Semiconductor processing methods and apparatus

Abstract

This disclosure provides a semiconductor processing method, comprising: providing a wafer having a first surface and a second surface opposite to the first surface, wherein the wafer has a plurality of semiconductor elements on the first surface; attaching an adhesive film to the wafer, wherein the adhesive film has a third surface facing the first surface; fixing a frame to a fourth surface of the adhesive film opposite to the third surface; facing the second surface to a grinding tool; and grinding the wafer from the second surface.

Description

Technical Field

[0001] This invention relates to a semiconductor device and a semiconductor processing method, and more particularly to a grinding method and apparatus thereof. Background Technology

[0002] Before wafers are diced to form chips, they must undergo a backside grinding process. As wafers become thinner, the risk of breakage during backside grinding increases. To ensure that the wafer is not damaged or broken by thermal and mechanical stress during grinding, an adhesive film is typically applied to the wafer as support and protection, reducing the risk of breakage during transport.

[0003] There is still much room for improvement in the existing wafer back-side grinding process to enhance the quality of thinned wafers.

[0004] Therefore, there is a need to improve the current wafer lamination methods and polishing equipment in order to reduce costs and increase wafer polishing efficiency.

[0005] The above description of "prior art" is merely to provide background information and does not constitute an admission that the above description of "prior art" discloses the subject matter of this disclosure. It does not constitute prior art to this disclosure, and no description of the above "prior art" should be considered part of this case. Summary of the Invention

[0006] One embodiment of this disclosure provides a semiconductor processing apparatus including a central region and a peripheral region. The central region is used to support a wafer and has a first surface. The peripheral region surrounds the central region and is used to support a frame, and the peripheral region has a second surface higher than the first surface.

[0007] In some embodiments, the central area is approximately circular when viewed from above.

[0008] In some embodiments, the central region includes a first adsorption element for adsorbing the wafer, the first adsorption element being located below the first surface.

[0009] In some embodiments, the first adsorption element has a vacuum adsorption device.

[0010] In some embodiments, the semiconductor processing apparatus further includes a trench disposed between a central region and a surrounding region, wherein the trench surrounds the central region.

[0011] One embodiment of this disclosure provides another semiconductor processing apparatus, including a central region and a surrounding region. The central region is used to support a wafer and has a first surface. The surrounding region surrounds the central region and is used to support a frame, and the surrounding region has a second surface lower than the first surface.

[0012] In some embodiments, the distance between the first surface and the second surface is equal to the height of the frame.

[0013] In some embodiments, the central region includes a first adsorption element for adsorbing the wafer, the first adsorption element being located below the first surface.

[0014] In some embodiments, the surrounding area includes a second adsorption element for adsorbing the frame, the second adsorption element being located below the second surface.

[0015] In some embodiments, the second adsorption element has a vacuum or magnetic adsorption device.

[0016] Another embodiment of this disclosure provides a method for processing a wafer, comprising: providing a wafer having a first surface and a second surface opposite to the first surface, wherein the wafer has a plurality of semiconductor elements on the first surface; attaching an adhesive film to the wafer, wherein the adhesive film has a third surface facing the first surface; fixing a frame to a fourth surface of the adhesive film opposite to the third surface; facing the second surface to a grinding tool; and grinding the wafer from the second surface.

[0017] In some embodiments, the step of applying an adhesive film to a wafer includes providing a carrier device including a first central region and a first peripheral region surrounding the first central region; placing a wafer on the first central region, wherein a second surface of the wafer faces the carrier device; and applying the adhesive film over the wafer and the first peripheral region to bond it to the wafer.

[0018] In some embodiments, the method of wafer processing further includes adsorbing the wafer using an adsorption element after the wafer is placed in the carrier device.

[0019] In some embodiments, the method of processing a wafer further includes adjusting the surface height of a first central region according to the thickness of the wafer, such that the height of the adhesive film in the first central region is equal to that in the first surrounding region.

[0020] In some embodiments, the step of fixing the frame to a fourth surface of the adhesive film relative to the third surface includes applying an adhesive to attach the frame to the adhesive film in a concentric manner with the wafer.

[0021] In some embodiments, the method of processing the wafer further includes cutting the peripheral portion of the adhesive film so that the cut edge of the adhesive film is aligned with the outer edge of the frame.

[0022] In some embodiments, the step of grinding the wafer from the second surface includes fixing the wafer to the processing fixture, wherein the frame surrounds the second central region of the processing fixture from the periphery.

[0023] In some embodiments, the processing fixing portion includes a second peripheral region surrounding a second central region, and the second peripheral region has a fifth surface that is lower than a sixth surface of the central region.

[0024] In some embodiments, the method of wafer processing further includes providing a transfer device to remove the wafer from the processing fixture after grinding.

