Display device and method for manufacturing a display device

Abstract

A display device and a method for manufacturing a display device are provided. The display device includes a substrate including a pixel, a light emitting diode disposed on the pixel, an insulating layer covering the light emitting diode, a light collecting structure surrounding at least a portion of the insulating layer and having a side surface forming an inverted conical shape, and a reflective layer disposed on the side surface of the light collecting structure.

Description

Technical Field

[0001] This disclosure relates to display devices and methods of manufacturing the same, and more specifically, to display devices using light-emitting diodes (LEDs) and methods of manufacturing the same. Background Technology

[0002] Currently, with the advent of the full information age, the field of display devices that express electrical information signals visually has developed rapidly, and continuous research is being conducted to improve the performance of various display devices, such as thinness, light weight, and low power consumption.

[0003] Among various display devices, light-emitting displays are self-emissive, eliminating the need for a separate light source, unlike liquid crystal displays. Therefore, light-emitting displays can be manufactured to be lightweight and thin. Furthermore, because light-emitting displays are driven by low voltage, they offer advantages not only in terms of power consumption but also in color reproduction, response speed, viewing angle, and contrast ratio (CR). Therefore, they hold promise for applications in various fields. Summary of the Invention

[0004] Technical issues

[0005] As a light-emitting display device, a light-emitting display device is currently in use, which is manufactured by transferring ultra-small light-emitting diodes (LEDs) onto a thin-film transistor array substrate. Furthermore, LEDs are a light-emitting element of interest because they have a fast turn-on speed, low power consumption, and excellent stability due to high shock resistance, and can display images with high brightness. However, due to light leakage to the periphery of the LED, there are limitations in achieving images with high brightness.

[0006] For example, light emitted from an LED is guided through an organic layer or substrate located near the LED, resulting in loss to the outside of the display device. Even though the LED itself is a device that emits high-brightness light, its luminous efficiency deteriorates due to external factors, requiring higher current and increasing power consumption. For outdoor products primarily used to achieve high-brightness images, heat generation is even more severe, shortening the LED's lifespan.

[0007] Therefore, the inventors of this disclosure have invented a light-emitting display device with a novel structure to solve the problems of deteriorated luminous efficiency and shortened lifespan of LED display devices. Specifically, a display device and a method for manufacturing the display device have been invented, which form a structure around the LED to reflect LED light in order to improve luminous efficiency.

[0008] One objective of this disclosure is to provide a display device that improves luminous efficiency without increasing the current applied to the LED.

[0009] Another objective of this disclosure is to provide a display device that achieves high brightness while improving lifespan.

[0010] Furthermore, another objective of this disclosure is to provide a display device that collects light emitted or reflected from the side surface of an LED onto the upper part of the LED.

[0011] The purpose of this disclosure is not limited to the above-mentioned purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0012] Technical solution

[0013] To address the aforementioned problems, a display device according to one aspect of this disclosure includes: a substrate comprising pixels; light-emitting diodes disposed in the pixels; an insulating layer covering the light-emitting diodes; a light-collecting structure surrounding at least a portion of the insulating layer; and a reflective layer disposed on a side surface of the light-collecting structure, wherein the side surface of the light-collecting structure has an inverted conical shape.

[0014] Furthermore, a method for manufacturing a display device according to one aspect of this disclosure includes: disposing a light-emitting diode on a substrate on which pixel circuitry is formed; forming a first insulating layer on the light-emitting diode; forming a second insulating layer on the light-emitting diode and the first insulating layer; forming a metal material layer on the second insulating layer; and forming a reflective layer by etching at least a portion of the metal material layer, wherein the reflective layer is formed on a side surface of the second insulating layer and forms an acute angle with the normal of the substrate.

[0015] Further details of exemplary embodiments are included in the detailed description and accompanying drawings.

[0016] Beneficial effects

[0017] According to this disclosure, the light collection structure is disposed in the periphery of the light-emitting diode to minimize light leakage to the periphery of the light-emitting diode.

[0018] Furthermore, according to this disclosure, the light collection structure is formed with an inverted cone shape to improve light collection efficiency.

[0019] Furthermore, this disclosure provides an optimal structure that can improve luminous efficiency even by changing the type of light-emitting diode or the design of the peripheral circuit of the light-emitting diode.

[0020] Furthermore, according to this disclosure, the light-collecting structure and the side-reflecting layer are formed to have the same height in order to improve the luminous efficiency of the display device.

[0021] The effects of this disclosure are not limited to those illustrated above, and this specification includes many more effects. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure.

[0023] Figure 2 This is a schematic perspective view of a display device according to an exemplary embodiment of the present disclosure.

[0024] Figure 3 This is a plan view of a display device according to an exemplary embodiment of the present disclosure.

[0025] Figure 4 This is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.

[0026] Figure 5 This is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.

[0027] Figure 6 This is an enlarged cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.

[0028] Figure 7 This is a table showing experimental results of various exemplary and comparative embodiments of this disclosure.

[0029] Figures 8a to 8e This is a schematic process diagram illustrating a method for manufacturing a display device according to an exemplary embodiment of the present disclosure.

[0030] Figures 9a to 9e This is a schematic process diagram illustrating a method of manufacturing a display device according to another exemplary embodiment of the present disclosure. Detailed Implementation

[0031] The advantages and features of this disclosure, as well as the methods for achieving these advantages and features, will become clear from the exemplary embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. These exemplary embodiments are provided by way of example only to enable those skilled in the art to fully understand the disclosure and scope of this disclosure. Therefore, this disclosure will be limited only by the scope of the appended claims.

[0032] The shapes, dimensions, scales, angles, quantities, etc., illustrated in the accompanying drawings used to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, similar reference numerals generally denote similar elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0033] Even if not explicitly stated, components are interpreted as including the normal error range.

[0034] When using terms such as “above,” “over,” “below,” or “next to” to describe the positional relationship between two parts, one or more parts may be located between the two parts, unless these terms are used with the terms “immediately” or “directly.”

[0035] When an element or layer is placed "on" another element or layer, the other layer or element can be directly inserted on or between the other element.

[0036] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from others. Therefore, the first component mentioned below can be a second component in the technical concept of this disclosure.

[0037] Throughout the specification, similar reference numerals generally denote similar elements.

[0038] The dimensions and thicknesses of each component shown in the accompanying drawings are illustrative for ease of description, and this disclosure is not limited to the dimensions and thicknesses of the components shown.

[0039] Features of the various embodiments of this disclosure may be partially or wholly bonded or combined with each other, and may be technically interlocked and operated in various ways, and the embodiments may be performed independently or in association with each other.

