Light emitting device

Abstract

The application provides a light emitting device, which comprises a plurality of light emitting units and a plurality of solder wire layers, each light emitting unit comprises a first electrode and a second electrode, the first electrode and the second electrode are arranged at intervals, and the first electrode and the second electrode are different in electrical property, the plurality of light emitting units are electrically connected through the plurality of solder wire layers, wherein the interval between two adjacent light emitting units is 0.5-50 μm, and the length of each solder wire layer projected on the light emitting unit is greater than or equal to 150 μm. Thus, the interval between the light emitting units can be effectively reduced under the condition of ensuring the safe solder wire distance, and the light emitting device has high light power density.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element, typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction with light-emitting properties. Under forward bias, electrons are injected from the N-region into the P-region, and holes are injected from the P-region into the N-region. A portion of the minority carriers entering the P-region recombine with the majority carriers to emit light. LEDs have advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources currently available.

[0003] To adapt to the power supplies of applications, high-voltage, low-current drive packaging platforms have emerged. More and more LED products are dividing the original single chip into multiple smaller chips, which are then connected in series to improve the photoelectric characteristics of the LED and better meet the market's demand for high luminous power density. However, using multiple connected chips requires consideration of safe bonding wire spacing (≥150μm) during the packaging process. This prevents the gap between the chips from being minimized, thus hindering the ability to better meet the market's demand for high luminous power density in LED products.

[0004] A complete wire bonding setup includes a first solder joint, a second solder joint, and a wire arc. The safety wire bonding distance is primarily determined by the wire bonding equipment used in the packaging process. Specifically, the ceramic nozzle of the wire bonding device cannot touch the already bonded first solder joint when bonding the second solder joint. The physical dimensions of the ceramic nozzle and the size of the solder joint determine that the distance between the two solder joints cannot approach zero. The safety wire bonding distance should be at least greater than the radius of the ceramic nozzle and the sum of the radii of the two solder joints. Therefore, in practice, the safety wire bonding distance must be ≥150μm.

[0005] Therefore, how to reduce the gap between chips while ensuring a safe wire bonding distance has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] The present invention provides a light-emitting device, which includes multiple light-emitting units and multiple bonding wire layers.

[0007] Each light-emitting unit includes a first electrode and a second electrode, which are spaced apart and have different electrical properties. Multiple bonding layers electrically connect the multiple light-emitting units, wherein the spacing between two adjacent light-emitting units is 0.5 μm to 50 μm, and the length of each bonding layer projected onto the light-emitting unit is greater than or equal to 150 μm.

[0008] In one embodiment, the plurality of light-emitting units are connected in series. Viewed from above the light-emitting device, each light-emitting unit has four sides, which are sequentially defined as a first long side, a first short side, a second long side, and a second short side in a circumferential direction. Specifically, the first horizontal distance from the first electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side, and the second horizontal distance from the second electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side; or, the second horizontal distance from the second electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side, and the first horizontal distance from the first electrode to the first short side is between 1 / 100 and 1 / 10 of the length of the first long side; or, the first horizontal distance from the first electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side, and the second horizontal distance from the second electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side.

[0009] In one embodiment, the plurality of light-emitting units are connected in parallel. Viewed from above the light-emitting device, each light-emitting unit has four sides, which are sequentially defined as a first long side, a first short side, a second long side, and a second short side in a circumferential direction. Specifically, the first horizontal distance from the first electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side; the fourth horizontal distance from the first electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side; the second horizontal distance from the second electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side; the fifth horizontal distance from the second electrode to the first short side is between 1 / 100 and 1 / 10 of the length of the first long side; and the first horizontal distance from the first electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side. 100 to 1 / 10, the fourth horizontal distance from the first electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side, the second horizontal distance from the second electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side, and the fifth horizontal distance from the second electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side; or, the first horizontal distance from the first electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side, the fourth horizontal distance from the first electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side, the second horizontal distance from the second electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side, and the fifth horizontal distance from the second electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side.

[0010] In one embodiment, a third horizontal distance is provided between the first electrode and the second electrode in each of the light-emitting units, the third horizontal distance being between 3 / 10 and 1 / 2 of the length of the first long side.

