Substrate processing system and particle removal method

Abstract

A substrate processing system and a particle removal method are provided, in which a cooling mechanism is not provided in a housing chamber that is set as a removal target of particles, and a cause element of the particles is removed from the housing chamber. The particle removal operation includes the following steps: (a) cooling at least one substrate dummy placed on at least one substrate cooling stage to a first temperature, the first temperature being 5°C to 20°C; and (b) maintaining at least one end effector at any one of a plurality of positions in a vacuum transfer module or a substrate processing module for a first period of time in a state in which the at least one substrate dummy after being cooled is placed on the at least one end effector, the first period of time being 30 seconds or more.

Description

Technical Field

[0001] The following disclosure relates to a substrate processing system and a particulate removal method. Background Technology

[0002] Patent document 1 discloses the following technology: a protective member with a built-in Peltier element or other cooling adsorption part is arranged in such a way as to cover the upper surface of the stage in the chamber, and while the cooling adsorption part is used to cool the protective member, a vacuum is drawn to capture particles.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-103443 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for removing particles from a containment chamber without installing a cooling mechanism in the containment chamber, which is designated as the object of particle removal.

[0008] Solution for solving the problem

[0009] One aspect of the substrate processing system disclosed herein includes a vacuum transfer module, a substrate processing module, a loading interlock module, a substrate cooling stage, a substrate transfer robot, and a control unit. The substrate processing module is configured to be connected to the vacuum transfer module and process the substrate under reduced pressure. The loading interlock module is connected to the vacuum transfer module. At least one substrate cooling stage is disposed within the loading interlock module. At least one substrate transfer robot is disposed within the vacuum transfer module and includes at least one end effector. The control unit is configured to control a particulate removal operation. The particulate removal operation includes the following steps: step (a) cooling at least one substrate stub placed on at least one substrate cooling stage to a first temperature, the first temperature being 5°C to 20°C; and step (b) with the cooled substrate stub placed on at least one end effector, maintaining at least one end effector at any one of multiple positions within the vacuum transfer module or the substrate processing module for a first period, the first period being 30 seconds or more.

[0010] The effects of the invention

[0011] According to this disclosure, the following effect is achieved: it enables the removal of particles from the containment chamber without the need to install a cooling mechanism in the containment chamber that is designated as the object of particle removal. Attached Figure Description

[0012] Figure 1This is a diagram showing the outline structure of the substrate processing system according to the embodiment.

[0013] Figure 2 This is a diagram illustrating the outline structure of the load interlock module LLM involved in the implementation.

[0014] Figure 3 This is a flowchart illustrating the process of the particulate removal method according to the embodiment.

[0015] Figure 4 This is a diagram illustrating the process of particle removal involved in the implementation method.

[0016] Figure 5 This is a flowchart illustrating the cooling and conveying process involved in the embodiment.

[0017] Figure 6A This is a diagram illustrating the process of transporting the substrate W in the cooling transport process according to the embodiment.

[0018] Figure 6B This is a diagram illustrating the process of transporting the substrate W in the cooling transport process according to the embodiment.

[0019] Figure 6C This is a diagram illustrating the process of transporting the substrate W in the cooling transport process according to the embodiment.

[0020] Figure 6D This is a diagram illustrating the process of transporting the substrate W in the cooling transport process according to the embodiment.

[0021] Figure 7A This is a diagram illustrating an example of the removal results of the causal factors of particulate matter.

[0022] Figure 7B This is a diagram illustrating an example of the removal results of the causal factors of particulate matter.

[0023] Figure 8A This is a diagram illustrating an example of the removal results of the causal factors of particulate matter.

[0024] Figure 8B This is a diagram illustrating an example of the removal results of the causal factors of particulate matter.

[0025] Figure 9 This is a diagram illustrating an example of the removal results of the causal factors of particulate matter.

[0026] Figure 10 This is a diagram showing the outline structure of the process module PM involved in the implementation method. Detailed Implementation

[0027] The embodiments of the substrate processing system and particle removal method disclosed in this application will now be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments are not intended to limit the disclosed substrate processing system and particle removal method.

[0028] Furthermore, the substrate processing system includes a process module for performing substrate processing and a vacuum transfer chamber for transporting substrates to the process module, both of which are housed in a predetermined depressurization state during substrate processing. When the substrate processing system opens the process module, vacuum transfer chamber, or other housed chambers to the atmosphere for maintenance or other reasons, moisture from the atmosphere may adhere to the inner walls of the housed chambers. Even after evacuating the housed chambers, moisture remains, resulting in particulate matter on the substrate. Therefore, it is considered to place a protective member with a built-in cooling adsorption unit within the loading stage of the process module, as in Patent Document 1, or to integrate the cooling adsorption unit into the loading stage, cooling the loading stage to capture moisture and other factors that cause particulate matter, thereby removing the particulate matter. However, this requires a cooling mechanism to be installed in the housed chamber, which is the target for particulate matter removal, making the structure complex.

[0029] Therefore, a technology is desired that removes particles from the containment chamber without setting up a cooling mechanism in the containment chamber, which is intended to remove particles.

[0030] (Implementation Method)

[0031] (Substrate Processing System 1)

[0032] Next, the implementation method will be described. Figure 1 This is a diagram showing the general structure of the substrate processing system 1 according to the embodiment. The substrate processing system 1 includes multiple vacuum processing chambers (hereinafter also referred to as "process modules") PM1 to PM8, a vacuum transfer chamber 10, and an atmospheric pressure transfer chamber 20. In addition, the substrate processing system 1 also includes multiple loading interlock modules LLM1 to LLM2, multiple loading ports LP1 to LP5, and a control device 30.

