. The pressure gauge 162 measures the pressure of the inert gas flowing in the gas supply passage 161. Furthermore, the gas supply passage 161 branches into a gas supply passage 141 and a gas supply passage 151 downstream of the pressure gauge 162.

[0118] A flow regulator 142 is provided in the gas supply passage 141, which branches off from the gas supply passage 161. The flow regulator 142 regulates the supply amount of inactive gas to the first gas nozzle group 140. The flow regulator 142 includes an on / off valve, a flow control valve, and a flow meter, etc.

[0119] An open passage 143 is connected downstream of the flow regulator 142 in the gas supply passage 141, and the open passage 143 is connected (communicated) to the external atmosphere via the flow regulator 144.

[0120] Downstream of the connection point to the open passage 143, the gas supply passage 141 branches into gas supply passages 141a, 141b, and 141c. Gas supply passage 141a connects to gas nozzles 140-1 and 140-6 (see reference). Figure 3 The gas supply passage 141b is connected to the gas nozzles 140-2 and 140-5 (see reference). Figure 3 The gas supply passage 141c is connected to the gas nozzles 140-3 and 140-4 (see reference). Figure 3 )connect.

[0121] That is, in the embodiment, the flow rate of the inactive gas supplied to all gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 is uniformly regulated by a common flow regulator 142.

[0122] Additionally, a flow regulator 152 is provided in the gas supply passage 151, which branches off from the gas supply passage 161. The flow regulator 152 regulates the supply amount of inert gas to the second gas nozzle group 150. The flow regulator 152 includes an on / off valve, a flow control valve, and a flow meter, etc.

[0123] An open passage 153 is connected downstream of the flow regulator 152 in the gas supply passage 151, and the open passage 153 is connected (communicated) to the external atmosphere via the flow regulator 154.

[0124] Downstream of the connection point to the open passage 153, the gas supply passage 151 branches into gas supply passages 151a, 151b, and 151c. Gas supply passage 151a connects to gas nozzles 150-1 and 150-6 (see reference). Figure 4The gas supply passage 151b is connected to the gas nozzles 150-2 and 150-5 (see reference). Figure 4 The gas supply passage 151c is connected to the gas nozzles 150-3 and 150-4 (see reference). Figure 4 )connect.

[0125] That is, in the embodiment, the flow rate of the inactive gas supplied to all gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 is uniformly regulated by a common flow regulator 152.

[0126] Figure 6 This is a cross-sectional view showing an example of the configuration of the first gas nozzle group 140 and the second gas nozzle group 150 according to the embodiment. Figure 7 This is a side view showing an example of the configuration of the first gas nozzle group 140 and the second gas nozzle group 150 in an embodiment.

[0127] like Figure 6 and Figure 7 As shown, in the first gas nozzle group 140, gas nozzles 140-1 to 140-6 are provided with a plurality of release ports H along the extension direction of the gas nozzles 140-1 to 140-6, that is, along the arrangement direction of the plurality of wafers W.

[0128] Similarly, in the second gas nozzle group 150, gas nozzles 150-1 to 150-6 are provided with multiple release ports H along the extension direction of the gas nozzles 150-1 to 150-6, that is, along the arrangement direction of the multiple wafers W.

[0129] Multiple release ports H are configured in the arrangement direction of multiple wafers W and at positions between adjacent wafers W, so that the inactive gas supply source 160 (refer to) Figure 5 The supplied inactive gas enters the adjacent wafer W (refer to) Figure 2 The way they interact with each other.

[0130] Furthermore, the multiple release ports H are configured, for example, to correspond to all the gaps of the multiple wafers W. That is, for example, in the case where a batch consists of 50 wafers W, 49 release ports H are provided at gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6 respectively.

[0131] like Figure 6 As shown, multiple release ports H are provided in the lower half of the cylindrical gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6. This allows for the suppression of the etching solution L (refer to...) Figure 2 Immerse it inside the gas nozzles 140-1 to 140-6 and 150-1 to 150-6.

[0132] In addition, multiple release ports H are located below the sides of gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6 and above the lower parts of gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6.

[0133] Therefore, compared to the case where the release port H is located at the lower part of gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6, the release direction of the inactive gas can be made consistent.

[0134] Moreover, in the implementation method, such as Figure 6 As shown, the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 are arranged vertically relative to the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140. For example, the gas nozzles 150-1 to 150-6 are arranged to contact the gas nozzles 140-1 to 140-6 at their lower parts.

[0135] Therefore, the release positions of the inactive gas can be aligned in the direction (X-axis direction) in which the gas nozzles are arranged, in the first gas nozzle group 140 and the second gas nozzle group 150.

[0136] Alternatively, gas nozzles 150-1 to 150-6 may be configured in a manner that does not contact gas nozzles 140-1 to 140-6. Furthermore, gas nozzles 150-1 to 150-6 may also be configured in a manner that contacts gas nozzles 140-1 to 140-6 at their respective upper parts.

[0137] Furthermore, in this invention, an example is provided where the release port H is located in the lower half of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6. However, the release port H can also be located in the upper half of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6. Additionally, the release port H can also be located on the side of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6.

[0138] Additionally, in the implementation method, such as Figure 7 As shown, the plurality of release ports H formed on the gas nozzles 150-1 to 150-6 are arranged at the same position relative to the plurality of release ports H formed on the gas nozzles 140-1 to 140-6 when viewed from above.

[0139] Therefore, the release positions of the inactive gas can be made consistent in the extension direction (Y-axis direction) of each gas nozzle in the first gas nozzle group 140 and the second gas nozzle group 150.

[0140] <Treatment of the release of inactive gases>

[0141] Below, refer to Figure 8 The details of the release process of releasing inactive gas into the etching solution L in the etching process apparatus 60, which has been described so far, will be explained. Figure 8 This is a graph showing the change over time in the gas supply pressure of the inactive gas in the first gas nozzle group 140 and the second gas nozzle group 150 of the embodiment.

[0142] Control Unit 7 (refer to) Figure 1 First, at time T1, multiple chips W (refer to...) Figure 2 )Send into processing tank 111 (refer to Figure 2 Furthermore, the control unit 7 commands the flow regulator 142 (see reference) at time T1. Figure 5 ) becomes open, and starts from the first gas nozzle group 140 (refer to Figure 5 It releases inactive gases.

