光检测器
By introducing a magnification region, separation region, hole accumulation region, and gate electrode into the photodetector, the problem of low photon detection efficiency is solved, and higher detection sensitivity and noise suppression effect are achieved.
CN114667606BActive Publication Date: 2026-07-17SONY SEMICON SOLUTIONS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SONY SEMICON SOLUTIONS CORP
- Filing Date
- 2020-12-18
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The photon detection efficiency (PDE) of existing photodetectors needs further improvement, which affects detection sensitivity.
Method used
By introducing specific structural designs for amplification region, separation region, hole accumulation region, and gate electrode in the photodetector, carrier collection efficiency is improved and noise is suppressed by reflecting unused light and controlling the potential gradient using the negative bias voltage of the gate electrode.
Benefits of technology
It improves photon detection efficiency (PDE), enhances the detection sensitivity of the photodetector, and effectively suppresses the generation of post-noise.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN114667606B_ABST
Abstract
一种光检测器，包括：放大区域，其包括设置于半导体层中的深度方向上的PN结，并且电连接到阴极；分离区域，其界定了包括所述放大区域的像素区域；空穴累积区域，其沿着所述分离区域的侧面设置着，并且电连接到阳极；和栅极电极，其设置于所述放大区域和所述空穴累积区域之间的区域中，并且层叠在所述半导体层上方，所述栅极电极和所述半导体层之间夹着栅极绝缘膜。
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