Charged particle detector package for high speed applications

Abstract

A charged particle beam system can include a detector. A package for the detector can have a package body including two pin sets, each of the pin sets including two pins. Each pin of the pin sets can be configured to connect to one of two terminals of a sense element. The pins of different sets can be configured to connect to different ones of two terminals of a diode. The pin sets can be arranged to have a symmetry such that a magnetic field generated when a current passes through the pin sets is reduced due to the symmetry.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Application 62 / 931,123, filed November 5, 2019, which is incorporated herein by reference in its entirety. Technical Field

[0003] This article describes detectors that can be used in the field of charged particle beam systems, and more specifically, large effective area detector packages that can be used in applications requiring high speeds. Background Technology

[0004] During the manufacturing process of integrated circuits (ICs), incomplete or completed circuit components can be inspected to ensure they are manufactured according to design and free of defects. This inspection can be accomplished using a charged particle beam system that scans a primary beam across the sample and collects secondary particles generated from the sample at a detector.

[0005] Recently, with the continuous shrinking of ICs and other structures on semiconductor chips, scanning electron microscopy (SEM)-based inspection tools have gained attention. Electron beam tools such as SEMs project one or more electron beams onto the surface of a sample and can detect one or more secondary electron beams emitted from the sample. By correlating information associated with the secondary electron beams (e.g., intensity) with the scanning paths of the primary beams, a reconstructed image of the sample can be obtained. The image can provide information about the sample, such as surface profiles, material properties, and alignment information between different layers. Summary of the Invention

[0006] Embodiments of this disclosure provide systems and methods for charged particle beam imaging. In some embodiments, a charged particle beam system including a detector may be provided. A package for the detector may include a package body comprising two pin sets, each pin set including two pins. Each pin in the pin set may be configured to connect to a different terminal of two terminals of a sensing element that may include a semiconductor diode. The pin sets may be arranged with symmetry such that the magnetic field generated when current flows through the pin sets is reduced due to the symmetry.

[0007] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative only, and not intended to limit the disclosed embodiments as may be claimed. Attached Figure Description

[0008] The above and other aspects of this disclosure will become more apparent from the description of exemplary embodiments in conjunction with the accompanying drawings.

[0009] Figure 1This is a schematic diagram illustrating an exemplary electron beam inspection (EBI) system according to an embodiment of the present disclosure.

[0010] Figure 2 This is a schematic diagram of an exemplary arrangement of a wafer included in a loading / locking chamber according to an embodiment of the present disclosure, which may be... Figure 1 This is a part of an exemplary electron beam inspection system.

[0011] Figure 3A and Figure 3B This is a diagram illustrating a charged particle beam device according to an embodiment of the present disclosure, which may be an example of an electron beam tool.

[0012] Figures 4A to 4C A detector package for an exemplary comparison according to an embodiment of the present disclosure is shown.

[0013] Figure 4D Exemplary modules that can be connected to the detector package according to embodiments of the present disclosure are shown.

[0014] Figure 4E and 4F An exemplary pin is shown according to an embodiment of this disclosure.

[0015] Figures 5A to 5D An exemplary detector package according to an embodiment of the present disclosure is shown.

[0016] Figure 5E A magnetic field around a pin according to an embodiment of the present disclosure is shown.

[0017] Figure 6 Exemplary detector packaging and exemplary connection arrangements according to embodiments of the present disclosure are shown.

[0018] Figure 7 An exemplary sensing element according to an embodiment of the present disclosure is shown.

[0019] Figures 8A to 8C According to embodiments of this disclosure Figure 7 A cross-sectional view of the sensing element.

[0020] Figure 9A The top surface of an exemplary detector package according to an embodiment of the present disclosure is shown.

[0021] Figure 9B The bottom surface of an exemplary detector package according to an embodiment of the present disclosure is shown.

[0022] Figure 10 Exemplary detector packaging and exemplary connection arrangements according to embodiments of the present disclosure are shown.

[0023] Figure 11Exemplary detector packaging and exemplary connection arrangements according to embodiments of the present disclosure are shown.

[0024] Figure 12 An exemplary sensing element according to an embodiment of the present disclosure is shown.

[0025] Figure 13A and Figure 13B According to embodiments of this disclosure Figure 12 A cross-sectional view of the sensing element.

[0026] Figure 14A The top surface of an exemplary detector package according to an embodiment of the present disclosure is shown.

[0027] Figure 14B The bottom surface of an exemplary detector package according to an embodiment of the present disclosure is shown.

[0028] Figure 15 Exemplary detector packaging and exemplary connection arrangements according to embodiments of the present disclosure are shown.

[0029] Figure 16 Exemplary detector packaging and exemplary connection arrangements according to embodiments of the present disclosure are shown.

[0030] Figure 17 An exemplary detector, which may include a plurality of detector packages, is shown according to an embodiment of the present disclosure. Detailed Implementation

[0031] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, where the same reference numerals in different drawings denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with the invention. Rather, they are merely examples of devices, systems, and methods based on aspects relevant to the subject matter described in the appended claims.

[0032] Electronic devices consist of circuits formed on silicon wafers called substrates. Many circuits can be formed together on the same silicon wafer and are called integrated circuits or ICs. With advancements in technology, the size of these circuits has shrunk dramatically, allowing even more circuits to be assembled on the substrate. For example, the IC chip in a smartphone can be as small as a thumb but can include more than 2 billion transistors, each less than 1 / 1000th the size of a human hair.

[0033] Manufacturing these tiny ICs is a complex, time-consuming, and expensive process, typically involving hundreds of individual steps. Even an error in one step can result in a defect that renders the finished IC useless. Therefore, one goal of the manufacturing process is to avoid such defects in order to maximize the number of functional ICs manufactured in the process, i.e., to increase the overall yield of the process.

[0034] One component of increasing yield is monitoring the chip manufacturing process to ensure that a sufficient number of functional integrated circuits are produced. One way to monitor this process is to inspect the chip circuit structure at various stages of its formation. This can be done using a scanning electron microscope (SEM). SEMs can be used to image these extremely small structures, essentially taking "photographs" of them. This image can be used to determine if the structure is formed correctly and in the correct location. If the structure is defective, the process can be adjusted to make the defect less likely to recur. To increase throughput (e.g., the number of samples processed per hour), it is desirable to inspect as quickly as possible.

[0035] An image of a wafer can be formed by scanning the primary beam of a SEM system on the wafer and collecting particles (e.g., secondary electrons) generated from the wafer surface at a detector. The secondary electrons arriving at the detector can generate electrical signals within the detector. These signals can be output from the detector and processed by an image processor to form an image of the sample.

[0036] To process samples faster (e.g., to increase throughput), the SEM can be manipulated to scan samples more quickly, thereby increasing the "pixel rate" (e.g., the rate at which pixels form the resulting image). However, when attempting to improve detector performance for faster processing, various competing constraints exist when designing the detector.

[0037] One such constraint is encapsulation. SEM systems can be configured such that the detector can be electrically connected to other components in the system via pins. For example, the detector can be connected to a module with a receiver socket into which pins can be inserted. The use of pins facilitates the assembly and replacement of components. Because pins can be standardized components, they are easy to maintain and highly compatible.

[0038] However, existing packaging designs (such as those using pins) can encounter problems with electromagnetic effects, including, for example, parasitic inductance. Inductance refers to the property of a component, such as an electrical conductor or circuit, to resist changes in the current flowing through it. Inductance depends on the physical arrangement of the component and its material composition. Pins can have large conduction paths (e.g., thick pins) and can significantly contribute to parasitic inductance.

[0039] Parasitic inductance can affect other parameters of a detector. For example, high parasitic inductance may limit the maximum operating speed of the detector. A detector can be configured with low internal resistance, which in turn can be one reason for a high "Q factor." The Q factor can be a measure of energy loss or self-resonance in an electronic device. With lower energy loss, system oscillations may be larger and may dissipate more slowly. However, the combination of parasitic inductance and a high Q factor may mean that the detector's performance is hindered in the frequency range where operating the detector for high-speed imaging would be beneficial. For example, irregular responses may exist at high frequencies, thus limiting the usefulness of the higher frequency range, which may be the most useful range for high-speed image channel operation. Limiting the use of the higher frequency range may mean that the detector cannot be operated as quickly or as efficiently as possible, and therefore cannot increase productivity, as the detector takes longer to process the electrical signal.

[0040] Embodiments of this disclosure can address some of the problems associated with detectors using pins. For example, a detector package can be provided that reduces the effect of parasitic inductance without sacrificing some of the benefits of using pins. Therefore, the use of pins can be maintained. A package can be provided that includes combinations of alternately arranged pins, allowing parasitic parameters (e.g., parasitic inductance) to be reduced or eliminated. The physical arrangement of pins and other electrical components can reduce the effect of magnetic fields generated by the pins. The magnetic field generated by the current flowing through one pin can reduce the magnetic field generated by the current flowing through another pin.

[0041] Inductance can be related to the flow of current through a conductor. The flow of current in a conductor can generate a magnetic field around the conductor, the strength of which depends on the magnitude of the current. The magnetic field can be visualized using the "right-hand rule," which states that when a person's right thumb points in the direction of current flow along the length of the conductor, the fingers of the hand curl in the direction of the magnetic field around the conductor. Figure 4F An example of this effect is shown in the figure.

