A semiconductor device integrating a MOSFET and a diode

Abstract

The application discloses a kind of integrated MOSFET and semiconductor device of diode, including substrate, the upper end of substrate is provided with drift layer, the upper end of drift layer is provided with support layer, the upper end of support layer is provided with conductive part, the right side of conductive part is provided with communicating part, the right side of communicating part is provided with electricity department.The application conducts voltage through two contact layers, even when one of the contact layers fails after long-term use, voltage can be conducted through the other contact layer, the ceramic conductive plate of conductive ceramic material not only plays a conductive effect, but also ensures good structural rigidity, when passing through strong voltage, it will not be punctured by high voltage, and it plays a protective effect, the lithium nickel manganese oxide inside the round plate is a high pressure-resistant material, when passing through high voltage, it will not damage the first conductive tube and the second conductive tube, prolonging the service life of the first conductive tube and the second conductive tube.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and in particular to a semiconductor device integrating a MOSFET and a diode. Background Technology

[0002] MOSFETs are field-effect transistors widely used in analog and digital circuits. Diodes are among the earliest semiconductor devices and have a wide range of applications. Especially in various electronic circuits, diodes are used in conjunction with resistors, capacitors, inductors, and other components to create circuits with different functions. Currently, semiconductor materials combining MOSFETs and diodes offer the advantage of high conductivity.

[0003] However, in order to enhance conductivity, it is generally made thinner. When the conductive material is made thin, it cannot withstand high voltage. When a high voltage is applied to the circuit, it will cause the entire semiconductor to be broken down by the high voltage, affecting the service life of the equipment. Summary of the Invention

[0004] (a) Technical problems to be solved

[0005] In view of the shortcomings of the prior art, the present invention provides a semiconductor device integrating MOSFET and diode, which solves the current problems.

[0006] (II) Technical Solution

[0007] The technical problem to be solved by this invention is...

[0008] To solve the above-mentioned technical problems, one technical solution adopted by the present invention is: to provide a semiconductor device integrating MOSFET and diode, including a substrate, a drift layer disposed at the upper end of the substrate, a support layer disposed at the upper end of the drift layer, a conductive portion disposed at the upper end of the support layer, a connecting portion disposed on the right side of the conductive portion, and a power output portion disposed on the right side of the connecting portion.

[0009] The connecting portion includes a first conductive plate and a second conductive plate, and a ceramic conductive plate is disposed between the first conductive plate and the second conductive plate.

[0010] The power output section includes a first conductive tube and a second conductive tube. A circular plate is disposed between the right end of the first conductive tube and the left end of the second conductive tube, and the interior of the circular plate is filled with a high-voltage resistant conductive block.

[0011] Through the above technical solution, the voltage is conducted through the conductive part into the first conductive plate and the second conductive plate. The ceramic conductive plate in the middle can play a connecting role, conducting the voltage into the first conductive tube and the second conductive tube.

[0012] The present invention is further configured such that: the conductive part includes a gate oxide layer, two grooves are formed on the upper surface of the gate oxide layer, a contact layer is disposed inside the grooves, and the contact layer is disposed at the upper end of the gate oxide layer through the grooves.

[0013] With the above technical solution, both contact layers on the gate oxide layer can achieve conductivity.

[0014] The present invention is further configured such that: a base plate is provided between the right end of the first conductive plate and the left end of the second conductive plate; a sliding groove is provided on the side of the first conductive plate and the second conductive plate; a sliding plate is provided on the side end of the base plate; and an end plate is provided on the upper end of the base plate.

[0015] Through the above technical solution, the base plate can be limited by the cooperation of the sliding plate and the sliding groove.

[0016] The present invention is further configured such that: a block is provided at the right end of the second conductive plate and the upper end of the drift layer, and a circular groove is provided inside the block, and the first conductive tube, the second conductive tube, and the circular plate are disposed inside the circular groove.

[0017] With the above technical solution, the first conductive tube, the second conductive tube, and the circular plate can all be placed in the circular groove for easy fixing.

[0018] The present invention is further configured such that the high-voltage resistant conductive block is made of lithium nickel manganese oxide.

[0019] Through the above technical solution, lithium nickel manganese oxide is a high-compression-resistant material.

[0020] The present invention is further configured such that the material of the ceramic conductive plate is conductive ceramic.

[0021] Through the above technical solutions, conductive ceramics can increase the rigidity of the structure and prevent it from being broken down by high voltage.

