Display device

Abstract

Display apparatus. Disclosed herein is a light emitting device that can improve process stability during a process of setting the light emitting device and a display apparatus including the same. A light emitting device includes an n-type semiconductor layer and a p-type semiconductor layer, and a structure is provided so as to minimize electrical shorting between electrodes even if the light emitting device is misaligned. The structure can have at least one side surface in an inverted taper shape and can be provided between the electrodes to minimize shorting between the electrodes during a process of connecting the electrodes.

Description

[0001] This application is a divisional application of the invention patent application filed on July 12, 2018, with application number 201810762162.7 and entitled "Light Emitting Device and Display Device Using the Light Emitting Device". Technical Field

[0002] This disclosure relates to light-emitting devices and display devices using the light-emitting device. More specifically, this disclosure relates to a light-emitting device that improves electrode connection efficiency and wiring connection stability when electrically connecting the light-emitting device to wiring electrodes, thereby increasing the reliability of the device, and a display device using the light-emitting device. Background Technology

[0003] In addition to display devices for televisions or monitors, display devices are also widely used as display screens for notebook computers, tablet computers, smartphones, portable display devices, and portable information devices.

[0004] Display devices can be classified into reflective display devices and light-emitting display devices. Reflective display devices display information when natural light or light emitted from an external lighting device is reflected from them. Light-emitting display devices include light-emitting elements or light sources and use the light emitted from these elements or sources to display information.

[0005] The light-emitting device can be a light-emitting device that can emit light of various wavelengths, or a light-emitting device that emits white light or blue light, and a color filter that can change the wavelength of the emitted light.

[0006] As described above, in order to display an image on a display device, multiple light-emitting devices are disposed on the substrate of the display device. To control the individual emission of light by each light-emitting device, a driving element for supplying driving signals or driving current is disposed on the substrate along with the light-emitting devices. The multiple light-emitting devices disposed on the substrate are analyzed according to the arrangement of the information to be displayed, so that the information is displayed on the substrate.

[0007] In other words, multiple pixels are arranged in the display device, and each pixel uses a thin-film transistor as a switching element (driving element). Each pixel is connected to the thin-film transistor and driven so that the display device displays an image when the pixel is operated individually.

[0008] Representative display devices using thin-film transistors include liquid crystal displays (LCDs) and organic light-emitting diode (OLEDs). LCDs are not self-emissive, therefore requiring a backlight unit located below (behind) the LCD to emit light. This backlight unit increases the thickness of the LCD. Furthermore, it's impossible to achieve display devices with various shapes, such as flexible or circular displays, using this type of backlight unit. Additionally, brightness and response time may decrease.

[0009] On the other hand, display devices with self-emissive elements can be manufactured to be thinner than those with light sources, and this is advantageous for flexible and foldable display devices.

[0010] Display devices with self-emissive elements can be categorized into organic light-emitting display devices (OLEDs) that use organic materials as the emitting layer and microLED display devices that use microLED elements as the light-emitting devices. Self-emissive display devices, such as organic light-emitting display devices and microLED display devices, do not require an additional light source and can therefore be used in thin display devices of various shapes.

[0011] However, even though organic light-emitting display devices using organic materials do not require an additional light source, there is a problem of defective pixels that may appear due to moisture and oxygen. Therefore, various technological ideas are still needed to minimize the penetration of oxygen and moisture.

[0012] Regarding the aforementioned issues, recent research and development have focused on display devices using micro-sized light-emitting diodes (LEDs) as light-emitting devices. These displays are attracting attention as next-generation display devices due to their high image quality and high reliability.

[0013] LEDs are semiconductor light-emitting devices that utilize the property of emitting light when an electric current flows through them. These LEDs are widely used in lighting fixtures, televisions, and various display devices. An LED consists of an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between them. When current flows, electrons in the n-type semiconductor layer recombine with holes in the p-type semiconductor layer in the active layer to emit light.

[0014] LED components incorporate compound semiconductors such as GaN, and due to the nature of inorganic materials, high current can be injected, resulting in high brightness. Furthermore, LED components exhibit high reliability because they are less affected by environmental factors such as heat, moisture, and oxygen.

[0015] In addition, LED elements have an internal quantum efficiency of approximately 90% (higher than that of organic light-emitting display devices). Therefore, they have the advantage of being able to display high-brightness images while consuming less power.

[0016] Furthermore, unlike organic light-emitting display devices, the effects of oxygen and moisture are negligible when using inorganic materials. Therefore, there is no need for additional encapsulation layers or substrates to minimize the penetration of moisture and oxygen, thus reducing the ineffective areas of the display device (the edge areas where encapsulation layers or substrates are provided).

[0017] After light-emitting devices, such as LEDs, are formed on a separate substrate, it may be necessary to transfer them to the display device process. To provide a display device with the advantages described above, techniques are needed to correctly position the light-emitting devices on the display device, as well as techniques to minimize errors that may occur during the process of setting the light-emitting devices. Much research activity exists in this area. Summary of the Invention

[0018] As described above, there are several technical requirements for realizing a light-emitting display device that uses LED elements as light-emitting devices for unit pixels. Initially, LED elements are crystallized on a semiconductor wafer substrate such as sapphire or silicon (Si), and then the crystallized LED elements are transferred to a substrate on which driving elements are provided. In doing so, a complex transfer process is required to position the LED elements at positions corresponding to each pixel.

[0019] Although LED components can be formed using inorganic materials, they need to be crystallized. For inorganic materials such as GaN to crystallize, they must be crystallized on a substrate capable of inducing crystallization. The substrate capable of efficiently inducing the crystallization of inorganic materials is a semiconductor substrate. As mentioned above, the inorganic material must be crystallized on a semiconductor substrate.

[0020] The process of crystallizing LED components is also known as epitaxy, epitaxial growth, or epitaxial technology. Epitaxy refers to growing a film on the surface of a crystal with a specific orientation relationship. To form the device structure of an LED component, GaN compound semiconductors must be stacked on a substrate in the form of pn junction diodes. At this time, each layer grows by inheriting the crystallinity of the layer below it.

[0021] Defects within a crystal act as non-radiative centers during electron-hole recombination. Therefore, in photon-using LED devices, the crystallinity of the crystals forming each layer has a significant impact on device efficiency.

[0022] Currently, sapphire substrates are commonly used as substrates. Recently, research has been conducted on GaN-based substrates.

[0023] The semiconductor substrate required to crystallize inorganic materials such as GaN, which constitute LED elements, on a semiconductor substrate is expensive. Therefore, if a large number of LEDs are used as light-emitting pixels in display devices, rather than as light sources for simple lighting devices or backlight units, there is a problem of increased production costs.

[0024] Furthermore, as mentioned above, the LED elements formed on the semiconductor substrate need to be transferred to the substrate of the display device. In doing so, it is difficult to separate the LED elements from the semiconductor substrate. Moreover, correctly placing the separated LED elements into the designed location is even more challenging.

