Perovskite solar cell and preparation method therefor, photovoltaic system

Abstract

The present application is suitable for the perovskite solar cell technical field, and provides a perovskite solar cell, a preparation method thereof and a photovoltaic system. The preparation method of the perovskite solar cell provided by the present application replaces a third laser scribing process by depositing a ferroelectric insulating layer penetrating through a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode on a transparent conductive film layer to complete the segmentation of the perovskite solar cell. On the one hand, the laser scribing can prevent the damage to the perovskite solar cell, and the efficiency loss of the perovskite solar cell is reduced. On the other hand, the ferroelectric polarization field passivates the perovskite pin junction. The built-in field of the perovskite material is enhanced, the separation and transmission of the photo-generated electron-hole pairs are promoted, the splitting of the electron and hole quasi-Fermi energy levels in the perovskite pin junction is intensified, the open-circuit voltage of the battery is further improved, and finally the photoelectric conversion efficiency of the perovskite battery is improved.

Description

Technical Field

[0001] This invention belongs to the field of solar cells, and particularly relates to a perovskite solar cell, its preparation method, and a photovoltaic system. Background Technology

[0002] Perovskite solar cells have attracted widespread attention due to their excellent photoelectric properties, including tunable bandgap, high light absorption coefficient, long carrier lifetime and diffusion length, high defect tolerance, and low-cost low-temperature liquid-phase preparation method. The efficiency of laboratory-fabricated photovoltaic devices has soared from 3.8% in 2009 to 25.5% in 2021 in just over a decade, making them a strong contender for the next generation of photovoltaic materials.

[0003] Upright planar heterostructure (nip-type) perovskite solar cells have been a research hotspot in the perovskite photovoltaic field due to their simple fabrication process and high photoelectric conversion efficiency. However, upright perovskite solar cells suffer from drawbacks such as significant hysteresis, unresolved device stability issues, and difficulties in fabricating flexible devices, hindering large-scale commercial applications. Therefore, inverted planar heterostructure (pin-type) perovskite solar cells, with their negligible hysteresis, good interface stability, and ability to fabricate flexible devices at low temperatures, have attracted increasing attention from researchers. The champion device fabricated in the laboratory has achieved a photoelectric conversion efficiency of 23.7%.

[0004] However, the effective area of ​​a single small-area cell prepared in the laboratory by spin coating is only 0.09 cm². 2 However, the large-scale, large-area requirements of industrial production cannot be met by conventional methods. Therefore, the large-scale fabrication of large-area, high-efficiency perovskite solar cells using methods such as blade coating, slot coating, spraying, and screen printing has become a hot research topic in recent years. Considering issues such as fabrication cost and stability, most companies and research institutions currently use p1-p2-p3 series modules fabricated with pin planar perovskite cell structures as the choice for the industrialization of perovskite solar cells.

[0005] Existing large-area perovskite solar cells are fabricated by dividing them into several perovskite sub-cells connected in series using a three-stage laser scribing process (p1, p2, p3). However, laser scribing can cause some damage to the cells. In particular, the p2 and p3 processes directly cut the perovskite light-absorbing layer and various functional layers, resulting in greater damage to the efficiency of the perovskite solar cells. Summary of the Invention

[0006] The purpose of this invention is to provide a method for preparing perovskite solar cells, aiming to solve the problem of reduced cell efficiency caused by laser scribing in existing large-area perovskite solar cells.

[0007] The present invention is implemented as follows: a perovskite solar cell is provided, comprising a glass substrate, a transparent conductive film layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal electrode arranged sequentially from bottom to top;

[0008] The perovskite solar cell also includes a first groove, a second groove, and a ferroelectric insulating layer arranged at intervals.

[0009] The ferroelectric insulating layer penetrates the hole transport layer, the perovskite light absorption layer, the electron transport layer, and the metal electrode.

[0010] Furthermore, the ferroelectric insulating layer is composed of BaTiO3, PbTiO3, BiFeO3, and Pb(Z) r1-x Ti x It is made from any of the materials in O3.

[0011] Furthermore, the first groove is disposed on the transparent conductive film layer and embedded in the hole transport layer, thereby isolating the transparent conductive film layer into multiple mutually insulated sub-units;

[0012] The second groove extends through the hole transport layer, the perovskite light absorption layer, and the electron transport layer, and is used to embed the metal electrode to achieve series connection between two adjacent perovskite sub-cells.

