Detection device and display device

Abstract

The purpose of this embodiment is to provide a detection device and a display device that can suppress the reduction of reliability. The detection device (1) of this embodiment comprises: a substrate (21); a photoelectric conversion element (30) disposed on the substrate (21) and including a semiconductor layer (31-33); a transistor (Mrst) disposed corresponding to the photoelectric conversion element (30); a supporting substrate (SS); and a green color filter (CF) supported on the supporting substrate (SS), wherein the color filter (CF) overlaps the photoelectric conversion element (30).

Description

Technical Field

[0001] Embodiments of the present invention relate to a detection device and a display device. Background Art

[0002] The optical detection device includes, for example, a PIN photodiode as a photoelectric conversion element. As an example of a technique for providing such a photoelectric conversion element on a substrate, a technique for providing a light shielding layer between a substrate and a semiconductor layer to reduce the influence of noise light is known.

[0003] In recent years, such optical detection devices have been used as biometric sensors for detecting biometric information, such as fingerprint sensors and vein sensors. In detection devices mounted on electronic devices that can be used outdoors, such as portable terminals, it is important to suppress malfunctions caused by the influence of sunlight.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2013-12696. Summary of the invention

[0007] Problems to be solved by the invention

[0008] An object of the present embodiment is to provide a detection device and a display device capable of suppressing a decrease in reliability.

[0009] Technical solutions to solve problems

[0010] The detection device of this embodiment comprises: a substrate; a photoelectric conversion element arranged on the substrate and including a semiconductor layer; a transistor arranged corresponding to the photoelectric conversion element; a supporting substrate; and a green color filter supported by the supporting substrate, wherein the color filter overlaps the photoelectric conversion element.

[0011] The display device of this embodiment comprises: a detection device; a display panel, which is arranged on the detection device; and a cover component, which is arranged on the display panel, the cover component has an upper surface, and the display panel is configured to emit green illumination light toward the upper surface. The detection device comprises: a substrate; a photoelectric conversion element, which is arranged on the substrate and includes a semiconductor layer; a transistor, which is arranged corresponding to the photoelectric conversion element; a supporting substrate, which is arranged between the photoelectric conversion element and the display panel; and a green color filter, which is supported by the supporting substrate, and the color filter overlaps with the photoelectric conversion element. The detection device is configured to detect reflected light from a biological body in contact with the upper surface via the cover component, the display panel and the color filter.

[0012] Effects of the Invention

[0013] According to the present embodiment, a detection device and a display device capable of suppressing a decrease in reliability can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a cross-sectional view showing a configuration example of a display device DSP including the detection device 1 according to the present embodiment.

[0015] Figure 2 It is shown Figure 1 A diagram showing a configuration example of the detection device 1 shown.

[0016] Figure 3 is a circuit diagram showing the detection element 3 .

[0017] Figure 4 It is a plan view showing a configuration example of the detection element 3 .

[0018] Figure 5 It is along Figure 4 Cross-sectional view of line AB.

[0019] Figure 6 This is a diagram showing an example of spectral characteristics of the color filter CF that can be applied in this embodiment.

[0020] Figure 7 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0021] Figure 8 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0022] Fig. 9 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0023] Fig.10 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0024] Fig.11 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0025] Fig.12 It is a plan view showing another configuration example of the detection element 3 .

[0026] Fig.13 It is a cross-sectional view showing another configuration example of the detection element 3 .

[0027] Fig.14 It is a cross-sectional view showing another configuration example of the detection element 3 . DETAILED DESCRIPTION

[0028] Hereinafter, the present embodiment will be described with reference to the accompanying drawings. In addition, the disclosure is only an example, and the content that can be easily thought of by those skilled in the art for appropriate changes that maintain the main purpose of the invention is of course also included in the scope of the present invention. In addition, the drawings sometimes schematically represent the width, thickness, shape, etc. of each part compared with the actual form in order to make the description clearer, but it is only an example and does not limit the interpretation of the present invention. In addition, in this specification and each of the accompanying drawings, with respect to the figures that have appeared, the same reference symbols are sometimes marked for the constituent elements that perform the same or similar functions as the above-mentioned structures, and repeated detailed descriptions are appropriately omitted.

[0029] Figure 1 1 is a cross-sectional view showing a configuration example of a display device DSP including the detection device 1 of the present embodiment. The display device DSP includes the detection device 1, an optical layer OL, a display panel PNL, and a cover member CV. Figure 1 In the configuration example shown, the detection device 1 and the optical layer OL are bonded by the bonding layer AD1, the optical layer OL and the display panel PNL are bonded by the bonding layer AD2, and the display panel PNL and the cover component CV are bonded by the bonding layer AD3. The bonding layers AD1 to AD3 are transparent. It should be noted that the bonding layers AD1 to AD3 can also be omitted.

[0030] The optical layer OL is provided on the detection device 1. The optical layer OL is a lens layer for refracting light toward the detection device 1 to improve the incident efficiency to the detection device 1, and includes a collimator, etc. It should be noted that the optical layer OL may be omitted.

[0031] The display panel PNL is arranged on the detection device 1 and the optical layer OL. It should be noted that the detection device 1 can be arranged in a manner overlapping the entire surface of the display panel PNL, or in a manner overlapping a portion of the display panel PNL. The display panel PNL is a display panel having self-luminous display elements DL such as organic electroluminescent (EL) elements, micro LEDs, mini LEDs, etc. In addition, the display panel PNL can also be a display panel having display elements DL such as liquid crystal elements and electrophoretic elements. In the display panel PNL, gaps DS that allow light to pass are provided between the plurality of display elements DL. As the display elements DL, for example, light-emitting elements that emit red light, green light, and blue light, respectively, are used.