[0011] In one embodiment, the first vertical distance from the first electrode to the first long side is between 3 / 20 and 3 / 10 of the length of the first short side, and the second vertical distance from the second electrode to the first long side is between 1 / 50 and 1 / 20 of the length of the first short side, wherein the first vertical distance is greater than the second vertical distance; or, the first vertical distance from the first electrode to the first long side is between 1 / 50 and 1 / 20 of the length of the first short side, and the second vertical distance from the second electrode to the first long side is between 3 / 20 and 3 / 10 of the length of the first short side, wherein the first vertical distance is less than the second vertical distance.

[0012] In one embodiment, each of the light-emitting units further includes a substrate having opposing first and second sides, wherein the first electrode and the second electrode are located on the first side of the substrate.

[0013] In one embodiment, each of the light-emitting units further includes an epitaxial structure, a groove, and an insulating layer. The epitaxial structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is closer to the substrate than the first semiconductor layer. The groove extends from the surface of the second semiconductor layer to the light-emitting layer and then to the first semiconductor layer. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The insulating layer covers the groove and the epitaxial structure so that the first electrode and the second electrode are electrically insulated from each other.

[0014] In one embodiment, each of the light-emitting units further includes a first electrical connection layer and a second electrical connection layer. The first electrical connection layer is connected to the first semiconductor layer through the groove, and the second electrical connection layer is connected to the second semiconductor layer. The first electrical connection layer and the second electrical connection layer have exposed areas on the side away from the substrate. The first electrode is disposed on the exposed area of ​​the first electrical connection layer, and the second electrode is disposed on the exposed area of ​​the second electrical connection layer.

[0015] In one embodiment, the light-emitting layer is disposed between the first electrode and the second electrode. That is, the light-emitting layer exists between the first electrode and the second electrode.

[0016] In one embodiment, the bonding wire layer spans the light-emitting layers of two adjacent light-emitting units.

[0017] In one embodiment, the surfaces of the first electrode and the second electrode that are away from the substrate are lower than the surfaces of the epitaxial structure that are away from the substrate.

[0018] In one embodiment, the spacing between two adjacent light-emitting units is less than or equal to 30 μm.

[0019] In one embodiment, when multiple light-emitting units are connected in series, the first electrode and the second electrode connected to the two ends of the bonding layer are staggered.

[0020] In one embodiment, the light-emitting device has a light power density greater than 3 W / mm². 2 .

[0021] The present invention also provides a display device that employs the light-emitting device described in any of the above embodiments.

[0022] One advantage of this invention is that it provides a light-emitting device in which the spacing between light-emitting units can be effectively reduced while ensuring a safe wire bonding distance, resulting in high light power density; it can also reduce the overall size of the light-emitting device, which is beneficial for product use.

[0023] Other features and beneficial effects of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects of the invention and other beneficial effects may be realized and obtained by means of the structures particularly pointed out in the description, claims, etc. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Unless otherwise specified, the positional relationships in the drawings described below are based on the direction in which the components are drawn in the figures.

[0025] Figure 1 This is a cross-sectional structural schematic diagram of a light-emitting device provided in an embodiment of the present invention;

[0026] Figure 2 This is a top view of the structure of a light-emitting device provided in an embodiment of the present invention;

[0027] Figure 3 This is a top view of the light-emitting device provided in another embodiment of the present invention;

[0028] Figure 4 This is a top view of the light-emitting device provided in another embodiment of the present invention;

[0029] Figure 5 This is a top view of the light-emitting device provided in another embodiment of the present invention;

[0030] Figure 6 This is a top view of a light-emitting device disposed on a circuit board according to another embodiment of the present invention.

[0031] Figure label:

[0032] 1, 2, 3, 4, 5 - Light-emitting device; 10 - Light-emitting unit; 12 - Substrate; 121 - First side; 122 - Second side; 21 - First electrode; 22 - Second electrode; 24 - Epitaxial structure; 241 - First semiconductor layer; 242 - Light-emitting layer; 243 - Second semiconductor layer; 26 - Groove; 28 - Insulating layer; 31 - First electrical connection layer; 32 - Second electrical connection layer; 33 - Back electrode; 50 - Bonding layer; 70 - Circuit board; L1 - First long side; B1 - First short side; L2 - Second long side; B2 - Second short side; S1 - Bonding layer length; S2 - Spacing between two adjacent light-emitting units; S3 - Length of the first long side; W1 - First horizontal distance; W2 - Second horizontal distance; W3 - Third horizontal distance; W4 - Fourth horizontal distance; W5 - Fifth horizontal distance; H1 - First vertical distance; H2 - Second vertical distance. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0034] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising."

