Electroluminescent display

Abstract

This disclosure relates to an electroluminescent display capable of reducing reflection of external light. The electroluminescent display according to this disclosure includes: a substrate comprising a plurality of pixels, each pixel having a light-emitting region and a non-light-emitting region; light-emitting diodes (LEDs) disposed on the light-emitting regions of the substrate; an encapsulation layer covering the LEDs; and a pattern layer comprising light-transmitting regions corresponding to the light-emitting regions and light-blocking regions corresponding to the non-light-emitting regions, and the pattern layer being disposed along a first direction from the substrate, wherein the first direction corresponds to the light emission direction generated by the LEDs.

Description

Technical Field

[0001] This disclosure relates to electroluminescent displays that reduce the reflection of external light. Specifically, this disclosure relates to electroluminescent displays that prevent the reflection of external light without the need for polarizing (optical) elements. Background Technology

[0002] Recently, various types of displays have been developed, such as cathode ray tubes (CRTs), liquid crystal displays (LCDs), plasma display panels (PDPs), and electroluminescent displays. These types of displays are used to display image data for a variety of products, such as computers, mobile phones, ATMs, and vehicle navigation systems, depending on their unique characteristics and applications.

[0003] In particular, electroluminescent displays, as self-emissive displays, possess excellent optical performance in terms of viewing angle and color accuracy, leading to a gradual expansion of their application areas and attracting attention as image display devices. Electroluminescent displays also exhibit superior color reproduction, making them highly regarded as the best flat panel display devices currently under development.

[0004] In the case of flat panel displays, such as electroluminescent displays, there is a problem of external light being reflected, leading to a degradation in display quality. To suppress external light reflection, methods using optical elements such as polarizing films or polarizers have been proposed. However, because the amount of light provided by the luminescent material is reduced due to the optical elements, a decrease in brightness occurs. To prevent brightness degradation, higher power should be used, which leads to increased power consumption. Therefore, there is a need to develop new technologies to suppress external light reflection without using optical elements that cause brightness degradation in the display. Summary of the Invention

[0005] Regarding the solution to the above problems, the purpose of this disclosure is to provide an electroluminescent display that suppresses external light reflection without causing brightness degradation of the display. Another purpose of this disclosure is to provide an electroluminescent display that reduces external light reflection and prevents brightness degradation of the display without any optical components.

[0006] To achieve one of the above-mentioned objectives of this disclosure, an electroluminescent display according to an embodiment of this disclosure includes: a substrate including a plurality of pixels, each pixel having a light-emitting region and a non-light-emitting region; a light-emitting diode disposed on the light-emitting region of the substrate; an encapsulation layer covering the light-emitting diode; and a pattern layer including a light-transmitting region corresponding to the light-emitting region and a light-blocking region corresponding to the non-light-emitting region, and the pattern layer being disposed along a first direction from the substrate, wherein the first direction corresponds to the light emission direction of the light generated by the light-emitting diode.

[0007] In one embodiment, the patterned layer comprises a non-liquid crystal dye that transmits visible light by shortening the length of its conjugated structure through irradiation with ultraviolet light of a specific wavelength. By shortening the length of the conjugated structure of the non-liquid crystal dye, the light-transmitting region has a first transmittance of 50% or higher for visible light. By maintaining the length of the conjugated structure of the non-liquid crystal dye, the light-blocking region has a second transmittance of 25% or lower for visible light.

[0008] In one embodiment, the specific wavelength of the ultraviolet light can be selected from the wavelength range of 300 nm to 370 nm.

[0009] In one embodiment, the non-liquid crystal dye includes a first dye, a second dye, and a third dye. Before irradiation with ultraviolet light, the first dye has a first light absorption rate of 75% or higher for visible light in the wavelength range of 380 nm to 480 nm, the second dye has a second light absorption rate of 75% or higher for visible light in the wavelength range of 480 nm to 600 nm, and the third dye has a third light absorption rate of 75% or higher for visible light in the wavelength range of 600 nm to 750 nm.

[0010] In one embodiment, after irradiation with ultraviolet light, the first dye has a first transmittance of 50% to 99% for visible light in the wavelength range of 380 nm to 480 nm, the second dye has a second transmittance of 50% to 99% for visible light in the wavelength range of 480 nm to 600 nm, and the third dye has a third transmittance of 50% to 99% for visible light in the wavelength range of 600 nm to 750 nm.

[0011] In one embodiment, the non-liquid crystal dye includes azo dyes.

[0012] In one embodiment, the electroluminescent display further includes an ultraviolet light blocking layer arranged along a first direction from the patterned layer.

[0013] In one embodiment, the electroluminescent display further includes an oxygen-protecting layer disposed between the pattern layer and the ultraviolet light blocking layer.

[0014] In one embodiment, the electroluminescent display further includes an optical film disposed between the pattern layer and the ultraviolet light blocking layer.

[0015] In one embodiment, the optical film includes either a polarizing layer or a light-absorbing layer.

[0016] In one embodiment, the light-emitting diode emits light in the direction in which the substrate is disposed. A patterned layer is disposed beneath the lower surface of the substrate.

[0017] In one embodiment, the light-emitting diode emits light in the direction in which the encapsulation layer is disposed. A patterned layer is disposed on the top surface of the encapsulation layer.

[0018] In one embodiment, the patterned layer further includes a light-absorbing material.

[0019] The electroluminescent display according to this disclosure does not have the following problem: externally incident light is reflected, thus degrading the display quality. The electroluminescent display according to this disclosure can minimize the reduction in brightness of light emitted by the self-emissive element while suppressing or reducing external light reflection. Therefore, interference with the display light caused by external light reflection can be minimized or eliminated, and high brightness of the display light can be ensured with low power consumption. Attached Figure Description

[0020] The accompanying drawings are included to provide a further understanding of this disclosure, and are incorporated into and constitute a part of this application. The drawings illustrate embodiments of the disclosure and, together with the description, serve to explain the principles of the disclosure. In the drawings:

[0021] Figure 1 This is a diagram illustrating a schematic structure of an electroluminescent display according to the present disclosure.

[0022] Figure 2 This is a circuit diagram illustrating the structure of a pixel according to this disclosure.

[0023] Figure 3 It is a plan view showing the structure of pixels according to this disclosure.

[0024] Figure 4 It is used to illustrate the structure of the electroluminescent display according to the first embodiment of this disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure.

[0025] Figure 5 It is a diagram of chemical structures illustrating the mechanism for altering the light transmittance of non-liquid crystal dyes included in a patterned layer, according to the present disclosure.

