Light-emitting display panel

Abstract

A light-emitting display panel includes: a driving transistor; and a storage capacitor including at least three electrodes to reduce the size of the driving transistor or the storage capacitor. The light-emitting display panel includes: a light-emitting element; a driving transistor connected to the light-emitting element; and a storage capacitor connected to the gate and a first electrode of the driving transistor. The driving transistor includes: a light-shielding electrode serving as the gate of the driving transistor; a buffer covering the light-shielding electrode; an active portion disposed on an upper surface of the buffer, forming a first electrode, a second electrode, and a semiconductor portion of the driving transistor; a gate insulating layer covering the active portion; and a gate electrode disposed on the upper surface of the gate insulating layer and connected to the light-shielding electrode.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2020-0183376, filed on December 24, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to a light-emitting display panel. Background Technology

[0004] The pixels that make up a light-emitting display panel include light-emitting elements, transistors, and capacitors for driving the light-emitting elements.

[0005] To address the issue of degraded light-emitting elements, the number and size of transistors placed in the pixels have been increased. Additionally, the size of the capacitors has been increased to improve their charging efficiency.

[0006] Increasing the size of a transistor means increasing the size of the conductors (electrodes) that make up the transistor, and increasing the size of a capacitor means increasing the size of the conductors that make up the capacitor.

[0007] Considering factors such as conductivity, the conductors that make up transistors and capacitors are formed of opaque conductors. Therefore, as the size of the conductors set in a pixel increases, the size of the opening through which light generated from the light-emitting element set in the pixel is emitted to the outside decreases. Summary of the Invention

[0008] In view of the above problems, this disclosure has been made, and the purpose of this disclosure is to provide a light-emitting display panel in which the driving transistor is configured as a dual-gate type or a storage capacitor is configured with at least three electrodes, so as to reduce the size of the driving transistor or the storage capacitor.

[0009] In one embodiment, a light-emitting display panel includes: a light-emitting element disposed in a pixel; a driving transistor connected to the light-emitting element; and a storage capacitor connected to the gate and a first electrode of the driving transistor. The driving transistor includes a light-shielding electrode on a substrate, and the light-shielding electrode serves as the gate of the driving transistor. The light-shielding electrode of the driving transistor is covered by a buffer, and an active portion including a first electrode, a second electrode, and a semiconductor portion is disposed on the upper surface of the buffer. A gate insulating layer covers at least a portion of the active portion, and a gate electrode is disposed on the upper surface of the gate insulating layer, connected to the light-shielding electrode, and serves as the gate of the driving transistor. The electrode of the storage capacitor is connected to at least one of the light-shielding electrode and the gate electrode.

[0010] In one embodiment, a light-emitting display panel includes: light-emitting elements disposed in pixels; driving transistors connected to the light-emitting elements; and storage capacitors connected to a gate electrode and a first electrode of the driving transistors. The storage capacitor includes at least three electrodes disposed in different layers thereof.

[0011] In one embodiment, a light-emitting display panel includes: a light-emitting element; a driving transistor for driving the light-emitting element; a light-shielding electrode on a substrate; and a storage capacitor electrically connected to the driving transistor. The driving transistor includes an active portion comprising a first electrode, a second electrode, and a semiconductor portion. A gate insulating layer is on the active portion, and a gate electrode is disposed on at least a portion of the gate insulating layer. The storage capacitor includes at least one capacitor electrode extending from the first electrode of the active portion of the driving transistor, the gate electrode of the driving transistor, or the light-shielding electrode.

[0012] In one embodiment, a light-emitting display panel includes: a light-emitting element; a driving transistor for driving the light-emitting element; a light-shielding electrode on a substrate; and a storage capacitor. The driving transistor includes an active portion comprising a first electrode, a second electrode, and a semiconductor portion. At least a portion of a gate insulating layer is on the active portion, and a gate electrode is disposed on a portion of the gate insulating layer. The storage capacitor includes an active capacitor electrode spaced apart from the active portion of the driving transistor and a gate capacitor electrode on the active capacitor electrode to form a first capacitor, wherein the gate capacitor electrode extends to contact a portion of the active portion of the driving transistor through a contact hole in the gate insulating layer.

[0013] In addition to the purposes of this disclosure as stated above, those skilled in the art will clearly understand from the following description of this disclosure additional purposes and features.

[0014] According to one aspect of this disclosure, the above and other objectives can be achieved by providing a light-emitting display panel comprising: a light-emitting element disposed in a pixel; a driving transistor connected to the light-emitting element; and a storage capacitor disposed between the gate of the driving transistor and a first electrode, wherein the driving transistor comprises: a light-shielding electrode disposed on a substrate and serving as the gate of the driving transistor; a buffer covering the light-shielding electrode; an active portion disposed on the upper surface of the buffer, forming a first electrode, a second electrode, and a semiconductor portion of the driving transistor; a gate insulating layer covering the active portion; and a gate electrode disposed on the upper surface of the gate insulating layer, connected to the light-shielding electrode, and serving as the gate of the driving transistor. Attached Figure Description

[0015] The above and other objects, features and advantages of this disclosure will become more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0016] Figure 1 This is an exemplary view showing the structure of a light-emitting display device using a light-emitting display panel according to an embodiment of the present disclosure;

[0017] Figure 2 This is an exemplary view showing the structure of pixels applied to a light-emitting display panel according to an embodiment of the present disclosure;

[0018] Figure 3 This is an exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure;

[0019] Figure 4 This illustrates an implementation method according to the present disclosure. Figure 3 An enlarged exemplary view of region X shown;

[0020] Figures 5A to 5H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 3 An exemplary view of the method of the pixels shown;

[0021] Figure 6A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 3 and Figure 4 An exemplary view of the cross section taken by line A-A' shown;

[0022] Figure 6B This illustrates an implementation method according to the present disclosure. Figure 6A An exemplary view of the transistors and capacitors in the cross-section shown;

[0023] Figure 7 This is another exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure;

[0024] Figure 8 This illustrates an implementation method according to the present disclosure. Figure 7 An enlarged exemplary view of region Y shown;

[0025] Figures 9A to 9H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 7 An exemplary view of the method of the pixels shown;

[0026] Figure 10A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 7 and Figure 8An exemplary view of the cross section taken by line B-B' shown;

[0027] Figure 10B This illustrates an implementation method according to the present disclosure. Figure 10A An exemplary view of the transistors and capacitors in the cross-section shown;

[0028] Figure 11 This is another exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure;

[0029] Figure 12 This illustrates an implementation method according to the present disclosure. Figure 11 An enlarged exemplary view of region Z shown;

[0030] Figures 13A to 13H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 11 An exemplary view of the method of the pixels shown;

[0031] Figure 14A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 11 and Figure 12 An exemplary view of the cross-section taken by line C-C' shown; and

[0032] Figure 14B This illustrates an implementation method according to the present disclosure. Figure 14A An exemplary view of the transistors and capacitors in the cross-section shown. Detailed Implementation

[0033] The advantages and features of this disclosure and its implementation methods will be illustrated by the following embodiments described with reference to the accompanying drawings. However, this disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is defined only by the scope of the claims.

