Non-impact die bonding method with corner or side edge contact
By bonding the die and substrate with tin-free balls and copper pillars, and by using positive and negative pressure to control the corner or side contact of the die, the problems of incomplete bonding and damage between the die and the substrate are solved, achieving low-cost and high-efficiency die fixing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SAULTECH TECH CO LTD
- Filing Date
- 2021-08-17
- Publication Date
- 2026-08-04
AI Technical Summary
Existing die-to-wafer bonding technologies suffer from problems such as incomplete and tight bonding between the die and the substrate, die damage, and high manufacturing costs. In particular, the bonding wave control of small-sized dies is difficult, resulting in low processing yield.
Using tin-free spheres and copper-pillar-free chips and substrates, the positive and negative pressure of the die bonding device is controlled to utilize the corner or side flexural deformation of the chips to contact the chip placement area without impact, forming a bonding wave and gradually fixing them, avoiding the installation of elastic components and reducing manufacturing costs.
This achieves impact-free contact between the die and the substrate, avoids die damage, improves processing yield, reduces manufacturing costs, and ensures precise die placement.
Smart Images
Figure CN114695151B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a die bonding method, and more particularly to a non-impact die bonding method for fixing grains to the corners or sides of a substrate. Background Technology
[0002] Integrated circuits are fabricated on semiconductor wafers in large batches through multiple processes. The wafers are then further divided into multiple dies. In other words, a die is a small, unpackaged piece of integrated circuit material made from semiconductor material. The divided dies are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device. The dies are then sequentially transferred to multiple die placement areas on a substrate to facilitate subsequent processing.
[0003] Wafer-to-wafer direct bonding technology has been around for years and is a front-end process that allows for easy control of cleanliness and crystallinity. Furthermore, wafers are typically 6-12 inches in size, which is relatively large and makes it easier to control the generation of bonding waves. The problem with wafer-to-wafer direct bonding is that it is more difficult to apply to system-on-a-chip (SoC) applications. This is because SoCs are usually composed of chips from different manufacturers, and fabricating different logic circuits from the beginning using the same photomask would be extremely costly.
[0004] Die-to-wafer bonding technology was developed to integrate chiplets from different manufacturers. It significantly reduces development costs and allows for the direct application of existing chiplet solutions from other manufacturers in a single-chip system-on-a-chip (SoC) process, eliminating the need for additional dedicated logic circuitry. Therefore, die-to-wafer bonding is the current development trend.
[0005] Because traditional solder bonding technology has reached its limits, copper direct bonding technology (i.e., hybrid bonding technology) has become the preferred solution for die-to-wafer bonding technology in order to reduce die size and contact size.
[0006] However, compared to wafer-to-wafer direct bonding technology, the smaller die size makes controlling the bonding wave quite difficult. Therefore, a suitable hybrid bonding technology for die-to-wafer bonding has not yet been successfully developed. The following will introduce three commonly used die-to-wafer bonding technologies.
[0007] The first die-to-wafer bonding technology involves the die bonding device first picking up the die from the carrier, then moving the die onto the substrate so that the die directly contacts the substrate. Finally, the die bonding device detaches from the die, thus fixing the die onto the substrate. The problem with this technology is that it is prone to creating voids, where air bubbles are trapped between the die and the substrate. This results in incomplete and loose bonding between the die and the substrate, making subsequent processing steps susceptible to the effects of these air bubbles and reducing the yield of the finished product.
[0008] The second type of die-to-wafer bonding technology involves a die bonding device transferring the die to the substrate via air jetting. The problems with this technology are twofold: first, the die has a certain mass, and under the influence of gravity, the die falls with acceleration to the die placement area, generating a significant impact force that causes the die to contact the substrate with considerable force and potentially damage it; second, it is difficult to accurately place the die on the die placement area.
[0009] The third die-to-wafer bonding technology involves a die-bonding device with three elastic elements located on opposite sides of the fixed surface. The K-value of the two peripheral elastic elements is smaller than that of the central positioning elastic element; the K-value is the spring constant. When the die-bonding device moves towards the substrate, inertia causes deformation of the elastic elements with different K-values, causing the center of the die to contact the substrate first, generating a bonding wave that precisely transfers the die to the die placement area. The problems with this technology are: firstly, when the die-bonding device moves towards the substrate, the elastic elements provide a large mass inertia to the die, resulting in a large impact force when the die contacts the substrate, potentially causing damage; secondly, because the die-bonding device itself is small, the elastic elements are very small, making assembly difficult and increasing manufacturing costs.
