Display panel, manufacturing method thereof, and display device

Abstract

The present disclosure provides a display panel and a manufacturing method thereof, and a display device. The display panel includes a first area in which pixels are disposed, and a second area in which pixels having a lower pixel per inch (PPI) than the first area are disposed and a plurality of light-transmissive portions are disposed. The light-transmissive portions include circular or elliptical light-transmissive portions arranged in a zigzag pattern in the second area in a second direction intersecting the first direction. Each pixel group in the second area includes a second electrode, and the second electrode is removed from the light-transmissive area to expose the light-transmissive portions.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2020-0176852, filed on December 16, 2020, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to a display panel including an imaging area having pixels for reproducing an image, and a method for manufacturing the display panel. Background Technology

[0004] Electroluminescent display devices are broadly classified into inorganic and organic light-emitting display devices based on the materials contained in their light-emitting layers. Active-matrix organic light-emitting display devices can include organic light-emitting diodes (hereinafter referred to as "OLEDs") with self-emissive properties. OLEDs can be disposed on each pixel within an organic light-emitting display device. Organic light-emitting display devices offer advantages such as short response time, high luminous efficiency, excellent brightness, and wide viewing angles. They also possess a high contrast ratio and excellent color gamut, as such displays can represent black as perfect black across a wide range of grayscale levels.

[0005] The multimedia capabilities of mobile devices have been significantly improved. For example, smartphones now have built-in cameras by default, and the resolution of these cameras has been improved to the level of conventional digital cameras. However, the presence of one or more cameras, typically located at the top of the smartphone, limits the design of the associated display screen, making screen design difficult. To reduce the space occupied by the cameras, notch or punch-hole screen designs have been adopted in smartphones, but the screen size is still limited due to the cameras, thus requiring full-screen display. Summary of the Invention

[0006] To achieve full-screen display, a scheme for allocating an imaging area is proposed, in which low-resolution pixels are placed within the screen of the display panel, and the camera is positioned below the display panel in a location or area opposite to the imaging area. The imaging area within the screen serves as a transparent display for showing the image. In such an imaging area, due to the pixels, the corresponding light transmittance is reduced, resulting in low brightness. Furthermore, adding process masks for processes such as etching metals to improve light transmittance may increase manufacturing costs.

[0007] Therefore, the goal is to solve such problems and / or difficulties.

[0008] The embodiments described herein provide a display panel capable of increasing the light transmittance of the imaging area in a display screen, and a method for simplifying the manufacturing process of the display panel.

[0009] The problems or needs to be addressed in this disclosure are not limited to these, and other problems or needs will become apparent to those skilled in the art based on the following description.

[0010] According to one aspect of this disclosure, a display panel is provided, comprising: a first region having a plurality of pixels, a second region having a plurality of pixel groups, and at least one light-transmitting portion disposed between the plurality of pixel groups in the second region. Each of the at least one light-transmitting portion may be a circular light-transmitting portion arranged in a zigzag pattern along a first direction and a second direction intersecting the first direction in the second region, or may include a circular light-transmitting portion. Each of the plurality of pixel groups in the second region may include a second electrode. At least a portion of the second electrode may be removed from the light-transmitting region of the second region to form the light-transmitting portion.

[0011] According to another aspect of this disclosure, a display device including the above-described display panel is provided.

[0012] According to another aspect of this disclosure, a method for manufacturing a display panel is provided. The method provides a method for manufacturing a display panel having a display area and an imaging area, the display area including a first pixel area having a plurality of pixels, the imaging area including a second pixel area having a plurality of pixel groups, and at least one light-transmitting portion disposed between the plurality of pixel groups. The method includes forming a capacitor electrode in the pixel area of ​​the imaging area, and forming the light-transmitting portion by using the capacitor electrode as a mask to remove at least a portion of the second electrode of the imaging area by irradiating a laser beam.

[0013] According to another aspect of this disclosure, a display panel is provided. The display panel includes a first region having a plurality of pixels, a second region having a plurality of pixel groups, and at least one light-transmitting portion disposed between the plurality of pixel groups in the second region.

[0014] Each of at least one light-transmitting portion may be located in a region in which at least a portion of the second electrode included in the plurality of pixel groups disposed in the second region has been removed. Each of at least one light-transmitting portion may be located in at least a portion of a region other than the region where the capacitor electrode included in the plurality of pixel groups disposed in the second region is located.

[0015] The second electrode disposed in the second region can be removed in a region other than the region where the capacitor electrode disposed in the second region is located. The second electrode disposed in the second region can be located in a region that overlaps with the capacitor electrode disposed in the second region.

[0016] According to aspects of this disclosure, when a laser beam is used in the imaging area to remove the metal layer to be removed in order to form the light-transmitting portion, the light-transmitting portion can be patterned by using the lower metal layer without the need for an additional etch mask, thereby enabling the associated display panel to be manufactured with a simplified process and reduced manufacturing costs.

[0017] According to this disclosure, by completely removing the metal layer that needs to be removed to form the light-transmitting portion without leaving any residual film, the light transmittance of the imaging area can be increased, and the margin between the display area and the imaging area can be minimized.

[0018] According to aspects of this disclosure, by completely removing the metal layer that needs to be removed to form the light-transmitting portion without leaving any residual film, the light transmittance of the imaging area can be increased and the noise of the captured image data can be reduced.

[0019] The effects produced by the embodiments described herein are not limited thereto, and other effects will become apparent to those skilled in the art from the following description. Attached Figure Description

[0020] Figure 1 The display area and imaging area in the screen of a display panel according to an aspect of this disclosure are schematically shown.

[0021] Figure 2 The arrangement of pixels in a first region (display area DA) of a display panel according to an aspect of this disclosure is schematically shown.

[0022] Figure 3 The arrangement of pixel groups and at least one light-transmitting portion in a second region (imaging region CA) of a display panel according to an aspect of this disclosure is schematically shown.

[0023] Figure 4 Specifically, a cross-sectional structure of a pixel in the first region DA of a display panel according to an aspect of this disclosure is shown.

[0024] Figures 5 to 7 This is a cross-sectional view showing pixels in a display panel including a light-transmitting portion of a second region CA in various embodiments according to aspects of this disclosure. Detailed Implementation

[0025] The advantages and features of this disclosure, as well as the methods for implementing these advantages and features, will become apparent from the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments set forth below, but can be implemented in various different forms. The following embodiments are provided only to fully disclose this disclosure and to inform those skilled in the art of its scope, and this disclosure is limited only by the scope of the appended claims.

[0026] Furthermore, the shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, similar reference numerals generally denote similar elements. Additionally, in the following description of this disclosure, detailed descriptions of known functions and configurations incorporated herein will be omitted where it is determined that such detailed descriptions might make the subject matter of some embodiments of this disclosure considerably unclear.

[0027] Terms such as “including,” “having,” “comprising,” “consisting of,” and “composed of” used herein are generally intended to allow for the addition of additional components unless the term is used in conjunction with the term “only.” Unless the context clearly indicates otherwise, the singular form used herein is intended to include the plural form.

[0028] In interpreting any element or feature of embodiments of this disclosure, it should be considered that any dimensions and relative sizes of layers, regions, and extents include tolerances or error ranges, even when not specifically described.

[0029] Spatial relative terms such as “on top of,” “above,” “above,” “below,” “below,” “under,” “below,” “down,” “above,” “near,” “close to,” “adjacent,” etc., can be used to describe the relationship between one element or feature and another element or feature as shown in the figure, and should be interpreted as meaning that one or more elements may also “intervene” between these elements unless terms such as “directly” or “only” are used.