[0034] In the accompanying drawings, the same or similar elements are indicated by the same reference numerals, even if the same or similar elements are depicted in different drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts.

[0035] The shapes, dimensions, ratios, angles, and numbers disclosed in the accompanying drawings to describe embodiments of this disclosure are merely examples, and therefore, this disclosure is not limited to the details shown. Throughout the specification, the same reference numerals refer to the same elements. In the following description, detailed descriptions of relevant known functions or configurations will be omitted where it is determined that such descriptions would unnecessarily obscure the essential points of this disclosure. Where the terms “comprising,” “having,” and “including” are used as described in this specification, an additional part may be added unless “only” is used. Singular terms may include plural forms unless the opposite is true.

[0036] When interpreting components, they are interpreted as including a range of error, even if not explicitly described.

[0037] When describing positional relationships, for example, when the positional relationship is described as 'on ~', 'above ~', 'below ~', and 'immediately following ~', one or more parts may be arranged between two other parts, unless 'exactly' or 'directly' is used.

[0038] When describing temporal relationships, such as when time sequence is described as 'after', 'after', 'immediately after', and 'before', discontinuous cases can be included unless 'exactly' or 'directly' is used.

[0039] It should be understood that the term "at least one" includes all combinations relating to any one item. For example, "at least one of the first element, the second element, and the third element" can include all combinations of two or more elements selected from the first element, the second element, and the third element, as well as each of the first element, the second element, and the third element.

[0040] It should be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of this disclosure.

[0041] Features of the various embodiments of this disclosure may be coupled or combined with each other in part or in whole, and may operate differently from each other and are technically driven, as will be fully understood by those skilled in the art. Embodiments of this disclosure may be performed independently of each other or may be performed together in an interdependent relationship.

[0042] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0043] Figure 1This is an exemplary view showing the structure of a light-emitting display device that applies a light-emitting display panel according to an embodiment of the present disclosure. Figure 2 This is an exemplary view showing the structure of pixels applied to a light-emitting display panel according to an embodiment of the present disclosure.

[0044] The light-emitting display device according to this disclosure can be used to construct various electronic devices. These electronic devices may include, for example, smartphones, tablet PCs, televisions, monitors, etc.

[0045] like Figure 1 As shown, the light-emitting display device according to this disclosure includes: a light-emitting display panel 100, which includes a display area 102 on which images are output and a non-display area 103 disposed outside the display area 102; a gate driver 200 for supplying gate signals to gate lines GL1 to GLg disposed in the display area 102 of the light-emitting display panel 100; a data driver 300 for supplying data voltage to data lines DL1 to DLd disposed in the light-emitting display panel 100; and a controller 400 for controlling the driving of the gate driver 200 and the data driver 300.

[0046] First, the light-emitting display panel 100 includes a display area 102 and a non-display area 103. The display area 102 is provided with gate lines GL1 to GLg, data lines DL1 to DLd, voltage supply line PLA, and pixels 101.

[0047] like Figure 2 As shown, the pixel 101 disposed in the light-emitting display panel 100 may include a light-emitting element ED, a switching transistor Tsw1, a storage capacitor Cst, a driving transistor Tdr, and a sensing transistor Tsw2. That is, the pixel 101 may include a pixel driving unit PDU and a light-emitting unit, wherein the pixel driving unit PDU may include a switching transistor Tsw1, a capacitor Cst, a driving transistor Tdr, and a sensing transistor Tsw2, and the light-emitting unit may include a light-emitting element ED.

[0048] The light-emitting element (ED) may include any one of an organic light-emitting layer, an inorganic light-emitting layer, and a quantum dot light-emitting layer, or may include a deposition structure or a hybrid structure of an organic light-emitting layer (or an inorganic light-emitting layer) and a quantum dot light-emitting layer.

[0049] The switching transistor Tsw1, constituting the pixel driving unit (PDU), can be turned on or off by the gate signal GS supplied to the gate line GL. When the switching transistor Tsw1 is on, the data voltage Data supplied through the data line DL is supplied to the driving transistor Tdr. A first voltage EVDD can be supplied to the driving transistor Tdr and the light-emitting element ED through the first voltage supply line PLA. A second voltage EVSS is supplied to the light-emitting element ED through the second voltage supply line PLB. The sensing transistor Tsw2 can be turned on or off by a sensing control signal supplied through the sensing control line. In some embodiments, the sensing control line can be provided separately from the gate line GL. Figure 2 In the illustrated embodiment, the gate line GL is a sensing control line. In this case, the gate signal GS can be a sensing control signal. The sensing line SL can be connected to the sensing transistor Tsw2. The reference voltage Vref can be supplied to pixel 101 through the sensing line SL, and the sensing signal related to the characteristic change of the driving transistor Tdr can be transmitted to the sensing line SL through the sensing transistor Tsw2.

[0050] The light-emitting display panel 100 according to this disclosure can be formed on... Figure 2 The structure shown is not limited to this. Therefore, in addition to Figure 2 In addition to the structure shown, the light-emitting display panel 100 according to this disclosure can be modified in various forms.

[0051] In the light-emitting display panel 100, signal lines are formed for supplying various signals to the pixel driving unit PDU disposed in the pixel 101.

[0052] For example, in including Figure 2 In the light-emitting display panel 100 of pixel 101 shown, the signal lines may include gate line GL, data line DL, first voltage supply line PLA, second voltage supply line PLB, and sensing line SL.