[0032] The cover member CV is provided on the display panel PNL. The cover member CV is, for example, a glass substrate or a resin substrate. The cover member CV has an upper surface CVA with which an object such as a living body comes into contact. Figure 1 The illustrated configuration example shows a state in which a finger F is in contact with the upper surface CVA.

[0033] The display panel PNL is configured to emit illumination light L1 of a predetermined color toward the upper surface CVA. For example, by lighting a light-emitting element that emits light (green light) of a wavelength of 500 nm to 550 nm in the display element DL provided in the display panel PNL, the green illumination light L1 is emitted toward the upper surface CVA. It should be noted that the color of the illumination light L1 is not limited to green, and may also be other colors such as blue, blue-green, etc.

[0034] The detection device 1 includes a detection element 3, and is configured to detect light via a cover member CV, a display panel PNL, and an optical layer OL. The detection element 3 is arranged in a manner opposite to the gap DS of the display element DL. For example, the reflected light reflected by the finger F in the illumination light L1 passes through the gap DS between the display elements DL, is collimated in the optical layer OL, and is then detected by the detection device 1. The details of the detection device 1 will be described later, but the detection device 1 is, for example, a light reflection type biosensor, and by detecting the reflected light reflected by the finger F, it is possible to detect the unevenness of the surface of the finger F (for example, a fingerprint). In addition to detecting fingerprints, the detection device 1 can also detect information related to the organism by detecting the reflected light reflected inside the finger F. Information related to the organism is, for example, a blood vessel image such as a vein, or a pulse, a pulse wave, and the like.

[0035] However, when such a display device DSP is used outdoors, it is necessary to consider the influence of the light L2 of the wavelength that is transmitted through the living body among the wavelengths contained in the sunlight. It is known that living bodies can easily transmit light in the wavelength range of 600nm to 1100nm. On the other hand, the photoelectric conversion element possessed by the detection element 3 can detect light in the wavelength range of approximately 400nm to 800nm, and has a peak sensitivity near 550nm to 600nm. However, the photoelectric conversion element can hardly detect light with a wavelength above 750nm, especially light in the wavelength range of above 800nm ​​(zero sensitivity). In this way, if the wavelength of light that can easily transmit the living body and the wavelength of light detected by the detection device 1 are considered, the light L2 in the wavelength range of 600nm to 750nm can transmit the living body and become noise light in the detection device 1. Such noise light may cause malfunction in the detection device 1, which becomes a cause of reduced reliability.

[0036] Therefore, in the present embodiment, the detection device 1 includes a support substrate SS provided between the detection element 3 and the display panel PNL, and a color filter CF supported by the support substrate SS. These structures will be described later.

[0037] Figure 2 It is shown Figure 11 is a diagram showing a configuration example of a detection device 1. The detection device 1 includes a substrate 21, a sensor unit 10, a scanning line driving circuit 11, a signal line selection circuit 12, and a detection circuit 13. The detection circuit 13 is provided on a wiring substrate 14 electrically connected to the substrate 21, for example, but may also be provided on the substrate 21.

[0038] The sensor unit 10 includes a plurality of detection elements 3. The plurality of detection elements 3 are arranged in a matrix in a first direction X and a second direction Y. The detection element 3 is a light sensor having a photoelectric conversion element 30. The photoelectric conversion element 30 is a photodiode that outputs an electrical signal corresponding to the irradiated light. More specifically, the photoelectric conversion element 30 is a PIN (Positive Intrinsic Negative) photodiode. The photoelectric conversion element 30 performs detection based on a gate drive signal (e.g., a reset control signal RST, a readout control signal RD) supplied from a scanning line drive circuit 11. The photoelectric conversion element 30 outputs the electrical signal corresponding to the irradiated light as a detection signal Vdet to a signal line selection circuit 12. The detection device 1 detects information related to a biological body based on the detection signal Vdet from the plurality of photoelectric conversion elements 30.

[0039] It should be noted that, in this specification, the first direction X and the second direction Y are directions parallel to the substrate 21. The first direction X and the second direction Y may be orthogonal to each other, or may intersect at an angle other than 90 degrees. In addition, the third direction Z is a direction orthogonal to the first direction X and the second direction Y, and is the normal direction of the substrate 21.

[0040] Figure 3 : is a circuit diagram showing the detection element 3. The detection element 3 includes a photoelectric conversion element 30, a first transistor (reset transistor) Mrst, a second transistor (read transistor) Mrd, and a third transistor (source follower transistor) Msf. In addition, the detection element 3 is provided with a first scanning line (reset control scanning line) GLrst and a second scanning line (read control scanning line) GLrd as a detection drive line (scanning line), and a first signal line (output signal line) SL is provided as a wiring for signal reading. The first scanning line GLrst and the second scanning line GLrd are connected to Figure 2 The first scanning line GLrst is a wiring to which a reset control signal RST is supplied, and the second scanning line GLrd is a wiring to which a read control signal RD is supplied. Figure 2 The signal line selection circuit 12 is connected to the signal line selection circuit 12 shown. The signal line selection circuit 12 is, for example, a multiplexer. The signal line selection circuit 12 connects the selected first signal line SL to the detection circuit 13. Thus, the signal line selection circuit 12 outputs the detection signal Vdet of the photoelectric conversion element 30 to the detection circuit 13.