[0143] Therefore, pressure gauge 162 (reference) Figure 5 The gas supply pressure measured and supplied to the first gas nozzle group 140 reaches a predetermined pressure value X at time T2, and is then maintained at that pressure value X. Furthermore, after time T1, the flow regulator 152 (refer to...) Figure 5 The second gas nozzle group 150 (see reference) also remains closed. Therefore, gas is not discharged from the second gas nozzle group 150 (see reference). Figure 5 It releases inactive gases.

[0144] On the other hand, in the release process of the inactive gas implemented from time T1, the etching solution L is released from the release port H (refer to...). Figure 6 Gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 flow in from the side (backflow) to the other side (refer to) Figure 3 ).

[0145] As a result, at the gas-liquid interface within gas nozzles 140-1 to 140-6, the silicon dioxide in the etching solution L is concentrated, dried, and crystallized. Furthermore, due to further crystallization, blockage occurs within gas nozzles 140-1 to 140-6.

[0146] Therefore, the gas supply pressure supplied to the first gas nozzle group 140 gradually increases over time, and reaches a predetermined first threshold X1 at time T3.

[0147] Here, in the embodiment, the control unit 7 considers that the first gas nozzle group 140 has become blocked when the gas supply pressure becomes a first threshold X1 or higher, and performs a process to switch the release nozzle from the first gas nozzle group 140 to the second gas nozzle group 150.

[0148] First, the control unit 7 changes the flow regulator 142 from the open state to the closed state at time T3. Next, at time T4 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow regulator 152 from the open state to the closed state, thereby starting the release of inactive gas from the second gas nozzle group 150.

[0149] Thus, the gas supply pressure for supplying gas to the second gas nozzle group 150, as measured by pressure gauge 162, becomes a predetermined pressure value X at time T5, and is thereafter maintained at that pressure value X.

[0150] Next, at time T6, after a predetermined processing time has elapsed from time T1, when the etching process of the multiple wafers W is completed, the control unit 7 changes the flow regulator 152 from the open state to the closed state. Then, at time T7, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 ejects the multiple wafers W from the processing tank 111.

[0151] As explained above, in the embodiment, in the release process of releasing inactive gas to the etching solution L, if the first gas nozzle group 140 becomes blocked, the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150.

[0152] Therefore, even if the first gas nozzle group 140 becomes clogged, the release process of releasing inactive gas into the etching solution L can continue. Thus, according to the embodiment, inactive gas can be stably released into the interior of the etching solution L stored in the processing tank 111.

[0153] Furthermore, in the embodiment, at time T3 when the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 controls the flow regulator 144 (refer to...) Figure 5 Adjust to the open position and open the first gas nozzle group to 140 atmospheres.

[0154] Therefore, etching solution L can be introduced into the interior of gas nozzles 140-1 to 140-6, and the introduced etching solution L can be used to etch and clean the crystals attached to the interior of gas nozzles 140-1 to 140-6.

[0155] That is, in the embodiment, the first gas nozzle group 140, which has become clogged, can be cleaned during the release process of inactive gases. Thus, even if the switched second gas nozzle group 150 becomes clogged, the release nozzle can be switched back to the cleaned first gas nozzle group 140.

[0156] Therefore, according to the embodiment, even if the second gas nozzle group 150 is blocked, the release process of releasing inactive gas into the etching solution L can continue, thus enabling more stable release of inactive gas into the interior of the etching solution L stored in the processing tank 111.

[0157] Additionally, in this embodiment, during the etching process of multiple wafers W starting at time T1, the control unit 7 may also keep the flow regulator 152 in the off state and keep the flow regulator 154 (see reference) Figure 5 The second gas nozzle group is in the open state, thereby opening the atmosphere to the second gas nozzle group 150.

[0158] Therefore, etching solution L can be introduced into the interior of gas nozzles 150-1 to 150-6, and the introduced etching solution L can be used to etch and clean the crystals that were previously attached to the interior of gas nozzles 150-1 to 150-6.

[0159] Therefore, according to the embodiment, the blockage of the second gas nozzle group 150 by the silicon crystal can be suppressed, thus enabling more stable release of inactive gas into the interior of the etching solution L stored in the processing tank 111.

[0160] In this embodiment, etching solution L is introduced into the unused gas nozzle group during the release process of inactive gas, and the gas nozzle group is then cleaned. This prevents clogging when switching the release nozzle to this gas nozzle group, thus enabling more stable release of inactive gas into the etching solution L stored in the processing tank 111.

[0161] Additionally, in the implementation method, such as Figure 6 As shown, the pipe diameters of gas nozzles 140-1 to 140-6 in the first gas nozzle group 140 should be approximately equal to the pipe diameters of gas nozzles 150-1 to 150-6 in the second gas nozzle group 150.

[0162] Therefore, even when switching between the first gas nozzle group 140 and the second gas nozzle group 150, approximately equal flow rates of inactive gas can be released into the etching solution L. Thus, according to this embodiment, a stable etching process can be performed even when switching between the first gas nozzle group 140 and the second gas nozzle group 150.

[0163] Furthermore, in this invention, it is not limited to the case that the pipe diameters of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 are approximately equal to the pipe diameters of the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150. For example, it is also possible that the pipe diameters of the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 are smaller than the pipe diameters of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140.

[0164] <Variation Example 1>

[0165] Below, refer to Figures 9-16 Various modifications of the substrate processing system 1 of the embodiments will be described. Figure 9 This is a schematic block diagram showing the structure of the piping connected to the gas release section 130 in a modified embodiment 1.

[0166] Furthermore, in the various variations below, the same reference numerals are used to mark the same parts as in the embodiments, thereby omitting repeated descriptions.

[0167] In Modification 1, inactive gas is supplied separately to each of the multiple gas supply passages 141a to 141c, and inactive gas is supplied separately to each of the multiple gas supply passages 151a to 151c.

[0168] Specifically, such as Figure 9 As shown, the gas supply passage 161 extending from the inactive gas supply source 160 branches into gas supply passages 161a, 161b, and 161c. A pressure gauge 162a is installed in gas supply passage 161a.