[0053] The data driver 300 can be disposed in an on-film chip attached to the light-emitting display panel 100, and can also be connected to a main substrate having a controller 400. In this case, a wire for electrically connecting the data driver 300 to the light-emitting display panel 100 can be disposed in the on-film chip. For this purpose, the wire is electrically connected to pads disposed in the main substrate and the light-emitting display panel 100. The main substrate is electrically connected to an external substrate on which an external system is mounted.

[0054] The data driver 300 can be directly mounted on the light-emitting display panel 100 and then electrically connected to the main substrate.

[0055] However, the data driver 300 can be integrated with the controller 400 into a single integrated circuit. This integrated circuit can be disposed on an on-film chip or directly mounted on the light-emitting display panel 100.

[0056] The data driver 300 can receive a sensing signal related to the characteristic change of the driving transistor Tdr set in the light-emitting display panel 100 from the light-emitting display panel 100, and transmit the sensing signal to the controller 400.

[0057] Next, an external system is used to drive the controller 400 and the electronic device. For example, when the electronic device is a smartphone, the external system can receive various voice, image, and text information via a wireless communication network and transmit the received image information to the controller 400. The image information can be input image data.

[0058] The gate driver 200 can then be configured as an integrated circuit and mounted on the non-display area 103, or it can be directly embedded in the non-display area 103 using an in-panel gate (GIP) scheme. When using the in-panel gate scheme, the transistors constituting the gate driver 200 can be disposed in the non-display area 103 using the same process as the transistors disposed in the corresponding pixels 101 of the display area 102.

[0059] When a gate pulse generated by the gate driver 200 is supplied to the gate of the switching transistor Tsw1 disposed in the pixel 101, the switching transistor Tsw1 is turned on. When a gate cutoff signal is supplied to the switching transistor Tsw1, the switching transistor Tsw1 is turned off. The gate signal GS supplied to the gate line GL includes the gate pulse and the gate cutoff signal.

[0060] Finally, the controller 400 can realign the input image data transmitted from the external system using a timing synchronization signal transmitted from the external system. Furthermore, the controller 400 may include: a data aligner for supplying realigned image data Data to the data driver 300; a control signal generator for generating a gate control signal GCS and a data control signal DCS using the timing synchronization signal; an input unit for receiving the timing synchronization signal and the input image data transmitted from the external system and transmitting them to the data aligner and the control signal generator; and an output unit for outputting the image data Data generated from the data aligner and the control signals DCS and GCS generated from the control signal generator to the data driver 300 or the gate driver 200.

[0061] In the following text, having Figure 2 The light-emitting display panel 100 of pixel 101 shown will be described as an example of a light-emitting display panel 100 according to this disclosure.

[0062] Figure 3 This is an exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure. Figure 4 This illustrates an implementation method according to the present disclosure. Figure 3 An enlarged exemplary view of region X shown. Figures 5A to 5H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 3 An exemplary view of the pixel method shown. Figure 6A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 3 and Figure 4 An exemplary view of the cross section taken by line A-A' shown. Figure 6B This illustrates an implementation method according to the present disclosure. Figure 6A An exemplary view of the transistors and capacitors in the cross-section shown.

[0063] like Figure 2 and Figure 3 As shown, the light-emitting display panel according to this disclosure includes: a light-emitting element ED disposed in a pixel; a driving transistor Tdr connected to the light-emitting element ED; and a storage capacitor Cst disposed between the gate of the driving transistor Tdr and the first electrode of the driving transistor.

[0064] Reference Figures 2 to 6B Describes a method for manufacturing a light-emitting display panel.

[0065] First, such as Figure 5A As shown, a light-shielding layer is provided on the upper surface of the substrate 111.

[0066] The light-shielding layer may include a light-shielding electrode 112a, a first light-shielding capacitor electrode 112b, a first voltage supply line PLA, and various other electrodes.

[0067] Next, the light-shielding layer is covered by buffer 113.

[0068] Next, as Figure 5B As shown, an active layer is provided on the upper surface of the buffer 113.

[0069] The active layer may include an active portion 114, a first active capacitor electrode 115a, and various other electrodes.

[0070] Next, as Figure 5C As shown, the active layer is covered by the gate insulating layer 117.

[0071] In this case, a first contact hole CH1, a second contact hole CH2, and various other contact holes are formed in the gate insulating layer 117.

[0072] Next, as Figure 5D As shown, a gate layer is disposed on the upper surface of the gate insulating layer 117.

[0073] The gate layer may include a gate electrode 118a, a first gate capacitor electrode 118b, a first contact hole electrode 118_1, and various other electrodes.

[0074] Next, the gate layer is covered by a planarization layer.

[0075] Next, as Figure 5E As shown, a color filter layer is disposed on the upper surface of the planarization layer.

[0076] For example, the color filter layer may include a red color filter 151, a blue color filter 152, a white color filter 153, and a green color filter 154.

[0077] Next, as Figure 5F As shown, the color filter layer is covered by an outer coating 160.

[0078] In this configuration, a pixel contact hole 161 for connecting the first electrode 114a of the driving transistor Tdr to the anode electrode can be formed in the outer coating 160. The pixel contact hole 161 can pass through the planarization layer and the gate insulating layer 117.

[0079] Next, as Figure 5G As shown, an anode electrode layer is disposed on the upper surface of the outer coating 160.

[0080] The anode electrode layer may include a red anode electrode 171 disposed in a red pixel, a blue anode electrode 172 disposed in a blue pixel, a white anode electrode 173 disposed in a white pixel, and a green anode electrode 174 disposed in a green pixel.

[0081] Next, as Figure 5H As shown, a dam 180 is provided on the upper surface of the anode electrode layer.

[0082] The dam 180 is formed around the outer periphery of the anode electrodes 171 to 174 that constitute the anode electrode layer. Therefore, the anode electrodes 171 to 174 are exposed through the area where the dam 180 is not provided.

[0083] Next, a light-emitting layer is formed on the upper surface of the anode electrodes 171 to 174.

[0084] Next, a cathode electrode is placed in the display area of ​​the substrate to cover the light-emitting layer.

[0085] Finally, the cathode electrode is covered by an encapsulation layer.

[0086] The features of the light-emitting display panel manufactured according to this disclosure using the above-described manufacturing process will now be described.

