一种开关管自动测试的方法及测试平台
By simulating dynamic high-voltage environments for testing before the switching transistors leave the factory, the problem of failure of switching transistors such as gallium nitride MOSFETs under dynamic high voltage is solved, enabling early detection and elimination of potential faults and improving product reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHUJI NITROGEN SILICON TECH CO
- Filing Date
- 2022-03-30
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, only routine FT testing is performed on switching transistors before they leave the factory, which has led to the failure of some switching transistors such as gallium nitride MOSFETs under dynamic high voltage environments.
Before the switching transistor leaves the factory, it is tested by simulating a dynamic high-voltage environment using a test circuit to detect whether the switching transistor has failed. This includes using a preset high-voltage power supply and current cut-off protection circuit to determine the operating status of the switching transistor under dynamic high voltage.
It effectively detects switching transistors that may fail under dynamic high-voltage conditions, preventing them from malfunctioning in actual use and improving product quality and reliability.
Smart Images
Figure CN114720839B_ABST