[0026] Figures 6A to 6C This is a cross-sectional view showing the structure of an anti-reflective film provided in an electroluminescent display according to the present disclosure.

[0027] Figure 7 It is used to illustrate the structure of the electroluminescent display according to the second embodiment of this disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure.

[0028] Figure 8 It is used to illustrate the structure of the electroluminescent display according to the third embodiment of this disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure.

[0029] Figure 9 It is used to illustrate the structure of the electroluminescent display according to the fourth embodiment of this disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure.

[0030] Figure 10 It is used to illustrate the structure of the electroluminescent display according to the fifth embodiment of this disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure. Detailed Implementation

[0031] Exemplary embodiments of this disclosure will now be described in detail, examples of which are illustrated in the accompanying drawings. Where possible, the same reference numerals will be used in the drawings to refer to the same or similar parts. It should be noted in the specification that similar reference numerals already used to denote similar elements in other drawings are used for elements whenever possible. In the following description, detailed descriptions of functions and configurations known to those skilled in the art that are not related to the basic configuration of this disclosure will be omitted. The terminology described in the specification should be understood as follows. The advantages and features of this disclosure and its implementation methods will be illustrated by the embodiments described below with reference to the accompanying drawings. However, this disclosure may be implemented in different forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure is thorough and complete and fully conveys the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is limited only by the scope of the claims.

[0032] The shapes, dimensions, scales, angles, and figures disclosed in the accompanying drawings, used to describe embodiments of this disclosure, are merely examples, and therefore, this disclosure is not limited to the details shown. Similar reference numerals always refer to similar elements. In the following description, detailed descriptions of related known functions or configurations will be omitted where it is determined that such detailed descriptions would unnecessarily obscure the focus of this disclosure.

[0033] When using the terms "comprising," "having," and "including" as described in this specification, another part may also exist unless "only" is used. Unless otherwise stated, singular terms may include plural forms.

[0034] When describing a component, although not explicitly described, the component is interpreted as including a tolerance range.

[0035] When describing positional relationships, for example, when the positional order is described as "on," "above," "below," and "near," it may include cases where there is no contact between them, unless "exactly" or "directly" is used. If it is said that the first element is "on" the second element, it does not mean that the first element is substantially above the second element in the drawing. The upper and lower parts of an object can vary depending on the object's orientation. Therefore, in the drawing or in actual configuration, the case of the first element being "on" the second element includes both the case of the first element being "below" the second element and the case of the first element being "above" the second element.

[0036] For example, when describing temporal relationships, discontinuous cases can be included when the time sequence is described as "after", "following", "next", and "before", unless "exactly" or "directly" is used.

[0037] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0038] In describing the elements of this disclosure, terms such as first, second, A, B, (a), and (b) may be used. These terms are merely for distinguishing an element from other elements, and do not limit the nature, order, sequence, or number of elements. When an element is described as “linked,” “coupled,” or “connected” to another element, that element may be directly connected or connected to other elements, unless otherwise specified as indirectly connected. It should be understood that other elements may be “inserted” between each element that can be connected or coupled.

[0039] It should be understood that the term "at least one" includes all combinations relating to any one of the articles. For example, "at least one of the first element, the second element, and the third element" can include all combinations of two or more elements selected from the first, second, and third elements, as well as each of the first, second, and third elements.

[0040] Those skilled in the art will fully understand that the features of the various embodiments of this disclosure can be coupled or combined with each other in part or in whole, and can interoperate with each other and be technically driven in various ways. Embodiments of this disclosure can be implemented independently of each other or can be implemented together in an interdependent relationship.

[0041] In the following, examples of display devices according to this disclosure will be described in detail with reference to the accompanying drawings. When assigning reference numerals to elements in each drawing, identical parts may be given the same reference numerals as much as possible, even if they are shown in different drawings. For ease of description, the scale of the elements shown in the drawings differs from the actual scale and is not limited to the scale shown in the drawings. Figure 1 This is a diagram illustrating a schematic structure of an electroluminescent display according to the present disclosure. Figure 1 In this diagram, the X-axis can be parallel to the direction of the scan line, the Y-axis can be parallel to the direction of the data line, and the Z-axis can represent the thickness direction of the display.

[0042] Reference Figure 1 The electroluminescent display includes a substrate 110, a gate (or scan) driver 200, a data pad portion 300, a source driver IC (integrated circuit) 410, a flexible film 430, a circuit board 450, and a timing controller 500.

[0043] The substrate 110 may include an electrically insulating material or a flexible material. The substrate 110 may be made of glass, metal, or plastic, but is not limited to these. When the electroluminescent display is a flexible display, the substrate 110 may be made of a flexible material such as plastic. For example, the substrate 110 may include a transparent polyimide material.

[0044] The substrate 110 may include a display area DA and a non-display area NDA. The display area DA, which serves as the area for presenting video images, may be defined as a large portion of the central area of ​​the substrate 110, but is not limited thereto. Multiple scan lines (or gate lines), multiple data lines, and multiple pixels may be formed or disposed within the display area DA. Each pixel may include multiple sub-pixels. Each sub-pixel includes both scan lines and data lines.

[0045] The non-display area NDA, which is a region that does not display video images, can be defined in the peripheral region of the substrate 110 surrounding all or part of the display area DA. A gate driver 200 and a data pad portion 300 can be formed or disposed in the non-display area NDA.

[0046] The gate driver 200 can provide a scan (or gate) signal to the scan line according to the gate control signal received from the timing controller 500. The gate driver 200 can be formed in a non-display area NDA on either side of the display area DA on the substrate 110, as a GIP (gate in panel) type. GIP type means that the gate driver 200 is formed directly on the substrate 110.

[0047] The data pad section 300 can provide data signals to the data lines according to the data control signals received from the timing controller 500. The data pad section 300 can be made into a driver chip and mounted on the flexible film 430. In addition, the flexible film 430 can be attached to the non-display area NDA on either side of the display area DA on the substrate 110 as a TAB (Tape-on Auto-pack) type.

[0048] The source driver IC 410 can receive digital video data and source control signals from the timing controller 500. The source driver IC 410 can convert the digital video data into analog data voltages based on the source control signals and then supply them to the data lines. When the source driver IC 410 is manufactured as a chip, it can be mounted on a flexible film 430 as a COF (chip-on-film) type or a COP (chip-on-plastic) type.

[0049] The flexible film 430 may include multiple first connections connecting the data pad portion 300 to the source driver IC 410, and multiple second connections connecting the data pad portion 300 to the circuit board 450. An anisotropic conductive film can be used to attach the flexible film 430 to the data pad portion 300, allowing the data pad portion 300 to be connected to the first connections of the flexible film 430.