[0030] According to embodiments of this disclosure, when terms such as "first" and "second" are used to describe various elements or components, it should be understood that the corresponding elements or components are not limited to the meanings of these terms. That is, these terms are only used to distinguish an element or component from one or more other elements or components. Therefore, within the technical concept of this disclosure, the first element mentioned below can be a second element.

[0031] In this specification, similar reference numerals generally denote similar elements.

[0032] As will be fully understood by those skilled in the art, the elements or features of the various exemplary embodiments of this disclosure may be combined or integrated with each other in part or in whole, and may be technically interlocked and operated in various ways, and the various exemplary embodiments may be performed independently of each other or in relation to each other.

[0033] In the following, various embodiments of this disclosure will be described in detail with reference to the accompanying drawings.

[0034] Reference Figure 1 The screen of the display panel 900 includes at least a first area DA (also known as the display area) and a second area CA (also known as the imaging area).

[0035] The display area DA and the imaging area CA each include a pixel array in which pixels for writing pixel data are arranged. To ensure the light transmittance of the imaging area CA, the number of pixels per unit area of ​​the imaging area CA, i.e., pixels per inch (PPI), can be lower than the number of pixels per inch of the display area DA.

[0036] The pixel array of the display area DA may include a pixel region (i.e., a first pixel region) having a plurality of pixels with a relatively high PPI. The pixel array of the imaging area CA may be spaced apart by at least one light-transmitting portion and includes a pixel region (i.e., a second pixel region) having a plurality of pixel groups with a relatively low PPI. In the imaging area CA, external light can pass through the display panel 900 through at least one light-transmitting portion with high light transmittance and can be received by a camera module or image capture module below the display panel 900.

[0037] Since the display area DA and the imaging area CA both contain pixels, the input image can be reproduced in both the display area DA and the imaging area CA.

[0038] Each pixel in the display area DA and the imaging area CA includes sub-pixels of different colors to achieve a colored image. Each sub-pixel can be one of a red sub-pixel (hereinafter referred to as "R sub-pixel"), a green sub-pixel (hereinafter referred to as "G sub-pixel"), and a blue sub-pixel (hereinafter referred to as "B sub-pixel"). Although not shown, each pixel P may also include a white sub-pixel (hereinafter referred to as "W sub-pixel"). Each sub-pixel may include pixel circuitry and a light-emitting element, such as a light-emitting diode, and more specifically, an organic light-emitting diode (OLED).

[0039] The imaging area CA may include pixels and a camera module or image capture module (hereinafter referred to as the "image capture module") disposed below the screen of the display panel 900. In display mode, by writing the pixel data of the input image to the pixels of the imaging area CA, the input image can be displayed in the imaging area CA, including the lens, where the image capture module is located. In image capture mode, the image capture module can capture external still or moving images and output still or moving image data. The lens of the image capture module can face the imaging area CA. When external light enters the imaging area CA and reaches the lens of the image capture module, the lens can then focus the incident light onto the image sensor (…). Figure 1 (Not shown in the image). In image capture mode, the image capture module captures external static or dynamic images and outputs static or dynamic image data.

[0040] To ensure light transmittance, an image quality compensation algorithm can be applied to compensate for the brightness and color coordinates of pixels in the imaging region CA caused by pixels removed from the imaging region CA.

[0041] According to the implementation described herein, since pixels configured with low resolution are arranged in the imaging area CA, the display area of ​​the screen can be freed from the limitations of the image capture module, thus enabling full-screen display.

[0042] Despite Figure 1 Not shown in the diagram, but as will be described in detail later, the display panel 900 included in the display device according to embodiments of the present disclosure may include a circuit layer disposed above a substrate and a light-emitting element layer disposed above the circuit layer. A polarizing plate may be disposed above the light-emitting element layer, and a cover glass may be disposed on or above the polarizing plate.

[0043] The circuit layer may include pixel circuitry connected to wiring such as data lines, gate lines, and power lines, as well as gate drivers connected to the gate lines. The circuit layer may include circuit elements such as transistors like thin-film transistors (TFTs), at least one capacitor, etc. The wiring and circuit elements of the circuit layer may be implemented or disposed in multiple insulating layers, two or more metal layers separated by insulating layers therebetween, and an active layer comprising semiconductor material, or may be implemented or disposed using multiple insulating layers, two or more metal layers separated by insulating layers therebetween, and an active layer comprising semiconductor material.

[0044] The light-emitting element layer may include light-emitting elements driven by pixel circuitry. The light-emitting element may be implemented as an organic light-emitting diode (OLED). An OLED includes an organic compound layer located between an anode and a cathode. The organic compound layer may include a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), etc.; however, embodiments of this disclosure are not limited thereto. When a voltage is applied to the anode and cathode of the OLED, holes through the hole transport layer HTL and electrons through the electron transport layer ETL can move to the emissive layer EML and form excitons. Visible light can then be emitted from the emissive layer EML. The light-emitting element layer may be disposed on or above pixels that selectively transmit red, green, and blue light of corresponding wavelengths, and may also include a color filter array.

[0045] The light-emitting element layer can be covered by a passivation layer, and the passivation layer can be covered by an encapsulation layer. The passivation layer and encapsulation layer can have a multilayer structure, in which one or more organic films and one or more inorganic films are alternately stacked. The inorganic films can block the permeation of moisture or oxygen. The organic films can flatten the surface of the inorganic films. In a multilayer structure consisting of one or more organic films and one or more inorganic films stacked together, the path for moisture or oxygen to travel may become longer compared to a structure with a single layer; therefore, the permeation of moisture / oxygen affecting the light-emitting element layer can be effectively prevented or reduced.

[0046] A polarizing plate can be adhered to the encapsulation layer. The polarizing plate improves the visibility of the display device outdoors. The polarizing plate reduces light reflected from the surface of the display panel 900 and blocks light reflected from the metal of the circuit layer, thereby increasing pixel brightness.

[0047] Figure 2 An example of pixels arranged in the first region DA is shown.

[0048] Figure 3 An example of a pixel group and a light-transmitting portion set in the second region CA is shown. Figure 2 and Figure 3 In this text, the wiring connecting to the pixels is omitted.

[0049] Reference Figure 2 The first region DA comprises pixels arranged with a high PPI. Each pixel may include R, G, and B subpixels, or may include two subpixels of different colors. Each pixel may also include W subpixels (omitted in the accompanying drawings).

[0050] The luminous efficiency of the individual light-emitting elements included in a subpixel can vary based on color. With this in mind, the size of the subpixel can also vary based on color. For example, the B subpixel among the R, G, and B subpixels can be the largest, while the G subpixel can be the smallest.

[0051] Pixels can be arranged along a first direction (X-axis direction), a second direction perpendicular to the first direction (Y-axis direction), and the tilt angle direction between the first and second directions (the direction defined by the ΘX-axis and ΘY-axis). Here, the direction defined by the ΘX-axis and ΘY-axis represents a tilt direction in which the X-axis and Y-axis are each rotated by 45°.

[0052] Reference Figure 3 The pixels in the second region CA can be organized into multiple pixel groups PG, each PG comprising one or two pixels. Pixel groups PG can be spaced apart by a predetermined distance. Each light-transmitting element AG can be disposed in the space between pixel groups PG. External light can be incident on the lens of the image capture module through the light-transmitting element AG. The light-transmitting element AG can comprise a transparent medium with high light transmittance but does not include metal, allowing light to enter with minimal light loss. In other words, the light-transmitting element AG can be formed of a transparent insulating material but does not include metal lines or pixels. The light transmittance of the imaging region CA increases with the increase in the number or size of the light-transmitting elements AG. Therefore, because the light-transmitting elements AG are disposed between pixel groups PG, the PPI of the second region CA becomes lower than that of the first region DA.

[0053] Each pixel group PG may include one or two pixels, or may include three or four subpixels (R, G, and / or B subpixels). In addition, each pixel group PG may also include one or more W subpixels.