[0033] In addition, Figure 1 In the example shown, eight process modules PM1 to PM8, two load interlock modules LLM1 to LLM2, and five load ports LP1 to LP5 are illustrated. However, the number of process modules PM, load interlock modules LLM, and load ports LP included in the substrate processing system 1 is not limited to the number shown. Hereinafter, without special distinction, the eight process modules PM1 to PM8 will be collectively referred to as process module PM. Similarly, the two load interlock modules LLM1 to LLM2 will be collectively referred to as load interlock modules LLM. Likewise, the five load ports LP1 to LP5 will be collectively referred to as load ports LP. Furthermore, the substrate processing system 1 according to this embodiment includes at least two load interlock modules LLM.

[0034] The process module PM can be hermetically sealed, and its interior is kept under reduced pressure by venting air through an exhaust mechanism. In a reduced-pressure atmosphere suitable for substrate processing, the process module PM performs substrate processing such as etching and film deposition on a substrate W, for example, a semiconductor wafer. Each process module PM has a mounting stage 51 inside to support the substrate W. During substrate processing, a reduced-pressure atmosphere is maintained inside the process module PM. The process module PM is connected to the vacuum transfer chamber 10 via an openable / closeable gate valve GV.

[0035] The vacuum transfer chamber 10 can be constructed airtight, and its interior is depressurized by venting the interior using an exhaust mechanism. In this depressurized atmosphere, the vacuum transfer chamber 10 performs the transfer of the substrate W. For example, a first transfer mechanism 15 for transferring the substrate W is disposed inside the vacuum transfer chamber 10. The first transfer mechanism 15 has a retractable robotic arm. At least one first transfer mechanism 15 is disposed within the vacuum transfer chamber 10, and it includes at least one end effector. The first transfer mechanism 15 according to this embodiment has a first arm 15a and a second arm 15b capable of operating independently. The first arm 15a and the second arm 15b each have a generally U-shaped pick at their tips, respectively configured to hold the substrate W. In this embodiment, the first transfer mechanism 15 corresponds to the substrate transfer robot of this disclosure. Furthermore, the picks of the first arm 15a and the second arm 15b correspond to the end effector, the first end effector, and the second end effector of this disclosure. The first conveying mechanism 15 extends and retracts the robotic arm to transport the substrate W between process modules PM1-PM8 and loading interlock modules LLM1 and LLM2. The substrate W is conveyed to each process module PM via the vacuum conveying chamber 10. The substrate W processed in the process module PM can be conveyed to the next process module PM for processing via the vacuum conveying chamber 10. The substrate W that has completed all processing is conveyed to the loading interlock module LLM via the vacuum conveying chamber 10.

[0036] The loading interlock module LLM can be hermetically constructed, utilizing an exhaust mechanism to switch its internal atmosphere between atmospheric and reduced pressure. The loading interlock module LLM is arranged along the side of the vacuum transfer chamber 10 where the process module PM is not located. The loading interlock module LLM and the vacuum transfer chamber 10 are configured to be internally connected via a gate valve GV. The side of the loading interlock module LLM opposite to the side connected to the vacuum transfer chamber 10 is connected to the atmospheric pressure transfer chamber 20. The loading interlock module LLM and the atmospheric pressure transfer chamber 20 are configured to be internally connected via gate valve GV.

[0037] Figure 2This diagram illustrates the general structure of the load interlock module LLM according to the embodiment. A mounting stage 61 for placing a substrate W is provided inside the load interlock module LLM. A support pin 62 and a cooling section 63 are provided on the mounting stage 61. The support pin 62 is designed to be movable, allowing the substrate W to move up and down relative to the mounting stage 61. The cooling section 63 is a flow path 63a formed inside the mounting stage 61. The cooling section 63 cools the mounting stage 61 by circulating refrigerant from an external cooling unit or similar device through the flow path 63a. The load interlock module LLM can cool the mounting stage 61 using the cooling section 63, and cool the substrate W by placing it on the mounting stage 61. Furthermore, the cooling section 63 can have any structure as long as it can cool the substrate W. For example, the cooling section 63 can also be a Peltier element or the like.

[0038] Return to Figure 1 The interior of the atmospheric pressure transfer chamber 20 is maintained at atmospheric pressure. Multiple loading interlock modules (LLMs) are arranged on one side of the atmospheric pressure transfer chamber 20. Multiple loading ports (LPs) are arranged on the other side of the atmospheric pressure transfer chamber 20. A second transfer mechanism 25 for transferring materials between the loading interlock modules (LLMs) and the loading ports (LPs) is disposed inside the atmospheric pressure transfer chamber 20. The second transfer mechanism 25 has an arm 25a. The arm 25a is rotatably fixed to a base 25d. The base 25d is fixed next to the loading port (LP3). A generally U-shaped first pick-up device 27a and a second pick-up device 27b are rotatably connected to the top of the arm 25a.

[0039] The loading port LP is configured as a storage container (hereinafter also referred to as a front-opening wafer transport box (FOUP)) capable of housing the substrate W. The FOUP has an openable and closable cover (not shown). When the FOUP is positioned at the loading port LP, the cover of the FOUP engages with the door of the loading port LP. In this state, by opening the door of the loading port LP, the cover and door of the FOUP move together, opening the FOUP and connecting it to the atmospheric pressure transport chamber 20 via the loading port LP.

[0040] The process module PM, vacuum transfer chamber 10, first transfer mechanism 15, loading interlock module LLM, atmospheric pressure transfer chamber 20, second transfer mechanism 25, and loading port LP, as described above, are respectively connected to the control device 30 and controlled by the control device 30.

[0041] The control device 30 is an information processing device such as a computer. The control device 30 controls various parts of the board processing system 1. The specific structure and function of the control device 30 are not particularly limited. The control device 30 may include, for example, a storage unit 31, a processing unit 32, an input / output interface (IO / I / F) 33, and a display unit 34. The storage unit 31 may be any storage device such as a hard disk, optical disk, or semiconductor memory element. The processing unit 32 may be a processor such as a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). The display unit 34 may be a functional unit for displaying information such as a liquid crystal display (LCD) or a touch panel. The processing unit 32 controls various parts of the board processing system 1 via the input / output interface 33 by reading and executing programs and processes stored in the storage unit 31.