[0025] In some embodiments, the transfer device includes a first adsorption section and a second adsorption section surrounding the first adsorption section, wherein the first adsorption section has a vacuum adsorption device for adsorbing the wafer, and the second adsorption section has a vacuum or magnetic adsorption device for adsorbing the frame.

[0026] Therefore, this disclosure proposes a novel wafer bonding method and polishing apparatus, in which the frame and wafer are bonded to the opposite side of the adhesive film for transfer and polishing. This reduces the probability of wafer breakage due to stretching of the adhesive film during polishing, while ensuring that the adhesive film has sufficient tension to transfer the thinned wafer, thereby improving the polishing quality of the wafer.

[0027] The foregoing has provided a fairly broad overview of the technical features and advantages of this disclosure, so as to facilitate a better understanding of the detailed description of this disclosure that follows. Other technical features and advantages constituting the subject matter of the claims of this disclosure will be described below. Those skilled in the art to which this disclosure pertains will understand that the concepts and specific embodiments disclosed below can be readily used to modify or design other structures or processes to achieve the same purpose as this disclosure. Those skilled in the art to which this disclosure pertains will also understand that such equivalent constructions cannot depart from the spirit and scope of this disclosure as defined in the appended claims. Attached Figure Description

[0028] When referring to the drawings in conjunction with the embodiments and the scope of the patent application, a more comprehensive understanding of the disclosure of this application can be obtained. The same element symbols in the drawings refer to the same elements.

[0029] Figure 1 This is a three-dimensional schematic diagram of a wafer frame unit drawn based on a comparative example of the prior art.

[0030] Figure 2 This is a flowchart of a wafer fabrication method based on some embodiments disclosed herein.

[0031] Figures 3 to 10 These are drawings based on some embodiments disclosed herein. Figure 2 A schematic diagram of the operation steps in the wafer fabrication method.

[0032] Figure 11 This is a three-dimensional schematic diagram of a wafer frame unit drawn based on some embodiments disclosed herein.

[0033] Figure 12 This is a side view schematic diagram of a wafer frame unit drawn according to some embodiments of the present disclosure.

[0034] Figures 13 to 18 These are drawings based on some embodiments disclosed herein. Figure 2 A schematic diagram of the operation steps in the wafer fabrication method. Detailed Implementation

[0035] The embodiments of this disclosure are discussed in detail below. However, it should be understood that the embodiments provide many applicable inventive concepts that can be implemented in various specific environments. The specific embodiments discussed are merely illustrative of specific ways of making and using the embodiments and do not limit the scope of this disclosure.

[0036] In the various views and illustrative embodiments, the same reference numerals are configured to denote the same elements. Reference will now be made in detail to the exemplary embodiments shown in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to denote the same or similar parts. In the drawings, shapes and thicknesses may be exaggerated for clarity and convenience. This description will be directed particularly toward elements forming part of or more directly cooperating with the apparatus according to this disclosure. It should be understood that elements not specifically shown or described may take various forms. References throughout this specification to “some embodiments” or “in embodiments” mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Therefore, the phrases “in some embodiments” or “in embodiments” appearing in various places throughout this specification do not necessarily refer to the same embodiment. Furthermore, particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0037] In the accompanying drawings, the same reference numerals are configured to indicate the same or similar elements in the various views, and illustrative embodiments of the invention are shown and described. The drawings are not necessarily drawn to scale, and in some cases, they have been exaggerated and / or simplified, configured only for illustrative purposes. Based on the following illustrative embodiments of the invention, those skilled in the art will understand many possible applications and variations of the invention.

[0038] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiments of this disclosure pertain. It should be understood that terms defined, for example, in common dictionaries, shall be interpreted as having the same meaning as they have in the relevant field and in the context of this disclosure, and shall not be construed as, or as having, an overly formal meaning unless expressly defined herein.

[0039] Furthermore, the following examples of several embodiments of this disclosure illustrate its core value, but are not intended to limit the scope of protection of this disclosure. For clarity and ease of understanding, identical or similar functions or elements between different embodiments of this disclosure will not be repeatedly described or indicated in the figures. Moreover, different elements or technical features in different embodiments, when combined or substituted to obtain new embodiments without conflict, still fall within the scope of protection of this disclosure.

[0040] When the wafer thickness is less than 100 micrometers, the adhesive film bonded to the wafer can no longer provide sufficient support. (Reference) Figure 1 , Figure 1 This is a perspective view of a wafer frame unit 100 according to the prior art. The wafer frame unit 100 includes a wafer 21, an adhesive film 23, and a frame 25. The wafer 21 has a first surface 21A and a second surface 21B facing each other. The first surface 21A of the wafer 21 may be the front side of the wafer, and the second surface 21B may be the back side of the wafer. A plurality of semiconductor devices 22 are formed on the first surface 21A. The adhesive film 23 is adhered to the first surface 21A. The frame 25 is adhered and fixed to the adhesive film 23 on the same side as the wafer 21.

