Electronic devices

Abstract

An electronic device includes a voltage source, a light emitting unit, and a switching unit. The switching unit is electrically connected to the light emitting unit and the voltage source, and the switching unit includes a semiconductor layer. The semiconductor layer has a channel, and a width / length ratio of the channel is between 4000 and 25000.

Description

Technical Field

[0001] This application relates to an electronic device, and more particularly to an electronic device that can improve drive stability. Background Technology

[0002] Known electronic devices use driving circuits containing numerous circuit elements to drive the light-emitting elements and produce light of varying brightness. However, the use of numerous circuit elements in electronic devices leads to more complex manufacturing processes and lower yield rates, which may reduce the quality of the devices. Therefore, a new driving circuit design is needed to address these issues. Summary of the Invention

[0003] This application provides an electronic device including a voltage source, a light-emitting unit, and a switching unit. The switching unit is electrically connected to the light-emitting unit and the voltage source, and the switching unit includes a semiconductor layer. The semiconductor layer has channels with a width-to-length ratio between 4000 and 25000. Attached Figure Description

[0004] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0005] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present application.

[0006] Figure 2A This is a schematic diagram of the structure of a switching unit according to an embodiment of this application.

[0007] Figure 2B This is a top view of a switching unit according to an embodiment of this application.

[0008] Figure 3 This is a schematic diagram of an electronic device according to another embodiment of this application.

[0009] Explanation of component labels in the diagram:

[0010] 100, 300: Electronic devices

[0011] 110, 310: First voltage source

[0012] 120, 320: Second voltage source

[0013] 130, 330: Light-emitting units

[0014] 140, 340: Switching units

[0015] 150, 350: Drive unit

[0016] 210: Semiconductor layer

[0017] 220: Substrate

[0018] 230: Gate insulating layer

[0019] W: Width

[0020] L: Length

[0021] D: Drain electrode

[0022] S: Source

[0023] G: Gate

[0024] PVDD, PVSS: Reference voltage

[0025] A, B: Nodes Detailed Implementation

[0026] To make the objectives, features, or advantages of this application more apparent and understandable, embodiments are described below in conjunction with the accompanying drawings. For ease of understanding and to maintain the simplicity of the drawings, many of the figures in this application may only depict a portion of the entire device, and specific elements in the figures are not drawn to scale.

[0027] This application specification provides different embodiments to illustrate the technical features of different implementations of this application. The configuration, quantity, and size of the elements in the embodiments are for illustrative purposes only and are not intended to limit this application. Furthermore, if element reference numerals appear repeatedly in the embodiments and accompanying drawings, it is for simplification and does not imply any correlation between different embodiments.

[0028] Furthermore, the use of ordinal numbers such as "first" and "second" in the specification and claims to modify the elements of the claims does not imply or represent any prior ordinal number of the claimed component, nor does it represent the order of one claimed element with another claimed element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a claimed element with a certain name to be clearly distinguished from another claimed element with the same name.

[0029] In this application, features of various embodiments may be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with it.

[0030] The term "comprising" as used throughout the specification and claims is an open-ended term and should therefore be interpreted as "comprising but not limited to".

[0031] Furthermore, the term "connection" here includes any direct and indirect means of connection. Therefore, if the text describes a first device in a circuit as electrically connected to a second device, it means that the first device can be directly connected to the second device. When the first device is directly electrically connected to the second device, the first device and the second device are connected only by a wire, and no other electronic components are connected between the first device and the second device; or the first device can be indirectly connected to the second device through other devices or other means of connection.

[0032] In this application, the thickness, length and width can be measured by using an optical microscope, and the thickness or length can be measured by cross-sectional images from an electron microscope, but are not limited thereto.

[0033] It should be understood that although the terms first, second, etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, and / or part from another element, component, region, layer, and / or part. Therefore, without departing from the teachings of this application, the first element, first component, first region, first layer, or first part discussed below may also be referred to as a second element, second component, second region, second layer, or second part.