[0042] The magnetic field generated by the current flowing through a conductor may be related to parasitic inductance. The current flowing through the detector can be dynamic. For example, the current can be generated in the detector in response to secondary electrons arriving at the detector, and the number of secondary electrons arriving at the detector can change as the primary beam of the charged particle beam system scans between positions on the wafer. For example, the arrival rate and the energy of the secondary electrons falling on the detector can change along the scan path, and the current generated in the detector can change accordingly. Changes in the current flowing through the conductor may cause changes in the magnetic field strength around the conductor. Changes in magnetic field strength induce an electromotive force (EMF) in the conductor that is opposite to the voltage (e.g., "back EMF") that may generate the current change. This phenomenon can be called electromagnetic induction and can adversely affect the performance of the detector.

[0043] A pin can be a relatively large conductive structure included in the electronic circuitry of a detector. Due to the size and geometry of the detector including pins, magnetic fields may be generated that adversely affect performance. For example, a typical detector may include a sensing element having one pin connected to the anode (e.g., positive electrode) of the sensing element and another pin connected to the cathode (e.g., negative electrode). The direction of the current can be opposite between the two pins. Therefore, the magnetic field can be formed to coil around the first pin in one direction, and the magnetic field can be formed to coil around the second pin in the opposite direction. The magnetic fields can follow the superposition principle, meaning that at a point surrounded by the two magnetic fields, the net effect of the magnetic field at that point can be equal to the sum of the responses caused by each of the two fields individually. At the point between the two pins, the response of the first field (due to the first pin) can be in the same direction as the response of the second field (due to the second pin). If the responses caused by the respective fields are in the same direction, they can be added together. Therefore, there may be a region between the two pins where the magnetic field effect is amplified, which can affect parasitic inductance. Parasitic inductance can be a significant factor causing difficulties in operating detectors at high speeds.

[0044] In some embodiments of this disclosure, the detector package may include a sensing element having a first pin group and a second pin group. Multiple pins may be connected to the anode of the detection system, and multiple pins may be connected to the cathode of the detection system. This can divide the current flowing in the same direction among the multiple pins and can reduce the inductance generated by the current flow in each of the pins. The reduction in inductance can be relative to the current flowing between the cathode and a pin, and when the current flows between the anode and a pin. Furthermore, each pin group may include pins with opposite current flow directions. Each pin group may be positioned very close to the connection point between the electrode (e.g., the anode or cathode of the detection system) and the terminal of the sensing element. For example, two pins (one connected to the anode and one connected to the cathode) may be placed near the bonding pad. The pins may be configured such that the effects of the magnetic fields generated by the pins follow the superposition principle, and can be subtracted from each other in some regions rather than added to each other.

[0045] Additionally, the pins can be arranged alternately. Each group of pins may include a pin connected to the anode and a pin connected to the cathode. The arrangement of the pins in the first group may be the opposite of the arrangement in the second group. For example, in the first group, the pin connected to the cathode may be closer to the sensing element, while in the second group, the pin connected to the anode may be closer to the sensing element. A pin arrangement that reduces or eliminates parasitic inductance in the detector package can be used. Reducing parasitic inductance may involve a case where only one pin is connected to the cathode and only one pin is connected to the anode. The cancellation of opposing magnetic fields can be achieved in and around some areas of the detector package. Therefore, the energy that the magnetic field can store can be minimized or even reduced to zero (or close to zero). In this way, parasitic inductance in the detector package can be greatly reduced or eliminated.

[0046] The objectives and advantages of this disclosure can be achieved through the elements and combinations set forth in the embodiments discussed herein. However, embodiments of this disclosure are not necessarily required to achieve such exemplary objectives or advantages, and some embodiments may not achieve any of the stated objectives or advantages.

[0047] Some embodiments may be described in the context of providing detection systems and methods in systems utilizing electron beams (“e-beams”) without limiting the scope of this disclosure. However, this disclosure is not limited thereto. Other types of charged particle beams can be similarly applied. Furthermore, the systems and methods used for detection can be used in other imaging systems, such as optical imaging, photon detection, X-ray detection, ion detection, etc.

[0048] As used herein, unless otherwise specified, the term "or" covers all possible combinations except where it is not feasible. For example, if a component is described to include either A or B, then unless otherwise specified or not feasible, the component may include A, or B, or A and B. As a second example, if a component is described to include A, B, or C, then unless otherwise specified or not feasible, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0049] Now for reference Figure 1 , Figure 1 An exemplary electron beam inspection (EBI) system 10, which can be used for detection according to embodiments of the present disclosure, is illustrated. The EBI system 10 may include a scanning electron microscope (SEM) and can be used for imaging. Figure 1As shown, the EBI system 10 includes a main chamber 11, a loading / locking chamber 20, an electron beam tool 100, and an equipment front-end module (EFEM) 30. The electron beam tool 100 is located within the main chamber 11. The EFEM 30 includes a first loading port 30a and a second loading port 30b. The EFEM 30 may include additional loading ports(s). The first loading port 30a and the second loading port 30b receive a wafer front-opening unified pod (FOUP), which contains a wafer (e.g., a semiconductor wafer or a wafer made of (a variety of) other materials) or a sample (wafers and samples may be collectively referred to herein as “wafers”).

[0050] One or more robotic arms (not shown) in EFEM 30 can transfer the wafer to loading / locking chamber 20. Loading / locking chamber 20 is connected to a loading / locking vacuum pump system (not shown), which removes gas molecules from loading / locking chamber 20 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) can transfer the wafer from loading / locking chamber 20 to main chamber 11. Main chamber 11 is connected to a main chamber vacuum pump system (not shown), which removes gas molecules from main chamber 11 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by electron beam tool 100. Electron beam tool 100 can be a single-beam system or a multi-beam system. Controller 109 is electrically connected to electron beam tool 100 and may also be electrically connected to other components. Controller 109 may be a computer configured to perform various controls on EBI system 10. Although controller 109... Figure 1 The controller 109 is shown outside the structure comprising the main chamber 11, the loading / locking chamber 20, and the EFEM 30, but it should be understood that the controller 109 may be part of the structure.

[0051] Charged particle beam microscopy (such as that formed by or included in EBI system 10) can achieve resolutions at the nanometer scale and can be used as a practical tool for inspecting IC components on wafers. Using an electron beam system, electrons from a primary electron beam can be focused onto a probe spot on the wafer being inspected. The interaction between the primary electrons and the wafer can lead to the formation of a secondary particle beam. The secondary particle beam can include backscattered electrons, secondary electrons, or Auger electrons generated by the interaction between the primary electrons and the wafer. The characteristics (e.g., intensity) of the secondary particle beam can vary based on the properties of the wafer's internal or external structure and can therefore indicate whether the wafer contains defects.

[0052] A detector can be used to determine the intensity of the secondary particle beam. The secondary particle beam can form a beam spot on the surface of the detector. The detector can generate an electrical signal (e.g., current, voltage, etc.) representing the intensity of the detected secondary particle beam. A measurement circuit system, which may include additional components (e.g., an analog-to-digital converter), can be used to measure the electrical signal to obtain the distribution of the detected electrons. The electron distribution data collected during the detection time window, combined with the corresponding scan path data of the primary electron beam incident on the wafer surface, can be used to reconstruct an image of the inspected wafer structure. The reconstructed image can be used to reveal various features of the wafer's internal or external structure and can be used to reveal defects that may exist in the wafer.

[0053] Figure 2 An exemplary arrangement of a wafer 201 according to an embodiment of the present disclosure is illustrated. The wafer 201 may be included in the main chamber 11 and other components of the EBI system 10. Structures for holding the wafer 201 within the EBI system 10 may be provided. For example, as... Figure 2 As shown, the main chamber 11 may include a base plate 220 disposed on a worktable 210, the base plate 220 having a wafer holder provided for holding the wafer 201. The worktable 210 may be movable.

[0054] Electron beam tool 100 can be configured to generate a primary beam 241 that can be projected onto wafer 201. Electron beam tool 100 may include a primary source configured to emit a beam of charged particles along an optical axis onto a region of a sample, such as wafer 201. The optical axis of the primary source may be configured perpendicular to the sample. Stage 210 can be adjusted such that the X, Y, Z position, tilt, angular orientation, etc., of wafer 201 can be fine-tuned. Stage 210 can be moved to align a desired inspection area on wafer 201 within the field of view (FOV) of electron beam tool 100. The FOV of electron beam tool 100 can be defined by the range over which electron beam tool 100 is configured to deflect the primary beam 241. In some embodiments, electron beam tool 100 may include a large-FOV device configured to scan the primary beam 241 across a wide region on wafer 201. In some embodiments, electron beam tool 100 can be configured to generate multiple electron beams and deflect the multiple electron beams toward wafer 201. For example, electron beam tool 100 may include a multi-beam tool. In some embodiments, electron beam tool 100 may be configured to project a primary beam 241 directly downwards, while stage 210 is configured to move wafer 201 through various scanning positions.

[0055] like Figure 2As shown, a secondary beam 242 can be generated at the surface of wafer 201 in response to the incident primary beam 241. The secondary beam 242 can be guided by detector 140. Depending on, for example, the initial kinetic energy and emission angle from wafer 201, the particles in the secondary beam can have different trajectories. Although Figure 2 The secondary beam 242 is shown being guided toward detector 140 at an angle θ relative to the optical axis of electron beam tool 100; however, it should be understood that particles may arrive at detector 140 with a geometrical dispersion of landing sites. Representing the secondary beam 242 as a single line may be merely schematic. A beam spot can be formed on the surface of detector 140, which can be larger than the beam spot formed on the surface of wafer 201. Therefore, the total size of the detection surface of detector 140 can be configured to be large enough to accommodate a relatively wide beam spot. Detector 140 can also be configured to have a relatively large effective area capable of receiving particles from the secondary beam 242. The effective area of ​​detector 140 can correspond to the area of ​​the surface of the sensing element, which is configured to face wafer 201 and receive secondary particles.