[0054] like Figure 3 As shown, each pixel group PG in the second region CA may include four sub-pixels. Each pixel group PG may include two pixels, PIX1 and PIX2. The first pixel PIX1 may include R and G sub-pixels, and the second pixel PIX2 may include B and G sub-pixels; however, embodiments of this disclosure are not limited thereto. Insufficient color representation in each of the first pixel PIX1 and the second pixel PIX2 using a sub-pixel rendering algorithm can be compensated for by averaging the corresponding color data between adjacent pixels. White can be represented by combining the R, G, and B sub-pixels of the first pixel PIX1 and the second pixel PIX2.

[0055] The light-transmitting portion AG can have various shapes. In one embodiment, the light-transmitting portion AG can have a circular, elliptical, or similar shape to obtain a captured image with minimized halo effects and increased light transmittance. In this case, the pixel group PG can be designed to have a rhomboid or square shape to amplify the light-transmitting portion AG, which has a circular, elliptical, or similar shape. The light-transmitting portion AG can be defined as the area in the screen where all metal layers have been removed.

[0056] It is possible to remove all or some of the material of one or more metal electrodes from the light-transmitting portion AG. In a method of manufacturing a display panel, a metal used as a cathode electrode can be uniformly deposited across the entire screen, and then, in a laser process, a portion of the deposited material corresponding only to the light-transmitting portion AG of the imaging area CA can be removed.

[0057] As described above, each pixel group PG includes a circuit layer and a light-emitting element layer, each containing pixel circuits for sub-pixels. At least a portion of the circuit layer may overlap with at least a portion of the light-emitting element layer or be spatially separated. The circuit layer of the pixel group PG may be configured in a rhomboid or square shape.

[0058] Figure 4 Specifically, a cross-sectional structure of a subpixel in the first region DA of a display panel according to an aspect of this disclosure is shown.

[0059] Reference Figure 4 Subpixels, defined by gate lines and data lines, are disposed above the substrate 100. Light-emitting elements 500 may be located in each subpixel. Each light-emitting element 500 may emit light representing a specific color. For example, each light-emitting element 500 may include a first electrode 510, a light-emitting layer 520, and a second electrode 530 stacked sequentially.

[0060] The first electrode 510 may include a conductive material. The first electrode 510 may include a metal with relatively high reflectivity. The first electrode 510 may have a multilayer structure. For example, the first electrode 510 may have a structure in which reflective electrodes formed of metals such as aluminum (Al) or silver (Ag) are located between transparent electrodes formed of transparent conductive materials such as ITO or IZO.

[0061] The light-emitting layer 520 can generate light with a brightness level corresponding to the voltage difference between the first electrode 510 and the second electrode 530. For example, the light-emitting layer 520 may include a light-emitting material layer (EML) comprising a light-emitting material. The light-emitting material may include organic materials, inorganic materials, or a mixture of materials. For example, a display device according to an aspect of this disclosure may be an organic light-emitting display device including a light-emitting layer 520 formed of an organic material.

[0062] To improve luminous efficiency, the light-emitting layer 520 may have a multilayer structure. For example, the light-emitting layer 520 may further include at least one first organic layer located between the first electrode 510 and the light-emitting material layer, and at least one second organic layer located between the light-emitting material layer and the second electrode 530. The first organic layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL). The second organic layer may include at least one of an electron transport layer (ETL) and an electron injection layer (EIL). However, embodiments of this disclosure are not limited thereto. For example, the first organic layer may include at least one of an electron transport layer (ETL) and an electron injection layer (EIL), and the second organic layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL).

[0063] The second electrode 530 may include a conductive material. The second electrode 530 may include a material different from the first electrode 510. For example, the second electrode 530 may be a transparent electrode formed of a transparent conductive material such as ITO or IZO. Therefore, in the display device according to the embodiments described herein, light generated by the light-emitting layer 520 of each pixel can propagate to the outside through the second electrode 530.

[0064] To prevent moisture from penetrating into the light-emitting element 500, an encapsulation portion 170 can be provided to cover the light-emitting element 500. For example, the encapsulation portion 170 for preventing moisture penetration can be provided on the second electrode 530 of the light-emitting element 500.

[0065] The encapsulation portion 170 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation portion 170 may include a first encapsulation layer 171 comprising an inorganic material, a second encapsulation layer 172 comprising an organic material, and a third encapsulation layer 173 comprising an inorganic material. The first encapsulation layer 171 of the encapsulation portion 170 may be disposed on the second electrode 530. The second encapsulation layer 172 may be disposed on the first encapsulation layer 171. The third encapsulation layer 173 may be disposed on the second encapsulation layer 172. The first encapsulation layer 171 and the third encapsulation layer 173 of the encapsulation portion 170 may be formed of inorganic materials such as silicon nitride (SiNx) and silicon oxide (SiOx). The second encapsulation layer 172 of the encapsulation portion 170 may be formed of organic materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0066] A drive current corresponding to the gate signal provided through the corresponding gate line and the data signal provided through the corresponding data line can be provided to each light-emitting element 500. For example, a drive circuit electrically connected to the light-emitting element 500 can be located in each pixel. The drive circuit can control the operation of the light-emitting element 500 according to the gate signal and the data signal. For example, the drive circuit may include a first thin-film transistor 200, a second thin-film transistor 300, and a storage capacitor 400.

[0067] The first thin-film transistor 200 may include a first semiconductor pattern 210, a first gate insulating film 220, a first gate electrode 230, a first interlayer insulating film 240, a first source electrode 250, and a first drain electrode 260.

[0068] The first semiconductor pattern 210 may be located close to the substrate 100. The first semiconductor pattern 210 may include a semiconductor material. For example, the first semiconductor pattern 210 may include polysilicon (Poly-Si), which is a polycrystalline semiconductor material. In some embodiments, the first semiconductor pattern 210 may include low-temperature polysilicon (LTPS).

[0069] The first semiconductor pattern 210 may include a first source region, a first drain region, and a first channel region. The first channel region may be located between the first source region and the first drain region. The first channel region may have a relatively lower conductivity than the first source region and the first drain region. For example, the first source region and the first drain region may have a higher content of conductivity-type impurities than the first channel region.

[0070] A first gate insulating film 220 may be disposed on the first semiconductor pattern 210. The first gate insulating film 220 may extend beyond the outer edges of both sides of the first semiconductor pattern 210. The first gate insulating film 220 may include an insulating material. For example, the first gate insulating film 220 may include a silicon oxide-based (SiOx) material. The silicon oxide-based (SiOx) material may include silicon dioxide (SiO2).

[0071] The first gate electrode 230 may be located on the first gate insulating film 220. For example, the first gate electrode 230 may overlap with the first channel region of the first semiconductor pattern 210. Since the first gate insulating film 220 is located between the first gate electrode 230 and the first semiconductor pattern 210, the first gate electrode 230 may be insulated from the first semiconductor pattern 210. The first gate electrode 230 may include a conductive material. For example, the first gate electrode 230 may include metals such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), etc.

[0072] The first interlayer insulating film 240 may be disposed on or above the first gate insulating film 220 and the first gate electrode 230. The first interlayer insulating film 240 may extend along the first gate insulating film 220. The first interlayer insulating film 240 may include an insulating material. The first interlayer insulating film 240 may include a material different from the first gate insulating film 220. For example, the first interlayer insulating film 240 may include a silicon nitride-based material (SiNx).

[0073] The first source electrode 250 may be electrically connected to the first source region of the first semiconductor pattern 210. The first interlayer insulating film 240 may include a first source contact hole that exposes a portion of the first source region of the first semiconductor pattern 210. A portion of the first source electrode 250 may overlap with the first source region of the first semiconductor pattern 210.