[0035] Please see Figure 1 and Figure 2 , Figure 1 This is a cross-sectional structural schematic diagram of the light-emitting device 1 provided in an embodiment of the present invention. Figure 2 This is a top view schematic diagram of a light-emitting device 1 provided according to an embodiment of the present invention. To achieve at least one or more of the aforementioned advantages, an embodiment of the present invention provides a light-emitting device 1. As shown in the figure, the light-emitting device 1 includes a plurality of light-emitting units 10 and a plurality of bonding wire layers 50.

[0036] Each light-emitting unit 10 may include a substrate 12, a first electrode 21, and a second electrode 22. The substrate 12 has opposing first sides 121 and second sides 122. Figure 1 The first side 121 corresponds to the upper side, and the second side 122 corresponds to the lower side. Optionally, the substrate 12 is an insulating substrate, for example, the substrate 12 can be a patterned sapphire substrate.

[0037] The first electrode 21 and the second electrode 22 are located on the first side 121 of the substrate 12. The first electrode 21 and the second electrode 22 are spaced apart, meaning that the first electrode 21 and the second electrode 22 do not directly contact each other. The first electrode 21 and the second electrode 22 have different electrical properties; for example, the first electrode 21 and the second electrode 22 may be positive and negative electrodes, or negative and positive electrodes, respectively. The first electrode 21 and the second electrode 22 can be a single-layer, double-layer, or multi-layer structure, and may include metals such as Ti, Al, Ni, Au, and Pt. The second electrode 22 may also be a transparent conductive layer (ITO).

[0038] Multiple wire bonding layers 50 are used to electrically connect multiple light-emitting units 10, such as connecting multiple light-emitting units 10 in series, in parallel, or in a mixed series-parallel connection. In this embodiment, the multiple wire bonding layers 50 connect multiple light-emitting units 10 in series. Specifically, for example... Figure 1 , Figure 2 As shown, one end of the bonding layer 50 is electrically connected to the first electrode 21 of one of the two adjacent light-emitting units 10, and the other end of the bonding layer 50 is electrically connected to the second electrode 22 of the other of the two adjacent light-emitting units 10. The length S1 of each bonding layer 50 projected onto the light-emitting unit 10 is greater than or equal to 150 μm to meet the safety bonding distance requirement; the spacing S2 between two adjacent light-emitting units 10 is 0.5 μm to 50 μm, i.e., 0.5 μm ≤ S2 ≤ 50 μm, to effectively reduce the spacing S2 between two adjacent light-emitting units 10 while ensuring a safety bonding distance, so that the light-emitting device 1 has a high light power density, and the light power density output by the light-emitting device 1 can be greater than 3 W / mm². 2 The preferred value is greater than 4W / mm. 2 5W / mm 2 6W / mm 2 This also reduces the overall size of the light-emitting device 1, which is beneficial for product use. Preferably, the spacing S2 between two adjacent light-emitting units 10 can be less than or equal to 30μm, 25μm, or even 10μm. In other embodiments, the light power density output by the light-emitting device can also be 2W / mm². 2 .

[0039] The length S1 of the bonding layer 50 projected onto the light-emitting unit 10 can be understood as the length of the bonding layer 50 projected onto the horizontal plane where the light-emitting unit 10 is located. Alternatively, it can be understood as the length of the bonding layer 50 projected onto the light-emitting unit 10 when viewed from above the light-emitting device 1. The spacing S2 between two adjacent light-emitting units 10 can be understood as the minimum spacing between two adjacent light-emitting units 10. This is also relevant when viewed from above. Figure 2 As can be seen, the distance between the first short side B1 of the left light-emitting unit 10 and the second short side B2 of the right light-emitting unit 10 is the spacing S2. The optical power density is calculated as follows: optical power density = optical power / LED light-emitting area. The optical power can be measured using a standard optical measurement system, and then the optical power density can be calculated.

