Substrate processing apparatus and substrate processing method

Abstract

This invention provides a substrate processing apparatus and a substrate processing method, wherein a processing fluid is supplied from a processing fluid supply source to a substrate processing unit that performs processing using a supercritical state processing fluid. The substrate processing apparatus includes: a first supply line; a plurality of second supply lines; a pump; a plurality of substrate processing units respectively connected to the plurality of second supply lines; a branch point located on the first supply line downstream of the pump; a connection point located on the first supply line upstream of the pump; a branch line connecting the branch point and the connection point; a pressure regulating unit located on the branch line between the branch point and the connection point; and a control unit that controls the pressure regulating unit, the control unit controlling the pressure regulating unit according to the number of substrate processing units supplied with the processing fluid, thereby controlling the pressure of the processing fluid at the branch point by varying the amount of processing fluid flowing to the branch line.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] In the manufacturing process of semiconductor devices in which integrated circuits are stacked on the surface of substrates such as semiconductor wafers (hereinafter referred to as wafers), liquid treatments such as chemical solution cleaning or wet etching are performed. In recent years, drying methods using supercritical processing fluids have been used to remove liquids and other substances adhering to the surface of the wafer due to such liquid treatments.

[0003] Patent document 1 discloses a substrate processing apparatus in which a fluid supply tank is connected to a processing container via a supply pipeline.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-81966 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] This disclosure provides a substrate processing apparatus and a substrate processing method, wherein a processing fluid can be supplied from a processing fluid supply source to a substrate processing unit that performs processing using a processing fluid in a supercritical state.

[0009] Solution for solving the problem

[0010] A substrate processing apparatus according to a present disclosure includes: a first supply line connected to a processing fluid supply source; a plurality of second supply lines connected to the first supply line, wherein processing fluid flowing in the first supply line flows into the plurality of second supply lines; a pump disposed on the first supply line between the processing fluid supply source and the plurality of second supply lines; a plurality of substrate processing units respectively connected to the plurality of second supply lines, wherein the processing fluid supplied via the second supply lines is in a supercritical state, thereby drying a substrate with liquid adhering to its surface; and a branch point. The system includes: a first supply line located downstream of the pump; a connection point located upstream of the pump on the first supply line; a branch line connecting the branch point and the connection point; a pressure regulating unit located on the branch line between the branch point and the connection point; and a control unit controlling the pressure regulating unit based on the number of substrate processing units supplied with the processing fluid, thereby controlling the pressure of the processing fluid at the branch point by varying the amount of processing fluid flowing into the branch line.

[0011] The effects of the invention

[0012] According to this disclosure, a processing fluid can be supplied from a processing fluid supply source to a substrate processing unit that performs processing using a processing fluid in a supercritical state. Attached Figure Description

[0013] Figure 1 This is a diagram illustrating a structural example of the substrate processing apparatus according to an embodiment.

[0014] Figure 2 This is a diagram showing an example of the structure of a liquid treatment unit.

[0015] Figure 3 This is a schematic perspective view showing an example of the structure of a drying unit.

[0016] Figure 4 This is a diagram showing an example of the structure of a drying unit.

[0017] Figure 5 This is a diagram showing the first structural example of a supply unit.

[0018] Figure 6 This is a diagram (one of) showing the specific operation of the first structural example of the supply unit.

[0019] Figure 7 This is a diagram (second one) showing the specific operation of the first structural example of the supply unit.

[0020] Figure 8 This is a diagram (third one) showing the specific operation of the first structural example of the supply unit.

[0021] Figure 9 This is a diagram (fourth one) showing the specific operation of the first structural example of the supply unit.

[0022] Figure 10 This is a diagram showing the second structural example of the supply unit.

[0023] Figure 11 This is a diagram (one of) showing the specific operation of the second structural example of the supply unit.

[0024] Figure 12 This is a diagram (second example) showing the specific operation of the second structural example of the supply unit.

[0025] Figure 13 This is a diagram (third one) showing the specific operation of the second structural example of the supply unit.

[0026] Figure 14 This is a diagram (fourth one) showing the specific operation of the second structural example of the supply unit.

[0027] Figure 15This is a diagram (the fifth one) showing the specific operation of the second structural example of the supply unit. Detailed Implementation

[0028] Hereinafter, embodiments of the substrate processing system and processing fluid supply method disclosed in this application will be described in detail with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments shown below. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and proportions of the elements may differ from reality. Moreover, there may be instances where the dimensional relationships and proportions of the elements differ from those in the drawings themselves.

[0029] <Structure of the substrate processing device>

[0030] First, refer to Figure 1 The structure of the substrate processing apparatus 1 according to the embodiment will be described. Figure 1 This is a diagram illustrating a structural example of the substrate processing apparatus 1 according to the embodiment. Furthermore, in the following description, to clarify positional relationships, the X-axis, Y-axis, and Z-axis are defined as mutually orthogonal, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0031] like Figure 1 As shown, the substrate processing apparatus 1 includes an infeed / outfeed station 2 and a processing station 3. The infeed / outfeed station 2 and the processing station 3 are arranged adjacent to each other.

[0032] The infeed / outfeed station 2 includes a carrier placement section 11 and a transport section 12. The carrier placement section 11 has multiple carriers C that hold multiple semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal state.

[0033] The conveying section 12 is disposed adjacent to the carrier placement section 11. The conveying device 13 and the transfer section 14 are disposed inside the conveying section 12.

[0034] The transport device 13 includes a wafer holding mechanism for holding the wafer W. Furthermore, the transport device 13 is capable of moving horizontally and vertically, as well as rotating around the vertical axis, and uses the wafer holding mechanism to transport the wafer W between the carrier C and the junction 14.

[0035] The processing station 3 is located adjacent to the conveying unit 12. The processing station 3 includes a conveying module 4, multiple processing modules 5, and multiple supply units 19.

[0036] The conveying module 4 includes a conveying area 15 and a conveying device 16. The conveying area 15 is, for example, a cuboid region extending along the arrangement direction (X-axis direction) of the feed-in / feed-out station 2 and the processing station 3. The conveying device 16 is arranged in the conveying area 15.

[0037] The transport device 16 includes a wafer holding mechanism for holding the wafer W. Furthermore, the transport device 16 is capable of moving horizontally and vertically, as well as rotating around a vertical axis, and uses the wafer holding mechanism to transport the wafer W between the junction 14 and the plurality of processing modules 5.

[0038] Multiple processing modules 5 are arranged adjacent to the conveying area 15 on both sides of the conveying area 15. Specifically, the multiple processing modules 5 are arranged on one side (positive Y-axis side) and the other side (negative Y-axis side) of the conveying area 15 in a direction orthogonal to the arrangement direction (X-axis direction) of the feed-in / feed-out station 2 and the processing station 3.