[0042] Furthermore, when the substrate processing system 1 opens its process module PM, vacuum transfer chamber 10, and other containment chambers to the atmosphere for maintenance or other reasons, particles may sometimes be generated on the substrate W. These particles may include, for example, tiny fragments that entered the containment chambers due to the opening to the atmosphere. Additionally, particles may include those formed from atmospheric moisture adhering to the inner walls of the containment chambers, remaining even after vacuuming, and particles generated at points such as substrate defects due to moisture condensation. Hereinafter, these particles generated by moisture condensation will also be referred to as condensate.

[0043] Therefore, in this embodiment, the process described below is used to remove particulate matter from the containment chamber. The following description will use the case where the containment chamber, which is the target for particulate matter removal, is a vacuum transfer chamber 10, and particulate matter generated by the opening of the vacuum transfer chamber 10 to the atmosphere is removed as an example.

[0044] (Particulate Removal Methods)

[0045] Figure 3 This is a flowchart illustrating the process of the particulate removal method according to the embodiment. For example, in the control device 30, when a prescribed operation for instructing the removal of particulates is performed, the processing of the particulate removal method according to the embodiment is implemented. Figure 4 This is a diagram illustrating the process of particle removal involved in the implementation method. Figure 4 The changes in the internal state of the vacuum transport chamber 10 caused by the particulate removal method according to the embodiment are schematically shown in (A) to (D).

[0046] like Figure 4As shown, the vacuum transfer chamber 10 is box-shaped, with a removable top plate 10a on its upper part. The top plate 10a is removed for maintenance of the interior of the vacuum transfer chamber 10. Since the top plate 10a is removed, the vacuum transfer chamber 10 is open to the atmosphere, and moisture from the atmosphere adheres to the inner wall. When maintenance is complete, the top plate 10a is reinstalled. Sealing components 10b, such as seals, are provided at the contact points between the vacuum transfer chamber 10 and the top plate 10a, and the interior of the vacuum transfer chamber 10 is airtightly sealed by reinstalling the top plate 10a.

[0047] First, the vacuum transfer chamber 10 is heated for a predetermined first time (step S10). For example, a heater is placed around the vacuum transfer chamber 10, or the process module PM is controlled by the control device 30 to raise the temperature of the process module PM around the vacuum transfer chamber 10, thereby heating the vacuum transfer chamber 10. For example, the vacuum transfer chamber 10 is heated to 50°C to 70°C. The first time is, for example, set to a time of 3 hours or more. This causes the condensate nuclei, such as moisture and particles, that cause condensation on the substrate W, to react. For example, moisture adhering to the inner wall is released into the vacuum transfer chamber 10 due to the heat. Figure 4 (A)).

[0048] Next, the interior of the vacuum transfer chamber 10 is vented for a predetermined second time (step S11). For example, the control device 30 controls the vacuum transfer chamber 10 to vent the interior of the vacuum transfer chamber 10 for a second time. The second time is, for example, set to a period of 6 hours or more. As a result, any released moisture, etc., is discharged. Figure 4 (B)

[0049] Next, the vacuum transfer chamber 10 is repeatedly supplied with a prescribed gas and vented by an exhaust mechanism (step S12). For example, the control device 30 controls the vacuum transfer chamber 10 to repeat the gas supply and exhaust 10 times. Examples of the gas supplied are N2 gas. The inner wall of the vacuum transfer chamber 10 is coated with a sprayed material such as alumina, forming tiny pores that allow moisture, small fragments, and other particles to enter the inner wall. The moisture and particles that have entered the wall are released by the impact caused by the gas supply and exhaust, followed by exhaust. Figure 4 (C)).

[0050] Next, a cooling and conveying process is performed on the substrate W, and the cooled substrate W is conveyed into the vacuum conveying chamber 10 (step S13). As a result, moisture condenses on the cooled substrate W, and the moisture and other particulate matter are removed from the inside of the vacuum conveying chamber 10. Figure 4 (D)).

[0051] Next, the explanation Figure 3 The cooling and conveying process shown in step S13. Figure 5 This is a flowchart illustrating the cooling and conveying process involved in the embodiment. Figures 6A to 6D This is a diagram illustrating the process of transporting the substrate W in the cooling transport process according to the embodiment.

[0052] After the substrate W is transferred to the loading interlock module LLM, it is cooled by the cooling section 63 (step S20). For example, the control device 30 controls the atmospheric pressure transfer chamber 20 and the loading interlock module LLM, and uses the second transfer mechanism 25 to transfer the substrate W from the loading port LP to the mounting stage 61 of the loading interlock module LLM. In the loading interlock module LLM, the refrigerant cooled by the external cooling unit circulates in the cooling section 63 to cool the mounting stage 61. The substrate W is placed on the mounting stage 61 and comes into contact with the mounting stage 61, thereby cooling the substrate W. The substrate W is cooled to a temperature difference of 20°C or more, more preferably 25°C or more, between itself and the vacuum transfer chamber 10. For example, the control device 30 sets the temperature of the refrigerant for the cooling unit to a temperature 20°C or more, more preferably 25°C or more lower than the temperature of the vacuum transfer chamber 10, so as to cool the substrate W to a temperature difference of 20°C or more, more preferably 25°C or more, between itself and the vacuum transfer chamber 10. For example, the temperature of the wall constituting the vacuum transport chamber 10 when the cooled dummy wafer DW is transported to remove particles is set to about 25°C to 40°C. The control device 30 circulates the refrigerant cooled by the cooled unit in the cooling section 63 to cool the substrate W to 5°C to 20°C, and more preferably to 10°C to 15°C.