[0013] This invention also provides a method for fabricating a perovskite solar cell, used to produce the perovskite solar cell described above, the method comprising the following steps:

[0014] Deposit a transparent conductive film layer on a glass substrate;

[0015] A first groove for embedding the hole transport layer is formed by cutting the transparent conductive film layer with a laser.

[0016] A ferroelectric insulating layer is deposited on the transparent conductive film layer, wherein the ferroelectric insulating layer penetrates the hole transport layer, the perovskite light absorption layer, the electron transport layer and the metal electrode;

[0017] A hole transport layer is deposited on the transparent conductive film layer;

[0018] A perovskite light-absorbing layer is fabricated on the hole transport layer;

[0019] An electron transport layer is fabricated on the perovskite light-absorbing layer;

[0020] A second groove is formed by cutting the electron transport layer with a laser, which penetrates the hole transport layer, the perovskite light absorption layer and the electron transport layer.

[0021] The metal electrode is deposited on the electron transport layer and within the second groove;

[0022] The perovskite solar cell is positively ferropolarized using an external power source.

[0023] Furthermore, the step of applying positive ferroelectric polarization to the perovskite solar cell using an external power source also includes the following steps:

[0024] A positive ferroelectric polarization perpendicular to the surface of the perovskite solar cell is applied from the metal electrode to the glass substrate using a constant current voltage source;

[0025] The electric field of the constant current voltage source is greater than that of the ferroelectric coercive field.

[0026] Furthermore, the step of depositing a ferroelectric insulating layer on the transparent conductive film layer includes:

[0027] A metal mask is placed on the transparent conductive film layer;

[0028] The ferroelectric insulating layer was deposited using magnetron sputtering.

[0029] Furthermore, the step of depositing a hole transport layer on the transparent conductive film layer includes:

[0030] The hole transport layer is deposited on the transparent conductive film layer by magnetron sputtering, and the thickness of the hole transport layer is 80-100 nm.

[0031] Furthermore, the step of fabricating an electron transport layer on the perovskite light-absorbing layer includes:

[0032] SnO2 nanoparticles were dissolved in deionized water at a volume ratio of 1:5.

[0033] The perovskite light-absorbing layer was coated using a slot-die coating method.

[0034] An electron transport layer with a thickness of 50-80 nm was prepared by annealing.

[0035] Furthermore, the step of depositing a metal electrode on the electron transport layer includes:

[0036] The metal electrode is deposited on the electron transport layer and in the second groove using a thermal evaporation method, and the thickness of the metal electrode is 50-70 nm.

[0037] The present invention also provides a photovoltaic system, including the perovskite solar cell, inverter, battery pack and controller as described above.

[0038] The method for fabricating perovskite solar cells provided in this invention replaces the third laser scribing process by depositing a ferroelectric insulating layer that penetrates the hole transport layer, perovskite light absorption layer, electron transport layer, and metal electrode on a transparent conductive film layer. This method prevents damage to the perovskite solar cells caused by laser scribing, reducing efficiency loss. Furthermore, the ferroelectric polarization of the perovskite pin junction enhances the built-in field of the perovskite material, promoting the separation and transport of photogenerated electron-hole pairs. It also intensifies the splitting of the quasi-Fermi levels of electrons and holes within the perovskite pin junction, further increasing the open-circuit voltage of the cell and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell provided in an embodiment of the present invention;

[0040] Figure 2 This is a schematic diagram of the fabrication structure of the ferroelectric insulating layer of the perovskite solar cell provided in an embodiment of the present invention.

[0041] Explanation of icon numbers:

[0042] 1. Glass substrate; 2. Transparent conductive film layer; 3. Ferroelectric insulating layer; 4. Hole transport layer; 5. Perovskite light absorption layer; 6. Electron transport layer; 7. Metal electrode; 8. First groove; 9. Second groove; 10. Mask. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0044] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances. The term "and / or" as used herein includes any and all combinations of one or more of the related listed items.

[0045] This invention replaces the third laser scribing process by depositing a ferroelectric insulating layer on a transparent conductive film layer, which connects a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal electrode, to complete the segmentation of perovskite solar cells. On the one hand, this prevents damage to the perovskite solar cells caused by laser scribing, reducing efficiency loss. On the other hand, ferroelectric polarization performs field passivation on the perovskite pin junction, which enhances the built-in field of the perovskite material, promoting the separation and transport of photogenerated electron-hole pairs, and intensifies the splitting of the electron-hole quasi-Fermi levels within the perovskite pin junction, further increasing the open-circuit voltage of the cell and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell.

