Method and system for depositing a layer

Abstract

Systems and related methods for depositing materials are described. The systems allow for condensing or depositing a precursor on a substrate, and then solidifying the condensed or deposited precursor to form a layer.

Description

Technical Field

[0001] This disclosure generally relates to systems and methods suitable for depositing layers on substrates. Background Technology

[0002] Vapor deposition processes are widely used in semiconductor device manufacturing. Various deposition processes require deposited materials. This is true, for example, in processes used to fill recesses, trenches, or gaps in a substrate. Other processes involving material deposition include the deposition of dielectric materials. However, depositing a variety of materials remains challenging, especially when trade-offs need to be struck between repeatability, layer quality, and processing speed. Therefore, improved methods and apparatus for material deposition remain in demand.

[0003] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure only to provide background for this disclosure. Such discussion should not be construed as an admission that any or all information was known at the time the invention was made or otherwise constitutes prior art. Summary of the Invention

[0004] This invention summary may present some concepts in a simplified form, which will be described in further detail below. This invention summary is not necessarily intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] This document describes a system comprising a reaction chamber, a precursor source, a gas injection system, and a curing unit. The reaction chamber includes a substrate support, which in turn includes a substrate cooling unit. The precursor source is arranged to introduce a precursor into the reaction chamber via a gas injection system fluidly connected to the reaction chamber. The precursor source includes a precursor source heater. The gas injection system heater is arranged to heat the gas injection system.

[0006] In some embodiments, the gas injection system includes a spray head injector. In such embodiments, the spray head injector includes a spray head injector heater.

[0007] In some embodiments, the curing unit includes a lower electrode and an upper electrode. The lower electrode is contained in a substrate support. The upper electrode is contained in a spray head injector. In such an embodiment, the system also includes a radio frequency (RF) power source arranged to generate an RF power waveform. The RF power source is electrically connected to one of the lower and upper electrodes.

[0008] In some embodiments, the curing unit includes an infrared source.

[0009] In some embodiments, the curing unit includes a UV source.

[0010] In some embodiments, the curing unit includes a microwave source.

[0011] In some embodiments, the curing unit includes a remote plasma source.

[0012] In some embodiments, one or more mesh panels are located between a remote plasma source and a substrate support.

[0013] In some embodiments, the system further includes a controller. The controller includes an airflow control unit, a precursor source temperature control unit, a gas injection system temperature control unit, a substrate support temperature control unit, and a curing unit control unit. The airflow control unit is arranged to control the flow of gas into the gas injection system. The precursor source temperature control unit is arranged to maintain the precursor source at a predetermined precursor source temperature. The gas injection system temperature control unit is arranged to maintain the gas injection system at a predetermined gas injection system temperature. The gas injection system temperature is higher than the precursor source temperature. The substrate support temperature control unit is arranged to maintain the substrate support at a predetermined substrate support temperature. The substrate support temperature is lower than the precursor source temperature. The curing unit control unit is arranged to control the operation, i.e., the function, of the curing unit.

[0014] In some embodiments, the system further includes a substrate heating unit. In some embodiments, the substrate heating unit is contained within a substrate support.

[0015] This document further describes a method for forming a layer on a substrate. The method includes the step of providing a system comprising a precursor source. The system also includes a gas injection system, a reaction chamber, and a curing unit. The precursor source includes a precursor. The reaction chamber includes a substrate support. The method further includes maintaining the precursor source at a precursor source temperature and maintaining the gas injection system at a gas injection system temperature. The gas injection system temperature is higher than the precursor source temperature. The method further includes maintaining the substrate support at a substrate support temperature. The substrate support temperature is lower than the precursor source temperature. The method further includes positioning the substrate on the substrate support. The method then includes providing the precursor to the reaction chamber. It should be understood that the precursor is provided from the precursor source and to the reaction chamber via the gas injection system. Therefore, the precursor is condensed or deposited on the substrate to form a condensed or deposited precursor. The method then includes curing the condensed or deposited precursor via the curing unit.

[0016] In some embodiments, the gas injection system includes a spray head injector. The spray head injector includes a spray head injector heater. In such embodiments, the method further includes maintaining the spray head injector at a spray head injector temperature via the spray head injector heater. It should be understood that the spray head injector temperature is higher than or equal to the gas injection system temperature.

[0017] In some embodiments, the curing unit includes a lower electrode and an upper electrode. The lower electrode is contained in a substrate support. The upper electrode is contained in a spray head injector. In such embodiments, the curing unit also includes a radio frequency (RF) power source arranged to generate an RF power waveform. The RF power source is electrically connected to one of the lower and upper electrodes. Furthermore, in such embodiments, the curing condensation or deposition of the precursor includes generating plasma between the upper and lower electrodes.

[0018] In some embodiments, the curing unit includes an infrared source. In such embodiments, curing a condensed or deposited precursor involves exposing the precursor to infrared radiation.

[0019] In some embodiments, the curing unit includes an ultraviolet radiation source. In such embodiments, curing condensed or deposited precursors involves exposing the precursors to ultraviolet radiation.

[0020] In some embodiments, the curing unit includes a remote plasma source. In such embodiments, curing a condensed or deposited precursor involves exposing the condensed or deposited precursor to one or more stimulated substances.

[0021] In some embodiments, the curing unit includes a remote plasma source, one or more stencils are located between the remote plasma source and a substrate support, and curing the condensed or deposited precursor includes exposing the precursor to free radicals.

[0022] In some embodiments, the precursor includes a boron precursor, and the solidification, condensation, or deposition of the precursor includes exposing the precursor to the reactants.

[0023] In some embodiments, the method includes performing multiple deposition cycles. A deposition cycle includes a precursor pulse and a curing pulse. The precursor pulse includes providing a precursor to the reaction chamber. The curing pulse includes curing the condensed or deposited precursor.

[0024] In some embodiments, the curing precursor further includes providing reactants to the reaction chamber.

[0025] This document further describes a method for forming a layer on a substrate. The method includes the step of providing a system comprising a first precursor source containing a first precursor, a second precursor source containing a second precursor, a gas injection system, a reaction chamber containing a substrate support, and a curing unit. The method further includes maintaining the first precursor source at a first precursor source temperature. The method further includes maintaining the second precursor source at a second precursor source temperature. The method further includes maintaining the gas injection system at a gas injection system temperature. The gas injection system temperature is higher than the first precursor source temperature. The gas injection system temperature is higher than the second precursor source temperature. The method further includes maintaining the substrate support at a substrate support temperature. The substrate support temperature is lower than the first precursor source temperature. The substrate support temperature is lower than the second precursor source temperature. The method further includes positioning the substrate on the substrate support. The method further includes performing one or more first cycles. The first cycle includes providing the first precursor from the first precursor source to the reaction chamber via the gas injection system. Therefore, the first precursor is condensed or deposited on the substrate to form a condensed or deposited first precursor. The first cycle further includes curing the condensed or deposited first precursor via the curing unit. The method further includes performing one or more second cycles. The second cycle involves supplying a second precursor from a second precursor source to the reaction chamber via a gas injection system. The second precursor is then condensed or deposited onto a substrate to form a condensed or deposited second precursor. The condensed or deposited second precursor is then cured by a curing unit.