[0034] In addition, phrases such as "within the range of the first value and the second value" or "within the range of the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0035] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present application. In one embodiment, the electronic device 100 may include liquid crystal (LC), organic light-emitting diode (OLED), inorganic light-emitting diode (LED), quantum dot (QD), fluorescent material, phosphorescent material, other suitable materials, or combinations of the above materials, but the present application is not limited thereto. Inorganic light-emitting diodes may include, for example, mini light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dot light-emitting diodes (QLEDs / QDLEDs), but the present application is not limited thereto.

[0036] In some embodiments, the electronic device 100 may be a display device, a sensing device, a touch device, a curved device, a titled device, or a free-shape device, and may also be a bendable or flexible titled device, but is not limited thereto.

[0037] It should be noted that the electronic device 100 can be any of the aforementioned arrangements and combinations, but is not limited thereto. Furthermore, the electronic device 100 can be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device 100 may include peripheral systems such as a drive system, a control system, a light source system, and a shelving system to support the display device.

[0038] In one embodiment, the electronic device 100 may be a display device or a backlight module, but this application is not limited thereto. Please refer to Figure 1 The electronic device 100 may include a first voltage source 110, a second voltage source 120, a light-emitting unit 130, and a switching unit 140.

[0039] The first voltage source 110 can provide a reference voltage PVDD, which may be, for example, the system voltage, but this application is not limited thereto. The second voltage source 120 can provide a reference voltage PVSS, which may be, for example, the ground voltage, but this application is not limited thereto.

[0040] The light-emitting unit 130 can be electrically connected to the first voltage source 110 (e.g., reference voltage PVDD). Furthermore, the first terminal of the light-emitting unit 130 can be directly electrically connected to the first voltage source 110 (e.g., reference voltage PVDD). In this embodiment, the light-emitting unit 130 can be an organic light-emitting diode (OLED) or an inorganic light-emitting diode (LED). Inorganic LEDs can include, for example, sub-millimeter LEDs, micro LEDs, quantum dot LEDs, or combinations thereof. In this case, the first terminal of the light-emitting unit 130 can be an anode, and the second terminal can be a cathode, but this application is not limited to these.

[0041] The switching unit 140 can be electrically connected to the light-emitting unit 130 and the second voltage source 120 (e.g., reference voltage PVSS). In this embodiment, the switching unit 140 can be a thin-film transistor (TFT), but this application is not limited thereto. Furthermore, the switching unit 140 can have a first terminal, a second terminal, and a third terminal, wherein the first terminal is, for example, a gate (G), the second terminal is, for example, a drain (D), and the third terminal is, for example, a source (S). Figure 2A or Figure 2B As shown. Please refer to. Figure 1 The switching unit 140 can be an N-type thin-film transistor, and its gate G can be electrically connected to the driving unit 150 to receive control signals. The drain D of the switching unit 140 can be electrically connected to the second terminal of the light-emitting unit 130. When the light-emitting unit 130 is a light-emitting diode, the drain D of the switching unit 140 is electrically connected to the cathode of the light-emitting unit 130. The source S of the switching unit 140 can be electrically connected to a second voltage source 120 (e.g., a reference voltage PVSS), but this application is not limited thereto.

[0042] The driving unit 150 can be a pulse width modulation controller (PWM controller), and the control signal can be a pulse width modulation (PWM) signal, but this application is not limited to this.

[0043] Please refer to Figure 2A or Figure 2B , Figure 2A It could be a 3D view of the switching unit 140 as a bottom gate structure, and Figure 2B The switch unit 140 shown is a top view of the top gate structure. The switch unit 140 may include a semiconductor layer 210, which may include amorphous silicon (a-Si), polycrystalline silicon (p-Si), single-crystalline silicon, metal oxide semiconductor, or other suitable materials or combinations thereof; this application is not limited to these. Please refer to... Figure 2AThe region of semiconductor layer 210 that overlaps with gate G and is located between source S and drain D can be defined as a channel, and the channel has a length L and a width W. In this embodiment, the length L can be the minimum distance between any point in drain D and source S, while the width W can be the length of the corresponding drain D profile in the channel (e.g., ...). Figure 2A (as shown in the middle W), and the length L will be less than the width W. Furthermore, as... Figure 2A As shown, the switching unit 140 may further include a substrate 220 and a gate insulating layer 230, and the arrangement of the gate G, drain D, source S, semiconductor layer 210, substrate 220 and gate insulating layer 230 of the switching unit 140 can be referenced. Figure 2A As shown, it will not be described again here. In one embodiment, as... Figure 2B As shown, the region where the semiconductor layer 210 overlaps with the gate G can be defined as a channel. The channel has a length L and a width W. For example, when the channel is rectangular, its shorter side is the length L and its longer side is the width W, but this application is not limited to this. Figure 2A and Figure 2B The structure of the switch unit shown is an embodiment of this application, used to show the length and width of the channel included in the semiconductor layer of the switch unit, but not to limit the structure of the switch unit of this application.