[0087] like Figure 6A As shown, the driving transistor Tdr includes: a light-shielding electrode 112a serving as the gate of the driving transistor and disposed in a substrate 111; a buffer 113 covering the light-shielding electrode 112a; an active portion 114 disposed on the upper surface of the buffer 113, forming a first electrode 114a, a second electrode 114b, and a semiconductor portion 114c of the driving transistor Tdr; a gate insulating layer 117 covering the active portion 114; and a gate electrode 118a disposed on the upper surface of the gate insulating layer 117, connected to the light-shielding electrode 112a, and serving as the gate of the driving transistor Tdr. The driving transistor Tdr has a dual-gate structure, wherein the gate electrode 118a serves as the first gate, and the light-shielding electrode 112a serves as the second gate.

[0088] The storage capacitor Cst includes: a first active capacitor electrode 115a extending from a first electrode 114a of the active portion 114; a first gate capacitor electrode 118b extending from the gate electrode 118a and overlapping with the first active capacitor electrode 115a; and a first light-shielding capacitor electrode 112b extending from the light-shielding electrode 112a and overlapping with the first active capacitor electrode 115a. A gate insulating layer 117 on the active portion 114 extends to cover the side surface of the first active capacitor electrode 115a of the storage capacitor Cst.

[0089] The first electrode 114a of the driving transistor Tdr and the first active capacitor electrode 115a are integrally formed. That is, as Figure 6A and Figure 6B As shown, the first electrode 114a and the first active capacitor electrode 115a are formed continuously and are made of the same material.

[0090] The gate electrode 118a that forms the gate of the driving transistor Tdr and the first gate capacitor electrode 118b that forms the storage capacitor Cst are integrally formed.

[0091] Each of the first electrode 114a and the first active capacitor electrode 115a includes: a first reference electrode 115a1 extending from the semiconductor portion 114c of the active portion 114; and a second reference electrode 115a2 disposed on the upper surface of the first reference electrode 115a1.

[0092] The first reference electrode 115a1 can be formed of the same material as the semiconductor portion 114c. For example, the first reference electrode 115a1 can be IGZO composed of indium, gallium, zinc and oxygen.

[0093] The second reference electrode 115a2 can be formed of a metallic material. For example, the second reference electrode 115a2 can be an alloy of molybdenum and titanium (MoTi).

[0094] The first gate capacitor electrode 118b and the first light-shielding capacitor electrode 112b are connected to each other through the second contact hole CH2.

[0095] The storage capacitor Cst comprises at least three electrodes disposed in its various layers, which are different from each other.

[0096] For example, such as Figure 6B As shown, the storage capacitor Cst includes a first (1-1) capacitor Cst1_1 composed of a first active capacitor electrode 115a and a first gate capacitor electrode 118b, wherein the first gate capacitor electrode 118b extends from the gate electrode 118a of the driving transistor Tdr to overlap with the first active capacitor electrode 115a. The storage capacitor Cst also includes a second (1-2) capacitor Cst1_2 composed of the first active capacitor electrode 115a and a first light-shielding capacitor electrode 112b, wherein the first light-shielding capacitor electrode 112b extends from the light-shielding electrode 112a to overlap with the first active capacitor electrode 115a.

[0097] According to the present disclosure as described above, a light-shielding electrode 112a and a gate electrode 118a, disposed in their respective layers which are different from each other, are used as the gate of the driving transistor Tdr. That is, the semiconductor portion 114c of the driving transistor Tdr applied in the present disclosure can be driven by the light-shielding electrode 112a and the gate electrode 118a.

[0098] Therefore, the driving transistor Tdr used in this disclosure includes only one of the light-shielding electrode 112a and the gate electrode 118a used as the gate of the driving transistor Tdr, and can have the same or similar performance as a conventional driving transistor, which has a larger size than the driving transistor used in this disclosure.

[0099] Therefore, although the driving transistors used in this disclosure are formed with a smaller size compared to conventional driving transistors, they can have the same or similar performance as conventional driving transistors. Thus, according to this disclosure, the size of the electrodes constituting the driving transistor Tdr can be reduced, thereby increasing the aperture ratio of the light-emitting display panel.

[0100] According to the present disclosure as described above, the storage capacitor Cst includes a first (1-1) capacitor Cst1_1 and a second (1-2) capacitor Cst1_2 connected in parallel. Therefore, compared to a conventional storage capacitor formed by two electrodes facing each other, the storage capacitor Cst applied in this disclosure can be formed with a smaller size than a conventional capacitor, achieving the same or similar capacitance. Therefore, the size of the opening can be increased as much as the size of the storage capacitor is reduced.

[0101] Additionally, the (1-1) capacitor Cst1_1 includes a first active capacitor electrode 115a and a first gate capacitor electrode 118b, and the (1-2) capacitor Cst1_2 includes a first active capacitor electrode 115a and a first light-shielding capacitor electrode 112b.

[0102] In this configuration, the gate electrode 118a, the first gate capacitor electrode 118b, the first light-shielding capacitor electrode 112b, and the light-shielding electrode 112a are electrically connected to each other, and the first electrode 114a and the first active capacitor electrode 115a are electrically connected to each other.

[0103] Therefore, the first terminals of capacitor (1-1) Cst1_1 and capacitor (1-2) Cst1_2 are connected together to the first electrode 114a, and the second terminals of capacitor (1-1) Cst1_1 and capacitor (1-2) Cst1_2 are connected together to the gate electrode 118a.

[0104] In other words, the (1-1) capacitor Cst1_1 and the (1-2) capacitor Cst1_2 are connected in parallel with each other. Therefore, the capacitance of the storage capacitor Cst, which includes the (1-1) capacitor Cst1_1 and the (1-2) capacitor Cst1_2, can be greater than the capacitance of the storage capacitor which only has one of the (1-1) capacitor Cst1_1 and the (1-2) capacitor Cst1_2.

[0105] Therefore, the storage capacitor Cst used in this disclosure can be formed with a size smaller than that of a conventional capacitor, resulting in a capacitance that is the same or similar to that of a conventional capacitor. Thus, the size of the opening in the light-emitting display panel 100 can be increased as much as the size of the storage capacitor is reduced.

[0106] Figure 7 This is another exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure. Figure 8 This illustrates an implementation method according to the present disclosure. Figure 7 An enlarged exemplary view of region Y shown. Figures 9A to 9H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 7 An exemplary view of the pixel method shown. Figure 10A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 7 and Figure 8 An exemplary view of the cross section taken by line B-B' shown. Figure 10B This illustrates an implementation method according to the present disclosure. Figure 10A An exemplary view of the transistors and capacitors in the cross-section shown. In the following description, descriptions with reference to [reference] will be omitted or briefly described. Figures 1 to 6B The descriptions are the same as or similar to the descriptions.