[0074] The first source electrode 250 may include a conductive material. For example, the first source electrode 250 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc.

[0075] The first drain electrode 260 may be electrically connected to the first drain region of the first semiconductor pattern 210. The first interlayer insulating film 240 may include a first drain contact hole that exposes a portion of the first drain region of the first semiconductor pattern 210. A portion of the first drain electrode 260 may overlap with the first drain region of the first semiconductor pattern 210.

[0076] The first drain electrode 260 may include a conductive material. For example, the first drain electrode 260 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first drain electrode 260 may include the same material as the first source electrode 250. For example, the first drain electrode 260 may be formed using the same process as the first source electrode 250.

[0077] The first source electrode 250 and the first drain electrode 260 can have a multilayer structure. For example, the first source electrode 250 and the first drain electrode 260 can be composed of three layers. When the first source electrode 250 and the first drain electrode 260 are composed of three layers, the top and bottom layers can be titanium (Ti) metal layers, and the intermediate layer between the top and bottom layers can be an aluminum (Al) metal layer.

[0078] The second thin-film transistor 300 can be formed using a different process than that used for the first thin-film transistor 200. For example, the second thin-film transistor 300 can be located on the second separating insulating film 130 of the first thin-film transistor 200. The second separating insulating film 130 can include an insulating material. The second separating insulating film 130 can include a material different from that used for the first interlayer insulating film 240. For example, the second separating insulating film 130 can include a silicon oxide-based (SiOx) material.

[0079] The second thin-film transistor 300 may have the same structure as the first thin-film transistor 200. For example, the second thin-film transistor 300 may include a second semiconductor pattern 310, a second gate insulating film 320, a second gate electrode 330, a second interlayer insulating film 340, a second source electrode 350, and a second drain electrode 360.

[0080] The second semiconductor pattern 310 may be located close to the second separating insulating film 130. For example, the second semiconductor pattern 310 may be in direct contact with the second separating insulating film 130. The second semiconductor pattern 310 may include a semiconductor material. The second semiconductor pattern 310 may include a material different from the first semiconductor pattern 210. For example, the second semiconductor pattern 310 may include an oxide semiconductor such as IGZO.

[0081] The second semiconductor pattern 310 may include a second source region, a second drain region, and a second channel region. The second channel region may be located between the second source region and the second drain region. The resistance of the second source region and the resistance of the second drain region may be lower than the resistance of the second channel region. For example, the second source region and the second drain region may be regions modified to be used as conductive materials. The second channel region may be a region not modified to be used as conductive materials. For example, a doping process may be performed to enable the second source region and the second drain region to be used as conductive materials.

[0082] The second gate insulating film 320 may be located on the second semiconductor pattern 310. The second gate insulating film 320 may include an insulating material. For example, the second gate insulating film 320 may include a silicon oxide-based (SiOx) material, a silicon nitride-based (SiNx) material, and / or a material having a high dielectric constant (high k). The second gate insulating film 320 may have a multilayer structure.

[0083] The second gate electrode 330 may be located on the second gate insulating film 320. For example, the second gate electrode 330 may overlap with the second channel region of the second semiconductor pattern 310. For example, the second gate insulating film 320 may include a second source contact hole and a second drain contact hole that respectively expose at least a portion of the second source region and at least a portion of the second drain region of the second semiconductor pattern 310.

[0084] The second gate electrode 330 may include a conductive material. For example, the second gate electrode 330 may include metals such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), etc. The second gate electrode 330 may include the same material as the first gate electrode 230.

[0085] The second interlayer insulating film 340 may be disposed on or above the second semiconductor pattern 310 and the second gate electrode 330. The second interlayer insulating film 340 may include an insulating material. The second interlayer insulating film 340 may include a material different from the first interlayer insulating film 240. For example, the second interlayer insulating film 340 may include a silicon oxide-based material (SiOx).

[0086] The second source electrode 350 may be located on the second interlayer insulating film 340. The second source electrode 350 may be electrically connected to the second source region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second source contact hole that exposes at least a portion of the second source region of the second semiconductor pattern 310. A portion of the second source electrode 350 may overlap with the second source region of the second semiconductor pattern 310.

[0087] The second source electrode 350 may include a conductive material. For example, the second source electrode 350 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The second source electrode 350 may include the same material as the first source electrode 250.

[0088] The second drain electrode 360 ​​may be located on the second interlayer insulating film 340. The second drain electrode 360 ​​may be electrically connected to the second drain region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second drain contact hole that exposes at least a portion of the second drain region of the second semiconductor pattern 310. A portion of the second drain electrode 360 ​​may overlap with the second drain region of the second semiconductor pattern 310.

[0089] The second drain electrode 360 ​​may include a conductive material. For example, the second drain electrode 360 ​​may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second drain electrode 360 ​​may include the same material as the second source electrode 350. For example, the second drain electrode 360 ​​may be formed using the same process as the second source electrode 350.

[0090] The second source electrode 350 and the second drain electrode 360 ​​can have a multilayer structure. For example, the second source electrode 350 and the second drain electrode 360 ​​can be composed of three layers. When the second source electrode 350 and the second drain electrode 360 ​​are composed of three layers, the top and bottom layers can be titanium (Ti) metal layers, and the intermediate layer between the top and bottom layers can be an aluminum (Al) metal layer.

[0091] The first source electrode 250 and the first drain electrode 260, the second source electrode 350 and the second drain electrode 360 ​​are located on the second interlayer insulating film 340 and can be formed in the same process and made of the same material.

[0092] The storage capacitor 400 may be formed between the substrate 100 and the second thin-film transistor 300. For example, the storage capacitor 400 may include a first storage electrode 410 disposed on the same layer as the first gate electrode 230 and a second storage electrode 420 disposed above the first storage electrode 410.

[0093] The first storage electrode 410 may include a conductive material. The first storage electrode 410 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The first storage electrode 410 may include the same material as the first gate electrode 230. For example, the first storage electrode 410 may be formed using the same process as the first gate electrode 230.

[0094] The second storage electrode 420 may include a conductive material. The second storage electrode 420 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The first interlayer insulating film 240 may extend between the first storage electrode 410 and the second storage electrode 420. The second storage electrode 420 may be located on the first interlayer insulating film 240.

[0095] The first source electrode 250 and the first drain electrode 260 may be located on a different layer than the first storage electrode 420. For example, the first separating insulating film 120 covering the second storage electrode 420 may extend between the first interlayer insulating film 240 and the first source electrode 250, and between the first interlayer insulating film 240 and the first drain electrode 260.

[0096] The first interlayer insulating film 240 and the first separation insulating film 120 may be stacked sequentially between the first gate electrode 230 and the first source electrode 250, and between the first gate electrode 230 and the first drain electrode 260. The second storage electrode 420 may include a material different from the first source electrode 250 and the first drain electrode 260.

[0097] The first separation insulating film 120 may include an insulating material. For example, the first separation insulating film 120 may include a silicon oxide-based material (SiOx) and / or a silicon nitride-based material (SiNx). The first separation insulating film 120 may have a multilayer structure. The first source electrode 250 and the first drain electrode 260 may be located on the second interlayer insulating film 340. However, embodiments of this disclosure are not limited thereto.

[0098] The first storage electrode 410 can be electrically connected to the second drain electrode 360 ​​of the second thin-film transistor 300. For example, a first intermediate electrode 610 can be provided, which is connected to the first storage electrode 410 by passing through the first interlayer insulating film 240, the first separation insulating film 120, the second separation insulating film 130, the second gate insulating film 320, and the second interlayer insulating film 340. In this case, the second drain electrode 360 ​​can be connected to the first intermediate electrode 610. The first intermediate electrode 610 can include a conductive material. For example, the first intermediate electrode 610 can include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The first intermediate electrode 610 can include the same material as the first source electrode 250, the first drain electrode 260, the second source electrode 350, and the second drain electrode 360. For example, the first intermediate electrode 610 can be formed using the same process as the first source electrode 250, the first drain electrode 260, the second source electrode 350, and the second drain electrode 360.

