存储器件、形成其的方法及包括存储单元的存储器件
By introducing a stress source layer into the ferroelectric storage structure, the problems of leakage current and reduced polarization intensity caused by defects in the wake-up cycle are solved, achieving higher durability and retention.
CN114664833BActive Publication Date: 2026-07-17TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2021-07-01
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing ferroelectric memory structures are prone to defects during wake-up cycles, leading to increased leakage current and reduced residual polarization, which affects the durability and retention of memory devices.
Method used
A stress source layer is introduced between the ferroelectric layer and the electrode. The stress source layer has a larger coefficient of thermal expansion than the ferroelectric layer to apply tensile stress to promote the formation of orthorhombic phases and reduce the formation of dead layers by forming inert oxides.
Benefits of technology
This improved the residual polarization intensity of the ferroelectric layer, reduced the number of wake-up cycles, lowered leakage current, and enhanced the durability and retention of the storage device.
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Figure CN114664833B_ABST
Abstract
在一些实施例中，本公开涉及一种存储器件、形成其的方法及包括存储单元的存储器件，所述存储器件包括半导体衬底、设置在半导体衬底之上的第一电极、设置在第一电极与半导体衬底之间的铁电层及将第一电极与铁电层隔开的第一应力源层。第一应力源层具有比铁电层的热膨胀系数大的热膨胀系数。
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