[0040] In the following, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0041] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. Figure 2 This is a schematic perspective view of a display device according to an exemplary embodiment of the present disclosure. (Refer to...) Figure 1 The light-emitting display device 100 includes a substrate 111, a gating driver GC, a data driver DC, and a timing controller TC.

[0042] Display panel 110 is a panel for displaying images. Display panel 110 may include various circuits, wiring, and light-emitting diodes (LEDs) disposed on substrate 111. Display panel 110 is divided by multiple intersecting data lines DL and multiple intersecting gate lines GL, and may include multiple unit pixels P connected to the multiple data lines DL and multiple intersecting gate lines GL. Display panel 110 may include a display area defined by the multiple unit pixels P and a non-display area in which various signal lines or pads are formed. Display panel 110 may include light-emitting diodes (LEDs) as light-emitting elements, and as light-emitting diodes (LEDs), those with 100 Miniature light-emitting diodes with a size of m or smaller.

[0043] The timing controller TC receives timing signals such as vertical synchronization signals, horizontal synchronization signals, data enable signals, or point clocks via a receiver circuit connected to the host system, such as an LVDS or TMDS interface. Based on the input timing signals, the timing controller TC generates timing control signals to control the data driver DC and the strobe driver GC.

[0044] A data driver DC is connected to multiple data lines DL of the display panel 110 and provides a data voltage Vdata to multiple unit pixels P. The data driver DC may include multiple source driver ICs (integrated circuits). These source driver ICs may be provided with a source timing control signal DDC from a timing controller TC and digital video data RGB. In response to the source timing control signal DDC, the multiple source driver ICs convert the digital video data RGB into a gamma voltage to generate the data voltage Vdata, which is then provided through the multiple data lines DL of the display panel 110. The multiple source driver ICs can be connected to the multiple data lines DL of the display panel 110 via a chip-on-glass (COG) process or a tape-on-board (TAB) process. Furthermore, the multiple source driver ICs may be formed on the display panel 110 or on a separate PCB substrate for connection to the display panel 110.

[0045] The gating driver GC is connected to multiple gating lines GL of the display panel 110 and provides gating signals to multiple unit pixels P. The gating driver GC may include a level shifter and a shift register. The level shifter shifts the level of the clock signal CLK, which is input from the timing controller TC at a transistor-transistor-logic (TTL) level, and then provides the clock signal CLK to the shift register. The shift register may be formed in the non-display area of ​​the display panel 110 in a GIP manner, but is not limited thereto. The shift register consists of multiple stages that shift and output gating signals in response to the clock signal CLK and the drive signal. The multiple stages included in the shift register may sequentially output gating signals through multiple output terminals.

[0046] Reference Figure 2 Light-emitting diodes 140 are disposed in each pixel P of the display device 100 according to an exemplary embodiment of the present disclosure. Pixel P is an individual unit that emits light and may include a plurality of light-emitting diodes and a plurality of pixel circuits that individually drive the plurality of light-emitting diodes.

[0047] The light-emitting diode 140 includes a first light-emitting diode 140A and a second light-emitting diode 140B. The first light-emitting diode 140A and the second light-emitting diode 140B are arranged in a row in the pixels P of the display panel 110, and the first light-emitting diode 140A and the second light-emitting diode 140B are adjacent to each other.

[0048] The first light-emitting diode 140A is disposed in the first row of pixel P. The first light-emitting diode 140A is composed of elements that emit light of different colors. For example, the first light-emitting diode 140A includes a first red light-emitting diode 140AR, a first green light-emitting diode 140AG, and a first blue light-emitting diode 140AB.

[0049] The second light-emitting diode 140B is disposed in the second row of pixel P. The second light-emitting diode 140B is composed of elements that emit light of the same color as the first light-emitting diode 140A. For example, the second light-emitting diode 140B includes a second red light-emitting diode 140BR, a second green light-emitting diode 140BG, and a second blue light-emitting diode 140BB. However, this is not limited to this, and the first light-emitting diode 140A and the second light-emitting diode 140B may also include white light-emitting diodes that realize white sub-pixels. Furthermore, the type and number of light-emitting diodes constituting the first light-emitting diode 140A and the second light-emitting diode 140B can be configured in various ways according to exemplary embodiments. In this specification, when two light-emitting diodes emit light of the same color, it means that the light-emitting diodes are manufactured with the same design to emit light of the same color. For example, when the materials and stacked structures constituting the light-emitting diodes are the same, it can be defined that the two light-emitting diodes emit light of the same color. In this case, even if the color of the light emitted by the light-emitting diode changes due to manufacturing deviations or long service time, if it is determined that they were designed to emit light of the same color during initial manufacturing, it can be defined that the two light-emitting diodes emit light of the same color. (Refer to...) Figure 2 The exemplary embodiments of this disclosure have been described as including a first light-emitting diode 140A and a second light-emitting diode 140B for pixel P, but it is not necessarily limited to this. For example, pixel P may include only the first light-emitting diode 140A or the second light-emitting diode 140B.

[0050] Meanwhile, the gating driver GC, the data driver DC, and the timing controller TC are disposed below the display panel 110, and multiple wirings such as the gating line GL and the data line DL can be disposed on the side surface of the display panel 110. However, embodiments of this disclosure are not limited thereto. For example, multiple wirings such as the gating line GL and the data line DL can also be disposed within the display panel 110.

[0051] Figure 3 This is a plan view of a display device according to an exemplary embodiment of the present disclosure. Figure 4 and Figure 5 This is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Specifically, Figure 3 This is a plan view of a portion of pixel P, and more specifically, a plan view illustrating the structure of the light-emitting diode 140 and its periphery. Furthermore, Figure 4 yes Figure 3 The image shows a vertical cross-sectional view of pixel P from IV to IV'. (See image.) Figure 4As shown, a display device 100 according to an exemplary embodiment of the present disclosure includes a substrate 111, a semiconductor element 120, a gate insulating layer 131, a passivation layer 132, a first reflective layer 171, an adhesive layer 133, a light-emitting diode 140, a first insulating layer 151, and connecting electrodes 161 and 162.

[0052] Substrate 111 is a substrate that supports various functional components and may be an insulating material. For example, substrate 111 may include glass or polyimide. When substrate 111 is flexible, substrate 111 may also include a backplate attached to the rear surface of substrate 111 to reinforce substrate 111. The backplate may include a plastic material, for example, polyethylene terephthalate.