[0056] Figure 3A A charged particle beam device according to an embodiment of the present disclosure is shown, which may be an example of an electron beam tool 100. Figure 3A An apparatus is shown in which the inspection system may include a single-beam inspection tool that uses only one primary electron beam at a time to scan one location on a wafer.

[0057] like Figure 3AAs shown, the electron beam tool 100A (also referred to herein as device 100A) can be a single-beam inspection tool used in the EBI system 10. Device 100A includes a wafer holder 136 supported by a motorized stage 134 to hold the wafer 150 to be inspected. The electron beam tool 100A includes an electron emitter that may include a cathode 103, an anode 121, and an electron gun aperture 122. The electron beam tool 100A also includes a beam confinement aperture 125, a focusing lens 126, a column aperture 135, an objective lens assembly 132, and a detector 144. In some embodiments, the objective lens assembly 132 may be a modified SORIL lens, which includes an electrode 132a, a control electrode 132b, a deflector 132c, and an excitation coil 132d. During imaging, an electron beam 161 emitted from the tip of cathode 103 can be accelerated by the voltage of anode 121, passed through bore 122, beam-limiting aperture 125, focusing lens 126, and focused into a probe spot 170 by a modified SORIL lens, and incident on the surface of wafer 150. The probe spot 170 can be scanned across the surface of wafer 150 by deflectors (such as deflector 132c or other deflectors in the SORIL lens). Secondary or scattered primary particles (such as secondary electrons emitted from the wafer surface or scattered primary electrons) can be collected by detector 144 to determine the intensity of the beam, thereby reconstructing an image of the region of interest on wafer 150.

[0058] An image processing system 199 may also be provided, comprising an image acquirer 120, a storage device 130, and a controller 109. The image acquirer 120 may include one or more processors. For example, the image acquirer 120 may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. The image acquirer 120 may be connected to the detector 144 of the electron beam tool 100A via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, the Internet, wireless network, radio, or a combination thereof. The image acquirer 120 may receive signals from the detector 144 and may construct an image. Therefore, the image acquirer 120 may acquire an image of the wafer 150. The image acquirer 120 may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquirer 120 may be configured to perform adjustments to the brightness and contrast of the acquired image, etc. The storage device 130 may be a storage medium such as a hard disk, random access memory (RAM), cloud storage, or other types of computer-readable storage. Storage device 130 may be coupled to image acquirer 120 and may be used to save scanned raw image data as an initial image and save post-processed images. Image acquirer 120 and storage device 130 may be connected to controller 109. In some embodiments, image acquirer 200, storage device 130 and controller 109 may be integrated together as an electronic control unit.

[0059] In some embodiments, the image acquirer 120 may acquire one or more images of a sample based on an imaging signal received from the detector 144. The imaging signal may correspond to a scanning operation for imaging charged particles. The acquired image may be a single image comprising multiple imaging regions, which may contain various features of the wafer 150. The single image may be stored in the storage device 130. Imaging may be performed based on imaging frames.

[0060] The focusing and illumination optics of an electron beam tool may include or be supplemented by an electromagnetic quadrupole electron lens. For example, such as Figure 3A As shown, the electron beam tool 100A may include a first quadrupole lens 148 and a second quadrupole lens 158. In some embodiments, the quadrupole lens can be used to control the electron beam. For example, the first quadrupole lens 148 can be controlled to adjust the beam current, and the second quadrupole lens 158 can be controlled to adjust the beam spot size and beam shape.

[0061] Figure 3AA charged particle beam apparatus is shown, wherein the inspection system can use a single primary beam, which can be configured to generate secondary electrons by interacting with a wafer 150. A detector 144 can be positioned along an optical axis 105, as shown. Figure 3A The illustrated embodiment. The primary electron beam can be configured to travel along the optical axis 105. Therefore, the detector 144 can include a hole at its center, allowing the primary electron beam to pass through to reach the wafer 150. Figure 3A An example of a detector 144 with an opening at its center is shown. However, some embodiments may use a detector positioned off-axis relative to the optical axis along which the primary electron beam travels. For example, as Figure 3B The embodiment shown, as discussed below, can provide a beam splitter 222 to guide the secondary electron beam to an off-axis detector. The beam splitter 222 can be configured to direct the secondary electron beam at an angle α toward the electron detection device 244, as... Figure 3B As shown.

[0062] Now refer to Figure 3B Let's discuss another example of a charged particle beam device. Electron beam tool 100B (also referred to herein as device 100B) can be an example of electron beam tool 100, and can be similar to... Figure 3A The electron beam tool 100A is shown. However, unlike device 100A, device 100B may include a multi-beam inspection tool that uses multiple primary electron sub-beams to simultaneously scan multiple locations on a sample.

[0063] like Figure 3B As shown, the electron beam tool 100B may include an electron source 202, a bore 204, a focusing lens 206, a primary electron beam 211 emitted from the electron source 202, a source conversion unit 212, multiple sub-beams 214, 216, and 218 of the primary electron beam 211, a primary projection optical system 220, and a wafer stage. Figure 3B (Not shown in the diagram) Multiple secondary electron beams 236, 238, and 240, a secondary optical system 243, and an electron detection device 244. The electron source 202 can generate primary particles, such as electrons from the primary electron beam 211. A controller, image processing system, etc., can be coupled to the electron detection device 244. The primary projection optical system 220 may include a beam splitter 222, a deflection scanning unit 226, and an objective lens 228. The electron detection device 244 may include detection sub-regions 246, 248, and 250.

[0064] The electronic source 202, the gun hole 204, the focusing lens 206, the source conversion unit 212, the beam splitter 222, the deflection scanning unit 226, and the objective lens 228 can be aligned with the primary optical axis 260 of the device 100B. The secondary optical system 243 and the electronic detection device 244 can be aligned with the secondary optical axis 252 of the device 100B.

[0065] Electron source 202 may include a cathode, extractor, or anode, wherein primary electrons may be emitted from the cathode and extracted or accelerated to form a primary electron beam 211 having crosses (virtual or real) 208. The primary electron beam 211 can be visualized as being emitted from the crosses 208. A bore 204 may block peripheral electrons of the primary electron beam 211 to reduce the size of probe spots 270, 272, and 274.

[0066] Source conversion unit 212 may include an image forming element array ( Figure 3B (not shown in the image) and beam-limited aperture array ( Figure 3B (Not shown in the image). Examples of source conversion unit 212 can be found in U.S. Patent No. 9,691,586; U.S. Publication No. 2017 / 0025243; and International Application No. PCT / EP2017 / 084429, which are incorporated herein by reference in their entirety. The image forming element array may include a micro-deflector or microlens array. The image forming element array may utilize multiple sub-beams 214, 216, and 218 of the primary electron beam 211 to form multiple parallel images (virtual or real) of crossover 208. A beam-limiting aperture array may limit the multiple sub-beams 214, 216, and 218.

[0067] Focusing lens 206 can focus the primary electron beam 211. The currents of the sub-beams 214, 216, and 218 downstream of source conversion unit 212 can be changed by adjusting the focusing capability of focusing lens 206 or by changing the radial dimension of the corresponding beam-limiting aperture within the beam-limiting aperture array. Focusing lens 206 can be an adjustable focusing lens, which can be configured such that the position of its first principal plane is movable. The adjustable focusing lens can be configured to be magnetic, which can cause off-axis sub-beams 216 and 218 to fall onto the sub-beam-limiting aperture by a rotation angle. The rotation angle varies with the focusing capability of the adjustable focusing lens and the position of the first principal plane. In some embodiments, the adjustable focusing lens can be an adjustable anti-rotation focusing lens, involving an anti-rotation lens having a movable first principal plane. Adjustable focusing lenses are further described in U.S. Publication No. 2017 / 0025241, the entire contents of which are incorporated herein by reference.

[0068] Objective lens 228 can focus sub-beams 214, 216 and 218 onto wafer 230 for inspection, and can form multiple probe spots 270, 272 and 274 on the surface of wafer 230.

[0069] Beam splitter 222 can be a Wien filter-type beam splitter that generates electrostatic and magnetic dipole fields. In some embodiments, if these are applied, the force exerted by the electrostatic dipole field on the electrons of sub-beams 214, 216, and 218 on the electrons can be equal in magnitude and opposite in direction to the force exerted by the magnetic dipole field on the electrons. Therefore, sub-beams 214, 216, and 218 can pass directly through beam splitter 222 with zero deflection angle. However, the total dispersion of sub-beams 214, 216, and 218 generated by beam splitter 222 can also be non-zero. Beam splitter 222 can separate secondary electron beams 236, 238, and 240 from sub-beams 214, 216, and 218 and direct the secondary electron beams 236, 238, and 240 to secondary optical system 243.

