磁存储装置
By introducing a ferromagnetic layer structure containing a 5d transition metal into the magnetic storage device, the problems of data instability and high write current caused by thermal interference are solved, and a storage cell with high heat resistance and low current requirement is realized, thereby improving storage efficiency and reliability.
CN114649470BActive Publication Date: 2026-07-17KIOXIA CORP +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KIOXIA CORP
- Filing Date
- 2021-07-30
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing magnetic storage devices suffer from insufficient data stability when exposed to thermal interference and have high write current requirements, which affect storage efficiency and reliability.
Method used
A ferromagnetic layer structure containing 5d transition metal is adopted. The design of ferromagnetic layers 44 and 45 improves the thermal interference resistance of the storage layer, and the diffusion of 5d transition metal atoms is suppressed by ferromagnetic layer 44, thereby reducing the write current requirement.
Benefits of technology
This achieves high tolerance of the storage cell to thermal interference, while reducing the write current requirement and improving the data stability and efficiency of the storage device.
✦ Generated by Eureka AI based on patent content.
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Figure CN114649470B_ABST
Abstract
本公开涉及磁存储装置。一个实施方式的磁存储装置具备：第1铁磁性层；第1铁磁性层的上方的绝缘层；绝缘层的上方的第2铁磁性层；第2铁磁性层的上方的、包含含有铁的合金的氧化物的第3铁磁性层；及第3铁磁性层的上方的、包含铁及5d过渡金属的第4铁磁性层。
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