[0053] Semiconductor element 120 is disposed on substrate 111. Semiconductor element 120 can be used as a driving element of display device 100. Semiconductor element 120 can be a thin-film transistor (TFT), N-channel metal-oxide-semiconductor (NMOS), P-channel metal-oxide-semiconductor (PMOS), complementary metal-oxide-semiconductor (CMOS), or field-effect transistor (FET), but is not limited thereto. In the following description, it is assumed that multiple semiconductor elements 120 are thin-film transistors, but are not limited thereto.

[0054] Semiconductor device 120 includes gate electrode 121, active layer 122, source electrode 123 and drain electrode 124.

[0055] A gate electrode 121 is formed on a substrate 111. The gate electrode 121 may be formed of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof, but is not limited thereto.

[0056] A gate insulating layer 131 is disposed on the gate electrode 121. The gate insulating layer 131 is a layer used to insulate the gate electrode 121 from the active layer 122 and can be formed of an insulating material. For example, the gate insulating layer 131 can be composed of a single layer or a double layer of silicon oxide SiOx or silicon nitride SiNx, but is not limited thereto.

[0057] The active layer 122 is disposed on the gate insulating layer 131. For example, the active layer 122 may be formed of oxide semiconductor, amorphous silicon or polycrystalline silicon, but is not limited thereto.

[0058] The source electrode 123 and the drain electrode 124 are disposed on the active layer 122 and spaced apart from each other. The source electrode 123 and the drain electrode 124 may be electrically connected to the active layer 122. The source electrode 123 and the drain electrode 124 may be formed of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti) or alloys thereof, but are not limited thereto.

[0059] A passivation layer 132 is disposed on the semiconductor element 120. The passivation layer 132 is provided to protect the element, such as the semiconductor element 120, disposed beneath the passivation layer 132. The passivation layer 132 may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. The passivation layer 132 may include a first via H1 for electrically connecting the semiconductor element 120 and the first connection electrode 161, and a second via H2 for electrically connecting the common line CL and the second connection electrode 162.

[0060] A buffer layer may be disposed between the substrate 111 and the semiconductor device 120. The buffer layer can minimize the diffusion of moisture or impurities from the substrate 111 to the upper part of the substrate 111. The buffer layer may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0061] A gate line GL is disposed on the gate insulating layer 131. The gate line GL may be disposed on the same layer as the gate electrode 121, and the gate line GL may be formed of the same material as the gate electrode 121. The data line DL may also be formed using the same process as the gate line GL and extend in a different direction from the gate line GL.

[0062] A common line CL is disposed on the gate insulating layer 131. The common line CL is a wiring for applying a common voltage to the light-emitting diode 140 and can be configured to be spaced apart from the gating line GL or the data line DL. The common line CL can extend in the same direction as the gating line GL or the data line DL. The common line CL can be formed of the same material as the source electrode 123 and the drain electrode 124, or it can be formed of the same material as the gate electrode 121.

[0063] A first reflective layer 171 is disposed on the passivation layer 132. The first reflective layer 171 is a layer used to improve the luminous efficiency of the light-emitting diode 140. The first reflective layer 171 reflects light emitted from the light-emitting diode 140 that is directed toward the substrate 111 toward the upper part of the display device 100 and outputs it to the outside of the display device 100. The first reflective layer 171 can be formed of a metallic material with high reflectivity, and may include, for example, silver (Ag) or aluminum (Al). However, pure silver (Ag) may react with oxygen or nitrogen, which may reduce reflectivity. Therefore, the first reflective layer 171 can be formed by a multilayer of ITO / Ag / ITO or by adding impurities such as palladium (Pd) or copper (Cu).

[0064] An adhesive layer 133 is disposed on the first reflective layer 171. The adhesive layer 133 is a layer for fixing the light-emitting diode 140 to the substrate 111 and can electrically insulate the first reflective layer 171, which includes a metallic material, from the light-emitting diode 140. However, the adhesive layer is not necessarily limited to this. When the light-emitting diode is a vertical type with one electrode exposed underneath, the adhesive layer 133 may include a conductive material to electrically connect one electrode of the light-emitting diode to the first reflective layer 171. The adhesive layer 133 may be formed of a thermosetting or photocurable material and may be selected from, but is not limited to, adhesive polymers, epoxy resists, UV resins, polyimide-based materials, acrylic-based materials, polyurethane-based materials, and polydimethylsiloxane (PDMA).

[0065] The adhesive layer 133 may include a first hole H1 for electrically connecting the semiconductor element 120 and the first connection electrode 161, and a second hole H2 for electrically connecting the common line CL and the second connection electrode 162. In this case, the first hole H1 and the second hole H2 included in the adhesive layer 133 may have a larger cross-sectional area than the first hole H1 and the second hole H2 included in the passivation layer 132. Meanwhile, as... Figure 4 As shown, the adhesive layer 133 can be disposed on the entire surface of the substrate 111, but is not necessarily limited thereto. In some exemplary embodiments, the adhesive layer 133 can be formed in an island shape to include a portion overlapping with the light-emitting diode 140. That is, the adhesive layer 133 can completely overlap with the light-emitting diode 140, but can be configured to be smaller than the first reflective layer 171.

[0066] Multiple light-emitting diodes 140 are formed on separate growth substrates and then moved to substrate 111 via a substrate separation process. For the substrate separation process that separates the multiple light-emitting diodes 140 from the growth substrate, a laser lift-off (LLO) process or a chemical lift-off (CLO) process can be applied. In this case, the light-emitting diodes 140 are separated from the growth substrate, allowing the portion of the encapsulation layer 146 adjacent to the growth substrate to be removed along with the growth substrate.

[0067] The light-emitting diode 140 is disposed on the adhesive layer 133, thereby overlapping with the first reflective layer 171. The light-emitting diode 140 may include an n-type layer 141, an active layer 142, a p-type layer 143, an n-electrode 145, a p-electrode 144, and an encapsulation layer 146. Even though this specification describes the light-emitting diode 140 as having a lateral structure in which the n-electrode 145 and p-electrode 144 are disposed parallel to each other on the upper surface of the light-emitting diode 140, it is not necessarily limited to this. For example, the light-emitting diode 140 may have a vertical structure in which the n-electrode 145 and p-electrode 144 are disposed on different surfaces, or a flip structure in which the n-electrode 145 and p-electrode 144 are disposed on the same surface.

[0068] The n-type layer 141 is a semiconductor layer in which negatively charged free electrons move as charge carriers to generate current, and can be formed from an n-GaN-based material. The n-GaN-based material can be GaN, AlGaN, InGaN, or AlInGaN, and Si, Ge, Se, Te, or C can be used as impurities for doping the n-type layer 141. Furthermore, in some cases, a buffer layer, such as an undoped GaN-based semiconductor layer, can be additionally formed between the growth substrate and the n-type layer 141.