[0040] In this embodiment, there are two light-emitting units 10, which are connected in series by a bonding layer 50. Viewed from above the light-emitting device 1 towards the light-emitting unit 10, as shown... Figure 2As shown, each light-emitting unit 10 has four sides. These four sides are defined sequentially in a circumferential direction as a first long side L1, a first short side B1, a second long side L2, and a second short side B2. In this embodiment, the first electrode 21 is closer to the first short side B1 than the second electrode 22, and the second electrode 22 is closer to the second short side B2 than the first electrode 21. By offsetting the first electrode 21 from the outside to the inside, the distance S2 between two adjacent light-emitting units 10 is reduced while ensuring that the safe bonding distance remains unchanged. Specifically, the first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 8 and 1 / 2 of the length S3 of the first long side L1, and the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 100 and 1 / 10 of the length S3 of the first long side L1, thereby reducing the distance S2 between two adjacent light-emitting units 10. Optionally, the first horizontal distance W1 is between 100μm and 200μm to reduce the spacing S2 between two adjacent light-emitting units 10 while ensuring that the safe bonding distance remains unchanged. In particular, when the size of the light-emitting unit 10 is too large, the ratio of the first horizontal distance W1 to the length S3 will become smaller. In this case, setting the first horizontal distance W1 between 100μm and 200μm can effectively reduce the spacing S2 between two adjacent light-emitting units 10.

[0041] In one embodiment, the first electrode 21 and the second electrode 22 in each light-emitting unit 10 have a third horizontal distance W3, which is between 3 / 10 and 1 / 2 of the length S3 of the first long side L1, so as to avoid the first electrode 21 and the second electrode 22 being too close, thereby causing risks such as short circuit.

[0042] In one embodiment, considering that traditional diode structures are highly dependent on electrode positions to ensure excellent electrical and light emission characteristics, it is not easy to change the electrode positions. Therefore, a diode structure with low dependence on electrode positions is provided, which does not need to consider the location of the current injection point to avoid current congestion effects. Figure 1 As shown, the light-emitting unit 10 also includes an epitaxial structure 24, a groove 26, and an insulating layer 28.

[0043] The epitaxial structure 24 includes a first semiconductor layer 241, a light-emitting layer 242, and a second semiconductor layer 243. The light-emitting layer 242 is located between the first semiconductor layer 241 and the second semiconductor layer 243, and the second semiconductor layer 243 is closer to the substrate 12 than the first semiconductor layer 241.

[0044] The first semiconductor layer 241 may be an N-type semiconductor layer, which can provide electrons to the light-emitting layer 242 under the influence of a power source. In some embodiments, the first semiconductor layer 241 includes an N-type doped nitride layer. The N-type doped nitride layer may include one or more N-type impurities of group IV elements. The N-type impurities may include one or a combination of Si, Ge, and Sn.

[0045] The light-emitting layer 242 can be a quantum well (QW) structure. In some embodiments, the light-emitting layer 242 can also be a multiple quantum well (MQW) structure, wherein the multiple quantum well structure includes multiple quantum well layers (Wells) and multiple quantum barrier layers (Barriers) arranged alternately in a repeating manner, such as a GaN / AlGaN, InAlGaN / InAlGaN, or InGaN / AlGaN multi-quantum well structure. Furthermore, the composition and thickness of the well layers within the light-emitting layer 242 determine the wavelength of the generated light. To improve the luminous efficiency of the light-emitting layer 242, this can be achieved by changing the depth of the quantum wells, the number of paired quantum wells and quantum barriers, the thickness, and / or other characteristics within the light-emitting layer 242.

[0046] The second semiconductor layer 243 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 242 under power. In some embodiments, the second semiconductor layer 243 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities of group II elements. The P-type impurities may include one or a combination of Mg, Zn, and Be. The second semiconductor layer 243 can be a single-layer structure or a multilayer structure with different compositions. Furthermore, the arrangement of the epitaxial structure 24 is not limited to the above description, and other types of epitaxial structures 24 can be selected according to actual needs.

[0047] The groove 26 extends from the surface (lower surface) of the second semiconductor layer 243 toward the light-emitting layer 242 and then to the first semiconductor layer 241, exposing a portion of the first semiconductor layer 241 to facilitate the electrical connection of the first electrode 21 to the first semiconductor layer 241. Furthermore, the first electrode 21 is electrically connected to the first semiconductor layer 241, and the second electrode 22 is electrically connected to the second semiconductor layer 243.

[0048] An insulating layer 28 covers the groove 26 and the epitaxial structure 24, thereby electrically insulating the first electrode 21 and the second electrode 22 from each other. Preferably, the insulating layer 28 covers the sidewalls and part of the bottom of the groove 26 and the lower surface of the second semiconductor layer 243. The material of the insulating layer 28 comprises a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silicone. The dielectric material includes electrically insulating materials such as aluminum oxide (AlO), silicon nitride (SiNx), silicon oxide (SiOx), titanium oxide (TiOx), or magnesium fluoride (MgFx). For example, the insulating layer 28 may be a single-layer structure of silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, or barium titanate, or a multilayer structure composed of combinations thereof, such as a Bragg mirror (DBR) formed by repeatedly stacking two materials. That is, the insulating layer 28 may be a DBR reflective insulating layer.