[0044] In some embodiments, the width W of the channel can be between 20,000 micrometers (μm) and 100,000 micrometers, but this application is not limited thereto. That is, the width W of the channel can be 20,000 micrometers, 30,000 micrometers, 40,000 micrometers, 50,000 micrometers, 60,000 micrometers, 70,000 micrometers, 80,000 micrometers, 90,000 micrometers, or 100,000 micrometers, but this application is not limited thereto. In some embodiments, the length L of the channel can be 4.5 micrometers, then the width / length ratio (W / L) of the channel can be between 4,000 and 25,000, but this application is not limited thereto.

[0045] Furthermore, in some embodiments, the width W of the aforementioned channel may also be between 30,000 micrometers and 90,000 micrometers, but this application is not limited to this. That is, the width W of the aforementioned channel may be 30,000 micrometers, 40,000 micrometers, 50,000 micrometers, 60,000 micrometers, 70,000 micrometers, 80,000 micrometers, or 90,000 micrometers, but this application is not limited to this. In some embodiments, the length L of the aforementioned channel may be 4.5 micrometers, then the width / length ratio (W / L) of the aforementioned channel may be between 6,500 and 22,000.

[0046] Next, if the channel width L of the switching unit 140 is 4.5 micrometers, without changing the reference voltage PVDD of the first voltage source 110, the reference voltage PVSS of the second voltage source 120, and the control signal of the driving unit 150, the channel width W of the switching unit 140 is adjusted to perform a simulation test of driving the light-emitting unit 130 of the electronic device 100. For example, the channel width W of the switching unit 140 can be set to 1000 micrometers, and a simulation test of driving the light-emitting unit 130 of the electronic device 100 can begin. Then, the channel width W of the switching unit 140 can be gradually increased from 1000 micrometers to 10000 micrometers in increments of 1000 micrometers to perform a simulation test of driving the light-emitting unit 130 of the electronic device 100.

[0047] In this way, the stability of the analog switching unit 140 driving the light-emitting unit 130 is improved. When the channel width W of the switching unit 140 is between 20,000 micrometers and 100,000 micrometers, the width / length ratio (W / L) can be between 4,000 and 25,000, allowing the current passing through the switching unit 140 to be more stable or with smaller current variations. Therefore, the brightness of the light-emitting unit 130 is more stable, thus improving the driving stability of the light-emitting unit 130. Furthermore, when the channel width W of the switching unit 140 is between 30,000 micrometers and 90,000 micrometers, the width / length ratio (W / L) can be between 6,500 and 22,000, further improving the driving stability of the light-emitting unit 130. Moreover, by adjusting the channel width W and / or length L of the switching unit 140, the control signal generated by the driving unit 150 can be further adjusted. For example, when the control signal is a pulse width modulation signal, the timing of the pulse width modulation signal can be adjusted, thereby modulating the brightness of the light-emitting unit 130.

[0048] In some embodiments, the switching unit 140 can operate in the linear region by setting equations (1) and (2). Equations (1) and (2) are shown below:

[0049] V BS =V PVDD -V led (1)

[0050] V BS <|V AS -V th | (2)

[0051] Among them, V BS V represents the voltage difference between node B (e.g., the drain D of switching unit 140) and the second voltage source 120 (e.g., reference voltage PVSS). PVDD This represents the voltage of the first voltage source 110 (e.g., reference voltage PVDD), Vled V represents the voltage difference (e.g., the voltage of the light-emitting unit 130) between the first voltage source 110 (e.g., the reference voltage PVDD) and node B (e.g., the drain D of the switching unit 140). AS V represents the voltage difference between node A (e.g., the gate G of switching unit 140) and the second voltage source 120 (e.g., the reference voltage PVSS). th This indicates the critical voltage of the switching unit 140.

