A magnetic storage device and its data reading and writing method

Abstract

This invention discloses a magnetic storage device and a data read / write method, relating to the field of magnetic storage. The magnetic storage device includes a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode. The magnetic storage device has at least three ports, including a first port, a second port, and a third port. By adjusting the three ports of the storage unit of the magnetic storage device and inputting electrical signals through two of the ports, the magnetization direction of the reference layer is changed, and the changed direction corresponds to the direction of the input electrical signal. Thus, data bits can also be established on the reference layer, and data "0" or "1" can be stored based on the magnetization direction of the reference layer. This gives the reference layer the ability to record data. Therefore, each magnetic storage device can write more data bits than current magnetic storage devices, improving data storage density and possessing broader application prospects.

Description

Technical Field

[0001] This invention relates to the field of storage, specifically to a magnetic storage device and its data reading and writing method. Background Technology

[0002] With the rapid development of artificial intelligence, big data, and cloud computing industries, people are coming into contact with more and more intelligent products, and the demand for intelligent products is constantly increasing, which promotes the rapid development of the integrated circuit industry. The complexity of large-scale integrated circuits is getting higher and higher, and the overall power consumption is also getting higher and higher.

[0003] Magnetic tunnel junctions (MTJs) possess excellent characteristics such as high response speed, low power consumption, and long durability, making them a fundamental unit of magnetic random access memory (MRAM) and widely used. When applied to the storage field, their inherent data non-volatility effectively solves the problem of volatile memory experiencing additional power consumption due to repeated accesses caused by data loss.

[0004] However, because MTJ devices change the magnetization direction of the free layer, making the relative magnetization directions of the free layer and the reference layer the same or opposite, they can change the resistance state of the MTJ device and thus output data "0" or "1". In practical applications of MTJs, it has been found that because only the magnetization direction of the free layer changes during the process, while the magnetization direction of the reference layer remains unchanged, each device can only store one bit of "0" or "1". Therefore, the storage density is still lower than other memories, such as nonlinear flash memory (NAND-Flash). Summary of the Invention

[0005] This invention provides a magnetic storage device and a data reading and writing method thereof to improve the storage density of the magnetic storage device.

[0006] To address the aforementioned problems, a first aspect of the present invention provides a magnetic storage device.

[0007] The magnetic storage device includes:

[0008] The bottom electrode and the magnetic tunnel junction disposed on the bottom electrode;

[0009] The magnetic storage device is provided with at least three ports, including: a first port, a second port, and a third port;

[0010] The bottom electrode is also provided with a power interface, including: a first power interface and a second power interface, wherein the direction of the current flowing into the first power interface is opposite to the direction of the current flowing into the second power interface, the first power interface is connected to the second port, and the second power interface is connected to the third port.

[0011] The magnetic tunnel junction also includes a top electrode, which is disposed at the top of the magnetic tunnel junction and connected to the first port.

[0012] In some embodiments, the magnetic tunnel junction further includes a reference layer disposed above the bottom electrode and below the top electrode. The power-on interface is used to receive electrical signals input from the second port and the third port. In response to the power-on direction of the electrical signals, the magnetization direction of the reference layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction is opposite to the second magnetization direction.

[0013] In some embodiments, the energizing direction includes a first energizing direction and a second energizing direction, wherein the first energizing direction corresponds to the first magnetization direction of the reference layer, and the energizing direction corresponds to the magnetization direction of the second reference layer.

[0014] In some embodiments, either the first port or the bottom electrode port is used to input a write signal to the magnetic tunneling junction. The magnetic tunneling junction further includes a free layer disposed above the reference layer and below the top electrode. In response to the write signal, the magnetization direction of the free layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction and the second magnetization direction are opposite.

[0015] In response to the transition of the first direction of the free layer to the second direction of the free layer, the magnetic tunnel junction transitions from a first resistive state to a second resistive state.

[0016] The bottom electrode port includes a second port and a third port.

[0017] In some embodiments, the input channel corresponding to the electrical signal and the input channel corresponding to the write signal are independent of each other, and the signal input process does not affect each other.