[0050] The circuit board 450 can be attached to the flexible film 430. The circuit board 450 may include multiple circuits implemented as driver chips. For example, the circuit board 450 may be a printed circuit board or a flexible printed circuit board.

[0051] The timing controller 500 can receive digital video data and timing signals from an external system board via cables from the circuit board 450. The timing controller 500 can generate gate control signals for controlling the operating timing of the gate driver 200 and source control signals for controlling the source driver IC 410 based on the timing signals. The timing controller 500 can provide gate control signals to the gate driver 200 and source control signals to the source driver IC 410. Depending on the product type, the timing controller 500 and the source driver IC 410 can be integrated into a single chip and mounted on the substrate 110.

[0052] Figure 2 This is a circuit diagram illustrating the structure of a pixel according to this disclosure. Figure 3 It is a plan view showing the structure of pixels according to this disclosure.

[0053] Reference Figures 2 to 3The electroluminescent display according to this disclosure may include a plurality of pixels P arranged in a matrix. A pixel P of the electroluminescent display may be defined by a scan line SL, a data line DL, and a drive current line VDD. A pixel P of the electroluminescent display may include sub-pixels that emit one of the primary colors. For example, a pixel P may include a red pixel PR that emits red light, a green pixel PG that emits green light, and a blue pixel PB that emits blue light. Alternatively, a white pixel PW that emits white light may also be included in pixel P.

[0054] Reference Figures 2 to 3 The electroluminescent display according to this disclosure may include a plurality of pixels P arranged in a matrix. A pixel P of the electroluminescent display may be defined by a scan line SL, a data line DL, and a drive current line VDD. A pixel P of the electroluminescent display may include a switching thin-film transistor ST, a driving thin-film transistor DT, a light-emitting diode OLE, and a storage capacitor Cst. The drive current line VDD may be provided with a high-level voltage to drive the light-emitting diode OLE. The area where the lines SL, DL, and VDD are provided may be defined as the line area LA, and the area where the thin-film transistors ST and DT are provided may be defined as the driving area DRA. Furthermore, the area where the light-emitting diode OLE is provided may be defined as the light-emitting area EA.

[0055] <First Implementation Method>

[0056] In the following text, refer to Figure 3 and Figure 4 The following will describe an electroluminescent display according to a first embodiment of the present disclosure. Figure 4 This illustrates the structure of an electroluminescent display according to a first embodiment of the present disclosure, along... Figure 3 A cross-sectional view of the tangent I-I' in the figure.

[0057] Reference Figure 4 A light-shielding layer LS can be formed on the surface of the substrate SUB. The light-shielding layer LS can be configured to correspond to the driving region DRA. The light-shielding layer LS can be used to prevent external light from intruding into and affecting the semiconductor layers of the thin-film transistors ST and DT. A buffer layer BUF can be deposited on the light-shielding layer LS to cover the entire surface of the substrate SUB.

[0058] A switching thin-film transistor (TFT) ST and a driving thin-film transistor (DT) can be formed on the buffer layer (BUF). For example, the switching TFT ST can be located at the intersection of the scan line SL and the data line DL. The switching TFT ST may include a switching gate electrode SG, a switching source electrode SS, and a switching drain electrode SD. The switching gate electrode SG can be connected to the scan line SL. The switching source electrode SS can be connected to the data line DL, and the switching drain electrode SD can be connected to the driving TFT DT. By providing a data signal to the driving TFT DT, the switching TFT ST can select the pixel to be driven.

[0059] The driving thin-film transistor (DT) drives the light-emitting diode (OLE) of the pixel selected by the switching thin-film transistor (ST). The driving DT includes a driving gate electrode (DG), a driving source electrode (DS), and a driving drain electrode (DD). The driving gate electrode (DG) can be connected to the switching drain electrode (SD) of the switching DT. The driving source electrode (DS) can be connected to the driving current line (VSS), and the driving drain electrode (DD) can be connected to the anode electrode (ANO) of the OLE. The storage capacitor (Cst) can be located at the overlap between the driving gate electrode (DG) of the driving DT and the anode electrode (ANO) of the OLE.

[0060] like Figure 4 As shown, the switching thin-film transistor ST and the driving thin-film transistor DT can have a bottom-gate structure, wherein gate electrodes SG and DG are first formed on the substrate SUB. In this case, a gate insulating layer GI can be deposited on the gate electrodes SG and DG, and semiconductor layers SA and DA can be formed on the gate insulating layer GI. Furthermore, source electrodes SS and DS and drain electrodes SD and DD can be formed on the two sides of the semiconductor layers SA and DA, respectively. However, not limited to this, the switching thin-film transistor ST and the driving thin-film transistor DT can also have a top-gate structure, wherein semiconductor layers can be first formed on the substrate SUB.

[0061] A planarization layer PL can be deposited on or above the switching thin-film transistor ST and the driving thin-film transistor DT. The planarization layer PL is used to make the top surface of the substrate including the thin-film transistors ST and DT flat. Preferably, the planarization layer PL can be made of an organic material to ensure the flatness of the top surface of the substrate SUB. In other cases, the planarization layer PL can have a multilayer structure in which at least one inorganic layer and at least one organic layer are alternately stacked.

[0062] The driving thin-film transistor DT can be positioned between the driving current line VDD and the light-emitting diode OLE. The driving thin-film transistor DT can control the amount of current flowing from the driving current line VDD to the light-emitting diode OLE based on the voltage level of the driving gate electrode DG, which is connected to the switching drain electrode SD of the switching thin-film transistor ST.

[0063] An OLE (Optical Light Emitting Diode) may include an anode electrode (ANO), an emissive layer (OL), and a cathode electrode (CAT). An OLE emits light according to the amount of current controlled by a driving thin-film transistor (DT). In other words, an OLE can be driven by the voltage difference between a low-level voltage and a high-level voltage controlled by the driving DT.

[0064] The anode electrode ANO can be formed on the planarization layer PL covering the thin-film transistors ST and DT. The anode electrode ANO can be connected to the driving drain electrode DD of the driving thin-film transistor DT through a contact hole formed in the planarization layer PL. The dam BA can be formed on the anode electrode ANO. The dam BA can define the light-emitting area at the anode electrode ANO by covering the periphery of the anode electrode ANO and exposing the central region of the anode electrode ANO.