[0010] In addition, the above three die bonding methods result in excessively fast die bonding speed when the die is bonded to the substrate, which can easily cause the die to be damaged, skewed, or bent. Summary of the Invention
[0011] The main objective of this invention is to provide a non-impact die bonding method for corner or side contact, which can control the contact between the corner or side of the die and the die placement area through non-impact positive pressure. The force is extremely small and will not damage the die. Furthermore, there is no need to install elastic components, resulting in lower manufacturing costs.
[0012] To achieve the aforementioned objective, the present invention provides a non-impact die bonding method for corner or side contact, comprising the following steps: (a) a die bonding device picks up a die, the surface of which is free of solder balls and copper pillars; (b) the die bonding device moves the die to one side of a die placement area on a substrate, the surface of which is free of solder balls and copper pillars; (c) the die bonding device blows a corner or side of the die with a positive pressure, causing the corner or side of the die to flex and deform to contact the die placement area; (d) after contacting the die placement area, the corner or side of the die forms an adhesion wave, the adhesion wave extending from the corner of the die to its opposite diagonal or from the side of the die to its opposite side, causing the die to gradually detach from the die bonding device and be fixed on the die placement area; and (e) the die is completely fixed on the die placement area.
[0013] To achieve the aforementioned objective, the present invention provides a non-impact die bonding method for corner or side contact, comprising the following steps: (a) a die bonding device picks up a die, the surface of which is free of solder balls and copper pillars; (b) the die bonding device moves the die to one side of a die placement area on a substrate, the surface of which is free of solder balls and copper pillars; (c) the die bonding device blows a corner or side of the die with a positive pressure, causing the corner or side of the die to flex and deform to contact the die placement area; (d) after contacting the die placement area, the corner or side of the die forms an adhesion wave, the adhesion wave extending from the corner of the die to its opposite diagonal or from the side of the die to its opposite side, and then the positive pressure gradually weakens and further switches to a negative pressure, causing the die to gradually detach from the die bonding device and be fixed on the die placement area; and (e) the die is completely fixed on the die placement area.
[0014] The beneficial effects of this invention are:
[0015] This invention can control the corners or sides of the die to contact the die placement area with the die by positive pressure without impact. The force of the die contacting the substrate is limited to the mass of the die, and the force is very small, so it will not damage the die. Moreover, there is no need to install elastic elements, and the manufacturing cost is low. Attached Figure Description
[0016] Figure 1 This is a flowchart of the impact-free die bonding method for corner or side contact according to the present invention.
[0017] Figure 2 This is a schematic diagram of the crystal bonding device, vacuum device, and gas supply device of the present invention.
[0018] Figure 3 This is a perspective view of the first embodiment of the die bonding apparatus of the present invention.
[0019] Figure 4 This is a schematic diagram of the first embodiment of step S1 of the present invention.
[0020] Figure 5 and Figure 6 This is a schematic diagram of the first embodiment of step S2 of the present invention.
[0021] Figure 7 This is a schematic diagram of the first embodiment of the first embodiment of step S3 of the present invention.
[0022] Figure 8 This is a schematic diagram of a second embodiment of the first embodiment of step S3 of the present invention.
[0023] Figure 9 This is a schematic diagram of the first embodiment of step S4 of the present invention.
[0024] Figure 10 This is a schematic diagram of the first embodiment of step S5 of the present invention.
[0025] Figure 11 This is a top view of a second embodiment of the die bonding apparatus of the present invention.
[0026] Figure 12 This is a side view of a second embodiment of the die bonding apparatus of the present invention.
[0027] Figure 13 This is a schematic diagram of the first embodiment of the second embodiment of step S3 of the present invention.
[0028] Figure 14 This is a schematic diagram of a second embodiment of the second embodiment of step S3 of the present invention.
[0029] Figure 15 This is a top view of a third embodiment of the die bonding apparatus of the present invention.
[0030] Figure 16 This is a side view of a third embodiment of the die bonding apparatus of the present invention.
[0031] Figure 17 This is a schematic diagram of the first embodiment of the third embodiment of step S3 of the present invention.
[0032] Figure 18 This is a schematic diagram of the second embodiment of the third embodiment of step S3 of the present invention.
[0033] Figure 19 This is a top view of the fourth embodiment of the die bonding device of the present invention.