[0107] Reference Figures 7 to 10B A method for manufacturing another light-emitting display panel according to the present disclosure is described.

[0108] First, such as Figure 9A As shown, a light-shielding layer is provided on the upper surface of the substrate 111.

[0109] The light-shielding layer may include a light-shielding electrode 112a, a second light-shielding capacitor electrode 112c, a first voltage supply line PLA, and various other electrodes.

[0110] Next, the light-shielding layer is covered by buffer 113.

[0111] Next, as Figure 9B As shown, an active layer is provided on the upper surface of the buffer 113.

[0112] The active layer may include an active portion 114, a second active capacitor electrode 115b, and various other electrodes.

[0113] Next, as Figure 9C As shown, the active layer is covered by the gate insulating layer 117.

[0114] In this case, a third contact hole CH3, a fourth contact hole CH4, and various other contact holes are formed in the gate insulating layer 117.

[0115] Next, as Figure 9D As shown, a gate layer is disposed on the upper surface of the gate insulating layer 117.

[0116] The gate layer may include a gate electrode 118a, a second gate capacitor electrode 118c, a third contact hole electrode 118_2, and various other electrodes.

[0117] Next, the gate layer is covered by a planarization layer.

[0118] Next, as Figure 9E As shown, a color filter layer is disposed on the upper surface of the planarization layer.

[0119] For example, the color filter layer may include a red color filter 151, a blue color filter 152, a white color filter 153, and a green color filter 154.

[0120] Next, as Figure 9F As shown, the color filter layer is covered by an outer coating 160.

[0121] In this configuration, a pixel contact hole 161 for connecting the first electrode 114a of the driving transistor Tdr to the anode electrode can be formed in the outer coating 160. The pixel contact hole 161 can pass through the planarization layer and the gate insulating layer 117.

[0122] Next, as Figure 9G As shown, an anode electrode layer is disposed on the upper surface of the outer coating 160.

[0123] The anode electrode layer may include a red anode electrode 171 disposed in a red pixel, a blue anode electrode 172 disposed in a blue pixel, a white anode electrode 173 disposed in a white pixel, and a green anode electrode 174 disposed in a green pixel.

[0124] Next, as Figure 9H As shown, a dam 180 is provided on the upper surface of the anode electrode layer.

[0125] The dam 180 is formed around the outer periphery of the anode electrodes 171 to 174 that constitute the anode electrode layer. Therefore, the anode electrodes 171 to 174 are exposed through the area where the dam 180 is not provided.

[0126] Next, a light-emitting layer is formed on the upper surface of the anode electrodes 171 to 174.

[0127] Next, a cathode electrode is placed in the display area of ​​the substrate to cover the light-emitting layer.

[0128] Finally, the cathode electrode is covered by an encapsulation layer.

[0129] The features of the light-emitting display panel manufactured according to this disclosure using the above-described manufacturing process will now be described.

[0130] like Figure 10A As shown, the driving transistor Tdr includes: a light-shielding electrode 112a serving as the gate of the driving transistor and disposed in the substrate 111; a buffer 113 covering the light-shielding electrode 112a; an active portion 114 disposed on the upper surface of the buffer 113, forming a first electrode 114a, a second electrode 114b, and a semiconductor portion 114c of the driving transistor Tdr; a gate insulating layer 117 covering the active portion 114; and a gate electrode 118a disposed on the upper surface of the gate insulating layer 117, connected to the light-shielding electrode 112a, and serving as the gate of the driving transistor Tdr.

[0131] The storage capacitor Cst includes: a second active capacitor electrode 115b spaced apart from the active portion 114; a second gate capacitor electrode 118c connected to the first electrode 114a of the driving transistor, disposed on the upper surface of the gate insulating layer 117 and overlapping with the second active capacitor electrode 115b; and a second light-shielding capacitor electrode 112c spaced apart from the light-shielding electrode 112a and overlapping with the second active capacitor electrode 115b.

[0132] The first electrode 114a of the driving transistor Tdr and the second active capacitor electrode 115b are spaced apart from each other and are formed as follows: Figure 10A and Figure 10B The same shape as shown.

[0133] The gate electrode 118a that forms the gate of the driving transistor Tdr and the second gate capacitor electrode 118c that forms the storage capacitor Cst are spaced apart from each other and formed in the same layer.

[0134] The second active capacitor electrode 115b includes a first reference electrode 115b1 spaced apart from the semiconductor portion 114c of the active portion 114 and a second reference electrode 115b2 disposed on the upper surface of the first reference electrode 115b1. The first electrode 114a may be formed of a dual structure of the same material as the first reference electrode 115b1 and the same material as the second reference electrode 115b2.

[0135] The first reference electrode 115b1 can be formed of the same material as the semiconductor portion 114c. For example, the first reference electrode 115b1 can be IGZO composed of indium, gallium, zinc and oxygen.

[0136] The second reference electrode 115b2 can be formed of a metallic material. For example, the second reference electrode 115b2 can be an alloy of molybdenum and titanium (MoTi).

[0137] The second gate capacitor electrode 118c and the first electrode 114a are connected to each other through the fourth contact hole CH4 in the gate insulating layer 117.

[0138] The second active capacitor electrode 115b is connected to the light-shielding electrode 112a or the gate electrode 118a, and the second light-shielding capacitor electrode 112c is connected to the second gate capacitor electrode 118c.

[0139] The storage capacitor Cst comprises at least three electrodes disposed in its various layers, which are different from each other.

[0140] For example, such as Figure 10BAs shown, the storage capacitor Cst includes a second (2-1) capacitor Cst2_1 composed of a second active capacitor electrode 115b and a second gate capacitor electrode 118c made of the same material as the gate electrode 118a of the driving transistor Tdr, on the same layer as the gate electrode 118a of the driving transistor Tdr. The second active capacitor electrode 115b is spaced apart from the active portion 114 by a gate insulating layer 117. The storage capacitor Cst also includes a second (2-2) capacitor Cst2_2 composed of the second active capacitor electrode 115b and a second light-shielding capacitor electrode 112c.

[0141] According to the present disclosure as described above, a light-shielding electrode 112a and a gate electrode 118a, disposed in their respective layers which are different from each other, are used as the gate of the driving transistor Tdr. That is, the semiconductor portion 114c of the driving transistor Tdr applied in the present disclosure can be driven by the light-shielding electrode 112a and the gate electrode 118a.