[0026] In some embodiments, the method includes two or more superloops. A superloop includes executing one or more first loops and executing one or more second loops.

[0027] In some embodiments, the currently employed method is performed in the system described herein.

[0028] Referring to the accompanying drawings, these and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments. The invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0029] A more complete understanding of embodiments of this disclosure can be obtained by considering the following illustrative drawings, along with reference to the detailed description and claims.

[0030] Figure 1 An embodiment of the system 100 disclosed herein is shown.

[0031] Figure 2 Another embodiment of the system 200 disclosed herein is shown.

[0032] Figure 3 Another embodiment of the system 300 disclosed herein is shown.

[0033] Figure 4 An embodiment of a method for forming a layer on a substrate as described herein is shown.

[0034] Figure 5 Another embodiment of the method for forming a layer on a substrate as described herein is shown.

[0035] Figure 6 An embodiment of a controller 600 used in a system as described herein is shown.

[0036] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be enlarged relative to other elements to aid in understanding the embodiments illustrated in this disclosure. Detailed Implementation

[0037] The following description of exemplary embodiments of methods, structures, devices, and systems is merely illustrative and for purposes of explanation only; the following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having the described features is not intended to exclude other embodiments having additional features or other embodiments comprising different combinations of the described features. For example, various embodiments are set forth as exemplary embodiments and may be stated in the dependent claims. Unless otherwise stated, exemplary embodiments or their components may be combined or applied separately from each other.

[0038] This article describes, for example, methods and related systems that can be used to deposit materials in a repeatable manner.

[0039] In some embodiments, "gas" may include materials that are gaseous at ambient temperature and pressure (NTP), evaporated solids, and / or evaporated liquids, and may consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases, i.e., gases introduced without passing through gas distribution components, other gas distribution devices, etc., may be used, for example, to seal the reaction space, and may include sealing gases, such as inert gases. In some cases, the term "precursor" may refer to a compound that participates in a chemical reaction to produce another compound, particularly compounds constituting the membrane matrix or membrane backbone; the term "reactant" may be used interchangeably with the term "precursor." Alternatively, "reactant" may refer to a compound that reacts with the substrate surface to form volatile reaction products. Therefore, "reactant" can be used in deposition processes or etching processes, or both.

[0040] In some embodiments, "substrate" can refer to any one or more underlying materials that can be used to form or on which devices, circuits, or films can be formed. The substrate may include bulk materials such as silicon (e.g., single-crystal silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and may include one or more layers on or under the bulk material. Furthermore, the substrate may include various features such as recesses, protrusions, etc., formed within or on at least a portion of the substrate layers. For example, the substrate may include a bulk semiconductor material and an insulating or dielectric material layer on at least a portion of the bulk semiconductor material. Exemplary substrates include wafers such as silicon wafers, for example, 200mm wafers, 300mm wafers, or 450mm wafers.

[0041] In some embodiments, "film" and / or "layer" can refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, films and / or layers can include two-dimensional materials, three-dimensional materials, nanoparticles, or even partially or entirely molecular layers or partially or entirely atomic layers or atomic and / or molecular clusters, or layers composed of isolated atoms and / or molecules. Films or layers can include materials or layers with pinholes, which may or may not be continuous.

[0042] In some embodiments, "cyclic deposition process" or "cyclic deposition process" may refer to the sequential introduction of precursors (and / or reactants) into a reaction chamber to deposit a layer on a substrate, and includes processing techniques such as atomic layer deposition (ALD), cyclic chemical vapor deposition (cyclic CVD), and hybrid cyclic deposition processes that include ALD components and cyclic CVD components.

[0043] In some embodiments, “atomic layer deposition” (ALD) can refer to a vapor deposition process in which deposition cycles (typically multiple consecutive deposition cycles) are performed in a processing chamber. The term atomic layer deposition as used herein also means processes specified by related terms, such as chemical vapor deposition, atomic layer epitaxy, molecular beam epitaxy (MBE), gas-source MBE, organometallic MBE, and chemical beam epitaxy, when performed with alternating pulses of precursor / reactive gases and purge gases (e.g., inert carrier gases).

[0044] The term "dew point" as used herein refers to the temperature at which the precursor condenses, i.e., the temperature at which the precursor changes from the gaseous phase to the liquid phase. Those skilled in the art understand that the dew point of a precursor depends on pressure. Therefore, it should be understood that the term "dew point" as used herein refers to the dew point of the precursor under the pressure within the reaction chamber.

[0045] Furthermore, in this disclosure, any two numbers of a variable can constitute a feasible range of that variable, and any range indicated may include or exclude endpoints. Additionally, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value, and includes equivalents, and may refer to the mean, median, representativeness, majority, etc. Furthermore, in this disclosure, the term “comprising” indicates that the embodiment it refers to includes those features, but it does not exclude the presence of other features, provided they do not render the corresponding embodiment infeasible. On the other hand, “consisting of…” indicates that, apart from the features following the phrase, no other features exist in the embodiments in question, except for optional features that do not materially affect the essential features of the corresponding embodiment. It should be understood that the term “comprising” includes the meaning of the term “consisting of…”.

[0046] This article describes a system for depositing layers. The system includes a reaction chamber containing a substrate support, a substrate cooling unit, a precursor source, a precursor source heater, a gas injection system, a gas injection system heater, and a curing unit.

[0047] The reaction chamber includes a substrate support. The substrate support appropriately provides mechanical support to the substrate during the deposition process. Suitable substrates include semiconductor wafers, such as silicon wafers, like p-type silicon wafers. The substrate can have any size. An exemplary substrate is circular and has a diameter of 200 mm, 300 mm, or 450 mm.

[0048] The substrate support includes a substrate cooling unit. During normal operation, the substrate can be brought to the desired processing temperature by heated process gases and / or heat from the gas injection system and / or precursor source. Therefore, a substrate heater is not strictly necessary. However, in some embodiments, the substrate support also includes a substrate heater. This allows the substrate to be rapidly heated to the desired processing temperature. Once the substrate is at this processing temperature, a substrate cooler can be used to ensure that the substrate temperature does not exceed the desired processing temperature.

[0049] Suitable substrate coolers include a variety of heat exchangers known in the art. For example, a substrate cooler may include tortuous conduits containing cooling fluid contained within a substrate support. Alternatively or alternatively, a substrate cooler may include an interconnected network of cooling conduits contained within a substrate support. Alternatively or alternatively, a substrate cooler may include a Peltier cooling element.