[0099] A buffer insulating film 110 may be located between the substrate 100 and the driving circuitry (e.g., at least one thin-film transistor and at least one storage capacitor) of each sub-pixel. The buffer insulating film 110 prevents contamination of the substrate 100 during the formation of the driving circuitry. For example, the buffer insulating film 110 may extend between the substrate 100 and the first semiconductor pattern 210 of each sub-pixel. The buffer insulating film 110 may include an insulating material. For example, the buffer insulating film 110 may include a silicon oxide-based (SiOx) material and / or a silicon nitride-based (SiNx) material. The buffer insulating film 110 may have a multilayer structure. For example, the buffer insulating film 110 may have a stacked structure including a first buffer insulating film 111 and a second buffer insulating film 112, the second buffer insulating film 112 comprising a material different from that of the first buffer insulating film 111.

[0100] The first planarization layer 140 and the second planarization layer 150 may be sequentially stacked between the second thin-film transistor 300 and the light-emitting element 500 of each sub-pixel. The first planarization layer 140 and the second planarization layer 150 can eliminate step differences caused by the driving circuitry of each pixel. For example, the surface of the second planarization layer 150 facing the light-emitting element 500 of each sub-pixel may be a flat surface. The first planarization layer 140 and the second planarization layer 150 may include an insulating material. The first planarization layer 140 and the second planarization layer 150 may include a material different from the second interlayer insulating film 340. For example, the first planarization layer 140 and the second planarization layer 150 may include an organic insulating material. The second planarization layer 150 may include a material different from the first planarization layer 140.

[0101] The light-emitting element 500 of each sub-pixel can be electrically connected to the first thin-film transistor 200 of the corresponding pixel, and the first electrode 510 can be electrically connected to the first drain electrode 260 through the first connection electrode 620. For example, the first connection electrode 620 can be located between the first planarization layer 140 and the second planarization layer 150. The first connection electrode 620 can be connected to the first drain electrode 260 through the first planarization layer 140, and the first electrode 510 can be connected to the first connection electrode 620 through the second planarization layer 150.

[0102] The first connecting electrode 620 may include a conductive material. For example, the first connecting electrode 620 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc.

[0103] Each sub-pixel's light-emitting element 500 can be driven independently. For example, the first electrode 510 of each sub-pixel can be insulated from the first electrodes 510 of adjacent sub-pixels. The edge of each first electrode 510 can be covered by a dam / spacer insulating film 160, which includes a dam insulating film 161 and a spacer insulating film 162. The dam / spacer insulating film 160 can be located on the second planarization layer 150. The light-emitting layer 520 and the second electrode 530 of each pixel can be disposed on the corresponding first electrode 510 exposed by the dam / spacer insulating film 160. The dam / spacer insulating film 160 can include an insulating material. For example, the dam / spacer insulating film 160 can include an organic insulating material. The dam / spacer insulating film 160 can include a material different from the material of the second planarization layer 150.

[0104] At least a portion of the light-emitting layer 520 of each sub-pixel may extend along the embankment / spacer insulating film 160. For example, the first organic layer and the second organic layer of each sub-pixel may be connected to the first organic layer and the second organic layer of adjacent sub-pixels, respectively. The light-emitting material layer EML of each sub-pixel may be spaced apart from the light-emitting material layers EML of adjacent sub-pixels. The second electrode 530 of each pixel may extend along the embankment / spacer insulating film 160. For example, the second electrode 530 of each sub-pixel may be connected to the second electrode 530 of adjacent pixels.

[0105] According to the embodiments described herein, the first thin-film transistor 200 can be used as a driving transistor. Therefore, the first electrode 510 of the light-emitting element 500 can be connected to the first thin-film transistor 200; however, the embodiments of this disclosure are not limited thereto. For example, the first electrode 510 of the light-emitting element 500 can be connected to a second thin-film transistor 300. The second thin-film transistor 300 can be used as a driving transistor.

[0106] Figure 5 Specifically, a cross-sectional structure of a subpixel in the second region CA of a display panel according to an aspect of this disclosure is shown.

[0107] Reference Figure 5 The process of setting the second thin-film transistor 300, light-emitting element 500, encapsulation portion 170, dike / spacer insulating film 160, etc., included in the second region CA of the display panel 900 according to aspects of this disclosure can be substantially equivalent to setting Figure 4 The process of the components in the first region DA shown.

[0108] The substrate 100 of the second region CA may include sub-pixels defined by gate lines and data lines. Light-emitting elements 500 may be located in each sub-pixel. Each light-emitting element 500 may emit light representing a specific color. For example, each light-emitting element 500 may include a first electrode 510, a light-emitting layer 520, and a second electrode 530A stacked sequentially.

[0109] The first electrode 510 may include a conductive material. The first electrode 510 may include a metal with relatively high reflectivity. The first electrode 510 may have a multilayer structure. For example, the first electrode 510 may have a structure in which reflective electrodes formed of metals such as aluminum (Al) or silver (Ag) are located between transparent electrodes formed of transparent conductive materials such as ITO or IZO.

[0110] The light-emitting layer 520 can generate light with a brightness level corresponding to the voltage difference between the first electrode 510 and the second electrode 530A. For example, the light-emitting layer 520 may include a light-emitting material layer (EML) comprising a light-emitting material. The light-emitting material may include organic materials, inorganic materials, or a mixture of materials. For example, a display device according to an aspect of this disclosure may be an organic light-emitting display device including a light-emitting layer 520 formed of an organic material.

[0111] To improve luminous efficiency, the light-emitting layer 520 may have a multilayer structure. For example, the light-emitting layer 520 may also include at least one first organic layer located between the first electrode 510 and the light-emitting material layer, and at least one second organic layer located between the light-emitting material layer and the second electrode 530A.

[0112] The first organic layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL).

[0113] The second organic layer may include at least one of an electron transport layer (ETL) and an electron injection layer (EIL). However, embodiments of this disclosure are not limited thereto. For example, the first organic layer may include at least one of an electron transport layer (ETL) and an electron injection layer (EIL), and the second organic layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL).

[0114] The second electrode 530A may include a conductive material. The second electrode 530A may include a material different from the first electrode 510. For example, the second electrode 530A may be a transparent electrode formed of a transparent conductive material such as ITO or IZO. Therefore, in the display device according to the embodiments described herein, light generated by the light-emitting layer 520 of each pixel can propagate to the outside through the second electrode 530A.

[0115] To prevent moisture from penetrating into the light-emitting element 500, an encapsulation portion 170 can be provided to cover the light-emitting element 500. For example, the encapsulation portion 170 for preventing moisture penetration can be provided on the second electrode 530A of the light-emitting element 500.

[0116] The encapsulation portion 170 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation portion 170 may include a first encapsulation layer 171 comprising an inorganic material, a second encapsulation layer 172 comprising an organic material, and a third encapsulation layer 173 comprising an inorganic material. The first encapsulation layer 171 of the encapsulation portion 170 may be disposed on the second electrode 530A. The second encapsulation layer 172 may be disposed on the first encapsulation layer 171. The third encapsulation layer 173 may be disposed on the second encapsulation layer 172. The first encapsulation layer 171 and the third encapsulation layer 173 of the encapsulation portion 170 may be formed of inorganic materials such as silicon nitride (SiNx) and silicon oxide (SiOx). The second encapsulation layer 172 of the encapsulation portion 170 may be formed of organic materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0117] A drive current corresponding to the gate signal provided through the corresponding gate line and the data signal provided through the corresponding data line can be provided to each light-emitting element 500. For example, a drive circuit electrically connected to the light-emitting element 500 can be located in each pixel. The drive circuit can control the operation of the light-emitting element 500 according to the gate signal and the data signal. For example, the drive circuit may include a second thin-film transistor 300 and a storage capacitor 710.