[0041] In existing wafer bonding methods, the wafer 21 and the frame 25 are located on the same side of the adhesive film 23. Because the frame 25 has a certain thickness, when grinding the second surface 21B of the wafer 21, the height of the frame 25 must be lower than the final grinding thickness of the wafer 21, thus limiting the use of the frame 25. Furthermore, when grinding is performed with the wafer 21 and frame 25 on the same side of the adhesive film 23, the frame 25 pulls on the adhesive film 23 when pressed down, preventing the adhesive film 23 from adhering properly to the wafer 21. Instead, it creates stress on the wafer 21, negating the protective function of the frame 25 and easily causing edge cracks or breakage of the wafer 21.

[0042] Figure 2 This is a flowchart illustrating a wafer polishing method 200 based on some embodiments disclosed herein. (See also...) Figure 2 Method 200 includes steps 101, 103, 105, 107, 109 and 111. Figures 3 to 10 as well as Figures 13 to 18 These are schematic diagrams illustrating the operational steps of the wafer polishing method 200 based on some embodiments disclosed herein.

[0043] In step 101, wafer 1 is provided, such as Figure 3As shown. In some embodiments, wafer 1 includes a wafer substrate made of semiconductor materials, such as silicon, gallium arsenide, silicon carbide, gallium nitride, sapphire (alumina), etc., including but not limited to germanium, selenium, gallium phosphide, indium antimonide, indium phosphide, indium arsenide, gallium antimonide, zinc oxide, strontium titanate, magnesium oxide, lanthanum aluminate, lithium niobate, lithium tantalate, borosilicate, graphene, coated silicon wafer, quartz substrate, or indium tin oxide substrate. In some embodiments, wafer 1 may also be replaced by non-semiconductor materials, including but not limited to glass substrate, optoelectronic substrate, ceramic substrate, or metal substrate.

[0044] In some embodiments, wafer 1 has opposing first surface 1A and second surface 1B. In some embodiments, the first surface 1A of wafer 1 is the front side of the wafer and the second surface 1B is the back side of the wafer. In some embodiments, wafer 1 is circular. In other embodiments, the shape of wafer 1 is not limited to circular; other wafers with thinning or transfer requirements, such as quadrilaterals or polygons, may be included within the scope of this disclosure.

[0045] In some embodiments, a plurality of semiconductor elements 2 are formed on a first surface 1A. The semiconductor elements 2 include active elements or passive elements, which are electrically connected to each other to form different functional circuits. In some embodiments, the semiconductor elements 2 may include various transistors, such as N-type metal-oxide-semiconductor (NMOS) and / or P-type metal-oxide-semiconductor (PMOS) devices. In some embodiments, the semiconductor element 2 may include devices such as rectifiers, vacuum tubes, capacitors, resistors, diodes, or light-emitting diodes (LEDs), and may be applied in fields such as microelectromechanical systems (MEMS), complementary metal-oxide-semiconductor (CMOS), three-dimensional integrated circuits (3DIC), memory chips, logic chips, power management chips, radio frequency (RF) chips, semiconductor interposers, Schottky diodes, or insulated-gate bipolar transistors (IGBTs).

[0046] refer to Figure 2 In step 103, the adhesive film 3 is adhered to wafer 1 (see...). Figures 4-6 ). refer to Figure 4 In some embodiments, a carrier device 400 is provided as a semiconductor processing apparatus to adhere the adhesive film 3 to the wafer 1. In some embodiments, the carrier device 400 includes a central region 14 and a surrounding region 15. The central region 14 is a circular platform viewed from above and is the main area for supporting the wafer 1, while the surrounding region 15 is an annular platform surrounding the central region 14. In some embodiments, the width (or diameter) of the central region 14 is approximately equal to the diameter of the wafer 1. In some embodiments, the central region 14 and the surrounding region 15 are connected, with a trench 16 between them. In some embodiments, the trench 16 is annular and surrounds the central region 14.