[0034] Figure 20 This is a side view of the fourth embodiment of the die bonding device of the present invention.
[0035] Figure 21 This is a schematic diagram of the fourth embodiment of step S3 of the present invention.
[0036] Figure 22 This is a schematic diagram of the fifth embodiment of step S4 of the present invention.
[0037] Figure 23 This is a schematic diagram of the fifth embodiment of step S5 of the present invention.
[0038] Explanation of possession markings:
[0039] 10, 10A, 10B, 10C: Die bonding device; 111-119: Pores; 12: Groove; 13: Bump; 141-144: Corner; 151-154: Side; 20: Grain; 211-214: Corner; 221-224: Side; 30: Support device; 31: First surface; 40: Vacuum device; 41: Negative pressure; 50: Gas supply device; 51: Positive pressure; 60: Substrate; 61: Grain placement area; 71: Bonding wave; 72: Pressure difference fluctuation; S1-S5: Steps. Detailed Implementation
[0040] The following description, in conjunction with the accompanying drawings and component symbols, provides a more detailed account of the embodiments of the present invention, so that those skilled in the art can implement them after studying this specification.
[0041] Please see Figures 1 to 10 This invention provides a non-impact die bonding method for corner or side contact, comprising the following steps:
[0042] Step S1, as follows Figures 1 to 4 As shown, a die bonding device 10 picks up a die 20, the surface of which is free of solder balls and copper bumps. More specifically, a first surface 31 of a carrier device 30 has multiple dies 20, and the four corners 141-144 or the four sides 151-154 of the die bonding device 10 are attracted by a negative pressure 41 to the four corners 211-214 or the four sides 221-224 of the dies 20 to fix the dies 20, and the dies 20 are picked up from the carrier device 30. The carrier device 30 can be a carrier film, a carrier tray, or a vacuum tray.
[0043] like Figure 2 and Figure 3 As shown, in the first embodiment, the die bonding device 10 has four vents 111-114, which penetrate the four corners 141-144 of the bottom surface of the die bonding device 10 and are connected to a vacuum device 40 and a gas supply device 50. A groove 12 is formed on the bottom surface of the die bonding device 10, and multiple protrusions 13 are provided. The area of the groove 12 is smaller than the area of the grain 20. The protrusions 13 are located in the groove 12 and are on the same plane as the bottom surface of the die bonding device 10. The vents 111-114 communicate with the groove 12.
[0044] like Figure 4 As shown, in the first embodiment, the vacuum device 40 evacuates air from the vents 111-114 and further evacuates air from the groove 12 through the vents 111-114 to generate a vacuum and provide a negative pressure 41. The negative pressure 41 adsorbs the four corners 211-214 of the grain 20 through the vents 111-114 and the groove 12, so that the periphery of the grain 20 is tightly attached to the periphery of the bottom surface of the die bonding device 10, and the inner side of the grain 20 is tightly attached to the bottom surface of the protrusions 13. Because the periphery of the grain 20 can be tightly attached to the periphery of the bottom surface of the die bonding device 10, there is no gap between the periphery of the grain 20 and the periphery of the bottom surface of the die bonding device 10, preventing external air from entering and affecting the effect of the negative pressure 41 in adsorbing the grain 20. The protrusions 13 can keep the grain 20 flat and prevent the grain 20 from being recessed into the groove 12 due to the influence of the negative pressure 41.
[0045] Step S2, as follows Figure 1 , Figure 5 and Figure 6 As shown, the die bonding device 10 moves the die 20 to one side of a die placement area 61 of a substrate 60. The surface of the substrate 60 is free of solder balls and copper bumps. More specifically, the four corners 141-144 or the four sides 151-154 of the die bonding device 10 are continuously subjected to negative pressure 41 to attract the four corners 211-214 or the four sides 221-224 of the die 20 to fix the die 20 and prevent the die 20 from detaching from the die bonding device 10.
[0046] Better, such as Figure 5 and Figure 6 As shown, in the first embodiment, the die bonding device 10 moves from one side of the support device 30 to one side of the substrate 60 and is located in a first position. The die bonding device 10 then moves from the first position toward the substrate 60 and stops at a second position. When the die bonding device 10 is in the second position, the spacing between the die 20 and the substrate 60 provides a bond wave (see [reference needed]) generated by the die 20 after contacting the substrate 60. Figure 9 ).