[0050] In some embodiments, the system is configured to maintain the substrate at a temperature of at least -75°C to at most 600°C, or at least 0°C to at most 400°C, or at least 25°C to at most 200°C, or at least 50°C to at most 100°C.

[0051] A precursor source arrangement is used to provide the precursor and optionally a carrier gas. A gas injection system is fluidly connected to the precursor source and the reaction chamber. The gas injection system arrangement is used to supply the precursor and optionally the carrier gas from the precursor source to the reaction chamber. The precursor source includes a precursor source heater, which can be suitably arranged during normal use to maintain the precursor source at a predetermined temperature, i.e., a predetermined precursor source temperature.

[0052] As previously described, the gas injection system arrangement is used to supply precursors and, optionally, carrier gases from a precursor source to the reaction chamber. The gas injection system includes a gas injection system heater. The gas injection system heater arrangement is used to heat the gas injection system.

[0053] In some embodiments, a suitable gas injection system includes one or more pipes and / or gas manifolds. The gas injection system may include, for example, an insulating heating jacket surrounding one or more pipes and / or gas manifolds. The heating jacket may include, for example, a resistance heater and / or pipes containing a heating fluid.

[0054] In some embodiments, the gas injection system includes one or more heated gas lines. In some embodiments, the heated gas lines are heated to a temperature lower than the temperature of the spray head injector included in the system and higher than the temperature of the substrate support. In some embodiments, the heated gas lines are heated to a temperature higher than the temperature of the precursor source included in the system. In some embodiments, the heated gas lines are heated to a temperature of at least 50°C to at most 1000°C, or at least 100°C to at most 600°C, or at least 150°C to at most 400°C, such as 200°C. The heated gas lines may be heated, for example, by a heating mantle, such as a resistance-heated mantle.

[0055] In some embodiments, the gas injection system includes a spray head injector. The spray head injector may be suitably arranged parallel to the substrate support. The spray head injector includes a spray head injector heater. In some embodiments, the spray head injector heater includes a plurality of conduits containing heated fluid. Alternatively or additionally, in some embodiments, the spray head injector heater may include a resistance heater.

[0056] The system also includes a curing unit. The curing unit can be advantageously used to cure and / or deposit precursors on dense substrates. Various types of curing units can be used.

[0057] In some embodiments, the curing unit includes a lower electrode, an upper electrode, and an RF power source. The lower electrode may be suitably contained within a substrate support. As described above, the upper electrode may be suitably located within a spray head injector. Alternatively, a spray head injector or a portion thereof may be used as the upper electrode. The RF power source is arranged to generate an RF power waveform and is electrically connected to one of the lower and upper electrodes. It should be understood that electrodes not electrically connected to the RF power source are electrically grounded via grounding. Therefore, in some embodiments, the lower electrode is grounded, and the RF power source is electrically connected to the upper electrode. Alternatively, the lower electrode may be electrically connected to the RF power source, and the upper electrode may be grounded.

[0058] In some embodiments, the curing unit includes an infrared source. The infrared source may, for example, include an infrared lamp disposed outside the reaction chamber, which is within the line of sight of the substrate through a window in the reaction chamber wall. It should be understood that the window is at least partially transparent to infrared light. Suitably, the window may be heated, for example, by resistance heating. Alternatively, the window may be heated by the infrared source. Heating the window can advantageously prevent the precursor from condensing on the window.

[0059] In some embodiments, the curing unit includes a UV source, i.e., an ultraviolet source. The UV source may, for example, include an ultraviolet lamp disposed outside the reaction chamber, which is within the line of sight of the substrate through a window in the reaction chamber wall. It should be understood that the window is at least partially transparent to ultraviolet light. Suitably, the window may be heated, for example, by resistance heating. Alternatively, the window may be heated by the UV source. Heating the window can advantageously prevent precursors from condensing on the window.

[0060] In some embodiments, the curing unit includes a remote plasma source. The remote plasma source may include, for example, any of a microwave plasma source, a capacitively coupled plasma source, and an inductively coupled plasma source. Suitably, the remote plasma source may be located outside the reaction chamber. Alternatively, the remote plasma source may be located inside the reaction chamber. Optionally, one or more stencils are located between the remote plasma source and the substrate support.

[0061] In some embodiments, the curing unit includes a microwave source. Therefore, in some embodiments, the method described herein may include curing condensed or deposited precursors by means of a microwave source. The microwave source may be located, for example, inside or outside the reaction chamber. It should be understood that when the microwave source is located outside the reaction chamber, the microwave source is suitably connected to the reaction chamber via a microwave conduit.

[0062] In some embodiments, the system further includes an exhaust device for removing unused reactants and / or reaction products from the reaction chamber. The exhaust device may be suitably fluidly connected to a gas venting device, such as a pump, for example a turbopump, and / or a cold trap. The gas venting device may or may not be included in the system described herein.

[0063] In some embodiments, the system further includes a wall heater. Therefore, the walls of the reaction chamber can be heated, and the adhesion coefficient of the gas on the reactor wall can be controlled, preventing or reducing the deposition or condensation of precursors on the reaction chamber walls. Any chamber wall heater can be used, including but not limited to wall heaters comprising one or more resistance heating elements or wall heaters comprising one or more pipes containing heating fluid. In some embodiments, the walls of the reaction chamber can be heated to a temperature of at least 50°C to at most 1000°C, or at least 100°C to at most 800°C, or at least 400°C to at most 700°C, such as 600°C, or 500°C. Therefore, the temperature of the reaction chamber walls can be effectively controlled, and thus, the adhesion coefficient of the gases used in the reaction chamber, such as precursors or reactants, can also be controlled.

[0064] In some embodiments, the reaction chamber is insulated, for example, by means of double-wall insulation. Reaction chamber insulation can advantageously improve temperature control within the reaction chamber. Additionally or alternatively, reaction chamber insulation can reduce heat loss to the environment. In some embodiments, the outer surface of the reaction chamber can be cooled by a cooling jacket, for example, by a cooling jacket containing water.

[0065] In some embodiments, the system described herein may further include a loading lock and / or a wafer handling system. Thus, when a wafer, such as a semiconductor wafer like a silicon wafer, is used as a substrate, the substrate can be efficiently and optionally automatically moved from the loading station, i.e., the loading lock, to the reaction chamber.

[0066] In some embodiments, the system further includes an outer shell surrounding the reaction chamber. The outer shell may include, for example, a heat-resistant material, such as steel.