[0047] Continue to refer to Figure 4 The central region 14 has a surface 14a, the surrounding region 15 has a surface 15a, and the trench 16 has a surface 16a. In some embodiments, the central region 14 includes a lifting platform 18, which can adjust the height T1 of the surface 14a to control the vertical position of the wafer 1 carried thereon. Furthermore, by adjusting the height T1, the surface 15a can be made a distance S1 higher than the surface 14a. In some embodiments, the distance S1 is adjustable to accommodate different wafer thicknesses and different process requirements. In some embodiments, the central region 14 has an adsorption member 13 located below the surface 14a and above the lifting platform 18, such as a vacuum adsorption device, which can provide an adsorption force on the wafer 1 to fix the wafer 1 to the central region 14. In some embodiments, the surrounding region 15 has a vacuum adsorption device or a magnetic adsorption device (which can be a magnet or an electromagnet), which can provide adsorption on points, lines, or surfaces of the frame 5 to fix the frame 5 to the surrounding region 15. In some embodiments, the surrounding region 15 has a base 9, an ultraviolet light source 10, and a light-transmitting material 11. An ultraviolet light source 10 is located above the base 9 to provide at least one wavelength for curing or debonding purposes. A light-transmitting material 11 is located above the ultraviolet light source 10 and below the surface 15a. In some embodiments, the light-transmitting material 11 includes, but is not limited to, glass or quartz. In some embodiments, depending on different process requirements, the ultraviolet light source 10 and the light-transmitting material 11 may also be disposed within the trench 16, wherein the light-transmitting material 11 is located above the ultraviolet light source 10 and below the surface 16a.

[0048] refer to Figure 5In some embodiments, wafer 1 is placed on the central region 14 with its first surface 1A facing upwards, while its second surface 1B faces the surface 14a of the central region 14 and is adsorbed by the adsorption member 13. In some embodiments, after placing wafer 1 on the central region 14, the surface 15a of the surrounding region 15 is made of a low-adhesion material, allowing the lifting platform 18 to adjust the height T1 so that the first surface 1A of wafer 1 and the surface 15a are approximately at the same horizontal level. In some embodiments, after placing wafer 1 on the central region 14, a release agent 12 can be applied to the surface 15a of the surrounding region 15. The release agent 12 is an adhesive whose stickiness can be reduced by, for example, light or heat. In some embodiments, after applying the release agent 12, the height T1 is adjusted by the lifting platform 18 so that the first surface 1A of wafer 1 and the release agent 12 on the surface 15a are approximately at the same horizontal level.

[0049] refer to Figure 6 A film 3 is used to adhere the wafer 1 located on the carrier device 400. In some embodiments, the film 3 is a special film suitable for milling and thinning, and is not stretchable. In other embodiments, the film 3 may also be stretchable and can be easily stretched. In some embodiments, the film 3 includes, but is not limited to, polymer materials such as polyimide (PI), polyolefin (PO), polypropylene (PP), polyethylene (PE), polyethylene terephthalate (PET), polyurethane (PU), ethylene vinyl acetate (EVA), polyvinyl chloride (PVC), polystyrene (PS), or polyether sulfone (PES). The film 3 has opposing surfaces 3A and 3B. In some embodiments, the film 3 is adhered to the wafer 1 with surface 3A facing the first surface 1A, and surface 3A of the film 3 is also adhered to the surrounding area 15 through release agent 12. In some embodiments, when the adhesive film 3 needs to be removed from the surrounding area 15, the adhesiveness of the release agent 12 can be reduced by irradiation or heating. This reduces the adhesion between surface 3A and surface 15a, allowing the adhesive film 3 to be easily removed from the surrounding area 15. In other embodiments, the adhesive film 3 can also be removed from the surrounding area 15 simply by the difference in adhesion strength between surface 3A and surface 3B.

[0050] In some embodiments, the height T1 can be adjusted via the lifting platform 18 so that the first surface 1A and surface 15a of the wafer 1 are substantially at the same horizontal level. In some embodiments, when the adhesive film 3 needs to be removed from the surrounding area 15, it can be removed by irradiation or heating at the contact point between the adhesive film 3 and the surrounding area 15. In some embodiments, the height T1 can be precisely adjusted according to the thickness of the wafer 1 to change the height of surface 14a so that the height of the adhesive film 3 in the central area 14 is substantially equal to that in the surrounding area 15, so that the adhesive film 3 is horizontal. In some embodiments, the groove 16 can provide a gap so that the adhesive film 3 is not completely adhered to the carrier device 400, thereby reducing the adhesion between the adhesive film 3 and the release agent 12, and facilitating the removal of the adhesive film 3 together with the wafer 1 from the carrier device 400.

[0051] refer to Figure 2 In step 105, the frame 5 is fixed to the adhesive film 3, such as... Figures 7-10 As shown. Reference Figure 7 In some embodiments, the adhesive 7 is applied to the bottom surface 3B of the adhesive film 3 located on the surrounding area 15. In some embodiments, the adhesive 7 may be a solvent-based, thermosetting, or UV-based solid, liquid, or film-type adhesive.

[0052] refer to Figure 8 The frame 5 is placed on the surrounding area 15 with the adhesive 7 aligned. In some embodiments, the frame 5 has a height R1 and appears annular when viewed from above. In some embodiments, the frame 5 surrounds the wafer 1 and the central area 14, and is disposed on opposite sides of the adhesive film 3, respectively, to the wafer 1. In other embodiments, the adhesive 7 may be pre-applied to the bottom surface of the frame 5, and then the frame 5 may be placed on the adhesive film 3 with the bottom surface facing the surface 3B. In some embodiments, the adhesive film 3 extends beyond the outer edge of the frame 5 in addition to being adhered to the first surface 1A of the wafer 1, so that the bottom surface of the frame 5 is completely contained within the area of ​​the adhesive film 3. In some embodiments, the frame 5 and the wafer 1 are placed concentrically on the surrounding area 15 and the central area 14 of the carrier device 400, respectively.