[0142] Therefore, the driving transistor Tdr used in this disclosure includes only one of the light-shielding electrode 112a and the gate electrode 118a used as the gate of the driving transistor Tdr, and can have the same or similar performance as a conventional driving transistor, which has a larger size than the driving transistor used in this disclosure.

[0143] Therefore, although the driving transistors used in this disclosure are formed with a smaller size compared to conventional driving transistors, they can have the same or similar performance as conventional driving transistors. Thus, according to this disclosure, the size of the electrodes constituting the driving transistor Tdr can be reduced, thereby increasing the aperture ratio of the light-emitting display panel.

[0144] According to the present disclosure as described above, the storage capacitor Cst includes a second (2-1) capacitor Cst2_1 and a second (2-2) capacitor Cst2_2 connected in parallel. Therefore, compared to a conventional storage capacitor formed by two electrodes facing each other, the storage capacitor Cst applied in this disclosure can be formed with a smaller size than a conventional capacitor, achieving a capacitance that is the same as or similar to that of a conventional capacitor. Therefore, the size of the opening can be increased as much as the size of the storage capacitor is reduced.

[0145] Additionally, the (2-1) capacitor Cst2_1 includes a second active capacitor electrode 115b and a second gate capacitor electrode 118c, and the (2-2) capacitor Cst2_2 includes a second active capacitor electrode 115b and a second light-shielding capacitor electrode 112c.

[0146] In this configuration, the gate electrode 118a, the second active capacitor electrode 115b, and the light-shielding electrode 112a are electrically connected to each other, and the first electrode 114a, the second gate capacitor electrode 118c, and the second light-shielding capacitor electrode 112c are electrically connected to each other.

[0147] Therefore, the first terminals of capacitor (2-1) Cst2_1 and capacitor (2-2) Cst2_2 are connected together to the first electrode 114a, and the second terminals of capacitor (2-1) Cst2_1 and capacitor (2-2) Cst2_2 are connected together to the gate electrode 118a.

[0148] In other words, the (2-1) capacitor Cst2_1 and the (2-2) capacitor Cst2_2 are connected in parallel with each other. Therefore, the capacitance of the storage capacitor Cst, which includes the (2-1) capacitor Cst2_1 and the (2-2) capacitor Cst2_2, can be greater than the capacitance of the storage capacitor which only has one of the (2-1) capacitor Cst2_1 and the (2-2) capacitor Cst2_2.

[0149] Therefore, the storage capacitor Cst used in this disclosure can be formed with a size smaller than that of a conventional capacitor, resulting in a capacitance that is the same as or similar to that of a conventional capacitor. Consequently, the size of the opening in the light-emitting display panel 100 can be increased as much as the size of the reduced storage capacitor.

[0150] Figure 11 This is another exemplary view showing four pixels of a light-emitting display panel according to an embodiment of the present disclosure. Figure 12 This illustrates an implementation method according to the present disclosure. Figure 11 An enlarged exemplary view of region Z shown. Figures 13A to 13H This illustrates the manufacturing process according to an embodiment of the present disclosure. Figure 11 An exemplary view of the pixel method shown. Figure 14A This illustrates the implementation of the present disclosure along the path of the present disclosure. Figure 11 and Figure 12 An exemplary view of the cross section taken by line C-C' shown. Figure 14B It shows Figure 14A An exemplary view of the transistors and capacitors in the cross-section shown. In the following description, descriptions with reference to [reference] will be omitted or briefly described. Figures 1 to 10B The descriptions are the same as or similar to the descriptions.

[0151] Reference Figures 11 to 14B This disclosure describes methods for manufacturing other light-emitting display panels.

[0152] First, such as Figure 13AAs shown, a light-shielding layer is provided on the upper surface of the substrate 111.

[0153] The light-shielding layer may include a light-shielding electrode 112a, a third light-shielding capacitor electrode 112d, a first voltage supply line PLA, and various other electrodes.

[0154] Next, the light-shielding layer is covered by buffer 113.

[0155] Next, as Figure 13B As shown, an active layer is provided on the upper surface of the buffer 113.

[0156] The active layer may include an active portion 114, a third active capacitor electrode 115c, a fourth active capacitor electrode 115d, and various other electrodes.

[0157] Next, as Figure 13C As shown, the active layer is covered by the gate insulating layer 117.

[0158] In this case, a fifth contact hole CH5 and various other contact holes are formed in the gate insulating layer 117.

[0159] Next, as Figure 13D As shown, a gate layer is disposed on the upper surface of the gate insulating layer 117.

[0160] The gate layer may include a gate electrode 118a, a third gate capacitor electrode 118d, and various other electrodes.

[0161] Next, the gate layer is covered by a planarization layer.

[0162] Next, as Figure 13E As shown, a color filter layer is disposed on the upper surface of the planarization layer.

[0163] For example, the color filter layer may include a red color filter 151, a blue color filter 152, a white color filter 153, and a green color filter 154.

[0164] Next, as Figure 13F As shown, the color filter layer is covered by an outer coating 160.

[0165] In this configuration, a pixel contact hole 161 for connecting the first electrode 114a of the driving transistor Tdr to the anode electrode can be formed in the outer coating 160. The pixel contact hole 161 can pass through the planarization layer and the gate insulating layer 117.

[0166] Next, as Figure 13G As shown, an anode electrode layer is disposed on the upper surface of the outer coating 160.

[0167] The anode electrode layer may include a red anode electrode 171 disposed in a red pixel, a blue anode electrode 172 disposed in a blue pixel, a white anode electrode 173 disposed in a white pixel, and a green anode electrode 174 disposed in a green pixel.

[0168] Next, as Figure 13H As shown, a dam 180 is provided on the upper surface of the anode electrode layer.

[0169] The dam 180 is formed around the outer periphery of the anode electrodes 171 to 174 that constitute the anode electrode layer. Therefore, the anode electrodes 171 to 174 are exposed through the area where the dam 180 is not provided.

[0170] Next, a light-emitting layer is formed on the upper surface of the anode electrodes 171 to 174.

[0171] Next, a cathode electrode is placed in the display area of ​​the substrate to cover the light-emitting layer.

[0172] Finally, the cathode electrode is covered by an encapsulation layer.

[0173] The features of the light-emitting display panel manufactured according to this disclosure using the above-described manufacturing process will now be described.