[0018] The input channels corresponding to the electrical signals include: the input channels for the electrical signals corresponding to the second port and the third port;

[0019] The input channels corresponding to the write signal include: the first port and the third port, which are the input channels for the write signal.

[0020] In some embodiments, the magnetic tunnel junction further includes a top electrode connected in series with the read resistor, the top electrode being made of at least one or a combination of two or more of the following materials: aluminum, tantalum, gold, chromium, copper, molybdenum, tungsten, and platinum.

[0021] In some embodiments, the magnetic tunnel junction further includes: a free layer, a reference layer, and a barrier layer.

[0022] When the magnetization direction of the free layer is the same as that of the reference layer, the magnetic tunnel junction exhibits a low-resistance state; when the magnetization direction of the free layer is opposite to that of the reference layer, the magnetic tunnel junction exhibits a high-resistance state.

[0023] In some embodiments, the magnetic tunnel junction further includes a bottom electrode, which is made of at least one or a combination of two or more of the following materials: tantalum, aluminum, gold, chromium, copper, molybdenum, tungsten, and platinum.

[0024] In some embodiments, the material of the barrier layer includes at least one of the following compounds or a mixture of compounds, the compounds including: aluminum oxide (Al2O3) or magnesium oxide (MgO).

[0025] In some embodiments, the magnetic memory further includes a fourth port, wherein the first port and the fourth port are disposed on the top electrode, and the second port and the fourth port are disposed on the bottom electrode, wherein the first port and the fourth port constitute a top electrode channel for transmitting a top electrode electrical signal.

[0026] The magnetic tunnel junction is disposed between the top electrode and the bottom electrode. When the reference layer is adjacent to the top electrode, the magnetization direction of the reference layer changes from the first magnetization direction of the free layer to the second magnetization direction of the free layer in response to the electrical signal of the top electrode.

[0027] In another aspect of this application, a data read / write method is also proposed, characterized in that it is applied to a magnetic memory, the magnetic memory comprising: a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode; the magnetic memory is provided with at least three ports, including: a first port, a second port and a third port;

[0028] The method includes:

[0029] The electrical signals input from the second port and the third port are acquired. In response to the energizing direction of the electrical signals, the magnetization direction of the reference layer of the magnetic tunnel junction is changed from the first magnetization direction of the reference layer to the second magnetization direction of the reference layer.

[0030] In response to the first magnetization direction of the reference layer changing to the second magnetization direction of the reference layer, the data bit content stored in the corresponding reference layer changes from "0" to "1" or from "1" to "0".

[0031] The write signal input from the first port to any bottom electrode port is acquired, wherein the bottom electrode ports include a second port and a third port.

[0032] In response to the write signal, the magnetization direction of the free layer of the magnetic tunnel junction changes from the first magnetization direction of the free layer to the second magnetization direction of the free layer;

[0033] In response to the change of the first direction of the free layer to the second direction of the free layer, the magnetic tunnel junction changes from the first resistive state to the second resistive state. In response to the change of the magnetic tunnel junction from the first resistive state to the second resistive state, the data bit content stored in the corresponding free layer changes from "0" to "1" or from "1" to "0".

[0034] In some embodiments, the method further includes:

[0035] A current is passed through the magnetic tunnel junction, and the resistance state of the magnetic tunnel junction is obtained, thereby obtaining the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer. The relative state includes: the magnetization direction of the free layer is parallel to the magnetization direction of the reference layer and the magnetization direction of the free layer is parallel to the magnetization direction of the reference layer in the same direction;

[0036] If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, an initialization operation is performed on the reference layer by passing an electrical signal with a known current direction.

[0037] Obtain the resistance state of the magnetic tunnel junction after the initialization operation, and use this to obtain the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer after the initialization operation;

[0038] Obtain the magnetization direction of the free layer, and based on the magnetization direction of the free layer, obtain the data bit content stored in the corresponding free layer and the corresponding data bit content stored in the reference layer;

[0039] If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, before the initialization operation, the write signal is passed to the free layer to adjust the magnetization direction of the free layer to be parallel to the magnetization direction of the reference layer, so that the data bit content stored in the reference layer is transferred to the free layer.