[0047] Step S3, as follows Figure 1 , Figure 7 and Figure 8As shown, the die bonding device 10 blows a positive pressure 51 onto the corner 211 or side 221 of the die 20, causing the corner 211 or side 221 of the die 20 to flex and deform to contact the die placement area 61. More specifically, the corner 141 or side 151 of the die bonding device 10 switches from being attracted by a negative pressure 41 to being attracted by a positive pressure 51 onto the corner 211 or side 221 of the die 20, while the remaining corners 142-144 or the remaining sides 222-224 of the die bonding device 10 still maintain being attracted by a negative pressure 41 onto the remaining corners 212-214 or the remaining sides 222-224 of the die bonding device 10. Therefore, the die 20 can not only be kept fixed in the die bonding device 10, but also ensure that only its corner 211 or side 221 of the entire die 20 is flexed and deformed and most prominent, so that the corner 211 of the die 20 can contact the die placement area 61 in a point contact manner or the side 221 of the die 20 can contact the die placement area 61 in a line contact manner.
[0048] like Figure 2 and Figure 7 As shown, in the first embodiment of the first example, the vacuum device 40 stops evacuating air from the vents 111 of the corner 141 of the die bonding device 10, the negative pressure 41 stops adsorbing the corner 211 of the grain 20 through the vents 111 of the corner 141 of the die bonding device 10, and the gas supply device 50 starts blowing air into the vents 111 of the corner 141 of the die bonding device 10 to generate an airflow and provides a positive pressure 51. The positive pressure 51 starts blowing air through the vents 111 of the corner 141 of the die bonding device 10 onto the corner 211 of the grain 20. Therefore, the corner 141 of the die bonding device 10 switches from adsorbing the corner 211 of the grain 20 through the negative pressure 41 to blowing the corner 211 of the grain 20 through the positive pressure 51, causing the corner 211 of the grain 20 to flex and deform to contact the grain placement area 61. The vacuum device 40 continuously evacuates the remaining pores 112-114 of the die bonding device 10, so that the remaining pores 112-114 of the remaining corners 142-144 of the die bonding device 10 still maintain the adsorption of the remaining corners 212-214 of the crystal grains 20 by the negative pressure 41.
[0049] like Figure 2 and Figure 8As shown, in the second embodiment of the first embodiment, the vacuum device 40 stops evacuating air from the two vents 111 and 112 on the side 151 of the die bonding device 10, and the negative pressure 41 stops adsorbing the side 221 of the grain 20 through the two vents 111 and 112 on the side 151 of the die bonding device 10. The gas supply device 50 starts blowing air into the two vents 111 and 112 on the side 151 of the die bonding device 10 to generate an airflow and provides a positive pressure 51. The positive pressure 51 starts blowing the side 221 of the grain 20 through the two vents 111 and 112 on the side 151 of the die bonding device 10. Therefore, the side 151 of the die bonding device 10 switches from adsorbing the side 221 of the grain 20 through the negative pressure 41 to blowing the side 221 of the grain 20 through the positive pressure 51. The side 221 of the grain 20 flexes and deforms to contact the grain placement area 61. The vacuum device 40 continuously evacuates the remaining pores 113 and 114 on the remaining sides 152 to 154 of the die bonding device 10, so that the remaining pores 113 and 114 on the remaining sides 152 to 154 of the die bonding device 10 still maintain the adsorption of the remaining sides 222 to 224 of the crystal grains 20 by the negative pressure 41.
[0050] Step S4, as follows Figure 1 and Figure 9 As shown, after the corner 211 or side 221 of the die 20 contacts the die placement area 61, a bonding wave 71 is formed. The bonding wave 71 extends from the corner 211 of the die 20 to its opposite diagonal or from the side 221 of the die 20 to its opposite side, causing the die 20 to gradually detach from the die bonding device 10 and be fixed on the die placement area 61. More specifically, because the corner 211 of the die 20 contacts the die placement area 61 in a point contact manner or the side 221 of the die 20 contacts the die placement area 61 in a line contact manner, a bonding force is generated at the corner 211 or side 221 of the die 20 and its vicinity. This bonding force further forms the bonding wave 71, which gradually extends to the opposite diagonal of the corner 211 of the die 20 or to the opposite side of the side 221 of the die 20.