[0025] When transferring LED elements formed on a semiconductor substrate to a substrate used to realize a display device, various transfer methods can be used, including methods using a substrate based on polymer materials (e.g., PDMS (polydimethylsiloxane)), methods using electromagnetic or electrostatic forces, or methods of picking up and moving them one by one.

[0026] This transfer process is related to the productivity of the manufacturing process of the display device, so for mass production, transferring LED components one by one would be inefficient.

[0027] Therefore, precise transfer processes or techniques are required to separate multiple LED elements from the semiconductor substrate using a transfer substrate made of polymer material, in order to position these LED elements onto the substrate of the display device, particularly onto the pad electrodes connected to the driving elements and the power electrodes disposed in the thin-film transistor.

[0028] Defects may occur during the aforementioned transfer process or subsequent processes, such as LED elements flipping due to conditions like vibration or heat while being moved or transferred. Finding and restoring these defects presents numerous difficulties.

[0029] The defects will be described in more detail below, with reference to a general transfer process as an example.

[0030] First, an LED element is formed on a semiconductor substrate, and electrodes are formed thereon to complete a single LED element. Then, the semiconductor substrate is brought into contact with a PDMS substrate (hereinafter referred to as a transfer substrate). During this process, the pixel pitch between pixels on the actual display substrate must be taken into account when transferring the LED element from the semiconductor substrate to the transfer substrate. Therefore, when the transfer substrate has protruding features, etc., for receiving the LED element, these features, etc., must be set in consideration of the pixel pitch.

[0031] Subsequently, a laser is irradiated onto the LED element through the back surface of the semiconductor substrate, thereby separating the LED element from the semiconductor substrate. During the laser irradiation process, as the LED element separates from the semiconductor substrate, the GaN material of the semiconductor substrate may physically expand rapidly due to the high energy concentration of the laser, potentially causing an impact. As a result, when the LED element is transferred to the transfer substrate, it may be pushed, potentially moving it to an undesirable position (this is called a primary transfer).

[0032] Subsequently, the LED elements transferred to the transfer substrate are transferred to the substrate of the display device. A passivation layer for insulating / protecting the thin-film transistors is formed on the substrate of the display device, and then an adhesive layer is formed on the passivation layer.

[0033] When the transfer substrate is brought into contact with the substrate of the display device to receive pressure, the LED elements transferred on the transfer substrate are transferred to the substrate of the display device through the adhesive layer on the passivation layer.

[0034] If the adhesive force between the transfer substrate and the LED element is less than the adhesive force between the substrate of the display device and the LED element, the LED element on the transfer substrate can be transferred to the substrate of the display device (this is called secondary transfer).

[0035] The size of the semiconductor substrate is substantially different from (typically smaller than) the size of the substrate of the display device. Due to this difference in area and size, the aforementioned primary and secondary transfer processes are repeated by dividing the substrate of the display device into sub-regions so that the LED elements can be transferred to the display device.

[0036] During the repeated transfer process, LED components may be moved to undesirable locations. Various errors may occur depending on the number of transfer cycles or variations in the transfer process itself.

[0037] The LED elements formed on the semiconductor substrate can be red, blue, or green LED elements, or they can be white LED elements, depending on their type. In the method of using LED elements that emit light of different wavelengths to realize pixels of a display device, the number of the above-mentioned primary and secondary transfer processes can be further increased.

[0038] As described above, the LED element may be flipped or rotated during the primary and secondary transfer processes. This increases the number of defective pixels in the display device and increases production costs. In view of the above, the inventors of this application have designed an LED element as a light-emitting device that can be set more stably, and a display device using the LED element.

[0039] The purpose of this disclosure is to provide a light-emitting device that minimizes the defect rate of the display device by electrically connecting the light-emitting device even if the light-emitting device is misaligned during the process of transferring and setting the light-emitting device.

[0040] It should be noted that the purpose of this disclosure is not limited to the above-described purposes, and other purposes of this disclosure will be apparent to those skilled in the art from the following description.

[0041] According to one aspect of this disclosure, a stablely disposed light-emitting device and a display device including the light-emitting device are provided. The light-emitting device may include an n-type semiconductor layer and a p-type semiconductor layer. An n-type electrode is disposed on the n-type semiconductor layer, and a p-type electrode is disposed on the p-type semiconductor layer. A structure may be disposed between the n-type electrode and the p-type electrode. This structure may have at least one inverted conical side surface adjacent to either the p-type electrode or the n-type electrode.

[0042] Preferably, the structure overlaps with an n-type electrode and / or a p-type electrode.

[0043] Preferably, the side surface of the structure that contacts the n-type electrode or p-type electrode has an inverted conical shape.

[0044] Preferably, the p-type electrode and the n-type electrode are on the same plane.

[0045] Preferably, the structure is made of an insulating material.

[0046] According to another aspect of this disclosure, a display device is provided, the display device comprising: a light-emitting device disposed on a substrate and having an n-type electrode and a p-type electrode; a pixel electrode disposed on the substrate and connected to the p-type electrode; a common electrode disposed on the substrate and connected to the n-type electrode; and a structure disposed between the n-type electrode and the p-type electrode, wherein at least one side of the structure adjacent to the p-type electrode or the n-type electrode has an inverted conical shape.

[0047] Preferably, one side surface of the structure that contacts the n-type electrode or p-type electrode is inverted conical.

[0048] Preferably, the structure is configured such that it overlaps with a p-type electrode and / or an n-type electrode.

[0049] Preferably, the pixel electrode or common electrode extends above the structure.

[0050] Preferably, the pixel electrode connected to the p-type electrode is disconnected from the pixel electrode extending above the structure, and the common electrode connected to the n-type electrode is disconnected from the common electrode extending above the structure.

[0051] Preferably, the substrate includes at least one driving element, and the pixel electrode is connected to the driving element.

[0052] Preferably, one side surface of the structure makes the p-type electrode or n-type electrode open-circuited.

[0053] In this way, an inverted conical structure is provided between the n-type electrode and the p-type electrode to minimize defects caused by electrical connection of the two electrodes during the process of connecting the p-type electrode and the n-type electrode to the pixel electrode or common electrode. As a result, even if the light-emitting device is not aligned during its setting process, the defect rate of the display device can be minimized by minimizing defective electrode connections.

[0054] According to an exemplary embodiment of this disclosure, a light-emitting device with a structure that improves the processing stability of the light-emitting device is employed, thereby reducing defects in the display device while improving productivity. Furthermore, the ease of processing is improved by employing this light-emitting device.

[0055] It should be noted that the effects of this disclosure are not limited to those described above, and other effects of this disclosure will be apparent to those skilled in the art from the following description.

