一种半导体结构和存储电路
By designing a specific arrangement of semiconductor structures on the DRAM platform, including active regions, interconnect pads, and magnetic tunnel junctions, the problem of combining MRAM with DRAM was solved, enabling low-cost and high-efficiency MRAM production.
CN114639772BActive Publication Date: 2026-07-17CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2020-12-15
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The existing MRAM structure cannot be effectively integrated with DRAM manufacturing platforms, resulting in high production costs.
Method used
Semiconductor structures, including discrete first active regions, interconnect pads, magnetic tunnel junctions, and other components, are designed on DRAM fabrication platforms. By arranging these components at specific angles and in specific directions, the storage structure of MRAM is realized, simplifying the process of fabricating DRAM and MRAM on the same platform.
Benefits of technology
It reduced production costs and improved the production efficiency and ease of use of MRAM.
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Figure CN114639772B_ABST
Abstract
本申请提供了一种半导体结构和存储电路，基于DRAM制作平台实现了MRAM的存储结构，使得在同一平台上制作DRAM和MRAM变得更加简便，降低了生产成本。
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