[0174] The light-emitting display panel 100 includes a light-emitting element ED disposed in a pixel, a driving transistor Tdr connected to the light-emitting element ED, and a storage capacitor Cst disposed between the gate of the driving transistor Tdr and a first electrode 114a. The storage capacitor Cst includes at least three electrodes disposed in its various layers that are different from each other.

[0175] The driving transistor Tdr includes: a buffer 113 disposed on a substrate 111; an active portion 114 disposed on the upper surface of the buffer 113, forming a first electrode 114a, a second electrode 114b, and a semiconductor portion 114c of the driving transistor Tdr; a gate insulating layer 117 covering the active portion 114; and a gate electrode 118a disposed on the upper surface of the gate insulating layer 117 and used as the gate of the driving transistor Tdr.

[0176] The storage capacitor Cst includes a third gate capacitor electrode 118d, a fourth active capacitor electrode 115d, and a third light-shielding capacitor electrode 112d.

[0177] The third gate capacitor electrode 118d is connected to the third active capacitor electrode 115c. The third active capacitor electrode 115c includes a first reference electrode 115c1 extending from the semiconductor portion 114c constituting the driving transistor Tdr and a second reference electrode 115c2 disposed on the upper surface of the first reference electrode 115c1. The third gate capacitor electrode 118d is disposed in the same layer as the gate electrode 118a constituting the driving transistor.

[0178] The fourth active capacitor electrode 115d is formed in the same layer as the third active capacitor electrode 115c using the same material. It is separate from the third active capacitor electrode 115c, connected to the gate electrode 118a of the driving transistor Tdr, and overlaps with the third gate capacitor electrode 118d.

[0179] The third light-shielding capacitor electrode 112d extends from the light-shielding electrode 112a disposed on the lower surface of the driving transistor Tdr and overlaps with the fourth active capacitor electrode 115d.

[0180] The first electrode 114a of the driving transistor Tdr and the third active capacitor electrode 115c are integrally formed. That is, as... Figure 14A and Figure 14B As shown, the first electrode 114a and the third active capacitor electrode 115c are formed continuously and are made of the same material.

[0181] The first electrode 114a of the driving transistor Tdr and the fourth active capacitor electrode 115d are spaced apart from each other and are formed in the same shape, such as Figure 14A and Figure 14B As shown in the image.

[0182] The gate electrode 118a that forms the gate of the driving transistor Tdr and the third gate capacitor electrode 118d that forms the storage capacitor Cst are spaced apart from each other and formed in the same layer.

[0183] The fourth active capacitor electrode 115d includes a first reference electrode 115d1 spaced apart from the semiconductor portion 114c of the active portion 114 and a second reference electrode 115d2 disposed on the upper surface of the first reference electrode 115d1. The first electrode 114a and the third active capacitor electrode 115c may be formed of a dual structure made of the same material as the first reference electrode 115d1 and the same material as the second reference electrode 115d2.

[0184] The first reference electrode 115d1 can be formed of the same material as the semiconductor portion 114c. For example, the first reference electrode 115d1 can be IGZO composed of indium, gallium, zinc and oxygen.

[0185] The second reference electrode 115d2 can be formed of a metallic material. For example, the second reference electrode 115d2 can be an alloy of molybdenum and titanium (MoTi).

[0186] The third gate capacitor electrode 118d and the third active capacitor electrode 115c are connected to each other through the fifth contact hole CH5.

[0187] The third light-shielding capacitor electrode 112d is connected to the third gate capacitor electrode 118d.

[0188] The storage capacitor Cst comprises at least three electrodes disposed in its various layers, which are different from each other.

[0189] For example, the storage capacitor Cst includes a (3-1) capacitor Cst3_1, which is composed of a fourth active capacitor electrode 115d spaced apart from the third active capacitor electrode 115c by the gate insulating layer 117 and a third gate capacitor electrode 118d on the gate insulating layer 117. The storage capacitor Cst also includes a (3-2) capacitor Cst3_2 composed of the fourth active capacitor electrode 115d and the third light-shielding capacitor electrode 112d, and may also include a (3-3) capacitor Cst3_3 composed of a gate electrode 118a serving as the gate of the driving transistor Tdr and a third active capacitor electrode 115c extending from the first electrode 114a of the driving transistor Tdr.

[0190] According to the present disclosure as described above, the storage capacitor Cst includes a (3-1) capacitor Cst3_1, a (3-2) capacitor Cst3_2, and a (3-3) capacitor Cst3_3 connected in parallel. Therefore, compared to a conventional storage capacitor formed by two electrodes facing each other, the storage capacitor Cst applied in this disclosure can be formed with a smaller size than a conventional capacitor, achieving a capacitance that is the same as or similar to that of a conventional capacitor. Consequently, the size of the opening can be increased as much as the reduced size of the storage capacitor.

[0191] Furthermore, the (3-1) capacitor Cst3_1 includes a fourth active capacitor electrode 115d and a third gate capacitor electrode 118d, the (3-2) capacitor Cst3_2 includes a fourth active capacitor electrode 115d and a third light-shielding capacitor electrode 112d, and the (3-3) capacitor Cst3_3 includes a gate electrode 118a and a third active capacitor electrode 115c.

[0192] In this configuration, the gate electrode 118a and the fourth active capacitor electrode 115d are electrically connected to each other, and the first electrode 114a, the third gate capacitor electrode 118d, and the third light-shielding capacitor electrode 112d are electrically connected to each other.

[0193] Therefore, the first terminals of capacitors (3-1) Cst3_1, (3-2) Cst3_2, and (3-3) Cst3_3 are connected together to the first electrode 114a, and the second terminals of capacitors (3-1) Cst3_1, (3-2) Cst3_2, and (3-3) Cst3_3 are connected together to the gate electrode 118a.

[0194] In other words, the (3-1) capacitor Cst3_1, the (3-2) capacitor Cst3_2, and the (3-3) capacitor Cst3_3 are connected in parallel with each other. Therefore, the capacitance of the storage capacitor Cst, which includes the (3-1) capacitor Cst3_1, the (3-2) capacitor Cst3_2, and the (3-3) capacitor Cst3_3, can be greater than the capacitance of the storage capacitor that has only one of the (3-1) capacitor Cst3_1, the (3-2) capacitor Cst3_2, and the (3-3) capacitor Cst3_3.