[0039] Furthermore, although not shown, the multiple processing modules 5 are arranged in multiple layers (e.g., three layers) along the vertical direction. Moreover, the transport of the wafer W between the processing modules 5 arranged in each layer and the junction 14 is performed by a transport device 16 arranged in the transport module 4. Additionally, the number of layers of the multiple processing modules 5 is not limited to three.

[0040] Each processing module 5 includes a liquid processing unit 17 and a drying unit 18. The drying unit 18 is an example of a substrate processing unit.

[0041] The liquid processing unit 17 performs a cleaning process to clean the patterned surface, i.e., the upper surface, of the wafer W. Furthermore, the liquid processing unit 17 performs a liquid film formation process to form a liquid film on the upper surface of the cleaned wafer W. The structure of the liquid processing unit 17 will be described later.

[0042] The drying unit 18 performs supercritical drying on the wafer W after liquid film formation treatment. Specifically, the drying unit 18 dries the wafer W by contacting it with a supercritical processing fluid (hereinafter also referred to as "supercritical fluid"). The structure of the drying unit 18 will be described later.

[0043] The liquid treatment unit 17 and the drying unit 18 are arranged along the conveying area 15 (i.e., along the X-axis direction). The liquid treatment unit 17 is positioned closer to the feed-in / feed-out station 2 than the drying unit 18.

[0044] Thus, each processing module 5 has a liquid treatment unit 17 and a drying unit 18. That is, the same number of liquid treatment units 17 and drying units 18 are provided in the substrate processing apparatus 1.

[0045] Furthermore, the drying unit 18 includes a processing area 181 for supercritical drying and a junction area 182 for transferring the wafer W between the transport module 4 and the processing area 181. The processing area 181 and the junction area 182 are arranged along the transport area 15.

[0046] Specifically, the transfer area 182 is located on the side closer to the liquid processing unit 17 than the processing area 181. That is, in each processing module 5, the liquid processing unit 17, the transfer area 182, and the processing area 181 are arranged sequentially along the conveying area 15.

[0047] One supply unit 19 is configured relative to three processing modules 5. For example, one supply unit 19 is configured relative to three processing modules 5 stacked in the vertical direction.

[0048] The supply unit 19 supplies processing fluid to the drying unit 18. Specifically, the supply unit 19 includes a supply device assembly comprising a flow meter, a flow regulator, a back pressure valve, and a heater, and a housing for housing the supply device assembly. In this embodiment, the supply unit 19 supplies CO2 as the processing fluid to the drying unit 18. The structure of the supply unit 19 will be described later. Processing fluid can be supplied from one supply unit 19 to three processing modules 5.

[0049] like Figure 1 As shown, the substrate processing apparatus 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 7 and a storage unit 8.

[0050] The control unit 7 includes a microcomputer with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), and input / output ports, as well as various circuits. The CPU of this microcomputer reads and executes programs stored in the ROM to control the conveying devices 13 and 16, the liquid treatment unit 17, the drying unit 18, and the supply unit 19.

[0051] Alternatively, the program can be stored on a computer-readable storage medium and installed from that storage medium into the storage unit 8 of the control device 6. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0052] The storage unit 8 is implemented, for example, using semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical disks.

[0053] In the substrate processing apparatus 1 configured as described above, firstly, the conveying device 13 of the feed-in / output station 2 removes the wafer W from the carrier C placed in the carrier placement section 11 and places the removed wafer W in the transfer section 14. The wafer W placed in the transfer section 14 is removed from the transfer section 14 by the conveying device 16 of the processing station 3 and fed into the liquid processing unit 17.

[0054] After the wafer W fed into the liquid processing unit 17 undergoes cleaning and liquid film formation processes, it is discharged from the liquid processing unit 17 by the transport device 16. The wafer W discharged from the liquid processing unit 17 is then fed into the drying unit 18 by the transport device 16, where it undergoes drying processes.

[0055] The wafer W, which has been dried in the drying unit 18, is sent out from the drying unit 18 by the conveying device 16 and placed in the transfer section 14. Then, the processed wafer W placed in the transfer section 14 is returned to the carrier C in the carrier placement section 11 by the conveying device 13.

[0056] <Structure of the liquid treatment unit>

[0057] Next, refer to Figure 2 The structure of the liquid treatment unit 17 will be described. Figure 2 This is a diagram illustrating an example of the structure of the liquid processing unit 17. The liquid processing unit 17 is, for example, configured as a monolithic cleaning device that cleans wafers W one by one by rotating them.

[0058] like Figure 2 As shown, the liquid processing unit 17 holds the wafer W in a generally horizontal position using a wafer holding mechanism 25 disposed in the outer chamber 23 forming the processing space, and rotates the wafer W by rotating the wafer holding mechanism 25 about the vertical axis.

[0059] Then, the liquid treatment unit 17 moves the nozzle arm 26 above the rotating wafer W and supplies chemical solution and rinsing liquid from the chemical solution nozzle 26a located at the top of the nozzle arm 26 in a predetermined sequence, thereby performing cleaning treatment on the upper surface of the wafer W.

[0060] Furthermore, a chemical solution supply path 25a is also formed inside the wafer holding mechanism 25 in the liquid processing unit 17. Then, the lower surface of the wafer W is also cleaned using the chemical solution and rinsing fluid supplied from the chemical solution supply path 25a.

[0061] The cleaning process, for example, first uses SCl solution (a mixture of ammonia and hydrogen peroxide water) as an alkaline chemical solution to remove particulate and organic pollutants. Then, it is rinsed with deionized water (hereinafter referred to as "DIW") as a rinsing solution.

[0062] Next, the natural oxide film is removed using a dilute hydrofluoric acid aqueous solution (hereinafter referred to as "DHF") as an acidic chemical solution, followed by rinsing with DIW.

[0063] The aforementioned chemical solutions are received by the outer chamber 23 and the inner cup 24 disposed within the outer chamber 23, and discharged from the drain port 23a at the bottom of the outer chamber 23 and the drain port 24a at the bottom of the inner cup 24. Furthermore, the atmospheric gas inside the outer chamber 23 is discharged from the exhaust port 23b at the bottom of the outer chamber 23.

[0064] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid treatment unit 17 supplies liquid IPA (IsoPropylAlcohol) (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. This replaces the DIW remaining on both sides of the wafer W with IPA. Afterwards, the liquid treatment unit 17 slowly stops rotating the wafer holding mechanism 25.

[0065] The wafer W, having completed the liquid film formation process, is held in a state where an IPA liquid film has formed on its upper surface. It is then transferred to the transport device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 and sent out from the liquid processing unit 17.

[0066] The liquid film formed on the wafer W prevents pattern collapse due to liquid evaporation (vaporization) on the upper surface of the wafer W during the transfer of the wafer W from the liquid processing unit 17 to the drying unit 18 and during the feeding action into the drying unit 18.

[0067] <Structure of the drying unit>

[0068] Next, refer to Figure 3 and Figure 4 The structure of the drying unit 18 will be described. Figure 3 This is a schematic perspective view showing an example of the structure of the drying unit 18. Figure 4 This is a diagram showing an example of the structure of drying unit 18.