[0070] The deflection scanning unit 226 can deflect sub-beams 214, 216, and 218 to scan probe spots 270, 272, and 274 on regions of the surface of wafer 230. In response to the incident sub-beams 214, 216, and 218 at probe spots 270, 272, and 274, secondary electron beams 236, 238, and 240 can be emitted from wafer 230. The secondary electron beams 236, 238, and 240 can include electrons having an energy distribution including secondary electrons and backscattered electrons. The secondary optical system 243 can focus the secondary electron beams 236, 238, and 240 onto detection sub-regions 246, 248, and 250 of the electron detection device 244. The detection sub-regions 246, 248, and 250 can be configured to detect the corresponding secondary electron beams 236, 238, and 240 and generate corresponding signals for reconstructing an image of the surface of wafer 230. Detection sub-regions 246, 248, and 250 may include separate detector packages. Each detection sub-region may include a single sensing element.

[0071] Now for reference Figures 4A to 4F , Figures 4A to 4F An example of a detector package for comparison according to an embodiment of the present disclosure is shown. Figure 4A This is a top perspective view of detector package 300. Detector package 300 may include a substrate 310, a sensing element 320, a pin 330, and a coupling member 340. Pin 330 may include two pins, such as a first pin 331 and a second pin 332. Pin 330 may be provided as a standardized component. For example, pin 330 may be an easily available component manufactured according to industry standards. Figure 4E An example of a pin is shown. A pin may include a head 336 and a shaft 337.

[0072] like Figure 4A As shown, a sensing element 320 may be disposed on a substrate 310. The sensing element 320 may include a semiconductor diode. The diode may be configured to convert incident energy (e.g., incident secondary electrons) into a measurable signal. In some embodiments, the sensing element 320 may be integrated with the substrate 310. In some embodiments, the sensing element 320 may be disposed on top of the top surface 311 of the base 310. The sensing element 320 may be connected to a pin 330 via a bonding member 340. The sensing element 320 may include electrode portions, such as an anode connection portion and a cathode connection portion. The electrode portions may include bonding pads, such as a first pad 321 and a second pad 322. The bonding member 340 may include bonding wires 341 and 342. Bonding wire 341 may be connected at one end to the first pad 321 of the sensing element 320 and at the other end to the head of the first pin 331. Bonding wire 342 may be connected at one end to the second pad 322 of the sensing element 320 and at the other end to the head of the second pin 332. Connecting wires 341 and 342 can be soldered to some components. The electrical signal generated in the sensing element 320 can be transmitted through the connecting member 340 and pin 330 to other components of the detection system. For example, analog or digital signal processing paths can be provided.

[0073] like Figure 4B As shown, pins can extend through the detector package. The shafts of the first pin 331 and the second pin 332 are visible on the underside of the detector package 300. The detector package 300 may include a bottom surface 315. The shaft of pin 330 can extend through a hole in the substrate 310 through the detector package 300.

[0074] like Figure 4C As shown, detector package 300 can be connected to module 350. Module 350 may include socket 360. Socket 360 may be configured to receive pin 330. Socket 360 may include conductive portions. Figure 4D This is a top view of module 350. The socket 360 may include a first socket 361 configured to connect to a first pin 331 and a second socket 362 configured to connect to a second pin 332. Multiple sockets may be provided in module 350. The arrangement of the sockets 360 in module 350 may be preset. The distance between the individual sockets 360 may be predetermined. This distance may be set based on the size of the pin 330. For example, because the pin includes a head 336 that may have a predetermined size, the distance between the sockets 360 may be set to a predetermined distance or greater to accommodate pins placed adjacent to each other. Module 350 may be adaptable such that the detector package 300 can be inserted into any two adjacent sockets of the sockets 360.

[0075] Signals generated in detector package 300 can be routed into signal processing paths. These paths can have both analog and digital components. For example, there may be a portion (e.g., an analog portion) that includes wires transmitting the raw signal to another component. There may also be another portion (e.g., a digital portion) that includes semiconductor logic or other components in which operation can occur. To enhance detector performance, it is desirable for the detector package to process numerous signals routed through the analog portion rapidly. For high-speed imaging, it is desirable to enhance the bandwidth in the analog portion.

[0076] Figure 4E This is a side view of a pin with a head 336 and a shaft 337. Aspects of the pin can be predetermined, such as material, size, etc. The pin can be an electrical conductor. The pin can be configured to transmit electrical signals (e.g., current) through it. Figure 4F The effect of current flowing through the pin is shown. The pin can be connected to a circuit such that current is introduced through head 336 and flows through shaft 337. Current I can flow from head 336 to the opposite end of the pin. As current I flows through the pin, a magnetic field B is generated. Magnetic field B can have both strength and direction. According to the right-hand rule, Figure 4F The magnetic field lines shown indicate the direction of the magnetic field as it is coiled counterclockwise around axis 337.

[0077] In operation, detector package 300 can receive incident charged particles and generate a signal in response. This signal can be an electrical signal, such as an electric current. The signal can be transmitted outside detector package 300 via pin 330. Detector package 300 can use sensing element 320 to generate the signal. Sensing element 320 may include a large effective area sensing element.

[0078] In some embodiments, a single-beam SEM may include a single-sensing element detector. To ensure high resolution, a large field of view (FOV), and low distortion within the FOV of the primary charged particle beam, achieving a high collection rate of secondary particles (e.g., secondary electrons) may be important. A large effective area sensing element can be used to achieve a high secondary electron collection rate. Additionally, to simplify the electron optics design (e.g., by omitting elements such as…), Figure 3B In the secondary optical system 243, employing a large effective area sensing element may be useful. A large effective area sensing element can compensate for the potentially increased dispersion of secondary particles landing on the detector. For example, without secondary optics, electrons arriving on the detector may land with a wider geometric dispersion.

[0079] In some embodiments, multi-beam SEM can use a detector with multiple detection regions. Each detection region may include a single sensing element detector. An array of sensing elements (e.g., a 3×3 array) may be provided. Each sensing element in the sensing elements may be configured to have a large effective area.

[0080] Semiconductor detectors can be used to improve the signal-to-noise ratio (SNR) in detection systems, compared to Everhart-Thornley detectors (ETDs), which can use, for example, scintillators and photomultiplier tubes (PMTs). Semiconductor detectors can also be used to implement large effective area sensing elements. However, various difficulties may arise when using large effective area sensing elements to improve the analog bandwidth of the detector's image channel.

[0081] Some of the problems associated with large effective area sensing elements encountered when used in semiconductor electronic detectors may include, for example:

[0082] 1. A large effective area of ​​the sensing element can lead to a large parasitic capacitance.

[0083] 2. Compatibility with existing components (such as pins) should be maintained.

[0084] 3. To enhance high-speed operation, the equivalent series resistance of the detector should be kept low. This may result in a high Q factor, which may indicate low damping and could lead to self-resonance that could affect high-frequency operation.

[0085] 4. Detector designs that include pins can have large parasitic inductance. Parasitic inductance can hinder operation of the detector at higher frequency ranges. This can impede high-speed operation.

[0086] Some of the issues mentioned above can be addressed by adjusting aspects of the detector design. Others may be more difficult to resolve. For example, parasitic capacitance can be closely related to the surface area of ​​the detector's effective area (e.g., the region of the sensing element exposed to and responding to incident secondary electrons). If the design requires a large effective area detector, attempting to reduce parasitic capacitance by decreasing the surface area of ​​the sensing element may not be an option. Parasitic capacitance can complicate detector design. Standards for large effective areas may themselves impose design constraints on the detector, and high parasitic capacitance may make it difficult to design detectors for high analog bandwidth image channels.

[0087] Furthermore, compatibility with existing components may be important for the following exemplary reasons: Existing packages can use pins for easy assembly and replacement. In detector designs, pins may not be easily replaceable using another component. SEM systems can follow predetermined maintenance procedures. The use of pins can improve the ease of subsequent maintenance procedures. Pins can be installed and replaced by the operator, while other connection mechanisms may be complex and require skilled technicians for maintenance.

[0088] However, the use of pins can be one of the reasons for parasitic parameters such as parasitic inductance. Pins may be relatively large and may need to be placed at relatively large intervals to prevent them from contacting each other (and may require predetermined gaps). For example, because the head of a pin can be wide, pins may need to be spaced relatively long, so that adjacent heads have gaps between them. The conduction path between the pin and other components can also be relatively long. Pins with large size and long conduction paths can be one of the reasons for parasitic inductance.

[0089] As an alternative or addition to the pin, the connection structure may include a bonding wire. Additionally, a trace (e.g., a strip of conductive material patterned on the device) may be provided. Bonding wires and traces can be easily optimized. For example, the circuit design can be modified to allow for shorter bonding wire lengths. Furthermore, multiple bonding wires can be provided in parallel for a single connection. This can reduce the amount of current flowing through each individual wire.

[0090] The parasitic parameters of the junction lines can be reduced with relatively little effort. For example, as mentioned above, the system can be designed to minimize the length of the junction lines or to arrange multiple lines in parallel. On the other hand, the parasitic parameters of pins or traces may be relatively difficult to reduce. Reducing the parasitic inductance of a pin may not be as straightforward as, for example, shortening the length of the junction line. The geometry of the pin can be set but cannot be changed.

[0091] In some embodiments, using some engagement wires with the pins may be useful. However, it may be necessary to maintain the use of some pins, and therefore, for compatibility reasons mentioned above, the use of pins may not be completely eliminated.