[0052] Next, consider the transconductance and conduction current of the switching unit 140, as shown in equations (3) and (4) respectively:

[0053] g m = (W / L)μC ox V BS (3)

[0054] I led =V BS / R on = (W / L)μC ox V BS (V AS -V th (4)

[0055] Among them, g m The transconductance of switching unit 140 is represented by W, the width of switching unit 140 is represented by L, the length of switching unit 140 is represented by μ, and the electron mobility is represented by C. ox R represents the capacitance per unit gate area of ​​the oxide layer. on I represents the on-resistance of the switching unit 140. led This is the conduction current of the switching unit 140 (e.g., the current flowing through the light-emitting unit 130).

[0056] Then, using equations (3) and (4), equation (5) can be calculated, as shown below:

[0057] g m (V AS -V th ) = V BS \R on (5)

[0058] Next, using equation (5), equation (6) can be calculated, as shown below:

[0059] R on g m =V BS / (V AS -V th )=N (6)

[0060] wherein N represents a proportional setting value. In some embodiments, N may be set to be greater than 0.03 and less than 0.5, that is 0.03<N<0.5, but the present application is not limited thereto.

[0061] Next, formulas (1) to (6) can be used to perform a driving simulation test on the light-emitting unit 130 of the electronic device 100, and the voltage V of node B can be measured BS and the on-current I of the switch unit 140 led (for example, the current flowing through the light-emitting unit 130). Thereafter, after obtaining the voltage V BS and the on-current I led , the on-resistance R of the switch unit 140 can be calculated by formula (4) on . Next, after calculating the on-resistance R of the switch unit 140 on , the width / length ratio (W / L) of the channel of the switch unit 140 corresponding to the proportional setting value N can be calculated through formula (3) and formula (6), so as to find a suitable size of the switch unit 140 (for example, the width W and length L of the channel of the switch unit 140).

[0062] In this way, the driving stability of the light-emitting unit 130 of the electronic device 100 by the switch unit 140 can be simulated, and a suitable size of the switch unit 140 (i.e., the width W and length L of the switch unit 140) can be determined according to the width / length ratio (W / L) corresponding to the range of the proportional setting value N (for example, 0.03<N<0.5), so as to improve the driving stability of the light-emitting unit 130. In addition, adjusting the width W and / or length L of the channel of the switch unit 140 can further adjust the control signal generated by the driving unit 150. For example, when the control signal is a pulse width modulation signal, the time of the pulse width modulation signal can be adjusted, so that the brightness of the light-emitting unit 130 can be modulated.

[0063] Figure 3 is a schematic diagram of an electronic device according to another embodiment of the present application. In one embodiment, the type, shape, and arrangement combination of the electronic device 300 can be as described for the electronic device 100, and will not be repeated herein.

[0064] The electronic device 300 can have peripheral systems such as a driving system, a control system, a light source system, and a shelf system to support the display device.

[0065] In one embodiment, the electronic device 300 can be a display device or a backlight module, but the present application is not limited thereto. Refer to Figure 3 , the electronic device 300 may include a first voltage source 310, a second voltage source 320, a light-emitting unit 330 and a switch unit 340.

[0066] The first voltage source 310 can provide a reference voltage PVDD, which may be, for example, the system voltage, but this application is not limited thereto. The second voltage source 320 can provide a reference voltage PVSS, which may be, for example, the ground voltage, but this application is not limited thereto.

[0067] The light-emitting unit 330 can be electrically connected to the second voltage source 320 (e.g., reference voltage PVSS). Furthermore, the second terminal of the light-emitting unit 330 can be directly electrically connected to the second voltage source 320 (e.g., reference voltage PVSS). In this embodiment, the light-emitting unit 330 can be as described above, and will not be repeated here. In this case, the first terminal of the light-emitting unit 330 can be the anode, and the second terminal can be the cathode, but this application is not limited to this.