[0067] In some embodiments, the system further includes a controller comprising an airflow control unit, a precursor source temperature control unit, a gas injection system temperature control unit, a substrate support temperature control unit, and a curing unit control unit, arranged to control the operation of the curing unit. The airflow control unit is arranged to control gas flow into the gas injection system. The precursor source temperature control unit is arranged to maintain the precursor source at a predetermined precursor source temperature. The gas injection temperature control unit is arranged to maintain the gas injection system at a predetermined injection system temperature. The gas injection system temperature is higher than the precursor source temperature. The substrate support temperature control unit is arranged to maintain the substrate support at a predetermined substrate support temperature. The substrate support temperature is lower than the precursor source temperature. The curing unit control unit may suitably control a switching mechanism for shutting down the curing unit during the step of depositing or condensing the precursor on the substrate, and for turning on the curing unit during the curing step.

[0068] In some embodiments, under pressure within the reaction chamber, the substrate support temperature is below the dew point of the precursor. Therefore, a liquid precursor phase can be formed on the substrate support. The formation of the liquid phase is particularly advantageous for filling narrow gaps or grooves.

[0069] In some embodiments, the substrate support is at a pressure above the dew point of the precursor in the reaction chamber, or the reaction chamber is at a pressure in which no liquid precursor phase is formed, such as at a very low pressure. In such embodiments, the precursor can be formed into a solid phase on a substrate located on a cooled substrate support. This solid phase can then be solidified as described elsewhere herein.

[0070] The controller may include modules, such as software or hardware components like FPGAs or ASICs, that perform specific tasks. It should be understood that when the controller includes software components that perform specific tasks, the controller is programmed to perform that specific task. Modules may advantageously be configured to reside on the controller's addressable storage medium, i.e., memory, and may be configured to control, for example, any specific function of the system.

[0071] This document further describes a method for depositing a layer on a substrate. The method includes a supply system, such as the system described herein. The system includes a precursor source. The precursor source includes a precursor. The system also includes a gas injection system, a reaction chamber, and a curing unit. The reaction chamber includes a substrate support. The method further includes maintaining the precursor source at a predetermined precursor source temperature, maintaining the gas injection system at a predetermined gas injection system temperature, and maintaining the substrate support at a predetermined substrate support temperature. The gas injection system temperature is higher than the predetermined source temperature, and the substrate support temperature is lower than the predetermined precursor source temperature. The method also includes positioning the substrate on the substrate support. The method further includes supplying the precursor from the precursor source to the reaction chamber via the gas injection system. Optionally, the precursor is introduced into the reaction chamber via a carrier gas. Depending on the precursor discussed and depending on the pressure in the reaction chamber, the precursor is condensed or deposited on the substrate. The condensed or deposited precursor is then cured. Advantageously, the methods described herein can allow the deposition of very thin layers. Furthermore, they can allow precise control of the layer thickness.

[0072] In some embodiments, the step of condensing or depositing the precursor on the substrate includes closing the inlet valve included in the gas injection system and the outlet valve included in the exhaust device of the reaction chamber. Thus, the precursor introduced into the reaction chamber can be given a certain amount of time, for example from at least 0.1 seconds to at most 20 seconds, to condense or deposit on the substrate without the precursor flowing into and out of the reaction chamber, thereby minimizing precursor consumption.

[0073] In some embodiments, the method includes maintaining the reaction chamber at a predetermined reaction chamber pressure.

[0074] In some embodiments, the reaction chamber pressure is high enough and the substrate support temperature is low enough to allow the precursor to form a condensed liquid phase on the substrate. Those skilled in the art will understand that the exact temperature and pressure at which these conditions occur depend on the precursor used and are readily determined in practice. Thus, in some embodiments, the dew point of the precursor at the reaction chamber pressure is below the precursor source temperature and above the substrate support temperature. Therefore, the precursor condenses on the substrate to form a condensed precursor. The condensed precursor is a liquid.

[0075] In some embodiments, the reaction chamber pressure is low enough and the substrate support temperature is high enough to cause the precursor to transition directly from the gas phase to the solid phase. In such embodiments, the precursor is deposited on the substrate to form a deposited precursor. The deposited precursor is a solid. Those skilled in the art will understand that the exact temperature and pressure at which these conditions occur depend on the precursor used and are readily determined in practice.

[0076] In some embodiments, the substrate support temperature is at least -20°C to at most 40°C, the precursor source temperature is at least 10°C to at most 100°C, and the gas injection system temperature is at least 30°C to at most 150°C, provided that the substrate support temperature is lower than the precursor source temperature and the precursor source temperature is lower than the gas injection system temperature.

[0077] In some embodiments, the substrate support temperature is at least 1°C lower than the precursor source temperature. In some embodiments, the substrate support temperature is at least 2°C lower than the precursor source temperature. In some embodiments, the substrate support temperature is at least 5°C lower than the precursor source temperature. In some embodiments, the substrate support temperature is at least 10°C lower than the precursor source temperature. In some embodiments, the substrate support temperature is at least 20°C lower than the precursor source temperature. In some embodiments, the substrate support temperature is at least 50°C lower than the precursor source temperature.

[0078] In some embodiments, the precursor source temperature is at least 1°C lower than the gas injection system temperature. In some embodiments, the precursor source temperature is at least 2°C lower than the gas injection system temperature. In some embodiments, the precursor source temperature is at least 5°C lower than the gas injection system temperature. In some embodiments, the precursor source temperature is at least 10°C lower than the gas injection system temperature. In some embodiments, the precursor source temperature is at least 20°C lower than the gas injection system temperature. In some embodiments, the precursor source temperature is at least 50°C lower than the gas injection system temperature.

[0079] In some embodiments, the temperature of the gas injection system increases continuously from the precursor source to the reaction chamber. In other words, a temperature gradient may exist within the gas injection system. It should be understood that in such embodiments, the term "gas injection system temperature" refers to the temperature range from the lowest temperature in the gas injection system to the highest temperature in the gas injection system.

[0080] In some embodiments, the method employs a system in which the gas injection system includes a spray head injector. In some embodiments, the spray head injector may be arranged substantially parallel to the substrate support. The spray head injector includes a spray head injector heater. In such embodiments, the method further includes maintaining the spray head injector at a spray head injector temperature by the spray head injector heater. The spray head injector heater can maintain the spray head injector at a temperature that may be higher than or equal to the gas injection system temperature. In some embodiments, the gas injection system temperature gradually increases from a precursor source temperature near the precursor source to a spray head injector temperature near the spray head injector.

[0081] In some embodiments, the curing unit includes a lower electrode and an upper electrode. The lower electrode is contained in a substrate support. The upper electrode is contained in a spray head injector. In such embodiments, the curing unit also includes a radio frequency (RF) power source arranged to generate an RF power waveform. The RF power source is electrically connected to one of the lower and upper electrodes. It should be understood that electrodes not electrically connected to the RF power source are electrically grounded. In such embodiments, the curing of the condensed or deposited precursor includes generating plasma, i.e., capacitively coupled plasma, between the upper and lower electrodes.

