Etching method and etching apparatus

CN114746985BActive Publication Date: 2025-10-17TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202080084270.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-12-09
Filing Date
2020-10-28
Publication Date
2025-10-17
Estimated Expiration
2040-10-28

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Abstract

The etching method includes the steps of: placing a substrate having at least a molybdenum film or a tungsten film and a silicon-containing substance with the molybdenum film or the tungsten film exposed in a chamber; supplying an oxidizing gas and a hexafluoride gas as an etching gas into the chamber to selectively etch the molybdenum film or the tungsten film with respect to the silicon-containing substance.
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Citation Information

Patent Citations

  • Etching method and system, and computer readable recording medium

    JP2007250570A

  • Manufacture of semiconductor device

    JP1991093223A

  • Etching reactants and plasma-free oxide etching methods using same

    JP2019502253A