[0056] The description of the invention does not specify the essential features of the appended claims, therefore the scope of the claims is not limited by it. Attached Figure Description

[0057] Figure 1 This is a schematic plan view of a light-emitting device according to an exemplary embodiment of the present disclosure;

[0058] Figure 2 It shows the basis Figure 1 A circuit diagram illustrating the configuration of unit pixels in an exemplary embodiment;

[0059] Figure 3 This is a cross-sectional view showing the arrangement of the light-emitting device and the connection of the electrodes according to an exemplary embodiment of the present disclosure;

[0060] Figure 4A and Figure 4B This is a plan view illustrating a light-emitting device according to an exemplary embodiment of the present disclosure;

[0061] Figure 5A and Figure 5B This is a diagram illustrating the connection of the electrodes of a light-emitting device according to an exemplary embodiment of the present disclosure; and

[0062] Figures 6A to 6D This is a cross-sectional view showing the electrode connections of a light-emitting device according to various exemplary embodiments of the present disclosure. Detailed Implementation

[0063] The advantages and features of this disclosure, and its implementation methods, will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but can be implemented in various different ways. Exemplary embodiments are provided to make this disclosure thorough and to fully convey the scope of this disclosure to those skilled in the art. It should be noted that the scope of this disclosure is defined only by the claims.

[0064] The figures, dimensions, scales, angles, and quantities of elements given in the accompanying drawings are illustrative and not limiting. Similar reference numerals refer to similar elements throughout the specification. Furthermore, descriptions of well-known art may be omitted in describing this disclosure to avoid unnecessarily obscuring its intent. It should be noted that, unless specifically stated otherwise, the terms "comprising," "having," "including," etc., used in the specification and claims should not be construed as limiting to the means listed below. Where an indefinite or definite article is used with a singular noun, this includes the plural noun unless specifically stated otherwise.

[0065] When describing a component, even if not explicitly stated, it is interpreted as including errors.

[0066] When describing positional relationships, such as "component A on component B", "component A above component B", "component A below component B", and "component A next to component B", another component C may be positioned between components A and B unless the terms "directly" or "immediately" are explicitly used.

[0067] When describing temporal relationships, unless otherwise specified, terms such as “after,” “following,” “next to,” and “before” are not limited to “immediately after,” “following,” “following,” “before,” etc.

[0068] When describing signal flow, such as "signal is transmitted from node A to node B", unless the terms "directly" or "immediately" are explicitly used, the signal may be transmitted from node A to node B via another node.

[0069] The terms first, second, third, etc., used in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe order or chronological sequence. These terms are used only to distinguish one element from another. Therefore, as used herein, within the scope of the technical concept of this disclosure, a first element may be a second element.

[0070] Features of the various exemplary embodiments of this disclosure may be combined in part or in whole. As will be clearly understood by those skilled in the art, various technical interactions and operations are possible. The various exemplary embodiments may be practiced individually or in combination.

[0071] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0072] Figure 1 This is a plan view of a light-emitting display device according to an exemplary embodiment of the present disclosure. Figure 2 It shows the basis Figure 1 A circuit diagram illustrating the configuration of unit pixels in an exemplary embodiment is shown. (Refer to...) Figure 1 and Figure 2 According to an exemplary embodiment of the present disclosure, the light-emitting display device 100 includes a substrate 110, on which a plurality of unit pixels UP are defined an effective area AA and an ineffective area IA.

[0073] Each unit pixel UP may include multiple sub-pixels SP1, SP2, and SP3 on the front side 110a of the substrate 110. Although sub-pixels SP1, SP2, and SP3 may typically emit red, blue, and green light respectively, this is not a limitation. For example, a sub-pixel may include a sub-pixel that emits white light.

[0074] The substrate 110 can be a thin-film transistor array substrate made of glass or plastic material. It can be formed by attaching two or more substrates together or by stacking two or more layers. The inactive region IA can be defined as the region on the substrate 110 other than the active region AA, which can have a relatively very small width and can be defined as a border region.

[0075] Multiple unit pixels UP are disposed within an effective area AA. The unit pixels UP are arranged within the effective area AA such that they have a predetermined first reference pixel spacing along the x-axis and a predetermined second reference pixel spacing along the y-axis. The first reference pixel spacing can be defined as the distance between the centers of adjacent unit pixels UP. Similar to the first reference pixel spacing, the second reference pixel spacing can be defined as the distance between the centers of adjacent unit pixels UP in the reference direction.

[0076] Similar to the first and second reference pixel spacing, the distance between sub-pixels SP1, SP2 and SP3 of each unit pixel UP can also be defined as the first reference sub-pixel spacing and the second reference sub-pixel spacing.

[0077] In the light-emitting display device 100 that includes LED element 150 as an LED element, the width of the invalid region IA can be smaller than the aforementioned pixel pitch or sub-pixel pitch. When a multi-screen display device is implemented using the light-emitting display device 100, since the width of the invalid region IA is smaller than the pixel pitch or sub-pixel pitch, a multi-screen display device with essentially no border area can be implemented.

[0078] To achieve this multi-screen display device with no or substantially no border area, the first reference pixel pitch, the second reference pixel pitch, the first reference sub-pixel pitch, and the second reference sub-pixel pitch can be kept constant within the effective area of ​​the light-emitting display device 100. Alternatively, by dividing the effective area AA into multiple sub-regions such that different sub-regions have different pitches, and by making the pixel pitch of the sub-regions adjacent to the ineffective area IA greater than the pixel pitch of other sub-regions, the size of the border area can be made smaller than the pixel pitch.

[0079] In a light-emitting display device 100 with different pixel pitches, image distortion may occur. To overcome this, image processing is performed such that image data is sampled considering the pixel pitch and comparison with adjacent areas. By doing so, the border area can be reduced while minimizing image distortion.

[0080] However, when reducing the size of the invalid region IA, the area for the pads used to connect to the circuitry that supplies power to the unit pixel UP with LED element 150 and sends / receives data signals to / from the unit pixel UP, as well as the area for the driver IC, needs to be minimized.

[0081] Reference Figure 2 The configuration and circuit structure of sub-pixels SP1, SP2, and SP3 of each unit pixel UP of the light-emitting display device 100 are described. Pixel driving lines are disposed on the front side 110a of the substrate 110 and supply necessary signals to each of the plurality of sub-pixels SP1, SP2, and SP3. According to an exemplary embodiment of this disclosure, the pixel driving lines include multiple gate lines GL, multiple data lines DL, multiple driving power lines DPL, and multiple common power lines CPL.

[0082] Multiple gate lines GL are disposed on the front side 110a of the substrate 110 and are spaced apart from each other in the second horizontal axis direction Y of the substrate 110 while extending in the first horizontal axis direction X of the substrate 110.

[0083] Multiple data lines DL are disposed on the front side 110a of the substrate 110, such that they intersect with the gate line GL and are spaced apart from each other in the first horizontal axis direction X of the substrate 110 while extending in the second horizontal axis direction Y of the substrate 110.