[0069] like Figure 3 As shown, the drying unit 18 has a main body 31, a holding plate 32, and a cover member 33. An opening 34 for feeding and discharging the wafer W is formed in the frame-shaped main body 31. The holding plate 32 holds the wafer W to be processed in a horizontal orientation. The cover member 33 supports the holding plate 32 and closes the opening 34 when the wafer W is fed into the main body 31. The main body 31 is an example of a processing container.

[0070] The main body 31 is, for example, a container that forms a processing space inside capable of accommodating a wafer W with a diameter of 300 mm, and has supply ports 35 and 36 and an outlet port 37 on its walls. The supply ports 35 and 36 and the outlet port 37 are respectively connected to the supply flow path and the outlet flow path for allowing supercritical fluid to flow in the drying unit 18.

[0071] The supply port 35 is connected to the side opposite to the opening 34 within the frame-shaped main body 31. Furthermore, the supply port 36 is connected to the bottom surface of the main body 31. Moreover, the discharge port 37 is connected to the lower side of the opening 34. Additionally, in Figure 3 The diagram shows two supply ports 35 and 36 and one discharge port 37, but the number of supply ports 35, 36 and discharge ports 37 is not particularly limited.

[0072] Furthermore, fluid supply manifolds 38 and 39 and fluid discharge manifold 40 are provided inside the main body 31. Moreover, in the fluid supply manifolds 38 and 39, multiple supply ports are arranged along the length direction of the fluid supply manifolds 38 and 39, and in the fluid discharge manifold 40, multiple discharge ports are arranged along the length direction of the fluid discharge manifold 40.

[0073] A fluid supply manifold 38 is connected to a supply port 35. The fluid supply manifold 38 is disposed adjacent to the side opposite to the opening 34 inside the frame-shaped main body 31. Furthermore, a plurality of supply ports arranged in the fluid supply manifold 38 face the opening 34.

[0074] A fluid supply manifold 39 is connected to a supply port 36. The fluid supply manifold 39 is located in the center of the bottom surface inside the frame-shaped main body 31. Furthermore, a plurality of supply ports arranged in the fluid supply manifold 39 face upward.

[0075] The fluid discharge manifold 40 is connected to the discharge port 37. The fluid discharge manifold 40 is located inside the frame-shaped main body 31, adjacent to the side of the opening 34, and positioned below the opening 34. Furthermore, the plurality of discharge ports formed by the arrangement of the fluid discharge manifold 40 face upwards.

[0076] Fluid supply manifolds 38 and 39 supply supercritical fluid into the body 31. Furthermore, fluid discharge manifold 40 guides and discharges the supercritical fluid from the body 31 to the outside of the body 31. Additionally, the supercritical fluid discharged to the outside of the body 31 via fluid discharge manifold 40 includes IPA liquid, which is supercritical fluid dissolved from the surface of wafer W into a supercritical state.

[0077] like Figure 4 As shown, the drying unit 18 is connected to the second supply line 162 of the supply unit 19. The second supply line 162 branches into supply lines 202 and 203 within the drying unit 18. Supply line 202 is connected to supply port 35, and supply line 203 is connected to supply port 36. A valve 211 is provided on supply line 202, and a valve 212 is provided on supply line 203. Additionally, the drying unit 18 is equipped with a heater (not shown) that heats the processing fluid supplied via the second supply line 162 to a supercritical state.

[0078] Valves 211 and 212 are valves that adjust the flow of the processed fluid by opening and closing. When open, the processed fluid flows to the downstream supply lines 202 and 203. When closed, the processed fluid does not flow to the downstream supply lines 202 and 203.

[0079] Discharge line 205 is connected to discharge port 37. From the upstream side (main body 31 side), discharge line 205 is sequentially equipped with a pressure sensor 222, a valve 213, a flow meter 223, and a back pressure valve 224. Additionally, discharge line 206 branches off from supply line 203 and connects to the section between valve 213 and flow meter 223 of discharge line 205. Valve 214 is provided in discharge line 206.

[0080] Pressure sensor 222 measures the pressure of the processed fluid flowing in discharge line 205, located directly behind the main body 31. That is, pressure sensor 222 can measure the pressure of the processed fluid within the main body 31. Valves 213 and 214 are valves that adjust the opening and closing of the processed fluid flow; when open, they allow the processed fluid to flow downstream into discharge lines 205 and 206; when closed, they prevent the processed fluid from flowing downstream into discharge lines 205 and 206. Flow meter 223 measures the flow rate of the processed fluid flowing in discharge line 205 after the discharge lines 206 merge.

[0081] If the primary pressure of the discharge line 205 exceeds the set pressure, the back pressure valve 224 adjusts its opening to allow fluid to flow to the secondary side, thereby maintaining the primary pressure at the set pressure. For example, the set pressure of the back pressure valve 224 is adjusted by the control unit 7 based on the output of the flow meter 223.

[0082] Furthermore, a temperature sensor 221 is installed within the detection body 31 to detect the temperature of the processed fluid. The output of the temperature sensor 221 is sent to the control unit 7.

[0083] Within the drying unit 18, the IPA liquid between the patterns formed on the wafer W gradually dissolves in the supercritical fluid through contact with a supercritical fluid under high pressure (e.g., 16 MPa), and the spaces between the patterns are gradually replaced by the supercritical fluid. Finally, the spaces between the patterns are filled only with the supercritical fluid.

[0084] Furthermore, after removing the IPA liquid between the patterns, the pressure inside the body 31 is reduced from a high-pressure state to atmospheric pressure, causing the CO2 to change from a supercritical state to a gaseous state, so that the spaces between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, completing the drying process of the wafer W.

[0085] Here, the supercritical fluid has a lower viscosity than a liquid (e.g., IPA liquid), and its ability to dissolve liquids is also improved. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. Therefore, in the drying process using a supercritical fluid, the liquid can be dried without being affected by surface tension. Consequently, according to the embodiment, pattern collapse during the drying process can be suppressed.

[0086] In addition, in the embodiments, an example is shown in which IPA liquid is used as the liquid for preventing desiccation and supercritical CO2 is used as the processing fluid. However, liquids other than IPA can also be used as the liquid for preventing desiccation, and fluids other than supercritical CO2 can also be used as the processing fluid.

[0087] <The first structure of the supply unit>

[0088] Next, refer to Figure 5 The supply unit 119, which is the first structural example of the supply unit 19, will be described. Figure 5 This is a diagram showing the first structural example (supply unit 119) of supply unit 19. Figure 5 The supply unit 119 shown supplies the processing fluid to the three drying units 18A, 18B, and 18C. Drying units 18A-18C are connected to... Figure 4 This corresponds to the drying unit 18 in the text.