[0118] The second thin-film transistor 300 can be formed using a different process than that used for the first thin-film transistor 200 in the first region DA. For example, the second thin-film transistor 300 can be located on the second separation insulating film 130 of the first thin-film transistor 200. The second separation insulating film 130 can include an insulating material. The second separation insulating film 130 can include a material different from the first interlayer insulating film 240. For example, the second separation insulating film 130 can include a silicon oxide-based (SiOx) material.

[0119] For example, the structure of the second thin-film transistor 300 may include a second semiconductor pattern 310, a second gate insulating film 320, a second gate electrode 330, a second interlayer insulating film 340, a second source electrode 350, and a second drain electrode 360.

[0120] The second semiconductor pattern 310 may be located close to the second separating insulating film 130. For example, the second semiconductor pattern 310 may be in direct contact with the second separating insulating film 130. The second semiconductor pattern 310 may include a semiconductor material. For example, the second semiconductor pattern 310 may include an oxide semiconductor such as IGZO.

[0121] The second semiconductor pattern 310 may include a second source region, a second drain region, and a second channel region. The second channel region may be located between the second source region and the second drain region. The resistance of the second source region and the resistance of the second drain region may be lower than the resistance of the second channel region. For example, the second source region and the second drain region may be regions modified to be used as conductive materials. The second channel region may be a region not modified to be used as conductive materials. For example, a doping process may be performed to enable the second source region and the second drain region to be used as conductive materials.

[0122] The second gate insulating film 320 may be located on the second semiconductor pattern 310. The second gate insulating film 320 may include an insulating material. For example, the second gate insulating film 320 may include a silicon oxide-based (SiOx) material, a silicon nitride-based (SiNx) material, and / or a material having a high dielectric constant (high k). The second gate insulating film 320 may have a multilayer structure.

[0123] The second gate electrode 330 may be located on the second gate insulating film 320. For example, the second gate electrode 330 may overlap with the second channel region of the second semiconductor pattern 310. For example, the second gate insulating film 320 may include a second source contact hole and a second drain contact hole that respectively expose at least a portion of the second source region and at least a portion of the second drain region of the second semiconductor pattern 310.

[0124] The second gate electrode 330 may include a conductive material. For example, the second gate electrode 330 may include metals such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), etc.

[0125] The second interlayer insulating film 340 may be disposed on or above the second semiconductor pattern 310 and the second gate electrode 330. The second interlayer insulating film 340 may include an insulating material. The second interlayer insulating film 340 may include a material different from the first interlayer insulating film 240. For example, the second interlayer insulating film 340 may include a silicon oxide-based material (SiOx).

[0126] The second source electrode 350 may be located on the second interlayer insulating film 340. The second source electrode 350 may be electrically connected to the second source region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second source contact hole that exposes at least a portion of the second source region of the second semiconductor pattern 310. A portion of the second source electrode 350 may overlap with the second source region of the second semiconductor pattern 310.

[0127] The second source electrode 350 may include a conductive material. For example, the second source electrode 350 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The second source electrode 350 may include the same material as the first source electrode 250.

[0128] The second drain electrode 360 ​​may be located on the second interlayer insulating film 340. The second drain electrode 360 ​​may be electrically connected to the second drain region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second drain contact hole that exposes at least a portion of the second drain region of the second semiconductor pattern 310. A portion of the second drain electrode 360 ​​may overlap with the second drain region of the second semiconductor pattern 310.

[0129] The second drain electrode 360 ​​may include a conductive material. For example, the second drain electrode 360 ​​may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second drain electrode 360 ​​may include the same material as the second source electrode 350. For example, the second drain electrode 360 ​​may be formed using the same process as the second source electrode 350.

[0130] The second source electrode 350 and the second drain electrode 360 ​​can have a multilayer structure. For example, the second source electrode 350 and the second drain electrode 360 ​​can be composed of three layers. When the second source electrode 350 and the second drain electrode 360 ​​are composed of three layers, the top and bottom layers can be titanium (Ti) metal layers, and the intermediate layer between the top and bottom layers can be an aluminum (Al) metal layer.

[0131] The storage capacitor 710 may be formed between the substrate 100 and the second thin-film transistor 300. For example, the storage capacitor 710 may include: a first storage electrode 711, which is disposed on the same layer as the first gate electrode 230 disposed in the first region DA; and a second storage electrode 712, which is disposed on the same layer as the second storage electrode 420 disposed in the first region DA and located on the first storage electrode 711.

[0132] The second electrode 530A, located in the second region, is situated in the region overlapping with the first storage electrode 711 located in the second region.

[0133] The first thin-film transistor 300 disposed in the first region is disposed in a different layer than the layer in which the thin-film transistor 300 is disposed: the thin-film transistor 300 is disposed in the second region.

[0134] The first storage electrode 711 may include a conductive material. The first storage electrode 711 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The first storage electrode 711 may include the same material as the first gate electrode 230 of the first region DA. For example, the first storage electrode 711 may be formed using the same process as the first gate electrode 230 of the first region DA.

[0135] The second storage electrode 712 may include a conductive material. The second storage electrode 712 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first interlayer insulating film 240 may extend between the first storage electrode 711 and the second storage electrode 712. The second storage electrode 712 may be located on the first interlayer insulating film 240.

[0136] The first separation insulating film 120 may include an insulating material. For example, the first separation insulating film 120 may include a silicon oxide-based material (SiOx) and / or a silicon nitride-based material (SiNx). The first separation insulating film 120 may have a multilayer structure.

[0137] The first storage electrode 711 can be electrically connected to the second drain electrode 360 ​​of the second thin-film transistor 300. For example, a first intermediate electrode 610 can be provided, which is connected to the first storage electrode 711 by passing through the first interlayer insulating film 240, the first separation insulating film 120, the second separation insulating film 130, the second gate insulating film 320, and the second interlayer insulating film 340. In this case, the second drain electrode 360 ​​can be connected to the first intermediate electrode 610. The first intermediate electrode 610 can include a conductive material. For example, the first intermediate electrode 610 can include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and copper (Cu). The second source electrode 350 can include the same material as the second drain electrode 360. For example, the first intermediate electrode 610 can be formed using the same process as the second source electrode 350 and the second drain electrode 360.

[0138] A buffer insulating film 110 may be located between the substrate 100 and the driving circuitry (e.g., at least one thin-film transistor and at least one storage capacitor) of each sub-pixel. The buffer insulating film 110 prevents contamination of the substrate 100 during the formation of the driving circuitry. For example, the buffer insulating film 110 may comprise a silicon oxide-based (SiOx) material and / or a silicon nitride-based (SiNx) material. The buffer insulating film 110 may have a multilayer structure. For example, the buffer insulating film 110 may have a stacked structure including a first buffer insulating film 111 and a second buffer insulating film 112, the second buffer insulating film 112 comprising a material different from that of the first buffer insulating film 111.

[0139] The first planarization layer 140 and the second planarization layer 150 may be sequentially stacked between the second thin-film transistor 300 and the light-emitting element 500 of each sub-pixel. The first planarization layer 140 and the second planarization layer 150 can eliminate step differences caused by the driving circuitry of each pixel. For example, the surface of the second planarization layer 150 facing the light-emitting element 500 of each sub-pixel may be a flat surface. The first planarization layer 140 and the second planarization layer 150 may include an insulating material. The first planarization layer 140 and the second planarization layer 150 may include a material different from the second interlayer insulating film 340. For example, the first planarization layer 140 and the second planarization layer 150 may include an organic insulating material. The second planarization layer 150 may include a material different from the first planarization layer 140.