[0053] refer to Figure 9 The ultraviolet light source 10 is turned on to generate ultraviolet light hv1 that passes through the light-transmitting material 11. In some embodiments, the adhesive 7 undergoes a photochemical reaction and cures under the irradiation of the ultraviolet light hv1, allowing the frame and the adhesive film 3 to adhere tightly. In some embodiments, the adhesive film 3, fixed by the frame 5, obtains sufficient tension to maintain an absolutely flat base to support and protect the wafer 1.

[0054] refer to Figure 10In some embodiments, after the frame 5 is tightly fixed to the adhesive film 3, the portion of the adhesive film 3 located at the outer edge of the frame 5 is removed. In some embodiments, a cutting tool (not shown) can be used to cut the adhesive film 3 along a cutting path in a cutting direction C1. In some embodiments, this cutting path is the outermost edge of the frame 5. Cutting the adhesive film 3 along the outermost edge of the frame 5 with the cutting tool can make the cut edge of the adhesive film 3 flush with the outermost edge of the frame 5, thereby removing excess adhesive film 3, and the remaining adhesive film 3 is adhered and fixed to the frame 3. In some embodiments, the cut edge of the adhesive film 3 can be flush with the outermost edge of the frame 5 or recessed within the frame 5.

[0055] Figure 11 This is a perspective view of a wafer frame unit 150 drawn according to some embodiments disclosed herein. After step 105 is completed, the wafer 1, the adhesive film 3, and the frame 5 form the wafer frame unit 150. In some embodiments, the wafer frame unit 150 can be flipped by a robotic arm or manually. Figure 11 The wafer frame unit 150 shown is positioned with its first surface 1A facing upwards. In some embodiments, the wafer frame unit 150 may be transported, transferred, polished, or subjected to other processes.

[0056] Figure 12 This is a side view schematic diagram of a wafer frame unit 150 drawn according to some embodiments of the present disclosure. Figure 12 The wafer frame unit 150 shown is positioned with its second surface 1B facing upwards. The bonding technique used in this disclosure involves the frame 5 and wafer 1 being respectively disposed on opposite sides of the adhesive film 3. In this configuration, the relative thickness of the frame 5 and wafer 1 does not need to be considered, allowing wafer 1 to protrude for subsequent steps, such as polishing. Figure 1 Compared with existing technologies, this method can effectively perform wafer backside thinning without squeezing the frame 5 to expose the second surface 1B of the wafer 1, thus eliminating other complicated or expensive processes and achieving the advantages of low cost and reliability.

[0057] refer to Figure 2 In step 107, wafer 1 is ground, as follows: Figures 13-14 As shown. Reference Figure 13In some embodiments, a polishing apparatus 500 is provided as a semiconductor processing apparatus, wherein the polishing apparatus 500 includes a processing fixing portion 32 and a polishing portion 34, which are separate from each other. In some embodiments, the processing fixing portion 32 includes a central region 31 and a surrounding region 33, the surrounding region 33 surrounding the central region 31, and the two have different planes. Specifically, the central region 31 has a top surface 31A, and the surrounding region 33 has a top surface 33A that is lower than the top surface 31A, with a distance D1 between the top surface 31A and the top surface 33A to accommodate the frame 5. In some embodiments, the distance D1 can be controlled by adjusting the relative plane heights of the central region 31 and the surrounding region 33 to correspond to different heights R1 of the frame 5 in different applications. In some embodiments, the distance D1 between the top surface 31A and the top surface 33A is substantially equal to the height R1 of the frame 5. In some embodiments, the polishing portion 34 has a polishing shaft 35 and a polishing tool 36 connected to the polishing shaft 35. The polishing tool 36 has a platform with a substantially flat surface. The abrasive tool 36 may be composed of any suitable material, such as, but not limited to, diamond grinding wheels, polyurethane blocks, polyurethane chips, polyurethane-impregnated polyester felt, etc.

[0058] Continue to refer to Figure 13 In some embodiments, the central region 31 has an adsorption member 41 located below the top surface 31A, such as a vacuum adsorption device, which can provide an adsorption force on the wafer 1 to fix the wafer 1 on the central region 31. In some embodiments, the surrounding region 33 has an adsorption member 43 located below the top surface 33A, such as a magnetic device (which may be a magnet or electromagnet) or a vacuum adsorption device, which can provide an adsorption force on the points, lines, or surfaces of the frame 5 to fix the frame 5 on the surrounding region 33. Through the adsorption members 41 in the central region 31 and the adsorption members 43 in the surrounding region 33, the wafer frame unit 150 can be fixed to the processing fixing part 32 by means of reverse support. In some embodiments, in the polishing apparatus 500, the second surface 1B of the wafer 1 faces the polishing tool 36 of the polishing part 34. In some embodiments, the polishing part 34 can be moved according to the process requirements to adjust the distance between it and the processing fixing part 32.