[0049] Each light-emitting unit 10 further includes a first electrical connection layer 31 and a second electrical connection layer 32. The first electrical connection layer 31 and the second electrical connection layer 32 are electrically insulated from each other by an insulating layer 28. The first electrical connection layer 31 is connected to the first semiconductor layer 241 through a groove 26. Preferably, the first electrical connection layer 31 covers the entire surface of the first side 121 of the substrate 12. The second electrical connection layer 32 is connected to the second semiconductor layer 243. Preferably, the second electrical connection layer 32 completely covers the lower surface of the second semiconductor layer 243 (the surface of the second semiconductor layer near the substrate 12) and is disposed on the insulating layer 28. The first electrical connection layer 31 and the second electrical connection layer 32 have exposed areas on the side away from the substrate 12, that is, a portion of the upper surface of the first electrical connection layer 31 is exposed, and a portion of the upper surface of the second electrical connection layer 32 is exposed. A first electrode 21 is disposed on the exposed area of ​​the first electrical connection layer 31, and is electrically connected to the first semiconductor layer 241 through the first electrical connection layer 31. The second electrode 22 is disposed on the exposed area of ​​the second electrical connection layer 32. It is electrically connected to the second semiconductor layer 243 through the second electrical connection layer 32.

[0050] Specifically, since the second electrode 22 is electrically connected to the second semiconductor layer 243 via the almost entirely surface-mounted second electrical connection layer 32 beneath the epitaxial structure 24, placing the second electrode 22 anywhere on the second electrical connection layer 32 has almost the same effect (the second electrode 22 conducts current via the entire surface-mounted second electrical connection layer 32); similarly, the first electrode 21 is also electrically connected to the first semiconductor layer 241 via the almost entirely surface-mounted first electrical connection layer 31 below, so placing the first electrode 21 anywhere on the first electrical connection layer 31 has almost the same effect (the first electrode 21 conducts current via the entire surface-mounted first electrical connection layer 31). The exposed areas of the first electrical connection layer 31 and the second electrical connection layer 32 can be adaptively adjusted.

[0051] The light-emitting layer 242 is disposed between the first electrode 21 and the second electrode 22, that is, there is a light-emitting layer 242 between the first electrode 21 and the second electrode 22. Figure 2 The shaded area represents the region where the light-emitting layer 242 is located. In other words, a light-emitting layer 242 exists between the first electrode 21 and the second electrode 22 in their lateral directions. Preferably, a light-emitting layer 242 exists around both the first electrode 21 and the second electrode 22 to effectively reduce the spacing S2 between two adjacent light-emitting units 10. The bonding layer 50 crosses the light-emitting layers 242 of two adjacent light-emitting units 10. The surfaces of the first electrode 21 and the second electrode 22 that are away from the substrate 12 are lower than the surface of the epitaxial structure 24 that is away from the substrate 12, i.e. Figure 1 The upper surfaces of the first electrode 21 and the second electrode 22 are lower than the upper surface of the epitaxial structure 24. The first electrode 21 and the second electrode 22 are distributed inside the epitaxial structure 24 to improve the electrical characteristics of the light-emitting device 1 and facilitate the layout and use of the bonding layer 50.

[0052] The light-emitting unit 10 may also include a back electrode 33. The back electrode 33 is disposed on the second side 122 surface of the substrate 12 for subsequent die bonding, which is beneficial for the subsequent mounting of the light-emitting device 1 on the circuit board.

[0053] Please see Figure 3 , Figure 3 This is a top view schematic diagram of the light-emitting device 2 provided in another embodiment of the present invention. To achieve at least one or more of the aforementioned advantages, another embodiment of the present invention provides a light-emitting device 2. As shown in the figure, the light-emitting device 2 of this embodiment, compared to... Figure 1 , Figure 2 The main difference in the light-emitting device 1 shown is that the distance S2 between two adjacent light-emitting units 10 is reduced by shifting the second electrode 22 inward. The other similarities will not be elaborated further. Specifically, the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 8 and 1 / 2 of the length S3 of the first long side L1. At this time, the first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 100 and 1 / 10 of the length S3 of the first long side L1. Optionally, the second horizontal distance W2 is between 100 μm and 200 μm to reduce the distance S2 between two adjacent light-emitting units 10 while maintaining a constant safe bonding distance. Especially when the size of the light-emitting unit 10 is too large, the ratio of the second horizontal distance W2 to the length S3 becomes smaller. In this case, setting the second horizontal distance W2 between 100 μm and 200 μm can effectively reduce the distance S2 between two adjacent light-emitting units 10.