[0089] The supply unit 119 has a first supply line 61 connected to the processing fluid supply source 90 and a plurality of second supply lines 162A, 162B, and 162C connected to the first supply line 61. The second supply lines 162A to 162C are connected to... Figure 4 The second supply line 162 corresponds to the second supply line 162. The second supply line 162A is connected to the drying unit 18A, the second supply line 162B is connected to the drying unit 18B, and the second supply line 162C is connected to the drying unit 18C.

[0090] A connection point 62 and a branch point 63 are provided on the first supply line 61. The connection point 62 is located closer to the processing fluid supply source 90 (upstream side) than the branch point 63. The supply unit 119 also has a branch line 163 connecting the branch point 63 and the connection point 62. Second supply lines 162A, 162B, and 162C are connected to the first supply line 61 at multiple branch points 77A and 77B. Specifically, the second supply line 162A is connected to the first supply line 61 at branch point 77A, and the second supply lines 162B and 162C are connected to the first supply line 61 at branch point 77B.

[0091] On the first supply line 61, starting from the upstream side (the side of the fluid supply source 90), a valve 64, a flow regulator 65, a filter 67, a condenser 68, a tank 69, a pump 70, and a pressure sensor 71 are sequentially installed. A branch point 63 is located between the pressure sensor 71 and branch points 77A and 77B, and a connection point 62 is located between the flow regulator 65 and the filter 67. That is, the branch point 63 is located downstream of the pump 70, and the connection point 62 is located upstream of the pump 70.

[0092] Valve 64 is a valve that adjusts the flow of the processing fluid by opening and closing. When open, it allows the processing fluid to flow to the first supply line 61 on the downstream side, and when closed, it prevents the processing fluid from flowing to the first supply line 61 on the downstream side.

[0093] The flow regulator 65 adjusts the flow rate of the processing fluid supplied from the processing fluid supply source 90 to the first supply line 61.

[0094] Filter 67 filters the gaseous processing fluid flowing within the first supply line 61, removing foreign matter contained in the processing fluid. By using filter 67 to remove foreign matter from the processing fluid, it is possible to suppress the generation of particles on the surface of wafer W during the drying process using supercritical fluid.

[0095] The condenser 68 is connected, for example, to a cooling water supply unit (not shown), enabling heat exchange between the cooling water and the gaseous processing fluid. Thus, the condenser 68 cools the gaseous processing fluid flowing within the first supply line 61, generating a liquid processing fluid.

[0096] Tank 69 stores the liquid-state processed fluid generated by condenser 68. Pump 70 delivers the liquid-state processed fluid stored in tank 69 downstream of the first supply line 61. That is, pump 70 creates a circulating flow of processed fluid from tank 69 back to tank 69 via the first supply line 61 and branch line 163. Pressure sensor 71 measures the pressure of the processed fluid flowing in the portion of the first supply line 61 downstream of pump 70. That is, pressure sensor 71 can measure the pressure of the processed fluid at branch point 63.

[0097] A heater 74, a pressure regulating part 140, and a valve 76 are sequentially provided on the upstream side (the side of the branch point 63) of the branch pipeline 163.

[0098] Heater 74 is, for example, a spiral heater. Heater 74 is wound around branch line 163 to heat the liquid-state processing fluid flowing in branch line 163, thereby generating a supercritical processing fluid.

[0099] The pressure regulating unit 140 includes a back pressure valve 41, throttling elements 42, 43, and 44 connected in parallel with the back pressure valve 41, a valve 46 connected in series with the throttling element 42, a valve 47 connected in series with the throttling element 43, and a valve 48 connected in series with the throttling element 44.

[0100] If the primary side pressure of branch line 163 exceeds the set pressure, the back pressure valve 41 adjusts its opening to allow fluid to flow to the secondary side, thereby maintaining the primary side pressure at the set pressure. For example, the set pressure of the back pressure valve 41 is adjusted by the control unit 7 based on the output of the pressure sensor 71.

[0101] The throttling elements 42-44 reduce the flow rate and adjust the pressure of the supercritical process fluid generated by the heater 74. The throttling elements 42-44 allow the pressure-adjusted process fluid to flow downstream into the branch line 163.

[0102] Valves 46-48 are valves that adjust the flow of the processed fluid by opening and closing. When open, they allow the processed fluid to flow into the downstream branch line 163, and when closed, they prevent the processed fluid from flowing into the downstream branch line 163. Valves 46-48 are an example of an on-off valve.

[0103] Valve 76 is a valve that adjusts the flow of the processed fluid by opening and closing. When open, it allows the processed fluid to flow to the downstream branch line 163, and when closed, it prevents the processed fluid from flowing to the downstream branch line 163.

[0104] Within the supply unit 119, valve 73A is located on the second supply line 162A, valve 73B is located on the second supply line 162B, and valve 73C is located on the second supply line 162C. Valves 73A to 73C are valves that adjust the flow of the processed fluid by opening and closing. When open, they allow the processed fluid to flow downstream to the second supply lines 162A to 162C; when closed, they prevent the processed fluid from flowing downstream to the second supply lines 162A to 162C.

[0105] Here, the basic operation of the supply unit 119 will be explained.

[0106] The gaseous processing fluid supplied from the processing fluid supply source 90 to the first supply line 61 is liquefied by the condenser 68. The liquefied processing fluid is stored in tank 69. The liquid processing fluid stored in tank 69 is made into a high-pressure fluid by the pump 70, and a portion of it is supplied to the drying units 18A-18C. The high-pressure fluid supplied to the drying units 18A-18C is in a supercritical state and used for drying. In addition, the remaining portion of the high-pressure fluid flows to the branch line 163 and is heated by the heater 74 to become supercritical. The supercritical processing fluid is depressurized in the pressure regulating section 140 and becomes gas, returning to the first supply line 61 from the connection point 62. In this way, the processing fluid circulates within the supply unit 119.

[0107] Near the branch point 63, a heater 74 is provided in the branch pipeline 163. The heater 74 makes the processed fluid into a supercritical state, so the compressibility of the processed fluid becomes higher, which can suppress the pulsation in the supply unit 119.

[0108] <Specific Operations of the First Structural Example of the Supply Unit>

[0109] Next, the specific operation of the supply unit 119 will be explained. Figures 6-9 This is a diagram showing the specific operations of the supply unit 119.

[0110] exist Figure 6 The diagram shows the state of supply unit 119 when no processing fluid is supplied to the three drying units 18. Figure 6 In the state shown, since no processing fluid is supplied to drying units 18A-18C, valves 73A-73C are closed. Valvees 46-48 are open. Furthermore, although not shown, pump 70 operates, and valve 76 is open.

[0111] In this case, the processing fluid discharged from tank 69 flows from branch point 63 to branch line 163. The processing fluid guided to branch line 163 passes through back pressure valve 41, and through throttling elements 42-44 and valves 46-48 to reach connection point 62, and then returns to tank 69 via filter 67 and condenser 68.