[0169] The pressure gauge 162a measures the pressure of an inert gas flowing in the gas supply passage 161a. Furthermore, the gas supply passage 161a branches downstream of the pressure gauge 162a into gas supply passages 141a and 151a.

[0170] A flow regulator 142a is provided in the gas supply passage 141a branching off from the gas supply passage 161a. The flow regulator 142a regulates the flow of gas to the gas nozzles 140-1 and 140-6 (see reference) of the first gas nozzle group 140. Figure 3 The amount of inactive gas supplied.

[0171] An open passage 143a is connected downstream of the flow regulator 142a in the gas supply passage 141a, and the open passage 143a is connected (communicated) to the external atmosphere via the flow regulator 144a.

[0172] Additionally, a flow regulator 152a is provided in the gas supply passage 151a branching off from the gas supply passage 161a. The flow regulator 152a regulates the flow of gas to the gas nozzles 150-1 and 150-6 (see reference) of the second gas nozzle group 150. Figure 4 The amount of inactive gas supplied.

[0173] An open passage 153a is connected downstream of the flow regulator 152a in the gas supply passage 151a, and the open passage 153a is connected (communicated) to the external atmosphere via the flow regulator 154a.

[0174] Additionally, a pressure gauge 162b is provided in the gas supply passage 161b, which branches off from the gas supply passage 161. This pressure gauge 162b measures the pressure of the inert gas flowing in the gas supply passage 161b. Furthermore, the gas supply passage 161b branches downstream of the pressure gauge 162b into gas supply passages 141b and 151b.

[0175] A flow regulator 142b is provided in the gas supply passage 141b, which branches off from the gas supply passage 161b. The flow regulator 142b regulates the flow of gas to the gas nozzles 140-2 and 140-5 (see reference) of the first gas nozzle group 140. Figure 3 The amount of inactive gas supplied.

[0176] An open passage 143b is connected downstream of the flow regulator 142b in the gas supply passage 141b, and this open passage 143b is connected (communicated) with the external atmosphere via the flow regulator 144b.

[0177] A flow regulator 152b is provided in the gas supply passage 151b, which branches off from the gas supply passage 161b. The flow regulator 152b regulates the flow of gas to the gas nozzles 150-2 and 150-5 (see reference) of the second gas nozzle group 150. Figure 4 The amount of inactive gas supplied.

[0178] An open passage 153b is connected downstream of the flow regulator 152b in the gas supply passage 151b, and the open passage 153b is connected (communicated) to the external atmosphere via the flow regulator 154b.

[0179] A pressure gauge 162c is provided in a gas supply passage 161c, which branches off from the gas supply passage 161. The pressure gauge 162c measures the pressure of the inactive gas flowing in the gas supply passage 161c. Furthermore, the gas supply passage 161c branches into gas supply passages 141c and 151c downstream of the pressure gauge 162c.

[0180] A flow regulator 142c is provided in the gas supply passage 141c, which branches off from the gas supply passage 161c. The flow regulator 142c regulates the flow of gas to the gas nozzles 140-3 and 140-4 (see reference) of the first gas nozzle group 140. Figure 3 The amount of inactive gas supplied.

[0181] An open passage 143c is connected downstream of the flow regulator 142c in the gas supply passage 141c. This open passage 143c is connected (communicated) with the external atmosphere via the flow regulator 144c.

[0182] A flow regulator 152c is provided in the gas supply passage 151c, which branches off from the gas supply passage 161c. The flow regulator 152c regulates the flow of gas to the gas nozzles 150-3 and 150-4 (see reference) of the second gas nozzle group 150. Figure 4 The amount of inactive gas supplied.

[0183] An open passage 153c is connected downstream of the flow regulator 152c in the gas supply passage 151c, and the open passage 153c is connected (communicated) to the external atmosphere via the flow regulator 154c.

[0184] In variation 1, which has such a piping structure, the control unit 7 (refer to...) Figure 1 It can switch the release nozzle between gas nozzles 140-1 and 140-6 in the first gas nozzle group 140 and gas nozzles 150-1 and 150-6 in the second gas nozzle group 150.

[0185] Specifically, similar to the embodiment described above, in Modification 1, the control unit 7 sets the flow regulator 142a to the open state, releasing inactive gas from gas nozzles 140-1 and 140-6 into the etching solution L. The gas supply pressure of this inactive gas is measured using a pressure gauge 162a.

[0186] If gas nozzles 140-1 and 140-6 become blocked and the gas supply pressure reaches or exceeds the first threshold X1, the control unit 7 sets the flow regulator 142a to the closed state and the flow regulator 152a to the open state. This allows the release nozzles to be switched from gas nozzles 140-1 and 140-6 to gas nozzles 150-1 and 150-6.

[0187] Furthermore, the control unit 7 sets the flow regulator 144a to the open state, thereby opening the gas nozzles 140-1 and 140-6 to the atmosphere. As a result, etching solution L can be introduced into the interior of the gas nozzles 140-1 and 140-6, thus enabling the interior of the gas nozzles 140-1 and 140-6 to be cleaned.

[0188] In addition, in Modification 1, as described above, the control unit 7 can switch the release nozzle between the gas nozzles 140-2 and 140-5 of the first gas nozzle group 140 and the gas nozzles 150-2 and 150-5 of the second gas nozzle group 150.

[0189] Furthermore, in Modification 1, as described above, the control unit 7 can switch the release nozzle between the gas nozzles 140-3 and 140-4 of the first gas nozzle group 140 and the gas nozzles 150-3 and 150-4 of the second gas nozzle group 150.

[0190] As explained so far, the present invention is not limited to controlling all gas nozzles of the first gas nozzle group 140 and the second gas nozzle group 150 together, but can also control individual gas nozzles independently.

[0191] In addition, in Modification 1, the six gas nozzles are divided into three groups and controlled independently. However, the present invention is not limited to this example. For example, all six gas nozzles can be controlled independently.

[0192] <Variations 2 and 3>

[0193] Figure 10 and Figure 11 This is a cross-sectional view showing an example of the configuration of the first gas nozzle group 140 and the second gas nozzle group 150 in modified examples 2 and 3 of the embodiments.