[0051] Preferably, the corner 141 of the die bonding device 10 adsorbs the corner 211 of the die 20 to its opposite corner through negative pressure 41, and then sequentially switches to blowing the corner 211 of the die 20 to its opposite corner through positive pressure 51; or the side 151 of the die bonding device 10 adsorbs the side 221 of the die 20 to its opposite side through negative pressure 41, and then sequentially switches to blowing the side 221 of the die 20 to its opposite side through positive pressure 51, so that the corner 211 of the die 20 to its opposite corner or the side 221 of the die 20 to its opposite side is sequentially blown by positive pressure 51 to generate a pressure difference fluctuation 72. The pressure difference fluctuation 72 can further enable the corner 211 or side 221 of the grain 20 to form a bonding wave 71 after contacting the grain placement area 61, and guide the bonding wave 71 to extend from the corner 211 of the grain 20 to its opposite diagonal or from the side 221 of the grain 20 to its opposite side, so that the grain 20 gradually detaches from the die bonding device 10 and is fixed on the grain placement area 61.
[0052] In a first embodiment of the first example, the vacuum device 40 sequentially draws air from the corner 141 of the die bonding device 10 to the remaining vents 112-114 diagonally opposite to it. The negative pressure 41 sequentially stops adsorbing the portion of the corner 211 of the grain 20 diagonally opposite to it through the remaining vents 112-114 diagonally opposite to it through the corner 141 of the die bonding device 10. The gas supply device 50 sequentially starts blowing air into the remaining vents 112-114 diagonally opposite to it through the corner 141 of the die bonding device 10 to generate airflow and provides positive pressure 51. The positive pressure 51 sequentially starts blowing air into the portion of the corner 211 of the grain 20 diagonally opposite to it through the remaining vents 112-114 diagonally opposite to it through the corner 141 of the die bonding device 10. Therefore, the corner 141 of the die bonding device 10 is used to adsorb the corner 211 of the die 20 towards its opposite corner through negative pressure 41, and then the corner 211 of the die 20 is blown towards its opposite corner through positive pressure 51 to generate pressure difference fluctuation 72. The pressure difference fluctuation 72 can further enable the corner 211 of the die 20 to form a bonding wave 71 after contacting the die placement area 61, and guide the bonding wave 71 to expand from the corner 211 of the die 20 towards its opposite corner, so that the die 20 gradually detaches from the die bonding device 10 and is fixed on the die placement area 61.
[0053] In a second embodiment of the first embodiment, the vacuum device 40 sequentially stops evacuating air from the side 151 of the die bonding device 10 toward the other side through the remaining vents 112-114. The negative pressure 41 sequentially stops adsorbing the portion of the side 221 of the crystal grain 20 toward the other side through the remaining vents 112-114 of the side 151 of the die bonding device 10 toward the other side. The gas supply device 50 sequentially starts blowing air into the remaining vents 112-114 of the side 151 of the die bonding device 10 to generate airflow and provides a positive pressure 51. The positive pressure 51 sequentially starts blowing air into the portion of the side 221 of the crystal grain 20 toward the other side through the remaining vents 112-114 of the side 151 of the die bonding device 10. Therefore, the portion of the side 151 of the die bonding device 10 that faces the opposite side is adsorbed by the negative pressure 41, and then the portion of the side 221 of the die 20 that faces the opposite side is blown by the positive pressure 51 to generate a pressure difference fluctuation 72. The pressure difference fluctuation 72 can further enable the side 221 of the die 20 to form an adhesion wave 71 after contacting the die placement area 61, and guide the adhesion wave 71 to expand from the side 221 of the die 20 to the opposite side, so that the die 20 gradually detaches from the die bonding device 10 and is fixed on the die placement area 61.
[0054] Step S5, as follows Figure 1 and Figure 10 As shown, the crystal 20 is completely fixed on the crystal placement area 61. Specifically, when the negative pressure 41 is completely stopped, the crystal bonding device 10 no longer fixes the crystal 20, and the positive pressure 51 continues to blow, so that the crystal 20 can be completely fixed on the crystal placement area 61.
[0055] Please see Figure 11 and Figure 12 The difference between the second embodiment and the first embodiment is that the die bonding device 10A has six vents 111-116. These vents 111-114 penetrate the four corners 141-144 of the bottom surface of the die bonding device 10A, respectively. Vents 115 and 116 penetrate the two opposite sides 152 and 154 of the bottom surface of the die bonding device 10A and are located between two of the corners 141-144. Apart from this, the remaining technical features of the second embodiment are the same as those of the first embodiment.
[0056] Please see Figure 13 and Figure 14 Regarding step S3, the two implementation methods of the second embodiment are exactly the same as those of the first embodiment.