[0112] During this series of operations, the control unit 7 receives the output from the pressure sensor 71 and adjusts the set pressure of the back pressure valve 41 within the pressure adjustment unit 140 so that the pressure of the processed fluid at the branch point 63 becomes the first pressure (e.g., 20.0 MPa). In other words, the control unit 7 controls the pressure adjustment unit 140, thereby controlling the pressure of the processed fluid at the branch point 63 by varying the amount of processed fluid flowing into the branch line 163. Furthermore, the first pressure depends on the performance of the pump 70.

[0113] exist Figure 7 This illustrates the state of supply unit 119 when processing fluid is supplied to one of the three drying units 18, drying unit 18A, but not to the other two drying units 18B and 18C. Figure 7 In the shown state, processing fluid is supplied to drying unit 18A, but not to drying units 18B and 18C. Therefore, valve 73A is in the open state, and valves 73B and 73C are in the closed state. Furthermore, one of valves 46-48, valve 46, is in the closed state, while the other two valves 47 and 48 are in the open state. Additionally, although not shown, pump 70 is activated, and valve 76 is in the open state.

[0114] In this configuration, a portion of the processed fluid discharged from tank 69 is supplied to drying unit 18A via second supply line 162A, while the remainder flows from branch point 63 to branch line 163. The processed fluid directed to branch line 163 passes through back pressure valve 41 and reaches connection point 62 via throttling elements 43, 44 and valves 47, 48, and then returns to tank 69 via filter 67 and condenser 68.

[0115] During this series of actions, the control unit 7 receives the output from the pressure sensor 71 and adjusts the set pressure of the back pressure valve 41 in the pressure adjustment unit 140 so that the pressure of the processing fluid at the branch point 63 becomes the first pressure. That is, the control unit 7 controls the pressure adjustment unit 140 to control the pressure of the processing fluid at the branch point 63 by changing the amount of processing fluid flowing into the branch line 163.

[0116] exist Figure 8 The diagram shows the state of the supply unit 119 when processing fluid is supplied to two of the three drying units 18, 18A and 18B, but not to the other drying unit 18C. Figure 8 In the shown state, processing fluid is supplied to drying units 18A and 18B, but not to drying unit 18C. Therefore, valves 73A and 73B are open, and valve 73C is closed. Furthermore, two of valves 46-48, 46 and 47, are closed, and the remaining valve 48 is open. Additionally, although not shown, pump 70 is activated, and valve 76 is open.

[0117] In this configuration, a portion of the processed fluid discharged from tank 69 is supplied to drying units 18A and 18B via second supply lines 162A and 162B, while the remainder flows from branch point 63 to branch line 163. The processed fluid directed to branch line 163 passes through back pressure valve 41, and then through throttling element 44 and valve 48 to connection point 62, before returning to tank 69 via filter 67 and condenser 68.

[0118] During this series of actions, the control unit 7 receives the output from the pressure sensor 71 and adjusts the back pressure valve 41 in the pressure adjustment unit 140 to make the pressure of the processing fluid at the branch point 63 reach the first pressure. That is, the control unit 7 controls the pressure adjustment unit 140 to control the pressure of the processing fluid at the branch point 63 by changing the amount of processing fluid flowing to the branch line 163. When the number of drying units supplied with processing fluid increases, the pressure of the processing fluid at the branch point decreases, but by adjusting the back pressure valve 41, the pressure of the processing fluid at the branch point is maintained at the first pressure, so that the drying units 18A and 18B can process simultaneously.

[0119] Figure 9 The state of supply unit 119 is shown when processing fluid is supplied to all three drying units 18A-18C of the three drying units 18. Figure 9 In the state shown, processing fluid is supplied to drying units 18A-18C, therefore valves 73A-73C are in the open state. Furthermore, all valves 46-48 are in the closed state. Additionally, although not shown, pump 70 is activated, and valve 76 is in the open state.

[0120] In this case, a portion of the processing fluid discharged from tank 69 is supplied to drying units 18A-18C via the second supply lines 162A-162C, and the remainder flows from branch point 63 to branch line 163. The processing fluid guided to branch line 163 reaches connection point 62 via back pressure valve 41, and then returns to tank 69 via filter 67 and condenser 68.

[0121] During this series of actions, the control unit 7 receives the output from the pressure sensor 71 and adjusts the set pressure of the back pressure valve 41 in the pressure adjustment unit 140 so that the pressure of the processing fluid at the branch point 63 becomes the first pressure. That is, the control unit 7 controls the pressure adjustment unit 140, thereby controlling the pressure of the processing fluid at the branch point 63 by changing the amount of processing fluid flowing to the branch line 163. When the number of drying units supplied with processing fluid increases, the pressure of the processing fluid at the branch point decreases, but by adjusting the back pressure valve 41, the pressure of the processing fluid at the branch point is maintained at the first pressure, so that drying units 18A, 18B, and 18C can process simultaneously.

[0122] Thus, in the substrate processing apparatus 1 including the supply unit 119, the pressure of the processing fluid at the branch point 63 is adjusted according to the number of drying units 18A to 18C from which processing fluid is supplied. Therefore, by adjusting the amount of processing fluid flowing in the first supply line 61 according to the number of drying units 18A to 18C to which processing fluid is supplied, a stable flow rate of processing fluid can be supplied to the drying units 18A to 18C regardless of the number of drying units 18A to 18C supplied simultaneously. Furthermore, within the supply unit 119, the processing fluid circulates through a supercritical state, thereby suppressing pulsation of the processing fluid.

[0123] Furthermore, the structure of the pressure regulating unit 140 is not limited to the example described above. For example, if a back pressure valve with a wider control range is used as the back pressure valve 41, the pressure regulating unit 140 may be composed solely of the back pressure valve 41. Alternatively, back pressure valves may be used in place of throttling elements 42 to 44. In this case, coarse adjustment is performed by the back pressure valve (second back pressure valve) replacing throttling elements 42 to 44, and fine adjustment is performed by the back pressure valve 41 (first back pressure valve).

[0124] Furthermore, the number and combination of drying units 18 to which the processed fluid is supplied are not particularly limited. For example, it is possible to supply processed fluid only to drying unit 18B or drying unit 18C, or to supply processed fluid to drying units 18A and 18C, or to supply processed fluid to drying units 18B and 18C. Furthermore, the number of valves 46-48 that are in the open state and the number of valves that are in the closed state can correspond to the number of drying units 18 to which the processed fluid is supplied; which valve 46-48 is in the open or closed state is arbitrary. Additionally, it is also possible that four or more drying units 18 are connected to the supply unit 119.

[0125] <Second Structure of the Supply Unit>

[0126] Next, refer to Figure 10 The supply unit 219, which is the second structural example of the supply unit 19, will be described. Figure 10 This is a diagram showing the second structural example (supply unit 219) of supply unit 19. Figure 10 The supply unit 219 shown supplies processing fluid to the three drying units 18A, 18B, and 18C. Drying units 18A-18C and... Figure 4 This corresponds to the drying unit 18 in the text.