[0194] The second gas nozzle assembly 150 of the present invention is not limited to, for example Figure 6 As shown, relative to the case where the first gas nozzle group 140 is arranged in the vertical direction, it can also be as follows: Figure 10 As shown, they are arranged in a left-right (horizontal) direction.

[0195] Alternatively, it can be like Figure 11 As shown, the second gas nozzle group 150 of the present invention is arranged in a zigzag pattern (i.e., in the diagonal direction) relative to the first gas nozzle group 140.

[0196] <Variation Example 4>

[0197] Figure 12 This is a side view showing an example of the configuration of the first gas nozzle group 140 and the second gas nozzle group 150 in Modification 4 of the embodiment. Alternatively, as... Figure 12 As shown, the plurality of release ports H formed on the gas nozzles 150-1 to 150-6 are arranged at different positions relative to the plurality of release ports H formed on the gas nozzles 140-1 to 140-6 when viewed from above.

[0198] Therefore, when inactive gas is released from the lower second gas nozzle group 150, it is possible to prevent the released inactive gas from entering the upper first gas nozzle group 140.

[0199] <Variation Example 5>

[0200] Figure 13 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group 140 and the second gas nozzle group 150 of the modified embodiment 5.

[0201] In variation 5, the control unit 7 (refer to...) Figure 1 First, at time T11, multiple chips W (refer to...) Figure 2 )Send into processing tank 111 (refer to Figure 2 Furthermore, at time T11, control unit 7 commands flow regulator 142 (see reference). Figure 5 The first gas nozzle group 140 is in the open state, thus starting from the first gas nozzle group 140 (refer to...). Figure 5 It releases inactive gases.

[0202] Therefore, pressure gauge 162 (reference) Figure 5 The gas supply pressure measured and supplied to the first gas nozzle group 140 reaches a predetermined pressure value X at time T12, and is then maintained at that pressure value X. Furthermore, after time T11, the flow regulator 152 (refer to...) Figure 5 The second gas nozzle group 150 (see reference) also remains closed. Therefore, gas is not discharged from the second gas nozzle group 150 (see reference). Figure 5 It releases inactive gases.

[0203] On the other hand, during the release of inactive gas implemented from time T11, blockage occurs in gas nozzles 140-1 to 140-6. As a result, the gas supply pressure supplying gas to the first gas nozzle group 140 gradually increases over time, reaching or exceeding the predetermined first threshold X1 at time T13.

[0204] In this way, at time T13, the control unit 7 changes the flow regulator 142 from the open state to the closed state, and also changes the flow regulator 152 from the open state to the closed state. Thus, while stopping the release of inactive gas from the first gas nozzle group 140, the release of inactive gas begins from the second gas nozzle group 150.

[0205] Thus, the gas supply pressure for supplying gas to the second gas nozzle group 150, as measured by pressure gauge 162, becomes a predetermined pressure value X at time T14, and is thereafter maintained at that pressure value X.

[0206] Furthermore, in Modification 5, at time T13 when the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 instructs the flow regulator 144 (see reference) Figure 5 () is in the open state to open the first gas nozzle group 140 to the atmosphere.

[0207] Therefore, etching solution L is introduced into the interior of gas nozzles 140-1 to 140-6, and the introduced etching solution L is used to etch and clean the crystals adhering to the interior of gas nozzles 140-1 to 140-6.

[0208] Next, at time T15, after a predetermined processing time has elapsed from time T11, when the etching process of the multiple wafers W is completed, the control unit 7 changes the flow regulator 152 from the open state to the closed state. Then, at time T16, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 sends the multiple wafers W out of the processing tank 111.

[0209] As explained so far, in Modification 5, in the event of a blockage in the first gas nozzle group 140, the processes of stopping the release of inactive gas from the first gas nozzle group 140 and starting the release of inactive gas from the second gas nozzle group 150 are performed in parallel.

[0210] Therefore, during nozzle switching processing from the first gas nozzle group 140 to the second gas nozzle group 150, a temporary decrease in the amount of inactive gas released from the gas release section 130 can be suppressed. Thus, according to Modification 5, inactive gas can be released more stably into the etchant L stored in the processing tank 111.

[0211] <Variation Example 6>

[0212] Figure 14 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group 140 and the second gas nozzle group 150 of the modified embodiment 6.

[0213] In variation 6, the control unit 7 (refer to...) Figure 1 First, at time T21, multiple chips W (refer to...) Figure 2 )Send into processing tank 111 (refer to Figure 2 Furthermore, at time T21, control unit 7 instructs flow regulator 142 (see reference). Figure 5 The first gas nozzle group 140 is in the open state, thus starting from the first gas nozzle group 140 (refer to...). Figure 5 It releases inactive gases.

[0214] Therefore, pressure gauge 162 (reference) Figure 5The gas supply pressure measured and supplied to the first gas nozzle group 140 reaches a predetermined pressure value X at time T22, and is then maintained at that pressure value X. Furthermore, after time T21, the flow regulator 152 (see reference...) Figure 5 The second gas nozzle group 150 (see reference) also remains closed. Therefore, gas is not discharged from the second gas nozzle group 150 (see reference). Figure 5 It releases inactive gases.

[0215] On the other hand, during the release of inactive gas implemented from time T21, if certain problems occur in gas nozzles 140-1 to 140-6, the gas supply pressure supplying gas to the first gas nozzle group 140 will rise sharply and reach the specified second threshold X2 or higher at time T23.

[0216] The second threshold X2 is a value that is larger than the first threshold X1, for example, X2 = X + 2(X1 - X).

[0217] In this way, the control unit 7 changes the flow regulator 142 from the open state to the closed state at time T23. Then, at time T24 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow regulator 152 from the open state to the closed state, thereby starting to release inactive gas from the second gas nozzle group 150.

[0218] Thus, the gas supply pressure for supplying gas to the second gas nozzle group 150, as measured by pressure gauge 162, becomes a predetermined pressure value X at time T25, and is thereafter maintained at that pressure value X.

[0219] Furthermore, in Modification 6, at time T23 when the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 instructs the flow regulator 144 (see reference) Figure 5 () is in the open state to open the first gas nozzle group 140 to the atmosphere.

[0220] Therefore, etching solution L is introduced into the interior of gas nozzles 140-1 to 140-6, and the introduced etching solution L is used to etch and clean the crystals adhering to the interior of gas nozzles 140-1 to 140-6.