[0065] The light-emitting layer OL can be deposited on the top surface of the dam BA and the exposed portion of the anode electrode ANO. The light-emitting layer OL can include organic or inorganic materials for generating light. The light-emitting layers OL can be stacked to cover the entire display area DA on the substrate SUB. In other cases, the light-emitting layer OL can be deposited separately to correspond to each light-emitting area defined by the dam BA and deposited to contact the anode electrode ANO.

[0066] The cathode electrode CAT can be deposited on the light-emitting layer OL. An OLE (Optical Light Emitting Diode) can be formed by a stacked structure consisting of an anode electrode ANO exposed by the diaphragm BA, a light-emitting layer OL contacting the anode electrode ANO, and a cathode electrode.

[0067] An electroluminescent display can have a bottom-emitting structure, in which light emitted from a light-emitting diode (OLE) radiates along a direction toward a substrate SUB having thin-film transistors (ST) and DT. In this case, a color filter CF can be further formed below the OLE. For example, after forming the ST and DT, the color filter CF can be formed corresponding to the light-emitting area. Subsequently, a planarization layer PL can be deposited to cover the ST and DT and the color filter CF. However, this is not the only possibility. In another example, the electroluminescent display can have a top-emitting structure, in which light emitted from the OLE radiates along a direction toward a packaging layer EN formed on the OLE. In this case, the color filter CF can be disposed on or above the OLE.

[0068] The encapsulation layer EN can be formed on the top surface of the substrate SUB, which includes the light-emitting diode OLE. The encapsulation layer EN is used to protect the light-emitting diode OLE from foreign matter that may intrude from the external environment.

[0069] The encapsulation layer EN may include at least one inorganic layer and at least one organic layer. In one example, the encapsulation layer EN may be formed by sequentially stacking a first inorganic layer PAS1, an organic layer PCL, and a second inorganic layer PAS2. The first inorganic layer PAS1 and the second inorganic layer PAS2 may be used to prevent the penetration of moisture and gases from the external environment. The first inorganic layer PAS1 and the second inorganic layer PAS2 may be formed of inorganic materials such as silicon oxides and silicon nitrides. The organic layer PCL may include an organic material for covering foreign matter.

[0070] For bottom-emitting types where light from the light-emitting layer OL is emitted in a direction toward the substrate SUB, an anti-external light reflection film 100 can be attached to the bottom side of the substrate SUB. The anti-external light reflection film 100 may include a pattern layer PF and an ultraviolet light blocking layer UT.

[0071] For example, a patterned layer PF can be attached to the lower surface of the substrate SUB. The patterned layer PF may include a light-blocking region BA and a light-transmitting region TA. The light-blocking region BA can be configured to correspond to the driving region DRA. Additionally, the light-blocking region BA can be configured to correspond to the light-shielding layer LS. Meanwhile, the light-transmitting region TA can be configured to correspond to the light-emitting region EA.

[0072] The patterned layer PF can include a photodegradable material. Specifically, the patterned layer PF can include a dye with a long conjugated structure (PP junction) having N=N double bonds. This long conjugated structure with N=N double bonds absorbs visible light but does not transmit it. However, when irradiated with ultraviolet light, the N=N double bonds can decompose and the length of the conjugated structure shortens, making it transparent and not absorbing visible light. For example, before UV irradiation, the transmittance in the opaque state can be 6% or less, but after UV irradiation, the transmittance can be at least 50% to 99%. Depending on the energy and duration of the UV irradiation, the double bonds can be decomposed to control the length of the conjugated structure. As the total energy of the UV irradiation increases, the conjugated structure can become shorter and the transparency can increase. By controlling the UV irradiation energy or the UV irradiation time, the transmittance of visible light can be adjusted between 50% and 99%.

[0073] For example, the patterned layer PF can include non-liquid crystal azo dyes. While azo dyes exhibit color within a specific wavelength range, they can become transparent when illuminated with ultraviolet light in the 300nm to 370nm wavelength range. Figure 5 As shown, azo dyes can have an N=N double bond structure. Figure 5 This is a diagram of the chemical structure used to illustrate the mechanism for altering the transmittance of a non-liquid crystal dye contained in a patterned layer according to this disclosure. When ultraviolet (UV) light irradiates this area, some N=N double bonds can be broken down, and the transmittance of visible light can increase. For example, as a dye included in the patterned layer PF, a single azo dye can be used, wherein this single azo dye can absorb more than 75% of visible light in the 380 nm to 750 nm range before UV irradiation, but has a higher transmittance of visible light after UV irradiation. Alternatively, various azo dyes can be mixed and used, wherein each azo dye can absorb a specific wavelength of visible light before UV irradiation, but the transmittance of the corresponding wavelength of visible light can increase after UV irradiation.

[0074] For example, the patterned layer PF may include a first azo dye, a second azo dye, and a third azo dye. The first azo dye, before UV irradiation, can absorb 75% or more of visible light in the wavelength range of 380 nm to 480 nm through its conjugated structure, and can have 85% or more transmittance for visible light in other wavelength bands. However, when irradiated with UV light, the transmittance of the first azo dye for all visible light can increase to 90% or more. Similarly, the second azo dye, before UV irradiation, can absorb 75% or more of visible light in the wavelength range of 480 nm to 600 nm through its conjugated structure, and can have 85% or more transmittance for visible light in other wavelength bands. However, when irradiated with UV light, the transmittance of the second azo dye for all visible light can increase to 90% or more. Furthermore, the third azo dye, before UV irradiation, can absorb 75% or more of the visible light in the 600 nm to 750 nm wavelength range through its conjugated structure, and can have 85% or more transmittance for visible light in other wavelength bands. However, when irradiated with UV light, the transmittance of the third azo dye for all visible light can increase to 90% or more. When the first, second, and third azo dyes are mixed to form a film, the film can be made into a black film that has 6% or less transmittance (or 94% or more absorption) for visible light in the 380 nm to 750 nm wavelength band before UV irradiation.

[0075] By mixing these three azo dyes, a patterned layer PF can be formed on the bottom surface of the substrate SUB. Subsequently, ultraviolet light can be irradiated onto the light-emitting region EA, excluding the driving region DRA. As a result, the patterned layer PF can be divided into two regions: a light-transmitting region TA corresponding to the light-emitting region EA and a light-blocking region BA corresponding to the driving region DRA.

[0076] The light-transmitting region TA can be patterned to correspond only to the light-emitting region EA, or to correspond to both the light-emitting region EA and the line region LA. However, it is preferred that, in any case, the light-blocking region BA can be patterned to correspond to the driving region DRA.