[0084] The driving power lines DPL are disposed on the substrate 110, parallel to the data lines DL, and can be formed together with the data lines DL. Each driving power line DPL supplies pixel driving power from an external source to the adjacent sub-pixel SP.

[0085] A common power line CPL is disposed on the substrate 110, parallel to the gate line GL, and can be formed together with the gate line GL. Each common power line CPL supplies a common power source from an external source to the adjacent sub-pixels SP1, SP2, and SP3.

[0086] Each of the multiple sub-pixels SP1, SP2, and SP3 is set within a sub-pixel region defined by the respective gate line GL and data line DL. Each of the multiple sub-pixels SP1, SP2, and SP3 can be defined as the smallest unit region for actual emitted light.

[0087] At least three adjacent sub-pixels SP1, SP2, and SP3 can form a single unit pixel UP for representing a color. For example, a single unit pixel UP may include a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3 that are adjacent to each other along a first horizontal axis direction X, and may also include a white sub-pixel to improve brightness.

[0088] Optionally, each of the multiple drive power lines DPL can be set in a separate unit pixel UP. Then, at least three sub-pixels SP1, SP2, and SP3 of each unit pixel UP share a single drive power line DPL. As a result, the number of drive power lines used to drive sub-pixels SP1, SP2, and SP3 can be reduced, allowing the aperture ratio of each unit pixel UP to increase due to the reduced number of drive power lines, or the size of each unit pixel UP to decrease.

[0089] Each of a plurality of sub-pixels SP1, SP2 and SP3 according to an exemplary embodiment of the present disclosure includes pixel circuitry PC and LED element 150.

[0090] Pixel circuit PC is disposed in the circuit region defined in each sub-pixel SP and connected to the adjacent gating line GL, data line DL, and drive power line DPL. Pixel circuit PC controls the current flowing through LED element 150 in response to scan pulses from gating line GL, based on pixel drive power supplied from drive power line DPL and according to data signals from data line DL. According to an exemplary embodiment of this disclosure, pixel circuit PC includes a switching thin-film transistor T1, a driving thin-film transistor T2, and a capacitor Cst.

[0091] The switching thin-film transistor T1 includes a gate connected to the gate line GL via node N1, a first electrode connected to the data line DL, and a second electrode connected to the gate GE of the driving thin-film transistor T2. Depending on the current direction, the first and second electrodes of the switching thin-film transistor T1 can be the source and drain, or vice versa. The switching thin-film transistor T1 is turned on / off in response to a scan pulse supplied to the gate line GL to supply the data signal supplied to the data line DL to the driving thin-film transistor T2.

[0092] The driving thin-film transistor T2 is turned on by the voltage supplied from the switching thin-film transistor T1 and / or the voltage of the capacitor Cst to control the amount of current flowing from the driving power line DPL to the LED element 150. For this purpose, the driving thin-film transistor T2 according to an exemplary embodiment of the present disclosure includes a gate GE connected to the second electrode of the switching thin-film transistor T1, a drain connected to the driving power line DPL, and a source connected to the LED element 150. The driving thin-film transistor T2 controls the data current flowing from the driving power line DPL to the LED element 150 based on the data signal supplied from the switching thin-film transistor T1 to control the emission of the LED element 150.

[0093] A capacitor Cst is disposed in the region where the gate GE and source of the driving thin film transistor T2 overlap, and stores the voltage corresponding to the data signal supplied to the gate of the driving thin film transistor T2, so as to turn on the driving thin film transistor T2 using the stored voltage.

[0094] Optionally, the pixel circuit PC may further include at least one compensating thin-film transistor for compensating for changes in the threshold voltage of the driving thin-film transistor T2, and may also include at least one auxiliary capacitor. The pixel circuit PC may also receive a compensating power supply, such as an initialization voltage, depending on the number of thin-film transistors and auxiliary capacitors. Therefore, the pixel circuit PC according to an exemplary embodiment of this disclosure is similar to a sub-pixel of an organic light-emitting display device driving the LED element 150 via a current-driven method, and thus the pixel circuit PC is applicable to pixel circuits of organic light-emitting display devices known in the art.

[0095] LED element 150 is disposed in each of a plurality of sub-pixels SP1, SP2, and SP3. LED element 150 is electrically connected to the pixel circuit PC and common power line CPL of the sub-pixel SP such that when current flows through LED element 150 from the pixel circuit PC (i.e., driving thin-film transistor T2) to the common power line CPL, LED element 150 emits light. According to an exemplary embodiment of this disclosure, LED element 150 may be an optical element or a light-emitting diode chip emitting one of red, green, blue, and white light. The light-emitting diode chip may have a scale from 1 micrometer to 100 micrometers. The size of the chip may be smaller than the size of the remaining emitting area in the sub-pixel region excluding the circuit area occupied by the pixel circuit PC.

[0096] Figure 3 This is a cross-sectional view illustrating the arrangement of the light-emitting device and the connection of the electrodes according to an exemplary embodiment of the present disclosure. (Refer to...) Figure 3 Combination Figure 1 and Figure 2 Describe it.

[0097] Each of the sub-pixels SP1, SP2 and SP3 of the display device according to an exemplary embodiment of the present disclosure includes a passivation layer 113, an LED element 150, planarization layers 115-1 and 115-2, a pixel electrode PE and a common electrode CE.

[0098] Despite Figure 3 The substrate 110 is shown as relatively thin, but it may be much thicker than the total thickness of the layers formed on it. The substrate 110 may consist of multiple layers, or it may be formed by attaching multiple substrates together.

[0099] The pixel circuit PC includes a switching thin-film transistor T1, a driving thin-film transistor T2, and a capacitor C. The pixel circuit PC is the same as described above; therefore, redundant descriptions will be omitted. The structure of the driving thin-film transistor T2 will be described below as an example.

[0100] The driving thin-film transistor T2 includes a gate GE, a semiconductor layer SCL, a source SE, and a drain DE.

[0101] The gate GE is disposed on the substrate 110 together with the gate line GL. The gate GE is covered by a gate insulating layer 112. The gate insulating layer 112 may be composed of a single layer or multiple layers made of inorganic materials (e.g., silicon oxide (SiOx) and silicon nitride (SiNx)).

[0102] The semiconductor layer SCL is disposed on the gate insulating layer 112 in a predetermined pattern (or in the form of islands) such that it overlaps with the gate GE. The semiconductor layer SCL may be made of a semiconductor material composed of (but not limited to) amorphous silicon, polycrystalline silicon, oxide and organic materials.

[0103] The source SE is configured to overlap one side of the semiconductor layer SCL. The source SE is configured together with the data line DL and the drive power line DPL.

[0104] The drain DE is configured to overlap with the other side of the semiconductor layer SCL and be spaced apart from the source SE. The drain DE is configured together with the source SE and branches or protrudes from the adjacent drive power line DPL.