[0057] Please see Figure 15 and Figure 16The third embodiment differs from the first embodiment in the following ways: First, the die bonding device 10B has nine vents 111-119. These vents 111-114 penetrate the four corners 141-144 of the bottom surface of the die bonding device 10B, and these vents 115-118 penetrate the four sides 151-154 of the bottom surface of the die bonding device 10B and are located between the corners 141-144. Vent 119 penetrates the center of the bottom surface of the die bonding device 10B. Second, the bottom surface of the die bonding device 10B does not have a groove 12 or a protrusion 13. Apart from this, the remaining technical features of the third embodiment are completely the same as those of the first embodiment.
[0058] Please see Figure 17 and Figure 18 Regarding step S3, the two implementation methods of the third embodiment are exactly the same as those of the first embodiment.
[0059] Please see Figure 19 and Figure 20 The difference between the fourth embodiment and the first embodiment is that the die bonding device 10C has two vents 111 and 114, which penetrate two corners 141 and 144 on the bottom surface of the die bonding device 10C, respectively, and the two corners 141 and 144 are diagonally opposite. Apart from this, the other technical features of the fourth embodiment are the same as those of the first embodiment.
[0060] Please see Figure 21 Regarding step S3, the implementation method of the fourth embodiment is the same as the first implementation method of the first embodiment. The fourth embodiment does not have the second implementation method of the first embodiment.
[0061] Please see Figure 22 and Figure 23 The difference between the fifth embodiment and the first embodiment is that in step S4, the bonding wave 71 extends from the corner 211 of the die 20 to its opposite diagonal or from the side 221 of the die 20 to its opposite side. Then, the portion of the die bonding device 10 from the corner 141 to its opposite diagonal is gradually weakened by the positive pressure 51 and further switched to the negative pressure 41. Or, the portion of the side 151 of the die bonding device 10 to its opposite side is gradually weakened by the positive pressure 51 and further switched to the negative pressure 41, so that the die 20 gradually detaches from the die bonding device 10 and is fixed on the die placement area 61.
[0062] In summary, the present invention can control the corner 211 or side 221 of the die 20 to contact the die placement area 61 through the non-impact positive pressure 51. The force of the die 20 contacting the substrate 60 is limited to the mass of the die 20, and the force is very small, so it will not damage the die 20. Moreover, there is no need to install elastic elements, and the manufacturing cost is low.
[0063] Furthermore, the present invention can completely fix the die 20 onto the die placement area 61 by means of the bonding wave 71, so that the die 20 can be accurately placed on the die placement area 61.
[0064] Furthermore, this invention can provide a pressure difference fluctuation 72 by controlling the switching between negative pressure 41 and positive pressure 51. The pressure difference fluctuation 72 forms a bonding wave 71, which is then guided to diffuse. Therefore, the die 20 can be tightly bonded to the substrate 60, completely eliminating the possibility of air bubbles being trapped between the die 20 and the substrate 60. There will be no voids between the die 20 and the substrate 60, improving the yield of products manufactured from the die 20 in subsequent processing.
[0065] Furthermore, the present invention can gradually reduce the positive pressure 51 and further switch to the negative pressure 41 to control the grain 20 to adhere to the grain placement area 61 at an appropriate bonding speed, thereby avoiding damage, skewing or bending of the grain.
[0066] It is worth mentioning that, since the corner or side contact non-impact die bonding method of the present invention was developed for hybrid bonding technology, and hybrid bonding technology is a tin-free bonding method, the present invention selects tin-free balls and copper pillar-free die 20 and substrate 60 to emphasize that the method of the present invention is limited to hybrid bonding technology.
[0067] It is important to note that the surfaces of the die 20 and the substrate 60 are crucial during tin-free packaging. After chemical mechanical polishing (CMP), the surfaces of the die and the substrate will be directly joined, so the surfaces of the die 20 and the substrate 60 must be nearly mirror-like. This is because even slight variations in surface roughness can cause bonding failure between the die 20 and the substrate 60. After CMP, the degree of polishing varies depending on the material. Generally, the acceptable range for the degree of polishing error is within ±10nm. Exceeding 10nm can easily lead to two defects: (1) over-polishing of the copper contacts; (2) excessive copper contact margins, resulting in over-polishing of the substrate 60's base.
[0068] The above description is merely for explaining preferred embodiments of the present invention and is not intended to limit the present invention in any way. Therefore, any modifications or changes made to the present invention under the same inventive spirit should still be included within the scope of protection intended by the present invention.