[0077] A UV blocking layer UT can be further attached to the lower surface of the patterned layer PF. The UV blocking layer UT prevents the light-blocking capability or performance of the light-blocking region BA from deteriorating due to UV light, including that contained in sunlight incident from the outside of the substrate SUB, being irradiated onto the patterned layer PF. Furthermore, the UV blocking layer UT can be a reinforcing film comprising a material used for UV shielding (or blocking) materials. In this case, the UV blocking layer UT prevents the patterned layer PF from being damaged by external impacts or scratches and blocks UV light.

[0078] In the following text, refer to Figure 6A and Figure 6B The anti-reflective film 100 will be described in detail. Figures 6A to 6C This is a cross-sectional view showing the structure of an anti-reflective film provided in an electroluminescent display according to the present disclosure. Figure 6A and Figure 6B Various configurations with the following structure will be described: wherein the patterned layer PF is formed in the form of a film and can be attached to the substrate SUB using an additional adhesive layer PSA.

[0079] Reference Figure 6A An exemplary anti-reflective film 100 may include an ultraviolet (UV) blocking layer UT, an adhesive pattern layer PPF, and a release film RF. The UV blocking layer UT may be disposed on the top layer. The adhesive pattern layer PPF, comprising adhesive material and azo dye, may be disposed below the UV blocking layer UT. Figure 6A The illustration shows an adhesive patterned layer PPF patterned into two portions corresponding to a light-blocking region BA and a light-transmitting region TA. However, this is not the only limitation. Before being attached to the substrate SUB or irradiated with UV light, the adhesive patterned layer PPF may be applied only to the light-blocking region BA.

[0080] Specifically, an adhesive pattern layer PPF can be formed by mixing an azo dye with an optically transparent adhesive (OCA) or a pressure-sensitive adhesive (PSA). The adhesive pattern layer PPF is deposited on one side of a UV blocking layer UT, and a release film RF can be deposited on the adhesive pattern layer PPF to protect it. When UV light is irradiated on the side where the release film RF is located, a light-transmitting region TA and a light-blocking region BA can be formed at the adhesive pattern layer PPF. Subsequently, the pattern layer PF can be attached to the lower surface of the substrate SUB. Figure 4 It shows having Figure 6A The electroluminescent display with an anti-reflective film 100 shown is an example of an external light reflection film.

[0081] Reference Figure 6B Another exemplary anti-reflective film 100 may include an ultraviolet light blocking layer UT, a pattern layer PF, an optical adhesive layer PSA, and a release film RF. The ultraviolet light blocking layer UT may be disposed on the top layer. The pattern layer PF may be disposed below the ultraviolet light blocking layer UT. Figure 6B The patterned layer PF is shown to be patterned into two parts corresponding to the light-blocking region BA and the light-transmitting region TA. However, it is not limited to this. Before being attached to the substrate SUB or irradiated with UV light, the patterned layer PF may be provided only in the light-blocking region BA.

[0082] An optical adhesive layer PSA can be disposed below the lower surface of the pattern layer PF. Using the optical adhesive layer PSA, the pattern layer PF can be attached to the lower surface of the substrate SUB. The release film RF can be a film used to protect the optical adhesive layer PSA. After removing the release film RF, the optical adhesive layer PSA of the anti-reflective film 100 is attached to the lower surface of the substrate SUB.

[0083] Reference Figure 6C Another exemplary anti-reflective film 100 may include an ultraviolet light blocking layer UT, an oxygen-proof layer OB, a pattern layer PF, an optical adhesive layer PSA, and a release film RF. Regarding... Figure 6B Descriptions of the same components shown are not repeated. The oxygen-resistant layer OB may include a material for absorbing oxygen that may penetrate from the external environment. The oxygen-resistant layer OB may be a protective layer for preventing oxygen from penetrating the pattern layer PF. When azo dyes are overexposed to oxygen, the properties of the azo dyes may change, and the light transmittance may change. To prevent this problem, it is preferable that the oxygen-resistant layer OB may be disposed on the upper surface of the pattern layer PF.

[0084] exist Figure 4 In the structure shown, without the anti-external light reflection film 100, external light incident downwards from the substrate SUB may be reflected by various elements formed on the substrate SUB and identified by an observer. Due to the external light, the image information provided by the light-emitting area EA may not be correctly identified. Although the light-shielding layer LS is disposed below the driving area DRA, it is preferable to further add the anti-external light reflection film 100 according to this disclosure to completely prevent external light reflection, since approximately 10% to 15% of the light is also reflected from the light-shielding layer LS.

[0085] Because the light-blocking region BA of the patterned layer PF according to this disclosure has the characteristic of absorbing visible light using the chemical properties of the dye, the visible light absorption rate can be reduced to 6% or lower. Furthermore, by controlling the wavelength or irradiation time of ultraviolet light, the visible light transmittance in the light-transmitting region TA can be freely adjusted according to the energy of the ultraviolet light.

[0086] For example, the light-transmitting region TA can have 95% or higher visible light transmittance. In this case, 95% or more of the light emitted from the light-emitting diode OLE is transmitted, ensuring high brightness. However, external light incident through the light-transmitting region TA may also be reflected by the cathode electrode CAT, and 95% or more of the reflected light may be perceived by the observer.

[0087] To reduce the amount of external light reflected from the light-emitting region EA, the visible light transmittance in the light-transmitting region TA can be adjusted to between 50% and 90%, as described above. When the visible light transmittance of the light-transmitting region TA is below 50%, the brightness of the light provided by the light-emitting diode OLE may be too low, thus potentially degrading the display quality.

[0088] The visible light transmittance of the light-transmitting region TA can be appropriately adjusted according to the application area of ​​the display presented in this disclosure. For example, when the observer is exposed to external light providing strong brightness, the visible light transmittance of the light-transmitting region TA is preferably adjusted to be as low as possible. As another example, when the influence from external light is minimal, such as when the display is primarily used indoors or applied to a vehicle dashboard, the visible light transmittance of the light-transmitting region TA is preferably adjusted to be high.

[0089] <Second Implementation Method>

[0090] In the following text, reference will be made to Figure 7 The second embodiment based on this disclosure is described. Figure 7 This is used to illustrate the structure of the electroluminescent display according to the second embodiment of this disclosure, along... Figure 3 The cross-sectional view is shown along tangent I-I'. The structure of the electroluminescent display according to the second embodiment can be very similar to that of the electroluminescent display according to the first embodiment. The difference may lie in the structure of the anti-external light reflection film 100. Therefore, unless necessary, the description of the same components will not be repeated.