[0221] Next, at time T26, after a predetermined processing time has elapsed from time T21, when the etching process of the multiple wafers W is completed, the control unit 7 changes the flow regulator 152 from the open state to the closed state. Then, at time T27, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 ejects the multiple wafers W from the processing tank 111.

[0222] As explained so far, in Modification 6, when a problem occurs in the first gas nozzle group 140 and the gas supply pressure rises sharply to a level exceeding the second threshold x2, the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150.

[0223] Thus, in Modification 6, even if a problem occurs with one gas nozzle group, it is possible to stably release inactive gas into the interior of the etching solution L stored in the processing tank 111 by switching the release nozzle to another gas nozzle group.

[0224] <Variation Example 7>

[0225] Figure 15 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group 140 and the second gas nozzle group 150 of the modified embodiment 7.

[0226] In variation 7, the control unit 7 (refer to...) Figure 1 First, at time T31, multiple chips W (refer to...) Figure 2 )Send into processing tank 111 (refer to Figure 2 Furthermore, at time T31, control unit 7 commands flow regulator 142 (see reference). Figure 5 The first gas nozzle group 140 is in the open state, thus starting from the first gas nozzle group 140 (refer to...). Figure 5 It releases inactive gases.

[0227] Therefore, pressure gauge 162 (reference) Figure 5 The gas supply pressure measured for supplying gas to the first gas nozzle group 140 becomes the specified pressure value X at time T32.

[0228] However, if the gas supply pressure cannot be stabilized at the pressure value X due to some problem and rises further, even if the gas supply pressure becomes above the first threshold X1, the control unit 7 will continue to release from the first gas nozzle group 140 as long as it has just started to release inactive gas.

[0229] For example, during the period from the start of releasing the inactive gas T31 to the time T33 after a predetermined threshold (e.g., 120 seconds) has elapsed, the control unit 7 continues to release the inactive gas from the first gas nozzle group 140 even if the gas supply pressure becomes higher than the first threshold X1.

[0230] Therefore, when the gas supply pressure cannot stabilize immediately after the release of inactive gas and temporarily exceeds the first threshold X1, nozzle switching processes that are of low necessity can be suppressed. Furthermore, the processing after time T33 is the same as in the above-described embodiment, and therefore, its description is omitted.

[0231] <Variation Example 8>

[0232] Figure 16 This is a graph showing the change over time of the gas supply pressure of the inactive gas in the first gas nozzle group 140 and the second gas nozzle group 150 of the modified embodiment 8.

[0233] In variation 8, the control unit 7 (refer to...) Figure 1 First, at time T41, multiple chips W (refer to...) Figure 2 )Send into processing tank 111 (refer to Figure 2 Furthermore, at time T41, control unit 7 instructs flow regulator 142 (see reference). Figure 5 The first gas nozzle group 140 is in the open state, thus starting from the first gas nozzle group 140 (refer to...). Figure 5 It releases inactive gases.

[0234] Therefore, pressure gauge 162 (reference) Figure 5 The gas supply pressure measured and supplied to the first gas nozzle group 140 reaches a predetermined pressure value X at time T42, and is then maintained at that pressure value X. Furthermore, after time T41, the flow regulator 152 (see reference...) Figure 5 The second gas nozzle group 150 (see reference) also remains closed. Therefore, gas is not discharged from the second gas nozzle group 150 (see reference). Figure 5 It releases inactive gases.

[0235] Furthermore, in Modification 8, the control unit 7 performs nozzle switching processing even if the gas supply pressure has not reached or exceeded the first threshold X1 when time T43 is reached. This time T43 is the time elapsed from the time T41 when the release of inactive gas begins, which is a predetermined threshold time (e.g., 3600 seconds).

[0236] In this way, the control unit 7 changes the flow regulator 142 from the open state to the closed state at time T43. Then, at time T44 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow regulator 152 from the open state to the closed state, thereby starting to release inactive gas from the second gas nozzle group 150.

[0237] Thus, the gas supply pressure for supplying gas to the second gas nozzle group 150, as measured by pressure gauge 162, becomes a predetermined pressure value X at time T45, and is thereafter maintained at that pressure value X.

[0238] Furthermore, in Modified Example 8, at time T43 when the release nozzle is switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 instructs the flow regulator 144 (see reference) Figure 5() is in the open state to open the first gas nozzle group 140 to the atmosphere.

[0239] Therefore, etching solution L is introduced into the interior of gas nozzles 140-1 to 140-6, and the introduced etching solution L is used to etch and clean the crystals adhering to the interior of gas nozzles 140-1 to 140-6.

[0240] Next, at time T46, after a predetermined processing time has elapsed from time T41, when the etching process of multiple wafers W is completed, the control unit 7 changes the flow regulator 152 from the open state to the closed state. Then, at time T47, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 ejects the multiple wafers W from the processing tank 111.

[0241] As explained so far, in Modification 8, if the elapsed time for the release of inactive gas by one gas nozzle group (here, the first gas nozzle group 140) exceeds a predetermined threshold time, the release nozzle is switched to another gas nozzle group (here, the second gas nozzle group 150).

[0242] Therefore, clogging in the first gas nozzle group 140 and the second gas nozzle group 150 can be prevented in advance. Thus, according to Modification 8, the release of inactive gas into the etching solution L stored in the processing tank 111 can be more stable.

[0243] Furthermore, in the embodiments and various modifications described so far, an example of using pressure gauge 162 to determine whether there is a blockage in the gas nozzle assembly has been given, but the process of determining whether there is a blockage in the gas nozzle assembly is not limited to the case implemented using pressure gauge 162.

[0244] For example, a pressure gauge that measures the head pressure of the etching solution L stored in the processing tank 111 can be used to determine whether the gas nozzle assembly is blocked. For example, if the head pressure of the etching solution L measured by the pressure gauge is above a predetermined third threshold, the control unit 7 can also consider that the gas nozzle assembly that releases inactive gas is blocked and perform nozzle switching processing.

[0245] Therefore, even if one gas nozzle group becomes clogged, the release nozzle can be switched to another gas nozzle group, thus enabling the stable release of inactive gas into the etchant L stored in the processing tank 111.

