一种整流器及其使用方法
By using a rectifier with a ferroelectric domain wall structure, the ferroelectric layer and electrode layer form or break conductive channels under different voltages, which solves the shortcomings of existing rectifiers in high-frequency and high-current applications, realizes efficient rectification function, and expands the application range of rectifiers.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2020-12-31
- Publication Date
- 2026-07-17
AI Technical Summary
Existing silicon-based PN junction rectifiers have low operating current and low operating frequency, resulting in poor flexibility. Schottky barrier rectifiers have low reverse breakdown voltage and high reverse leakage current, leading to poor performance of rectifiers in high-frequency and high-current applications.
The rectifier, which employs a ferroelectric layer and electrode layer structure, utilizes the unidirectional conductivity of the ferroelectric domain walls to form a conductive channel when an AC signal greater than a preset voltage is applied, thereby achieving high-current and high-frequency rectification. When the voltage is less than the preset voltage, the conductive channel is disconnected, thus expanding the operating voltage range.
It achieves high current and high frequency rectification, is suitable for high voltage and high frequency applications, and is simple to manufacture and flexible to use, thus expanding the application range of rectifier tubes.
Smart Images
Figure CN114695651B_ABST