[0091] Reference Figure 7 The electroluminescent display according to the second embodiment of this disclosure may include a substrate SUB, thin-film transistors ST and DT, light-emitting diodes OLE, an encapsulation layer EN, and an anti-reflective film 100. On the upper surface of the substrate SUB, the thin-film transistors ST and DT, the light-emitting diodes OLE, and the encapsulation layer EN may be arranged to be stacked sequentially. The anti-reflective film 100 may be attached to the underside of the lower surface of the substrate SUB.

[0092] The anti-reflective film 100 may include a pattern layer PF, a polarizing layer POL, and an ultraviolet light blocking layer UT. The pattern layer PF may include a light-blocking region BA and a light-transmitting region TA. The light-blocking region BA may be configured to correspond to the driving region DRA. Additionally, the light-blocking region BA may be configured to correspond to the light-shielding layer LS. Simultaneously, the light-transmitting region TA may be configured to correspond to the light-emitting region EA.

[0093] The patterned layer PF may include a light-decomposing material. A polarizing layer POL may be disposed below the lower surface of the patterned layer PF. The polarizing layer POL may be an optical film for preventing the reflection of external light. The polarizing layer POL can prevent the reflection of external light by utilizing the linear polarization characteristics of light. However, within a viewing angle, the polarization angle between the absorption axis of the polarizing layer POL and the linearly polarized reflected light traveling at that viewing angle varies, causing the reflected light to potentially leak. Therefore, in the second embodiment of this disclosure, the reflection of external light can be prevented more effectively by utilizing a combination of the polarizing layer POL and the patterned layer PF.

[0094] Specifically, the polarizing layer POL prevents external light incident on the light-transmitting region TA from being reflected. Therefore, even when the visible light transmittance of the light-transmitting region TA in the patterning layer PF is adjusted to 95% or higher, external light reflection can be suppressed. As a result, the electroluminescent display according to the second embodiment can minimize external light reflection and maximize the luminous efficiency of the light emitted from the light-emitting diode OLE.

[0095] The ultraviolet (UV) blocking layer UT can be attached to the lower surface of the polarization layer POL. The UV blocking layer UT can prevent the UV blocking performance of the light blocking region BA from being degraded due to UV light included in sunlight incident from the outside of the substrate SUB being irradiated onto the pattern layer PF.

[0096] In passing Figure 7 In the second embodiment described, the adhesive layer is not included in the anti-reflective film 100. This can be achieved by utilizing, for example... Figure 6A The adhesive pattern layer PPF shown is used to form the anti-external light reflection film 100. However, it is not limited to this; for other examples, the anti-external light reflection film 100 may include an optical adhesive layer PSA, such as... Figure 6B and Figure 6C As shown in the figure.

[0097] <Third Implementation Method>

[0098] In the following text, reference will be made to Figure 8 The third embodiment based on this disclosure is described. Figure 8 It is used to illustrate the structure of the electroluminescent display according to the third embodiment of this disclosure, along... Figure 3 The cross-sectional view is shown along tangent I-I'. The structure of the electroluminescent display according to the third embodiment can be very similar to that of the electroluminescent display according to the first embodiment. The difference may lie in the structure of the anti-external light reflection film 100. Therefore, unless necessary, the description of the same components will not be repeated.

[0099] Reference Figure 8The electroluminescent display according to the third embodiment of this disclosure may include a substrate SUB, thin-film transistors ST and DT, light-emitting diodes OLE, an encapsulation layer EN, and an anti-reflective film 100. On the upper surface of the substrate SUB, the thin-film transistors ST and DT, the light-emitting diodes OLE, and the encapsulation layer EN may be arranged to be stacked sequentially. The anti-reflective film 100 may be attached to the lower surface of the substrate SUB.

[0100] The anti-reflective film 100 may include a pattern layer PF and an ultraviolet light blocking layer UT. The pattern layer PF may include a light-blocking region BA and a semi-transparent region HTA. The light-blocking region BA may be configured to correspond to the driving region DRA. Additionally, the light-blocking region BA may be configured to correspond to the light-shielding layer LS. Meanwhile, the semi-transparent region HTA may be configured to correspond to the light-emitting region EA.

[0101] The pattern layer PF may include a non-liquid crystal azo dye and a light-absorbing material. Here, the light-absorbing material may be a dye or pigment that absorbs visible light with wavelengths ranging from 380 nm to 780 nm. By irradiating the pattern layer PF with ultraviolet light, a light-blocking region BA and a semi-transparent region HTA can be defined. The light-blocking region BA may be in a state where the azo dye absorbs visible light upon irradiation with ultraviolet light. On the other hand, the semi-transparent region HTA contains the light-absorbing material, and therefore, the amount of light passing through the semi-transparent region HTA can be reduced by 20% to 50% by adjusting the content of the light-absorbing material.

[0102] For example, the semi-transparent region HTA may include a light-absorbing material to reduce the amount of light transmitted through it by 30%. In this case, approximately 70% of the external light incident on the semi-transparent region HTA can pass through it. The transmitted light can then be reflected by the cathode electrode CAT and pass through the semi-transparent region HTA again, allowing approximately 70% of the reflected light to exit. Therefore, approximately 49% of the total external light is reflected and provided to the observer. That is, the external light incident on the semi-transparent region HTA can be reduced by 50% or more. Simultaneously, the amount of light emitted from the light-emitting diode OLE to the semi-transparent region HTA can be reduced by approximately 30%. As a result, the transmittance of light from the light-emitting diode OLE can be ensured to be as high as possible, while simultaneously suppressing the reflectivity of external light.

[0103] An ultraviolet (UV) blocking layer (UT) can be attached to the lower surface of the pattern layer (PF). The UV blocking layer (UT) prevents the light-blocking performance of the light-blocking region (BA) from deteriorating due to sunlight incident from the outside of the substrate (SUB). Additionally, the UV blocking layer (UT) prevents the pattern layer (PF) from being damaged by external impacts.

[0104] In use Figure 8In the third embodiment described, the adhesive layer is not included in the anti-external light reflection film 100. This can be achieved by, for example, in... Figure 6A The adhesive pattern layer PPF shown is distributed with a certain amount of light-absorbing material to form the anti-reflective film 100. However, it is not limited to this; for other examples, the anti-reflective film 100 may include an optical adhesive layer PSA, such as... Figure 6B and Figure 6C As shown in the figure.

[0105] <Fourth Implementation Method>

[0106] In the following text, reference will be made to Figure 9 The fourth embodiment based on this disclosure is described. Figure 9 It is used to illustrate the structure of the electroluminescent display according to the fourth embodiment of this disclosure, along... Figure 3 The cross-sectional view is shown along tangent I-I'. The structure of the electroluminescent display according to the fourth embodiment can be very similar to that of the electroluminescent display according to the first embodiment. The difference may lie in the structure of the anti-external light reflection film 100. Therefore, unless necessary, the description of the same components will not be repeated.