[0059] refer to Figure 14In some embodiments, after the wafer frame unit 150 is fixed to the processing fixture 32, the frame 5 surrounds the central region 31 of the processing fixture 32, and the second surface 1B of the wafer 1 faces the grinding tool 36. At this time, the center of the wafer 1 is only a predetermined distance away from the rotation center of the grinding tool 36. Then, the grinding unit 34 approaches the wafer 1 at an adjustable feed speed until the grinding tool 36 abuts against the second surface 1B of the wafer 1, thereby starting the grinding process. As the grinding axis 35 rotates, the grinding tool 36 also rotates about the Z-axis. In some embodiments, the grinding tool 36 applies a stress to the second surface 1B of the wafer 1. As the grinding tool 36 rotates rapidly, precision grinding occurs at the contact point between the grinding tool 36 and the second surface 1B, producing residual material after grinding the second surface 1B. The wafer 1 gradually thins during the grinding process, and the wafer thickness W1 also gradually decreases. In some embodiments, the grinding shaft 35 can drive the grinding wheel 36 to rotate at an adjustable speed, which can be adjusted according to the predetermined thickness to be ground off the second surface 1B. In other embodiments, the wafer 1 also rotates during the rotation of the grinding wheel 36, thereby enabling more precise grinding.

[0060] In some embodiments, after the wafer 1 is polished by the polishing apparatus 500, the thinned wafer 1 remains fixed on the wafer frame unit 150. During the polishing process of the polishing unit 34 on the wafer 1, the frame 5 can fix the adhesive film 3 and maintain the flatness of the adhesive film 3, providing sufficient tension to prevent damage to the shape of the adhesive film 3. In addition, the wafer 1, through the application of the adhesive film 3 and the support of the frame 5, can be protected and supported during polishing. On the other hand, the wafer frame unit 150 is arranged on the polishing apparatus 500 with the frame 5 and the wafer 1 respectively disposed on opposite sides of the adhesive film 3. This reduces the probability of wafer breakage due to stretching during the polishing process when the polishing unit 34 polishes the second surface 1B of the wafer 1, thus achieving better thinning quality of the wafer 1.

[0061] refer to Figure 2 In step 109, the wafer is transferred, as follows: Figures 15-17 As shown. Reference Figure 15 In some embodiments, a transfer device 600 is provided, which includes a first adsorption portion 61, a second adsorption portion 62, and a connecting portion 65, wherein the first adsorption portion 61 and the second adsorption portion 62 are connected through the connecting portion 65. In some embodiments, the first adsorption portion 61 is used to adsorb the wafer 1, and therefore the width or diameter of the first adsorption portion 61 is approximately equal to the diameter of the wafer 1. In some embodiments, the second adsorption portion 62 surrounds the first adsorption portion 61 and has a ring-shaped structure.

[0062] In some embodiments, the first adsorption portion 61 and the second adsorption portion 62 have different planar heights. Specifically, the first adsorption portion 61 has a top surface 61A, the second adsorption portion 62 has a top surface 62A, and there is a height difference H1 between the top surfaces 61A and 62A. In some embodiments, the height difference H1 of the first adsorption portion 61 can be adjusted by means of a connecting portion 65. In some embodiments, the height difference H1 is substantially equal to the thickness W1.

[0063] refer to Figure 16 In some embodiments, the first adsorption part 61 has an adsorption element, such as a vacuum adsorption device, which can provide an adsorption force on the wafer 1 to fix the wafer 1 on the first adsorption part 61. In some embodiments, the second adsorption part 62 has a vacuum adsorption device or a magnetic adsorption device (which may be a magnet or an electromagnet), which can provide adsorption on points, lines, or surfaces of the frame 5 to fix the frame 5 on the second adsorption part 62. Through the adsorption devices of the first adsorption part 61 and the second adsorption part 62, the wafer frame unit 150 can be fixed on the transfer device 600 with the second surface 1B facing upward. In some embodiments, the wafer frame unit 150 can be transferred through the transfer device 600, for example, the transfer device 600 can transport the wafer frame unit 150 and transfer the wafer frame unit 150 into or out of the polishing device 500, but is not limited thereto. In other embodiments, the wafer frame unit 150 can be placed on the polishing apparatus 500 by other means, such as by human labor or a robotic arm. After the wafer is thinned, the wafer frame unit 150 is then transferred out of the polishing apparatus 500 by the transfer device 600. In some embodiments, when the transfer device 600 transfers the wafer frame unit 150, the connecting part 65 will raise and lower the first adsorption part 61 to adjust the height difference H1 at any time to correspond to the different wafer thicknesses W1 before and after polishing.