[0053] The substrate W used to remove particulate matter can be a semiconductor wafer, a dummy wafer with the same characteristics as a semiconductor wafer, or a dedicated substrate for particulate matter removal. For example, in Figure 6A In this process, a FOUP (Flatbed Up Unit) with dummy wafers (DWs) as substrates (W) is positioned at the loading port LP. A second transport mechanism 25 retrieves two dummy wafers (DWs) from the FOUP and transfers them to the mounting stage 61 of the loading interlock module LLM. The loading interlock module LLM raises a support pin 62 to receive the dummy wafers (DWs) from the second transport mechanism 25 and lowers the support pin 62 to bring the dummy wafers (DWs) into contact with the mounting stage 61 for cooling. Preferably, the loading interlock module LLM cools the dummy wafers (DWs) at ambient pressure (atmospheric atmosphere) without internal pressure reduction. This allows for efficient cooling of the dummy wafers (DWs).

[0054] The cooled substrate W is transferred to the vacuum transfer chamber 10 (step S21). For example, the control device 30 controls the loading interlock module LLM to depressurize the interior of the loading interlock module LLM to switch to a depressurized atmosphere. Then, the control device 30 opens the gate valve GV and controls the vacuum transfer chamber 10 to transfer the substrate W to the vacuum transfer chamber 10 using the first transfer mechanism 15. For example, in Figure 6BIn the process, the two cooled dummy wafers (DW) are transferred from the loading interlock module (LLM) to the vacuum transfer chamber (10).

[0055] The cooled substrate W is kept in the vacuum transfer chamber 10 for a predetermined time or more (step S22). For example, the control device 30 controls the vacuum transfer chamber 10, and the first transfer mechanism 15 moves the substrate W to the side wall of the vacuum transfer chamber 10 and stops. The substrate W is kept in the stopped state for a predetermined time or more. The predetermined time for keeping the substrate W in the stopped state is preferably 30 seconds or more, more preferably 60 seconds or more. When there are multiple cooled substrates W, each substrate W can be moved to a different position. For example, in Figure 6C In this process, one of the two cooled dummy wafers (DWs) is moved to the vicinity of the inlet and outlet of the process module (PM) within the vacuum transfer chamber 10, while the other is moved to the center of the vacuum transfer chamber 10 and maintained therefore for a specified time. As a result, moisture condenses and adheres to each dummy wafer (DW).

[0056] The substrate W is removed from the vacuum transfer chamber 10 (step S23). For example, the control device 30 controls the vacuum transfer chamber 10 to transfer the substrate W to the loading interlock module LLM using the first transfer mechanism 15.

[0057] Determine whether the substrate W has been cooled a predetermined number of times (step S24). For example, the control device 30 determines whether steps S20 to S23 have been performed a predetermined number of times. If the predetermined number of times has been performed (yes in step S24), the substrate W is saved (step S25). For example, the control device 30 controls the atmospheric pressure transfer chamber 20 and the loading interlock module LLM, and uses the second transfer mechanism 25 to transfer the substrate W from the loading interlock module LLM to the loading port LP. For example, in Figure 6D In this process, two dummy wafers (DWs) with attached moisture are transferred from the loading interlock module LLM to the loading port LP and stored in the FOUP. The predetermined number of times varies depending on the size of the internal space of the containment chamber, which is designated as the object of particle removal, and is set to a number of times that the causative factors of particles such as moisture can be sufficiently removed from the inside of the containment chamber. The predetermined number of times is preferably 5 times or more, and more preferably 10 times or more. For example, in the case of sufficiently removing the causative factors of particles from the vacuum transfer chamber 10 according to the embodiment, the predetermined number of times is set to 10 times.

[0058] On the other hand, if the predetermined number of repetitions is not performed ("No" in step S24), the process proceeds to step S20, where the following action is repeated: after the substrate W removed from the vacuum transfer chamber 10 is cooled by the cooling unit 63, the substrate W is transferred back to the vacuum transfer chamber 10. Thus, the same substrate W travels back and forth between the loading interlock module LLM and the vacuum transfer chamber 10, and moisture removal is repeatedly performed multiple times using the same substrate W. Furthermore, it is preferable that the position of the cooled substrate W within the vacuum transfer chamber 10 is different each time the repetition is performed. For example, during each repetition, the substrate W is sequentially transferred to the vicinity of the inlet / outlet of each process module PM within the vacuum transfer chamber 10 and maintained for a predetermined time or more. This allows moisture to be removed from various locations within the vacuum transfer chamber 10.

[0059] By implementing this Figure 5 The cooling and conveying process shown is able to remove moisture and other particulate matter from the interior of the vacuum conveying chamber 10.

[0060] The particulate removal method described in the embodiment is implemented when it is necessary to remove particulates. For example, the particulate removal method described in the embodiment is implemented after vacuuming the vacuum transfer chamber 10 after opening it to the atmosphere, or when there are many particulates during particulate inspection using product wafers or dummy wafers.

[0061] The dummy wafers (DWs) used in particulate removal can also have moisture and particles removed by heating or generating high-frequency plasma. For example, the substrate processing system 1 is provided with a cleaning chamber connected to the vacuum transfer chamber 10. The dummy wafers used in particulate removal can also have moisture and particles removed by heating to above 50°C or generating high-frequency plasma in the cleaning chamber connected to the vacuum transfer chamber 10. Alternatively, the substrate processing system 1 can transport the dummy wafers used in particulate removal to the process module PM instead of the cleaning chamber, and remove moisture and particles by heating or generating high-frequency plasma in the process module PM. Alternatively, the substrate processing system 1 can also provide a heating mechanism in the loading interlock module LLM, and remove moisture and particles by heating the dummy wafers used in particulate removal in the loading interlock module LLM.

[0062] Furthermore, in the substrate processing system 1 described in this embodiment, the substrate W is cooled within the loading interlock module LLM by providing a cooling section 63. However, this is not a limitation. The substrate processing system 1 may also cool the substrate W in other locations such as the vacuum transfer chamber 10 or the atmospheric pressure transfer chamber 20.