[0082] In some embodiments, the plasma is continuously generated in the reaction chamber. Alternatively, the plasma can be a pulsed plasma, comprising a series of plasma on-off and plasma-off pulses. In other words, the plasma can be an intermittent plasma.

[0083] It should be understood that generating plasma in a reaction chamber involves supplying plasma gas to the reaction chamber. Suitable plasma gases include nitrogen, hydrogen, rare gases such as He, Ne, and Ar, and mixtures thereof.

[0084] In some embodiments, the curing unit includes an infrared source. In such embodiments, curing a condensed or deposited precursor involves exposing the precursor to infrared radiation.

[0085] In some embodiments, the curing unit includes an ultraviolet (UV) radiation source. In such embodiments, curing condensed or deposited precursors involves exposing the precursors to ultraviolet radiation.

[0086] In some embodiments, during exposure to infrared or ultraviolet radiation, the substrate is exposed to a curing environment, in other words, to a curing gas. Suitable curing environments include nitrogen, hydrogen, rare gases such as He, Ne, and Ar, and mixtures thereof.

[0087] In some embodiments, the curing unit includes a remote plasma source. In such embodiments, the curing condensation or deposition of the precursor may include exposing the precursor to one or more stimulated substances. Examples of stimulated substances include electromagnetic radiation, ions, and free radicals.

[0088] In some embodiments, the curing unit includes a remote plasma source, and one or more stencils are located between the remote plasma source and a substrate support. In such embodiments, electromagnetic radiation and ions can be advantageously at least partially blocked by the one or more stencils, while free radicals can pass through relatively unimpeded. Therefore, in such embodiments, curing the condensed or deposited precursor involves exposing the precursor to free radicals.

[0089] Remote plasma can be generated using any suitable plasma gas. Suitable plasma gases include nitrogen, hydrogen, rare gases such as He, Ne, and Ar, and mixtures thereof.

[0090] In some embodiments, the curing unit includes a microwave source. In such embodiments, curing a condensed or deposited precursor may include exposing the condensed or deposited precursor to microwave energy.

[0091] In some embodiments, the precursor includes a boron precursor. Therefore, a boron-containing layer can be formed on the substrate.

[0092] In some embodiments, the boron precursor includes boron and nitrogen. In some embodiments, the boron precursor includes boron, nitrogen, and hydrogen.

[0093] In some embodiments, the precursor may be represented by a chemical formula according to formula (i):

[0094]

[0095] R1, R2, R3, R4, R5 and R6 are independently selected from H, NH2, alkyl groups and halogens.

[0096] In some embodiments, at least one of R1, R2, R3, R4, R5 and R6 is F or Cl.

[0097] In some embodiments, the precursor is a cycloborazane.

[0098] In some embodiments, the precursor includes a boron precursor, and curing the precursor involves exposing the condensed or deposited precursor to the reactant. In some embodiments, the reactant comprises nitrogen. Alternatively or additionally, the reactant may comprise an inert gas. Exposing the condensed or deposited precursor to the reactant can advantageously be performed simultaneously with exposing the substrate to direct plasma, exposing the substrate to a reactive substance, exposing the substrate to free radicals, exposing the substrate to ultraviolet (UV) radiation, and / or exposing the substrate to infrared (IR) radiation.

[0099] In some embodiments, the boron precursor comprises boron halide. For example, the boron precursor may be selected from boron chloride, boron bromide, and boron iodide.

[0100] In some embodiments, the boron precursor comprises boron hydride. Suitable borohydrides include diborane and decaborane.

[0101] In some embodiments, the boron precursor comprises an organoboron, i.e., a compound containing boron, carbon, and hydrogen. Suitable organoboron compounds include triethylborane.

[0102] In some embodiments, the boron precursor comprises an alkylaminoborane. Suitable alkylaminoboranes include tris(methylamino)borane.

[0103] In some embodiments, the boron precursor includes ammoniaborane (NH3·BH3).

[0104] In some embodiments, the precursor includes a boron precursor and a silicon precursor. Therefore, in some embodiments, both the boron precursor and the silicon precursor are condensed or deposited on the substrate. In some embodiments, the silicon precursor includes silicon halide. In some embodiments, the silicon halide includes silicon, hydrogen, and fluorine. In some embodiments, the silicon halide includes silicon, hydrogen, and chlorine. In some embodiments, the silicon halide includes silicon, hydrogen, and bromine. In some embodiments, the silicon halide includes silicon, hydrogen, and iodine. In some embodiments, the silicon halide is selected from tetrachlorosilane, diiodosilane, and tetraiodosilane. Therefore, a layer comprising silicon and boron can be formed on the substrate.

[0105] In some embodiments, the precursor comprises a boron precursor and a silicon precursor, and the boron precursor comprises boron and nitrogen. For example, the precursor may contain cycloborane or alkyl-substituted derivatives thereof. In such embodiments, a silicon-doped boron nitride layer can be formed on the substrate by first depositing or condensing the silicon precursor and the boron precursor on the substrate, and then curing the silicon precursor and the boron precursor.

[0106] In some embodiments, the precursors include a boron precursor and a silicon precursor, the boron precursor comprising boron and a halide, the silicon precursor comprising silicon and a halide, and the curing step comprising generating a nitrogen-containing plasma in a reaction chamber. Thus, a silicon-doped boron nitride layer can be formed on the substrate. In an exemplary embodiment, the boron precursor comprises BBr3, the silicon precursor comprises SiI2H2, and generating a direct nitrogen-containing plasma in the reaction chamber comprises supplying N2 and optionally H2 to the reaction chamber.

[0107] In some embodiments, curing the condensed or deposited precursor via the curing unit includes providing reactants to the reaction chamber. In some embodiments, the reactants comprise silicon. In some embodiments, the reactants comprise silicon halides, such as at least one of silicon- and fluorine-containing compounds, silicon- and chlorine-containing compounds, and silicon- and bromine-containing compounds. In some embodiments, the silicon halides are selected from tetrachlorosilane and tetraiodosilane. In some embodiments, the silicon halides comprise compounds selected from SiH3Cl, SiH2Cl2, SiH3Cl, and SiCl4. In some embodiments, the silicon halides comprise compounds selected from SiBr4, SiHBr3, SiH2Br2, SiH3Br, and SiBr4. In some embodiments, the silicon halides comprise compounds selected from SiH3I, SiH2I2, SiH3I, and SiI4. Therefore, a silicon-containing layer, such as a silicon-doped boron nitride layer, can be formed on the substrate.

[0108] In some embodiments, the method described herein includes multiple deposition cycles. A deposition cycle includes a precursor pulse and a curing pulse. The precursor pulse includes providing a precursor to the reaction chamber as described herein. The curing pulse includes curing the condensed or deposited precursor as described herein. Optionally, the precursor pulse and curing pulse are separated by intra-cycle purging. Additionally or alternatively, in some embodiments, subsequent deposition cycles may be separated by inter-cycle purging.

