Emitter switching thyristor with trench-plane gate and method for manufacturing the same
By introducing a trench-planar truncation structure into the emitter switch thyristor, the high conduction power consumption and latch failure problems caused by the Snapback phenomenon are solved, and the effects of low turning voltage, low conduction loss and high maximum shutdown current are achieved.
CN114628507BActive Publication Date: 2025-03-28SHENZHEN SHANGDINGXIN TECH CO LTD
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Patent Information
- Application Number
- CN202210241564.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-03-11
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2042-03-11
AI Technical Summary
Technical Problem
The existing emitter switch thyristors have Snapback when they are turned on, resulting in large power consumption on the conduction and latching is prone to occur under large currents, resulting in device failure.
Method used
An emitter switch thyristor structure with a trench-plane trench is adopted. By setting overlapping p-base regions above the n-drift region and setting trenches on the left side of the p-base region on the left, the trench oxide layer and heavily doped polysilicon are filled to form a trench trench and a planar trench to improve the Snapback effect.
Benefits of technology
Significantly reduces conduction loss, improves maximum shutdown current, simplifies manufacturing processes, and improves the application circuit control complexity of the device.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention discloses an emitter switch thyristor with a trench-plane gate, with an n-drift region as a substrate, overlapping left and right p-base regions are arranged above the n-drift region, and n+ floating regions and n+ cathode regions are respectively arranged in the left and right p-base regions; a trench is arranged on the left side of the left p-base region, and the bottom of the trench is lower than the bottom of the p-base region to form a trench gate; a plane gate is arranged on the upper surface of the overlapping region of the p-base region and the n+ cathode region; the trench gate is connected to the plane gate to form a gate G; a p++ layer is arranged in the left and right p-base regions; an aluminum metallized cathode K is arranged on the right side of the n+ cathode region and the upper surface of the right side p-base region; an n buffer layer, a p+ anode region, and a metallized anode A are arranged in sequence on the lower surface of the n-drift region. The present invention also discloses a preparation method of the emitter switch thyristor. The device of the present invention has low turning voltage, low conduction loss, high maximum turn-off current, and is simple to manufacture.
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