[0063] (An example of particulate removal results)

[0064] Next, an example of the result of removing the causal factors of particulate matter will be explained. In cases where moisture remains even after vacuuming is applied following opening the vacuum transfer chamber 10 to the atmosphere, condensation occurs as moisture accumulates on the substrate W. In particular, a large amount of condensation is generated on the cooled substrate W. Therefore, the effect of removing the causal factors of particulate matter will be explained using the amount of condensation generated on the cooled substrate W.

[0065] For cooling and conveying processes only involved in the implementation method ( Figure 3 Step S13 Figure 5 The reasons and effects of removing moisture and other particulate matter will be explained. Figure 7A This is a diagram illustrating an example of the removal results of the causal factors of particulate matter. Figure 7A The results show the count of the amount of condensate adhering to the cooled substrate W. Figure 7A The variation in the amount of condensate is shown when only the cooling transport process is performed. Figure 7A The left figure shows the amount of condensate generated on the cooled substrate W before the cooling transfer process was performed. Figure 7A The right figure shows the number of condensates generated on the cooled substrate W after the cooling transfer process. After the substrate W is transferred to the loading interlock module LLM to be cooled by the cooling unit 63, the substrate W is transferred to the vacuum transfer chamber 10. After maintaining the substrate W in the vacuum transfer chamber 10 for 1 minute, the substrate W is removed. Before the cooling transfer process, more than 7,000 condensates were generated, but after the cooling transfer process, the number of condensates was reduced by 98% to 114. By performing the cooling transfer process in this way, the number of condensates generated on the substrate W can be greatly reduced.

[0066] The particulate removal method involved in the implementation method ( Figure 3 The reasons and effects of removing moisture and other particulate matter will be explained. Figure 7B This is a diagram illustrating an example of the result of removing the causal factors of particulate matter. Figure 7B The results show the count of the amount of condensate adhering to the cooled substrate W. Figure 7B It shows how to find Figure 7A The change in the amount of condensate in the case where the vacuum transfer chamber 10, after only implementing the cooling and transfer process, further implements all the particulate removal methods involved in the embodiment. Figure 7B The left graph shows the amount of condensate that underwent cooling and conveying only, compared to... Figure 7A The right image is the same, with 114 images. Figure 7AThe right figure shows the amount of condensate generated on the substrate W after only performing the cooling transport process and further implementing all the particulate removal methods involved in the embodiment. By implementing the particulate removal method involved in the embodiment, the condensate was reduced by 40%. By implementing the particulate removal method involved in the embodiment in this way, compared with the case where only the cooling transport process is performed, the amount of condensate generated on the substrate W can be further reduced.

[0067] Next, the effect of the factors causing the removal of particles will be explained by the amount of condensate generated on substrate W at room temperature.

[0068] For cooling and conveying processes only involved in the implementation method ( Figure 3 Step S13 Figure 5 The reasons and effects of removing moisture and other particulate matter will be explained. Figure 8A This is a diagram illustrating an example of the removal results of the causal factors of particulate matter. Figure 8A The results show the count of the amount of condensate adhering to substrate W at room temperature. Figure 8A The variation in the amount of condensate is shown when only the cooling transport process is performed. Figure 8A The left figure shows the amount of condensate generated on substrate W at room temperature before the cooling and conveying process is performed. Figure 8A The right figure shows the number of condensates formed on substrate W at room temperature after the cooling and conveying process. Substrate W was conveyed into vacuum conveying chamber 10 at room temperature, and after maintaining its position inside the chamber for one minute, it was removed. Before the cooling and conveying process, approximately 240 condensates were formed, but after the process, the number decreased by 99% to just one. By performing this cooling and conveying process, the number of condensates formed on substrate W can be significantly reduced.

[0069] The particulate removal method involved in the implementation method ( Figure 3 The reasons and effects of removing moisture and other particulate matter will be explained. Figure 8B This is a diagram illustrating an example of the result of removing the causal factors of particulate matter. Figure 8B The results show the count of the amount of condensate adhering to substrate W at room temperature. Figure 8B It shows how to find Figure 8A The change in the amount of condensate when the vacuum transfer chamber 10, which only performs cooling and transfer processing, further implements the particulate removal method involved in the embodiment. Figure 8B The left graph shows the amount of condensate that underwent cooling and conveying only, compared to... Figure 8A The right image is the same, and there is 1 of them. Figure 8BThe right figure shows the amount of condensate generated on the substrate W after only performing the cooling transport process and further implementing all the particulate removal methods involved in the embodiment. By implementing the particulate removal method involved in the embodiment, the amount of condensate is reduced to 0. By implementing the particulate removal method involved in the embodiment in this way, compared with the case where only the cooling transport process is performed, the amount of condensate generated on the substrate W can be further reduced.

[0070] Next, the effect of removing particulate matter will be explained by using the number of tiny particles, such as condensate, generated on substrate W. Figure 9 This is a diagram illustrating an example of the removal results of the causal factors of particulate matter. Figure 9 The results show the count of the number of tiny fragments and other particles attached to the cooled substrate W. Figure 9 The diagram shows the variation of the average number of particles counted at four locations on the substrate W and the maximum number of particles counted at the four locations. Figure 9 The left figure is the result of finding Figure 7A The value in the state of substrate W in the left figure is the number of particles generated on substrate W before the cooling and conveying process is performed. Figure 9 The right figure shows how to find Figure 7B The value in the substrate W in the state shown in the right figure is the number of particles generated on the substrate W after only performing the cooling and conveying process and further performing all the particle removal methods involved in the embodiment. Tiny fragments and other particles are also reduced by performing the cooling and conveying process and particle removal methods involved in the embodiment.

[0071] By implementing the cooling conveying process and particle removal method involved in this embodiment, the number of particles such as condensate and tiny fragments generated on the substrate W can be reduced.