[0092] Electrical systems such as detectors may exhibit self-resonant properties. For example, a detector may be configured with low internal resistance for high-speed operation. The equivalent series resistance of the detector may be kept low. This can contribute to detectors with high Q factors. In the case of high Q factors, oscillations within the detector may be relatively large. Furthermore, the system may have relatively low internal damping (e.g., experiencing low energy loss) and oscillations may take a relatively long time to subside. The Q factor may involve parasitic parameters. In particular, high parasitic inductance can be one of the causes of a high Q factor. When the Q factor is high, the system may have a high degree of self-resonance. Detectors with high self-resonance may exhibit irregular responses over certain frequency ranges. For example, a detector may exhibit a predictable response within a specific range where self-resonance does not occur. However, the detector may exhibit different responses at resonant frequencies outside of that specific range. Regions of irregular response may limit the potential use of the detector over a wider operating frequency range. Self-resonance can cause irregular responses in the high-frequency region, thus limiting the usefulness of the detector in the higher frequency range. To enhance detector performance over a wide frequency range (e.g., including higher frequency ranges where it may be desirable to operate the detector for high-speed image channel operation), reducing or eliminating the detector's self-resonant properties can be useful. Parasitic inductance can be one of the causes of self-resonance, therefore reducing the parasitic inductance in the detector to enhance its performance may be beneficial.

[0093] Self-resonance can refer to the phenomenon that a system may resonate. There may be a frequency range where self-resonance can occur. A detector with a large effective area may have a relatively low frequency at which self-resonance may begin to occur. The nature of self-resonance can depend on the specific dimensions of the detector components, such as the measurement of the effective area. A detector with an area greater than or equal to a certain threshold (e.g., 100 mm²) may exhibit this characteristic. 2 A detector with an effective area of ​​[missing information] may have self-resonance at a frequency less than or equal to a first frequency (e.g., 300 MHz). This first frequency can be included in the region where the detector is desired to operate for high-speed image channel operation. However, due to self-resonance, the detector may exhibit a non-constant group delay in the frequency range corresponding to high-speed image channel operation.

[0094] In some embodiments, pins may be added, and these pins may be connected in parallel to the detector terminals. Using multiple pins connected in parallel can reduce parasitic inductance to some extent. For example, the current flowing through each pin can be reduced. However, this may still leave room for the desired improvement in detector performance. Furthermore, as analog bandwidth increases, designing detectors with reduced parasitic inductance to achieve high-speed image channel operation may become increasingly difficult.

[0095] In some embodiments, the detector package may include two pins for each detection unit. A detection unit may include a single, continuous region in which an effective area capable of receiving charged particles may be defined. A detection unit may include a sensing element. In some embodiments, the detector may include multiple detection units. Each detection unit may be configured to receive a beam spot of a different secondary beam. In some embodiments, the same beam spot may cover more than one detection unit. A detector comprising multiple detection units may refer to the effective area of ​​each of the separate detection units as a sub-area.

[0096] As discussed above, Figure 4A A detector package 300 is shown, comprising a sensing element 320 and two pins 330. The detector package 300 can be configured to generate a signal current in response to secondary electrons received at the sensing element 320. The signal current can be configured to flow through the pins 330. For example, when secondary electrons are received at the sensing element 320, a current can be generated and flow out through a first pad 321 and a first pin 331. The first pin 331 can be connected to an analog signal processing path. The current can also flow in the opposite direction through the pin 332. A magnetic field can be generated when the current flows through the pins 330. The magnetic field can be related to parasitic inductance in the detector package 300.

[0097] Figure 5A A detector package 500 having a plurality of pins according to an embodiment of the present disclosure is shown. Similar to detector package 300, detector package 500 may include a substrate 510 having a top surface 511. The substrate 510 may include a ceramic material. The substrate 510 may include a substrate. Detector package 500 may include a sensing element 320 on the top surface 511. However, unlike detector package 300, detector package 500 may be configured to connect to a plurality of pin groups. A first pin group 530A and a second pin group 530B may be provided. Each of the first and second groups may include a plurality of pins. The first group 530A may include pins 531 and 533. The second group 530B may include pins 532 and 534.

[0098] Sensing element 320 can be connected to all pins 531, 532, 533, and 534. Pins 532 and 533 can be configured to connect to the anode. Pins 531 and 534 can be configured to connect to the cathode. Pins 531, 532, 533, and 534 can (e.g., through socket 360 of module 350) (see...) Figure 4DThe sensing element 320 can be configured such that separate terminals are connected to separate sets of pins in the first set 530A and the second set 530B. A "set" can refer to a set of pins electrically connected to each other. A "group" can refer to a set of pins located near each other. Pins in a group can be positioned near the terminals of the sensing element or near the points where they are connected to the terminals. Connections can be made via bonding pads (e.g., first pad 321 and second pad 322). Connections can also be made via bonding wires (…). Figure 5A (Not shown in the image) to complete this. The pins in the first group 530A can be arranged adjacent to the first pad 321. The pins in the second group 530B can be arranged adjacent to the second pad 322. The pins in the first group 530A can be aligned with the first pad 321 (e.g., in...). Figure 5A (in the horizontal direction of the view). The pins in the second group 530B can be aligned with the second pad 322 (e.g., in the horizontal direction of the view). Figure 5A (in the horizontal direction of the view).

[0099] Pins in different groups can be connected to each other. For example, such as Figure 5A As shown, pins 531 and 534 can be connected via trace 551. Trace 551 may include a conductive material. For example, trace 551 may include a copper layer deposited on the top surface 511 of substrate 510. Furthermore, pins 532 and 533 can be connected via trace 552. Traces 551 and 552 may be separate from each other. In some embodiments, traces 551 and 552 may include wires. The dimensions of the wires (e.g., the width and height of the material constituting the wires) can be adjusted to adjust the impedance. For example, trace 552 may utilize the relatively large proportion of the surface area of ​​the top surface 511 between pins 532 and 533 to minimize impedance.

[0100] The pins for electrical connections can form a set. For example, such as... Figure 5E As shown, the first pin set 530X may include pins 531 and 534. The second pin set 530Y may include pins 532 and 533. Figure 5A As shown, the pins in the respective sets can be connected by traces (such as trace 551, which can connect pins 531 and 534, and trace 552, which can connect pins 532 and 533). The connection can also be accomplished by traces on the bottom surface of the base 510 (see [reference]). Figure 5D ).

[0101] The connection from sensing element 320 to pins 531, 532, 533 and 534 can be made via the joint line landing position. Figure 5AA first bonding pad 546 and a second bonding pad 547 are shown. The bonding wire can be attached to traces 551 and 552 at portions not covered by pins. The portions not covered by pins can form open spaces for accommodating the bonding wire. For example, Figure 6 A bonding wire 541 connected to trace 551 and a bonding wire 542 connected to trace 552 are shown. Traces 551 and 552 can be configured to provide bonding wire landing sites in areas close to sensing element terminals (such as first pad 321 or second pad 322). In some embodiments, the first bonding wire landing pad 546 can be aligned with the first pad 321 (e.g., at...). Figure 5A (in the horizontal direction of the view). The second bonding line landing pad 547 can be aligned with the second pad 322 (e.g., in the horizontal direction of the view). Figure 5A (In the horizontal direction of the view). The length of the joining line can be minimized.

[0102] The pins in the first group 530A can be arranged adjacent to each other. The pins in the first group 530A can be positioned adjacent to the connection point between the electrode and the pin. The electrode may include a terminal of a sensing element. For example, pins 531 and 533 may be in the region near the first bonding wire landing pad 546. Similarly, the pins in the second group 530B can be arranged adjacent to each other. The pins in the second group 530B can be positioned adjacent to the connection point between the electrode and the pin. For example, pins 532 and 534 may be in the region near the second bonding wire landing pad 547. The pins can be configured to be spaced apart from each other by a predetermined space. The predetermined space may correspond to a predetermined interval. This predetermined interval may take into account the diameter of the pin head 336 plus the gap distance. The adjacent pins can be positioned, for example, such that they are separated, wherein the space between them does not exceed one diameter of the pin head.

[0103] The detector package 500 can be configured such that current can flow in a predetermined direction between pins 531, 532, 533, and 534. In operation, when the sensing element 320 is connected to pins 531, 532, 533, and 534 via traces 551 and 552, current can flow in opposite directions within the same group of pins. Current can flow in the same direction between pins in the same group. For example, pins 531 and 534 can be connected to the cathode, while pins 532 and 533 can be connected to the anode. In the first group 530A, current can flow through pin 531 in a first direction, and current can flow through pin 533 in the opposite direction. Furthermore, current can flow in the same direction between pins in different groups. For example, pin 533 in the first group 530A can flow in the same direction as pin 532 in the second group 530B. Pins 533 and 532 can be in the same group.

[0104] The detector package 500 can be configured such that the pins are arranged symmetrically. This symmetry allows the magnetic field generated by the pins to be reduced or canceled out. The magnetic field generated by a single pin can reduce or cancel out the magnetic field generated by adjacent pins or groups of pins. The magnetic field generated by all pins can be reduced or canceled out entirely. Figure 5A As shown, pins 531, 532, 533, and 534 are arranged in a 2×2 grid. The pins may have rotational symmetry about an axis at the center of the 2×2 grid. The symmetry may be based on which pin is connected to the anode or cathode. For example, the position of an anode connection (e.g., pin 533) can be rotated 180 degrees about the axis to reach the position of another anode connection (e.g., pin 532). At the axis at the center of the 2×2 grid, there may be a region where the magnetic field generated by the pins is reduced or canceled out. The reduction of the magnetic field may refer to the effect of the magnetic field generated by the current flowing through one pin reducing the magnetic field generated by the current flowing through another pin.