[0046] Example One

[0047] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of a perovskite solar cell provided in the first embodiment of the present invention. For ease of explanation, only the parts related to the embodiment of the present invention are shown.

[0048] The perovskite solar cell provided in this embodiment of the invention includes, from bottom to top, the following: a glass substrate 1, a transparent conductive film layer 2, a hole transport layer 4, a perovskite light absorption layer 5, an electron transport layer 6, and a metal electrode 7.

[0049] The perovskite solar cell further includes a first groove 8, a second groove 9 and a ferroelectric insulating layer 3 spaced apart; the ferroelectric insulating layer 3 penetrates the hole transport layer 4, the perovskite light absorption layer 5, the electron transport layer 6 and the metal electrode 7.

[0050] Furthermore, the ferroelectric insulating layer 3 is composed of BaTiO3, PbTiO3, BiFeO3, and Pb(Z) r1-x Ti x It is made from any of the materials in O3.

[0051] In this embodiment of the invention, inorganic ferroelectric material Pb(Z) is used. r1-x Ti x O3 (PZT) is used as the material for the ferroelectric insulating layer 3. Ferroelectrics exhibit spontaneous polarization within the Curie temperature range, and their internal ferroelectric domains can be induced by an external electric field to oriented and form a ferroelectric field.

[0052] In this embodiment of the invention, the first groove 8 and the second groove 9 are formed by laser scribing, and both the first groove 8 and the second groove 9 are perpendicular to the glass substrate 1. The ferroelectric insulating layer 3 is arranged parallel to the first groove 8 and the second groove 9. This embodiment uses the ferroelectric insulating layer 3 to replace the third step of laser scribing, reducing the damage to the battery caused by laser scribing. Furthermore, ferroelectric polarization can passivate the pin structure of the perovskite solar cell, improving battery efficiency.

[0053] Furthermore, the transparent conductive film layer 2 is made of one of the following materials: ITO tin-doped indium oxide, FTO fluorine-doped tin oxide, IWO tungsten-doped indium oxide, or ICO cerium-doped indium oxide.

[0054] In this embodiment of the invention, ITO is used as the material for fabricating the transparent conductive film layer 2. Specifically, the transparent conductive film layer 2 is deposited on a transparent glass substrate 1. The transparent conductive film layer fabricated using ITO in this embodiment has high transmittance to visible light, strong reflectivity to infrared light, and high carrier concentration, resulting in good conductivity.

[0055] Furthermore, hole transport layer 4 is composed of PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT:PSS (aqueous polymer solution), Spiro-OMeTAD, Poly-TPD, and NiO. X It is made of any one of the following materials: CuSCN, CuI, or V2O5.

[0056] In this embodiment of the invention, inorganic P-type semiconductor NiO is used. X The material used to fabricate hole transport layer 4 is more suitable for inverted perovskite solar cells and can significantly improve the stability of perovskite solar cells.

[0057] Furthermore, the perovskite light-absorbing layer 5 is made of an organic-inorganic hybrid perovskite with the general formula ABX3, where A is CH3NH3. + (MA + CH(CH2)2 + (FA + ), Cs + At least one of them, B is Pb2 + Sn2 + Ge2 + One of them, X is Cl - ,Br - I - At least one of them.

[0058] In this embodiment of the invention, a MA-free method is used. + Organic-inorganic hybrid perovskite materials FA 0.91 Cs0.09 PbI3, as the material for the perovskite light-absorbing layer 5, increases the crystallinity and stability of the perovskite crystal, improves the open-circuit voltage and fill factor of the battery module, and further enhances the photoelectric conversion efficiency and stability of the solar cell.

[0059] Furthermore, the electron transport layer 6 is made of materials such as PCBM, TiO2, ZnO, SnO2, H-PDI, or F-PDI.

[0060] In this embodiment of the invention, SnO2 nanoparticles are used as the material for the electron transport layer 6.

[0061] Furthermore, the metal electrode is made of one of the following materials: Ag, Au, Cu, and Al.

[0062] In this embodiment of the invention, Ag is used as the material for fabricating the metal electrode, taking into account both electrode conductivity and manufacturing cost.