Claims
1. A non-impact force die bonding method of corner or side edge contact, characterized by, Includes the following steps: (a) A die bonding device picks up a die, the surface of which is free of tin balls and copper pillars; (b) The die bonding device moves the die to one side of a die placement area of a substrate, the surface of which is free of solder balls and copper pillars; (c) The die bonding device blows a corner or side of the die with a positive pressure, causing the corner or side of the die to flex and deform to contact the die placement area; (d) After contacting the grain placement area, the corner or side of the grain forms an adhesion wave, which extends diagonally from the corner of the grain or from the side of the grain to the opposite side, causing the grain to gradually detach from the die bonding device and be fixed to the grain placement area; and (e) The grain is completely fixed on the grain placement area.
2. The method of claim 1, wherein, In step (a), the multiple corners or multiple sides and / or center of the crystal bonding device are adsorbed by a negative pressure to fix the crystal and pick up the crystal; In step (b), multiple corners or sides and / or the center of the crystal bonding device continuously adsorb the multiple corners or sides and / or the center of the crystal by negative pressure to fix the crystal; In step (c), one corner or side of the die bonding device is switched from adsorbing the corner or side of the crystal by the negative pressure to blowing the corner or side of the crystal by the positive pressure, while the remaining corners or sides and / or center of the die bonding device are still maintained to adsorb the remaining corners or sides and / or center of the crystal by the negative pressure. In step (d), the corner of the die bonding device adsorbs the diagonal portion of the die through negative pressure, and then sequentially switches to positive pressure blowing the diagonal portion of the die through negative pressure. Alternatively, the side of the die bonding device adsorbs the diagonal portion of the die through negative pressure, and then sequentially switches to positive pressure blowing the diagonal portion of the die through positive pressure. This causes the diagonal portion of the die or the side portion of the die to be sequentially blown by positive pressure to generate a pressure difference fluctuation. This pressure difference fluctuation allows the corner or side of the die to form an adhesion wave after contacting the die placement area, and guides the adhesion wave to extend from the corner of the die to its diagonal or from the side portion of the die to its opposite side, so that the die gradually detaches from the die bonding device and is fixed on the die placement area.
3. The method of claim 2, wherein, The crystal bonding device has multiple pores, which are connected to a vacuum device and a gas supply device. The vacuum device evacuates air from the multiple pores to generate a vacuum and provides the negative pressure. The negative pressure adsorbs the crystal through the multiple pores. The gas supply device blows air into the multiple pores to generate an airflow and provides the positive pressure. The positive pressure blows the crystal through the multiple pores.
4. The method according to claim 3, characterized in that, The die bonding device has two vents, which penetrate two corners of the bottom surface of the die bonding device, and the two corners are diagonal.
5. The method according to claim 3, characterized in that, The die bonding device has four vents, which penetrate the four corners of the bottom surface of the die bonding device.
6. The method according to claim 3, characterized in that, The die bonding device has six pores, four of which penetrate the four corners of the bottom surface of the die bonding device, and the other two pores penetrate the two opposite sides of the bottom surface of the die bonding device and are located between two of the four corners.
7. The method according to claim 3, characterized in that, The die bonding device has nine pores. Four of the nine pores penetrate the four corners of the bottom surface of the die bonding device, and the other four pores penetrate the four sides of the bottom surface of the die bonding device and are located between the four corners. The third pore penetrates the center of the bottom surface of the die bonding device.
8. The method according to claim 3, characterized in that, The bottom surface of the die bonding device forms a groove, the area of which is smaller than the area of the grain, and the plurality of pores communicate with the groove.
9. The method according to claim 3, characterized in that, The bottom surface of the die bonding device forms a groove and has multiple protrusions. The multiple protrusions are located in the groove and are on the same plane as the bottom surface of the die bonding device.
10. The method according to claim 1, characterized in that, In step (a), a first surface of a support device has a plurality of grains, and the die-bonding device picks up one of the plurality of grains from the support device; In step (b), the die bonding device moves from one side of the carrier device to one side of the substrate and is located in a first position. The die bonding device moves from the first position toward the substrate and stops in a second position. When the die bonding device is located in the second position, a gap between the die and the substrate can provide the bonding wave generated after the die contacts the substrate.