[0105] In some embodiments, the symmetry of the pins can be represented by the set of pins. A set of pins may include pins connected to the same terminal. A terminal may refer to either the cathode or anode of the sensing system. Each pin in a set may be connected to a terminal of the sensing element. For example, a first set of pins may include pins 531 and 534. A second set of pins may include pins 532 and 533. These sets of pins may be symmetrical to each other. Figure 5A In the arrangement (see also) Figure 5E The set of pins can form an X shape. The set of pins can be rotationally symmetric about an axis at the center of the X shape.

[0106] Pins can be arranged alternately. For example... Figure 5A As shown, the pins in the first group 530A are arranged in a first order (e.g., pin 533 connecting the anode, pin 531 connecting the cathode), while the pins in the second group 530B are arranged in a second order alternating with the first order (e.g., pin 534 connecting the cathode, pin 532 connecting the anode). In adjacent pin groups, the positions of the pins connected to the anode and cathode can be switched. For example, in the first group 530A, the positions of the pins connecting the anode (e.g., pin 533) and the pins connecting the cathode (e.g., pin 531) can be opposite to those in the second group 530B. This position can refer to the pin being located on the terminal side or the distal side. For example, pin 531 can be adjacent to the first pad 321 (e.g., on the terminal side). Pin 533 can be distal to the first pad 321 (e.g., on the distal side).

[0107] Each pin in the pin group can be positioned close to a landing pad on the bonding line of the detector package. For example... Figure 5AAs shown, pins 531 and 533 in the first group 530A can be arranged close to the first bonding pad 546. In some embodiments, the first bonding pad 546 can be arranged between pins 531 and 533. Moreover, as Figure 5A As shown, pins 532 and 534 in the second group 530B can be arranged close to the second bonding pad 547. In some embodiments, the second bonding pad 547 can be arranged between pins 532 and 534. Furthermore, each bonding pad can be arranged close to the corresponding bonding pad of the die to which the bonding wire is connected. For example, the first bonding pad 546 can be arranged close to the first pad 321 of the sensing element 320, and the second bonding pad 547 can be arranged close to the second pad 322 of the sensing element 320.

[0108] Detector package symmetry can reduce or cancel the magnetic field generated within the detector package. This magnetic field can be generated by the detector signal current, which can flow through junction lines, traces, and pins. A symmetrical detector package can minimize or reduce the magnetic field generated within and around the detector package to zero (or near zero). In this way, parasitic inductance within the detector package can be reduced.

[0109] For example, Figure 5E The arrangement of a first pin set 530X and a second pin set 530Y is shown. The first set 530X may include pins 531 and 534. The first pin set 530X may be connected to a cathode. The pins in the first set 530X can be connected to each other via trace 551. Figure 5E (Not shown in the image). The pins in the first set 530X can be connected to the first terminal of the sensing element. The second set 530Y may include pins 532 and 533. The pins in the second set 530Y can be connected to the anode. The pins in the second set 530Y can be connected to each other via trace 552. Figure 5E (Not shown in the image). The pins in the second set 530Y can be connected to the second terminal of the sensing element. Symmetry can exist between the first set 530X and the second set 530Y. For example, the first set 530X and the second set 530Y can be rotationally symmetrical about axis 535.

[0110] Figure 5EThe diagram illustrates a magnetic field that can be generated by a current flowing through pins 531, 532, 533, and 534. The current can be configured to flow in the same direction through the pins in the first set 530X. The current can also be configured to flow in the same direction through the pins in the second set 530Y, opposite to the direction in the first set 530X. The magnetic field generated around pin 531 can have a specific strength and direction. The strength can be related to the amount of current flowing through pin 531. The direction can be related to the direction of current flow. Figure 5E In the example, the magnetic field generated by pin 531 coils around pin 531 in a clockwise direction. Similarly, the magnetic field generated by pin 534 coils around pin 534 in a clockwise direction.

[0111] The pins in the second set 530Y can generate a magnetic field in a different direction than the pins in the first set 530X. Figure 5E In the example, the magnetic field generated by pin 533 coils around pin 533 in a counterclockwise direction. Similarly, the magnetic field generated by pin 532 coils around pin 532 in a counterclockwise direction. The magnetic fields generated by the pins in the set can cancel each other out in certain regions. In the region around axis 535, the magnetic fields generated by all pins 531, 532, 533, and 534 can cancel each other out. Furthermore, the strength of the magnetic fields generated by the corresponding pins in the combination can be balanced because the pins in a combination can be connected in parallel to either the cathode or the anode, and therefore, the amount of current flowing through each pin can be substantially equal.

[0112] Figure 5A A detector package 500 having a first mounting fastener 561 and a second mounting fastener 562 is also shown. The first mounting fastener 561 and the second mounting fastener 562 may include screws. The first mounting fastener 561 and the second mounting fastener 562 can be used to mechanically secure the detector package 500 to another structure, while pins 531, 532, 533 and 534 can be used to electrically connect the detector package 500 to another component.

[0113] Figure 5B A top perspective view of the detector package 500 is shown. Figure 5C A top perspective view of the detector package 500 without the sensing element 320 placed on it is shown. Figure 5DA bottom perspective view of the detector package 500 is shown. The substrate 510 of the detector package 500 may have a top surface 511 and a bottom surface 515. In some embodiments, the bottom surface 515 may include a conductive layer. In some embodiments, the conductive material of trace 551 or trace 552 may extend through the substrate 510 and may be exposed to the bottom surface 515. Trace 551 or 552 may be fabricated to have a relatively large thickness to reduce impedance. In some embodiments, the substrate 510 may be integrally formed with trace 551 or 552. In some embodiments, the trace on the bottom surface 515 may be a mirror image of the trace on the top surface 511. The trace on the top surface 511 may be connected to the trace on the bottom surface 515.

[0114] Now for reference Figure 6 , Figure 6 An exemplary connection arrangement according to an embodiment of the present disclosure is shown. Figure 6 A detector package 500 is shown, having a sensing element 600 instead of a sensing element 320. The sensing element 600 includes a first pad 621 and a second pad 622. The sensing element 600 is connected to traces 551 and 552 via bonding wires. For example, the first pad 621 is connected to trace 551 via bonding wire 541, and the second pad 622 is connected to trace 552 via bonding wire 542. Traces 551 and 552 can be connected to pins (…). Figure 6 (Not shown in the image). For example, pins 531, 532, 533, and 534 can be inserted through holes in the detector package 500 and can be electrically connected to the corresponding traces 551 and 552. Pin head 336 (see...) Figure 4E The bottom surface of the trace 551 and 552 can be connected to the top surface of the corresponding trace 551 and 552. Figure 9A and Figure 9B A base 510 is shown having holes 591 and 592 formed therein, hole 591 being configured to receive a pin and hole 592 being configured to receive a mounting fastener. Figure 6 As shown, traces 551 and 552 can be separated from each other by a serpentine region 512. The serpentine region 512 can be a region without conductive material. The serpentine region 512 can include an insulator. The serpentine region 512 can be formed by space. The width of the serpentine region 512 can be set to be greater than or equal to a predetermined value.

[0115] Figure 7 Sensing element 600 is shown separately. Figure 8A The sensing element 600 is shown in such a way as Figure 7 The cross-sectional view at position AA shown. Figure 8B The sensing element 600 is shown in such a way as Figure 7 The cross-sectional view at position BB shown. Figure 8CThe sensing element 600 is shown in such a way as Figure 7 The cross-sectional view at position CC is shown.

[0116] like Figure 8A As shown, the sensing element 600 may include a conductive ring 620 surrounding the edge of the sensing element 600. The conductive ring 620 may include a first pad 621. The conductive ring 620 may be formed of a conductive material and may have a thickness increased relative to another surface cover of the sensing element 600. For example, the sensing element 600 may include a layer 630. The layer 630 may be formed of a conductive material such as aluminum. The layer 630 may have a relatively low density and low thickness so as not to interfere with incident secondary electrons falling on the sensing element 600. The conductive ring 620 may be formed of the same material as the layer 630. The layer 630 may be configured to collect the signal current generated in the sensing element 600 and transmit it to another component. The signal current generated in the sensing element 600 can be transmitted through the layer 630 to the conductive ring 620 and output from the sensing element 600 via the first pad 621.

[0117] Sensing element 600 may include a semiconductor diode. Sensing element 600 may be formed using multiple layers. Sensing element 600 may be configured to form a depletion region when a reverse bias is applied. Sensing element 600 may include a first region of highly doped semiconductor material. For example, sensing element 600 may include a P++ layer 640. Sensing element 600 may include an intrinsic region. For example, sensing element 600 may include an N layer 650. Sensing element 600 may include a second highly doped semiconductor material having a different conductivity than the first region. For example, sensing element 600 may include an N++ region 660. Sensing element 600 may include a conductive layer on its bottom side. For example, sensing element 600 may include a metal layer 670. Metal layer 670 may be formed of aluminum.

[0118] like Figure 8A As shown, the first pad 621 may include an area whose width increases relative to the rest of the conductive ring 620. Figure 8B As shown, the width of the conductive ring 620 can be uniform in other parts of the sensing element 600.

[0119] like Figure 8CAs shown, the sensing element 600 may include a second pad 622. The second pad 622 may include a bonding pad region 625, a via 626, and an insulator 627. The bonding pad region 625 may be formed of aluminum. The via 626 may be formed of a conductive material. The via 626 may be configured to electrically connect the bonding pad region 625 to a metal layer 670. The insulator 627 may be configured to electrically insulate the second pad 622 from layers 630, P++ region 640, N region 650, and N++ region 660.