[0246] The substrate processing apparatus (substrate processing system 1) of the embodiment includes a processing tank 111, a first gas nozzle group 140, a second gas nozzle group 150, and a control unit 7. The processing tank 111 immerses a plurality of arranged substrates (wafers W) in a processing liquid (etching solution L) for processing. The first gas nozzle group 140 is disposed inside the processing tank 111 at a position lower than the plurality of substrates (wafers W) and releases gas into the processing liquid (etching solution L) stored in the processing tank 111. The second gas nozzle group 150 is disposed close to the first gas nozzle group 140 and releases gas into the processing liquid (etching solution L) stored in the processing tank 111. The control unit 7 controls each unit. Furthermore, when the plurality of substrates (wafers W) are immersed in the processing liquid (etching solution L) for processing, the control unit 7 releases gas into the processing liquid (etching solution L) from one of the gas nozzle groups of the first gas nozzle group 140 and the second gas nozzle group 150. Furthermore, when the control unit 7 detects the specified switching conditions, it switches from releasing gas from one group of gas nozzles to releasing gas from another group of gas nozzles. This allows for the stable release of inactive gas into the etching solution L stored in the processing tank 111.

[0247] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the switching condition is the blockage information of the gas nozzles included in a gas nozzle group. Therefore, even if a gas nozzle group is blocked, the release process of releasing inactive gas into the etching solution L can continue.

[0248] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, information about blockage of the gas nozzle is detected when the gas supply pressure of the gas nozzle reaches or exceeds a predetermined first threshold value X1. This allows for high-precision detection of blockage in a group of gas nozzles.

[0249] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the switching condition is detected when the gas supply pressure of the gas nozzle becomes a predetermined second threshold X2 that is greater than the first threshold X1. Therefore, even if a problem occurs in one gas nozzle group, inactive gas can be stably released into the etchant L stored in the processing tank 111.

[0250] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, information on gas nozzle blockage is detected when the head pressure of the processing liquid (etching solution L) stored in the processing tank 111 reaches or exceeds a predetermined third threshold. This allows for high-precision detection of blockage in a group of gas nozzles.

[0251] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the switching condition is detected when the elapsed time of gas release in a gas nozzle group exceeds a predetermined threshold time. This allows for the prevention of clogging in the first gas nozzle group 140 and the second gas nozzle group 150 in advance.

[0252] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 7 opens one gas nozzle group to the atmosphere after switching from releasing gas from one gas nozzle group to releasing gas from another gas nozzle group. This allows for cleaning of the gas nozzle group without using it during the release of inactive gases, even if one of the gas nozzle groups has become clogged.

[0253] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the second gas nozzle group 150 is arranged vertically relative to the first gas nozzle group 140. This allows the release positions of the inactive gas to be aligned between the first gas nozzle group 140 and the second gas nozzle group 150 in the direction in which the gas nozzles are arranged.

[0254] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the plurality of release ports H formed in the second gas nozzle group 150 are arranged at the same position as the plurality of release ports H formed in the first gas nozzle group 140 when viewed from above. As a result, the release positions of the inactive gas can be aligned in the extending direction of each gas nozzle in the first gas nozzle group 140 and the second gas nozzle group 150.

[0255] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the gas nozzles 150-1 to 150-6 included in the second gas nozzle group 150 have piping diameters that are approximately equal to those of the gas nozzles 140-1 to 140-6 included in the first gas nozzle group 140. Therefore, even when switching between the first gas nozzle group 140 and the second gas nozzle group 150, it is possible to release approximately equal flow rates of inactive gas.

[0256] <Details of substrate processing>

[0257] Below, refer to Figures 17-22 Details of the substrate processing performed by the substrate processing system 1 in the embodiments and various modifications will be described. Figure 17 This is a flowchart illustrating the substrate processing flow of the implementation method.

[0258] First, the control unit 7 feeds multiple wafers W into the processing tank 111 (step S101). Then, the control unit 7 releases inactive gas from the first gas nozzle group 140 (step S102).

[0259] Next, the control unit 7 determines whether the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S103). Then, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is not greater than or equal to the first threshold X1 (step S103, No), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the plurality of wafers W (step S104).

[0260] Then, after the specified processing time has elapsed (step S104, Yes), the control unit 7 stops releasing inactive gas (step S105), and sends out multiple wafers W from the processing tank 111 (step S106), ending a series of substrate processing steps.

[0261] On the other hand, if the prescribed processing time has not been completed (step S104, no), the control unit 7 returns to the processing of step S103.

[0262] Furthermore, in the process of step S103, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold value X1 (step S103, Yes), the control unit 7 performs a nozzle switching process (step S107). This nozzle switching process is a process of switching the release nozzle from the first gas nozzle group 140 to the second gas nozzle group 150, and details will be explained later.

[0263] After the nozzle switching process, the control unit 7 then determines whether the gas supply pressure supplied to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S108). Then, if the gas supply pressure supplied to the second gas nozzle group 150 is not greater than or equal to the first threshold X1 (step S108, no), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the multiple wafers W (step S109).

[0264] Then, if the predetermined processing time has elapsed (step S109, yes), the control unit 7 proceeds to the processing in step S105. On the other hand, if the predetermined processing time has not elapsed (step S109, no), the control unit 7 returns to the processing in step S108.

[0265] In addition, during the processing in step S108, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S108, yes), the control unit 7 performs nozzle switching processing (step S110) and proceeds to the processing in step S103.

[0266] Figure 18This is a flowchart illustrating the process flow of the nozzle switching procedure in the embodiment. In this nozzle switching procedure, firstly, the control unit 7 stops releasing inactive gas from a group of gas nozzles that has been continuously releasing inactive gas (step S121).

[0267] Next, the control unit 7 releases inactive gas from another gas nozzle group (step S122). Then, the control unit 7 cleans the gas nozzle group by introducing etching solution L into the interior of the gas nozzle group (step S123), ending a series of nozzle switching processes.

[0268] Figure 19 This is a flowchart illustrating the nozzle switching process of Modification 5 of the embodiment. In the nozzle switching process of Modification 5, firstly, the control unit 7 stops releasing inactive gas from a group of gas nozzles that has been continuously releasing inactive gas (step S131).