[0105] Furthermore, the switching thin-film transistor T1 of the pixel circuit PC is configured with the same structure as the driving thin-film transistor T2. In this case, the gate of the switching thin-film transistor T1 branches off from or protrudes from the gate line GL. The first electrode of the switching thin-film transistor T1 branches off from or protrudes from the data line DL. The second electrode of the switching thin-film transistor T1 is connected to the gate GE of the driving thin-film transistor T2 through a via formed in the gate insulating layer 112.

[0106] A passivation layer 113 is formed over the entire surface of the substrate 110, thereby covering the sub-pixels SP (i.e., pixel circuits PC). The passivation layer 113 protects the pixel circuits PC and provides a flat surface. The passivation layer 113 may be made of an organic material such as benzocyclobutene or photo-acryl. Preferably, for ease of processing, the passivation layer 113 may be made of a photo-acryl material.

[0107] An LED element 150 according to an exemplary embodiment of the present disclosure can be disposed on a passivation layer 113 using an adhesive member 114. Alternatively, the LED element 150 can be disposed in a recess formed in the passivation layer 113. When the LED element 150 is disposed in a recess, the inclined surface of the recess in the passivation layer 113 can guide light emitted from the LED element 150 in a specific direction to improve luminous efficiency.

[0108] LED element 150 is electrically connected to pixel circuit PC and common power line CPL such that when current flows through LED element 150 from pixel circuit PC (i.e., driving thin film transistor T2) to common power line CPL, LED element 150 emits light. According to an exemplary embodiment of this disclosure, LED element 150 includes an emitting layer EL, a first electrode (or anode terminal) E1, and a second electrode (or cathode terminal) E2.

[0109] When electrons and holes recombine according to the current flowing between the first electrode E1 and the second electrode E2, the LED element 150 emits light.

[0110] Planarization layers 115-1 and 115-2 are disposed on passivation layer 113 such that they cover LED element 150. Specifically, planarization layers 115-1 and 115-2 are disposed on passivation layer 113 with sufficient thickness to cover the entire surface of passivation layer 113, i.e., LED element 150 and the rest of the front surface.

[0111] Planarization layers 115-1 and 115-2 may be composed of a single layer. Alternatively, as shown in the figure, planarization layers 115-1 and 115-2 may be composed of a multilayer structure including a first planarization layer 115-1 and a second planarization layer 115-2.

[0112] Planarization layers 115-1 and 115-2 provide a flat surface above passivation layer 113. In addition, planarization layers 115-1 and 115-2 are used to fix the position of LED element 150.

[0113] The pixel electrode PE connects the first electrode E1 of the LED element 150 to the drain DE of the driving thin-film transistor T2. Depending on the configuration of the thin-film transistor T2, the first electrode E1 may be connected to the source SE. The pixel electrode PE may be defined as the anode. According to an exemplary embodiment of this disclosure, the pixel electrode PE is disposed on the front surface of planarization layers 115-1 and 115-2 overlapping the first electrode E1 of the LED element 150 and the driving thin-film transistor T2. The pixel electrode PE is electrically connected to the drain DE or source of the driving thin-film transistor T2 through a first circuit contact hole CCH1 formed in the passivation layer 113 and the planarization layers 115-1 and 115-2, and electrically connected to the first electrode E1 of the LED element 150 through an electrode contact hole ECH formed in the planarization layers 115-1 and 115-2. Therefore, the first electrode E1 of the LED element 150 is electrically connected to the drain DE or source SE of the driving thin-film transistor T2 via the pixel electrode PE.

[0114] Although the drain DE is connected to the pixel electrode PE in the above description, the source SE may also be connected to the pixel electrode PE, as would be expected by those skilled in the art.

[0115] If the display device is a top-emitting type, the pixel electrode PE can be made of a transparent conductive material; if the display device is a bottom-emitting type, it can be made of a reflective conductive material. The transparent conductive material can be (but is not limited to) indium tin oxide (ITO), indium zinc oxide (IZO), etc. The reflective conductive material can be (but is not limited to) Al, Ag, Au, Pt, or Cu. The pixel electrode PE made of reflective conductive material can consist of a single layer including the reflective conductive material or multiple layers formed by stacking the single layers one by one.

[0116] The common electrode CE electrically connects the second electrode E2 of the LED element 150 to the common power line CPL and can be defined as the cathode. The common electrode CE is disposed on the front surface of the planarization layers 115-1 and 115-2, which overlap with the common power line CPL, while overlapping with the second electrode E2 of the LED element 150. The common electrode CE can be made of the same material as the pixel electrode PE.

[0117] According to an exemplary embodiment of this disclosure, one side of the common electrode CE is electrically connected to the common power line CPL through a second circuit contact hole CCH2 formed in the gate insulating layer 112, passivation layer 113, and planarization layers 115-1 and 115-2 overlapping with the common power line CPL. The other side of the common electrode CE is electrically connected to the second electrode E2 of the LED element 150 through an electrode contact hole ECH formed in the planarization layers 115-1 and 115-2 overlapping with the second electrode E2 of the LED element 150. Therefore, the second electrode E2 of the LED element 150 is electrically connected to the common power line CPL through the common electrode CE.

[0118] According to an exemplary embodiment of this disclosure, the pixel electrode PE and the common electrode CE can be formed together using an electrode patterning process involving deposition, photolithography, and etching processes on planarization layers 115-1 and 115-2, which include a first circuit contact hole CCH1, a second circuit contact hole CCH2, and an electrode contact hole ECH. Therefore, according to an exemplary embodiment of this disclosure, the pixel electrode PE and the common electrode CE for connecting the LED element 150 to the pixel circuit PC can be simultaneously provided, simplifying the electrode connection process. Furthermore, the processing time for connecting the LED element 150 to the pixel circuit PC can be significantly reduced, and the productivity of the display device can be improved.

[0119] According to an exemplary embodiment of this disclosure, the display device further includes a transparent buffer layer 116.

[0120] A transparent buffer layer 116 is disposed on the substrate 110 such that it covers the entire planarization layers 115-1 and 115-2 having the pixel electrode PE and the common electrode CE, to form a flat surface over the planarization layers 115-1 and 115-2 and protect the LED element 150 and the pixel circuit PC from external impacts. Therefore, the pixel electrode PE and the common electrode CE are disposed between the planarization layers 115-1 and 115-2 and the transparent buffer layer 116. According to an exemplary embodiment of this disclosure, the transparent buffer layer 116 may be (but is not limited to) an optically clear adhesive (OCA) or an optically clear resin (OCR).

[0121] According to an exemplary embodiment of the present disclosure, the display device further includes a reflective layer 111 disposed below the emission region of each sub-pixel SP.

[0122] A reflective layer 111 is disposed on the substrate 110 such that it overlaps with the emitting region including the LED element 150. The reflective layer 111 according to an exemplary embodiment of this disclosure may (but is not limited to) be formed of the same material as the gate GE of the driving thin-film transistor T2 and disposed on the same layer as the gate GE. The reflective layer 111 may be formed of the same material as one electrode of the driving thin-film transistor T2.