[0041] It should be noted that in Figure 3 , one detection element 3 is shown, but the first scanning line GLrst, the second scanning line GLrd, and the first signal line SL are connected to a plurality of detection elements 3. Specifically, the first scanning line GLrst and the second scanning line GLrd are connected in Figure 2 The first signal line SL extends in the first direction X shown in FIG. Figure 2 It extends in the second direction Y shown and is connected to a plurality of detection elements 3 arranged in the second direction Y.

[0042] The first transistor Mrst, the second transistor Mrd and the third transistor Msf are provided corresponding to one photoelectric conversion element 30. In one example, the plurality of transistors of the detection element 3 are each composed of an n-type TFT (thin film transistor), but the present invention is not limited thereto, and each transistor may also be composed of a p-type TFT.

[0043] A reference potential VCOM is applied to the anode of the photoelectric conversion element 30. The cathode of the photoelectric conversion element 30 is connected to the node N1. The node N1 is connected to the capacitor Cs, one of the source electrode and the drain electrode of the first transistor Mrst, and the gate electrode of the third transistor Msf. In addition, a parasitic capacitor Cp exists at the node N1. When light is irradiated to the photoelectric conversion element 30, the signal (charge) output from the photoelectric conversion element 30 is accumulated in the capacitor Cs.

[0044] The gate electrode of the first transistor Mrst is connected to the first scan line GLrst. The reset potential Vrst is provided to the other of the source electrode and the drain electrode of the first transistor Mrst. When the first transistor Mrst is turned on (on state) in response to the reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photoelectric conversion element 30 is reverse biased and driven.

[0045] The third transistor Msf is connected between a terminal supplied with a power supply potential VDD and the second transistor Mrd (node ​​N2). The gate electrode of the third transistor Msf is connected to the node N1. The signal (charge) generated by the photoelectric conversion element 30 is supplied to the gate electrode of the third transistor Msf. Thus, the third transistor Msf outputs a signal voltage corresponding to the signal (charge) generated by the photoelectric conversion element 30 to the second transistor Mrd.

[0046] The second transistor Mrd is connected between the source electrode (node ​​N2) of the third transistor Msf and the first signal line SL (node ​​N3). The gate electrode of the second transistor Mrd is connected to the second scan line GLrd. When the second transistor Mrd is turned on in response to the read control signal RD, a signal voltage corresponding to the signal (charge) output from the third transistor Msf, that is, the signal generated by the photoelectric conversion element 30, is output as a detection signal Vdet to the first signal line SL.

[0047] It should be noted that in Figure 3 In the example shown, the first transistor Mrst and the second transistor Mrd are respectively a so-called dual-gate structure formed by connecting two transistors in series. However, this example is not limited thereto, and the first transistor Mrst and the second transistor Mrd may be a single-gate structure, or three or more transistors may be connected in series. In addition, the circuit of a detection element 3 is not limited to a structure having three transistors, namely, the first transistor Mrst, the second transistor Mrd, and the third transistor Msf. The detection element 3 may have two transistors, or may have four or more transistors.

[0048] Figure 4 1 is a top view showing an example of the structure of the detection element 3. As surrounded by a single-dot chain line, a detection element 3 has two scanning lines (a first scanning line GLrst and a second scanning line GLrd), four signal lines (a first signal line SL, a second signal line (power signal line) SLsf, a third signal line (reset signal line) SLrst, and a fourth signal line (reference signal line) SLcom) in addition to the photoelectric conversion element 30. The first scanning line GLrst and the second scanning line GLrd extend in the first direction X, respectively, and are arranged in the second direction Y. The second signal line SLsf, the first signal line SL, the third signal line SLrst, and the fourth signal line SLcom extend in the second direction Y, respectively, and are arranged in sequence in the first direction X. The second signal line SLsf is a signal line of the power supply potential VDD, the third signal line SLrst is a signal line of the reset potential Vrst, and the fourth signal line SLcom is a signal line of the reference potential VCOM.

[0049] The photoelectric conversion element 30 is arranged in an area surrounded by two scanning lines (a first scanning line GLrst and a second scanning line GLrd) and two signal lines (a third signal line SLrst and a fourth signal line SLcom). The photoelectric conversion element 30 includes a semiconductor layer having a photovoltaic effect. Specifically, the semiconductor layer of the photoelectric conversion element 30 includes an i-type semiconductor layer 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 33. The i-type semiconductor layer 31 and the n-type semiconductor layer 32 are formed of, for example, amorphous silicon (a-Si), and the p-type semiconductor layer 33 is formed of, for example, polycrystalline silicon. It should be noted that the material of the semiconductor layer is not limited thereto, and amorphous silicon can be replaced by polycrystalline silicon, microcrystalline silicon, etc., and polycrystalline silicon can also be replaced by amorphous silicon, microcrystalline silicon, etc. The n-type semiconductor layer 32 is doped with impurities in amorphous silicon to form an n+ region. The p-type semiconductor layer 33 is doped with impurities in polycrystalline silicon to form a p+ region. The i-type semiconductor layer 31 is, for example, an undoped intrinsic semiconductor and has lower conductivity than the n-type semiconductor layer 32 and the p-type semiconductor layer 33. The p-type semiconductor layer 33 is electrically connected to the fourth signal line SLcom via the contact hole H11. Thus, the reference potential VCOM is supplied to the p-type semiconductor layer 33 of the photoelectric conversion element 30 via the fourth signal line SLcom.