[0069] The active layer 142 is disposed on the n-type layer 141 and may have a multiple quantum well (MQW) structure, which has a well layer and a barrier layer with a higher bandgap than the well layer. For example, the active layer 142 may have a multiple quantum well structure such as InGaN / GaN.

[0070] The p-type layer 143 is a semiconductor layer in which positively charged holes move as charge carriers to generate current, and can be formed from a p-GaN-based material. The p-GaN-based material can be GaN, AlGaN, InGaN, or AlInGaN, and Mg, Zn, or Be can be used as impurities for doping the p-type layer 143.

[0071] A p-electrode 144 is disposed on the p-type layer 143 to form an ohmic contact. The p-electrode 144 may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto. Furthermore, an n-electrode 145 is disposed on the n-type layer 141 for an ohmic contact. The n-electrode 145 may be formed of the same material as the p-electrode 144.

[0072] An encapsulation layer 146 is disposed on the n-type layer 141 and the p-type layer 143 to protect the n-type layer 141 and the p-type layer 143. The encapsulation layer 146 may be formed of SiO2, Si3N4, or resin. The encapsulation layer 146 may be disposed on the entire surface of the light-emitting diode 140 except for the lower part of the light-emitting diode 140. However, portions of the p-electrode 144 and the n-electrode 145 are exposed by the encapsulation layer 146, and the p-electrode 144 and the n-electrode 145 may make ohmic contact with the first connection electrode 161 and the second connection electrode 162, respectively, through the exposed areas.

[0073] A first insulating layer 151 is disposed on the semiconductor element 120. The first insulating layer 151 may be formed of an organic material such as propylene, polyimide, benzocyclobutene resin or acrylic resin, but is not limited thereto.

[0074] The first insulating layer 151 can be configured to cover the entire surface of the substrate 111. Furthermore, the first insulating layer 151 is configured to be adjacent to the side surface of the light-emitting diode 140, allowing the light-emitting diode 140 to be securely fixed to the substrate 111. Additionally, scratches or cracks may be generated in the encapsulation layer 146 on the side surface of the light-emitting diode 140, potentially exposing a portion of the n-type layer 141 while it is mounted on the substrate 111. The first insulating layer 151 is configured to be in close contact with the side surface of the light-emitting diode 140, electrically insulating the n-type layer 141 of the light-emitting diode 140 from the p-type layer 143.

[0075] The first insulating layer 151 may include a first hole H1 for electrically connecting the semiconductor element 120 and the first connecting electrode 161, and a second hole H2 for electrically connecting the common line CL and the second connecting electrode 162. In this case, the first hole H1 and the second hole H2 included in the first insulating layer 151 may have a larger cross-sectional area than the first hole H1 and the second hole H2 included in the adhesive layer 133.

[0076] The first insulating layer 151 can planarize the space between the plurality of light-emitting diodes 140. The first insulating layer 151 compensates for the steps on the substrate 111 caused by the semiconductor element 120 and the first reflective layer 171, so as to allow smooth ohmic contact between the connecting electrodes 161 and 162 and the semiconductor element 120 or the common line CL.

[0077] The first insulating layer 151 may be thicker than the light-emitting diode 140. Therefore, the first insulating layer 151 may overlap with the upper part of the light-emitting diode 140. (Refer to...) Figure 4 The first insulating layer 151 may cover the encapsulation layer 146 between the p electrode 144 and the n electrode 145. However, the first insulating layer 151 may not be formed on at least a portion of the p electrode 144 to connect the p electrode 144 and the first connection electrode 161 to each other. Furthermore, the first insulating layer 151 may not be formed on at least a portion of the n electrode 145 to connect the n electrode 145 and the second connection electrode 162 to each other.

[0078] A first connection electrode 161 is disposed on the first insulating layer 151 and the light-emitting diode 140. The first connection electrode 161 electrically connects the p-electrode 144 of the light-emitting diode 140 and the semiconductor element 120. (Refer to...) Figure 4The first connection electrode 161 is connected to the source electrode 123 of the semiconductor element 120 through the first hole H1. When the display device 100 is a top-emitting type, the first connection electrode 161 can be formed of a transparent conductive material, and when the display device 100 is a bottom-emitting type, the first connection electrode 161 can be formed of a reflective conductive material. The transparent conductive material can be indium tin oxide (ITO) or indium zinc oxide (IZO), but is not necessarily limited to these. The reflective conductive material can be Al, Ag, Au, Pt, or Cu, but is not necessarily limited to these.

[0079] The second connection electrode 162 is disposed on the first insulating layer 151 and the light-emitting diode 140. The second connection electrode 162 electrically connects the n-electrode 145 of the light-emitting diode 140 to the common line CL. The second connection electrode 162 is connected to the common line CL through the second hole H2. The second connection electrode 162 can be formed of a transparent conductive material or a reflective conductive material, or it can be formed of the same material as the first connection electrode 161. The reflective conductive material can be Al, Ag, Au, Pt, or Cu, but is not necessarily limited to these.

[0080] Reference Figure 3 and Figure 4 The first connecting electrode 161 and the second connecting electrode 162 are physically separated on the encapsulation layer 146 and the first insulating layer 151 between the p-type electrode 144 and the n-type electrode 145. As described above, the p-type layer 143 is electrically insulated from the n-type layer 141, allowing the light-emitting diode 140 to emit light normally.

[0081] Figure 5 yes Figure 3 The image shows a vertical cross-sectional view of pixel P from V to V'. Figure 4 The display device 100 and Figure 5 The only difference between the display devices 100 is the second insulating layer 152, the third insulating layer 153, and the second reflective layer 172, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0082] A second insulating layer 152 is disposed on the substrate 111. The second insulating layer 152 may be formed of a negative photoresist material. The second insulating layer 152 may be formed on the light-emitting diode 140 and the first insulating layer 151, and completely cover the light-emitting diode 140 and the first insulating layer 151. Specifically, refer to... Figure 5 The second insulating layer 152 is configured to surround the light-emitting diode 140. That is, the second insulating layer 152 can be configured such that the light-emitting diode 140 is contained within the second insulating layer 152. At the same time, the second insulating layer 152 can be disposed on the first insulating layer 151, thereby overlapping with the first hole H1, the second hole H2, and the semiconductor element 120.