[0040] In some embodiments, the electrical signal energizing direction includes: a first energizing direction and a second energizing direction, wherein the first energizing direction is opposite to the second energizing direction;

[0041] The first magnetization direction of the reference layer is opposite to the second magnetization direction of the reference layer. The first magnetization direction corresponds to the first current-carrying direction, and the second magnetization direction corresponds to the second current-carrying direction.

[0042] In some embodiments, the magnetic tunnel junction resistive state includes a first resistive state and a second resistive state.

[0043] In some embodiments, the magnetic tunneling membrane structure may be constructed by sputtering.

[0044] Embodiments of the present invention provide a magnetic storage device and its data read / write method. By adjusting three ports of the storage unit of the magnetic storage device and inputting an electrical signal to the bottom electrode through the bottom electrode port, the magnetization direction of the reference layer is changed, and the changed direction corresponds to the direction of the input electrical signal. Thus, data bits can also be established in the reference layer, and data "0" or "1" can be stored based on the magnetization direction of the reference layer. Simultaneously, the free layer can also change its magnetization direction through a channel formed by the port connected to the top electrode and any port of the bottom electrode, thereby achieving attitude reversal of the magnetic tunnel junction and recording the data bit information corresponding to the corresponding resistance state. Because the structure allows the reference layer to also have the ability to record data compared to existing technologies, each magnetic storage device can write more data bits, improving data storage density. Similarly, by initializing the reference layer magnetization direction of the magnetic storage device and combining it with corresponding resistance state analysis, integrated data read / write functionality can also be achieved. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application.

[0046] Figure 1 This is a schematic diagram of a three-terminal magnetic tunnel junction structure of a magnetic memory according to an embodiment of the present invention;

[0047] Figure 2a This is a schematic diagram of a magnetic memory reference layer data writing channel according to an embodiment of the present invention;

[0048] Figure 2b This is a schematic diagram of a free layer write channel of a magnetic memory according to an embodiment of the present invention;

[0049] Figure 3 This is a schematic diagram of the external circuit structure of a magnetic storage device according to an embodiment of the present invention;

[0050] Figure 4 This is a schematic diagram of a magnetic storage data reading process according to an embodiment of the present invention;

[0051] Figure 5 This is a schematic diagram of a read-only magnetic storage structure according to an embodiment of the present invention;

[0052] Figure 6a This is a schematic diagram of a four-port read-only magnetic storage structure according to an embodiment of the present invention;

[0053] Figure 6b This is a schematic diagram of the external circuit structure of a four-port read-only magnetic storage device according to an embodiment of the present invention. Detailed Implementation

[0054] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0055] Those skilled in the art will understand that the terms "first," "second," etc., in this application are only used to distinguish different devices, modules, or parameters, and do not represent any specific technical meaning, nor do they indicate any necessary logical order between them.

[0056] With the rapid development of artificial intelligence, big data, and cloud computing industries, people are coming into contact with more and more intelligent products, and the demand for intelligent products is constantly increasing, which promotes the rapid development of the integrated circuit industry. The complexity of large-scale integrated circuits is getting higher and higher, and the overall power consumption is also getting higher and higher.

[0057] Magnetic tunnel junctions (MTJs) possess excellent characteristics such as high response speed, low power consumption, and long durability, making them a fundamental unit of magnetic random access memory (MRAM) and widely used. When applied to the storage field, their inherent data non-volatility effectively solves the problem of volatile memory experiencing additional power consumption due to repeated accesses caused by data loss.

[0058] However, because MTJ devices change the magnetization direction of the free layer, making the relative magnetization directions of the free layer and the reference layer the same or opposite, they can change the resistance state of the MTJ device and thus output data "0" or "1". In practical applications of MTJs, it has been found that because only the magnetization direction of the free layer changes during the process, while the magnetization direction of the reference layer remains unchanged, each device can only store one bit of "0" or "1". Therefore, the storage density is still lower than other memories, such as nonlinear flash memory (NAND-Flash).