[0050] The lower electrode 35 is provided in a region overlapping with the semiconductor layer of the photoelectric conversion element 30. The lower electrode 35 is electrically connected to the fourth signal line SLcom via the contact hole H12. Thus, the lower electrode 35 is supplied with the same reference potential VCOM as the p-type semiconductor layer 33, and the parasitic capacitance between the lower electrode 35 and the p-type semiconductor layer 33 can be suppressed.

[0051] The first transistor Mrst, the third transistor Msf, and the second transistor Mrd are arranged between the first signal line SL and the second signal line SLsf in the second direction Y. In addition, these three transistors and one photoelectric conversion element 30 are adjacent in the first direction X via the first signal line SL and the third signal line SLrst.

[0052] The first transistor Mrst includes a semiconductor layer 61. One end of the semiconductor layer 61 is electrically connected to the third signal line SLrst. The other end of the semiconductor layer 61 is electrically connected to the connection electrode CN. The portion of the third signal line SLrst connected to the semiconductor layer 61 functions as a source electrode, and the portion of the connection electrode CN connected to the semiconductor layer 61 functions as a drain electrode. The semiconductor layer 61 intersects the first scan line GLrst. The portion of the first scan line GLrst overlapping the semiconductor layer 61 functions as a gate electrode.

[0053] The third transistor Msf includes a semiconductor layer 65. One end of the semiconductor layer 65 is electrically connected to the second signal line SLsf. The other end of the semiconductor layer 65 is electrically connected to the node N2. The portion of the second signal line SLsf connected to the semiconductor layer 65 functions as a drain electrode, and the portion of the node N2 connected to the semiconductor layer 65 functions as a source electrode. One end of the gate line GLsf is electrically connected to the connection electrode CN. The other end of the gate line GLsf has two branches arranged in the second direction Y. The semiconductor layer 65 intersects with the gate line GLsf branched into two. The portion of the gate line GLsf overlapping the semiconductor layer 65 functions as a gate electrode. That is, the first transistor Mrst is electrically connected to the gate electrode of the third transistor Msf via the connection electrode CN and the gate line GLsf.

[0054] The second transistor Mrd includes a semiconductor layer 71. Figure 4 In the illustrated configuration example, the semiconductor layer 71 is formed integrally with the semiconductor layer 65, but may be separated from the semiconductor layer 65. One end of the semiconductor layer 71 is electrically connected to the node N2. The other end of the semiconductor layer 71 is electrically connected to the first signal line SL. The portion of the node N2 connected to the semiconductor layer 71 functions as a drain electrode, and the portion of the first signal line SL connected to the semiconductor layer 71 functions as a source electrode. The second scanning line GLrd has two branched portions arranged in the second direction Y. The semiconductor layer 71 intersects with the two branched portions of the second scanning line GLrd. The portion of the second scanning line GLrd overlapping with the semiconductor layer 71 functions as a gate electrode. In such a configuration, the second transistor Mrd and the third transistor Msf are electrically connected to the first signal line SL.

[0055] The upper electrode 34 provided on the photoelectric conversion element 30 is a transparent electrode and is electrically connected to the n-type semiconductor layer 32. The connection wiring 34a formed integrally with the upper electrode 34 is electrically connected to the connection electrode CN. In other words, the cathode (n-type semiconductor layer 32) of the photoelectric conversion element 30 is electrically connected to the first transistor Mrst and the third transistor Msf via the upper electrode 34 and the connection electrode CN.

[0056] It should be noted that Figure 4 The planar configuration of the photoelectric conversion element 30 and each transistor shown is only an example and can be changed appropriately. For example, it is not limited to the configuration in which a plurality of transistors are arranged in the second direction Y, and some transistors may be arranged adjacent to other transistors in the first direction X and be arranged at different positions.

[0057] Figure 5 It is along Figure 4 It should be noted that in Figure 5, the cross-sectional structure of the first transistor Mrst among the three transistors included in the detection element 3 is shown, but the cross-sectional structures of the second transistor Mrd and the third transistor Msf are also the same as the first transistor Mrst. The first transistor Mrst shown here is a bottom-gate structure in which the gate electrode is arranged on the lower side of the semiconductor layer, but it may also be a top-gate structure in which the gate electrode is arranged on the upper side of the semiconductor layer, or it may be a double-gate structure in which the gate electrodes are arranged on the upper and lower sides of the semiconductor layer.

[0058] The substrate 21 is an insulating substrate such as a glass substrate or a resin substrate. The first scanning line GLrst including a portion functioning as a gate electrode and the gate line GLsf are provided on the substrate 21 and covered with an insulating film 22. The insulating film 23 is provided on the insulating film 22.

[0059] The semiconductor layer 61 is disposed on the insulating film 23 and is covered by the insulating film 24. The insulating film 25 is disposed on the insulating film 24. The semiconductor layer 61 is, for example, polycrystalline silicon, but may also be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, a low-temperature polycrystalline silicon, or the like. The semiconductor layer 61 has a channel region 61a, high-concentration impurity regions 61b, 61c, and low-concentration impurity regions 61d, 61e. The channel region 61a is, for example, an undoped intrinsic semiconductor or a low-impurity region, and has a lower conductivity than the high-concentration impurity regions 61b, 61c and the low-concentration impurity regions 61d, 61e. The channel region 61a corresponds to a region in the semiconductor layer 61 that overlaps with the first scanning line GLrst. The low-concentration impurity regions 61d, 62e are disposed between the channel region 61a and the high-concentration impurity regions 61b, 61c, respectively.

[0060] The third signal line SLrst and the connection electrode CN are disposed on the insulating film 25 and covered by the insulating film 26. Figure 4 As shown in FIG. 1 , in the region overlapping with the semiconductor layer 61, the first signal line SL is provided between the third signal line SLrst and the connection electrode CN, but in FIG. Figure 5 The illustration of the first signal line SL is omitted.