[0127] Supply unit 219 includes a first supply line 61 connected to a processing fluid supply source 90 and a plurality of second supply lines 262A, 262B, and 262C connected to the first supply line 61. The second supply lines 262A to 262C are connected to... Figure 4The second supply line 162 corresponds to the second supply line 262A. The second supply line 262A is connected to the drying unit 18A, the second supply line 262B is connected to the drying unit 18B, and the second supply line 262C is connected to the drying unit 18C.

[0128] A branch point 278A is provided on the second supply line 262A, a branch point 278B is provided on the second supply line 262B, and a branch point 278C is provided on the second supply line 262C. The supply unit 219 also includes a first branch line 266A connected to the branch point 278A, a first branch line 266B connected to the branch point 278B, and a first branch line 266C connected to the branch point 278C. The supply unit 219 also includes a second branch line 267 connected to the first branch lines 266A to 266C. The first branch lines 266A to 266C are connected to the second branch line 267 at multiple connection points 78A and 78B located on the second branch line 267. Specifically, branch lines 266A and 266B connect to branch line 267 at connection point 78A, and branch line 266C connects to branch line 267 at connection point 78B. Branch line 267 connects to connection point 62. That is, branch line 267 connects branch lines 266A to 266C and connection point 62.

[0129] A connection point 280 is provided on the second branch line 267. The supply unit 219 also includes a third branch line 263 that connects the branch point 63 and the connection point 280.

[0130] Similar to the supply unit 119, the first supply line 61 is provided with a valve 64, a flow regulator 65, a filter 67, a condenser 68, a tank 69, a pump 70 and a pressure sensor 71 in sequence from the upstream side (the side of the processing fluid supply source 90).

[0131] In the second supply line 262A, a throttling device 242A and a pressure sensor 271A are sequentially installed from the upstream side (branch point 77A side) between branch point 77A and valve 73A. In the second supply line 262B, a throttling device 242B and a pressure sensor 271B are sequentially installed from the upstream side (branch point 77B side) between branch point 77B and valve 73B. In the second supply line 262C, a throttling device 242C and a pressure sensor 271C are sequentially installed from the upstream side (branch point 77B side) between branch point 77B and valve 73C.

[0132] Throttling devices 242A to 242C reduce the flow rate of the processed fluid and adjust its pressure. Throttling devices 242A to 242C allow the pressure-adjusted processed fluid to flow downstream through the second supply lines 262A to 262C. Pressure sensors 271A to 271C measure the pressure of the processed fluid flowing within the interval between the throttling devices 242A to 242C and the valves 73A to 73C. Specifically, pressure sensors 271A to 271C can measure the pressure of the processed fluid at the branch points 278A to 278C.

[0133] Back pressure valves 241A-241C and valves 279A-279C are sequentially installed on the upstream side (branch point 278A-278C side) of the first branch pipelines 266A-266C.

[0134] If the primary side pressure of the first branch lines 266A to 266C exceeds the set pressure, the back pressure valves 241A to 241C adjust their opening to allow fluid to flow to the secondary side, thereby maintaining the primary side pressure at the set pressure. For example, the set pressure of the back pressure valves 241A to 241C is adjusted by the control unit 7 based on the output of the pressure sensors 271A to 271C or the output of the pressure sensor 222 in the drying units 18A to 18C.

[0135] Valves 279A to 279C are valves that adjust the flow of the processed fluid by opening and closing. When open, they allow the processed fluid to flow to the downstream first branch line 266A to 266C, and when closed, they prevent the processed fluid from flowing to the downstream first branch line 266A to 266C.

[0136] A heater 74, a throttling device 240, and a valve 76 are sequentially provided on the upstream side (branch point 63 side) of the third branch pipeline 263.

[0137] The throttling element 240 reduces the flow rate and adjusts the pressure of the supercritical process fluid generated by the heater 74. The throttling element 240 allows the pressure-adjusted process fluid to flow downstream to the third branch line 263.

[0138] Other structures and basic movements Figure 5 The same applies to the supply unit 119 shown.

[0139] <Specific Operations of the Second Structural Example of the Supply Unit>

[0140] Next, the specific operation of the supply unit 219 will be explained. In the supply unit 219, when supplying processing fluid to the drying unit 18A, control valves 73A, 241A, and 279A are activated. Furthermore, when supplying processing fluid to the drying unit 18B, control valves 73B, 241B, and 279B are activated; and when supplying processing fluid to the drying unit 18C, control valves 73C, 241C, and 279C are activated.

[0141] The specific operation of the supply unit 219 will be described below based on the drying method (substrate processing method) performed using the drying unit 18A. Figures 11-15 This is a diagram illustrating the specific operations of the supply unit 219. Figures 11-15 As an example, the specific operation of the supply unit 219 when supplying processing fluid to the drying unit 18A is shown. Here, the processing fluid is supplied from the pump 70 at a specified pressure, for example, 20 MPa.

[0142] <Standby Processing>

[0143] Standby processing is the process of stopping the supply of processing fluid after the wafer W is transported to the drying unit 18A. During standby processing, such as... Figure 11 As shown, valve 73A is in the closed state, and valve 279A is in the open state. Furthermore, although not shown, pump 70 is activated, and valve 76 is in the open state. The processing fluid directed to the second supply line 262A is depressurized to a specified pressure, for example, 18 MPa, by throttling device 242A, and flows from branch point 278A to the first branch line 266A. The processing fluid directed to the first branch line 266A reaches connection point 62 via back pressure valve 241A, valve 279A, and the second branch line 267, and then returns to tank 69 via filter 67 and condenser 68.

[0144] During this series of operations, the control unit 7 receives the output from the pressure sensor 271A and adjusts the set pressure of the back pressure valve 241A so that the pressure of the processing fluid flowing downstream of the throttling element 242A in the second supply line 262A becomes a predetermined pressure (e.g., 18 MPa). In other words, the control unit 7 controls the back pressure valve 241A, thereby controlling the pressure of the processing fluid at the branch point 278A by changing the amount of processing fluid flowing to the first branch line 266A.

[0145] <Boost Processing>

[0146] After standby processing, a pressurization process is performed. The pressurization process is a process that increases the pressure inside the main body 31. In the pressurization process, firstly, foreign objects in the supply line 203 and the discharge line 206 are removed simultaneously, and then the pressure inside the main body 31 is increased.

[0147] In the process of removing foreign objects, such as Figure 12 As shown, valves 73A and 279A are in the open state. Additionally, although not shown, pump 70 is activated, and valve 76 is in the open state. The process fluid directed to the second supply line 262A is depressurized to a specified pressure, for example, 18 MPa, by throttling device 242A.

[0148] A portion of the processing fluid directed to the second supply line 262A is supplied to the drying unit 18A via valve 73A, while the remainder flows from branch point 278A to the first branch line 266A. The processing fluid directed to the first branch line 266A reaches the connection point 62 via back pressure valve 241A, valve 279A, and the second branch line 267, and then returns to the tank 69 via filter 67 and condenser 68.