[0059] In one embodiment of this application, a magnetic storage device is proposed, wherein the core component structure of the magnetic storage device is as follows: Figure 1 As shown, the magnetic storage device includes:

[0060] The bottom electrode and the magnetic tunnel junction disposed on the bottom electrode;

[0061] The magnetic storage device is provided with at least three ports, including: a first port, a second port, and a third port;

[0062] The bottom electrode is also provided with a power interface, including: a first power interface and a second power interface, wherein the direction of the current flowing into the first power interface is opposite to the direction of the current flowing into the second power interface, the first power interface is connected to the second port, and the second power interface is connected to the third port.

[0063] The magnetic tunnel junction also includes a top electrode, which is disposed at the top of the magnetic tunnel junction and connected to the first port.

[0064] Typically, a magnetic tunnel junction structure consists of a free layer, a reference layer, a barrier layer, and a bottom electrode. It usually has two ports: a bottom electrode input port for connecting input signals (equivalent to the first port) and a ground port (equivalent to the third port). The magnetization direction of the reference layer usually does not change during use.

[0065] Optionally, the magnetic tunnel junction further includes a reference layer disposed above the bottom electrode and below the top electrode. The power interface is used to receive electrical signals input from the second port and the third port. In response to the power-on direction of the electrical signals, the magnetization direction of the reference layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction is opposite to the second magnetization direction.

[0066] Optionally, the energizing direction includes a first energizing direction and a second energizing direction, wherein the first energizing direction corresponds to the first magnetization direction of the reference layer, and the energizing direction corresponds to the second magnetization direction of the reference layer.

[0067] In some possible implementations, a third port (equivalent to the second port) is added to the bottom electrode of the magnetic tunnel junction, and two energizing interfaces are provided on the bottom electrode. These energizing interfaces are connected to the two ports (the second port and the third port) located on the bottom electrode, respectively, and allow the transmission of desired electrical signals. Through the channel formed by the energizing interfaces and ports on the bottom electrode, the transmitted electrical signal, due to spin coupling, can influence the magnetization direction of the reference layer near the bottom electrode through its own current direction, and may even change the magnetization direction of the reference layer. For example, as... Figure 2a As shown, when a positive current signal is supplied to the bottom electrode through the second and third ports (equivalent to the first energizing direction), the bottom electrode adjusts the magnetization direction of the reference layer to the corresponding magnetization direction (equivalent to the first magnetization direction) in response to the current direction of the signal. Similarly, when a negative current signal is supplied to the bottom electrode through the second and third ports (equivalent to the second energizing direction), the bottom electrode adjusts the magnetization direction of the reference layer to the corresponding magnetization direction (equivalent to the second magnetization direction) in response to the current direction of the signal. In this way, by establishing a connection between the magnetization direction of the reference layer and the direction of the supplied signal, and by adding preset information (e.g., defining the first magnetization direction corresponding to the first energizing direction as "1" and the second magnetization direction corresponding to the second energizing direction as "0"), corresponding data bits can be established in the reference layer for data writing. Furthermore, the increased number of data bits improves the storage density of the magnetic memory.

[0068] Optionally, either the first port or the bottom electrode port is used to input a write signal to the magnetic tunnel junction. The magnetic tunnel junction further includes a free layer disposed above the reference layer and below the top electrode. In response to the write signal, the magnetization direction of the free layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction and the second magnetization direction are opposite.

[0069] In response to the transition of the first direction of the free layer to the second direction of the free layer, the magnetic tunnel junction transitions from a first resistive state to a second resistive state.

[0070] The bottom electrode port includes a second port and a third port.