[0083] In this specification, for better understanding, Figure 5 In the cross-sectional view shown, the second insulating layer 152 disposed in the central portion is described as a light-collecting structure CE. That is, the second insulating layer 152 may include the light-collecting structure CE. (Refer to...) Figure 5 The light-collecting structure CE can be configured to overlap with the periphery of the light-emitting diode 140 and the first insulating layer 151, as well as the upper part of the light-emitting diode 140 and the first insulating layer 151. Furthermore, the second insulating layer 152 includes a third hole H3 and a fourth hole H4, and the light-collecting structure CE can be distinguished from the second insulating layer 152 by using the third hole H3 and the fourth hole H4 as boundaries.

[0084] like Figure 5 As shown in the cross-sectional view, the light-collecting structure CE can have a dome shape. That is, the angle between the normal of the substrate 111 and the side surface of the light-collecting structure CE can be an acute angle, so the side surface of the light-collecting structure CE can have an inverted conical angle. The horizontal cross-sectional area of ​​the light-collecting structure CE can be configured to increase upwards from the surface near the substrate 111.

[0085] Pixel P can be divided into a light-emitting region EA and a non-light-emitting region NEA. In the light-emitting region EA, a light-emitting diode 140 and a light-collecting structure CE are provided, and the light generated from the light-emitting diode 140 is guided to the upper part of the light-emitting diode 140. In the non-light-emitting region NEA, a semiconductor element 120, a first insulating layer 151, and a second insulating layer 152 are provided.

[0086] The third hole H3 and the fourth hole H4, included in the second insulating layer 152, can be configured to overlap with the light-emitting region EA and the non-light-emitting region NEA. The angle formed by the side surface of the first insulating layer 151 disposed in the non-light-emitting region NEA and the normal to the substrate 111 can be an obtuse angle. That is, the side surface of the first insulating layer 151 disposed in the non-light-emitting region NEA can form an obtuse angle with the bottom surface of the third hole H3, so that the side surface of the first insulating layer 151 can form a positive cone angle. In the non-light-emitting region NEA, the second insulating layer 152 disposed on the first insulating layer 151 can form an inverted cone angle. That is, the angle formed by the side surface of the second insulating layer 152 and the upper surface of the first insulating layer 151 can be an acute angle.

[0087] The second reflective layer 172 is disposed in the third hole H3 and the fourth hole H4. Light emitted from the light-emitting diode 140 that points towards the side of the light-emitting diode 140 is reflected by the second reflective layer 172 to the upper part of the display device 100 for output to the outside of the display device 100. The second reflective layer 172 is disposed along the side surface of the light-collecting structure CE. That is, the second reflective layer 172 extends along the side surface of the light-collecting structure CE to the same height as the upper surface of the light-collecting structure CE. Therefore, light emitted from the light-emitting diode 140 is guided upwards towards the light-emitting area EA and thus collected. Therefore, the luminous efficiency of the light-emitting area EA can be improved and the power consumed by the display panel 110 can be efficiently controlled.

[0088] The second reflective layer 172 can be electrically connected to the first reflective layer 171. (See reference...) Figure 5 Although the example illustrates contact between the second reflective layer 172 and both ends of the first reflective layer 171, it is not necessarily limited to this. For example, the width of the first reflective layer 171 can be extended to be greater than... Figure 5 The length shown is longer, and the third hole H3 and the fourth hole H4 may expose only the upper surface of the first reflective layer 171. In this case, the second reflective layer 172 may be in electrical contact with the upper surfaces of both ends of the first reflective layer 171. In some exemplary embodiments, the first reflective layer 171, the second reflective layer 172, and the common line CL may be electrically connected, or a voltage different from the constant voltage applied to the common line CL may be applied to the second reflective layer 172, or the second reflective layer 172 may be held in an electrically floating state.

[0089] Reference Figure 3 According to an exemplary embodiment of this disclosure, the second reflective layer 172 is spaced apart from the light-emitting diode 140 by a predetermined distance to surround the light-emitting diode 140. In some exemplary embodiments, the horizontal cross-sectional shape of the second reflective layer 172 may be circular, and as shown... Figure 3 As shown, it can be an open annular shape with portions of both ends interrupted. Furthermore, the portion of the second reflective layer 172 disposed on one side of the light-emitting diode 140 can be symmetrical about the light-emitting diode 140 with the portion of the second reflective layer 172 disposed on the other side of the light-emitting diode 142. The second reflective layer 172 disposed on one side of the light-emitting diode 140 can have a "U" shape or a "C" shape. Meanwhile, the third hole H3 included in the second insulating layer 152 can have a shape similar to... Figure 3 The second reflective layer 172 shown has the same shape on the left side, and the fourth hole H4 included in the second insulating layer 152 can have the same shape as the left side. Figure 3 The right side of the second reflective layer 172 shown has the same shape.

[0090] Reference Figure 5A third insulating layer 153 is disposed on the third hole H3 and the fourth hole H4. The third insulating layer 153 may overlap with the third hole H3 and the fourth hole H4 of the non-light-emitting region NEA or with a portion of the light-emitting region EA, but is not limited thereto. For example, the third insulating layer 153 may overlap only with the non-light-emitting region NEA.

[0091] The third insulating layer 153 can be formed of an insulating material and may include a black material or a light-absorbing material. For example, the third insulating layer 153 can be formed of a carbon-based mixture, and specifically, includes carbon black. Some light reaching the second reflective layer 172 can pass through the second reflective layer 172 and be output to the non-light-emitting area NEA, thereby potentially degrading the luminous efficiency of the display device 100. Therefore, the third insulating layer 153 is disposed in the third hole H3 and the fourth hole H4 to increase the light collection rate of the light-emitting area EA and further improve the luminous efficiency. In addition, the heat concentrated on the light-emitting diode 140 and the second reflective layer 172 is absorbed by the third insulating layer 153 and output to the outside, thus extending the lifespan of the display device 100. Meanwhile, referring to... Figure 4 The third insulating layer 153 can be formed on the non-light-emitting region NEA. The third insulating layer 153 can be formed on the second insulating layer 152 of the non-light-emitting region NEA and can overlap with the first hole H1 and the second hole H2. Therefore, color mixing between multiple pixels P is minimized, which can improve the display quality of the display device 100.

[0092] Figure 6 This is an enlarged cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Figure 7 This is a table showing experimental results of various exemplary and comparative embodiments of this disclosure. Figure 6 This is a diagram illustrating the design guidelines for the light-collecting structure CE and the second reflective layer 172, and its structure is consistent with... Figures 3 to 5 The display device 100 shown is basically the same, so redundant descriptions will be omitted. Figure 7 This is a table showing the results obtained by conducting experiments on the gradient of the second reflective layer 172.