[0054] Please see Figure 4 , Figure 4This is a top view schematic diagram of the light-emitting device 3 provided in another embodiment of the present invention. To achieve at least one or more of the aforementioned advantages, another embodiment of the present invention provides a light-emitting device 3. As shown in the figure, the light-emitting device 3 of this embodiment, compared to... Figure 1 , Figure 2 The main difference in the light-emitting device 1 shown is that the distance S2 between two adjacent light-emitting units 10 is reduced by simultaneously shifting the first electrode 21 and the second electrode 22 inward. The other similarities will not be described in detail. Specifically, the first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1, and the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1.

[0055] Please see Figure 5 , Figure 5 This is a top view schematic diagram of the light-emitting device 4 provided in another embodiment of the present invention. To achieve at least one or more of the aforementioned advantages, another embodiment of the present invention provides a light-emitting device 4. As shown in the figure, the light-emitting device 4 of this embodiment, compared to... Figure 1 , Figure 2 The main difference in the light-emitting device 1 shown is (the similarities will not be elaborated further): the electrodes connected to both ends of the wire bonding layer 50 are staggered. The diagram shows the series connection, where the first electrode 21 and the second electrode 22 connected to both ends of the wire bonding layer 50 are staggered. From a top-down view, the first electrode 21 and the second electrode 22 are no longer on the same horizontal line, but are vertically staggered, making the wire bonding layer 50 appear tilted (from a top-down view). Optionally, the first vertical distance H1 from the first electrode 21 to the first long side L1 is between 3 / 20 and 3 / 10 of the length of the first short side B1, and the second vertical distance H2 from the second electrode 22 to the first long side L1 is between 1 / 50 and 1 / 20 of the length of the first short side B1. Furthermore, the first vertical distance H1 is greater than the second vertical distance H2. Optionally, the first vertical distance H1 from the first electrode 21 to the first long side L1 is between 1 / 50 and 1 / 20 of the length of the first short side B1, and the second vertical distance H2 from the second electrode 22 to the first long side L1 is between 3 / 20 and 3 / 10 of the length of the first short side B1, and the second vertical distance H2 is greater than the first vertical distance H1. This arrangement allows for a further reduction in the spacing S2 between two adjacent light-emitting units 10 while ensuring a safe bonding distance. Other similar aspects will not be described in detail. Similarly, the distance can be changed... Figure 3 , Figure 4The positions of the first electrode 21 and the second electrode 22 connected to the bonding layer 50 are staggered, so that the bonding layer 50 is arranged in an inclined manner, thereby further reducing the spacing S2 between two adjacent light-emitting units 10.

[0056] Please see Figure 6 , Figure 6 This is a top view of a light-emitting device 5 disposed on a circuit board 70 according to another embodiment of the present invention. To achieve at least one or more of the aforementioned advantages, another embodiment of the present invention provides a light-emitting device 5. As shown in the figure, the light-emitting device 5 of this embodiment, compared to… Figure 1 , Figure 2 The main difference in the light-emitting device 1 shown is that (the same parts will not be described in detail): the multiple light-emitting units 10 in this embodiment are connected in parallel. The first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 8 and 1 / 2 of the length S3 of the first long side L1. The fifth horizontal distance W5 from the second electrode 22 to the first short side B1 is also between 1 / 8 and 1 / 2 of the length S3 of the first long side L1. At this time, the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 100 and 1 / 10 of the length S3 of the first long side L1. The fourth horizontal distance W4 from the first electrode 21 to the second short side B2 is also between 1 / 100 and 1 / 10 of the length S3 of the first long side L1, thereby reducing the spacing S2 between two adjacent light-emitting units 10.