[0061] The third signal line SLrst contacts the high-concentration impurity region 61b of the semiconductor layer 61 in the contact hole H1 that passes through the insulating films 24 and 25. The connection electrode CN contacts the high-concentration impurity region 61c of the semiconductor layer 61 in the contact hole H2 that passes through the insulating films 24 and 25. In addition, the connection electrode CN contacts the gate line GLsf in the contact hole H3 that passes through the insulating films 22 to 25.

[0062] The insulating films 22 to 26 are inorganic insulating films, and are formed of, for example, silicon oxide, silicon nitride, or the like.

[0063] The semiconductor layer 65 of the third transistor Msf is provided on the insulating film 23 and covered by the insulating film 24, similarly to the semiconductor layer 61. The second signal line SLsf is provided on the insulating film 25 and covered by the insulating film 26, similarly to the third signal line SLrst and the connection electrode CN. The second signal line SLsf contacts the semiconductor layer 65 in the contact hole H4 penetrating the insulating films 24 and 25.

[0064] The lower electrode 35 is provided on the substrate 21 and is covered by the insulating film 22. The lower electrode 35 is formed of an opaque metal material which is the same material as the first scanning line GLrst and the gate line GLsf. The photoelectric conversion element 30 is provided on the insulating film 23 and overlaps with the lower electrode 35. The lower electrode 35 functions as a light shielding layer to suppress the light that has passed through the substrate 21 from entering the photoelectric conversion element 30.

[0065] The i-type semiconductor layer 31 is provided between the p-type semiconductor layer 33 and the n-type semiconductor layer 32. In the present embodiment, the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 are sequentially stacked on the insulating film 23. It should be noted that the n-type semiconductor layer 32, the i-type semiconductor layer 31, and the p-type semiconductor layer 33 may also be stacked in this order on the insulating film 23.

[0066] Specifically, the p-type semiconductor layer 33 is provided on the insulating film 23 and covered by the insulating films 24 to 26 in the same manner as the semiconductor layers 61 and 65. The insulating films 24 and 25 have an opening OP11 penetrating to the p-type semiconductor layer 33 at a position overlapping with the p-type semiconductor layer 33. The insulating film 26 covers a plurality of transistors including the first transistor Mrst and is provided on the insulating film 25. The insulating film 26 covers the insulating film 24 constituting the inner wall of the opening OP11 and the side surface of the insulating film 25. In addition, the insulating film 26 has an opening OP12 penetrating to the p-type semiconductor layer 33 at a position overlapping with the p-type semiconductor layer 33. The i-type semiconductor layer 31 is provided on the insulating film 26 and is in contact with the p-type semiconductor layer 33 at the opening OP12. The n-type semiconductor layer 32 is provided on the i-type semiconductor layer 31 and is in contact with the i-type semiconductor layer 31.

[0067] The insulating film 27 is provided on the insulating film 26. In addition, the insulating film 27 covers the photoelectric conversion element 30. That is, the insulating film 27 covers the i-type semiconductor layer 31 and the n-type semiconductor layer 32. In addition, the insulating film 27 has an opening OP2 that penetrates to the n-type semiconductor layer 32. This insulating film 27 is a transparent organic insulating film, for example, formed of an organic material such as acrylic resin. The insulating film 27 is thicker than the insulating film 26.

[0068] The upper electrode 34 is provided on the insulating film 27 and is covered by the insulating film 28. The upper electrode 34 is a transparent electrode formed of a transparent conductive material such as indium tin oxide. The upper electrode 34 is provided along the surface of the insulating film 27 and contacts the n-type semiconductor layer 32 at the opening OP2 provided in the insulating film 27. In addition, the connection wiring 34a extending from the upper electrode 34 contacts the connection electrode CN in the contact hole H5 provided in the insulating film 27 and is electrically connected to the gate line GLsf.

[0069] The insulating film 28 covers the upper electrode 34 and is provided on the insulating film 27. The insulating film 29 is provided on the insulating film 28. The insulating film 28 is a transparent inorganic insulating film. The insulating film 28 is provided as a protective layer for suppressing the intrusion of moisture into the photoelectric conversion element 30. The insulating film 29 is a transparent organic insulating film. The insulating film 29 is formed to flatten the surface of the detection element 3.

[0070] The support substrate SS is a transparent insulating substrate such as a glass substrate or a resin substrate. The support substrate SS is provided to overlap the photoelectric conversion element 30 and the first transistor Mrst. The support substrate SS has an inner surface SSA facing the photoelectric conversion element 30 and an outer surface SSB on the opposite side to the inner surface SSA. Figure 1 The optical layers OL (or display panels PNL) are shown opposite.

[0071] The green color filter CF is provided on the inner surface SSA of the support substrate SS. This color filter CF is provided at least on the photoelectric conversion element 30. In addition, the color filter CF overlaps with the openings OP11, OP12, and OP2. Figure 5 In the illustrated configuration example, the color filter CF is provided not only on the photoelectric conversion element 30 but also on the first transistor Mrst, overlapping the entire detection element 3. Furthermore, the color filter CF is provided over the entire detection element 3. Figure 2 The plurality of detection elements 3 shown are provided so as to overlap substantially the entire sensor portion 10 .

[0072] The overcoat layer OC covers the color filter CF. The overcoat layer OC is a transparent organic insulating film. That is, the color filter CF is located between the support substrate SS and the overcoat layer OC.