[0120] In operation, the sensing element 600 can be exposed to incident charged particles. The incident charged particles can interact with depletion regions formed in the sensing element 600 when a bias voltage (e.g., reverse bias voltage) is applied, and can generate charge. The charge generated in response to the incident charged particles on the sensing element 600 can flow to the terminals of the sensing element 600 and can be output from the sensing element 600.

[0121] Figure 9A A top view of the substrate 510 of the detector package 500 is shown. The sensing element 600 can be placed on the top surface 511 of the substrate 510. The metal layer 670 of the sensing element 600 (on...) Figures 8A to 8C (As shown in the diagram) can be electrically connected to a trace formed on the top surface 511 of the substrate 510. For example, in some embodiments, the trace 551 can be formed to cover a region of the top surface 511 of the substrate 510, where the sensing element can be placed (see [reference]). Figure 14A ).

[0122] Figure 9B A bottom view of the substrate 510 of the detector package 500 is shown. The bottom surface 512 of the substrate 510 may be the side of the detector package 500 opposite to the location where the sensing element 600 is placed. Traces may be formed on the bottom surface 512 of the substrate 510. For example, as Figure 9B As shown, a first trace 553 and a second trace 554 may be provided on the bottom surface 512 of the substrate 510. Trace 553 may be connected to trace 552. Trace 553 may connect to a set of pins (e.g., pins 532 and 533). Trace 554 may be connected to trace 551. Trace 554 may connect to a set of pins (e.g., pins 531 and 534). The traces on the respective top and bottom surfaces of the substrate 510 may be connected by pins inserted through holes 591.

[0123] Now for reference Figure 10 , Figure 10 An exemplary connection arrangement according to an embodiment of this disclosure is shown. Similar to... Figure 6 , Figure 10The example shows a detector package 500 with a sensing element 600. However, compared to... Figure 6 The difference lies in Figure 10 In this process, the sensing element 600 can be connected to different traces in traces 551 and 552. Figure 10 A first pad 621 of a sensing element 600 is shown, which is connected to a trace 552 via a bonding line 541. Furthermore, a second pad 622 is connected to the trace 551 via a bonding line 542. Figure 10 The detector package 500 can be similar to Figure 6 The detector package, except that different pins are connected to the cathode and anode terminals. For example, in Figure 10 In this configuration, the pin connected to trace 551 can be connected to the anode, while the pin connected to trace 552 can be connected to the cathode.

[0124] Now for reference Figure 11 , Figure 11 An exemplary connection arrangement according to an embodiment of the present disclosure is shown. Figure 11 A detector package 500 is shown having a sensing element 320 connected to a trace 552 via bonding wires. The trace 551 can be connected to the sensing element 320 by direct contact with the bottom surface of the sensing element 320. The sensing element 320 can be connected to the trace 552 via two bonding wires (e.g., a first bonding wire 541 and a second bonding wire 542). Compared to connecting the corresponding terminals of the sensing element to the trace on the detector package with a single bonding wire, the amount of current flowing through each bonding wire can be reduced.

[0125] Figure 12 Sensing element 320 is shown separately. Figure 13A The sensing element 320 is shown in such a way as Figure 12 The cross-sectional view at position AA shown. Figure 13B The sensing element 320 is shown in such a way as Figure 12 The cross-sectional view at position BB shown.

[0126] like Figure 13A As shown, the sensing element 320 may include a conductive ring 324 surrounding the edge of the sensing element 320. The conductive ring 324 may include a first pad 321 and a second pad 322. The conductive ring 324 may be similar to the one referenced above. Figures 8A to 8C The conductive ring 620 is under discussion.

[0127] Sensing element 320 may include layer 325. Layer 325 may be formed of a conductive material such as aluminum. Layer 325 may have a relatively low density and low thickness so as not to interfere with incident secondary electrons falling on sensing element 320. Conducting ring 324 may be formed of the same material as layer 325. Layer 325 may be configured to collect signal current generated in sensing element 320 and transmit it to another component. The signal current generated in sensing element 320 may be transmitted through layer 325 to conducting ring 324 and output from sensing element 320 via first pad 321 or second pad 322.

[0128] Sensing element 320 may include a semiconductor diode, similar to sensing element 600. Sensing element 320 may differ from sensing element 600 because the via structure may be omitted. This can improve the ease of manufacturing sensing element 320. For example, the process of manufacturing sensing element 320 may include fewer steps than that of sensing element 600.

[0129] Sensing element 320 can be configured to form a depletion region when a reverse bias voltage is applied. Sensing element 320 may include a first region of highly doped semiconductor material. For example, such as... Figure 13A As shown, sensing element 320 may include a P++ layer 326. Sensing element 320 may include an intrinsic region. For example, sensing element 320 may include an N layer 327. Sensing element 320 may include a second highly doped semiconductor material having a different conductivity than the first region. For example, sensing element 320 may include an N++ region 328. Sensing element 320 may include a conductive layer on its bottom side. For example, sensing element 320 may include a metal layer 329. Metal layer 329 may be formed of aluminum.

[0130] like Figure 13A As shown, the first pad 321 may include an area whose width increases relative to the rest of the conductive ring 324. Figure 13B As shown, the width of the conductive ring 324 can be uniform in other parts of the sensing element 320. The second pad 322 can be formed similarly to the first pad 321.

[0131] Figure 14A A top view of the substrate 510 of the detector package 500 is shown. A sensing element (e.g., sensing element 320) can be placed on the top surface 511 of the substrate 510. A metal layer 329 of the sensing element 320 (e.g., Figures 13A-13B (As shown) can be electrically connected to traces formed on the top surface 511 of the substrate 510. For example, trace 551 can be formed on the area of ​​the top surface 511 of the substrate 510 where the sensing element 320 can be placed. Figure 14BA bottom view of the substrate 510 of the detector package 500 is shown. A first trace 553 and a second trace 554 can be disposed on the bottom surface 512 of the substrate 510. Trace 553 can be connected to trace 552. Trace 553 can be connected to a set of pins (e.g., pins 532 and 533). Trace 554 can be connected to trace 551. Trace 554 can be connected to a set of pins (e.g., pins 531 and 534). Traces on the respective top and bottom surfaces of the substrate 510 can be connected by pins inserted through a through-hole 591.

[0132] Now for reference Figure 15 , Figure 15 An exemplary detector package and connection arrangement according to embodiments of the present disclosure is shown. Figure 15 A detector package 700 is shown that may include a plurality of holes 791 for receiving pins. The detector package 700 may be configured to receive a plurality of pin groups. The detector package 700 may be configured to receive three or more pin groups, each group including two or more pins. The detector package 700 may include a sensing element 720 having a plurality of bonding pads. The sensing element 720 may include a first surface pad 721A, a second surface pad 721B, and a through-hole pad 722.

[0133] Similar to Figure 11 The detector is packaged in 500. Figure 15 The detector package 700 allows sensing elements to be connected to traces on the detector package via multiple bonding lines, thereby reducing the amount of current flowing in each bonding line. For example, a first bonding line 741 can connect a first surface pad 721A to trace 751 of the detector package 700. A second bonding line 742 can connect a through-hole pad 722 to trace 752. The through-hole pad 722 can be similar to... Figure 7 and Figure 8C The pad 622. In addition, the third bonding line 743 can connect the second surface pad 721B to the trace 751, which is located at a different position in the detector package 700 relative to the first bonding line 741.

[0134] The detector package 700 can be configured to accommodate pins with symmetry. For example, holes 791 are arranged in a 2×3 grid. Rotational symmetry may exist about an axis at the center of the 2×3 grid. Pins connected to trace 751 can be connected to the anode, and pins connected to trace 752 can be connected to the cathode, or vice versa. Rotating the arrangement of the pins by 180 degrees can produce pins connected to the anode and pins connected to the cathode in the same position.

[0135] The detector package 700 can be configured to have three pin groups. The combination of pins can correspond to the horizontal row of holes 791, such as... Figure 15As shown. For example, there can be a top pin group, a middle pin group, and a bottom pin group. The positioning of the pins connecting the anode and the pins connecting the cathode can alternate between the combinations.

[0136] The sensing element 720 can be connected to the detector package 700 via bonding wires or other connections. For example, in some embodiments, the sensing element 720 can be connected to traces on the detector package 700 through direct contact with a metal layer on the bottom surface of the sensing element 720. In some embodiments, the through-hole pad 742 may be omitted.

[0137] Now for reference Figure 16 , Figure 16 An exemplary detector package according to an embodiment of the present disclosure is shown. Figure 16 A detector package 800B is shown, including eight holes for receiving pins. The detector package 800B can be configured to receive multiple pin groups. The detector package 800B can be configured to receive four pin groups, each group comprising two pins. Figure 16 In the view, the pin groups can correspond to the horizontal rows of holes in the detector package 800B. Trace 851 can connect one pin in each group together. Trace 852 can connect another pin in each group together.

[0138] The detector package 800B can be symmetrical. For example... Figure 16 As shown, the detector package 800B can have rotational symmetry about an axis at the center of a 2×4 grid of holes. The positions of the pins connecting the anode and the pins connecting the cathode can be alternated in groups.