[0057] Similarly, it can be seen that when... Figure 3 , Figure 4 , Figure 5When the series-type light-emitting device shown is replaced with a parallel-type light-emitting device, the relationships between the various distances will be adjusted accordingly. For example: the first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 100 and 1 / 10 of the length S3 of the first long side L1; the fourth horizontal distance W4 from the first electrode 21 to the second short side B2 is between 1 / 8 and 1 / 2 of the length S3 of the first long side L1; the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 100 and 1 / 10 of the length S3 of the first long side L1; and the fifth horizontal distance W5 from the second electrode 22 to the first short side B1 is between 1 / 8 and 1 / 2 of the length S3 of the first long side L1. Alternatively, the first horizontal distance W1 from the first electrode 21 to the first short side B1 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1; the fourth horizontal distance W4 from the first electrode 21 to the second short side B2 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1; the second horizontal distance W2 from the second electrode 22 to the second short side B2 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1; and the fifth horizontal distance W5 from the second electrode 22 to the first short side B1 is between 1 / 16 and 1 / 8 of the length S3 of the first long side L1.

[0058] In addition, the light-emitting device 5 is disposed on the circuit board 70, and the light-emitting device 5 is electrically connected to the positive and negative terminals on the circuit board 70.

[0059] It should be further noted that the first horizontal distance W1, the second horizontal distance W2, the third horizontal distance W3, the fourth horizontal distance W4, the fifth horizontal distance W5, the first vertical distance H1, and the second vertical distance H2 all refer to the minimum distances from a top-down perspective. Figure 2 For example, the first horizontal distance W1 is the minimum distance from the first electrode 21 to the first short side B1, which is the vertical distance from the right end point of the first electrode 21 to the first short side B1 in the example.

[0060] The wire bonding layer 50 can electrically connect multiple light-emitting units 10 by means of film deposition or wire bonding. The wire bonding layer 50 can be a transparent wire bonding layer or a metallic wire bonding layer. In practice, transparent wire bonding layers are easier to form, so they can make the spacing S2 between two adjacent light-emitting units 10 smaller, such as less than or equal to 5 μm.

[0061] An embodiment of the present invention also provides a display device, which includes the light-emitting devices 1, 2, 3, 4, and 5 described in any of the above embodiments, and the specific structure and technical effects of which will not be repeated here.

[0062] In summary, the present invention provides a light-emitting device 1, 2, 3, 4, 5, which, by setting the first electrode 21 and / or the second electrode 22 biased towards the center of the light-emitting unit 10, can effectively reduce the spacing between the light-emitting units 10 while ensuring a safe wire bonding distance, so that the light-emitting devices 1, 2, 3, 4, 5 have high light power density; it can also reduce the overall size of the light-emitting devices 1, 2, 3, 4, 5, which is beneficial to product use.

[0063] Furthermore, the range of values ​​for "~" in the above-mentioned term includes the values ​​of both endpoints themselves, all of which fall within the scope of protection of this invention. Those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of this invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting device, characterized in that: The light-emitting device includes: Multiple light-emitting units, each light-emitting unit including a first electrode and a second electrode, the first electrode and the second electrode being arranged at intervals, and the first electrode and the second electrode having different electrical properties; Multiple bonding layers electrically connect the multiple light-emitting units; The spacing between two adjacent light-emitting units is 0.5μm to 50μm, and the length of each bonding layer projected onto the light-emitting unit is greater than or equal to 150μm. Each of the light-emitting units further includes a substrate, the substrate having a first side and a second side opposite to each other, the first electrode and the second electrode being located on the first side of the substrate; Each of the light-emitting units further includes an epitaxial structure, a groove, and an insulating layer. The epitaxial structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is closer to the substrate than the first semiconductor layer. The groove extends from the surface of the second semiconductor layer to the light-emitting layer and then to the first semiconductor layer. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The insulating layer covers the groove and the epitaxial structure so that the first electrode and the second electrode are electrically insulated from each other. Each of the light-emitting units further includes a first electrical connection layer and a second electrical connection layer. The first electrical connection layer is connected to the first semiconductor layer through the groove, and the second electrical connection layer is connected to the second semiconductor layer. The first electrical connection layer and the second electrical connection layer have exposed areas on the side away from the substrate. The first electrode is disposed on the exposed area of ​​the first electrical connection layer, and the second electrode is disposed on the exposed area of ​​the second electrical connection layer. The plurality of light-emitting units are connected in series. When viewed from above the light-emitting device, each light-emitting unit has four sides, which are defined sequentially as a first long side, a first short side, a second long side, and a second short side in a circumferential direction. Wherein, the first horizontal distance from the first electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side, and the second horizontal distance from the second electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side; Alternatively, the second horizontal distance from the second electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side, and the first horizontal distance from the first electrode to the first short side is between 1 / 100 and 1 / 10 of the length of the first long side; Alternatively, the first horizontal distance from the first electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side, and the second horizontal distance from the second electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side.