11. A non-impact die bonding method for corner or side contact, characterized in that, Includes the following steps: (a) A die bonding device picks up a die, the surface of which is free of tin balls and copper pillars; (b) The die bonding device moves the die to one side of a die placement area of a substrate, the surface of which is free of solder balls and copper pillars; (c) The die bonding device blows a corner or side of the die with a positive pressure, causing the corner or side of the die to flex and deform to contact the die placement area; (d) After the corner or side of the grain contacts the grain placement area, a bonding wave is formed. The bonding wave extends diagonally from the corner of the grain or extends diagonally from the side of the grain to the opposite side. Then, the positive pressure gradually weakens and switches to a negative pressure, causing the grain to gradually detach from the die-bonding device and be fixed to the grain placement area; and (e) The grain is completely fixed on the grain placement area.
12. The method according to claim 11, characterized in that, In step (a), the crystal bonding device uses a negative pressure to adsorb the crystal at multiple corners or sides and / or center of the crystal to fix the crystal and pick up the crystal. In step (b), multiple corners or sides and / or the center of the crystal bonding device continuously adsorb the multiple corners or sides and / or the center of the crystal by negative pressure to fix the crystal; In step (c), one corner or side of the die bonding device is switched from adsorbing the corner or side of the crystal by the negative pressure to blowing the corner or side of the crystal by the positive pressure, while the remaining corners or sides and / or center of the die bonding device are still maintained to adsorb the remaining corners or sides and / or center of the crystal by the negative pressure. In step (d), the corner of the die-bonding device adsorbing the diagonal portion of the grain by negative pressure is sequentially switched to being blown by positive pressure onto the diagonal portion of the grain; or the side of the die-bonding device adsorbing the diagonal portion of the grain by negative pressure is sequentially switched to being blown by positive pressure onto the diagonal portion of the grain. This causes the corner of the grain to its diagonal or the side of the grain to its opposite side to be blown by positive pressure in sequence, generating a pressure difference fluctuation. This pressure difference fluctuation allows the grain to... After the corner or side of the die bonding device contacts the die placement area, it forms a bonding wave and guides the bonding wave to extend from the corner of the die to its opposite diagonal or from the side of the die to its opposite side. Then, the portion of the die bonding device from the corner to its opposite diagonal is gradually weakened by positive pressure and switched to negative pressure, or the portion of the die bonding device from its side to its opposite side is gradually weakened by positive pressure and switched to negative pressure, so that the die gradually detaches from the die bonding device and is fixed on the die placement area.
13. The method according to claim 12, characterized in that, The crystal bonding device has multiple pores, which are connected to a vacuum device and a gas supply device. The vacuum device evacuates air from the multiple pores to generate a vacuum and provides the negative pressure. The negative pressure adsorbs the crystal through the multiple pores. The gas supply device blows air into the multiple pores to generate an airflow and provides the positive pressure. The positive pressure blows the crystal through the multiple pores.
14. The method according to claim 13, characterized in that, The die bonding device has two vents, which penetrate two corners of the bottom surface of the die bonding device, and the two corners are diagonal.
15. The method according to claim 13, characterized in that, The die bonding device has four vents, which penetrate the four corners of the bottom surface of the die bonding device.
16. The method according to claim 13, characterized in that, The die bonding device has six pores, four of which penetrate the four corners of the bottom surface of the die bonding device, and the other two pores penetrate the two opposite sides of the bottom surface of the die bonding device and are located between two of the four corners.
17. The method according to claim 13, characterized in that, The die bonding device has nine pores. Four of the nine pores penetrate the four corners of the bottom surface of the die bonding device, and the other four pores penetrate the four sides of the bottom surface of the die bonding device and are located between the four corners. The third pore penetrates the center of the bottom surface of the die bonding device.
18. The method according to claim 13, characterized in that, The bottom surface of the die bonding device forms a groove, the area of which is smaller than the area of the grain, and the plurality of pores communicate with the groove.
19. The method according to claim 13, characterized in that, The bottom surface of the die bonding device forms a groove and has multiple protrusions. The multiple protrusions are located in the groove and are on the same plane as the bottom surface of the die bonding device.
20. The method according to claim 11, characterized in that, In step (a), a first surface of a support device has a plurality of grains, and the die-bonding device picks up one of the plurality of grains from the support device; In step (b), the die bonding device moves from one side of the carrier device to one side of the substrate and is located in a first position. The die bonding device moves from the first position toward the substrate and stops in a second position. When the die bonding device is located in the second position, a gap between the die and the substrate can provide the bonding wave generated after the die contacts the substrate.