[0107] Reference Figure 9 The electroluminescent display according to the fourth embodiment of this disclosure may include a substrate SUB, thin-film transistors ST and DT, light-emitting diodes OLE, an encapsulation layer EN, and an anti-reflective film 100. On the upper surface of the substrate SUB, the thin-film transistors ST and DT, the light-emitting diodes OLE, and the encapsulation layer EN may be arranged to be stacked sequentially. The anti-reflective film 100 may be attached to the lower surface of the substrate SUB.

[0108] The anti-reflective film 100 may include a light-absorbing layer OTF, a patterned layer PF, and an ultraviolet light-blocking layer UT. The patterned layer PF may include a light-blocking region BA and a light-transmitting region TA. The light-blocking region BA may be configured to correspond to the driving region DRA. Additionally, the light-blocking region BA may be configured to correspond to the light-shielding layer LS. Simultaneously, the light-transmitting region TA may be configured to correspond to the light-emitting region EA.

[0109] The light-absorbing layer OTF may include a light-absorbing material. Here, the light-absorbing material may be a dye or pigment that absorbs visible light with wavelengths in the range of 380 nm to 780 nm. Preferably, the light-absorbing layer OTF may have a light absorption rate of 70% or lower (or a transmittance of 30% or higher) for visible light in the 380 nm to 780 nm band. For example, by adjusting the content of the light-absorbing material in the light-absorbing layer OTF, the transmittance of light passing through the light transmission region TA can be set to 20% to 60%.

[0110] For example, the light-absorbing layer OTF can include a light-absorbing material to reduce the amount of light transmitted through it by 30%. In this case, approximately 70% of the external light incident on the light-transmitting region TA can pass through the light-absorbing layer OTF. The transmitted light can then be reflected by the cathode electrode CAT and pass through the light-absorbing layer OTF again, allowing approximately 70% of the reflected light to exit. Therefore, approximately 49% of the total external light can be reflected and provided to the observer. Furthermore, considering that the transmittance of the light-transmitting region TA can be adjusted between 50% and 99%, the reflectance of external light incident on the light-transmitting region TA can be reduced by much more than 50%. Simultaneously, the amount of light emitted from the light-emitting diode OLE to the semi-transparent region HTA can be reduced by approximately 30%. As a result, the transmittance of light from the light-emitting diode OLE can be ensured to be as high as possible, while simultaneously suppressing the reflectance of external light.

[0111] The light-absorbing layer OTF can be formed into a film by mixing a light-absorbing material with a binder material. For example, the light-absorbing material can be mixed with... Figure 6B or Figure 6C The adhesive layer PSA of the anti-external light reflection film 100 shown is mixed to form the light-absorbing layer OTF.

[0112] An ultraviolet (UV) blocking layer (UT) can be attached to the lower surface of the pattern layer (PF). The UV blocking layer (UT) prevents the light-blocking performance of the light-blocking region (BA) from deteriorating due to sunlight incident from the outside of the substrate (SUB). Additionally, the UV blocking layer (UT) prevents the pattern layer (PF) from being damaged by external impacts.

[0113] In use Figure 9 In the fourth embodiment described, it can be achieved by, for example Figure 6A The adhesive layer PSA shown is used to form an anti-reflective film 100 by distributing a certain amount of light-absorbing material. However, it is not limited to this; for other examples, an OTF light-absorbing layer can be used instead. Figure 7 The polarizing layer POL shown in the second embodiment is used to manufacture the anti-external light reflection film 100.

[0114] <Fifth Implementation Method>

[0115] In the following text, reference will be made to Figure 10 The fifth embodiment based on this disclosure is described. Figure 10 It is used to illustrate the structure of the electroluminescent display according to the fifth embodiment of this disclosure, along... Figure 3A cross-sectional view along tangent I-I' in the diagram. So far, bottom-emitting type has been described in the embodiments. However, it is not limited thereto, and the anti-external light reflection film 100 can be applied to top-emitting type. Top-emitting type refers to light generated from the light-emitting diode OLE along the direction... Figure 4 The structure shown is oriented with respect to the direction of the encapsulation layer EN.

[0116] In this configuration, an observer can view the display along the direction of the encapsulation layer EN. Therefore, the anti-reflective film 100 can be disposed on the top surface of the encapsulation layer EN.

[0117] For example, the electroluminescent display according to the fifth embodiment of this disclosure may include a substrate SUB, thin-film transistors ST and DT, light-emitting diodes OLE, a color filter layer CFL, an encapsulation layer EN, and an anti-reflective film 100. On the upper surface of the substrate SUB, the thin-film transistors ST and DT, the light-emitting diodes OLE, and the encapsulation layer EN may be arranged to be stacked sequentially. The color filter layer CFL may be disposed on the encapsulation layer EN.

[0118] The color filter layer CFL may include a color filter CF and a black matrix BM. The color filter CF may be configured to correspond to the light-emitting region EA, and the black matrix BM may be configured to correspond to the driving region DRA. Alternatively, although not shown in the figures, the color filter layer CFL may be positioned between the cathode electrode CAT and the encapsulation layer EN.

[0119] An anti-reflective film 100 can be attached to the top surface of the color filter layer CFL. The anti-reflective film 100 may include a pattern layer PF and an ultraviolet light blocking layer UT. The pattern layer PF may include a light-blocking region BA and a light-transmitting region TA. The light-blocking region BA may be configured to correspond to the driving region DRA. Simultaneously, the light-transmitting region TA may be configured to correspond to the emitting region EA.

[0120] An ultraviolet (UV) blocking layer (UT) can be attached to the lower surface of the pattern layer (PF). The UV blocking layer (UT) prevents the light-blocking performance of the light-blocking region (BA) from deteriorating due to sunlight incident from the outside of the substrate (SUB). Additionally, the UV blocking layer (UT) prevents the pattern layer (PF) from being damaged by external impacts.

[0121] Although not shown in the figures, a display including a touch-sensing layer may include an anti-reflective film 100 according to the present disclosure. For example, the touch-sensing layer may be disposed between the color filter layer CFL and the anti-reflective film 100.

[0122] Alternatively, a cover film may be included. In this case, the cover film may be attached to the anti-external light reflection film 100. For another example, the cover film may be combined with the ultraviolet light blocking layer UT in a single film or plate.