[0072] Furthermore, in the above embodiments, the removal of particles from the vacuum transport chamber 10 was described as an example. However, it is not limited to the removal of particles from the vacuum transport chamber 10. The particle removal method according to the embodiments can be applied to the removal of particles from a containment chamber whose interior is under a predetermined depressurization state. For example, when the process module PM is also open to the atmosphere, particles may sometimes be generated on the substrate W. Therefore, the particle removal method according to the embodiments can also be used to remove particles from the process module PM by transporting the cooled substrate W to the process module PM. For example, the control device 30 may also control the first transport mechanism 15 to remove the cooled substrate W from the process module PM after maintaining the cooled substrate W in the state inside the process module PM for a predetermined time or more, without performing substrate processing on the process module PM. In order to suppress the temperature rise, it is preferable to maintain the cooled substrate W in the state inside the process module PM after it has been separated from the mounting stage 51.

[0073] Figure 10 This diagram illustrates the general structure of the process module PM according to the embodiment. A mounting stage 51 for placing a substrate W is provided inside the process module PM. A support pin 52 is provided on the mounting stage 51. The support pin 52 is configured to be able to move up and down, allowing the substrate W to move up and down relative to the mounting stage 51. An inlet / outlet 53 for feeding and discharging the substrate W is formed on the side wall of the process module PM. For example, the control device 30 controls the first conveying mechanism 15 and the support pin 52 in the following manner: the first conveying mechanism 15 conveys the cooled substrate W into the process module PM via the inlet / outlet 53, and after maintaining the state in which the support pin 52 is raised to separate the substrate W from the mounting stage 51 for a predetermined time or more, the substrate W is removed from the process module PM. Alternatively, the control device 30 can also control the process module PM in the following manner: the first conveying mechanism 15 conveys the cooled substrate W into the process module PM, and after maintaining the state in which the substrate W is placed on the first conveying mechanism 15 for a predetermined time or more, the substrate W is removed from the process module PM. Alternatively, if the heater is built into the mounting stage 51, the mounting stage 51 can also be heated by the heater. Heating the mounting stage 51 releases the particles attached to its upper surface. The released particles adhere to the cooled substrate W disposed on top. Thus, the particles attached to the upper surface of the mounting stage 51 can be recovered.

[0074] (Effects of the implementation method)

[0075] As described above, the substrate processing system 1 according to the embodiment includes a vacuum transfer module (vacuum transfer chamber 10), a substrate processing module (process module PM), a loading interlock module LLM, a substrate cooling stage (cooling section 63), a substrate transfer robot (first transfer mechanism 15), and a control unit (control device 30). The substrate processing module is configured to be connected to the vacuum transfer module and process the substrate W under reduced pressure. The loading interlock module LLM is connected to the vacuum transfer module. At least one substrate cooling stage is disposed within the loading interlock module. At least one substrate transfer robot is disposed within the vacuum transfer module and includes at least one end effector. The control unit is configured to control the particle removal operation. The particulate removal operation includes the following steps: step (a) cooling at least one substrate dummy wafer (dummy wafer DW) placed on at least one substrate cooling stage to a first temperature, the first temperature being 5°C to 20°C; and step (b) with the cooled substrate dummy wafer placed on at least one end effector, maintaining at least one end effector in any one of multiple positions within the vacuum transfer module or the substrate processing module for a first period, the first period being 30 seconds or more. This allows the substrate processing system 1 to remove particulates from the receiving chamber (vacuum transfer module or substrate processing module) without requiring a cooling mechanism in the receiving chamber (vacuum transfer module or substrate processing module) containing the particulates to be removed.

[0076] Furthermore, the first temperature is 10°C to 15°C. Therefore, the substrate processing system 1 can cause the particulate matter to adhere to the substrate W.

[0077] Furthermore, the first period is 60 seconds or more. Therefore, the substrate processing system 1 is able to attach the microparticles to the substrate W.

[0078] Furthermore, steps (a) and (b) are repeated alternately multiple times. Additionally, steps (a) and (b) are repeated alternately more than five times. Thus, the substrate processing system 1 can remove the causative factors of particulate matter using the same substrate W, thereby reducing the number of substrates W contaminated by causative factors.

[0079] In addition, the particulate removal process includes a step of heating the substrate processing module or vacuum transfer module for more than 3 hours before step (a). As a result, the substrate processing system 1 can release condensate such as moisture and particulates adhering to the inner wall of the substrate processing module or vacuum transfer module onto the substrate W.

[0080] Additionally, at least one substrate cooling stage has a first substrate cooling stage and a second substrate cooling stage. At least one end effector has a first end effector and a second end effector. The particulate removal operation includes the following steps: step (a) cooling a first substrate dummy and a second substrate dummy placed on the first substrate cooling stage and the second substrate cooling stage, respectively, to a first temperature; and step (b) with the cooled first substrate dummy and the second substrate dummy placed on the first end effector and the second end effector, respectively, maintaining the first end effector in a first position among multiple positions for a first period, and maintaining the second end effector in a second position among multiple positions for a first period. This increases the area of ​​the portion where the causative element can adhere, thus enabling the substrate processing system 1 to rapidly remove the causative element of the particulate matter.

[0081] Furthermore, the substrate processing system 1 according to the embodiment includes a vacuum transfer module (vacuum transfer chamber 10), a substrate processing module (process module PM), a substrate stage (placement stage 51), a loading interlock module LLM, a substrate cooling stage (cooling unit 63), a substrate transfer robot (first transfer mechanism 15), and a control unit (control device 30). The substrate processing module is configured to be connected to the vacuum transfer module and process the substrate W under reduced pressure. The substrate stage is disposed in the substrate processing module and includes multiple lifting pins (support pins 52). The multiple lifting pins are configured to move between an upper position and a lower position in the longitudinal direction. The loading interlock module LLM is connected to the vacuum transfer module. There is at least one substrate cooling stage, which is disposed within the loading interlock module. There is at least one substrate transfer robot, which is disposed within the vacuum transfer module and includes at least one end effector. The control unit is configured to control the particle removal operation. The particulate removal operation includes the following steps: step (a) cooling at least one substrate dummy sheet placed on at least one substrate cooling stage to a first temperature, the first temperature being 5°C to 20°C; step (b) placing the cooled substrate dummy sheet on a plurality of lifting pins located at an upper position; and step (c) maintaining the state of the cooled substrate dummy sheet placed on the plurality of lifting pins located at an upper position for a first period, the first period being 30 seconds or more. Therefore, the substrate processing system 1 can remove particulates from the receiving chamber (substrate processing module) without installing a cooling mechanism in the receiving chamber (substrate processing module) where the particulates are to be removed.