[0068] Please refer to Figure 3 The switching unit 340 can be electrically connected to the light-emitting unit 330 and the first voltage source 310 (e.g., reference voltage PVDD). In this embodiment, the switching unit 340 can be a thin-film transistor, but this application is not limited thereto. Further, the switching unit 340 can be a P-type thin-film transistor, and the switching unit 340 can have a first terminal, a second terminal, and a third terminal, wherein the first terminal is, for example, a gate G, the second terminal is, for example, a drain D, and the third terminal is, for example, a source S, but this application is not limited thereto. The gate G of the switching unit 340 can be electrically connected to the driving unit 350 to receive control signals. The drain D of the switching unit 340 can be electrically connected to the first terminal of the light-emitting unit 330. The source S of the switching unit 340 can be electrically connected to the first voltage source 310 (e.g., reference voltage PVDD), but this application is not limited thereto.

[0069] As previously mentioned, the drive unit 350 can be a pulse width modulation controller, and the control signal can be a pulse width modulation signal, which will not be repeated here.

[0070] Additionally, the switching unit 340 may include a semiconductor layer 210, wherein the semiconductor layer 210 may include a channel having a length L and a width W, such as... Figure 2A or Figure 2B As shown. In some embodiments, the width W of the channel can be between 20,000 micrometers and 100,000 micrometers, but this application is not limited thereto. In some embodiments, the length L of the channel can be 4.5 micrometers, then the width / length ratio (W / L) of the channel can be between 4,000 and 25,000, but this application is not limited thereto.

[0071] Furthermore, in some embodiments, the width W of the channel can be between 30,000 micrometers and 90,000 micrometers, but this application is not limited thereto. In some embodiments, the length L of the channel can be 4.5 micrometers, then the width / length ratio (W / L) of the channel can be between 6,500 and 22,000.

[0072] Next, if the channel width L of the switching unit 340 is 4.5 micrometers, without changing the reference voltage PVDD of the first voltage source 310, the reference voltage PVSS of the second voltage source 320, or the control signal of the driving unit 350, the channel width W of the switching unit 340 is adjusted to perform a simulation test of driving the light-emitting unit 330 of the electronic device 300. For example, the channel width W of the switching unit 340 can be set to 1000 micrometers, and a simulation test of driving the light-emitting unit 330 of the electronic device 300 can begin. Then, the channel width W of the switching unit 340 can be gradually increased from 1000 micrometers to 10000 micrometers in increments of 1000 micrometers to perform a simulation test of driving the light-emitting unit 330 of the electronic device 300.

[0073] In this way, the stability of the switching unit 340 driving the light-emitting unit 330 of the electronic device 300 can be simulated. When the channel width W of the switching unit 340 is between 20,000 micrometers and 100,000 micrometers, the width / length ratio (W / L) can be between 4,000 and 25,000, which can improve the driving stability of the light-emitting unit 330. Furthermore, when the channel width W of the switching unit 340 is between 30,000 micrometers and 90,000 micrometers, the width / length ratio (W / L) can be between 6,500 and 22,000, which can also improve the driving stability of the light-emitting unit 330. In addition, by adjusting the channel width W and / or length L of the switching unit 340, the control signal generated by the driving unit 350 can be further adjusted. For example, when the control signal is a pulse width modulation signal, the timing of the pulse width modulation signal can be adjusted, thereby modulating the brightness of the light-emitting unit 330.

[0074] Additionally, in some embodiments, the switching unit 340 can operate in the linear region by setting equations (7) and (8). Equations (1) and (2) are shown below:

[0075] V BS =V PVDD -|V tft | (7)

[0076] V BS <|V AS -V th | (8)

[0077] Among them, VBS This represents the voltage difference (e.g., the voltage of the light-emitting unit 330) between node B (e.g., the drain D of switching unit 340) and the second voltage source 320 (e.g., the reference voltage PVSS). PVDD This represents the voltage of the first voltage source 310 (e.g., reference voltage PVDD), V tft This represents the voltage difference (e.g., the voltage of switching unit 340) between the first voltage source 310 (e.g., reference voltage PVDD) and node B (e.g., the drain D of switching unit 340). AS V represents the voltage difference between node A (e.g., the gate G of switching unit 340) and the first voltage source 310 (e.g., the reference voltage PVDD). th This indicates the critical voltage of the switching unit 340.