2. The light-emitting device according to claim 1, characterized in that: The first vertical distance from the first electrode to the first long side is between 3 / 20 and 3 / 10 of the length of the first short side, and the second vertical distance from the second electrode to the first long side is between 1 / 50 and 1 / 20 of the length of the first short side. The first vertical distance is greater than the second vertical distance. Alternatively, the first vertical distance from the first electrode to the first long side is between 1 / 50 and 1 / 20 of the length of the first short side, the second vertical distance from the second electrode to the first long side is between 3 / 20 and 3 / 10 of the length of the first short side, and the first vertical distance is less than the second vertical distance.

3. The light-emitting device according to claim 1, characterized in that: Each of the light-emitting units has a third horizontal distance between the first electrode and the second electrode, which is between 3 / 10 and 1 / 2 of the length of the first long side.

4. The light-emitting device according to claim 1, characterized in that: The light-emitting layer is disposed between the first electrode and the second electrode.

5. The light-emitting device according to claim 1, characterized in that: The bonding wire layer spans the light-emitting layers of two adjacent light-emitting units.

6. The light-emitting device according to claim 1, characterized in that: The surfaces of the first electrode and the second electrode that are away from the substrate are lower than the surfaces of the epitaxial structure that are away from the substrate.

7. The light-emitting device according to claim 1, characterized in that: The spacing between two adjacent light-emitting units is less than or equal to 30 μm.

8. The light-emitting device according to claim 1, characterized in that: The light-emitting device has a light power density greater than 3W / mm². 2 .

9. A light-emitting device, characterized in that: The light-emitting device includes: Multiple light-emitting units, each light-emitting unit including a first electrode and a second electrode, the first electrode and the second electrode being arranged at intervals, and the first electrode and the second electrode having different electrical properties; Multiple bonding layers electrically connect the multiple light-emitting units; The spacing between two adjacent light-emitting units is 0.5μm to 50μm, and the length of each bonding layer projected onto the light-emitting unit is greater than or equal to 150μm. Each of the light-emitting units further includes a substrate, the substrate having a first side and a second side opposite to each other, the first electrode and the second electrode being located on the first side of the substrate; Each of the light-emitting units further includes an epitaxial structure, a groove, and an insulating layer. The epitaxial structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is closer to the substrate than the first semiconductor layer. The groove extends from the surface of the second semiconductor layer to the light-emitting layer and then to the first semiconductor layer. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The insulating layer covers the groove and the epitaxial structure so that the first electrode and the second electrode are electrically insulated from each other. Each of the light-emitting units further includes a first electrical connection layer and a second electrical connection layer. The first electrical connection layer is connected to the first semiconductor layer through the groove, and the second electrical connection layer is connected to the second semiconductor layer. The first electrical connection layer and the second electrical connection layer have exposed areas on the side away from the substrate. The first electrode is disposed on the exposed area of ​​the first electrical connection layer, and the second electrode is disposed on the exposed area of ​​the second electrical connection layer. The plurality of light-emitting units are connected in parallel. When viewed from above the light-emitting device, each light-emitting unit has four sides, which are defined sequentially as a first long side, a first short side, a second long side, and a second short side in a circumferential direction. Wherein, the first horizontal distance from the first electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side, the fourth horizontal distance from the first electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side, the second horizontal distance from the second electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side, and the fifth horizontal distance from the second electrode to the first short side is between 1 / 100 and 1 / 10 of the length of the first long side; Alternatively, the first horizontal distance from the first electrode to the first short side is between 1 / 100 and 1 / 10 of the length of the first long side, the fourth horizontal distance from the first electrode to the second short side is between 1 / 8 and 1 / 2 of the length of the first long side, the second horizontal distance from the second electrode to the second short side is between 1 / 100 and 1 / 10 of the length of the first long side, and the fifth horizontal distance from the second electrode to the first short side is between 1 / 8 and 1 / 2 of the length of the first long side; Alternatively, the first horizontal distance from the first electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side, the fourth horizontal distance from the first electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side, the second horizontal distance from the second electrode to the second short side is between 1 / 16 and 1 / 8 of the length of the first long side, and the fifth horizontal distance from the second electrode to the first short side is between 1 / 16 and 1 / 8 of the length of the first long side.

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