[0073] The spacer SP is provided between the insulating film 29 and the overcoat layer OC. In one example, the spacer SP is fixed to the overcoat layer OC, and on the other hand, is not fixed to the insulating film 29 but contacts the insulating film 29. The position where the spacer SP contacts is preferably a position different from the photoelectric conversion element 30 or the opening OP2. In the region overlapping the photoelectric conversion element 30 and the first transistor Mrst, an air layer AR exists between the insulating film 29 and the overcoat layer OC.

[0074] Figure 6 : This is a diagram showing an example of the spectral characteristics of the color filter CF that can be used in the present embodiment. The horizontal axis is the wavelength (nm), and the vertical axis is the standardized transmittance (%). Here, three color filters CF with different film thicknesses are prepared, and the respective spectral characteristics are measured. It should be noted that any color filter is formed of the same material. A in the figure represents the spectral characteristics of the color filter CF with a film thickness of 1.5μm. B in the figure represents the spectral characteristics of the color filter CF with a film thickness of 2.0μm. C in the figure represents the spectral characteristics of the color filter CF with a film thickness of 2.5μm.

[0075] It was confirmed that in any color filter CF, a transmittance of 60% or more was obtained in the wavelength range of 500 nm to 580 nm, and a transmittance of 80% or more was obtained in the wavelength range of approximately 520 nm to 550 nm.

[0076] In addition, it can be confirmed that in any color filter CF having a film thickness of 1.5 μm or more, the transmittance is 20% or less in the wavelength range of 600 nm to 750 nm or less. In particular, it is confirmed that the transmittance tends to decrease as the film thickness of the color filter CF increases. For a color filter CF having a film thickness of 2.0 μm or more, the transmittance is 10% or less in the wavelength range of 600 nm to 750 nm or less. In addition, for a color filter CF having a film thickness of 2.5 μm or more, the transmittance is 20% or less in the wavelength range of 600 nm to 800 nm or less, and the transmittance is 10% or less in the wavelength range of 600 nm to 750 nm or less.

[0077] Thus, the green color filter CF has high transmittance for the light L1 of a wavelength detected by the photoelectric conversion element 30 , and has high light shielding property for the light L2 of a wavelength that can pass through a living body and become noise light.

[0078] If the film thickness of the color filter CF is 3 μm or more, the transmittance to the light L2 is substantially zero, but the transmittance to the light L1 may decrease. Therefore, the film thickness of the color filter CF is preferably 3 μm or less.

[0079] According to the present embodiment, the color filter CF is disposed between the photoelectric conversion element 30 and the display panel PNL, so as to transmit the green reflected light reflected by the biological body and shield the external light that has passed through the biological body. Thus, malfunctions in the detection device 1 caused by external light are suppressed. Therefore, the reduction in reliability can be suppressed.

[0080] In addition, the color filter CF is formed on a supporting substrate SS different from the substrate 21 on which various transistors such as the first transistor Mrst and the photoelectric conversion element 30 are provided. In other words, the color filter CF is manufactured by a manufacturing process different from that of the photoelectric conversion element 30 and the like. Therefore, contamination of the production line for manufacturing the photoelectric conversion element 30 and the like is suppressed. In addition, even if the color filter CF contains impurities that adversely affect the performance of the photoelectric conversion element 30 and the transistor, the impurities can be suppressed from invading the photoelectric conversion element 30 and the transistor.

[0081] In addition, an air layer AR exists between the photoelectric conversion element 30, the transistor, and the color filter CF, so that the movement of impurities, the conduction of heat from the display panel PNL, and the conduction of an electric field are suppressed.

[0082] As a comparative example, when an IR cut filter is provided between the optical layer OL and the display panel PNL instead of the color filter CF, a general IR cut filter has a thickness of several hundred micrometers and an additional adhesive layer for bonding the IR cut filter is required.

[0083] According to this embodiment, by using a support substrate SS thinner than the IR cut filter and adding a color filter CF with a thickness of several μm, it is possible to obtain a light shielding performance equivalent to that of the IR cut filter, and further, it is possible to omit an adhesive layer for bonding the IR cut filter. Therefore, the total thickness of the display device DSP can be reduced compared to the comparative example.

[0084] Figure 7 It is a cross-sectional view showing another configuration example of the detection element 3 . Figure 7 The configuration example shown is Figure 5 Compared with the configuration example shown in FIG. 1 , the difference is that the outer coating OC is omitted. The spacer SP is provided between the insulating film 29 and the color filter CF. The spacer SP is fixed to the color filter CF, but on the other hand, it is not fixed to the insulating film 29, but is in contact with the insulating film 29. In the region overlapping with the photoelectric conversion element 30 and the first transistor Mrst, there is an air layer AR between the insulating film 29 and the color filter CF.

[0085] In this configuration example, the same effects as those of the above configuration example can be obtained. In addition, since the overcoat layer is omitted, the total thickness of the display device DSP can be reduced by an amount corresponding to the film thickness of the overcoat layer (several μm).

[0086] Figure 8 It is a cross-sectional view showing another configuration example of the detection element 3 . Figure 8 The configuration example shown is Figure 7 The difference from the illustrated configuration example is that the spacer SP is omitted. That is, the color filter CF is in contact with the insulating film 29.

[0087] In this configuration example, the same effect as in the above configuration example can be obtained. In addition, since the spacer is omitted, the thickness of the display device DSP can be reduced by the film thickness (several μm) of the spacer. Figure 5 In the illustrated configuration example, the spacer SP is omitted. In this case, the overcoat layer OC is in contact with the insulating film 29 .