[0093] Reference Figure 7 The experimental results of total light intensity, total light intensity ratio, front brightness, and front brightness ratio were compared between Embodiment A (where the second reflective layer 172 as a side reflector is not provided) and various experimental embodiments B to G (where the second reflective layer 172 has various gradients). At this time, the gradient is the first angle between the virtual normal of the substrate 111 and the second reflective layer 172. 1, and as Figure 6 As shown, the second reflective layer 172 is relative to the first angle The reference line 1 is defined by a straight line connecting the two ends of the side surface of the light-collecting structure CE. (Refer to...) Figure 7 The experimental results, when the first angle At an angle of 30 degrees, the maximum frontal brightness ratio is measured, followed by measurements at 60 degrees and 50 degrees. Therefore, the gradient of the second reflective layer 172 can be set such that the first angle... 1 has a value between 30 degrees and 60 degrees. That is, the angle between the side surface of the light-collecting structure CE and the bottom surface of the light-collecting structure CE can ideally be designed to have a value between 120 degrees and 150 degrees.

[0094] Reference Figure 6 When the straight-line distance from the p-type layer 143 of the light-emitting diode 140 to the upper surface of the light-collecting structure CE is defined as the first length W1 and the straight-line distance from the p-type layer 143 to the second reflective layer 172 is defined as the second length W2, the first length W1 can ideally be designed to be equal to or greater than the second length W2. Specifically, the height of the second reflective layer 172 and the height (or thickness) of the light-collecting structure CE can be ideally designed considering the refractive index and the critical angle of total internal reflection of the light-collecting structure CE. To minimize the phenomenon that light emitted from the light-emitting diode 140 is totally internally reflected from the upper surface of the light-collecting structure CE and trapped in the light-collecting structure CE, the second length W2 can be ideally made larger. For example, since the refractive index of normal organic materials is 1.5, if we assume the refractive index of the light-collecting structure CE is 1.5, the critical angle of total internal reflection is approximately 42 degrees. Therefore, the height of the second reflective layer 172 can be ideally designed such that... Figure 6 The second angle shown 2 is greater than 42 degrees. That is to say, the thickness and second length W2 of the light-collecting structure CE can be ideally designed such that... Figure 6 The second angle shown 2 is greater than 42 degrees. At this point, the second angle... 2 is the angle formed by the straight line connecting the corner of the p-type layer 143 of the light-emitting diode 140 and one end of the second reflective layer 172 and the virtual normal of the substrate.

[0095] Figures 8a to 8e This is a schematic process diagram illustrating a method for manufacturing a display device according to an exemplary embodiment of the present disclosure. Figures 9a to 9e This is a schematic process diagram illustrating a method of manufacturing a display device according to another exemplary embodiment of the present disclosure.

[0096] Figures 8a to 8e The process diagram shown illustrates Figures 3 to 6 The manufacturing process of the display device 100, and its structure and Figure 5 The display device 100 is basically the same as the display device 100, thus redundant descriptions will be omitted. Figures 8a to 8e The process drawing is for display device 100. Figure 5The process sequence of the vertical cross-section diagram.

[0097] Reference Figure 8a A light-emitting diode 140 is disposed on a substrate 111 on which a gate insulating layer 131, a passivation layer 132, a first reflective layer 171, and an adhesive layer 133 are formed, and a first connection electrode 161, a second connection electrode 162, and a first insulating layer 151 are formed. The first insulating layer 151 is completed by forming a first insulating material layer on the substrate 111 and then removing a portion of it. The first insulating material layer can be a negative photoresist or an organic material. Next, holes are formed in the first insulating layer 151 in the regions of the light-emitting diode 140 corresponding to the p-electrode 144 and the n-electrode 145, and the first connection electrode 161 and the second connection electrode 162 are formed on the first insulating layer 151, the p-electrode 144, and the n-electrode 145, respectively. Then, a second insulating material layer is formed on the substrate 111. The second insulating material layer can be a different material from the first insulating material layer and can be a negatively charged organic material. That is, the second insulating layer can be a negative photoresist. The second insulating material layer is formed on the entire surface of the substrate 111, thereby overlapping with the light-emitting diode 140 and the first insulating layer 151.

[0098] Next, a third hole H3 and a fourth hole H4 are formed on the second insulating material layer. The second insulating material layer can be etched so that the side surfaces of the second insulating material layer exposed through the third hole H3 and the fourth hole H4 have an inverted conical gradient. Therefore, a second insulating layer 152 with an inverted conical gradient on its side surface and a light-collecting structure CE can be formed. That is, in the non-light-emitting region NEA, the side surface of the second insulating layer 152 exposed on one side by the third hole H3 and the fourth hole H4 has an inverted conical gradient. Furthermore, in the light-emitting region EA, the side surface of the light-collecting structure CE exposed on one side by the third hole H3 and the fourth hole H4 has an inverted conical gradient. In other words, the light-collecting structure CE can be formed with an inverted dome shape. The inverted conical gradient can be controlled by adjusting the amount of light irradiated onto the second insulating material layer, the development time, the baking time, and the baking temperature.

[0099] Next, refer to Figure 8b A reflective material layer 172m is formed on the substrate 111. (Refer to...) Figure 8bA reflective material layer 172m is formed on the second insulating layer 152 and in the third hole H3 and the fourth hole H4. Specifically, the reflective material layer 172m can ideally be formed on the entire side surface of the light-collecting structure CE with a constant thickness. Furthermore, the reflective material layer 172m can be formed on the bottom surface of the third hole H3 and the fourth hole H4 and can be electrically connected to the first reflective layer 171. The reflective material layer 172m can be formed of a metallic material with high reflectivity. For example, the reflective material layer 172m can include silver (Ag) or aluminum (Al) and can be the same material as the first reflective layer 171.

[0100] Next, refer to Figure 8c A photosensitive material layer 154m is formed on substrate 111. The photosensitive material layer 154m can be a positive photoresist or an organic material. Next, referring to... Figure 8d A portion of the photosensitive material layer 154m is etched to retain only the photosensitive material layer 154m' in the area overlapping with the third hole H3 and the fourth hole H4. Next, refer to... Figure 8e The reflective material layer 172m on the upper surface of the second insulating layer 152 is etched. That is, the reflective material layer 172m on the upper surface of the second insulating layer 152 in the non-light-emitting region NEA and the reflective material layer 172m on the upper surface of the light-collecting structure CE in the light-emitting region EA are etched. Therefore, the second reflective layer 172 is formed on the side surface of the light-collecting structure CE. Next, the photosensitive material layer 154m' contained in the third hole H3 and the fourth hole H4 is removed.