[0140] The light-emitting element 500 of each sub-pixel can be electrically connected to the second thin-film transistor 300 of the corresponding pixel, and the first electrode 510 can be electrically connected to the second drain electrode 360 ​​through the first connection electrode 620. For example, the first connection electrode 620 can be located between the first planarization layer 140 and the second planarization layer 150. The first connection electrode 620 can be connected to the second drain electrode 360 ​​through the first planarization layer 140, and the first electrode 510 can be connected to the first connection electrode 620 through the second planarization layer 150.

[0141] The first connecting electrode 620 may include a conductive material. For example, the first connecting electrode 620 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc.

[0142] Each sub-pixel's light-emitting element 500 can be driven independently. For example, the first electrode 510 of each sub-pixel can be insulated from the first electrodes 510 of adjacent sub-pixels. The edge of each first electrode 510 can be covered by a dam / spacer insulating film 160, which includes a dam insulating film 161 and a spacer insulating film 162. The dam / spacer insulating film 160 can be located on the second planarization layer 150. The light-emitting layer 520 and the second electrode 530A of each pixel can be disposed on the corresponding first electrode 510 exposed by the dam / spacer insulating film 160. The dam / spacer insulating film 160 can include an insulating material. For example, the dam / spacer insulating film 160 can include an organic insulating material. The dam / spacer insulating film 160 can include a material different from the second planarization layer 150.

[0143] At least a portion of the light-emitting layer 520 of each sub-pixel may extend along the embankment / spacer insulating film 160. For example, the first organic layer and the second organic layer of each sub-pixel may be connected to the first organic layer and the second organic layer of adjacent sub-pixels, respectively. The light-emitting material layer EML of each sub-pixel may be spaced apart from the light-emitting material layers EML of adjacent sub-pixels.

[0144] The portion of the second electrode 530A of each pixel corresponding to the light-transmitting portion AG of the second region CA can be removed by a laser patterning process. In the laser patterning process of the second electrode 530A, the second electrode 530A can be removed by using the first storage electrode 711 as a mask. For example, because of the presence of the second electrode 530A, a portion of the first storage electrode 711 is protected from the laser beam irradiating the display panel 900, and therefore this portion of the second electrode 530A cannot be removed from the laser beam; conversely, because of the absence of the second electrode 530A, a portion of the first storage electrode 711 is exposed to the laser beam, and therefore this portion of the second electrode 530A can be removed to form the light-transmitting portion AG.

[0145] The light-transmitting portion AG may include a portion that does not extend onto the embankment / spacer insulating film 160 because the second electrode 530A corresponding to the light-transmitting portion AG is removed. For example, the second electrode 530A of each sub-pixel may include a portion that is not connected to the second electrode 530A of adjacent pixels.

[0146] Figure 6 and Figure 7 A second region CA is shown in a display panel 900 in another embodiment according to aspects of this disclosure. Figure 6 and Figure 7 The first thin-film transistor 200, the second thin-film transistor 300, the storage capacitor 400, and the light-emitting element included in the first region DA of each display panel can be substantially equal to Figure 4 Those shown. Furthermore... Figure 6and Figure 7 The second thin-film transistor 300, light-emitting element 500, encapsulation portion 170, and dike / spacer insulating film 160 included in the second region CA of each display panel can be substantially equal to Figure 5 Those shown.

[0147] Reference Figure 6 The storage capacitor 720 includes a first storage electrode 721, a second storage electrode 722, and a third storage electrode 723. The first storage electrode 721 and the second storage electrode 722 can be substantially equal to... Figure 5 The first storage electrode 711 and the second storage electrode 712. Figure 6 The third storage electrode may be located on the second separation insulating film 130 and formed of an oxide semiconductor modified to serve as a conductive material. For example, the third storage electrode 723 may include an oxide semiconductor such as IGZO and may be modified to serve as a conductive material through a doping process.

[0148] Reference Figure 7 The storage capacitor 730 includes a first storage electrode 731 and a second storage electrode 732. The first storage electrode 731 can be substantially equal to... Figure 5 The second storage electrode 712, and the second storage electrode 732 can be substantially equal to Figure 6 The third storage electrode 723. Figure 7 The second storage electrode 732 may be located on the second separation insulating film 130 and formed of an oxide semiconductor modified to serve as a conductive material. For example, the second storage electrode 732 may include an oxide semiconductor such as IGZO and may be modified to serve as a conductive material by a doping process.

[0149] Reference Figure 7 The portion of the second electrode 530B corresponding to the light-transmitting portion AG of the second region CA can be removed using a laser patterning process. In the laser patterning process of the second electrode 530B, the second electrode 530B can be removed by using the first storage electrode 731 as a mask. For example, because of the presence of the second electrode 530B, a portion of the first storage electrode 731 is protected from the laser beam irradiating the display panel 900, and therefore this portion of the second electrode 530B cannot be removed from the laser beam; conversely, because of the absence of the second electrode 530B, a portion of the first storage electrode 731 is exposed to the laser beam, and therefore this portion of the second electrode 530B can be removed to form the light-transmitting portion AG.

[0150] The light-transmitting portion AG may include a portion that does not extend onto the embankment / spacer insulating film 160 because the second electrode 530B corresponding to the light-transmitting portion AG is removed. For example, the second electrode 530B of each sub-pixel may include a portion that is not connected to the second electrode 530B of adjacent pixels.

[0151] This disclosure also provides a display device including a display panel 900.

[0152] It should be noted that this disclosure also includes the following technical solutions:

[0153] Option 1. A display panel, comprising:

[0154] A first region consisting of multiple pixels is defined;

[0155] A second region is configured with multiple pixel groups; and

[0156] At least one light-transmitting portion, each light-transmitting portion being disposed between the plurality of pixel groups in the second region.

[0157] Each of the at least one light-transmitting portion includes:

[0158] A circular light-transmitting portion is arranged in a Z-shaped pattern in the second region along a first direction and a second direction intersecting the first direction.

[0159] Wherein, each of the plurality of pixel groups in the second region includes a second electrode, and

[0160] At least a portion of the second electrode is removed from the light-transmitting area of ​​the second region to form the at least one light-transmitting portion.

[0161] Solution 2. The display panel according to Solution 1, wherein each pixel of the plurality of pixels in the first region includes:

[0162] Light-emitting elements;

[0163] First thin-film transistor;

[0164] The second thin-film transistor; and

[0165] Capacitor.

[0166] Solution 3. The display panel according to Solution 1, wherein each pixel group in the plurality of pixel groups in the second region includes a plurality of pixels, and

[0167] Each of the plurality of pixel groups is disposed between two or more light-transmitting portions of the at least one light-transmitting portion, such that the two or more light-transmitting portions are spaced apart from each other, and each of the plurality of pixel groups includes one or two pixels, or three or four sub-pixels.

[0168] Solution 4. The display panel according to Solution 3, wherein each pixel in each of the plurality of pixels in each of the plurality of pixel groups includes:

[0169] A light-emitting element including the second electrode;

[0170] The second thin-film transistor; and

[0171] Capacitor.

[0172] Option 5. The display panel according to Option 2, wherein the semiconductor pattern of the first thin film transistor comprises low-temperature polycrystalline silicon (LTPS), and the semiconductor pattern of the second thin film transistor comprises oxide semiconductor.

[0173] Option 6. The display panel according to Option 4, wherein the semiconductor pattern of the second thin-film transistor includes an oxide semiconductor.