[0109] In some embodiments, the method includes heating the reaction chamber wall using a reaction chamber wall heater. This allows control of the adhesion coefficient of the gas on the reactor wall and avoids or reduces the deposition or condensation of precursors on the reaction chamber wall. Any wall heater can be used, including but not limited to wall heaters comprising one or more resistance heating elements or wall heaters comprising one or more pipes containing heating fluid.

[0110] In some embodiments, the reaction chamber is maintained at at least 1.10. -11 Pressure from millibars to at most 1 bar, or at least 1.10 bar. -10 Millibars to a maximum of 1.10 -1 The pressure on the bar, or at least 1.10. -9 Pressure from millibars to at most 1 millibar, or at least 1.10. -8 Millibars to a maximum of 1.10 -2 A pressure of millibars, or at least 1.10. -7 Millibars to a maximum of 1.10 -4 Millibar pressure.

[0111] Figure 1An embodiment of the system 100 disclosed herein is shown. System 100 can be used in certain embodiments of the methods described herein. System 100 includes a reaction chamber 120. The reaction chamber 120 includes a lower conductive plate electrode 122 and an upper conductive plate electrode 121. The lower plate electrode 121 suitably serves as a substrate support. The upper conductive plate electrode 121 can suitably serve as a gas injector, i.e., as a spray head injector, for supplying one or more reaction gases, such as precursors and / or reactants, to the reaction chamber 120. One or more reaction gases can be supplied to the upper conductive plate electrode 121 from one or more precursor sources, such as a first precursor source 112, through one or more gas lines, such as a first gas line 111. Unused reaction gases, carrier gases, reaction products, etc., can be removed from the reaction chamber 120 through an exhaust device 124. Optionally, system 110 includes one or more additional gas inlets 126 for supplying additional gases to the reaction chamber 120.

[0112] The lower conductive plate electrode 122, used as a substrate support, includes a cooling element and a heating element. The upper conductive plate electrode 121, used as a spray head injector, includes a spray head heating element. The precursor source 112 includes a first gas source heating element, and a first gas line 111 is provided with a first gas line heating element. For clarity, the various heating elements are not shown in the image. Figure 1 As shown in the diagram. Therefore, a temperature distribution can be maintained within system 100. Specifically, the upper conductive plate electrode 121 can be maintained at a higher temperature than the first gas line 111, the first gas line 111 can be maintained at a higher temperature than the first precursor source 112, and the lower conductive plate electrode 122 can be maintained at a lower temperature than the first precursor source 112. Therefore, the precursor can be effectively deposited or condensed on the substrate located on the lower conductive plate electrode 122, while avoiding or at least minimizing precursor condensation or deposition in the first gas line 111 and on the upper conductive plate electrode 121.

[0113] A reaction zone 123 is disposed within a reaction chamber 120, specifically between the lower plate electrode 122 and the upper conductive plate electrode 121. Reactive materials can be formed in the reaction zone 123 via plasma. The plasma can be generated by operably connecting an RF power source 131 (i.e., a power source that generates electrical power in the form of alternating current at frequencies in the radio frequency (RF) range) to the upper plate electrode 121 and grounding the lower plate electrode 122 via an electrical ground 133.

[0114] Alternatively (not shown in the embodiments), plasma can be generated in the reaction zone by operably connecting an RF power source to the lower plate electrode and grounding the upper plate electrode by electrical grounding.

[0115] System 100 also includes a controller (not shown) that may include electronic circuitry and software to selectively operate RF power sources, valves, manifolds, heaters, pumps, and other components included in system 100. Such circuitry and components are used to introduce precursors, reactants, and / or purge gases from their respective sources. In some embodiments, the controller may control the timing of gas pulse sequences, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to provide proper operation of system 100. The controller may include modules, such as software or hardware components like FPGAs or ASICs, that perform specific tasks. Modules may be advantageously configured to reside on an addressable storage medium of the controller and configured to perform one or more processes. Various configurations of the system are possible, including various numbers and types of precursor sources, plasma gas sources, and purge gas sources.

[0116] Figure 2 Another embodiment of the system 200 disclosed herein is shown. System 200 can be used in some embodiments of the methods described herein. System 200 includes a reaction chamber 220. The reaction chamber 220 includes a substrate support 222 and a gas injector 221 for supplying one or more reaction gases, such as precursors and / or reactants, to the reaction chamber 220. Suitable injectors include spray head injectors, nozzles, spray guns, etc. One or more reaction gases can be supplied to the injector 222 from one or more precursor sources, such as a first precursor source 212, through one or more gas lines, such as a first gas line 211. Unused reaction gases, carrier gases, reaction products, etc., can be removed from the reaction chamber 220 through an exhaust device 224. Optionally, system 200 includes one or more additional gas inlets 226 for supplying additional gases to the reaction chamber 220.

[0117] The substrate support 222 includes cooling elements and heating elements. The precursor source 212 includes a first gas source heating element, and a first gas line 211 is provided with a first gas line heating element. For clarity, the various heating elements are not shown in the image. Figure 1 As shown in the diagram. Therefore, a temperature distribution can be maintained within system 200. Specifically, syringe 221 can be maintained at a higher temperature than the first gas line 211, the first gas line 211 can be maintained at a higher temperature than the first precursor source 212, and substrate support 222 can be maintained at a lower temperature than the first precursor source 212. Therefore, the precursor can be effectively deposited or condensed on the substrate located on substrate support 222, while avoiding or at least minimizing precursor condensation or deposition in the first gas line 211 and on syringe 221.

[0118] System 200 also includes a radiation source 240 operatively coupled to reaction chamber 220. Suitable radiation sources 240 include ultraviolet lamps and infrared lamps, and are therefore known in the art. Radiation source 240 may be separated from reaction chamber 220 by a transparent window 241. It should be understood that window 241 only needs to be at least partially transparent to the radiation produced by radiation source 240, and opaque to other types of radiation. Optionally, window 241 is heated. Providing a heated window 241 can suitably avoid or reduce precursor deposition or condensation on window 241, thereby avoiding the need for, for example, particulate problems or frequent preventative maintenance.

[0119] System 200 also includes a controller (not shown) that may include electronic circuitry and software to selectively operate radiation source 240, valves, manifolds, heaters, pumps, and other components included in system 200. Such circuitry and components are used to introduce precursors, reactants, and / or purge gases from their respective sources. In some embodiments, the controller may control the timing of gas pulse sequences, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to provide proper operation of system 200. The controller may include modules, such as software or hardware components like FPGAs or ASICs, that perform specific tasks. Modules may be advantageously configured to reside on addressable storage media of the controller and configured to perform one or more processes. Various configurations of the system are possible, including various numbers and types of precursor sources, plasma gas sources, and purge gas sources.