[0101] according to Figures 8a to 8e The manufacturing method of the display device 100 according to an exemplary embodiment of the present disclosure shows that the display device 100 can form a light-collecting structure CE configured to surround a light-emitting diode 140. A second reflective layer 172 can be formed on the side surface of the light-collecting structure CE. The side surface of the light-collecting structure CE can be formed with an inverted conical gradient, such that the second reflective layer 172 guides the light emitted from the light-emitting diode 140 to the upper part of the light-emitting diode 140 to improve the luminous efficiency of the display device 100. In addition, the third hole H3 and the fourth hole H4 are filled with a photosensitive material layer 154m', so that only the reflective material layer 172m located on the upper surface of the light-collecting structure CE can be etched. Therefore, the height from the substrate 111 to the light-collecting structure CE can be equal to the height from the substrate 111 to the second reflective layer 172. Therefore, most of the light emitted from the light-emitting diode 140 can be reflected upwards onto the substrate 111, and the luminous efficiency of the display device 100 can be further improved.

[0102] Figures 9a to 9e The process diagram shown illustrates Figures 3 to 6 The manufacturing process of the display device 100. Figures 9a to 9e process drawings and Figures 8a to 8e The only difference between the process diagrams shown is the process used to form the second reflective layer 172, while the other processes are basically the same, so redundant descriptions will be omitted.

[0103] Reference Figure 9c A photosensitive material layer 154m is formed on the substrate 111. Next, referring to... Figure 9d The photosensitive material layer 154m and the reflective material layer 172m on the entire surface of the substrate 111 are etched. In this case, portions of the photosensitive material layer 154m and the reflective material layer 172m can be etched simultaneously using a dry etching process. (Refer to...) Figure 9e The reflective material layer 172m above the second insulating layer 152 is etched to form the second reflective layer 172 on the side surface of the light collection structure CE. Then, the photosensitive material layer 154m' remaining in the third hole H3 and the fourth hole H4 is removed.

[0104] according to Figures 9a to 9e The manufacturing method of the display device 100 according to another exemplary embodiment of the present disclosure shows that the display device 100 can form a light-collecting structure CE configured to surround the light-emitting diode 140 and the second reflective layer 172. Figures 8a to 8e Compared to the process shown, Figures 9a to 9e The process shown does not require the removal of a portion of the 154m photosensitive material layer, thus allowing for efficient management of process costs and time.

[0105] Exemplary embodiments of this disclosure can also be described as follows: A display device according to one aspect of the present disclosure may include: a substrate including pixels; light-emitting diodes disposed in the pixels; an insulating layer covering the light-emitting diodes; a light-collecting structure surrounding at least a portion of the insulating layer; and a reflective layer disposed on a side surface of the light-collecting structure, wherein the side surface of the light-collecting structure has an inverted conical shape.

[0106] According to another feature of this disclosure, the display device may further include pixel circuitry disposed on a substrate, wherein the pixel circuitry is electrically connected to a light-emitting diode through a first hole formed in an insulating layer.

[0107] According to another feature of this disclosure, the display device may further include a first connection electrode disposed on an insulating layer, wherein the first connection electrode electrically connects the pixel circuit and the light-emitting diode.

[0108] According to another feature of this disclosure, the maximum height of the reflective layer can be higher than the height of the first electrode of the light-emitting diode.

[0109] According to another feature of this disclosure, the thickness of the insulating layer overlapping the first electrode can be greater than the straight-line distance from the first electrode to the reflective layer.

[0110] According to another feature of this disclosure, a light-emitting diode may include an n-type layer, an active layer, a p-type layer, a first electrode electrically connected to the n-type layer, and a second electrode electrically connected to the p-type layer, wherein the first electrode and the second electrode may be disposed on the same surface of the light-emitting diode.

[0111] According to another feature of this disclosure, the angle formed by the normal of the substrate and the reflective layer can be an acute angle.

[0112] According to another feature of this disclosure, in the horizontal cross-sectional shape of the pixel, the reflective layer can be configured to have a “C” shape to surround the light-emitting diode.

[0113] According to another feature of this disclosure, the reflective layer can be set in a doubly symmetrical manner in the horizontal cross-sectional shape of the pixel.

[0114] A method for manufacturing a display device according to one aspect of the present disclosure may include the following steps: disposing a light-emitting diode on a substrate on which pixel circuits are formed; forming a first insulating layer on the light-emitting diode; forming a second insulating layer on the light-emitting diode and the first insulating layer; forming a metal material layer on the second insulating layer; and forming a reflective layer by etching at least a portion of the metal material layer, wherein the reflective layer is formed on a side surface of the second insulating layer and forms an acute angle with the normal of the substrate.

[0115] According to another feature of this disclosure, the manufacturing method may further include the steps of: forming a first hole and a second hole in a first insulating layer; and forming a first connecting electrode and a second connecting electrode to overlap with at least a portion of the first hole and the second hole, wherein the steps of forming the first hole and the second hole and forming the first connecting electrode and the second connecting electrode are performed after the step of forming the first insulating layer and before the step of forming the second insulating layer.

[0116] According to another feature of this disclosure, the light-emitting diode may include a first electrode and a second electrode, the first electrode being electrically connected to a first connection electrode and the second electrode being electrically connected to a second connection electrode.

[0117] According to another feature of this disclosure, the light-emitting diode may include an n-type layer, an active layer, and a p-type layer, with a first electrode electrically connected to the p-type layer and a first connection electrode electrically connected to the p-type layer and the pixel circuit.

[0118] According to another feature of this disclosure, the manufacturing method may further include the step of forming a photosensitive material layer on a substrate and a second insulating layer, wherein the step of forming the photosensitive material layer is performed between the step of forming the metal material layer and the step of forming the reflective layer.

[0119] According to another feature of this disclosure, the step of forming the reflective layer may include etching the metal material layer exposed by the photosensitive material layer.

[0120] According to another feature of this disclosure, the thickness of the second insulating layer formed on the first electrode can be greater than the distance from the first electrode to the reflective layer.

[0121] According to another feature of this disclosure, the manufacturing method may further include the step of forming a third hole and a fourth hole in a second insulating layer, wherein the step of forming the third hole and the fourth hole is performed before the step of forming a metal material layer.

[0122] According to another feature of this disclosure, in a horizontal cross-sectional shape including a light-emitting diode, a third hole and a fourth hole surround the light-emitting diode, and the third hole can be physically separated from the fourth hole.

[0123] According to another feature of this disclosure, the manufacturing method may further include the step of forming a third insulating layer on a second insulating layer, wherein the third insulating layer comprises a black material.