[0269] In addition, in parallel with the process in step S131, the control unit 7 releases inactive gas from another gas nozzle group (step S132). Then, the control unit 7 cleans the gas nozzle group by introducing etching solution L into the interior of the next gas nozzle group (step S133), ending a series of nozzle switching processes.

[0270] Figure 20 This is a flowchart of the substrate processing flow of Modification 6 of the embodiment. First, the control unit 7 feeds multiple wafers W into the processing tank 111 (step S201). Then, the control unit 7 releases inactive gas from the first gas nozzle group 140 (step S202).

[0271] Next, the control unit 7 determines whether the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the second threshold x2 (step S203). Then, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is not greater than or equal to the second threshold x2 (step S203, no), the control unit 7 determines whether the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold x1 (step S204).

[0272] Then, if the gas supply pressure supplying gas to the first gas nozzle group 140 is not greater than the first threshold X1 (step S204, no), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the multiple wafers W (step S205).

[0273] Then, after the prescribed processing time has elapsed (step S205, yes), the control unit 7 stops releasing inactive gas (step S206), and sends out multiple wafers W from the processing tank 111 (step S207), ending a series of substrate processing.

[0274] On the other hand, if the prescribed processing time has not been completed (step S205, no), the control unit 7 returns to the processing in step S203.

[0275] In addition, during the processing of step S203, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the second threshold x2 (step S203, yes), the control unit 7 performs nozzle switching processing (step S208).

[0276] In addition, during the processing of step S204, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S204, yes), the control unit 7 performs nozzle switching processing (step S208).

[0277] After the nozzle switching process, the control unit 7 then determines whether the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the second threshold x2 (step S209). Then, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is not greater than or equal to the second threshold x2 (step S209, no), the control unit 7 determines whether the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold x1 (step S210).

[0278] Then, if the gas supply pressure supplying gas to the second gas nozzle group 150 is not greater than the first threshold X1 (step S210, no), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the multiple wafers W (step S211).

[0279] Then, if the prescribed processing time has elapsed (step S211, yes), the control unit 7 proceeds to the processing in step S206. On the other hand, if the prescribed processing time has not elapsed (step S211, no), the control unit 7 returns to the processing in step S209.

[0280] In addition, during the processing of step S209, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the second threshold x2 (step S209, yes), the control unit 7 performs nozzle switching processing (step S212) and proceeds to the processing of step S203.

[0281] In addition, during the processing of step S210, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S210, yes), the control unit 7 performs nozzle switching processing (step S212) and proceeds to the processing of step S203.

[0282] Figure 21This is a flowchart of the substrate processing flow of Modification 7 of the embodiment. First, the control unit 7 feeds multiple wafers W into the processing tank 111 (step S301). Then, the control unit 7 releases inactive gas from the first gas nozzle group 140 (step S302).

[0283] Next, the control unit 7 determines whether the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S303). Then, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is not greater than or equal to the first threshold X1 (step S303, No), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the plurality of wafers W (step S304).

[0284] Then, after the specified processing time has elapsed (step S304, Yes), the control unit 7 stops releasing inactive gas (step S305), and sends out multiple wafers W from the processing tank 111 (step S306), ending a series of substrate processing steps.

[0285] On the other hand, if the prescribed processing time has not been completed (step S304, no), the control unit 7 returns to the processing in step S303.

[0286] In addition, during the processing of step S303, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S303, yes), the control unit 7 determines whether the first gas nozzle group 140 has just started to release (step S307).

[0287] In step S307, the control unit 7 determines whether a predetermined threshold (e.g., 120 seconds) has elapsed since the release of inactive gas from the first gas nozzle group 140.

[0288] Then, if the first gas nozzle group 140 has just started to release (step S307, yes), the control unit 7 returns to the processing of step S303. On the other hand, if the first gas nozzle group 140 has not just started to release (step S307, no), the control unit 7 performs nozzle switching processing (step S308).

[0289] Next, the control unit 7 determines whether the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S309). Then, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is not greater than or equal to the first threshold X1 (step S309, No), the control unit 7 determines whether a predetermined processing time has elapsed since the start of the etching process of the multiple wafers W (step S310).

[0290] Then, if the prescribed processing time has elapsed (step S310, yes), the control unit 7 proceeds to the processing in step S305. On the other hand, if the prescribed processing time has not elapsed (step S310, no), the control unit 7 returns to the processing in step S309.

[0291] In addition, during the processing of step S309, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S309, yes), the control unit 7 determines whether the second gas nozzle group 150 has just started to release (step S311).

[0292] In step S311, the control unit 7 determines whether a predetermined threshold (e.g., 120 seconds) has elapsed since the release of inactive gas from the second gas nozzle group 150.

[0293] Then, if the second gas nozzle group 150 has just begun to release (step S311, yes), the control unit 7 returns to the process of step S309. On the other hand, if the second gas nozzle group 150 has not just begun to release (step S311, no), the control unit 7 performs nozzle switching processing (step S312). The process then proceeds to step S303.

[0294] Figure 22 This is a flowchart of the substrate processing flow of Modification 8 of the embodiment. First, the control unit 7 feeds multiple wafers W into the processing tank 111 (step S401). Then, the control unit 7 releases inactive gas from the first gas nozzle group 140 (step S402).

[0295] Next, the control unit 7 determines whether the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S403). Then, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is not greater than or equal to the first threshold X1 (step S403, no), the control unit 7 determines whether the release using the first gas nozzle group 140 has elapsed for a predetermined release time (step S404).

[0296] In step S404, the control unit 7 determines whether a predetermined threshold time (e.g., 3600 seconds) has elapsed since the release of inactive gas from the first gas nozzle group 140.

[0297] Then, if the release using the first gas nozzle group 140 has not reached the prescribed release time (step S404, no), the control unit 7 determines whether the prescribed processing time has elapsed since the start of the etching process of the multiple wafers W (step S405).

[0298] Then, after the prescribed processing time has elapsed (step S405, yes), the control unit 7 stops releasing inactive gas (step S406), and sends out multiple wafers W from the processing tank 111 (step S407), ending a series of substrate processing.

[0299] On the other hand, if the prescribed processing time has not been completed (step S405, no), the control unit 7 returns to the processing in step S403.