[0149] Furthermore, in the drying unit 18A, valves 211 and 213 are closed, while valves 212 and 214 are open. Therefore, the processing fluid flows to the supply line 203 and the discharge line 206, and is discharged via the discharge line 205. At this time, foreign matter is removed from the supply line 203 and the discharge line 206.

[0150] During this series of operations, the control unit 7 receives the output from the pressure sensor 271A and adjusts the set pressure of the back pressure valve 241A so that the pressure of the processing fluid flowing downstream of the throttling element 242A in the second supply line 262A becomes a predetermined pressure (e.g., 18 MPa). In other words, the control unit 7 controls the back pressure valve 241A, thereby controlling the pressure of the processing fluid at the branch point 278A by changing the amount of processing fluid flowing to the first branch line 266A.

[0151] In the pressurization process after foreign matter removal, such as Figure 13 As shown, valves 73A and 279A are in the open state. Additionally, although not shown, pump 70 is activated, and valve 76 is in the open state. The process fluid directed to the second supply line 262A is depressurized to a specified pressure, for example, 18 MPa, by throttling device 242A.

[0152] A portion of the processing fluid directed to the second supply line 262A is supplied to the drying unit 18A via valve 73A, while the remainder flows from branch point 278A to the first branch line 266A. The processing fluid directed to the first branch line 266A reaches the connection point 62 via back pressure valve 241A, valve 279A, and the second branch line 267, and then returns to the tank 69 via filter 67 and condenser 68.

[0153] Furthermore, in the drying unit 18A, valves 211, 213, and 214 are in the closed state, while valve 212 is in the open state. Consequently, the processing fluid flows into the supply line 203 and is supplied into the main body 31 from the supply port 36, causing the pressure inside the main body 31 to rise.

[0154] During this series of operations, the control unit 7 receives the output from the pressure sensor 271A and adjusts the set pressure of the back pressure valve 241A so that the pressure of the processing fluid flowing downstream of the throttling element 242A in the second supply line 262A becomes a predetermined pressure (e.g., 18 MPa). In other words, the control unit 7 controls the back pressure valve 241A, thereby controlling the pressure of the processing fluid at the branch point 278A by changing the amount of processing fluid flowing to the first branch line 266A.

[0155] Furthermore, during the pressurization process, when the pressure inside the main body 31 reaches a predetermined pressure lower than the set pressure during the flow process, such as... Figure 14 As shown, the control unit 7 receives the output from the pressure sensor 222 instead of the output of the pressure sensor 271A, and adjusts the set pressure of the back pressure valve 241A so that the pressure inside the main body 31 is close to the set pressure during the flow processing.

[0156] <Distribution Processing>

[0157] After pressurization, flow processing is performed. That is, flow processing begins after the pressure within the main body 31 reaches the set pressure for flow processing. Flow processing is a process that uses a supercritical process fluid to dry the liquid film of IPA on the wafer W being transported into the main body 31. During flow processing, such as... Figure 15 As shown, valves 73A and 279A are in the open state. Additionally, although not shown, pump 70 is activated, and valve 76 is in the open state. The process fluid directed to the second supply line 262A is depressurized to a specified pressure, for example, 18 MPa, by throttling device 242A.

[0158] A portion of the processing fluid directed to the second supply line 262A is supplied to the drying unit 18A via valve 73A, while the remainder flows from branch point 278A to the first branch line 266A. The processing fluid directed to the first branch line 266A reaches the connection point 62 via back pressure valve 241A, valve 279A, and the second branch line 267, and then returns to the tank 69 via filter 67 and condenser 68.

[0159] Furthermore, in the drying unit 18A, valves 212 and 214 are in the closed state, while valves 211 and 213 are in the open state. Therefore, the processing fluid flows into the supply line 202 and is supplied into the main body 31 from the supply port 35. Additionally, the processing fluid is discharged from the main body 31 to the outside via valve 213, flow meter 223, and back pressure valve 224.

[0160] During this series of actions, the control unit 7 receives the output from the pressure sensor 222 and adjusts the set pressure of the back pressure valve 241A to maintain the pressure within the main body 31 at the set pressure during flow processing. Furthermore, the control unit 7 receives the output from the flow meter 223 and adjusts the set pressure of the back pressure valve 224 to ensure that the flow rate of the processed fluid flowing in the discharge line 205 is a predetermined flow rate.

[0161] When processing fluid is supplied to drying units 18B and 18C, the back pressure valves 241B and 241C are controlled in the same manner as when processing fluid is supplied to drying unit 18A.

[0162] Thus, in the substrate processing apparatus 1 including the supply unit 219, the pressure of the processing fluid at the branch points 278A-278C is adjusted according to the number of drying units 18A-18C from which processing fluid is supplied. Therefore, regardless of the number of drying units 18A-18C supplied simultaneously, a stable flow rate of processing fluid can be supplied to the drying units 18A-18C. Furthermore, since the back pressure valves 241A-241C can be positioned near the branch points 278A-278C, pulsation can be suppressed.

[0163] Additionally, a portion of the processing fluid flowing in the first supply line 61 flows from the branch point 63 to the third branch line 263. The processing fluid directed to the third branch line 263 is heated by the heater 74 to become supercritical, and then depressurized by the throttling device 240 to become gas. This processing fluid thus reaches a relatively high temperature.

[0164] On the other hand, when the fluid passes through back pressure valves 241A to 241C, the processing fluid changes from a liquid phase to a gas phase. Therefore, due to adiabatic expansion, the temperature drops sharply. Under these conditions, freezing may occur downstream of the back pressure valves 241A to 241C in the first branch lines 266A to 266C. However, as described above, the processing fluid flowing in the third branch line 263 is heated, thus heating the third branch line 263, the second branch line 267, and the first branch lines 266A to 266C as well, thereby suppressing freezing. In other words, the heater 74 can be used to heat the third branch line 263, the second branch line 267, and the first branch lines 266A to 266C using the processing fluid flowing in the third branch line 263.

[0165] The preferred embodiments have been described in detail above, but are not limited to the embodiments described above. Various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0166] For example, the processing fluid used in the drying process can be any fluid other than CO2 (e.g., a fluorine-based fluid), and any fluid capable of removing a liquid film formed on the substrate in a supercritical state can be used as the processing fluid. Furthermore, the liquid for preventing drying is not limited to IPA; any liquid that can be used as a liquid for preventing drying can be used. The substrate to be processed is not limited to the semiconductor wafer W described above, and can also be other substrates such as LCD glass substrates or ceramic substrates.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus includes: The first supply line is connected to the processing fluid supply source; A plurality of second supply lines are connected to the first supply line, and the processing fluid flowing in the first supply line flows into the plurality of second supply lines. A pump is disposed on the first supply line between the processing fluid supply source and the plurality of the second supply lines; Multiple substrate processing units are connected to multiple second supply lines respectively, so that the processing fluid supplied through the second supply lines is in a supercritical state, thereby drying the substrate with liquid adhering to its surface. A branch point is located on the first supply line at a position downstream of the pump; The connection point is located on the first supply line at a position upstream of the pump; Branch lines that connect the branch points and the connection points; A pressure regulating section is provided on the branch pipeline between the branch point and the connection point; and The control unit controls the pressure adjustment unit. The control unit controls the pressure adjustment unit according to the number of substrate processing units supplied with the processing fluid, thereby controlling the pressure of the processing fluid at the branch point by varying the amount of processing fluid flowing into the branch pipeline.

2. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus has a pressure sensor installed on the first supply line. The pressure adjustment unit has a first back pressure valve. The control unit controls the set pressure of the first back pressure valve based on the pressure measured by the pressure sensor.

3. The substrate processing apparatus according to claim 2, wherein, The pressure adjustment unit includes: Multiple throttling elements are connected in parallel with the first back pressure valve; and Multiple on / off valves are connected in series with multiple of the aforementioned throttling elements. The control unit controls the opening and closing of a plurality of the on / off valves according to the number of substrate processing units supplied with the processing fluid.

4. The substrate processing apparatus according to claim 3, wherein, The number of throttling elements is equal to the number of substrate processing units.

5. The substrate processing apparatus according to claim 2, wherein, The pressure adjustment unit includes: Multiple second back pressure valves, which are connected in parallel with the first back pressure valve; and Multiple on / off valves are connected in series with multiple of the second back pressure valves, respectively. The control unit includes a control unit that controls the opening and closing of a plurality of the on / off valves according to the number of the substrate processing units supplied with the processing fluid.

6. The substrate processing apparatus according to claim 5, wherein, The number of the second back pressure valves is equal to the number of the substrate processing units.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein, The substrate processing apparatus further includes a heating unit located upstream of the pressure regulating unit on the branch line, which transforms the processing fluid supplied from the pump into a compressible fluid. The pressure adjustment unit causes a change in the amount of the processing fluid that is converted into a compressible fluid by the heating unit.

8. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The substrate processing apparatus also includes a condenser located upstream of the pump, which transforms the gaseous processing fluid supplied from the processing fluid supply source into a liquid processing fluid. The connection point is located upstream of the condenser.

9. A substrate processing apparatus, wherein, The substrate processing apparatus includes: The first supply line is connected to the processing fluid supply source; A plurality of second supply lines are connected to the first supply line, and the processing fluid flowing in the first supply line flows into the plurality of second supply lines. A pump is disposed on the first supply line between the processing fluid supply source and the plurality of the second supply lines; Multiple substrate processing units are connected to multiple second supply lines respectively, so that the processing fluid supplied through the second supply lines is in a supercritical state, thereby drying the substrate with liquid adhering to its surface. Multiple first branch points are respectively located on multiple second supply pipelines; The first connection point is located on the first supply pipeline; Multiple first branch pipelines, each connected to a multiple first branch point; The second branch line connects the plurality of the first branch lines and the first connection point; Multiple back pressure valves are respectively installed on multiple of the first branch pipelines; and The control unit controls the back pressure valve. The control unit controls the pressure of the processing fluid at the corresponding first branch point by changing the amount of processing fluid flowing to a position downstream of the back pressure valve.

10. The substrate processing apparatus according to claim 9, wherein, The substrate processing apparatus has a plurality of first pressure sensors respectively disposed on the second supply line. The control unit controls the set pressure of the corresponding back pressure valve based on the pressure measured by the first pressure sensor.

11. The substrate processing apparatus according to claim 10, wherein, After the control unit begins supplying the processing fluid to the substrate processing unit, it continues to control the set pressure of the back pressure valve based on the pressure measured by the first pressure sensor until the predetermined conditions are met.

12. The substrate processing apparatus according to claim 11, wherein, The substrate processing section includes: A processing container, to which the processing fluid is supplied from the second supply line, the processing container being used to house the substrate; A discharge pipeline is connected to the processing container; as well as A second pressure sensor is located in the discharge pipeline. When the specified conditions are met, the control unit controls the set pressure of the back pressure valve based on the pressure measured by the corresponding second pressure sensor.

13. The substrate processing apparatus according to any one of claims 9 to 12, wherein, The substrate processing apparatus has: The second branch point is located on the first supply line at a position downstream of the pump; The second connection point is located on the second branch pipeline; The third branch line connects the second branch point and the second connection point; and A heater, located on the third branch line, heats the third branch line, the second branch line, and the plurality of the first branch lines by means of the processing fluid flowing in the third branch line.

14. The substrate processing apparatus according to any one of claims 9 to 12, wherein, The substrate processing apparatus also includes a condenser located upstream of the pump, which transforms the gaseous processing fluid supplied from the processing fluid supply source into a liquid processing fluid. The first connection point is located upstream of the condenser.

15. A substrate processing method, comprising using a substrate processing apparatus, wherein, The substrate processing apparatus includes: The first supply line is connected to the processing fluid supply source; A plurality of second supply lines are connected to the first supply line, and the processing fluid flowing in the first supply line flows into the plurality of second supply lines. A pump is disposed on the first supply line between the processing fluid supply source and the plurality of the second supply lines; Multiple substrate processing units are connected to multiple second supply lines respectively, so that the processing fluid supplied through the second supply lines is in a supercritical state, thereby drying the substrate with liquid adhering to its surface. A branch point is located on the first supply line at a position downstream of the pump; The connection point is located on the first supply line at a position upstream of the pump; Branch lines that connect the branch points and the connection points; and A pressure regulating unit is provided on the branch pipeline between the branch point and the connection point. The substrate processing method includes the following steps: controlling the pressure adjustment unit according to the number of substrate processing units supplied with the processing fluid, thereby controlling the pressure of the processing fluid at the branch point by varying the amount of processing fluid flowing into the branch pipeline.

16. A substrate processing method, comprising using a substrate processing apparatus, wherein, The substrate processing apparatus includes: The first supply line is connected to the processing fluid supply source; A plurality of second supply lines are connected to the first supply line, and the processing fluid flowing in the first supply line flows into the plurality of second supply lines. A pump is disposed on the first supply line between the processing fluid supply source and the plurality of the second supply lines; Multiple substrate processing units are connected to multiple second supply lines respectively, so that the processing fluid supplied through the second supply lines is in a supercritical state, thereby drying the substrate with liquid adhering to its surface. Multiple first branch points are respectively located on multiple second supply pipelines; The first connection point is located on the first supply pipeline; Multiple first branch pipelines, each connected to a multiple first branch point; The second branch line connects the plurality of the first branch lines and the first connection point; and Multiple back pressure valves are respectively installed on multiple of the first branch pipelines. The substrate processing method includes the following steps: controlling the pressure of the processing fluid at the corresponding first branch point by changing the amount of processing fluid flowing to a position downstream of the back pressure valve.

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