[0063] Furthermore, the first groove 8 is disposed on the transparent conductive film layer 2, and the hole transport layer 4 is embedded therein, which isolates the transparent conductive film layer into multiple mutually insulated sub-units; the second groove 9 penetrates the hole transport layer 4, the perovskite light absorption layer 5 and the electron transport layer 6, and is used to embed the metal electrode 7, so as to realize the series connection between two adjacent perovskite sub-cells.

[0064] In this embodiment of the invention, the first groove 8 and the second groove 9 are both formed by laser scribing and are arranged parallel to each other. The ferroelectric insulating layer 3 replaces the laser-scibing third groove.

[0065] It is understood that in other embodiments, the number of first grooves 8, second grooves 9, and ferroelectric insulating layers 3 can be set as needed. The perovskite solar cell is divided into multiple perovskite sub-cells connected in series by multiple first grooves 8, the aforementioned second grooves 9, and the ferroelectric insulating layers 3, thereby obtaining a large-area perovskite solar cell.

[0066] This invention replaces the third laser scribing process by depositing a ferroelectric insulating layer on a transparent conductive film layer that connects a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal electrode. This process effectively divides the perovskite solar cell, preventing damage from laser scribing and reducing efficiency loss. Furthermore, ferroelectric polarization passivates the perovskite pin junction, enhancing the built-in field of the perovskite material to promote the separation and transport of photogenerated electron-hole pairs. It also intensifies the splitting of the electron-hole quasi-Fermi levels within the perovskite pin junction, further increasing the open-circuit voltage and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell.

[0067] Example Two

[0068] The second embodiment of the present invention provides a method for fabricating a perovskite solar cell. This method is used to fabricate perovskite solar cells as described in the foregoing embodiments. Specifically, the method includes the following steps:

[0069] Step S11: Deposit a transparent conductive film layer 2 on the glass substrate 1;

[0070] In this embodiment of the invention, before depositing the transparent conductive film layer 2 on the transparent glass substrate 1, the glass substrate must first be cleaned. Specifically, high-transmittance ITO conductive glass is used as the transparent conductive substrate. First, the surface of the ITO substrate is wiped with ethanol-soaked lint-free paper, then ultrasonically cleaned with detergent, deionized water, acetone, and ethanol sequentially for 15-20 minutes, and finally dried in a ventilated oven. The ITO conductive glass is manufactured by depositing a layer of indium tin oxide (commonly known as ITO) film onto a sodium-calcium-based or borosilicate-based substrate glass using magnetron sputtering.

[0071] Step S12: Use a laser to cut the transparent conductive film layer 2 to form a first groove 8 for the hole transport layer 4 to be embedded;

[0072] In this embodiment of the invention, a laser with a wavelength of 900-1200 nm is used to perform laser scribing on the transparent conductive film layer 2 to form a first groove 8. Preferably, a laser with a wavelength of 1064 nm is used for scriber cutting.

[0073] Specifically, in the embodiment of the invention, the cut transparent conductive film layer 2 is cleaned. Specifically, it is ultrasonically cleaned for 15-20 minutes in sequence with detergent, deionized water, acetone and ethanol, dried in a ventilated oven, and then treated with O3UV (ozone and ultraviolet oxidation technology) for 20 minutes, thus completing the cleaning.

[0074] Step S13: Deposit a ferroelectric insulating layer 3 on the transparent conductive film layer 2;

[0075] In this embodiment of the invention, the step of depositing a ferroelectric insulating layer 3 on the transparent conductive film layer 2 includes:

[0076] A metal mask 10 is placed on the transparent conductive film layer;

[0077] Ferroelectric insulating layer 3 was deposited using magnetron sputtering. After deposition, the metal mask 10 was removed.

[0078] In other embodiments, the number of ferroelectric insulating layers 3 is set as needed to facilitate dividing the perovskite solar cell into multiple perovskite sub-cells connected in series.

[0079] Step S14: Deposit hole transport layer 4 on transparent conductive film layer 2;

[0080] In this embodiment of the invention, a NiO layer with a thickness of approximately 80-100 nm is deposited on the transparent conductive film layer 2 using magnetron sputtering. X Thin film. The method for measurement and control sputtering is existing technology and will not be described in detail in this embodiment.

[0081] Step S15: Prepare a perovskite light absorption layer 5 on the hole transport layer 4;

[0082] In this embodiment of the invention, firstly, FA is performed. 0.91 Cs 0.09 To prepare the PbI3 precursor solution, PbI2:FAI:CsI was added to a DMF / DMSO mixture with a volume ratio of 4.75:1 at a chemical ratio of 1:0.91:0.09 until the solution concentration reached 1.25 mol / L. Then, MaCl was added to the solution until its concentration reached 23 mol% to stabilize the phase formation of the perovskite solar cell.