[0022] The present invention is further configured such that the diameters of the circular plate, the first conductive tube, and the second conductive tube are equal.

[0023] With the above technical solution, the circular plate, the first conductive tube, and the second conductive tube can be perfectly fitted into the circular groove.

[0024] (III) Beneficial Effects

[0025] The beneficial effects of this invention are as follows:

[0026] 1. This invention conducts voltage through two contact layers. Even if one contact layer fails after long-term use, voltage can still be conducted through the other contact layer, resulting in high conductivity.

[0027] 2. This invention achieves conductivity while maintaining good structural rigidity through a ceramic conductive plate made of conductive ceramic material;

[0028] 3. By filling the inside of the circular plate with lithium nickel manganese oxide, the first and second conductive tubes will not be damaged when high voltage is applied. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of a semiconductor device integrating MOSFETs and diodes;

[0030] Figure 2 This is a schematic diagram of the gate oxide layer in a semiconductor device integrating MOSFETs and diodes;

[0031] Figure 3 This is a schematic diagram of the structure of an end plate in a semiconductor device integrating MOSFETs and diodes;

[0032] Figure 4 This is a schematic diagram of a circular groove in a semiconductor device that integrates MOSFETs and diodes;

[0033] Figure 5 This is a schematic diagram of the structure of a high-voltage conductive block in a semiconductor device integrating MOSFETs and diodes.

[0034] The components are: 1. Substrate; 2. Drift layer; 3. Support layer; 4. Gate oxide layer; 5. Groove; 7. Contact layer; 9. First conductive plate; 10. Second conductive plate; 11. Slide groove; 12. Base plate; 13. Slide plate; 14. End plate; 15. Ceramic conductive plate; 16. Cube; 17. Circular groove; 18. First conductive tube; 19. Second conductive tube; 20. Circular plate; 21. High voltage resistant conductive block. Detailed Implementation

[0035] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby providing a clearer and more explicit definition of the scope of protection of the present invention.

[0036] Please see Figure 1-3 A semiconductor device integrating a MOSFET and a diode includes a substrate 1, a drift layer 2 disposed on the upper end of the substrate 1, a support layer 3 disposed on the upper end of the drift layer 2, a conductive portion disposed on the upper end of the support layer 3, a connecting portion disposed on the right side of the conductive portion, and a power output portion disposed on the right side of the connecting portion. The support layer 3 is used to support the upper conductive portion, the connecting portion has the effect of conducting electricity and introducing external voltage, and the connecting portion has the effect of connecting the conductive portion and the power output portion.

[0037] See Figure 2The conductive part includes a gate oxide layer 4. Two grooves 5 are formed on the upper surface of the gate oxide layer 4. A contact layer 7 is disposed inside the grooves 5. The contact layer 7 is disposed at the upper end of the gate oxide layer 4 through the grooves 5. The contact layer 7 can be placed inside the grooves 5 so that the contact layer 7 can be locked in the upper part of the gate oxide layer 4 through the grooves 5. The right end of the contact layer 7 can contact the right-side connecting part. Since two contact layers 7 are provided, the voltage can be conducted through the two contact layers 7 respectively. Even if one of the contact layers 7 fails after long-term use, the voltage can still be conducted through the other contact layer 7, resulting in high conductivity.

[0038] See Figure 3 The connecting part includes a first conductive plate 9 and a second conductive plate 10. A ceramic conductive plate 15 is disposed between the first conductive plate 9 and the second conductive plate 10. A base plate 12 is disposed between the right end of the first conductive plate 9 and the left end of the second conductive plate 10. Slide grooves 11 are formed on the sides of the first conductive plate 9 and the second conductive plate 10. A sliding plate 13 is disposed on the side end of the base plate 12. An end plate 14 is disposed on the upper end of the base plate 12. The ceramic conductive plate 15 is made of conductive ceramic. The base plate 12 plays a supporting role. The sliding plates 13 at both ends of the base plate 12 are aligned with the first conductive plate 9 and the second conductive plate 10. The base plate 12 can be inserted into the groove 11 on the surface of the base plate 12 and then locked between the first conductive plate 9 and the second conductive plate 10. Since end plates 14 are provided at both the front and rear ends of the base plate 12, the ceramic conductive plate 15 can be locked between the upper end of the base plate 12 and the inner side of the end plate 14 without shifting. Since the ceramic conductive plate 15 is made of conductive ceramic, it can achieve a highly efficient conductive effect. While achieving a conductive effect, the ceramic conductive plate 15 also ensures good structural rigidity. When subjected to a strong voltage, it will not be broken down by the high voltage, thus providing a protective effect.