[0064] refer to Figure 17 , Figure 17 The diagram shows the wafer frame unit 150 being transferred out of the processing fixture 32 by the transfer device 600 after wafer 1 has been thinned and polished. At this time, the distance D1 between the central region 31 and the surrounding region 33 is approximately equal to the height R1 of the frame 5. Simultaneously, the height difference H1 between the first adsorption part 61 and the second adsorption part 62 is also approximately equal to the thickness W1 of the thinned wafer. The transfer device 600 transfers wafer 1 out of the processing fixture 32 with the second surface 1B of wafer 1 facing upwards, and then transports wafer 1 to subsequent processes.

[0065] In some embodiments, after wafer 1 has been thinned by grinding, backside wet etching is performed on wafer 1 to remove the wafer damage layer caused by grinding and to release grinding stress.

[0066] refer to Figure 2 In step 111, the adhesive film 3 is debonded, such as... Figure 18 As shown. In some embodiments, after wafer 1 has been ground and thinned, a descaling process can be performed on wafer frame unit 150. Figure 18 The wafer frame unit 150 is shown with its second surface 1B facing upwards. By irradiating the wafer frame unit 150 with, for example, ultraviolet light hv2, the adhesive 7 between the adhesive film 3 and the frame 5 undergoes a photochemical reaction with the ultraviolet light hv2, thereby removing the adhesive 7's stickiness. This allows the frame 5 to be separated from the polished wafer 1, completing the wafer backside polishing process.

[0067] In some embodiments, the carrier device 400, the polishing device 500, and the transfer device 600 may be used in conjunction with the wafer frame unit 150 to provide the purposes of carrying, polishing, and transferring the wafer 1. These three purposes can be closely integrated, for example, to complete the thinning process of the wafer 1 according to the complete flow of steps S101 to S111. In other embodiments, the carrier device 400, the polishing device 500, or the transfer device 600 may also operate independently, with only one or both of them used depending on actual needs. In some embodiments, the carrier device 400 may be used only according to steps S101 to S105 to carry the wafer 1 to form the wafer frame unit 150, wherein the wafer frame unit 150 can be used for other processes. In some embodiments, the polishing device 500 may be used only according to step S107 to provide the purpose of polishing the wafer 1, wherein the wafer frame unit 150 may be provided by steps S101 to S105 or by other steps. In some embodiments, the transfer device 600 may be used only in step S109 to provide transfer of the wafer 1 before or after thinning.

[0068] While this disclosure and its advantages have been detailed, it should be understood that various changes, substitutions, and alternatives can be made without departing from the spirit and scope of this disclosure as defined in the claims. Furthermore, the scope of this application is not limited to the specific embodiments of the processes, machinery, manufacturing, material compositions, means, methods, and steps described in the specification. Those skilled in the art will understand from the disclosure that existing or future processes, machinery, manufacturing, material compositions, means, methods, or steps that have the same function or achieve substantially the same results as the corresponding embodiments described herein can be used based on this disclosure. Accordingly, such processes, machinery, manufacturing, material compositions, means, methods, or steps are included within the scope of this application.