[0082] Furthermore, the substrate processing system 1 according to the embodiment includes a first receiving chamber (vacuum transfer chamber 10, process module PM), a second receiving chamber (load interlock module LLM), a transfer unit (first transfer mechanism 15), and a control unit (control device 30). The interior of the first receiving chamber is set to a predetermined depressurization state, and at least one of the transfer of the substrate W and the processing of the substrate W is performed inside it. A cooling unit (cooling unit 63) for cooling the substrate W is provided in the second receiving chamber. The transfer unit transfers the substrate W between the first receiving chamber and the second receiving chamber. In the case of removing particles generated by the first receiving chamber, the control unit controls the transfer unit to transfer the substrate W to the second receiving chamber and cool the substrate W using the cooling unit, and then transfer the cooled substrate W to the first receiving chamber. As a result, the substrate processing system 1 can remove particles from the receiving chamber (first receiving chamber) without providing a cooling mechanism in the receiving chamber (first receiving chamber) where the particles are to be removed.

[0083] Furthermore, the control unit does not perform substrate processing in the first receiving chamber, but controls the conveying unit to remove the cooled substrate W from the first receiving chamber after maintaining the state of the substrate W inside the first receiving chamber for a predetermined time or longer. As a result, the substrate processing system 1 can cause the particulate matter caused by moisture in the first receiving chamber to adhere to the cooled substrate W, and thus can remove the particulate matter caused by moisture from the first receiving chamber.

[0084] Furthermore, the control unit controls the conveying unit to repeatedly perform the following operation: after conveying the substrate W to the second receiving chamber and cooling the substrate W using the cooling unit, the substrate W is then conveyed to the first receiving chamber. As a result, the substrate processing system 1 is able to significantly reduce the amount of particulate matter from the first receiving chamber.

[0085] Furthermore, the control unit controls the conveying unit to repeatedly transport the same substrate W back and forth between the second and first receiving chambers. Since particulate matter is a cause of particle adhesion on the substrate W, removing this cause by using the same substrate W reduces the number of substrates contaminated with it.

[0086] Additionally, the first receiving chamber is heated. The substrate W is cooled by the cooling unit until the temperature difference between the substrate W and the first receiving chamber is 20°C or more. As a result, the substrate processing system 1 can use the thermophoresis caused by the temperature difference to attach the particulate matter to the substrate W.

[0087] In addition, multiple cooling sections are provided to cool multiple substrates W. The conveying section is configured to convey multiple substrates W while holding them. The control section controls the conveying section to hold the multiple substrates W cooled by the multiple cooling sections and convey the multiple substrates W to the first receiving chamber. As a result, the area of ​​the portion where the cause element can adhere increases, and the substrate processing system 1 can quickly remove particulate cause elements.

[0088] Furthermore, the first receiving chamber is configured as a vacuum transport chamber 10 for transporting the substrate W to the process module PM that performs substrate processing. Thus, even when the vacuum transport chamber 10 is open to the atmosphere, the substrate processing system 1 can remove particulate matter from the vacuum transport chamber 10 without installing a cooling mechanism.

[0089] Furthermore, the control unit controls the conveying unit to repeatedly perform the following operation: after the substrate W is conveyed to the second receiving chamber and cooled by the cooling unit, the cooled substrate W is conveyed to different positions within the vacuum conveying chamber 10. Thus, the substrate processing system 1 can remove particulate matter from various positions within the vacuum conveying chamber 10, and can rapidly reduce the amount of particulate matter within the vacuum conveying chamber 10.

[0090] Furthermore, the first containment chamber is configured as the process module PM for substrate processing. Therefore, even when the process module PM is open to the atmosphere, the substrate processing system 1 can remove particulate matter from the process module PM without requiring a cooling mechanism.

[0091] Furthermore, the process module PM is internally equipped with a mounting stage 51 for placing the substrate W. The mounting stage 51 is equipped with a lifting mechanism (support pin 52) for raising and lowering the substrate W relative to the mounting stage 51. The control unit controls the conveying unit and the lifting mechanism as follows: after conveying the substrate W to the second receiving chamber and cooling it using the cooling unit, the cooled substrate W is conveyed into the process module PM. After maintaining the state where the lifting mechanism raises to separate the substrate W from the mounting stage 51, the substrate W is removed from the process module PM. Thus, the substrate processing system 1 can cause particulate matter to adhere to both sides of the substrate W and can quickly remove particulate matter.

[0092] The embodiments have been described above; however, it should be understood that the embodiments disclosed herein are illustrative in all respects and not restrictive. In fact, the above embodiments can be embodied in various ways. Furthermore, the above embodiments can be omitted, substituted, and modified in various ways without departing from the claims and their spirit.

[0093] For example, in the above embodiment, the case where the substrate W is a semiconductor wafer was described as an example, but it is not limited to this. The substrate can also be any substrate.

[0094] Furthermore, it should be understood that the embodiments disclosed herein are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various ways. In addition, the above-described embodiments can be omitted, substituted, and modified in various ways without departing from the appended claims and their spirit.

[0095] Explanation of reference numerals in the attached figures

[0096] 1: Substrate processing system; 10: Vacuum transfer chamber; 15: First transfer mechanism; 15a: First arm; 15b: Second arm; 20: Atmospheric pressure transfer chamber; 25: Second transfer mechanism; 25a: Arm; 27a: First pickup; 27b: Second pickup; 30: Control device; 31: Storage unit; 32: Processing unit; 33: Input / output interface; 34: Display unit; 51: Stage; 52: Support pin; 61: Stage; 62: Support pin; 63: Cooling unit; LLM1, LLM2: Loading interlock module; LP1~LP5: Loading port; PM1~PM8: Process module; GV: Gate valve; W: Substrate; DW: Dummy wafer.