[0083] Secondly, a perovskite thin film is prepared using a slot-die coating method, followed by annealing at 160°C for 10-15 minutes to complete the preparation of the perovskite light-absorbing layer 5. In this embodiment, the slot-die coating method is existing technology and will not be described in detail here.

[0084] Step S16: Prepare an electron transport layer 6 on the perovskite light-absorbing layer 5;

[0085] In this embodiment of the invention, SnO2 nanoparticles are used as the material for fabricating the electron transport layer 6. SnO2 nanoparticles are dissolved in deionized water at a volume ratio of 1:5. After dissolution, the dissolved nanoparticles are coated onto a perovskite film using a slot-die coating method. After annealing at 150°C, an electron transport layer 6 with a thickness of approximately 50-80 nm is prepared.

[0086] Step S17: A second groove 9 for embedding metal electrodes is formed by cutting the electron transport layer 6 with a laser to create a through hole transport layer 4, a perovskite light absorption layer 5, and an electron transport layer 6.

[0087] In this embodiment of the invention, a laser with a wavelength of 400-700 nm is used to perform laser dicing on the electron transport layer 6, forming a second groove 9 that penetrates the hole transport layer 4, the perovskite light absorption layer 5, and the electron transport layer 6 for embedding the metal electrode 7. Specifically, a laser with a wavelength of 532 nm is used for dicing. It is understood that in other embodiments, the number of second grooves 9 can be set as needed.

[0088] In this embodiment, the perovskite solar cell is divided into multiple perovskite sub-cells connected in series by the first groove 8, the second groove 9, and the ferroelectric insulating layer 3, thereby obtaining a large-area perovskite solar cell.

[0089] Step S18: Deposit a metal electrode 7 on the electron transport layer 6;

[0090] In this embodiment of the invention, an Ag electrode is deposited on the electron transport layer 6 and in the second groove 9 by thermal evaporation, and the thickness of the Ag electrode is about 60 nm.

[0091] Step S19: Apply positive ferropolarization to the perovskite solar cell using an external power source.

[0092] In this embodiment of the invention, applying forward ferroelectric polarization to a perovskite solar cell using an external power source further includes the following steps:

[0093] A positive ferroelectric polarization perpendicular to the surface of the perovskite solar cell is applied from the metal electrode to the glass substrate 1 using a constant current voltage source;

[0094] Among them, the electric field of the constant current voltage source is greater than that of the ferroelectric coercive field.

[0095] The perovskite solar cells prepared by the method proposed in this invention use a ferroelectric insulating layer to replace the third laser scribing process to complete the segmentation of the perovskite solar cells. On the one hand, this prevents damage to the perovskite solar cells caused by laser scribing and reduces efficiency loss. On the other hand, ferroelectric polarization performs field passivation on the perovskite pin junction, which not only enhances the built-in field of the perovskite material to promote the separation and transport of photogenerated electron-hole pairs, but also intensifies the splitting of the quasi-Fermi level of electrons and holes in the perovskite pin junction, further improving the open-circuit voltage of the cell and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell.

[0096] Example Three

[0097] The third embodiment of the present invention also provides a photovoltaic system, including a perovskite solar cell, an inverter, a battery pack, and a controller as described in the foregoing embodiments.

[0098] In this embodiment, the photovoltaic system operates as follows: perovskite solar cells generate a certain electromotive force under illumination, and these cells are connected in series to form a solar cell array, ensuring that the array voltage meets the system input voltage requirements. The controller charges the battery bank, storing the electrical energy converted from solar energy. The battery bank provides input current to the inverter, which converts DC power into AC power, which is then fed into the distribution cabinet for power supply.

[0099] The photovoltaic system in this embodiment generates electricity through perovskite solar cells. The perovskite solar cells are segmented using a ferroelectric insulating layer instead of the third laser scribing process. This prevents damage to the perovskite solar cells from laser scribing, reducing efficiency loss. Furthermore, ferroelectric polarization passivates the perovskite pin junction, enhancing the built-in field of the perovskite material, promoting the separation and transport of photogenerated electron-hole pairs, and intensifying the splitting of the electron-hole quasi-Fermi levels within the perovskite pin junction. This further increases the open-circuit voltage of the cell, ultimately improving the photoelectric conversion efficiency of the perovskite cell and thus enhancing the power output of the photovoltaic system.