[0069] Symbol Explanation

[0070] 1,21: Wafer

[0071] 1A, 21A: First surface

[0072] 1B, 21B: Second surface

[0073] 2,22: Semiconductor components

[0074] 3,23: Adhesive film

[0075] 3A: Front side of the adhesive film

[0076] 3B: Back side of the film

[0077] 5,25: Circular framework

[0078] 7.27: Adhesive

[0079] 9: Base

[0080] 10: Ultraviolet light source

[0081] 11: Translucent materials

[0082] 12: Release substances

[0083] 400: Load-bearing device

[0084] 13: Adsorption component

[0085] 14,31: Central Area

[0086] 15,33: Surrounding Area

[0087] 16: Trench

[0088] 18: Lifting Platform

[0089] 14a, 15a, 16a: Surface

[0090] C1: Cutting direction

[0091] 100, 150: Wafer frame unit

[0092] 500: Grinding device

[0093] 32: Machining the fixing part

[0094] 34: Grinding section

[0095] 35: Grinding shaft

[0096] 36: Grinding tools

[0097] 31A, 33A, 61A, 62A: Top surface

[0098] hv1, hv2: Ultraviolet light

[0099] S1,D1: Distance

[0100] T1,R1: Height

[0101] H1: Height difference

[0102] W1: Thickness

[0103] 600: Transfer device

[0104] 61: First Adsorption Section

[0105] 62: Second Adsorption Section

[0106] 65: Connecting part

[0107] 101, 103, 105, 107, 109, 111: Steps

[0108] 200: Method

Claims

1. A support device, comprising: A central region for holding a wafer, the central region having a first surface, the central region including a lifting platform; as well as A surrounding area that surrounds the central area and serves to support a frame, the surrounding area having a second surface that is higher than the first surface; The distance between the first surface and the second surface is adapted to the thickness of the wafer. The wafer in the central region and the surrounding region are used to bond the adhesive film. The adhesive film in the surrounding region is used to fix the frame. The frame and the wafer are respectively disposed on opposite sides of the adhesive film. The surrounding area has an ultraviolet light source and a light-transmitting material, the light-transmitting material being located above the ultraviolet light source and below the second surface; During operation, the support device places the wafer face up on the central area, applies a release agent to the second surface of the surrounding area, adjusts the height of the first surface using the lifting platform so that the front of the wafer and the release agent on the second surface are at the same level, adheres the first side of the adhesive film to the wafer and the release agent, applies an adhesive to the second side of the adhesive film in the surrounding area, and places the frame on the second side of the adhesive film with the frame aligned with the adhesive, and generates ultraviolet light through the ultraviolet light source to irradiate the adhesive, causing the frame and the second side of the adhesive film to adhere tightly. The adhesive film extends beyond the outermost edge of the frame. After the frame and the adhesive film are firmly fixed, the edge of the adhesive film is cut with a cutting tool to be flush with the outermost edge of the frame or recessed into the frame.

2. The support device as claimed in claim 1, wherein the central region is generally circular when viewed from above.

3. The carrier device as claimed in claim 1, wherein the central region includes a first adsorption element for adsorbing the wafer, the first adsorption element being located below the first surface.

4. The support device as claimed in claim 3, wherein the first adsorption element has a vacuum adsorption device.

5. The bearing device as claimed in claim 1, further comprising a groove disposed between the central region and the surrounding region, wherein the groove surrounds the central region.

6. A method for processing a wafer, comprising: A wafer is provided having a first surface and a second surface opposite the first surface, wherein the wafer has a plurality of semiconductor elements on the first surface; An adhesive film is adhered to the wafer, wherein the adhesive film has a third surface facing the first surface; A frame is fixed to a fourth surface of the adhesive film relative to the third surface; The second surface is placed onto a grinding wheel; as well as The wafer is ground from the second surface; The step of attaching the adhesive film to the wafer includes: A support device is provided, the support device including a first central region and a first surrounding region surrounding the first central region, the first central region having a first surface, the first surrounding region having a second surface higher than the first surface of the first central region, a distance between the first surface of the first central region and the second surface of the first surrounding region being adapted to a thickness of the wafer; the first central region including a lifting platform; the surrounding region having an ultraviolet light source and a light-transmitting material, the light-transmitting material being located above the ultraviolet light source and below the second surface; The wafer is placed on the first central region with its first surface facing upwards, wherein the second surface of the wafer faces the first surface of the first central region; a release agent is applied to the second surface of the first surrounding region, and the height of the first surface of the first central region is adjusted by the lifting platform so that the first surface of the wafer and the release agent on the second surface of the first surrounding region are at the same level. The release agent is attached to the third surface of the adhesive film over the first surface and the first surrounding area of ​​the wafer; The step of fixing the frame to the fourth surface of the adhesive film relative to the third surface includes: An adhesive is applied to the fourth surface of the adhesive film located in the surrounding area, and the frame is placed on the fourth surface of the adhesive film in such a way that the frame is aligned with the adhesive. Turn on the ultraviolet light source to generate ultraviolet light that passes through the light-transmitting material and irradiates the adhesive, so that the frame and the fourth surface of the adhesive film are tightly bonded, and the adhesive film extends beyond the outermost edge of the frame; After the frame is firmly fixed to the adhesive film, the edge of the adhesive film is cut with a cutting tool to be flush with the outermost edge of the frame or recessed into the frame.

7. The method of claim 6, further comprising, after the wafer is placed in the carrier device, using an adsorption member to adsorb the wafer.

8. The method of claim 6, wherein the step of grinding the wafer from the second surface comprises: The wafer is fixed to a processing fixture, wherein the frame surrounds a second central region of the processing fixture.

9. The method of claim 8, wherein the processing fixing portion includes a second peripheral region surrounding the second central region, and the second peripheral region has a fifth surface lower than a sixth surface of the central region.

10. The method of claim 8, further comprising: A transfer device is provided to remove the wafer from the processing fixture after grinding.

11. The method of claim 10, wherein the transfer device includes a first adsorption portion and a second adsorption portion surrounding the first adsorption portion, wherein the first adsorption portion has a vacuum adsorption device for adsorbing the wafer, and the second adsorption portion has a vacuum or magnetic adsorption device for adsorbing the frame.

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