[0195] Therefore, the storage capacitor Cst used in this disclosure can be formed with a size smaller than that of a conventional capacitor, resulting in a capacitance that is the same or similar to that of a conventional capacitor. Thus, the size of the opening in the light-emitting display panel 100 can be increased as much as the size of the storage capacitor is reduced.

[0196] According to this disclosure, the following beneficial effects can be obtained. Since the driving transistor can be formed in the form of a dual-gate transistor, its size can be reduced. Therefore, the size of the aperture can be increased as much as the size of the driving transistor is reduced.

[0197] According to this disclosure, a storage capacitor can be formed using at least three electrodes. Therefore, compared to a conventional storage capacitor formed by two electrodes facing each other, the storage capacitor according to this disclosure can form a capacitance that is the same as or similar to that of a conventional storage capacitor. Consequently, the size of the opening can be increased as much as the size of the storage capacitor is reduced.

[0198] In other words, according to this disclosure, the size of at least one of the driving transistors or storage capacitors can be reduced, thereby increasing the size of the aperture. Therefore, the aperture ratio can be improved.

[0199] It will be apparent to those skilled in the art that the present disclosure is not limited to the described embodiments and drawings, and that various substitutions, modifications, and variations can be made to the present disclosure without departing from its spirit or scope. Therefore, the scope of the present disclosure is defined by the appended claims, and all variations or modifications arising from the meaning, scope, and equivalent concepts of the claims are intended to fall within the scope of the present disclosure.

Claims

1. A light-emitting display panel, comprising: Light-emitting elements set in pixels; A driving transistor connected to the light-emitting element; as well as A storage capacitor connected to the gate and the first electrode of the driving transistor. The driving transistor includes: A light-shielding electrode is disposed on the substrate and serves as the gate of the driving transistor; A buffer covering the light-shielding electrode; An active portion disposed on the upper surface of the buffer, the active portion including a first electrode, a second electrode, and a semiconductor portion of the driving transistor; A gate insulating layer covering at least a portion of the active portion; and A gate electrode, disposed on the upper surface of the gate insulating layer, is connected to the light-shielding electrode and serves as the gate of the driving transistor, wherein the electrode of the storage capacitor is connected to at least one of the light-shielding electrode and the gate electrode. The storage capacitor includes: A first active capacitor electrode extends from a first electrode of the active portion, wherein each of the first electrode of the active portion and the first active capacitor electrode includes: a first reference electrode extending from a semiconductor portion of the active portion, and a second reference electrode disposed on an upper surface of the first reference electrode. A first gate capacitor electrode extends from the gate electrode and overlaps with at least a portion of the first active capacitor electrode; and A first light-shielding capacitor electrode extends from the light-shielding electrode and overlaps with at least a portion of the first active capacitor electrode.

2. The light-emitting display panel according to claim 1, wherein, The storage capacitor includes at least three electrodes disposed in its respective layers, which are different from each other.

3. The light-emitting display panel according to claim 1, wherein, The first gate capacitor electrode and the first light-shielding capacitor electrode are connected to each other.

4. The light-emitting display panel according to claim 1, wherein, The storage capacitor includes: The first (1-1) capacitor is composed of the first active capacitor electrode and the first gate capacitor electrode; and The (1-2)th capacitor is composed of the first active capacitor electrode and the first light-shielding capacitor electrode.

5. A light-emitting display panel, comprising: Light-emitting elements set in pixels; A driving transistor connected to the light-emitting element; as well as A storage capacitor connected to the gate electrode and the first electrode of the driving transistor. The storage capacitor includes at least three electrodes, which are disposed in different layers thereof. The storage capacitor includes: The third active capacitor electrode includes a first reference electrode extending from the semiconductor portion constituting the driving transistor and a second reference electrode disposed on the upper surface of the first reference electrode. A third gate capacitor electrode is connected to the third active capacitor electrode, and the third gate capacitor electrode is disposed in the same layer as the gate electrode of the driving transistor; A fourth active capacitor electrode, made of the same material as the third active capacitor electrode and disposed in the same layer as the third active capacitor electrode, is separate from the third active capacitor electrode and connected to the gate electrode of the driving transistor; and A third light-shielding capacitor electrode extends from the light-shielding electrode of the driving transistor, wherein the fourth active capacitor electrode is between the third gate capacitor electrode and the third light-shielding capacitor electrode.

6. The light-emitting display panel according to claim 5, wherein, The third light-shielding capacitor electrode is connected to the third gate capacitor electrode.

7. The light-emitting display panel according to claim 5, wherein, The storage capacitor includes: The (3-1) capacitor is composed of the fourth active capacitor electrode and the third gate capacitor electrode; and The (3-2)th capacitor is composed of the fourth active capacitor electrode and the third light-shielding capacitor electrode.

8. The light-emitting display panel according to claim 7, wherein, The storage capacitor also includes a third (3-3) capacitor, which is composed of the gate electrode of the driving transistor and the third active capacitor electrode.

9. A light-emitting display panel, comprising: Light-emitting elements; A driving transistor configured to drive the light-emitting element, the driving transistor comprising: The active portion includes a first electrode, a second electrode, and a semiconductor portion. The gate insulating layer on at least a portion of the active portion, and A gate electrode disposed on at least a portion of the gate insulating layer; Light-shielding electrodes on the substrate; and A storage capacitor electrically connected to the driving transistor, the storage capacitor including at least one capacitor electrode extending from a first electrode of the active portion of the driving transistor, the gate electrode of the driving transistor, or the light-shielding electrode. Wherein, the at least one capacitor electrode of the storage capacitor includes an active capacitor electrode extending from the first electrode of the active portion, and Each of the first electrode of the active portion and the active capacitor electrode includes: a first reference electrode extending from the semiconductor portion of the active portion, and a second reference electrode disposed on the upper surface of the first reference electrode.

10. The light-emitting display panel according to claim 9, wherein, Each of the active capacitor electrode and the first electrode of the active portion includes a first reference electrode made of semiconductor material and a second reference electrode made of metallic material.

11. The light-emitting display panel according to claim 9, wherein, The at least one capacitor electrode further includes a light-shielding capacitor electrode that extends from the light-shielding electrode to overlap with the active capacitor electrode to form a first capacitor.

12. The light-emitting display panel according to claim 9, wherein, The at least one capacitor electrode further includes a gate capacitor electrode that extends from the gate electrode of the driving transistor to overlap with the active capacitor electrode to form a second capacitor.

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