[0071] In some possible implementations, exemplary, such as Figure 2bAs shown, the magnetic tunnel junction (MTJ) forms a channel with either the first port connected to the top electrode or either the second or third port of the bottom electrode. This channel is used to input a write signal into the MTJ. The write signal can also be an electrical signal. In response to the write signal, when the magnitude and direction of the write signal meet predetermined requirements (i.e., triggering a magnetic field transition condition), the magnetization direction of the free layer of the MTJ changes from the first magnetization direction to the second magnetization direction. Since the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer determines the resistance state of the MTJ, for example, when the magnetization direction of the free layer and the magnetic field of the reference layer are parallel to each other, the corresponding MTJ exhibits a low resistance state; when the magnetization direction of the free layer and the magnetization direction of the reference layer are parallel to each other, the corresponding MTJ exhibits a high resistance state. The high resistance state and the low resistance state can correspond to the first resistance state and the second resistance state, respectively. In this way, the channel formed by either the first port or the bottom electrode can cause the magnetization direction of the free layer to be reversed, inducing the magnetic tunnel junction resistance state to be reversed. By making preset information notes for the two resistance states (for example, the high resistance state is defined as "1" and the low resistance state is defined as "0"), it is possible to establish corresponding data bits in the magnetic tunnel junction resistance state for data writing.

[0072] In some possible implementations, the input channel corresponding to the electrical signal and the input channel corresponding to the write signal are independent of each other, and the signal input process does not affect each other.

[0073] The input channels corresponding to the electrical signals include: the input channels for the electrical signals corresponding to the second port and the third port;

[0074] The input channels corresponding to the write signal include: the first port and the third port, which are the input channels for the write signal.

[0075] In some possible implementations, exemplary, such as Figure 3 As shown, the magnetic storage device can also be controlled via external bit lines and word lines.

[0076] In some possible implementations, the magnetic tunnel junction further includes a top electrode connected in series with the read resistor, the top electrode being made of at least one or a combination of two or more of the following materials: aluminum, tantalum, gold, chromium, copper, molybdenum, tungsten, and platinum.

[0077] In some possible implementations, the magnetic tunnel junction further includes a bottom electrode, which is made of at least one or a combination of two or more of the following materials: tantalum, aluminum, gold, chromium, copper, molybdenum, tungsten, and platinum.

[0078] In some possible implementations, the magnetic tunnel junction further includes a free layer, a reference layer, and a barrier layer, wherein the barrier layer is made of at least one of the following compounds or a mixture of compounds, including aluminum oxide (Al2O3) or magnesium oxide (MgO).

[0079] In another embodiment of this application, a data read / write method is also proposed, applied to a magnetic memory, the magnetic memory comprising: a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode; the magnetic memory is provided with at least three ports, including: a first port, a second port and a third port;

[0080] The writing method in the method specifically includes:

[0081] The magnetic tunnel junction acquires electrical signals input from the second port and the third port. In response to the current-carrying direction of the electrical signals, the magnetization direction of the reference layer of the magnetic tunnel junction changes from the first magnetization direction of the reference layer to the second magnetization direction of the reference layer, so that the magnetization direction of the reference layer corresponds to the current-carrying direction.

[0082] In response to the first magnetization direction of the reference layer changing to the second magnetization direction of the reference layer, the data bit content stored in the corresponding reference layer changes from "0" to "1" or from "1" to "0".

[0083] Obtain the write signal input from any bottom electrode port of the first port (either the second port or the third port).

[0084] In response to the write signal, the magnetization direction of the free layer of the magnetic tunnel junction changes from the first magnetization direction of the free layer to the second magnetization direction of the free layer;

[0085] In response to the change of the first direction of the free layer to the second direction of the free layer, the magnetic tunnel junction changes from the first resistive state to the second resistive state. Thus, in response to the change of the magnetic tunnel junction from the first resistive state to the second resistive state, the data bit content stored in the corresponding free layer changes from "0" to "1" or from "1" to "0".

[0086] In some possible implementations, the method further includes a reading method, exemplarily, such as... Figure 4 As shown, the reading method includes:

[0087] A current is passed through the magnetic tunnel junction, and the resistance state of the magnetic tunnel junction is obtained, thereby obtaining the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer. The relative state includes: the magnetization direction of the free layer is parallel to the magnetization direction of the reference layer and the magnetization direction of the free layer is parallel to the magnetization direction of the reference layer in the same direction;

[0088] If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, an initialization operation is performed on the reference layer by passing an electrical signal with a known current direction. For example, an electrical signal with a positive current direction is passed to the reference layer. In this way, the magnetization direction of the reference layer becomes the magnetization direction corresponding to the electrical signal with the positive current direction.