[0300] In addition, during the processing of step S403, if the gas supply pressure for supplying gas to the first gas nozzle group 140 is greater than or equal to the first threshold X1 (step S403, yes), the control unit 7 performs nozzle switching processing (step S408).

[0301] In addition, during the processing in step S404, if the first gas nozzle group 140 is configured to release for a predetermined time (step S404, yes), the control unit 7 performs nozzle switching processing (step S408).

[0302] After the nozzle switching process, the control unit 7 then determines whether the gas supply pressure supplied to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S409). Then, if the gas supply pressure supplied to the second gas nozzle group 150 is not greater than or equal to the first threshold X1 (step S409, No), the control unit 7 determines whether the release using the second gas nozzle group 150 has elapsed for a predetermined release time (step S410).

[0303] In step S410, the control unit 7 determines whether a predetermined threshold time (e.g., 3600 seconds) has elapsed since the release of inactive gas from the second gas nozzle group 150.

[0304] Then, if the release using the second gas nozzle group 150 has not reached the prescribed release time (step S410, no), the control unit 7 determines whether the prescribed processing time has elapsed since the start of the etching process of the multiple wafers W (step S411).

[0305] Then, if the prescribed processing time has elapsed (step S411, yes), the control unit 7 proceeds to the processing in step S406. On the other hand, if the prescribed processing time has not elapsed (step S411, no), the control unit 7 returns to the processing in step S409.

[0306] In addition, during the processing of step S409, if the gas supply pressure for supplying gas to the second gas nozzle group 150 is greater than or equal to the first threshold X1 (step S409, yes), the control unit 7 performs nozzle switching processing (step S412) and proceeds to the processing of step S403.

[0307] In addition, during the process of step S410, if the release time of the second gas nozzle group 150 has elapsed (step S410, yes), the control unit 7 performs nozzle switching processing (step S412) and transfers to the process of step S403.

[0308] The substrate processing method of this embodiment includes a gas release step (steps S102, S202, S302, S402) and a gas release switching step (steps S107, S208, S308, S408) performed in the substrate processing apparatus (substrate processing system 1) described above. In the gas release step, when multiple substrates (wafers W) are immersed in a processing liquid (etching solution L) and processed, gas is released into the processing liquid (etching solution L) from one of the gas nozzle groups 140 and 150. In the gas release switching step, when a predetermined switching condition is detected, the gas release is switched from one gas nozzle group to another. This allows for the stable release of inactive gas into the interior of the etching solution L stored in the processing tank 111.

[0309] The embodiments of the present invention have been described above. However, the present invention is not limited to the embodiments described above, and various modifications can be made without departing from its spirit. For example, in the embodiments described above, the case in which the polysilicon film formed on the wafer W was etched using SC-1 was described. However, the liquid treatment performed on the wafer W is not limited to this example.

[0310] For example, the technology of the present invention can also be applied when etching aluminum films or the like formed on wafer W using a mixed acid treatment solution (such as a mixture of phosphoric acid, acetic acid, and nitric acid). Furthermore, the technology of the present invention can also be applied when removing seed layers or the like formed on wafer W using SPM (a mixture of sulfuric acid and hydrogen peroxide).

[0311] In this way, when liquid processing is performed on wafer W, the technology of the present invention can be applied to liquid processing where the gas nozzle in the gas release section may become clogged.

[0312] It should be considered that the embodiments disclosed herein are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A substrate processing apparatus, characterized in that, include: A treatment tank in which multiple substrates arranged in a row are immersed in a treatment solution to treat them; The first gas nozzle group is disposed inside the processing tank at a position lower than the plurality of substrates, and releases gas into the processing liquid stored in the processing tank; A second gas nozzle group, which is arranged close to the first gas nozzle group, releases gas into the treatment liquid stored in the treatment tank; and The control department that controls all departments. When the plurality of substrates are immersed in the processing liquid and processed, the control unit releases gas into the processing liquid from one of the gas nozzle groups of the first gas nozzle group and the second gas nozzle group. When the control unit detects predetermined switching conditions, it switches from releasing gas from one group of gas nozzles to releasing gas from another group of gas nozzles. The switching condition is the blockage information of the gas nozzles included in the gas nozzle group.

2. The substrate processing apparatus as described in claim 1, characterized in that: The blockage information of the gas nozzle is detected when the gas supply pressure of the gas nozzle reaches or exceeds a predetermined first threshold.

3. The substrate processing apparatus as described in claim 2, characterized in that: The switching condition is detected when the gas supply pressure of the gas nozzle becomes a predetermined second threshold greater than the first threshold.

4. The substrate processing apparatus as described in claim 1, characterized in that: The blockage information of the gas nozzle is detected when the head pressure of the treatment liquid stored in the treatment tank reaches or exceeds a predetermined third threshold.

5. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: The switching condition is detected when the elapsed time of gas release in one of the gas nozzle groups exceeds a predetermined threshold time.

6. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: After switching from gas release from one gas nozzle group to gas release from another gas nozzle group, the control unit opens the atmosphere of the first gas nozzle group.

7. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: The second gas nozzle group is arranged vertically relative to the first gas nozzle group.

8. The substrate processing apparatus as described in claim 7, characterized in that: The plurality of release ports formed in the second gas nozzle group are configured in the same position as the plurality of release ports formed in the first gas nozzle group when viewed from above.

9. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: The gas nozzles included in the second gas nozzle group have piping diameters that are approximately equal to those included in the first gas nozzle group.

10. A substrate processing method, characterized in that: The substrate processing apparatus includes: a processing tank for processing a plurality of arranged substrates by immersing them in a processing liquid; a first gas nozzle group disposed inside the processing tank at a position below the plurality of substrates for releasing gas into the processing liquid stored in the processing tank; and a second gas nozzle group disposed close to the first gas nozzle group for releasing gas into the processing liquid stored in the processing tank. The substrate processing method includes the following steps performed in the substrate processing apparatus: The step of releasing gas into the treatment liquid from one of the gas nozzle groups of the first and second gas nozzle groups while the plurality of substrates are immersed in the treatment liquid: and The step of switching from gas release from one gas nozzle group to gas release from another gas nozzle group when the specified switching conditions are detected. The switching condition is the blockage information of the gas nozzles included in the gas nozzle group.

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