[0120] Figure 3 Another embodiment of the system 300 disclosed herein is shown. System 300 can be used in some embodiments of the methods described herein. System 300 is similar to... Figure 2 System 200; and Figure 3 The system 300 includes a reaction chamber 320 comprising a substrate support 322 and a gas injector 321, a first precursor source 312, a first gas line 311, an exhaust device 324, a controller, and optionally one or more additional gas inlets 326. Instead of a radiation source, Figure 3System 300 includes a remote plasma source 340 operatively coupled to reaction chamber 320. Suitable remote plasma sources 340 are therefore known in the art and include inductively coupled plasma sources, microwave plasma sources, and capacitive plasma sources. The remote plasma source may be located near the reaction chamber, or it may be located at a distance from the reaction chamber, for example, at least 1.0 m to at most 10.0 m. When the remote plasma source 340 is located at a distance from reaction chamber 320, the remote plasma source 340 can be operatively connected to reaction chamber 320 via active material conduit 341. The active material conduit may include a pipe. Optionally, the pipe may include one or more mesh plates. The mesh plates may at least partially block some reactive substances, such as ions and electromagnetic radiation, while allowing other reactive substances, such as free radicals, to pass through.

[0121] It should be understood that, according to Figures 1 to 3 Any of these systems may include additional precursor and reactant sources. Some or all of these additional precursor and reactant sources may be maintained at a temperature higher than the substrate support temperature and lower than the gas injection system temperature, for example, lower than the temperature of the gas line and / or injector.

[0122] Figure 4 An embodiment of a method for forming a layer on a substrate as described herein is illustrated. The method employs a system as described herein and includes positioning the substrate on a substrate support 411. The method then includes cyclically performing one or more cycles 415, such as multiple cycles, for example 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000 or more cycles. The cycles include the following steps in sequence: step 412 of condensing or depositing a precursor on the substrate and step 413 of curing the precursor. Optionally, step 412 of condensing or depositing the precursor on the substrate and step 413 of curing the precursor may be separated by intra-cycle purging 416. Alternatively or additionally, in some embodiments, subsequent cycles may be separated by inter-cycle purging 417. This cyclic deposition process results in the deposition of material, i.e., a layer, on the substrate. The amount of material deposited on the substrate depends on the amount of cycle 415 performed. After a suitable amount of material has been deposited, the method terminates 414. During at least the step of depositing or condensing the precursor on the substrate, the substrate is maintained at a temperature below the precursor source temperature, as described elsewhere in this document.

[0123] In some embodiments, step 413 of curing the precursor includes exposing the substrate to electromagnetic radiation. Suitable examples of electromagnetic radiation include ultraviolet, visible, and infrared light. Alternatively, in some embodiments, step 413 of curing the precursor includes exposing the substrate to a remote plasma. Alternatively, in some embodiments, step 413 of curing the precursor may include generating a direct plasma in a reaction chamber. In some embodiments, the direct plasma is continuously on throughout step 413 of curing the precursor. In some embodiments, the direct plasma is pulsed, i.e., the direct plasma is intermittently turned on and off multiple times.

[0124] According to Figure 4 In an exemplary embodiment of the method, cycloborazane is used as a precursor to form a boron nitride-containing layer. In such an exemplary embodiment, the substrate can be maintained at a temperature of 21°C, the precursor source can be maintained at a temperature of 40°C, the syringe can be maintained at a temperature of 60°C, and the gas line carrying the precursor from the precursor source to the syringe has a gradually increasing temperature from the precursor source to the syringe. Therefore, the cycloborazane can condense on the substrate. The condensed cycloborazane can then be cured using the techniques described herein.

[0125] Figure 5Another embodiment of the method for forming a layer on a substrate as described herein is illustrated. The method employs the system described herein and includes positioning the substrate on a substrate support 511. The method then includes cyclically performing one or more first cycles 518, such as a plurality of first cycles, for example 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000 or more first cycles. The first cycle includes a step 512 of condensing or depositing a first precursor on the substrate and a step 516 of curing the first precursor. Optionally, the step 512 of condensing or depositing the first precursor on the substrate and the step 516 of curing the first precursor can be separated by purging. After the first cycle 518 has been performed, the method includes cyclically performing one or more second cycles 519, such as a plurality of second cycles, for example 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000 or more second cycles. Optionally, the first cycle 518 and the second cycle 519 are separated by purging. The second cycle includes a step 513 of condensing or depositing a second precursor on the substrate and a step 517 of curing the second precursor. Optionally, the step 513 of condensing or depositing the second precursor on the substrate and the step 517 of curing the second precursor can be separated by purging. Optionally, the first cycle 518 and the second cycle 519 can be repeated once or multiple times in a supercycle 515. Optionally, subsequent supercycles 515 are separated by purging. At least during the steps of depositing or condensing the first precursor on the substrate and depositing or condensing the second precursor on the substrate, the substrate is maintained at a temperature below the first precursor source temperature and below the second precursor source temperature, as described elsewhere herein.

[0126] This cyclic deposition process results in the formation of a layer on the substrate. This layer comprises one or more first sublayers and one or more second sublayers. The first sublayer comprises elements contained in a first precursor, and the second sublayer comprises elements contained in a second precursor. It should be understood that the first precursor and the second precursor are different. Therefore, the method described herein can lead to the formation of a superlattice comprising alternating first and second sublayers. Alternatively, mixing between the first and second sublayers can occur during the method described herein or during subsequent processing steps such as annealing.

[0127] In some embodiments, the first precursor comprises a boron precursor as described herein. In some embodiments, the second precursor comprises a silicon precursor as described herein. When the first precursor comprises a boron precursor and the second precursor comprises a silicon precursor, a layer comprising boron and silicon may be suitably formed. When the first precursor comprises boron and nitrogen and the second precursor comprises silicon, a silicon-doped boron nitride layer may be suitably formed.

[0128] In some embodiments, at least one of step 512 of curing the first precursor and step 517 of curing the second precursor includes exposing the substrate to electromagnetic radiation. Suitable examples of electromagnetic radiation include ultraviolet, visible, and infrared light. Alternatively, in some embodiments, at least one of step 512 of curing the first precursor and step 517 of curing the second precursor includes exposing the substrate to a remote plasma. Alternatively, in some embodiments, at least one of step 512 of curing the first precursor and step 517 of curing the second precursor may include generating a direct plasma in a reaction chamber. In some embodiments, the direct plasma is continuously turned on in at least one step of step 512 of curing the first precursor and step 517 of curing the second precursor. In some embodiments, the direct plasma is pulsed, i.e., the direct plasma is intermittently turned on and off multiple times.