[0088] Fig. 9 It is a cross-sectional view showing another configuration example of the detection element 3 . Fig. 9 The configuration example shown is Figure 5 Compared with the configuration example shown in FIG. 1 , the difference is that the insulating film 29 is omitted. The spacer SP is provided between the insulating film 28, which is an inorganic insulating film, and the overcoat layer OC. The spacer SP is fixed to the overcoat layer OC, but is not fixed to the insulating film 28, but is in contact with the insulating film 28. In the region overlapping with the photoelectric conversion element 30 and the first transistor Mrst, an air layer AR exists between the insulating film 28 and the overcoat layer OC. In particular, the thickness T11 of the air layer AR in the region overlapping with the photoelectric conversion element 30 is greater than the thickness T12 of the air layer AR in the region overlapping with the first transistor Mrst.

[0089] In this configuration example, the same effects as those of the above configuration example can be obtained. In addition, since the insulating film 29 as an organic insulating film is omitted, the total thickness of the display device DSP can be reduced by the thickness of the insulating film 29 (several μm).

[0090] Fig.10 It is a cross-sectional view showing another configuration example of the detection element 3 . Fig.10 The configuration example shown is Fig. 9 Compared with the configuration example shown in FIG. 1 , the difference is that the outer coating OC is omitted. The spacer SP is provided between the insulating film 28 and the color filter CF. The spacer SP is fixed to the color filter CF, but on the other hand, it is not fixed to the insulating film 28 but is in contact with the insulating film 28. In the region overlapping with the photoelectric conversion element 30 and the first transistor Mrst, there is an air layer AR between the insulating film 28 and the color filter CF.

[0091] In this configuration example, the same effects as those of the above configuration example can be obtained. In addition, since the overcoat layer is omitted, the total thickness of the display device DSP can be reduced by an amount corresponding to the film thickness of the overcoat layer (several μm).

[0092] Fig.11 It is a cross-sectional view showing another configuration example of the detection element 3 . Fig.11 The configuration example shown is Fig.10Compared with the configuration example shown in FIG. 1 , the spacer SP is omitted. That is, the color filter CF is in contact with the insulating film 28 in the region overlapping with the first transistor Mrst. In the region overlapping with the photoelectric conversion element 30, an air layer AR exists between the insulating film 28 and the color filter CF.

[0093] In this configuration example, the same effect as in the above configuration example can be obtained. In addition, since the spacer is omitted, the total thickness of the display device DSP can be reduced by the thickness of the spacer (several μm). Fig. 9 In the illustrated configuration example, the spacer SP is omitted. In this case, the overcoat layer OC is in contact with the insulating film 28 .

[0094] Fig.12 It is a plan view showing another configuration example of the detection element 3 . Fig.12 The configuration example shown is Figure 5 Compared with the configuration example shown in FIG. 1 , the difference is that the color filter CF is provided in a region overlapping with the photoelectric conversion element 30, and on the other hand, is not provided in a region overlapping with the first transistor Mrst. Fig.12 In the configuration example shown, the color filter CF is provided in an area surrounded by the first scanning line GLrst, the second scanning line GLrd, the third signal line SLrst, and the fourth signal line SLcom. In addition, the color filter CF overlaps the entire photoelectric conversion element 30, and also overlaps the third signal line SLrst and the fourth signal line SLcom. In addition, the color filter CF does not overlap not only the first transistor Mrst, but also does not overlap any of the second transistor Mrd and the third transistor Msf.

[0095] Fig.13 It is a cross-sectional view showing another configuration example of the detection element 3 . Fig.13 Equivalent to along Fig.12 The color filter CF is formed in an island shape on the inner surface SSA of the support substrate SS and overlaps the photoelectric conversion element 30. The overcoat layer OC covers the color filter CF in a region overlapping with the photoelectric conversion element 30 and contacts with the inner surface SSA of the support substrate SS in a region overlapping with the first transistor Mrst.

[0096] In such a configuration example, the same effects as those of the above-mentioned configuration example can be obtained.

[0097] Fig.14 It is a cross-sectional view showing another configuration example of the detection element 3 . Fig.14 The configuration example shown is Fig.13 The difference from the illustrated configuration example is that the spacer SP is omitted. That is, the overcoat layer OC is in contact with the insulating film 29 .

[0098] In such a configuration example, the same effects as those of the above configuration example can be obtained. In addition, since the spacer is omitted, the total thickness of the display device DSP can be reduced by an amount corresponding to the film thickness of the spacer (several μm).

[0099] The plurality of configuration examples described above can be combined as appropriate.

[0100] In the present embodiment described above, for example, the insulating film 28 corresponds to the inorganic insulating film, and the insulating film 29 corresponds to the organic insulating film. The insulating films 24 to 26 correspond to the first insulating film, and the insulating film 27 corresponds to the second insulating film. The openings OP11 and OP12 correspond to the first opening, and the opening OP2 corresponds to the second opening.

[0101] As described above, according to the present embodiment, a detection device and a display device capable of suppressing a decrease in reliability can be provided.

[0102] It should be noted that, although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0103] Explanation of symbols

[0104] DSP, display device; 1, detection device; PNL, display panel; 21, substrate; 30, photoelectric conversion element; 31, i-type semiconductor layer; 32, n-type semiconductor layer; 33, p-type semiconductor layer; CF, (green) color filter; SS, supporting substrate; OC, outer coating; Mrst, Msf, Mrd, transistor.