[0078] Next, consider the mutual conduction and conduction current of the switching unit 340, as shown in equations (9) and (10) respectively:

[0079] g m = (W / L)μC ox V BS (9)

[0080] I led =V BS / R on = (W / L)μC ox V BS |(V AS -V th (10)

[0081] Among them, g m The transconductance of switching unit 340 is represented by W, the width of switching unit 340 is represented by L, the length of switching unit 340 is represented by μ, and the electron mobility is represented by C. ox R represents the capacitance per unit gate area of ​​the oxide layer. on I represents the on-resistance of the switching unit 340. led This is the conduction current of the switching unit 340 (e.g., the current flowing through the light-emitting unit 330).

[0082] Then, using equations (9) and (10), equation (11) can be calculated, as shown below:

[0083] g m =(|V AS -V th |)=V BS \R on (11)

[0084] Next, using equation (11), equation (12) can be calculated, as shown below:

[0085] R on g m =V BS / (|V AS -V th |)=N (12)

[0086] Wherein, N represents a proportional setting value. In some embodiments, N can be set to be greater than 0.03 and less than 0.5, that is, 0.03<N<0.5, but the present application is not limited thereto.

[0087] Next, a simulation test is performed on the electronic device 300 to measure the voltage V at node B BS and the on-current I of the switch unit 340 led (for example, the current flowing through the light emitting unit 330). Thereafter, after obtaining the voltage V BS and the on-current I led , the on-resistance R of the switch unit 340 can be calculated through formula (10) on . Next, after calculating the on-resistance R of the switch unit 340 on , the width-to-length ratio (W / L) of the channel of the switch unit 340 can be derived through formula (9) and formula (12), so as to find suitable width W and length L of the channel of the switch unit 340.

[0088] In this way, the influence of the switch unit 340 on the stability of the electronic device 300 can be simulated, and a suitable size of the switch unit 340 (that is, the width W and length L of the switch unit 340) can be determined according to the width-to-length ratio (W / L) corresponding to the range of the proportional setting value N (for example, 0.03<N<0.5), so as to improve the driving stability of the light emitting unit 330. In addition, adjusting the width W and / or length L of the channel of the switch unit 340 can further adjust the control signal generated by the driving unit 350. For example, when the control signal is a pulse width modulation signal, the duration of the pulse width modulation signal can be adjusted, so that the brightness of the light emitting unit 330 can be modulated.

[0089] In summary, in the electronic device according to the embodiments of the present application, the switch unit is electrically connected between the light emitting unit and the voltage source, and the width-to-length ratio of the channel of the semiconductor layer of the switch unit is set to between 4000 and 25000. In this way, the use of circuit elements can be reduced, the manufacturing process can be simplified, the manufacturing yield can be improved, or the driving stability of the light emitting unit can be effectively achieved.

[0090] Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the definition of the claims.

Claims

1. An electronic device, characterized in that, include: A voltage source; One light-emitting unit; as well as A switching unit is electrically connected to the light-emitting unit and the voltage source, and the switching unit includes a semiconductor layer; The semiconductor layer has a channel with a width-to-length ratio between 4000 and 25000. The product of the on-resistance and the cross-conductance of the switching unit is a proportional setting value, which is greater than 0.03 and less than 0.

5.

2. The electronic device as claimed in claim 1, characterized in that, The width-to-length ratio is between 6500 and 22000.

3. The electronic device as claimed in claim 1, characterized in that, The switching unit has a gate and receives a pulse width modulation signal.

4. The electronic device as claimed in claim 3, characterized in that, The electronic device also includes: A driving unit is electrically connected to the gate of the switching unit and provides the pulse width modulation signal.

5. The electronic device as claimed in claim 1, characterized in that, This voltage source is a system voltage.

6. The electronic device as claimed in claim 5, characterized in that, The switching unit is directly electrically connected to the system voltage.

7. The electronic device as claimed in claim 6, characterized in that, The switching unit is a P-type thin-film transistor.

8. The electronic device as claimed in claim 1, characterized in that, The voltage source is a ground voltage.

9. The electronic device as claimed in claim 8, characterized in that, The switching unit is directly electrically connected to the ground voltage.

10. The electronic device as claimed in claim 9, characterized in that, The switching unit is an N-type thin-film transistor.

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