[0139] Detector packages can be symmetrical in various arrangements. A detector package can be mirror-symmetrical about the line dividing the upper and lower halves of the detector package. For example, Figure 15 The detector package 700 can be symmetrical by means of the reflection symmetry of the lines that divide the upper and lower halves of the detector package 700.

[0140] In some embodiments, a detector package may be provided as one of a plurality of detector packages in a detector system. Figure 17 A detector system 900 is shown. The detector system 900 may include multiple detection units 901, 902, 903, and 904. Each detection unit may correspond to a detector package 500. Therefore, four detector packages 500 can be arranged together to provide four detection units. For example, multiple detection regions (e.g., as described above) can be provided by arranging multiple detector packages together. Figure 3B The detectors for the detection sub-regions 246, 248 and 250 discussed.

[0141] These embodiments may be further described using the following terms:

[0142] A package for a charged particle detector, comprising:

[0143] The package includes two pin sets, each of which contains two pins.

[0144] Each pin in the pin set is configured to be connected to one of the two terminals of the diode of the electronic detector, and pins in different sets are configured to be connected to different terminals of the two terminals of the diode.

[0145] Furthermore, the pin set is arranged symmetrically such that the magnetic field generated when current passes through a pin in the pin set is reduced by the magnetic field generated by another pin in the set due to this symmetry.

[0146] 2. The encapsulation as described in Clause 1, wherein the symmetry is rotational symmetry about an axis at the center of the pin set.

[0147] 3. The packaging according to Clause 1 or Clause 2 further includes:

[0148] The bonding line is configured to connect the first terminal of the diode to the first set of pins in the pin set.

[0149] 4. The package according to Clause 3 further includes a second bonding line configured to connect a second terminal of the diode to a second set of pins.

[0150] 5. The package according to any one of clauses 1 to 3, wherein the diode includes a second terminal configured to be connected to a second set of pins via traces on the package body.

[0151] 6. The package according to any one of Clauses 1 to 5, wherein each pin set in the pin set comprises three pins.

[0152] 7. The package according to any one of Clauses 1 to 6, wherein each pin set in the pin set comprises more than three pins.

[0153] 8. The package according to any one of clauses 1 to 7, wherein the pins are arranged in a grid.

[0154] 9. The package according to any one of Clauses 1 to 8, wherein the pin set includes a first pin group and a second pin group, wherein the first pin group is arranged in a first row aligned with the terminals of the diode, and the second pin group is arranged in a second row aligned with the different terminals of the diode.

[0155] 10. A detector package, comprising:

[0156] The body has multiple pores formed therein;

[0157] Sensing elements; and

[0158] Multiple pins are configured to be inserted into multiple holes.

[0159] The pins are arranged in multiple combinations, with each combination aligned with a corresponding terminal of the sensing element.

[0160] Each assembly includes a pin connected to a first terminal of the sensing element and a pin connected to a second terminal of the sensing element, and

[0161] The pins in one combination are arranged alternately with respect to the pins in another combination.

[0162] 11. The detector package according to Clause 10, wherein

[0163] Multiple combinations include the first combination and the second combination.

[0164] The first assembly includes a first pin connected to a first terminal and a second pin connected to a second terminal, the second pin being arranged closer to the sensing element than the first pin, and

[0165] The second assembly includes a third pin connected to the second terminal and a fourth pin connected to the first terminal, the fourth pin being arranged closer to the sensing element than the third pin.

[0166] 12. The detector package according to Clause 10 or Clause 11, wherein the sensing element includes a semiconductor diode configured to generate an electrical signal in response to the incidence of a secondary charged particle.

[0167] 13. The detector package according to any one of clauses 10 to 12, wherein

[0168] The first terminal includes a first pad, and the second terminal includes a second pad.

[0169] 14. The detector package as described in Clause 13, wherein the second terminal includes a via.

[0170] 15. The detector package according to any one of clauses 10 to 14, wherein

[0171] The sensing element includes a metal layer on the bottom side of the sensing element, and

[0172] The second terminal includes a metal layer.

[0173] 16. The detector package according to any one of clauses 10 to 15 further comprises:

[0174] The first trace on the body, configured to connect two pins in different combinations, and

[0175] A second trace on the body, which is configured to connect two pins in different combinations.

[0176] 17. The detector package as described in Clause 16, wherein the first trace and the second trace are separated by a serpentine region.

[0177] 18. The detector package according to any one of clauses 10 to 17, wherein a plurality of pins are arranged in a first set and a second set, wherein the pins in the first set are connected to a first terminal, and the pins in the second set are connected to a second terminal, and

[0178] The first set and the second set are symmetrical.

[0179] 19. A detector configured to have a plurality of detector sub-regions, the detector including a detector package as described in claim 10, wherein a plurality of detector packages are provided in the detector, each detector package corresponding to a corresponding detector sub-region in the detector sub-regions.

[0180] 20. A detector package, comprising:

[0181] First sales collection;

[0182] The second sales collection; and

[0183] Sensing element,

[0184] The first pin assembly is electrically connected to the first terminal of the sensing element.

[0185] The second pin is electrically connected to the second terminal of the sensing element, and

[0186] The first and second pin sets are arranged to be symmetrical about an axis at the center of the pin sets, such that the magnetic field generated by one pin reduces the magnetic field generated by the other pin in the region surrounding that axis.

[0187] 21. The detector package according to Clause 20, wherein

[0188] The first set of pins includes two pins extending through the base, and

[0189] The second pin set includes two pins that extend through the base.

[0190] 22. A detector package, comprising:

[0191] The body includes a plurality of protruding pins extending in parallel; and

[0192] The sensing element is configured to generate a current in response to the incident radiation to be detected, the current flowing between a first terminal and a second terminal.

[0193] Multiple pins are arranged in multiple combinations, each pin in one combination being connected to different terminals in the first and second terminals, such that current can flow in opposite directions between the pins in the combination.

[0194] The multiple combinations include a first combination and a second combination, in which pins in the first combination are arranged to be adjacent in a first region, and pins in the second combination are arranged to be adjacent in a second region, such that the magnetic field generated by the current flowing through the multiple pins is reduced.

[0195] 23. The detector package according to Clause 10, wherein

[0196] The plurality of pins includes a first set and a second set, wherein pins in the first set are connected to a first terminal and pins in the second set are connected to a second terminal.

[0197] It should be understood that the embodiments of this disclosure are not limited to the exact constructions described above and illustrated in the accompanying drawings, and various modifications and changes can be made without departing from the scope of this disclosure.

Claims

1. A package for a charged particle detector, comprising: The package includes two pin sets, each of which includes two pins. Each pin in the pin set is configured to be connected to one of the two terminals of the diode of the charged particle detector, and pins in different sets are configured to be connected to different terminals of the two terminals of the diode. Furthermore, the pin set is arranged symmetrically such that the magnetic field generated when current passes through a pin in the pin set is reduced by the magnetic field generated by another pin in the set due to the symmetry.

2. The package according to claim 1, wherein the symmetry is rotational symmetry about an axis at the center of the pin set.

3. The packaging according to claim 1 further includes: A bonding line is configured to connect the first terminal of the diode to a first set of pins in the pin set.

4. The package of claim 3 further includes a second bonding line configured to connect a second terminal of the diode to a second set of pins.

5. The package of claim 4, wherein the diode includes a second terminal configured to be connected to the second set of pins via traces on the package body.

6. The package according to claim 1, wherein each pin set in the pin set comprises three pins.

7. The package of claim 1, wherein each pin set in the pin set comprises more than three pins.

8. The package of claim 1, wherein the pins are arranged in a grid.

9. The package of claim 1, wherein the pin set comprises a first pin group and a second pin group, wherein the first pin group is arranged in a first row aligned with the terminals of the diode, and the second pin group is arranged in a second row aligned with different terminals of the diode.

10. A detector package, comprising: The body has a plurality of holes formed therein; Sensing element; as well as Multiple pins are configured to be inserted into the multiple holes. The pins are arranged in multiple combinations, each combination being aligned with a corresponding terminal of the sensing element. Each assembly includes a pin connected to a first terminal of the sensing element and a pin connected to a second terminal of the sensing element, and The pins in one combination are arranged alternately with respect to the pins in another combination.

11. The detector package according to claim 10, wherein... The plurality of combinations includes a first combination and a second combination. The first assembly includes a first pin connected to the first terminal and a second pin connected to the second terminal, the second pin being arranged closer to the sensing element than the first pin. The second assembly includes a third pin connected to the second terminal and a fourth pin connected to the first terminal, the fourth pin being arranged closer to the sensing element than the third pin.

12. The detector package of claim 10, wherein the sensing element comprises a semiconductor diode configured to generate an electrical signal in response to the incidence of a secondary charged particle.

13. The detector package according to claim 10, wherein... The first terminal includes a first pad, and the second terminal includes a second pad.

14. The detector package of claim 13, wherein the second terminal includes a via.

15. The detector package of claim 10, wherein... The sensing element includes a metal layer on the bottom side of the sensing element, and The second terminal includes the metal layer.

16. The detector package according to claim 10, further comprising: The first trace on the body, the first trace being configured to connect two pins in different combinations, and The second trace on the body is configured to connect two pins in different combinations.

17. The detector package of claim 16, wherein the first trace and the second trace are separated by a serpentine region.

18. The detector package of claim 10, wherein the plurality of pins are arranged in a first set and a second set, wherein the pins in the first set are connected to the first terminal, and the pins in the second set are connected to the second terminal, and The first set and the second set are symmetrical.

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