[0129] Figure 6 An embodiment of the controller 600 used in the system described herein is shown. The controller includes an airflow control unit 610, a precursor source temperature control unit 620, a gas injection system temperature control unit 630, a substrate support temperature control unit 640, and a curing unit control unit 650. The operation of a suitable controller 600 is described elsewhere herein.

[0130] The exemplary embodiments described herein do not limit the scope of the invention, as these embodiments are merely examples of embodiments of the invention, the scope of which is defined by the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the invention. In fact, various modifications to this disclosure, such as alternative useful combinations of the described elements, will become apparent to those skilled in the art from the description, in addition to those shown and described herein. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

[0131] In this disclosure, where conditions and / or structures are not specified, such conditions and / or structures can be readily provided by those skilled in the art in light of this disclosure as matters of routine experimentation.

Claims

1. A system comprising: - A reaction chamber, the reaction chamber including a substrate support, the substrate support including a substrate cooling unit and a substrate heating unit; - A precursor source for introducing a precursor into the reaction chamber via a gas injection system fluidly connected to the reaction chamber, the precursor source including a precursor source heater; - A gas injection system heater, arranged for heating a gas injection system, wherein the gas injection system includes a spray head injector, and the spray head injector includes a spray head injector heater. - Curing unit; as well as - A controller, the controller comprising: - A precursor source temperature control unit, which is arranged to maintain the precursor source at a predetermined precursor source temperature using the precursor source heater; - A gas injection system temperature control unit, which is arranged to maintain the gas injection system at a predetermined gas injection system temperature, which is higher than the precursor source temperature, using the gas injection system heater. - A spray head injector temperature control unit, which is arranged to maintain the spray head injector at a predetermined spray head injector temperature by means of a spray head injector heater, wherein the temperature of the spray head injector is higher than the temperature of the gas injection system. - A substrate support temperature control unit, which is arranged to maintain the substrate support at a predetermined substrate support temperature, wherein the substrate support temperature is lower than the precursor source temperature.

2. The system according to claim 1, wherein, The curing unit includes: - A lower electrode and an upper electrode, the lower electrode being contained in a substrate support and the upper electrode being contained in a spray head injector; - Arrange an RF power source for generating an RF power waveform, which is electrically connected to one of the lower and upper electrodes.

3. The system according to claim 1, wherein, The curing unit includes one or more of an infrared source, a UV source, a microwave source, and a remote plasma source.

4. The system according to claim 3, wherein, The curing unit includes a remote plasma source, wherein one or more stencils are located between the remote plasma source and the substrate support.

5. The system according to any one of claims 1 to 4, wherein, The controller includes: - An airflow control unit, arranged to control the flow of gas into the gas injection system; and - Curing unit control unit, which is arranged to control the operation of the curing unit.

6. A method for forming a layer on a substrate, the method comprising the steps of: - A system comprising a precursor source containing a precursor, a gas injection system, a reaction chamber containing a substrate support, and a curing unit, wherein the gas injection system includes a spray head injector, and the spray head injector includes a spray head injector heater; - Maintain the precursor source at the precursor source temperature; - Maintain the gas injection system at a temperature higher than the precursor source temperature. - The spray head injector is maintained at a temperature higher than that of the gas injection system by means of a spray head injector heater; - Keep the substrate support at a substrate support temperature that is lower than the precursor source temperature; - Position the substrate on the substrate support; - A precursor is supplied from a precursor source to the reaction chamber via a gas injection system, thereby condensing or depositing the precursor onto a substrate to form a condensed or deposited precursor; and - The precursor, which has been condensed or deposited, is cured by a curing unit.

7. The method according to claim 6, wherein, - The curing unit includes a lower electrode and an upper electrode, the lower electrode being contained in a substrate support and the upper electrode being contained in a spray head injector; and an RF power source arranged for generating an RF power waveform, the RF power source being electrically connected to one of the lower electrode and the upper electrode; Furthermore, the precursor that solidifies, solidifies, or deposits includes the generation of plasma between the upper and lower electrodes.

8. The method according to claim 6 or 7, wherein, The curing unit includes an infrared source, and wherein curing the condensed or deposited precursor includes exposing the precursor to infrared radiation.

9. The method according to claim 6 or 7, wherein, The curing unit includes an ultraviolet radiation source, and wherein curing the condensed or deposited precursor includes exposing the precursor to ultraviolet radiation.

10. The method according to claim 6 or 7, wherein, The solidification unit includes a remote plasma source, and wherein solidifying the condensed or deposited precursor includes exposing the condensed or deposited precursor to one or more stimulated substances.

11. The method according to claim 6 or 7, wherein, The curing unit includes a remote plasma source, wherein one or more stencils are located between the remote plasma source and a substrate support, and wherein curing the condensed or deposited precursor includes exposing the precursor to free radicals.

12. The method according to claim 6 or 7, wherein, The precursor includes a boron precursor, and wherein the solidification, condensation, or deposition of the precursor involves exposing the precursor to the reactants.

13. The method of claim 6 or 7, further comprising performing multiple deposition cycles, each deposition cycle including a precursor pulse and a curing pulse, the precursor pulse including providing a precursor to a reaction chamber, and the curing pulse including curing the condensed or deposited precursor.

14. The method according to claim 6 or 7, wherein, The curing precursor also includes providing reactants to the reaction chamber.

15. A method for forming a layer on a substrate, the method comprising the steps of: - A system comprising a first precursor source containing a first precursor, a second precursor source containing a second precursor, a gas injection system, a reaction chamber containing a substrate support, and a curing unit, wherein the gas injection system comprises a spray head injector; - Maintain the first precursor source at the first precursor source temperature; - Maintain the second precursor source at the second precursor source temperature; - Maintain the gas injection system at a temperature higher than the first precursor source temperature and higher than the second precursor source temperature. - The spray head injector is kept at a temperature higher than that of the gas injection system by means of a spray head injector heater. - The substrate support is maintained at a substrate support temperature that is lower than the first precursor source temperature and lower than the second precursor source temperature. - Position the substrate on the substrate support; - Execute one or more first loops, where the first loop includes: - A first precursor is supplied from a first precursor source to the reaction chamber via a gas injection system, thereby condensing or depositing the first precursor on a substrate to form a condensed or deposited first precursor; - The first precursor, condensed or deposited, is cured by a curing unit; - Execute one or more second loops, the second loops including: - A second precursor is supplied from a second precursor source to the reaction chamber via a gas injection system, thereby condensing or depositing the second precursor on the substrate to form a condensed or deposited second precursor; - The second precursor, which is condensed or deposited, is cured by a curing unit.

16. The method of claim 15, comprising two or more superloops, each superloop comprising executing one or more first loops and executing one or more second loops.

17. The method according to claim 6 or 15, wherein, The system is the system according to any one of claims 1 to 5.

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