[0124] According to another feature of this disclosure, a third insulating layer may be formed in the third and fourth holes.

[0125] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and are not limiting of the present disclosure. The scope of protection of the present disclosure should be interpreted based on the appended claims, and all technical concepts within their equivalents should be understood to fall within the scope of the present disclosure.

Claims

1. A display device, the display device comprising: A substrate, the substrate including pixels; A light-emitting diode, wherein the light-emitting diode is disposed in the pixel; An insulating layer covering the light-emitting diode; A light-collecting structure, wherein the light-collecting structure is located on at least a portion of the insulating layer; as well as A reflective layer is disposed on the side surface of the light-collecting structure. The side surface of the light-collecting structure has an inverted conical shape. The light-collecting structure is configured to overlap with the upper part of the light-emitting diode and the upper part of the insulating layer.

2. The display device according to claim 1, further comprising: Pixel circuit, the pixel circuit being disposed on the substrate, The pixel circuit is electrically connected to the light-emitting diode through a first hole formed in the insulating layer.

3. The display device according to claim 2, further comprising: The first connecting electrode is disposed on the insulating layer. The first connecting electrode electrically connects the pixel circuit to the light-emitting diode.

4. The display device according to claim 1, wherein, The top of the reflective layer is higher than the top of the first electrode of the light-emitting diode.

5. The display device according to claim 4, wherein, The thickness of the insulating layer overlapping the first electrode is greater than the vertical distance from the top of the first electrode to the top of the reflective layer.

6. The display device according to claim 1, wherein, The light-emitting diode includes an n-type layer, an active layer, a p-type layer, a first electrode electrically connected to the n-type layer, and a second electrode electrically connected to the p-type layer, wherein the first electrode and the second electrode are disposed on the same surface of the light-emitting diode.

7. The display device according to claim 1, wherein, The angle formed by the normal of the substrate and the surface of the reflective layer at the bottom of the reflective layer is an acute angle.

8. The display device according to claim 7, wherein, The angle formed by the normal of the substrate and the reflective layer has a value between 30 degrees and 60 degrees.

9. The display device according to claim 7, wherein, In the horizontal cross-sectional shape of the pixel, the reflective layer is configured to have a "C" shape to surround the light-emitting diode.

10. The display device according to claim 9, wherein, In the horizontal cross-sectional shape of the pixel, the reflective layer is arranged symmetrically.

11. The display device according to claim 1, further comprising: Another reflective layer is disposed between the substrate and the light-emitting diode and overlaps with the light-emitting diode.

12. The display device according to claim 11, wherein, The other reflective layer is electrically connected to the reflective layer.

13. The display device according to claim 1, wherein, The insulating layer is in direct contact with the side surface of the light-emitting diode.

14. The display device according to claim 1, wherein, The light-collecting structure has an inverted dome shape.

15. The display device according to claim 1, in, The pixel includes a first light-emitting diode and a second light-emitting diode. The first light-emitting diode emits light of the same color as the second light-emitting diode.

16. The display device according to claim 15, in, The first light-emitting diode is disposed in the first row of the pixels, and the first light-emitting diode is composed of elements that emit light of different colors. The second light-emitting diode is disposed in the second row of the pixel and is composed of an element that emits light of the same color as the first light-emitting diode.

17. The display device according to claim 16, in, The first light-emitting diode and the second light-emitting diode are arranged in a row in the pixel and are adjacent to each other.

18. A method for manufacturing a display device, the method comprising the following steps: Light-emitting diodes are disposed on a substrate, and pixel circuits are formed on the substrate; A first insulating layer is formed on the light-emitting diode; A second insulating layer is formed on the light-emitting diode and the first insulating layer; A metallic material layer is formed on the second insulating layer; as well as The reflective layer is formed by etching at least a portion of the metal material layer. The reflective layer is formed on the side surface of the second insulating layer, and the bottom of the reflective layer forms an acute angle with the normal of the substrate. A portion of the second insulating layer is formed to overlap with the upper part of the light-emitting diode and the upper part of the first insulating layer.

19. The manufacturing method according to claim 18, wherein, The acute angle has a value between 30 degrees and 60 degrees.

20. The manufacturing method according to claim 18, further comprising the following step: A first hole and a second hole are formed in the first insulating layer; as well as A first connecting electrode and a second connecting electrode are formed, wherein the first connecting electrode and the second connecting electrode overlap with at least a portion of the first hole and the second hole. The steps of forming the first hole and the second hole, as well as the steps of forming the first connecting electrode and the second connecting electrode, are performed after the step of forming the first insulating layer and before the step of forming the second insulating layer.

21. The manufacturing method according to claim 20, wherein, The light-emitting diode includes a first electrode and a second electrode, wherein the first electrode is electrically connected to the first connecting electrode, and the second electrode is electrically connected to the second connecting electrode.

22. The manufacturing method according to claim 21, wherein, The light-emitting diode further includes an n-type layer, an active layer, and a p-type layer. The first electrode is electrically connected to the p-type layer, and the first connection electrode is electrically connected to the p-type layer and the pixel circuit.

23. The manufacturing method according to claim 18, further comprising the following step: A photosensitive material layer is formed on the substrate and the second insulating layer. The step of forming the photosensitive material layer is performed between the step of forming the metal material layer and the step of forming the reflective layer.

24. The manufacturing method according to claim 23, wherein, The step of forming the reflective layer includes etching the metal material layer exposed through the photosensitive material layer.

25. The manufacturing method according to claim 21, wherein, The thickness of the second insulating layer formed on the first electrode is greater than the vertical distance from the top of the first electrode to the top of the reflective layer.

26. The manufacturing method according to claim 18, further comprising the following step: A third and a fourth hole are formed in the second insulating layer. The steps of forming the third hole and the fourth hole are performed before the step of forming the metal material layer.

27. The manufacturing method according to claim 26, wherein, In a horizontal cross-section including the light-emitting diode, the third hole and the fourth hole surround the light-emitting diode, and the third hole and the fourth hole are physically separated.

28. The manufacturing method according to claim 26, further comprising the following step: A third insulating layer is formed on the second insulating layer. The third insulating layer comprises a black material.

29. The manufacturing method according to claim 28, wherein, The third insulating layer is formed in the third hole and the fourth hole.

30. The manufacturing method according to claim 18, wherein the first insulating layer is in direct contact with the side surface of the light-emitting diode.

31. The manufacturing method according to claim 18, wherein, The portion of the second insulating layer has an inverted dome shape.

32. The manufacturing method according to claim 18, wherein, The second insulating layer is formed of a negative photoresist material.

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