[0089] The resistance state of the magnetic tunnel junction after the initialization operation is obtained, and the relative state of the magnetization direction of the free layer and the magnetization direction of the reference layer after the initialization operation is obtained. When the magnetic tunnel junction exhibits a high resistance state, it is obvious that the magnetization direction of the free layer and the magnetization direction of the reference layer are opposite and parallel. When the magnetic tunnel junction exhibits a low resistance state, it is obvious that the magnetization direction of the free layer and the magnetization direction of the reference layer are in the same direction and parallel. Combining the confirmation of the magnetization direction of the reference layer in the above steps, the magnetization direction of the free layer can be deduced from the resistance state.

[0090] The magnetization direction of the free layer is obtained, and the data bit content corresponding to the free layer (the absolute direction information of the free layer is obtained here, not the high and low resistance state information of the corresponding magnetic tunnel junction) and the corresponding data bit content stored in the reference layer are obtained based on the magnetization direction of the free layer. When the absolute information of the free layer (i.e. the magnetization direction of the free layer) is obtained, the magnetization direction of the reference layer can be deduced by combining the resistance state information of the magnetic tunnel junction before power is applied. In this way, the absolute information of the reference layer and the free layer, as well as the resistance state information of the magnetic tunnel junction, are read from the magnetic memory.

[0091] If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, before the initialization operation, the write signal is applied to the free layer to adjust its magnetization direction to be parallel to the magnetization direction of the reference layer. This causes the data bits stored in the reference layer to be transferred to the free layer. After initializing the reference layer, the magnetization direction of the reference layer before initialization can be obtained based on the resistance state of the magnetic tunnel junction after initialization. Then, based on the resistance state of the magnetic tunnel junction before power-on, the magnetization direction of the free layer before power-on (i.e., the absolute information of the free layer) can be obtained. Clearly, this also enables the reading of the absolute information of the reference layer and the free layer, as well as the resistance state information of the magnetic tunnel junction in the magnetic memory.

[0092] Optionally, before the magnetic storage device leaves the factory, some hidden information can be written into the reference layer by utilizing the properties of the reference layer, and then read out with one click in special scenarios;

[0093] For example, a magnetic memory has five magnetic tunnel junctions. The magnetization direction data corresponding to the positive current of the magnetic tunnel junction reference layer is represented as "1", and the magnetization direction data corresponding to the negative current is represented as "0". Assuming that the reference layer data "00100" in the magnetic memory indicates a reset operation, the data "00100" corresponding to the reference layer can be stored in a pre-set storage unit (external chip or other storage medium) before the magnetic memory leaves the factory. When the magnetic memory is in a scenario that requires a reset operation, the magnetic memory can directly call the instructions of the pre-set storage unit to obtain the data information corresponding to the reference layer and realize the adjustment of the corresponding data bits.

[0094] For example, since the information stored in the reference layer has been transferred to the free layer before the aforementioned reset operation is performed on the reference layer, no additional storage medium is needed to store the data information stored in the reference layer before the reset operation during the reference layer reset operation.

[0095] In some possible implementations, the electrical signal energizing direction includes: a first energizing direction (positive or negative energizing) and a second energizing direction (negative or positive energizing), wherein the first energizing direction is opposite to the second energizing direction;

[0096] The first magnetization direction of the reference layer is opposite to the second magnetization direction of the reference layer. The first magnetization direction corresponds to the first current-carrying direction, and the second magnetization direction corresponds to the second current-carrying direction.

[0097] In some possible implementations, the magnetic tunnel junction resistive states include: a first resistive state (high-resistance state or low-resistance state) and a second resistive state (low-resistance state or high-resistance state).