[0100] The perovskite solar cell fabrication method of this invention uses a metal mask to deposit a ferroelectric insulating layer that connects a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal electrode on a transparent conductive film layer, replacing the third laser scribing process to complete the segmentation of the perovskite solar cell. On the one hand, this prevents damage to the perovskite solar cell caused by laser scribing and reduces efficiency loss. On the other hand, ferroelectric polarization performs field passivation on the perovskite pin junction, which enhances the built-in field of the perovskite material, promotes the separation and transport of photogenerated electron-hole pairs, and intensifies the splitting of the electron-hole quasi-Fermi level within the perovskite pin junction, further increasing the open-circuit voltage of the cell and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell.

[0101] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, The method for fabricating the perovskite solar cell includes the following steps: Deposit a transparent conductive film layer on a glass substrate; A first groove for embedding a hole transport layer is formed by cutting the transparent conductive film layer using a laser. A ferroelectric insulating layer is deposited on the transparent conductive film layer, wherein the ferroelectric insulating layer penetrates the hole transport layer, the perovskite light absorption layer, the electron transport layer and the metal electrode; A hole transport layer is deposited on the transparent conductive film layer; A perovskite light-absorbing layer is fabricated on the hole transport layer; An electron transport layer is fabricated on the perovskite light-absorbing layer; A second groove is formed by cutting the electron transport layer with a laser, which penetrates the hole transport layer, the perovskite light absorption layer and the electron transport layer. The first groove, the second groove and the ferroelectric insulating layer are spaced apart. The metal electrode is deposited on the electron transport layer and within the second groove; The perovskite solar cell is positively ferropolarized using an external power source.

2. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The method of applying positive ferroelectric polarization to the perovskite solar cell using an external power source further includes the following steps: A positive ferroelectric polarization perpendicular to the surface of the perovskite solar cell is applied from the metal electrode to the glass substrate using a constant current voltage source; The electric field of the constant current voltage source is greater than that of the ferroelectric coercive field.

3. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The step of depositing a ferroelectric insulating layer on the transparent conductive film layer includes: A metal mask is placed on the transparent conductive film layer; The ferroelectric insulating layer was deposited using magnetron sputtering.

4. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The step of depositing a hole transport layer on the transparent conductive film layer includes: The hole transport layer is deposited on the transparent conductive film layer by magnetron sputtering, and the thickness of the hole transport layer is 80-100 nm.

5. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The step of preparing an electron transport layer on the perovskite light-absorbing layer includes: SnO2 nanoparticles were dissolved in deionized water at a volume ratio of 1:

5. The perovskite light-absorbing layer was coated using a slot-die coating method. An electron transport layer with a thickness of 50-80 nm was prepared by annealing.

6. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The step of depositing a metal electrode on the electron transport layer includes: The metal electrode is deposited on the electron transport layer and in the second groove using a thermal evaporation method, and the thickness of the metal electrode is 50-70 nm.

7. A perovskite solar cell, characterized in that, The perovskite solar cell is fabricated using the method described in any one of claims 1-6, comprising, from bottom to top, the glass substrate, the transparent conductive film layer, the hole transport layer, the perovskite light absorption layer, the electron transport layer, and the metal electrode; The perovskite solar cell further includes the first groove, the second groove, and the ferroelectric insulating layer, which are spaced apart. The ferroelectric insulating layer penetrates the hole transport layer, the perovskite light absorption layer, the electron transport layer, and the metal electrode.

8. The perovskite solar cell according to claim 7, characterized in that, The ferroelectric insulating layer is composed of BaTiO3, PbTiO3, BiFeO3, and Pb(Z) r1-x Ti x It is made from any of the materials in O3.

9. The perovskite solar cell according to claim 7, characterized in that, The first groove is disposed on the transparent conductive film layer and embedded in the hole transport layer, thereby isolating the transparent conductive film layer into multiple mutually insulated sub-units; The second groove extends through the hole transport layer, the perovskite light absorption layer, and the electron transport layer, and is used to embed the metal electrode to achieve series connection between two adjacent perovskite sub-cells.

10. A photovoltaic system, characterized in that, Includes the perovskite solar cell, inverter, battery pack and controller as described in any one of claims 7 to 9.

Images