[0123] The reflective layer 111 reflects light incident from the LED element 150 back above the LED element 150. Therefore, the display device including the reflective layer 111 according to an exemplary embodiment of this disclosure has a top-emitting structure. However, when the display device according to an exemplary embodiment of this disclosure has a bottom-emitting structure, the reflective layer 111 may be omitted or disposed above the LED element 150.

[0124] Optionally, the reflective layer 111 may be formed of the same material as the source SE / drain DE of the driving thin film transistor T2 and disposed on the same layer as the source SE / drain DE.

[0125] In a display device according to an exemplary embodiment of the present disclosure, LED elements 150 mounted in each sub-pixel SP may be disposed on the portion of the adhesive member 114 located above the reflective layer 111.

[0126] The adhesive member 114 primarily secures the LED elements 150 of each sub-pixel SP. According to an exemplary embodiment of this disclosure, the adhesive member 114 contacts the bottom of the LED element 150. This prevents misalignment of the LED element 150 during the mounting process and facilitates smooth separation of the LED element 150 from the intermediate substrate used for transplantation, thereby minimizing defects in the process of transplanting the LED element 150.

[0127] According to an exemplary embodiment of this disclosure, the adhesive member 114 can be attached to the underside of the LED element 150 by dotting on each sub-pixel SP and spreading it through pressure applied during the mounting process of the light-emitting device. Therefore, the position of the LED element 150 can be primarily secured by the adhesive member 114. Thus, according to an exemplary embodiment of this disclosure, the mounting process of the light-emitting device can be performed by simply attaching the LED element 150 to a surface, thereby significantly reducing the time required for the mounting process.

[0128] The adhesive member 114 is sandwiched between the passivation layer 113 and the planarization layers 115-1 and 115-2, and between the LED element 150 and the passivation layer 113. According to another example, the adhesive member 114 is coated with a generally uniform thickness over the entire surface of the passivation layer 113, but the portion of the adhesive member 114 to form a contact hole can be removed during contact hole formation. Therefore, according to an exemplary embodiment of this disclosure, the adhesive member 114 is coated with a uniform thickness over the entire front surface of the passivation layer 113 immediately prior to the mounting process of the light-emitting device, thereby shortening the processing time for setting the adhesive member 114.

[0129] According to an exemplary embodiment of the present disclosure, the adhesive member 114 is disposed above the entire front surface of the passivation layer 113, such that the planarization layers 115-1 and 115-2 in this example cover the adhesive member 114.

[0130] According to another exemplary embodiment of this disclosure, there is a recess for separately accommodating an LED element 150, which can be attached to the recess by an adhesive member 114. However, depending on the process conditions for realizing the display device, the aforementioned recess for accommodating the LED element 150 can be eliminated.

[0131] According to an exemplary embodiment of the present disclosure, the mounting process of the light-emitting device may include a process of mounting a red light-emitting device in each red sub-pixel SP1, a process of mounting a green light-emitting device in each green sub-pixel SP2, and a process of mounting a blue light-emitting device in each blue sub-pixel SP3, and may also include a process of mounting a white light-emitting device in each white sub-pixel.

[0132] According to an exemplary embodiment of this disclosure, the mounting process may consist only of mounting white light-emitting devices in each sub-pixel. In this case, the substrate 110 includes a color filter layer overlapping the respective sub-pixel. The color filter layer transmits only white light with wavelengths corresponding to the color of the respective sub-pixel.

[0133] According to an exemplary embodiment of this disclosure, the mounting process may only include mounting a light-emitting device of a first color in each sub-pixel. In this case, the substrate 110 includes a wavelength conversion layer and a color filter layer overlapping each sub-pixel. The wavelength conversion layer emits light of a second color based on a portion of the light of the first color incident from the light-emitting device. The color filter layer transmits only light of the wavelength corresponding to the color of the respective sub-pixel from white light generated by the mixture of the first and second colors. The first color may be blue and the second color may be yellow. The wavelength conversion layer may include a phosphor or quantum dot that emits light of the second color based on the light of the first color.

[0134] Figure 4A and Figure 4B This is a plan view illustrating a light-emitting device according to an exemplary embodiment of the present disclosure. (Refer to...) Figure 4A and Figure 4B Combination Figures 1 to 3 Describe it.

[0135] According to an exemplary embodiment of this disclosure, an LED element 150 includes an emitter layer EL, a first electrode E1, a second electrode E2, and a structure 154. The emitter layer EL includes a first semiconductor layer 151, an active layer 152, and a second semiconductor layer 153. The LED element 150 emits light when electrons and holes recombine according to the current flowing between the first electrode E1 and the second electrode E2.

[0136] The first semiconductor layer 151 may be a p-type semiconductor layer, and the second semiconductor layer 153 may be an n-type semiconductor layer. In the following description, for ease of illustration, they are referred to as the first semiconductor layer 151 and the second semiconductor layer 153. Furthermore, depending on the electrical connection relationship, that is, depending on the semiconductor layers forming the electrical connection, the first electrode E1 and the second electrode E2 may be referred to as p-type electrodes or n-type electrodes. However, for ease of illustration, they may be referred to as the first electrode and the second electrode, respectively. Additionally, in the following description, the first semiconductor layer 151 and the second semiconductor layer 153 will be described as a p-type semiconductor layer and an n-type semiconductor layer, respectively. Conversely, the first semiconductor layer 151 and the second semiconductor layer 153 may be an n-type semiconductor layer and a p-type semiconductor layer, respectively.

[0137] A first semiconductor layer 151 is disposed on the active layer 152 to provide holes to the active layer 152. According to an exemplary embodiment of this disclosure, the first semiconductor layer 151 may be made of a p-GaN semiconductor material. The p-GaN semiconductor material may be GaN, AlGaN, InGaN, or AlInGaN. Mg, Zn, Be, etc., may be used as impurities for doping the second semiconductor layer 153.

[0138] The second semiconductor layer 153 provides electrons to the active layer 152. According to an exemplary embodiment of this disclosure, the second semiconductor layer 153 may be made of an n-GaN semiconductor material. The n-GaN semiconductor material may be GaN, AlGaN, InGaN, or AlInGaN. As impurities for doping the second semiconductor layer 153, Si, Ge, Se, Te, C, etc., may be used.

[0139] An active layer 152 is disposed on the second semiconductor layer 153. The active layer 152 has a multiple quantum well (MQW) structure, having a well layer and a barrier layer with a band gap higher than the band gap of the well layer. According to an exemplary embodiment of this disclosure, the active layer 152 may have a multiple quantum well structure such as InGaN / GaN.

[0140] The first electrode E1 is electrically connected to the first semiconductor layer 151 and to the drain DE or source SE of the driving transistor T2, which serves as the driving thin-film pixel. The second electrode E2 is connected to the common power line CPL.