Claims

1. A detection device, comprising: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; support base plate; A green color filter supported on the supporting substrate; An organic insulating film, disposed on the photoelectric conversion element and the transistor; an outer coating covering the color filter; as well as a spacer disposed between the organic insulating film and the outer coating layer, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the organic insulating film and the overcoat layer.

2. A detection device comprising: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; support base plate; A green color filter supported on the supporting substrate; An organic insulating film, disposed on the photoelectric conversion element and the transistor; as well as a spacer disposed between the organic insulating film and the color filter, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the organic insulating film and the color filter.

3. A detection device comprising: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; support base plate; A green color filter supported on the supporting substrate; An inorganic insulating film, disposed on the photoelectric conversion element and the transistor; an outer coating covering the color filter; as well as a spacer disposed between the inorganic insulating film and the outer coating layer, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the inorganic insulating film and the overcoat layer.

4. A detection device comprising: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; support base plate; A green color filter supported on the supporting substrate; An inorganic insulating film, disposed on the photoelectric conversion element and the transistor; as well as a spacer disposed between the inorganic insulating film and the color filter, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the inorganic insulating film and the color filter.

5. The detection device according to any one of claims 1 to 4, wherein: The color filter has a transmittance of 20% or less in a wavelength range of 600 nm to 750 nm or less.

6. The detection device according to claim 5, wherein: The color filter has a film thickness of 1.5 μm or more.

7. The detection device according to any one of claims 1 to 4, wherein: The color filter overlaps the transistor.

8. The detection device according to claim 1 or 3, wherein: The support substrate is in contact with the overcoat layer in a region overlapping with the transistor.

9. The detection device according to claim 8, wherein: The color filter is provided in a region surrounded by two scanning lines and two signal lines in a plan view.

10. The detection device according to any one of claims 1 to 4, further comprising: a first insulating film covering the transistor; and a second insulating film disposed on the first insulating film, The semiconductor layer of the photoelectric conversion element has: A p-type semiconductor layer is disposed on the substrate, and the p-type semiconductor layer is covered by the first insulating film; An i-type semiconductor layer is in contact with the p-type semiconductor layer at a first opening provided in the first insulating film; as well as An n-type semiconductor layer is disposed on the i-type semiconductor layer, The second insulating film is an organic insulating film, covers the i-type semiconductor layer and the n-type semiconductor layer, and has a second opening penetrating to the n-type semiconductor layer. The color filter overlaps with the second opening.

11. The detection device according to claim 10, wherein: The p-type semiconductor layer is formed of polycrystalline silicon, The i-type semiconductor layer and the n-type semiconductor layer are formed of amorphous silicon. 12 . The detection device according to claim 11 , further comprising a transparent electrode electrically connecting the n-type semiconductor layer and the transistor.

13. A display device comprising: Detection device; A display panel is disposed on the detection device; and A cover component is disposed on the display panel, and the cover component has an upper surface. The display panel is configured to emit green illumination light toward the upper surface. The detection device comprises: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A supporting substrate, disposed between the photoelectric conversion element and the display panel; A green color filter is supported on the support substrate, An organic insulating film, disposed on the photoelectric conversion element and the transistor; an outer coating covering the color filter; as well as a spacer disposed between the organic insulating film and the outer coating layer, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the organic insulating film and the overcoat layer. The detection device is configured to detect reflected light from a living body in contact with the upper surface via the cover member, the display panel, and the color filter.

14. A display device comprising: Detection device; A display panel is disposed on the detection device; and A cover component is disposed on the display panel, and the cover component has an upper surface. The display panel is configured to emit green illumination light toward the upper surface. The detection device comprises: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A supporting substrate, disposed between the photoelectric conversion element and the display panel; A green color filter is supported on the support substrate, an organic insulating film disposed on the photoelectric conversion element and the transistor; and a spacer disposed between the organic insulating film and the color filter, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the organic insulating film and the color filter. The detection device is configured to detect reflected light from a living body in contact with the upper surface via the cover member, the display panel, and the color filter.

15. A display device comprising: Detection device; A display panel is disposed on the detection device; and A cover component is disposed on the display panel, and the cover component has an upper surface. The display panel is configured to emit green illumination light toward the upper surface. The detection device comprises: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A supporting substrate, disposed between the photoelectric conversion element and the display panel; A green color filter is supported on the support substrate, An inorganic insulating film, disposed on the photoelectric conversion element and the transistor; an outer coating covering the color filter; as well as a spacer disposed between the inorganic insulating film and the outer coating layer, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the inorganic insulating film and the overcoat layer. The detection device is configured to detect reflected light from a living body in contact with the upper surface via the cover member, the display panel, and the color filter.

16. A display device comprising: Detection device; A display panel is disposed on the detection device; and A cover component is disposed on the display panel, and the cover component has an upper surface. The display panel is configured to emit green illumination light toward the upper surface. The detection device comprises: substrate; A photoelectric conversion element is disposed on the substrate and comprises a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A supporting substrate, disposed between the photoelectric conversion element and the display panel; A green color filter is supported on the support substrate, an inorganic insulating film disposed on the photoelectric conversion element and the transistor; and a spacer disposed between the inorganic insulating film and the color filter, The color filter overlaps with the photoelectric conversion element, In a region overlapping with the photoelectric conversion element, an air layer exists between the inorganic insulating film and the color filter. The detection device is configured to detect reflected light from a living body in contact with the upper surface via the cover member, the display panel, and the color filter.

17. The display device according to any one of claims 13 to 16, wherein: The display panel includes a plurality of self-luminous display elements that emit the illumination light. The detection device is arranged to face the gap of the display element.

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