[0098] In some possible implementations, a read-only magnetic storage structure is also provided, exemplarily, such as... Figure 5 As shown, the reference layer is disposed below the top electrode, and the free layer is disposed above the bottom electrode. The second port and the third port are disposed at both ends of the top electrode as top electrode ports. The second port and the third port are used to change the magnetization direction of the reference layer. The first port is connected to any one of the second port and the third port, and the channel formed is used to change the magnetization direction of the free layer. The signal channel for changing the magnetization direction of the reference layer and the signal channel for changing the magnetization direction of the free layer are independent of each other and do not affect each other. The data reading and writing method is similar to the above embodiment, and will not be described in detail here.

[0099] In some possible implementations, a four-port read-only magnetic memory is also provided, exemplarily, such as... Figure 6aAs shown, the top electrode and the bottom electrode are each connected to two ports. The top electrode is connected to the first port and the fourth port, and the bottom electrode is connected to the third port and the second port. The first port and the fourth port are used to change the direction of the magnetic field of the reference layer. The magnetization direction of the free layer can be changed by inputting an electrical signal into the channel formed by any one of the top electrode ports (either the first port or the fourth port) and any one of the bottom electrode ports (either the third port or the second port), or by inputting an electrical signal into the channel formed by the bottom electrode port. The channels formed are independent of each other and do not affect each other. The data reading and writing method is similar to the above embodiment, and will not be described in detail here.

[0100] In some possible implementations, the four-port read-only magnetic memory can also be further controlled via external bit lines and word lines, for example, such as... Figure 6b As shown.

[0101] In some possible implementations, the magnetic tunneling membrane structure may be constructed by sputtering.

[0102] Embodiments of the present invention provide a magnetic storage device and its data read / write method. By adjusting three ports of the storage unit of the magnetic storage device and inputting an electrical signal to the bottom electrode through the bottom electrode port, the magnetization direction of the reference layer is changed, and the changed direction corresponds to the direction of the input electrical signal. Thus, data bits can also be established in the reference layer, and data "0" or "1" can be stored based on the magnetization direction of the reference layer. Simultaneously, the free layer can also change its magnetization direction through a channel formed by the port connected to the top electrode and any port of the bottom electrode, thereby achieving attitude reversal of the magnetic tunnel junction and recording the data bit information corresponding to the corresponding resistance state. Because the structure allows the reference layer to also have the ability to record data compared to existing technologies, each magnetic storage device can write more data bits, improving data storage density. Similarly, by initializing the reference layer magnetization direction of the magnetic storage device and combining it with corresponding resistance state analysis, integrated data read / write functionality can also be achieved.

[0103] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A magnetic storage device, characterized in that, The magnetic storage device includes: a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode; The magnetic storage device is provided with at least three ports, including: a first port, a second port, and a third port; The second port and the third port are bottom electrode ports. The bottom electrode is also provided with a power interface, including: a first power interface and a second power interface. The direction of the current flowing into the first power interface is opposite to the direction of the current flowing into the second power interface. The first power interface is connected to the second port, and the second power interface is connected to the third port. The magnetic tunnel junction also includes a top electrode, which is disposed at the top of the magnetic tunnel junction and connected to the first port. The magnetic tunnel junction further includes a reference layer disposed above the bottom electrode and below the top electrode, adjacent to the bottom electrode. The power interface is used to receive electrical signals input from the second port and the third port. In response to the direction of the electrical signal, the magnetization direction of the reference layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction and the second magnetization direction are opposite. The energizing direction includes a first energizing direction and a second energizing direction, wherein the first energizing direction corresponds to the first magnetization direction of the reference layer, and the second energizing direction corresponds to the second magnetization direction of the reference layer.

2. The magnetic memory of claim 1 wherein, Either the first port or the bottom electrode port is used to input a write signal to the magnetic tunnel junction. The magnetic tunnel junction further includes a free layer disposed above the reference layer and below the top electrode. In response to the write signal, the magnetization direction of the free layer changes from a first magnetization direction to a second magnetization direction, wherein the first magnetization direction and the second magnetization direction are opposite. In response to the change of the first magnetization direction of the free layer to the second magnetization direction of the free layer, the magnetic tunnel junction changes from the first resistive state to the second resistive state.