Claims

1. A substrate processing system comprising: Vacuum transfer module; A substrate processing module is configured to be connected to the vacuum conveying module and process the substrate under reduced pressure. Atmospheric pressure transport room; A loading interlock module is connected to the vacuum conveying module and the atmospheric pressure conveying chamber; At least one substrate cooling stage is configured within the loading interlock module; At least one substrate transport robot is configured within the vacuum transport module, the substrate transport robot including at least one end effector; and The control unit is configured to control the particulate removal operation. in, The particle removal process includes the following steps: Step (a) Cooling at least one substrate dummy placed on at least one substrate cooling stage within the loading interlock module to a first temperature, wherein the first temperature is 5°C to 20°C; and Step (b): With at least one cooled substrate dummy placed on the at least one end effector, the at least one end effector is maintained at any one of a plurality of positions within the vacuum transfer module for a first period, the first period being 30 seconds or more. The control unit executes step (b) after performing step (a), in which the microparticles in the vacuum transfer module adhere to at least one cooled substrate dummy.

2. The substrate processing system according to claim 1, characterized in that, The first temperature is 10℃~15℃.

3. The substrate processing system according to claim 1 or 2, characterized in that, The first period is 60 seconds or more.

4. The substrate processing system according to claim 1 or 2, characterized in that, The process (a) and process (b) are repeated alternately multiple times.

5. The substrate processing system according to claim 1 or 2, characterized in that, Repeat step (a) and step (b) alternately more than 5 times.

6. The substrate processing system according to claim 1 or 2, characterized in that, The particle removal action includes a step of heating the substrate processing module or the vacuum transfer module for more than 3 hours prior to step (a).

7. The substrate processing system according to claim 1 or 2, characterized in that, The at least one substrate cooling stage has a first substrate cooling stage and a second substrate cooling stage. The at least one end effector has a first end effector and a second end effector. The particulate removal process includes the following steps: Step (a) Cooling the first substrate dummy and the second substrate dummy, respectively placed on the first substrate cooling stage and the second substrate cooling stage, to the first temperature; and Step (b): With the cooled first substrate dummy and second substrate dummy respectively placed on the first end effector and the second end effector, the first end effector is maintained in a first position among the plurality of positions for the first period, and the second end effector is maintained in a second position among the plurality of positions for the first period.

8. A substrate processing system comprising: Vacuum transfer module; A substrate processing module is configured to be connected to the vacuum conveying module and process the substrate under reduced pressure. A substrate stage, which is disposed in the substrate processing module, includes a plurality of lifting pins configured to move between an upper position and a lower position in the longitudinal direction. Atmospheric pressure transport room; A loading interlock module is connected to the vacuum conveying module and the atmospheric pressure conveying chamber; At least one substrate cooling stage is configured within the loading interlock module; At least one substrate transport robot is configured within the vacuum transport module, the substrate transport robot including at least one end effector; and The control unit is configured to control the particulate removal operation. The particulate removal process includes the following steps: Step (a) Cool at least one substrate dummy placed on at least one substrate cooling stage within the loading interlock module to a first temperature, wherein the first temperature is 5°C to 20°C; Step (b): Placing at least one cooled substrate dummy onto the plurality of lifting pins located at the upper position; and Step (c) involves maintaining the state of at least one cooled substrate dummy placed on the plurality of lifting pins located at the upper position for a first period of 30 seconds or more. After performing step (a), the control unit performs step (b) and step (c), in which the microparticles in the substrate processing module adhere to at least one cooled substrate dummy.

9. A method for removing particulate matter from a substrate processing system, the substrate processing system comprising: Vacuum transfer module; A substrate processing module is configured to be connected to the vacuum conveying module and process the substrate under reduced pressure. Atmospheric pressure transport room; A loading interlock module is connected to the vacuum conveying module and the atmospheric pressure conveying chamber; At least one substrate cooling stage is configured within the loading interlock module; and At least one substrate transport robot is configured within the vacuum transport module, and the substrate transport robot includes at least one end effector. The particulate removal method comprises the following steps: Step (a) Cooling at least one substrate dummy placed on at least one substrate cooling stage within the loading interlock module to a first temperature, wherein the first temperature is 5°C to 20°C; and Step (b): With at least one cooled substrate dummy placed on the at least one end effector, the at least one end effector is maintained at any one of a plurality of positions within the vacuum transfer module for a first period, the first period being 30 seconds or more. The particle removal method performs step (b) after step (a), in which particles within the vacuum transfer module adhere to at least one cooled substrate dummy.

10. A method for removing particulate matter from a substrate processing system, the substrate processing system comprising: Vacuum transfer module; A substrate processing module is configured to be connected to the vacuum conveying module and process the substrate under reduced pressure. A substrate stage, which is disposed in the substrate processing module, includes a plurality of lifting pins configured to move between an upper position and a lower position in the longitudinal direction. Atmospheric pressure transport room; A loading interlock module is connected to the vacuum conveying module and the atmospheric pressure conveying chamber; At least one substrate cooling stage is configured within the loading interlock module; as well as At least one substrate transport robot is configured within the vacuum transport module, and the substrate transport robot includes at least one end effector. The particulate removal method comprises the following steps: Step (a) Cool at least one substrate dummy placed on at least one substrate cooling stage within the loading interlock module to a first temperature, wherein the first temperature is 5°C to 20°C; Step (b): Place at least one cooled substrate dummy onto the plurality of lifting pins located at the upper position; as well as In step (c), the cooled dummy substrate is placed on the plurality of lifting pins located at the upper position and maintained in this state for a first period of 30 seconds or more. The particle removal method performs steps (b) and (c) after step (a), in which particles within the substrate processing module adhere to at least one cooled substrate dummy.

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