[0039] See Figure 4 and 5The power output section includes a first conductive tube 18 and a second conductive tube 19. A circular plate 20 is disposed between the right end of the first conductive tube 18 and the left end of the second conductive tube 19. The interior of the circular plate 20 is filled with a high-voltage resistant conductive block 21, which is made of lithium nickel manganese oxide. A square block 16 is disposed at the right end of the second conductive plate 10 and the upper end of the drift layer 2. A circular groove 17 is formed inside the square block 16. The first conductive tube 18, the second conductive tube 19, and the circular plate 20 are disposed inside the circular groove 17. The diameters of the tubes 19 are equal. The connecting part guides the voltage sequentially into the first conductive tube 18, the circular plate 20, and the second conductive tube 19, and finally out from the second conductive tube 19. The circular groove 17 on the block 16 acts as a limit, locking the first conductive tube 18, the circular plate 20, and the second conductive tube 19 inside the circular groove 17. At the same time, the lithium nickel manganese oxide inside the circular plate 20 is a high pressure-resistant material. When high voltage is applied, the first conductive tube 18 and the second conductive tube 19 will not be damaged, thus extending the service life of the first conductive tube 18 and the second conductive tube 19.

[0040] In use, voltage can be conducted through the two contact layers 7. Even if one of the contact layers 7 fails after long-term use, voltage can still be conducted through the other contact layer 7, resulting in high conductivity. The ceramic conductive plate 15 is made of conductive ceramic, which provides efficient conductivity. While providing conductivity, the ceramic conductive plate 15 also ensures good structural rigidity. It will not be broken down by high voltage when subjected to strong voltage, thus providing protection. The lithium nickel manganese oxide inside the circular plate 20 is a high-pressure resistant material. When subjected to high voltage, it will not damage the first conductive tube 18 and the second conductive tube 19, thus extending the service life of the first conductive tube 18 and the second conductive tube 19.

[0041] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, whether direct or indirect, are not permitted.

Claims

1. A semiconductor device integrating a MOSFET and a diode, characterized in that: Includes a substrate (1), a drift layer (2) is provided at the upper end of the substrate (1), a support layer (3) is provided at the upper end of the drift layer (2), a conductive part is provided at the upper end of the support layer (3), a connecting part is provided on the right side of the conductive part, and an output part is provided on the right side of the connecting part. The connecting part includes a first conductive plate (9) and a second conductive plate (10), and a ceramic conductive plate (15) is disposed between the first conductive plate (9) and the second conductive plate (10); The power output section includes a first conductive tube (18) and a second conductive tube (19). A circular plate (20) is provided between the right end of the first conductive tube (18) and the left end of the second conductive tube (19). The interior of the circular plate (20) is filled with a high-voltage resistant conductive block (21). The conductive part includes a gate oxide layer (4), and two grooves (5) are formed on the upper surface of the gate oxide layer (4). A contact layer (7) is provided inside the grooves (5). The contact layer (7) is secured to the upper part of the gate oxide layer (4) through the groove (5), and the right end of the contact layer (7) is in contact with the right side of the connecting portion, thus two contact layers (7) are provided.

2. The semiconductor device integrating a MOSFET and a diode according to claim 1, characterized in that: A base plate (12) is provided between the right end of the first conductive plate (9) and the left end of the second conductive plate (10). A sliding groove (11) is provided on the side of the first conductive plate (9) and the second conductive plate (10). A sliding plate (13) is provided on the side of the base plate (12). An end plate (14) is provided on the upper end of the base plate (12).

3. A semiconductor device integrating a MOSFET and a diode according to claim 1, characterized in that: A block (16) is provided at the right end of the second conductive plate (10) and the upper end of the drift layer (2). A circular groove (17) is provided inside the block (16). The first conductive tube (18), the second conductive tube (19), and the circular plate (20) are provided inside the circular groove (17).

4. A semiconductor device integrating a MOSFET and a diode according to claim 1, characterized in that: The high-voltage resistant conductive block (21) is made of lithium nickel manganese oxide.

5. A semiconductor device integrating a MOSFET and a diode according to claim 1, characterized in that: The ceramic conductive plate (15) is made of conductive ceramic.

6. A semiconductor device integrating a MOSFET and a diode according to claim 1, characterized in that: The diameters of the circular plate (20), the first conductive tube (18), and the second conductive tube (19) are equal.

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