3. The magnetic memory of claim 2 wherein, The input channel corresponding to the electrical signal and the input channel corresponding to the write signal are independent of each other, and the signal input process does not affect each other. The input channels corresponding to the electrical signals include: the input channels for the electrical signals corresponding to the second port and the third port; The input channels corresponding to the write signal include: the first port and the second port or the third port corresponding to the write signal input channels.

4. A magnetic memory, comprising: The magnetic storage device includes: a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode; The magnetic storage device is provided with four ports, including: a first port, a second port, a third port, and a fourth port; The second port and the third port are bottom electrode ports; The magnetic tunnel junction also includes a top electrode, which is disposed at the top of the magnetic tunnel junction. The top electrode is connected to the first port and the fourth port, and the first port and the fourth port form a top electrode channel for transmitting a top electrode electrical signal. The magnetic tunnel junction further includes a reference layer disposed above the bottom electrode and below the top electrode, adjacent to the top electrode. The magnetization direction of the reference layer changes from a first magnetization direction to a second magnetization direction in response to the current-carrying direction of the electrical signal from the top electrode. The first magnetization direction and the second magnetization direction of the reference layer are opposite. The energizing direction includes a first energizing direction and a second energizing direction, wherein the first energizing direction corresponds to the first magnetization direction of the reference layer, and the second energizing direction corresponds to the second magnetization direction of the reference layer.

5. A data read / write method, characterized by, The magnetic memory is applied to a magnetic storage device, which includes a bottom electrode and a magnetic tunnel junction disposed on the bottom electrode; the magnetic storage device is provided with at least three ports, including a first port, a second port and a third port; The method includes: The electrical signals input from the second port and the third port are acquired. In response to the energizing direction of the electrical signals, the magnetization direction of the reference layer of the magnetic tunnel junction is changed from the first magnetization direction of the reference layer to the second magnetization direction of the reference layer. In response to the first magnetization direction of the reference layer changing to the second magnetization direction of the reference layer, the data bit content stored in the corresponding reference layer changes from "0" to "1" or from "1" to "0". The write signal input from the first port to any bottom electrode port is acquired, wherein the bottom electrode ports include a second port and a third port. In response to the write signal, the magnetization direction of the free layer of the magnetic tunnel junction changes from the first magnetization direction of the free layer to the second magnetization direction of the free layer; In response to the change of the first direction of the free layer to the second direction of the free layer, the magnetic tunnel junction changes from the first resistive state to the second resistive state. In response to the change of the magnetic tunnel junction from the first resistive state to the second resistive state, the data bit content stored in the corresponding free layer changes from "0" to "1" or from "1" to "0".

6. The data read / write method of claim 5, wherein, The method further includes: A current is passed through the magnetic tunnel junction, and the resistance state of the magnetic tunnel junction is obtained, thereby obtaining the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer. The relative state includes: the magnetization direction of the free layer and the magnetization direction of the reference layer are parallel in the same direction and the magnetization direction of the free layer and the magnetization direction of the reference layer are parallel in opposite directions. If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, an initialization operation is performed on the reference layer by passing an electrical signal with a known current direction. Obtain the resistance state of the magnetic tunnel junction after the initialization operation, and use this to obtain the relative state between the magnetization direction of the free layer and the magnetization direction of the reference layer after the initialization operation; Obtain the magnetization direction of the free layer, and based on the magnetization direction of the free layer, obtain the data bit content stored in the corresponding free layer and the corresponding data bit content stored in the reference layer; If the magnetization direction of the reference layer is parallel to the magnetization direction of the free layer, before the initialization operation, the write signal is passed to the free layer to adjust the magnetization direction of the free layer to be parallel to the magnetization direction of the reference layer, so that the data bit content stored in the reference layer is transferred to the free layer.

7. The data read / write method according to claim 5, characterized in that, The electrical signal energizing direction includes: a first energizing direction and a second energizing direction, wherein the first energizing direction is opposite to the second energizing direction; The first magnetization direction of the reference layer is opposite to the second magnetization direction of the reference layer, the first magnetization direction of the reference layer corresponds to the first current-carrying direction, and the second magnetization direction of the reference layer corresponds to the second current-carrying direction.

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