[0141] The first electrode E1 can be a p-type electrode, and the second electrode E2 can be an n-type electrode. The types of the first electrode E1 and the second electrode E2 can be determined according to whether they supply electrons or holes, that is, whether they are electrically connected to a p-type semiconductor layer or an n-type semiconductor layer. However, in the following description, for the sake of illustration, they are referred to as the first electrode E1 and the second electrode E2.

[0142] Each of the first electrode E1 and the second electrode E2 according to an exemplary embodiment of the present disclosure may be made of a metallic material such as Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, or Cr, or at least an alloy thereof. According to another exemplary embodiment of the present disclosure, each of the first electrode E1 and the second electrode E2 may be made of a transparent conductive material. The transparent conductive material may be (but is not limited to) indium tin oxide (ITO) or indium zinc oxide (IZO).

[0143] Structure 154 is disposed between the first electrode E1 and the second electrode E2 on the same surface or layer, i.e., both are exposed on the top surface of the LED element 150, wherein the bottom surface of the LED element 150 is fixed to the layer structure of the display device substrate (preferably, adhesive member 114). Structure 154 may be formed of an insulating material composed of organic or inorganic materials, and may be configured such that it overlaps with at least a portion of the first electrode E1 or the second electrode E2.

[0144] As described above, structure 154 is configured to overlap a portion of one of the first electrode E1 and the second electrode E2. One side surface of structure 154 is configured to leave either the first electrode E1 or the second electrode E2 open. That is, structure 154 is disposed between the first electrode E1 and the second electrode E2 such that it covers a specific portion of one or both of the first electrode E1 and the second electrode E2.

[0145] At least one side surface of structure 154 has an inverted conical shape, such that the side surface or both side surfaces in contact with the first electrode E1 or the second electrode E2 may have an inverted conical shape.

[0146] The inverted conical shape of structure 154 is to prevent short circuits that may occur during the process of setting the pixel electrode PE and the common electrode CE so that the first electrode E1 and the second electrode E2 are electrically connected to the pixel electrode PE or the common electrode CE, in case the LED element 150 is not properly positioned due to processing errors. The step coverage of the pixel electrode PE and the common electrode CE cannot continue along the side surface of the inverted conical structure 154. Therefore, short circuits occurring between the first electrode E1 and the second electrode E2 can be minimized. A more detailed description of this will be given below.

[0147] According to an exemplary embodiment of this disclosure, an insulating layer made of SiO2 or SiNx is configured to cover the LED element 150 such that the first semiconductor layer 151, the active layer 152, and the second semiconductor layer 153 are not exposed.

[0148] Additionally, the second semiconductor layer 153, the active layer 152, and the first semiconductor layer 151 can be sequentially stacked on a semiconductor substrate to form the LED element 150. The semiconductor substrate includes a semiconductor material such as a sapphire substrate or a silicon substrate. This semiconductor substrate can be used as a substrate for growing each of the second semiconductor layer 153, the active layer 152, and the first semiconductor layer 151, and can then be separated from the second semiconductor layer 153 via a substrate separation process. The substrate separation process can be a laser lift-off or a chemical lift-off process. Therefore, when the growth semiconductor substrate is removed from the LED element 150, the LED element 150 can have a relatively small thickness and can be housed within individual sub-pixels (SPs).

[0149] Figure 5A and Figure 5B This is a diagram illustrating the connection of the electrodes of a light-emitting device according to an exemplary embodiment of the present disclosure.

[0150] Reference Figure 5A and Figure 5B Combination Figures 1 to 4B Structure 160 may not be disposed within LED element 150. Structure 160 may not be formed together with LED element 150, but may be disposed on LED element 150 after LED element 150 has been disposed on substrate 110.

[0151] A reflective electrode 111 (reflective layer 111) is disposed on the substrate 110. The reflective electrode 111 may be made of a metal with high reflectivity to increase luminous efficiency by reflecting light emitted from the LED element 150, and may be disposed in different locations or may be eliminated depending on the type of display device including the LED element 150.

[0152] Passivation layer 113 may be disposed on reflective electrode 111. Adhesive member 114 may be disposed on passivation layer 113. Passivation layer 113 can protect driving elements (thin-film transistors or various wiring electrodes disposed on substrate 110) and provide a flat surface for mounting LED element 150.

[0153] LED element 150 is disposed on adhesive member 114. Adhesive member 114 provides adhesive force that allows LED element 150 to be smoothly transferred from intermediate transfer substrate to substrate 110.

[0154] After setting the LED element 150, a planarization layer 115 is set to fix the LED element 150, so as to connect the first electrode E1 and the second electrode E2 to the pixel electrode PE and the common electrode CE.

[0155] Structure 160 may be made of the same material as planarization layer 115 and may be made of an insulating material, such as a dam layer disposed on planarization layer 115. For example, the dam layer may be made of organic insulating materials such as benzocyclobutene, polyimide, and photoacrylic acid. Structure 160 may also be an inorganic insulator made of inorganic materials.

[0156] When forming the LED element 150 on the semiconductor substrate, the structure 160 can be formed on the LED element 150. However, considering that one or more transfer processes may be involved for process convenience, the LED element 150 can be provided on the substrate 110, and then the structure 160 can be provided separately on the LED element 150.

[0157] Figures 6A to 6D This is a cross-sectional view illustrating the electrode connections of a light-emitting device according to various exemplary embodiments of the present disclosure. (Refer to...) Figures 6A to 6D Combination Figures 1 to 5B Various exemplary embodiments of a display device having a structure are described.

[0158] In the above structure, structure 154 can be integrated with LED element 150, or structure 160 can be formed and disposed after LED element 150 is disposed on substrate 110.

[0159] Including Figure 6A In the display device 100 with structures 154 and 160 shown, in the electrode contact hole (ECH) region of the LED element 150, the first electrode E1 is connected to the pixel electrode PE, and the second electrode E2 is electrically connected to the common electrode CE. Structures 154 and 160 are disposed between the first electrode E1 and the second electrode E2 and have regions overlapping with the first electrode E1 and / or the second electrode E2. Structures 154 and 160 have an inverted cone shape, having a surface adjacent to the first electrode E1 or the second electrode E2.

[0160] If the LED element 150 is positioned on the substrate 110 as designed, the likelihood of a short circuit occurring between the first electrode E1 and the second electrode E2 when the pixel element PE and the common electrode CE are disposed decreases.

[0161] Figure 6BAn example is shown in which the LED element 150 is misaligned from the substrate 110 due to errors or other external problems during the setting process. When this occurs, the first electrode E1 is covered by the pixel electrode PE when the pixel electrode PE is set through the electrode contact hole ECH, and the pixel electrode PE at least partially overlaps with the second electrode due to the misalignment.