[0174] Solution 7. The display panel according to Solution 1, wherein each of the first region and the second region includes:

[0175] Thin-film transistors disposed above a substrate;

[0176] A capacitor including at least one capacitor electrode; and

[0177] A light-emitting device including the second electrode.

[0178] Solution 8. The display panel according to Solution 7, wherein the at least one light-transmitting portion is formed by removing at least a portion of the second electrode in the second region using the at least one capacitor electrode in the second region as a mask.

[0179] Solution 9. The display panel according to Solution 1, wherein the first area includes:

[0180] First thin-film transistor; and

[0181] The second thin-film transistor, and

[0182] The second region includes the second thin-film transistor.

[0183] Option 10. A method for manufacturing a display panel,

[0184] The display panel includes:

[0185] A display area, the display area including a first pixel area having a plurality of pixels; and

[0186] The imaging region includes a second pixel region having multiple pixel groups and at least one light-transmitting portion disposed between the multiple pixel groups.

[0187] The method includes:

[0188] A capacitor electrode is formed in the second pixel region of the imaging region; and

[0189] Using the capacitor electrode as a mask, at least a portion of the second electrode of the imaging area is removed by irradiating a laser beam to form the at least one light-transmitting portion.

[0190] Option 11. The method according to Option 10, wherein one or more thin-film transistors, a capacitor, and a light-emitting element are deposited over a substrate in the first pixel region, and one or more thin-film transistors, a capacitor including the capacitor electrode, and a light-emitting element including the second electrode are deposited over a substrate in the second pixel region.

[0191] Different types of thin-film transistors are disposed in the first pixel region, and a single type of thin-film transistor is disposed in the second pixel region.

[0192] Solution 12. The method according to Solution 11, wherein the different types of thin-film transistors in the first pixel region serve as a first thin-film transistor and a second thin-film transistor, and

[0193] The single-type thin-film transistor in the second pixel region is used as the second thin-film transistor.

[0194] Option 13. The method according to Option 12, wherein the first thin-film transistor comprises a low-temperature polycrystalline silicon (LTPS) semiconductor pattern, and the second thin-film transistor comprises an oxide semiconductor pattern.

[0195] Option 14. A display panel, comprising:

[0196] A first region consisting of multiple pixels is defined;

[0197] A second region having a plurality of pixel groups, the second region including at least one light-transmitting portion disposed between the plurality of pixel groups;

[0198] The at least one light-transmitting portion is located in a region in which at least a portion of the second electrode included in the plurality of pixel groups disposed in the second region has been removed, and in at least a portion of a region other than the region in which the capacitor electrode is disposed: the capacitor electrode is included in the plurality of pixel groups disposed in the second region.

[0199] Solution 15. The display panel according to Solution 14, wherein, in a region other than the region where the capacitor electrode is disposed in the second region, at least a portion of the second electrode disposed in the second region is removed.

[0200] Solution 16. The display panel according to Solution 14, wherein the second electrode disposed in the second region is located in a region overlapping with the capacitor electrode disposed in the second region.

[0201] Solution 17. The display panel according to Solution 14, wherein the capacitor electrode disposed in the second region is disposed in the same layer as the layer in which the gate electrode of the thin-film transistor is disposed: the thin-film transistor is disposed in the first region.

[0202] Solution 18. The display panel according to Solution 17, wherein the thin-film transistor disposed in the first region is disposed in a different layer than the layer in which the thin-film transistor is disposed: the thin-film transistor is disposed in the second region.

[0203] Scheme 19. A display device comprising a display panel according to any one of Schemes 1-9 and 14-18.

[0204] The discussion and accompanying drawings provided above are exemplary in nature and are not intended to limit the scope of this disclosure or its application. It should be noted that various modifications and variations to the described examples and embodiments, such as combinations, separations, substitutions, and alterations of configurations, will be apparent to those skilled in the art without departing from the scope of the embodiments and examples of this disclosure. Although exemplary embodiments have been described for illustrative purposes, those skilled in the art will understand that various modifications and applications are possible without departing from the essential characteristics of this disclosure. For example, various modifications may be made to specific portions of the exemplary embodiments. The scope of this disclosure should be interpreted according to the claims, and all technical ideas within the scope of the claims should be interpreted as being included within the scope of this invention.

Claims

1. A display panel, comprising: A first region consisting of multiple pixels is defined; A second region is configured with multiple pixel groups; as well as At least one light-transmitting portion, each light-transmitting portion being disposed between the plurality of pixel groups in the second region. Each of the at least one light-transmitting portion includes: A circular light-transmitting portion is arranged in a Z-shaped pattern in the second region along a first direction and a second direction intersecting the first direction. Wherein, each of the plurality of pixel groups in the second region includes a second electrode, and At least a portion of the second electrode is removed from the light-transmitting area of ​​the second region to form the at least one light-transmitting portion. Each of the first region and the second region includes: A capacitor including at least one capacitor electrode, and The at least one capacitor electrode disposed in the second region is disposed in the same layer as the layer in which the gate electrode of the first thin-film transistor is disposed in the first region.

2. The display panel according to claim 1, wherein, Each of the plurality of pixels in the first region includes: Light-emitting elements; The first thin-film transistor; The second thin-film transistor; and The capacitor.

3. The display panel according to claim 1, wherein, Each pixel group in the second region comprises a plurality of pixels, and Each of the plurality of pixel groups is disposed between two or more light-transmitting portions of the at least one light-transmitting portion, such that the two or more light-transmitting portions are spaced apart from each other, and each of the plurality of pixel groups includes one or two pixels, or three or four sub-pixels.

4. The display panel according to claim 3, wherein, Each pixel in each of the plurality of pixel groups includes: A light-emitting element including the second electrode; The second thin-film transistor; and The capacitor.

5. The display panel according to claim 2, wherein, The semiconductor pattern of the first thin-film transistor includes low-temperature polycrystalline silicon (LTPS), and the semiconductor pattern of the second thin-film transistor includes oxide semiconductor.

6. The display panel according to claim 4, wherein, The semiconductor pattern of the second thin-film transistor includes oxide semiconductor.

7. The display panel according to claim 1, wherein, Each of the first region and the second region further includes: A second thin-film transistor disposed above the substrate; and The light-emitting element includes the second electrode.

8. The display panel according to claim 7, wherein, The at least one light-transmitting portion is formed by removing at least a portion of the second electrode in the second region using the at least one capacitor electrode in the second region as a mask.

9. The display panel according to claim 1, wherein, The first region includes: The first thin-film transistor; and The second thin-film transistor, and The second region includes the second thin-film transistor.

10. A display panel, comprising: A first region consisting of multiple pixels is defined; A second region having a plurality of pixel groups, the second region including at least one light-transmitting portion disposed between the plurality of pixel groups; The at least one light-transmitting portion is located in a region where at least a portion of the second electrode included in the plurality of pixel groups disposed in the second region has been removed, and in at least a portion of a region other than the region where the capacitor electrode is disposed: the capacitor electrode is included in the plurality of pixel groups disposed in the second region, and The capacitor electrode disposed in the second region is disposed in the same layer as the layer in which the gate electrode of the thin-film transistor is disposed: the thin-film transistor is disposed in the first region.

11. The display panel according to claim 10, wherein, In regions other than the region where the capacitor electrodes are disposed in the second region, at least a portion of the second electrodes disposed in the second region is removed.

12. The display panel according to claim 10, wherein, The second electrode disposed in the second region is located in the region overlapping with the capacitor electrode disposed in the second region.

13. The display panel according to claim 10, wherein, The thin-film transistor disposed in the first region is disposed in a different layer than the layer in which the thin-film transistor is disposed: the thin-film transistor is disposed in the second region.

14. A display device comprising a display panel according to any one of claims 1-13.

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