[0123] The electroluminescent display according to this disclosure is characterized by the use of a non-liquid crystal dye that increases light transmittance upon exposure to ultraviolet light. Compared to dyes whose light absorption increases with ultraviolet light exposure, the device's safety is significantly superior. For example, because the non-liquid crystal dye according to this disclosure can be used for extended periods, its light absorption does not deteriorate due to environmental changes (such as temperature), thus maintaining consistent display quality.

[0124] The features, structures, effects, etc., described in the examples above of this disclosure are included in at least one example of this disclosure, but are not limited to one example. Furthermore, the features, structures, effects, etc., described in at least one example can be implemented by those skilled in the art with respect to other examples in a combination or modification manner. Therefore, content relating to these combinations and variations should be construed as being included within the scope of this disclosure.

[0125] It will be apparent to those skilled in the art that various modifications and variations can be made to this disclosure without departing from its concept or scope. Therefore, this disclosure is intended to cover modifications and variations thereof, provided that such modifications and variations fall within the scope of the appended claims and their equivalents. These and other changes to the embodiments can be made based on the detailed description above. Generally, the terminology used in the appended claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be construed as including all possible embodiments and the full scope of the equivalents enjoyed by these claims. Therefore, the claims are not limited by this disclosure.

Claims

1. An electroluminescent display, comprising: A substrate comprising multiple pixels, each pixel having a light-emitting area and a non-light-emitting area; Light-emitting diodes arranged in the light-emitting region on the substrate; The encapsulation layer covering the light-emitting diode; as well as A patterned layer, comprising a light-transmitting region corresponding to the light-emitting region and a light-blocking region corresponding to the non-light-emitting region, and the patterned layer being arranged in a first direction from the substrate. Wherein, the first direction corresponds to the direction of light emission generated by the light-emitting diode. The pattern layer includes a non-liquid crystal dye, which comprises: The first dye has a first light absorption rate of 75% or higher for visible light in the wavelength range of 380 nm to 480 nm before being irradiated with ultraviolet light. The second dye, prior to irradiation with the ultraviolet light, exhibits a second light absorption rate of 75% or higher for visible light in the wavelength range of 480 nm to 600 nm; and The third dye, before being irradiated with the ultraviolet light, has a third light absorption rate of 75% or higher for visible light in the wavelength range of 600 nm to 750 nm, and In this process, the non-liquid crystal dye transmits visible light as the length of the conjugated structure is shortened by irradiating it with ultraviolet light of a specific wavelength.

2. The electroluminescent display according to claim 1, in, By shortening the length of the conjugated structure of the non-liquid crystal dye, the light-transmitting region has a first transmittance of 50% or higher for visible light, and Wherein, by maintaining the length of the conjugated structure of the non-liquid crystal dye, the light-blocking region has a second transmittance of 25% or less of visible light.

3. The electroluminescent display according to claim 2, wherein, The specific wavelength of the ultraviolet light is selected from the wavelength range of 300 nm to 370 nm.

4. The electroluminescent display according to claim 1, wherein, After being irradiated with the ultraviolet light The first dye has a first transmittance of 50% to 99% for visible light in the wavelength range of 380 nm to 480 nm. The second dye has a second transmittance of 50% to 99% for visible light in the wavelength range of 480 nm to 600 nm, and The third dye has a third transmittance of 50% to 99% for visible light in the 600 nm to 750 nm wavelength range.

5. The electroluminescent display according to claim 2, wherein, The non-liquid crystal dyes include azo dyes.

6. The electroluminescent display according to claim 1, further comprising: An ultraviolet light blocking layer is arranged in the first direction from the patterned layer.

7. The electroluminescent display according to claim 6, further comprising: An oxygen-protecting layer is disposed between the patterned layer and the ultraviolet light blocking layer.

8. The electroluminescent display according to claim 6, further comprising: An optical film disposed between the patterned layer and the ultraviolet light blocking layer.

9. The electroluminescent display according to claim 8, wherein, The optical film includes either a polarizing layer or a light-absorbing layer.

10. The electroluminescent display according to claim 9, wherein, The light-emitting diode emits light in the direction in which the substrate is disposed, and The pattern layer is disposed below the lower surface of the substrate.

11. The electroluminescent display according to claim 1, wherein, The light-emitting diode emits light in the direction in which the encapsulation layer is disposed, and The pattern layer is disposed on the top surface of the encapsulation layer.

12. The electroluminescent display according to claim 1, wherein, The patterned layer also includes light-absorbing materials.

13. An electroluminescent display, comprising: A substrate comprising multiple pixels, each pixel having a light-emitting area and a non-light-emitting area; Light-emitting diodes arranged in the light-emitting area of ​​each pixel on the substrate; as well as A patterned layer is disposed beneath the substrate and includes a light-transmitting region corresponding to the light-emitting region and a light-blocking region corresponding to the non-light-emitting region. The light-emitting diode emits light in a direction toward the substrate. The pattern layer includes a non-liquid crystal dye, which comprises: The first dye has a first light absorption rate of 75% or higher for visible light in the wavelength range of 380 nm to 480 nm before being irradiated with ultraviolet light. The second dye, prior to irradiation with the ultraviolet light, exhibits a second light absorption rate of 75% or higher for visible light in the wavelength range of 480 nm to 600 nm; and The third dye, before being irradiated with the ultraviolet light, has a third light absorption rate of 75% or higher for visible light in the wavelength range of 600 nm to 750 nm, and In this process, the non-liquid crystal dye transmits visible light as the length of the conjugated structure is shortened by irradiating it with ultraviolet light of a specific wavelength.

14. An electroluminescent display, comprising: A substrate comprising multiple pixels, each pixel having a light-emitting area and a non-light-emitting area; Light-emitting diodes arranged in the light-emitting area of ​​each pixel on the substrate; The encapsulation layer covering the light-emitting diode; as well as A patterned layer is disposed on the encapsulation layer and includes a light-transmitting region corresponding to the light-emitting region and a light-blocking region corresponding to the non-light-emitting region. The light-emitting diode emits light in a direction toward the encapsulation layer. The pattern layer includes a non-liquid crystal dye, which comprises: The first dye has a first light absorption rate of 75% or higher for visible light in the wavelength range of 380 nm to 480 nm before being irradiated with ultraviolet light. The second dye, prior to irradiation with the ultraviolet light, exhibits a second light absorption rate of 75% or higher for visible light in the wavelength range of 480 nm to 600 nm; and The third dye, before being irradiated with the ultraviolet light, has a third light absorption rate of 75% or higher for visible light in the wavelength range of 600 nm to 750 nm, and In this process, the non-liquid crystal dye transmits visible light as the length of the conjugated structure is shortened by irradiating it with ultraviolet light of a specific wavelength.

Images