[0162] The structure 160 electrically insulates the pixel electrode PE from the second electrode E2, thereby minimizing electrode connection defects to prevent both the first electrode E1 and the second electrode E2 from being electrically connected to the pixel electrode PE. Alternatively, defects in which both the first electrode E1 and the second electrode E2 are connected to the common electrode CE can be minimized.

[0163] That is, the display device 100 including the structure 160 can have a more flexible and highly reliable structure with respect to processing errors when setting the LED element 150.

[0164] Referring to Figure 6C , the LED element 150 includes a structure 154. Similar to the example shown in Figure 6B , when the LED element 150 is misaligned due to processing errors or the like, the structure 154 insulates the pixel electrode PE from the second electrode E2. As a result, electrode connection defects can be minimized to prevent both the first electrode E1 and the second electrode E2 from being electrically connected to the pixel electrode PE simultaneously.

[0165] Finally, referring to Figure 6D , the pixel electrode PE and the common electrode CE are electrically connected to the first electrode E1 and the second electrode E2 through the electrode contact hole ECH, and the pixel electrode PE and the common electrode CE should not be electrically connected to each other. However, when the size of the LED element 150 is very small (for example, several tens of micrometers or less), a defect in which the pixel electrode PE is connected to the common electrode CE may occur.

[0166] Referring to Figures 6A to 6D , the pixel electrode PE or the common electrode CE can be formed to extend above the structure. The pixel electrode PE connected to the first electrode E1 and the pixel electrode PE extending above the structures 154 and 160 can be electrically disconnected from each other through the structures 154 and 160 having an inverted conical shape. The common electrode CE connected to the second electrode E2 and the common electrode CE extending above the structures 154 and 160 can be electrically disconnected from each other through the structures 154 and 160 having an inverted conical shape.

[0167] The structure 160 has an inverted conical shape, and the side adjacent to the first electrode E1 or the second electrode E2 has an inverted conical shape. Therefore, since a conductive material with low step coverage is used in the process of setting the pixel electrode PE and the common electrode CE, the electrical connection on one side of the structure 160 is naturally disconnected.

[0168] By utilizing the inverted conical structure 160, defects in the electrical connection between the pixel electrode PE and the common electrode CE can be minimized, thereby improving process stability and increasing product reliability.

[0169] Exemplary embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments and modifications and variations can be made thereto without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments described herein are merely illustrative and not intended to limit the scope of the present disclosure. The technical concept of the present disclosure is not limited by the exemplary embodiments. Therefore, it should be understood that the above embodiments are not limiting but are illustrative in all respects. The scope of protection sought by the present invention is defined by the appended claims, and all equivalents thereof are to be construed as being within the true scope of the present disclosure.

Claims

1. A display device, the display device comprising: substrate; Thin-film transistors and common power lines are disposed on the substrate; A passivation layer is disposed on the thin-film transistor and the common power line; A light-emitting device is disposed on the passivation layer, and the light-emitting device includes a first electrode, a second electrode, and a structure disposed between the first electrode and the second electrode; A planarization layer is disposed on the passivation layer to cover the side surface of the light-emitting device; A pixel electrode, wherein the pixel electrode is electrically connected to the thin-film transistor through a first circuit contact hole in the passivation layer and the planarization layer, and is electrically connected to the first electrode through an electrode contact hole in the planarization layer; as well as A common electrode, which is electrically connected to the common power line through a second circuit contact hole formed in the passivation layer and the planarization layer, and electrically connected to the second electrode through an electrode contact hole formed in the planarization layer. The common electrode is separated from the pixel electrode through the structure.

2. The display device according to claim 1, wherein, The structure has an inverted conical shape on at least one side adjacent to the first electrode or the second electrode.

3. The display device according to claim 1, wherein, The structure at least partially overlaps with the first electrode and / or the second electrode.

4. The display device according to claim 1, wherein, The first electrode and the second electrode are located on the same plane.

5. The display device according to claim 1, wherein, The structure is made of insulating material.

6. The display device according to claim 1, wherein, The smaller side of the inverted cone shape of the structure is attached to the light-emitting device.

7. The display device according to claim 1, wherein, The structure is configured such that it overlaps with the first electrode and / or the second electrode, and wherein the pixel electrode and / or the common electrode extends above the structure.

8. The display device according to claim 1, wherein, The pixel electrode connected to the first electrode is disconnected from the pixel electrode extending above the structure, and / or the common electrode connected to the second electrode is disconnected from the common electrode extending above the structure.

9. The display device according to claim 1, wherein, The light-emitting device is disposed in a recess formed in the passivation layer of the substrate.

10. The display device according to claim 1, wherein, An adhesive member is disposed on the substrate, wherein the adhesive member is in contact with the bottom of the light-emitting device.

11. The display device according to claim 1, wherein, The reflective layer is disposed below the emitting region of the light-emitting device.

12. The display device according to claim 11, wherein, The reflective layer is formed of the same material as the electrodes of the thin-film transistor, and / or the reflective layer and the electrodes are disposed on the same layer.

13. The display device according to claim 1, wherein, The planarization layer is composed of a multi-layer structure including a first planarization layer and a second planarization layer.

14. A display device comprising: substrate; Thin-film transistors and common power lines are disposed on the substrate; An adhesive layer is disposed on the thin-film transistor and the common power line; A light-emitting device, wherein the light-emitting device is attached to the adhesive layer, the light-emitting device comprising: First semiconductor layer; An emission layer is located on a portion of the top surface of the first semiconductor layer; A second semiconductor layer is located on the emitter layer; A first electrode, wherein the first electrode is on the second semiconductor layer; The second electrode is located on other portions of the top surface of the first semiconductor layer; A structure disposed between the first electrode and the second electrode, and covering the edges of both the first electrode and the second electrode; A planarization layer is disposed on the adhesive layer to fix the light-emitting device to the substrate; Pixel electrode, the pixel electrode being configured to connect the thin-film transistor and the first electrode; and A common electrode, configured to connect the common power line and the second electrode, and separated from the pixel electrode by the structure.

15. The display device according to claim 14, wherein, The side surface of the emitter layer and the side surface of the second semiconductor layer are on the same plane, and the structure covers both the side surface of the emitter layer and the side surface of the second semiconductor layer.

16. The display device according to claim 15, wherein, The extension lines of the side surface of the emission layer and the extension lines of the side surface of the structure intersect each other.

17. The display device according to claim 15, wherein, The structure has an inverted conical shape on at least one side adjacent to the first electrode or the second electrode.

18. The display device according to claim 14, wherein, The top surface of the structure is parallel to the top surface of the planarization layer.

19. The display device according to claim 14, further comprising: A first circuit contact hole is located in the passivation layer and the adhesive layer; as well as The second circuit contact hole is located within the passivation layer and the adhesive layer. The pixel electrode is disposed in the first circuit contact hole, and the common electrode is disposed in the second circuit contact hole.

20. The display device according to claim 15, wherein, The first semiconductor layer is an n-type semiconductor, and the second semiconductor layer is a p-type semiconductor.

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